WO2015154661A1 - 一种圆环杆与平板连杆的二维正方晶格光子晶体 - Google Patents

一种圆环杆与平板连杆的二维正方晶格光子晶体 Download PDF

Info

Publication number
WO2015154661A1
WO2015154661A1 PCT/CN2015/076043 CN2015076043W WO2015154661A1 WO 2015154661 A1 WO2015154661 A1 WO 2015154661A1 CN 2015076043 W CN2015076043 W CN 2015076043W WO 2015154661 A1 WO2015154661 A1 WO 2015154661A1
Authority
WO
WIPO (PCT)
Prior art keywords
photonic crystal
rod
refractive index
square lattice
flat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2015/076043
Other languages
English (en)
French (fr)
Inventor
欧阳征标
王晶晶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen University
Original Assignee
Shenzhen University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen University filed Critical Shenzhen University
Publication of WO2015154661A1 publication Critical patent/WO2015154661A1/zh
Priority to US15/253,765 priority Critical patent/US10473819B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials

Definitions

  • the invention relates to a wide absolute forbidden band two-dimensional photonic crystal.
  • a photonic crystal is a material structure in which dielectric materials are periodically arranged in space, and is usually composed of two or more kinds of artificial crystals having materials having different dielectric constants.
  • the frequency interval in which the electromagnetic field state density is zero is defined as the TE or TM complete band gap of the photonic crystal, and the frequency interval in which TE and TM are completely forbidden band is called photonic crystal.
  • Absolute forbidden band Designing a photonic crystal with a complete forbidden band or absolute forbidden band, which can simply and effectively regulate the macroscopic electromagnetic properties of the medium, including selecting the frequency band, mode mode and transmission path in which the electromagnetic wave is propagated, and controlling the absorption or radiation characteristics of the medium therein. The basis for controlling photon motion and making various photonic devices.
  • the wider the photonic band gap the better the performance of the device.
  • the wider the photonic band gap the wider the operating band of the photonic crystal waveguide, the smaller the transmission loss, the photonic crystal resonator and the laser.
  • the higher the quality factor the better the photonic crystal has a better restraining effect on spontaneous emission, and the higher the reflectivity of the photonic crystal mirror.
  • a photonic crystal with a complete forbidden band and an absolute forbidden band has a photonic band gap for light in different propagation directions.
  • a non-square lattice structure such as a triangular lattice or a hexagonal lattice is used to obtain a large relative forbidden band, but in the photonic crystal integrated optical path, it is not easy to provide the integration of the optical path, and the tetragonal in the prior art.
  • the absolute forbidden band width of the lattice photonic crystal is small.
  • the two-dimensional square lattice photonic crystal of the toroidal rod and the flat rod link of the present invention comprises a high refractive index dielectric column and a low refractive index background dielectric column; the photonic crystal structure is formed by arranging the cells in a square lattice;
  • the high refractive index dielectric column is composed of a flat dielectric column and a circular dielectric column; the flat dielectric column has a width D of 0.01a to 0.2a, and the annular column has an outer diameter R of 0.1a to 0.5. a, the ratio of the difference between the inner and outer diameters of the annular column and the outer diameter of the ring is 0.01 to 0.99.
  • the distance from the leftmost end of the left flat connecting rod of the cell to the rightmost end of the right flat connecting rod is a; the distance from the bottommost end of the lower flat connecting rod of the cell to the topmost end of the upper flat connecting rod is a .
  • the high refractive index medium is silicon, gallium arsenide, titanium dioxide or a high refractive index medium having a refractive index greater than 2;
  • the high refractive index medium is silicon and has a refractive index of 3.4.
  • the low refractive index background medium is air, magnesium fluoride, silicon dioxide or a low refractive index medium.
  • the low refractive index background medium is air.
  • the absolute forbidden band relative value of the photonic crystal structure is greater than 5%.
  • the absolute forbidden band relative value of the photonic crystal structure is greater than 10%.
  • the absolute forbidden band relative value of the photonic crystal structure is greater than 15%.
  • the two-dimensional square lattice photonic crystal of the toroidal rod and the flat rod connecting rod of the invention can be widely used in large-scale integrated optical path design. Compared with the prior art, it has the following positive effects.
  • the maximum absolute forbidden band relative value and its corresponding parameters usually the ratio of the absolute forbidden band width to the forbidden band center frequency is taken as the inspection index of the forbidden band width, which is called The relative value of the absolute forbidden band width.
  • the photonic crystal structure has a very large absolute band gap, which can bring greater convenience and flexibility to the design and manufacture of photonic crystal devices.
  • the optical path is easy to connect and couple between different optical components and between different optical paths.
  • the square lattice structure can make the optical path simple and easy to provide integration of the optical path.
  • FIG. 1 is a schematic view showing the structure of a two-dimensional square lattice photonic crystal of a toroidal rod and a flat rod link of the present invention.
  • Fig. 2 is a graph showing the effect of the ratio T of the difference between the inner and outer diameters of the annular column of the present invention and the outer diameter of the annular ring on the absolute value of the absolute forbidden band.
  • Figure 3 is an energy band diagram of the photon crystal structure of the present invention corresponding to the maximum relative absolute band gap value.
  • Fig. 4 is a structural diagram showing parameters corresponding to the maximum absolute forbidden band relative value of the photonic crystal of the present invention.
  • the two-dimensional square lattice photonic crystal of the toroidal rod and the flat rod link of the present invention comprises a high refractive index dielectric column and a low refractive index background dielectric column, as shown in FIG. 1 is a cell of a photonic crystal, the photon
  • the crystal structure is formed by arranging the cells in a square lattice.
  • the characteristic parameters of the cell structure are three: the width D of the flat dielectric column, the outer diameter R of the circular column, the ratio of the difference between the inner and outer diameters of the circular column and the outer diameter of the annular ring; the square lattice photonic crystal
  • the lattice constant is a; the distance from the leftmost end of the left flat connecting rod of the cell to the rightmost end of the right flat connecting rod is a; the bottom end of the lower flat connecting rod of the cell is connected to the upper flat connecting rod
  • the topmost distance is a;
  • the high refractive index dielectric column is composed of a flat dielectric column and a circular dielectric column;
  • the high refractive index medium is silicon (Si), and the low refractive index background medium is air.
  • the maximum absolute forbidden band relative value can be obtained.
  • the width D of the flat dielectric column is (0.01a ⁇ 0.2a)
  • the outer diameter R of the circular column is (0.1a ⁇ 0.5a)
  • the inner and outer diameter of the circular column The ratio of the difference to the outer diameter of the ring is T (0.01 to 0.99).
  • the width D of the flat dielectric column is 0.048a
  • the outer diameter R of the circular column is 0.3a.
  • the fixed D is 0.048a and the T is 0.8415.
  • the fixed R is 0.296a and the T is 0.8415.
  • the energy band diagram is shown in Figure 3.
  • the photonic crystal structure under the final structural parameters is shown in Figure 4.
  • High refractive index medium is silicon
  • low refractive index medium is air
  • a 0.6975
  • ring column The inner diameter is 0.033 micron
  • the absolute forbidden band range of the photonic crystal is (1.69025 ⁇ 1.39659), and the absolute value of the absolute forbidden band is 19.026%.
  • High refractive index medium is silicon
  • low refractive index medium is air
  • a 0.765
  • ring column The inner diameter is 0.037 micron
  • the absolute forbidden band range of the photonic crystal is (1.85383 to 1.53175), and the absolute forbidden band corresponds to 19.026%.
  • the high refractive index medium is silicon
  • the low refractive index medium is air
  • a 0.585
  • the ring column The inner diameter is 0.028 ⁇ m
  • the absolute forbidden band range of the photonic crystal is (1.41763 ⁇ 1.17134), and the absolute value of the absolute forbidden band is 19.026%.
  • High refractive index medium is silicon
  • low refractive index medium is air
  • a 0.585
  • circular column The inner diameter is 0.119 micrometers
  • the absolute forbidden band range of the photonic crystal is (1.37218 ⁇ 1.30510), and the absolute value of the absolute forbidden band is 5.011%.
  • High refractive index medium is silicon
  • low refractive index medium is air
  • a 0.585
  • ring column The inner diameter is 0.061 micron
  • the absolute forbidden band range of the photonic crystal is (1.26582 ⁇ 1.16764), and the relative value of the absolute forbidden band is 8.066%.
  • the absolute forbidden band of the photonic crystal is (1.23246 ⁇ 1.11487), absolutely forbidden. The relative value of the band corresponds to 10.016%.
  • High refractive index medium is silicon
  • low refractive index medium is air
  • a 0.45
  • ring column The inner diameter is 0.054 ⁇ m
  • the absolute forbidden band range of the photonic crystal is (0.97308 ⁇ 0.85701)
  • the relative value of the absolute forbidden band is 12.087%.
  • High refractive index medium is silicon
  • low refractive index medium is air
  • a 0.425
  • ring column The inner diameter is 0.034 micron
  • the absolute forbidden band range of the photonic crystal is (0.93079 ⁇ 0.79715), and the relative value of the absolute forbidden band is 15.468%.
  • High refractive index medium is silicon
  • low refractive index medium is air
  • a 0.385
  • circular column The inner diameter is 0.035 micron
  • the absolute forbidden band range of the photonic crystal is (0.92702 ⁇ 0.77334), and the relative value of the absolute forbidden band corresponds to 18.079%.

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

一种圆环杆与平板连杆的二维正方晶格光子晶体，包括高折射率介质柱和低折射率背景介质柱。光子晶体结构由元胞按正方晶格排列而成，高折射率介质柱由平板介质柱与圆环介质柱连接构成。元胞的左平板连接杆最左端到右平板连接杆最右端距离为a，元胞的下平板连接杆的最底端到上平板连接杆的最顶端的距离为a。平板介质柱的宽度D为0.01a～0.2a，圆环柱的外径R为0.1a～0.5a，圆环柱的内外径之差与圆环外径的比值T为0.01～0.99。这种结构使光路简洁，易于提供光路集成度，具有非常大的绝对禁带，为光子晶体的设计和制造带来了更大的方便性和灵活性。

Description

一种圆环杆与平板连杆的二维正方晶格光子晶体 技术领域
本发明涉及宽绝对禁带二维光子晶体。
背景技术
1987年，美国Bell实验室的E.Yablonovitch在讨论如何抑制自发辐射和Princeton大学的S.John在讨论光子区域各自独立地提出了光子晶体(Photonic Crystal)的概念。光子晶体是一种介电材料在空间中呈周期性排列的物质结构，通常由两种或两种以上具有不同介电常数材料构成的人工晶体。
在频域，对任意方向传播的TE或TM波，电磁场态密度为零的频率区间定义为光子晶体的TE或TM完全禁带，同时为TE和TM完全禁带的频率区间被称为光子晶体的绝对禁带。设计具有完全禁带或绝对禁带的光子晶体，能够简单而有效地调控介质的宏观电磁特性，包括选择其中传播电磁波的频带、模模式和传输路径，控制其中介质的吸收或辐射等特性，是控制光子运动、制作各种光子器件的基础。
对于各种光子晶体器件而言，光子禁带越宽，器件的性能越好，例如，光子禁带越宽，则光子晶体波导的工作频带越宽、传输损耗越小，光子晶体谐振腔和激光器的品质因子越高，光子晶体对自发辐射的约束效果越好，光子晶体反射镜的反射率越高等。具有完全禁带和绝对禁带的光子晶体因对不同传播方向上的光都存在光子带隙。
现有技术中采用三角晶格、六角晶格等非正方晶格结构以获得大的相对禁带，但是在光子晶体集成光路中，不易于提供光路的集成度，而现有技术中的正方晶格光子晶体的绝对禁带宽度很小。
发明内容
本发明的目的是克服现有技术中的不足之处，提供一种易于光路集成，且具有非常大的绝对禁带宽度相对值的二维正方晶格光子晶体。
本发明的目的是通过下述技术方案予以实现。
本发明的圆环杆与平板连杆的二维正方晶格光子晶体包括高折射率介质柱和低折射率背景介质柱；所述的光子晶体结构由元胞按正方晶格排列而成；所述的高折射率介质柱由平板介质柱与圆环介质柱连接构成；所述的平板介质柱的宽度D为0.01a～0.2a，所述的圆环柱的外径R为0.1a～0.5a，所述的圆环柱的内外径之差与圆环外径的比值T为0.01～0.99。
所述元胞的左平板连接杆的最左端到右平板连接杆的最右端的距离为a；所述元胞的下平板连接杆的最底端到上平板连接杆的最顶端的距离为a。
所述的高折射率介质为硅、砷化镓、二氧化钛或者折射率大于2的高折射率介质；
所述的高折射率介质为硅，其折射率为3.4。
所述的低折射率背景介质为空气、氟化镁、二氧化硅或者低折射率介质。
所述的低折射率背景介质为空气。
设置0.029a≤D≤0.124a，0.26a≤R≤0.38a，0.206≤T≤0.99，所述光子晶体结构的绝对禁带相对值大于5％。
设置0.029a≤D≤0.086a，0.26a≤R≤0.38a，0.304≤T≤0.99，所述光子晶体结构的绝对禁带相对值大于10％。
设置0.0385a≤D≤0.05275a，0.28a≤R≤0.34a，0.4755≤T≤0.99，所述光子晶体结构的绝对禁带相对值大于15％。
设置D为0.049a，R为0.296a，T为0.838，绝对禁带宽度相对值为19.026％。
本发明的圆环杆与平板连杆的二维正方晶格光子晶体，可广泛应用于大规模集成光路设计中。它与现有技术相比，有如下积极效果。
(1)利用平面波展开法进行大量的精细研究得到，最大的绝对禁带相对值和其对应的参数；通常将绝对禁带宽度与禁带中心频率的比值作为禁带宽度的考察指标，称之为绝对禁带宽度相对值。
(2)本光子晶体结构具有非常大的绝对禁带，可以为光子晶体器件的设计和制造带来更大的方便和灵活性。
(3)光子晶体集成光路中，光路中不同光学元件之间以及不同光路之间易于连接和耦合，采用正方晶格结构可以使光路简洁，且易于提供光路的集成度。
(4)设计简洁，易于制作，降低了制作成本。
附图说明
图1是本发明的圆环杆与平板连杆的二维正方晶格光子晶体的结构示意图。
图2是本发明圆环柱的内外径之差与圆环外径的比值T对于绝对禁带相对值的影响图。
图3是本发明的光子晶体结构对应最大的绝对禁带宽度相对值的能带图。
图4为对应本发明光子晶体最大绝对禁带相对值的参数的结构图。
具体实施方式
下面结合附图对本发明的实施方式进行详细描述。
本发明的圆环杆与平板连杆的二维正方晶格光子晶体包括高折射率介质柱和低折射率背景介质柱，如图1所示的为光子晶体的一个元胞，所述的光子晶体结构由所述元胞按正方晶格排列而成。所述元胞结构的特征参数有三个：平板介质柱的宽度D，圆环柱的外径R，圆环柱的内外径之差与圆环外径的比值T；所述正方晶格光子晶体的晶格常数为a；所述元胞的左平板连接杆的最左端到右平板连接杆的最右端的距离为a；所述元胞的下平板连接杆的最底端到上平板连接杆的最顶端的距离为a；所述的高折射率介质柱由平板介质柱与圆环介质柱连接构成；所述的高折射率介质采用硅(Si)，所述的低折射率背景介质为空气。
通过最速下降法对所述光子晶体结构进行优化搜索研究，能获得最大绝对禁带相对值。
(1)确定三个参数的初扫描范围：平板介质柱的宽度D为(0.01a～0.2a)，圆环柱的外径R为(0.1a～0.5a)，圆环柱的内外径之差与圆环外径的比值T(0.01～0.99)。
(2)基于平面波展开法做初扫描，得到比较好的参数：平板介质柱的宽度D为0.048a，圆环柱的外径R为0.3a。
(3)固定D为0.048a，R为0.3a，基于平面波展开法对T进行扫描，得到图2所示的结果。图2中T的值在0.267～0.99的范围内都有完全禁带，且在T等于0.8415处有最大绝对禁带相对值，gapratio1＝18.276％。
(4)固定D为0.048a，T为0.8415，基于平面波展开法对R进行扫描，得到最佳绝对禁带相对值gapratio2＝18.649％，对应的R值为0.296a。
(5)固定R为0.296a，T为0.8415，基于平面波展开法对D进行扫描，得到最佳绝对禁带相对值gapratio2＝18.998％，对应的D值为0.048776a。
(6)判断|(gapratio2-gapratio1)/(gapratio2+gapratio1)|是否小于1％，否则以上述各步的结果，对各参数进行新一轮扫描，直到|(gapratio2-gapratio1)/(gapratio2+gapratio1)|<1％才结束搜索，最终获得最优化的绝对禁带相对值及其所对应的结构参数。
最终得到的优化结果为：D＝0.049a，R＝0.296a，T＝0.838时，最大绝对禁带的相对值＝19.026％。其能带图如图3所示，最终结构参数下的光子晶体结构如图4所示。
根据以上结果给出如下9个实施例：
实施例1.高折射率介质采用硅，低折射率介质为空气，a＝0.6975,平板介质柱宽度D＝0.049a＝0.034微米，圆环柱外径R＝0.296a＝0.206微米，圆环柱内径为0.033微米，得到光子晶体的绝对禁带范围为(1.69025～1.39659)，绝对禁带的相对值对应为19.026％。
实施例2.高折射率介质采用硅，低折射率介质为空气，a＝0.765，平板介质柱宽度D＝0.049a＝0.037微米，圆环柱外径R＝0.296a＝0.226微米，圆环柱内径为0.037微米，得到光子晶体的绝对禁带范围为(1.85383～1.53175)，绝对禁带相对值对应为19.026％。
实施例3.高折射率介质采用硅，低折射率介质为空气，a＝0.585，平板介质柱宽度D＝0.049a＝0.029微米，圆环柱外径R＝0.296a＝0.173微米，圆环柱内径为0.028微米，得到光子晶体的绝对禁带范围为(1.41763～1.17134)，绝对禁带的相对值对应为19.026％。
实施例4.高折射率介质采用硅，低折射率介质为空气，a＝0.585，平板介质柱宽度D＝0.067a＝0.039微米，圆环柱外径R＝0.34a＝0.199微米，圆环柱内径为0.119微米，得到光子晶体的绝对禁带范围为(1.37218～1.30510)，绝对禁带的相对值对应为5.011％。
实施例5.高折射率介质采用硅，低折射率介质为空气，a＝0.585，平板介质柱宽度D＝0.067a＝0.039微米，圆环柱外径R＝0.26a＝0.152微米，圆环柱内径为0.061微米，得到光子晶体的绝对禁带范围为(1.26582～1.16764)，绝对禁带的相对值对应为8.066％。
实施例6.高折射率介质采用硅，低折射率介质为空气，a＝0.455， 平板介质柱宽度D＝0.048a＝0.022微米，圆环柱外径R＝0.38a＝0.173微米，圆环柱内径为0.053微米，得到光子晶体的绝对禁带范围为(1.23246～1.11487)，绝对禁带的相对值对应为10.016％。
实施例7.高折射率介质采用硅，低折射率介质为空气，a＝0.45，平板介质柱宽度D＝0.029a＝0.013微米，圆环柱外径R＝0.3a＝0.135微米，圆环柱内径为0.054微米，得到光子晶体的绝对禁带范围为(0.97308～0.85701)，绝对禁带的相对值对应为12.087％。
实施例8.高折射率介质采用硅，低折射率介质为空气，a＝0.425，平板介质柱宽度D＝0.048a＝0.020微米，圆环柱外径R＝0.26a＝0.111微米，圆环柱内径为0.034微米，得到光子晶体的绝对禁带范围为(0.93079～0.79715)，绝对禁带的相对值对应为15.468％。
实施例9.高折射率介质采用硅，低折射率介质为空气，a＝0.385，平板介质柱宽度D＝0.048a＝0.018微米，圆环柱外径R＝0.3a＝0.116微米，圆环柱内径为0.035微米，得到光子晶体的绝对禁带范围为(0.92702～0.77334)，绝对禁带的相对值对应为18.079％。
以上所述本发明在具体实施方式及应用范围均有改进之处，不应当理解为对本发明限制。

Claims (10)

  1. 一种圆环杆与平板连杆的二维正方晶格光子晶体，其特征在于：所述的光子晶体包括高折射率介质柱和低折射率背景介质柱；所述的光子晶体结构由元胞按正方晶格排列而成；所述的高折射率介质柱由平板介质柱与圆环介质柱连接构成；所述的平板介质柱的宽度D为0.01a～0.2a，所述的圆环柱的外径R为0.1a～0.5a，所述的圆环柱的内外径之差与圆环外径的比值T为0.01～0.99。
  2. 按照权利要求1所述的圆环杆与平板连杆的二维正方晶格光子晶体，其特征在于：所述元胞的左平板连接杆的最左端到右平板连接杆的最右端的距离为a；所述元胞的下平板连接杆的最底端到上平板连接杆的最顶端的距离为a。
  3. 按照权利要求1所述的圆环杆与平板连杆的二维正方晶格光子晶体，其特征在于：所述的高折射率介质为硅、砷化镓、二氧化钛或者折射率大于2的高折射率介质；
  4. 按照权利要求3所述的圆环杆与平板连杆的二维正方晶格光子晶体，其特征在于：所述的高折射率介质为硅，其折射率为3.4。
  5. 按照权利要求1所述的圆环杆与平板连杆的二维正方晶格光子晶体，其特征在于：所述的低折射率背景介质为空气、氟化镁、二氧化硅或者低折射率介质。
  6. 按照权利要求5所述的圆环杆与平板连杆的二维正方晶格光子晶体，其特征在于：所述的低折射率背景介质为空气。
  7. 按照权利要求1所述的圆环杆与平板连杆的二维正方晶格光子晶体， 其特征在于，设置0.029a≤D≤0.124a，0.26a≤R≤0.38a，0.206≤T≤0.99，所述光子晶体结构的绝对禁带相对值大于5％。
  8. 按照权利要求1所述的圆环杆与平板连杆的二维正方晶格光子晶体，其特征在于，设置0.029a≤D≤0.086a，0.26a≤R≤0.38a，0.304≤T≤0.99，所述光子晶体结构的绝对禁带相对值大于10％。
  9. 按照权利要求1所述的圆环杆与平板连杆的二维正方晶格光子晶体，其特征在于，设置0.0385a≤D≤0.05275a，0.28a≤R≤0.34a，0.4755≤T≤0.99，所述光子晶体结构的绝对禁带相对值大于15％。
  10. 按照权利要求1所述的圆环杆与平板连杆的二维正方晶格光子晶体，其特征在于，设置D为0.049a，R为0.296a，T为0.838，绝对禁带宽度相对值为19.026％。
PCT/CN2015/076043 2014-04-11 2015-04-08 一种圆环杆与平板连杆的二维正方晶格光子晶体 Ceased WO2015154661A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/253,765 US10473819B2 (en) 2014-04-11 2016-08-31 2D square lattice photonic crystal based on hollow cylinder and connecting plates

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410145359.8 2014-04-11
CN201410145359.8A CN103901536B (zh) 2014-04-11 2014-04-11 一种圆环杆与平板连杆的二维正方晶格光子晶体

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US15/253,765 Continuation US10473819B2 (en) 2014-04-11 2016-08-31 2D square lattice photonic crystal based on hollow cylinder and connecting plates

Publications (1)

Publication Number Publication Date
WO2015154661A1 true WO2015154661A1 (zh) 2015-10-15

Family

ID=50992975

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2015/076043 Ceased WO2015154661A1 (zh) 2014-04-11 2015-04-08 一种圆环杆与平板连杆的二维正方晶格光子晶体

Country Status (3)

Country Link
US (1) US10473819B2 (zh)
CN (1) CN103901536B (zh)
WO (1) WO2015154661A1 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103901536B (zh) * 2014-04-11 2016-08-17 深圳大学 一种圆环杆与平板连杆的二维正方晶格光子晶体
CN104122607B (zh) * 2014-07-28 2016-01-20 欧阳征标 基于三连杆柱和圆环柱的大绝对禁带正方晶格光子晶体
CN104155718B (zh) * 2014-07-28 2017-07-04 欧阳征标 基于高折射率内圆外方空心柱的正方晶格光子晶体
CN104101946B (zh) * 2014-07-28 2017-07-18 欧阳征标 基于单连杆柱和圆环柱的大绝对禁带正方晶格光子晶体
CN104101949B (zh) * 2014-07-28 2017-01-25 欧阳征标 基于十字连杆柱和圆柱的大绝对禁带正方晶格光子晶体
CN104297842B (zh) * 2014-09-29 2017-03-22 深圳市浩源光电技术有限公司 一种十字连杆与旋转正方杆的二维正方晶格光子晶体
CN104459989B (zh) * 2014-12-10 2017-03-08 深圳市浩源光电技术有限公司 基于平板光子晶体的高消光比te光开关
CN104849805B (zh) * 2015-05-27 2017-10-03 欧阳征标 基于旋转空心正方柱的二维正方晶格光子晶体
CN104849806B (zh) * 2015-05-27 2017-10-03 欧阳征标 基于十字连杆与旋转空心正方柱的二维正方晶格光子晶体
CN104820264B (zh) * 2015-05-27 2017-11-14 欧阳征标 旋转空心正方柱与旋转三角柱二维正方晶格光子晶体
KR101754355B1 (ko) 2015-12-09 2017-07-06 한국화학연구원 색변환 광결정 구조체 및 이를 이용한 색변환 광결정 센서
CN114594597A (zh) * 2022-03-23 2022-06-07 周宇森 一种基于散射区划分的高性能光子晶体及其设计方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1978716A (zh) * 2005-12-07 2007-06-13 中国科学院半导体研究所 具有大绝对带隙的二维光子晶体
US20070297734A1 (en) * 2006-06-23 2007-12-27 Mihai Ibanescu Efficient terahertz sources by optical rectification in photonic crystals and metamaterials exploiting tailored transverse dispersion relations
CN101251701A (zh) * 2008-01-02 2008-08-27 深圳大学 “十”字波导光子晶体光学“或”、“非”、“异或”逻辑门的实现方法
US20090148114A1 (en) * 2007-12-10 2009-06-11 Canon Kabushiki Kaisha Three-dimensional photonic crystal and manufacturing method thereof
CN103176272A (zh) * 2011-12-21 2013-06-26 北京邮电大学 二维光子晶体最大绝对带隙结构优化方法
CN103901536A (zh) * 2014-04-11 2014-07-02 深圳大学 一种圆环杆与平板连杆的二维正方晶格光子晶体

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1109038A1 (en) * 1999-12-17 2001-06-20 Corning Incorporated Method for manufacturing an optical integrated circuit
AU2001283369A1 (en) * 2000-08-15 2002-02-25 Corning Incorporated Active photonic crystal waveguide device
JP2003295143A (ja) * 2002-03-29 2003-10-15 Hitachi Ltd 光機能素子及びその製造方法
JP4735259B2 (ja) * 2003-06-19 2011-07-27 日本電気株式会社 フォトニック結晶の構造
US7161188B2 (en) * 2004-06-28 2007-01-09 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element
US8009953B2 (en) * 2005-03-05 2011-08-30 Kyoto University Three-dimensional photonic crystal and its manufacturing method thereof
US20080267557A1 (en) * 2005-12-29 2008-10-30 Zheng Wang Integrated Magneto-Optical Devices for Uni-Directional Optical Resonator Systems
JP4564929B2 (ja) * 2006-02-21 2010-10-20 キヤノン株式会社 ３次元フォトニック結晶の形成方法
JP4900572B2 (ja) * 2006-03-20 2012-03-21 国立大学法人京都大学 ２次元フォトニック結晶
JP4881056B2 (ja) * 2006-05-01 2012-02-22 キヤノン株式会社 電磁波吸収体部を含むフォトニック結晶電磁波デバイス、及びその製造方法
US7499480B2 (en) * 2006-11-16 2009-03-03 Canon Kabushiki Kaisha Photonic crystal structure and surface-emitting laser using the same
US7561761B2 (en) * 2007-01-03 2009-07-14 Hewlett-Packard Development Company, L.P. Photonic systems and methods for encoding data in carrier electromagnetic waves
JP5063139B2 (ja) * 2007-02-27 2012-10-31 日本航空電子工業株式会社 フォトニック構造体
JP5272173B2 (ja) * 2007-03-26 2013-08-28 国立大学法人京都大学 ２次元フォトニック結晶
WO2010101776A2 (en) * 2009-03-02 2010-09-10 Massachusetts Institute Of Technology Zero group-velocity modes in chalcogenide holey photonic crystal fibers
JP5183555B2 (ja) * 2009-04-02 2013-04-17 キヤノン株式会社 面発光レーザアレイ
CN101788727B (zh) * 2009-12-14 2011-11-09 深圳大学 基于磁光腔耦合的光子晶体四端口环行器
CN101726873B (zh) * 2009-12-14 2012-08-08 深圳大学 光子晶体三端口环行器
US8923661B2 (en) * 2011-07-27 2014-12-30 Massachusetts Institute Of Technology 2-pattern compound photonic crystals with a large, complete photonic band gap

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1978716A (zh) * 2005-12-07 2007-06-13 中国科学院半导体研究所 具有大绝对带隙的二维光子晶体
US20070297734A1 (en) * 2006-06-23 2007-12-27 Mihai Ibanescu Efficient terahertz sources by optical rectification in photonic crystals and metamaterials exploiting tailored transverse dispersion relations
US20090148114A1 (en) * 2007-12-10 2009-06-11 Canon Kabushiki Kaisha Three-dimensional photonic crystal and manufacturing method thereof
CN101251701A (zh) * 2008-01-02 2008-08-27 深圳大学 “十”字波导光子晶体光学“或”、“非”、“异或”逻辑门的实现方法
CN103176272A (zh) * 2011-12-21 2013-06-26 北京邮电大学 二维光子晶体最大绝对带隙结构优化方法
CN103901536A (zh) * 2014-04-11 2014-07-02 深圳大学 一种圆环杆与平板连杆的二维正方晶格光子晶体

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SHI, PENG;: "Designing Photonic Crystal with Large Absolute Band Gap and Superlens Imaging of Planar Photonic Crystal", CHINA DOCTORAL DISSERTATIONS FULL-TEXT DATABASE (BASIC SCIENCES, 2013, pages 34 - 37 *

Also Published As

Publication number Publication date
CN103901536B (zh) 2016-08-17
US20160370501A1 (en) 2016-12-22
US10473819B2 (en) 2019-11-12
CN103901536A (zh) 2014-07-02

Similar Documents

Publication Publication Date Title
WO2015154661A1 (zh) 一种圆环杆与平板连杆的二维正方晶格光子晶体
WO2016015630A1 (zh) 基于十字连杆柱和圆柱的大绝对禁带正方晶格光子晶体
Ding et al. Ultrahigh-contrast-ratio silicon Fano diode
US20170242156A1 (en) Two-dimensional square-lattice photonic crystal with cross-shaped connecting rods and rotated square rods
CN104101946B (zh) 基于单连杆柱和圆环柱的大绝对禁带正方晶格光子晶体
CN104122607B (zh) 基于三连杆柱和圆环柱的大绝对禁带正方晶格光子晶体
CN104155718B (zh) 基于高折射率内圆外方空心柱的正方晶格光子晶体
US20180074260A1 (en) Two-dimensional square-lattice photonic crystal with rotated hollow square rods and rotated triangle rods
CN109324358B (zh) 一种低折射率比下大完全光子带隙光子晶体的设计方法
CN111308582B (zh) 二维光子晶体平板、设计方法及利用此平板的光器件
CN104950384B (zh) 圆孔式正方晶格光子晶体低折射率双补偿散射柱直角波导
CN100424236C (zh) 具有大绝对带隙的二维光子晶体
CN104849806B (zh) 基于十字连杆与旋转空心正方柱的二维正方晶格光子晶体
CN109669242B (zh) 一种光子晶体波导对角模干涉fano共振结构
CN104950388A (zh) 圆孔式正方晶格光子晶体低折射率单补偿散射柱直角波导
CN104950385A (zh) 方柱式正方晶格光子晶体高折射率双补偿散射柱直角波导
WO2016188396A1 (zh) 基于旋转空心正方柱的二维正方晶格光子晶体
CN107290826B (zh) 一种基于风车型缺陷的具有大的tm禁带的二维正方晶格光子晶体结构
Janrao et al. Improved efficiency and enhanced slow light performance in photonic crystal waveguides using rectangular unit cells
CN104950389B (zh) 圆柱式正方晶格光子晶体高折射率双补偿散射柱直角波导
CN104950383A (zh) 方孔式正方晶格光子晶体低折射率双补偿散射柱直角波导
Vertchenko et al. Index-near-zero modes in Si photonic crystal supported by accidental bound states in the continuum
JP2015152689A (ja) 光共振器
CN104950386A (zh) 方柱式正方晶格光子晶体高折射率单补偿散射柱直角波导
CN114594597A (zh) 一种基于散射区划分的高性能光子晶体及其设计方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15777127

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15777127

Country of ref document: EP

Kind code of ref document: A1