WO2015154493A1 - 半导体加工设备 - Google Patents

半导体加工设备 Download PDF

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WO2015154493A1
WO2015154493A1 PCT/CN2014/093104 CN2014093104W WO2015154493A1 WO 2015154493 A1 WO2015154493 A1 WO 2015154493A1 CN 2014093104 W CN2014093104 W CN 2014093104W WO 2015154493 A1 WO2015154493 A1 WO 2015154493A1
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Prior art keywords
chamber
semiconductor processing
ring
processing apparatus
reaction chamber
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PCT/CN2014/093104
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English (en)
French (fr)
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张鹏
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北京北方微电子基地设备工艺研究中心有限责任公司
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Publication of WO2015154493A1 publication Critical patent/WO2015154493A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

Definitions

  • the present invention relates to the field of semiconductor processing technology, and in particular to a semiconductor processing apparatus.
  • Semiconductor processing equipment typically requires the reaction chamber to be under vacuum to ensure process environment stability. Moreover, when the process is carried out, it is necessary to continuously introduce a process gas into the reaction chamber to react with the wafer, and at the same time, it is necessary to continuously pump the air using a pumping system (including an exhaust pipe and a vacuum pump, etc.) to make the reaction The exhaust gas exits the reaction chamber, thereby maintaining a certain degree of vacuum inside the reaction chamber. In addition, for semiconductor processing equipment with only reaction chambers, it is also necessary to inflate the reaction chamber after the end of the process to return it to the atmosphere for the operation of taking/disposing the wafer, so that before the next process It is necessary to pump again using the pumping system to bring the reaction chamber to a vacuum.
  • a pumping system including an exhaust pipe and a vacuum pump, etc.
  • the pumping system is required to have the following functions: 1) stable and uniform pumping airflow; 2) The by-product particles contained in the exhaust gas after the reaction can be discharged into the reaction chamber with the gas flow in time, and the return to the reaction chamber can be suppressed.
  • FIG. 1 is a schematic structural view of a conventional semiconductor processing apparatus.
  • the pumping chamber 107 is disposed below the reaction chamber 101.
  • a stage 104 is disposed in the reaction chamber 101 for carrying the workpiece 105 to be processed;
  • an inlet 103 is provided at the top center position of the reaction chamber 101, and is at the center of the bottom of the reaction chamber 101.
  • An exhaust port 102 is disposed at the position;
  • the pumping chamber 107 is fixed to the bottom of the reaction chamber 101 by screws 106, and a sealing ring 111 is disposed at the junction of the pumping chamber 107 and the reaction chamber 101 to The gap between them is sealed.
  • the intake port of the pumping chamber 107 communicates with the intake port 103 of the reaction chamber 101.
  • the air outlet of the pumping chamber 107 is laterally disposed to facilitate connection of a duct (not shown) of the pumping system.
  • a detachable bottom cover 110 is further disposed at the bottom of the pumping chamber 107. Specifically, the bottom cover 110 is fixed by the bolt 108 and the nut 109. The bottom of the pumping chamber 107 is provided, and a seal ring 111 is provided between the bottom cover 110 and the suction chamber 107 to seal the gap therebetween.
  • FIG. 2 is a flow simulation diagram of a conventional semiconductor processing apparatus.
  • the process gas flows into the reaction chamber 101 through the gas inlet 103 of the reaction chamber 101, and reacts with the workpiece 105 placed on the stage 104;
  • the exhaust gas sequentially flows into the pumping chamber 107 from the exhaust port 102 of the reaction chamber 101 and the intake port of the pumping chamber 107, and is then withdrawn from the air outlet of the pumping chamber 107 by the pumping system.
  • the above-described pumping chamber inevitably has the following problems in practical applications, that is, as can be seen from FIG. 2, eddy current is formed due to the airflow encountering a barrier at the bottom corner of the pumping chamber 107, especially in the pumping chamber 107.
  • a very large eddy current and rebound flow will be formed at the bottom corner opposite the gas outlet, which will not only cause some of the by-product particles carried in the gas flow to accumulate in the bottom corner, but also the vortex and rebound flow will carry some by-product particles back to the reaction chamber.
  • the chamber 101 is such that the reaction chamber 101 is contaminated.
  • the present invention aims to at least solve one of the technical problems existing in the prior art, and proposes a semiconductor processing apparatus which can not only reduce the accumulation of some by-product particles carried in a gas stream, but also suppress accumulated by-product particles. It is lifted by the airflow so that by-product particles can be prevented from returning to the reaction chamber.
  • a semiconductor processing apparatus comprising a reaction chamber and an evacuation chamber disposed at a bottom of the reaction chamber, an exhaust port being provided at a bottom of the reaction chamber, and corresponding Provided at the top of the pumping chamber is an air inlet, the air inlet is connected to the air outlet; and an air outlet is arranged on a side wall of the air pumping chamber for discharging The gas in the evacuation chamber.
  • a funnel-shaped tapered ring is disposed in the air extraction chamber and below the air outlet, the lower port of the tapered ring is smaller than the upper port; the tapered ring is used to
  • the pumping chamber is partitioned into an upper chamber and a lower chamber, the upper chamber and the lower chamber being in communication through a ring aperture of the tapered ring.
  • the pumping chamber further comprises a particle storage tank, the particle storage tank being detachably disposed at a bottom of the lower chamber for storing by-product particles entering the lower chamber;
  • a sealing ring is disposed between the particle storage tank and the lower chamber for sealing a gap between the two.
  • annular passage is provided in the side wall of the particle storage tank, and the annular passage is circumferentially surrounding the particle storage tank and is used for accommodating cooling water.
  • the semiconductor processing apparatus further includes a cooling water source for introducing cooling water into the annular passage via the water inlet, and recovering cooling water in the annular passage via the water outlet .
  • the particle storage tank is fixed under the lower chamber by a fastener connection manner or a snap connection manner.
  • a columnar ring is further disposed at the bottom of the tapered ring, and the ring hole of the column ring is The ring holes of the tapered ring are in communication, and the port size of the column ring is adapted to the size of the lower port of the tapered ring.
  • a sealing ring is arranged between the pumping chamber and the reaction chamber for sealing the gap between the two.
  • the exhaust port of the reaction chamber is located at a central position of the bottom of the reaction chamber.
  • the inlet of the reaction chamber is disposed at a central position of the top of the reaction chamber for uniformly delivering the process gas to the interior of the reaction chamber.
  • the semiconductor processing apparatus further includes an air extraction system, and the air extraction system is connected to an air outlet of the air extraction chamber for externally extracting gas in the air extraction chamber.
  • the semiconductor processing apparatus provided by the present invention is provided with a tapered ring in a region below the air outlet in the air suction chamber, the lower port of the tapered ring is smaller than the upper port, and the air extraction chamber is divided into the upper chamber And the lower chamber, and the two are connected by a ring hole of the tapered ring.
  • the reaction chamber When the reaction chamber is vented, the gas discharged from the exhaust port of the reaction chamber passes through the intake port of the pumping chamber, and most of the gas passes through the upper chamber, and Exhaust from the air outlet of the pumping chamber. During this process, some of the by-product particles carried by the airflow will fall through the ring hole of the tapered ring and accumulate in the lower chamber.
  • the tapered ring adopts a similar "funnel" structure in which the lower port is smaller than the upper port, the inclined inner wall surface is not only more favorable for airflow than the right angle corner formed by the vertical side wall of the suction chamber in the prior art.
  • the ground flows to the air outlet of the pumping chamber, and the air flow can not cause eddy current and rebound flow, so that the air flow can carry the by-product particles more effectively through the air outlet of the pumping chamber, thereby reducing the airflow The accumulation of some of the by-product particles.
  • the tapered ring of the "funnel" structure can make it difficult for the by-product particles accumulated in the lower chamber to be lifted by the gas flow, thereby preventing the by-product particles from returning to the reaction chamber.
  • FIG. 1 is a schematic structural view of a conventional semiconductor processing apparatus
  • FIG. 2 is a flow simulation diagram of a conventional semiconductor processing apparatus
  • FIG. 3 is a cross-sectional view of a semiconductor processing apparatus according to an embodiment of the present invention.
  • FIG. 4 is a flow simulation diagram of a semiconductor processing apparatus according to an embodiment of the present invention.
  • a semiconductor processing apparatus includes a reaction chamber 201, an evacuation chamber 207 disposed at the bottom of the reaction chamber 201, and an air extraction system.
  • an exhaust port 202 is disposed at the bottom of the reaction chamber 201, and correspondingly, an intake port 207c is disposed at the top of the pumping chamber 207, and the air inlet port 207c is sealingly connected with the exhaust port 202;
  • An air outlet 207b is provided on the side wall of the air chamber 207; the air outlet 207b is connected to the exhaust pipe 212 of the air suction system, and the air suction system is for extracting the gas in the air extraction chamber 207 via the air outlet 207b.
  • the gas in the reaction chamber 201 is sequentially discharged into the evacuation chamber 207 via the exhaust port 202 and the intake port 207c, and then extracted by the air suction system via the air outlet 207b.
  • the pumping chamber 207 is fixed to the bottom of the reaction chamber 201 by screws 206, and a sealing ring 211 is provided between the pumping chamber 207 and the reaction chamber 201 for the pumping chamber.
  • the gap between 207 and reaction chamber 201 is sealed. It will be readily understood that the size of the inlet 207c should be no smaller than the size of the vent 202 to ensure sealing of the reaction chamber 201.
  • a trap ring 207a is disposed in the pumping chamber 207 and below the air outlet 207b, the lower port of the tapered ring 207a is smaller than the upper port, in other words, the ring hole of the tapered ring 207a is a tapered hole, and The diameter of the tapered hole is gradually reduced from top to bottom, so that the tapered ring 207a is shaped Into a "funnel" structure.
  • the tapered ring 207a divides the pumping chamber 207 into an upper chamber and a lower chamber, that is, the tapered ring 207a separates the pumping chamber 207 into upper and lower spaces, and the upper chamber and the lower chamber
  • the chamber is connected by a ring hole (tapered hole) of the tapered ring 207a.
  • reaction chamber 201 When the reaction chamber 201 is vented, after the gas discharged from the reaction chamber 201 enters the pumping chamber 207, most of the gas passes through the upper chamber and is discharged from the pumping chamber by the pumping system.
  • the gas port 207b is withdrawn, and during this process, some of the by-product particles carried by the gas flow are dropped through the ring hole of the tapered ring 207a and accumulated in the lower chamber.
  • FIG. 4 is a flow simulation diagram of a semiconductor processing apparatus according to an embodiment of the present invention.
  • the eddy current and the rebound flow do not occur when the airflow passes through the inclined inner wall surface of the tapered ring 207a, because the tapered ring 207a adopts a similar "funnel" structure in which the lower port is smaller than the upper port, and the inner wall surface thereof An inclined wall surface is formed at the bottom of the upper chamber, and the inclined wall surface not only allows the airflow flowing through the upper chamber to flow more smoothly to the right angle corner formed by the vertical side wall of the suction chamber in the prior art.
  • the air outlet 207b of the air pumping chamber can also allow the airflow to carry the by-product particles more efficiently from the air outlet port 207b, thereby reducing the accumulation of some by-product particles carried in the airflow.
  • the flow rate of the gas stream is the slowest when flowing through the annular hole of the tapered ring 207a, which causes a portion of the by-product particles to fall through the ring hole as the gas stream flows through the ring hole.
  • the lower chamber, and the by-product particles attached to the inner wall of the upper chamber also enter the lower chamber along the inclined wall surface of the annular hole under the action of gravity after being aggregated into larger particles.
  • the gas flow since the gas flow generates a small eddy current at the right corner of the lower chamber, this will carry the by-product particles in the lower chamber to the edge of the lower chamber, so that the by-product particles accumulated in the lower chamber can be made difficult to be re-flowed. Raising, in turn, prevents by-product particles from returning to the reaction chamber.
  • a columnar ring 207d is further disposed at the bottom of the tapered ring 207a.
  • the ring hole of the column ring 207d communicates with the ring hole of the tapered ring 207a, and the port size of the column ring 207d is opposite to the size of the lower port of the tapered ring. adaptation.
  • the by-product particles can be further prevented from escaping upward from the lower chamber, so that the inhibition of the ascending of the by-product particles can be enhanced.
  • the pumping chamber further includes a particle storage tank 210.
  • the particle storage tank 210 is detachably disposed below the lower chamber and communicates with the lower chamber for storing by-products entering the lower chamber. Particles.
  • the lower chamber is a bottomless cylindrical structure and a tapered ring 207a is provided therein, and the bottom wall of the particle storage tank 210 is the bottom wall of the suction chamber.
  • the detachable manner may be that the particle storage tank 210 is fixed under the lower chamber by a fastener connection manner or a snap connection manner such as a bolt, a screw, a pin, a rivet or the like.
  • the bolts may be studs 208 and nuts 209.
  • a seal ring 211 is provided between the particle storage tank 210 and the lower chamber for sealing the gap between the particle storage tank 210 and the lower chamber.
  • the particle storage tank 210 can be considered a bottom cover of the lower chamber, and the bottom cover can be detachably coupled to the lower chamber.
  • annular passage 210b is provided in the side wall of the particle storage tank 210 along the circumferentially surrounding particle storage tank 210, in other words, the annular passage 210b surrounds the outer space of the internal space of the particle storage tank 210.
  • the cooling of the particle storage tank 210 by introducing cooling water into the annular passage 210b, and indirectly lowering the internal temperature of the lower chamber, thereby facilitating cooling of the high-temperature airflow entering the lower chamber, thus not only improving the auxiliary
  • the product particles are accumulated efficiently, and the by-product particles can be further inhibited from escaping from the lower chamber.
  • the cooling water is introduced into the annular passage 210b by means of circulating water supply.
  • the water inlet 210a and the water outlet 210c are respectively disposed on the annular passage 210b, and the semiconductor processing equipment further includes cooling.
  • a water source (not shown) for utilizing the water inlet port for introducing cooling water into the annular passage 210b via the water inlet 210a of the annular passage 210b, and using the return water interface of the cooling water source via the annular passage Water outlet of channel 210b
  • the port 210c recovers the cooling water in the annular passage 210b, thereby circulating the cooling water in the annular passage 210b. It will be readily understood that the position of the water inlet 210a and the water outlet 210c on the annular passage 210b is different, and it should be ensured that the cooling water can flow through various positions in the annular passage 210b.
  • the vent 202 is disposed at a central position at the bottom of the reaction chamber 201 to enable a symmetrical and uniform pumping gas flow, thereby improving the process stability of the reaction chamber 201.
  • an air inlet 203 is provided at a central position at the top of the reaction chamber 201 for uniformly transporting the process gas to the inside of the reaction chamber 201 for transporting
  • the process gas does not affect the uniformity of the gas within the reaction chamber 201.
  • the process gas flows from the gas inlet 203 into the reaction chamber 201 and acts on the workpiece 205 disposed on the carrier 204; the reacted exhaust gas carries the by-product particles downwardly, and
  • the exhaust port 202 flows into the pumping chamber 207 and is then withdrawn by the pumping system.
  • the air inlet and the exhaust port of the reaction chamber may be disposed at any other position on the side of the chamber or the like as the case may be, and is not limited to the top of the chamber in the embodiment.
  • the bottom preferably, ensures uniformity of intake and exhaust.
  • the gas in the pumping chamber 207 is extracted by the air suction system via the air outlet 207b, but the present invention is not limited thereto, and in practice, the pumping can be omitted.
  • the system is naturally discharged only by the air flow via the air outlet 207b of the pumping chamber.

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Abstract

一种半导体加工设备，包括反应腔室（201）和设置在反应腔室底部的抽气腔室（207），在反应腔室的底部设置有排气口（202），且对应地在抽气腔室的顶部设置有进气口（207c），进气口与排气口连接；在抽气腔室的侧壁上设置有出气口（207b），用以排出抽气腔室内的气体。在抽气腔室内，且位于出气口的下方设置有呈漏斗状的锥状环（207a），锥状环的下端口小于上端口；锥状环用于将抽气腔室分隔为上腔室和下腔室，上腔室和下腔室通过锥状环的环孔相连通。半导体加工设备可以减少气流中携带的部分副产物颗粒的积存，而且可以抑制积存的副产物颗粒被气流扬起，从而避免副产物颗粒返回反应腔室。

Description

半导体加工设备 技术领域
本发明涉及半导体加工技术领域，具体地，涉及一种半导体加工设备。
背景技术
半导体加工设备通常要求其反应腔室处于真空状态，以保证工艺环境的稳定性。而且，进行工艺时，需要不断地向反应腔室内通入工艺气体，以与晶片相互反应，同时需要利用抽气系统(包含有抽气管道和真空泵等等)持续抽气，以使反应后的废气排出反应腔室，从而保持反应腔室内具有一定的真空度。此外，针对只有反应腔室的半导体加工设备，还需要在工艺结束后对反应腔室进行充气，使其恢复至大气状态，以便于进行取/放晶片的操作，这样，在进行下一次工艺之前，就需要再次利用抽气系统抽气，以使反应腔室达到真空状态。
上述利用抽气系统抽气的过程往往会扰动反应腔室内的气流，导致工艺环境的稳定性受到影响，为此，就要求抽气系统应具备以下功能：1)稳定、均匀的抽气气流；2)能够及时地将反应后的废气中所含有的副产物颗粒随气流排出反应腔室，并抑制其返回反应腔室。
为了能够获得稳定、均匀的抽气气流，最常用的做法是将反应腔室的与抽气系统连接的排气口设置在反应腔室下方的中心位置处。然而，这在实际应用中经常会遇到抽气管道的口径有限，或者抽气管道因受到反应腔室下方空间的限制而不便于在竖直方向设置等的问题，为了解决这些问题，通常在反应腔室的排气口和抽气系统之间设置一个抽气腔室，以起到过渡作用。而且，抽气腔室的进气口尺寸可以针对反应腔室的排气口尺寸做适应性设计，同时抽气腔室的排气口的方向也可以灵活 布置。
图1为现有的半导体加工设备的结构示意图。如图1所示，抽气腔室107设置在反应腔室101的下方。具体地，在反应腔室101内设置有载片台104，用于承载被加工工件105；在反应腔室101的顶部中心位置处设置有进气口103，并且在反应腔室101底部的中心位置处设置有排气口102；抽气腔室107通过螺钉106固定在反应腔室101的底部，在抽气腔室107与反应腔室101的连接处设置有密封圈111，以对二者之间的间隙进行密封。抽气腔室107的进气口与反应腔室101的进气口103相连通。抽气腔室107的出气口横向设置，以便于连接抽气系统的管道(图中未示出)。此外，为了方便清理在抽气腔室107内积存的副产物颗粒，在抽气腔室107的底部还设置有可拆卸的底盖110，具体地，底盖110利用螺栓108和螺母109固定在抽气腔室107的底部，并且在底盖110与抽气腔室107之间设置有密封圈111，以对二者之间的间隙进行密封。
图2为现有的半导体加工设备的气流仿真图。如图2所示，在进行工艺的过程中，工艺气体通过反应腔室101的进气口103流入反应腔室101中，并与置于载片台104上的被加工工件105发生反应；反应后的废气依次自反应腔室101的排气口102和抽气腔室107的进气口流入抽气腔室107中，然后由抽气系统自抽气腔室107的出气口抽出。
上述抽气腔室在实际应用中不可避免地存在以下问题，即：由图2可知，由于气流在抽气腔室107的底部角落处遇到阻挡而形成涡流，尤其在抽气腔室107的出气口对面的底部角落处会形成非常大的涡流和反弹流，这不仅会导致气流中所携带的部分副产物颗粒在底部角落堆积，而且涡流和反弹流还会携带部分副产物颗粒返回反应腔室101，从而使反应腔室101被污染。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种半导体加工设备，其不仅可以减少气流中所携带的部分副产物颗粒的积存，而且还可以抑制积存的副产物颗粒被气流扬起，从而可以避免副产物颗粒返回反应腔室。
为实现本发明的目的而提供一种半导体加工设备，其包括反应腔室和设置在所述反应腔室底部的抽气腔室，在所述反应腔室的底部设置有排气口，且对应地在所述抽气腔室的顶部设置有进气口，所述进气口与所述排气口连接；并且，在所述抽气腔室的侧壁上设置有出气口，用以排出所述抽气腔室内的气体。其中，在所述抽气腔室内，且位于所述出气口的下方设置有呈漏斗状的锥状环，所述锥状环的下端口小于上端口；所述锥状环用于将所述抽气腔室分隔为上腔室和下腔室，所述上腔室和下腔室通过所述锥状环的环孔相连通。
其中，所述抽气腔室还包括颗粒储存槽，所述颗粒储存槽采用可拆卸的方式设置在所述下腔室的底部，用于储存进入所述下腔室内的副产物颗粒；并且在所述颗粒储存槽与所述下腔室之间设置有密封圈，用于对二者之间的间隙进行密封。
其中，在所述颗粒储存槽的侧壁内设置有环状通道，所述环状通道沿周向环绕所述颗粒储存槽而设置，且用于容纳冷却水。
其中，在所述环状通道上分别设置有进水口和出水口。并且所述半导体加工设备还包括冷却水源，所述冷却水源用于经由所述进水口向所述环状通道内通入冷却水，并经由所述出水口回收所述环状通道内的冷却水。
其中，所述颗粒储存槽采用紧固件连接方式或卡接方式固定在所述下腔室的下方。
其中，在所述锥状环的底部还设置有柱状环，所述柱状环的环孔与 所述锥状环的环孔相连通，且所述柱状环的端口尺寸与所述锥状环的下端口尺寸相适配。
其中，在所述抽气腔室与所述反应腔室之间设置有密封圈，用于对二者之间的间隙进行密封。
其中，所述反应腔室的排气口位于所述反应腔室底部的中心位置处。
其中，所述反应腔室的进气口设置在所述反应腔室顶部的中心位置处，用以均匀地向所述反应腔室的内部输送工艺气体。
其中，所述半导体加工设备还包括抽气系统，所述抽气系统连接所述抽气腔室的出气口，用于向外抽取所述抽气腔室内的气体。
本发明具有以下有益效果：
本发明提供的半导体加工设备，其在抽气腔室内的位于出气口的下方的区域设置有锥状环，该锥状环的下端口小于上端口，且将抽气腔室分隔为上腔室和下腔室，并且二者通过锥状环的环孔相连通。在对反应腔室进行排气时，自反应腔室的排气口排出的气体在经由抽气腔室的进气口进入抽气腔室后，其中的大部分气体从上腔室通过，并自抽气腔室的出气口排出，在此过程中，气流携带的部分副产物颗粒会经锥状环的环孔掉落至下腔室内积存。
而且，由于锥状环采用下端口小于上端口的类似“漏斗”结构，其倾斜的内壁面相对于现有技术中抽气腔室由垂直侧壁形成的直角角落而言，不仅更有利于气流顺畅地流动至抽气腔室的出气口，而且可以使气流不会出现涡流和反弹流，从而气流可以更有效地携带副产物颗粒经抽气腔室的出气口排出，进而可以减少气流中所携带的部分副产物颗粒的积存。此外，“漏斗”结构的锥状环还可以使积存在下腔室内的副产物颗粒很难再被气流扬起，从而可以避免副产物颗粒返回反应腔室。
附图说明
图1为现有的半导体加工设备的结构示意图；
图2为现有的半导体加工设备的气流仿真图；
图3为本发明实施例提供的半导体加工设备的剖视图；以及
图4为本发明实施例提供的半导体加工设备的气流仿真图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的半导体加工设备进行详细描述。
图3为本发明实施例提供的半导体加工设备的剖视图。请参阅图3，本发明实施例提供的半导体加工设备包括反应腔室201、设置在反应腔室201底部的抽气腔室207和抽气系统。其中，在反应腔室201的底部设置有排气口202，且对应地在抽气腔室207的顶部设置有进气口207c，进气口207c与排气口202密封连接；并且，在抽气腔室207的侧壁上设置有出气口207b；出气口207b与抽气系统的排气管212连接，抽气系统用于经由出气口207b抽取抽气腔室207内的气体。在排气时，反应腔室201内的气体依次经由排气口202、进气口207c排入抽气腔室207内，再被抽气系统经由出气口207b抽出。
在本实施例中，抽气腔室207通过螺钉206固定在反应腔室201的底部，并且在抽气腔室207与反应腔室201之间设置有密封圈211，用于对抽气腔室207与反应腔室201之间的间隙进行密封。容易理解，进气口207c的尺寸应不小于排气口202的尺寸，以保证反应腔室201的密封。
在抽气腔室207内，且位于出气口207b的下方设置有锥状环207a，该锥状环207a的下端口小于上端口，换言之，该锥状环207a的环孔为锥形孔，且该锥形孔的孔径由上而下逐渐减小，从而使锥状环207a形 成“漏斗”结构。而且，锥状环207a将抽气腔室207分隔为上腔室和下腔室，即，锥状环207a将抽气腔室207分隔形成上、下两个空间，并且上腔室和下腔室通过锥状环207a的环孔(锥形孔)相连通。
在对反应腔室201进行排气时，自反应腔室201排出的气体进入抽气腔室207后，其中的大部分气体从上腔室通过，并由抽气系统从抽气腔室的出气口207b抽出，在此过程中，气流携带的部分副产物颗粒会经锥状环207a的环孔掉落至下腔室内积存。
图4为本发明实施例提供的半导体加工设备的气流仿真图。由图4可以看出，气流在经过锥状环207a倾斜的内壁面时不会出现涡流和反弹流，这是由于锥状环207a采用下端口小于上端口的类似“漏斗”结构，其内壁面在上腔室的底部形成倾斜的壁面，该倾斜的壁面与现有技术中抽气腔室由垂直侧壁形成的直角角落相比，不仅可以使流经上腔室的气流更顺畅地流动至抽气腔室的出气口207b，而且可以使气流更有效地携带副产物颗粒自该出气口207b排出，从而可以减少气流中所携带的部分副产物颗粒的积存。
此外，由图4还可以看出，气流在流经锥状环207a的环孔内时的流速最慢，这使得气流在流经环孔时会有一部分副产物颗粒通过该环孔掉落至下腔室，并且附着在上腔室内壁上的副产物颗粒在集结成较大的颗粒后也会在重力的作用下沿环孔倾斜的壁面进入下腔室。而且，由于气流在下腔室的直角角落会产生小涡流，这会将下腔室内的副产物颗粒携带至下腔室的边缘，从而可以使积存在下腔室内的副产物颗粒很难再被气流扬起，进而可以避免副产物颗粒返回反应腔室。
优选的，在锥状环207a的底部还设置有柱状环207d，柱状环207d的环孔与锥状环207a的环孔相连通，且柱状环207d的端口尺寸与锥状环的下端口尺寸相适配。借助柱状环207d，可以进一步阻挡副产物颗粒从下腔室向上逸出，从而可以加强对副产物颗粒上扬的抑制作用。
在本实施例中，抽气腔室还包括颗粒储存槽210，颗粒储存槽210采用可拆卸的方式设置在下腔室的下方，并与下腔室连通，用于储存进入下腔室内的副产物颗粒。这种情况下，下腔室为无底壁的筒状结构且其中设置有锥状环207a，颗粒储存槽210的底壁即为该抽气腔室的底壁。并且，可拆卸的方式可以为：采用诸如螺栓、螺钉、销、铆钉等的紧固件连接方式或卡接方式将颗粒储存槽210固定在下腔室的下方。其中，螺栓可以为螺柱208和螺母209。
并且，在颗粒储存槽210与下腔室之间设置有密封圈211，用于对颗粒储存槽210与下腔室之间的间隙进行密封。容易理解，颗粒储存槽210可视为下腔室的底盖，且该底盖可以与下腔室可拆卸地连接。这样，在需要清理下腔室内积存的副产物颗粒时，只需将颗粒储存槽210拆卸下来即可，从而给副产物颗粒的清理带来了方便。
在本实施例中，在颗粒储存槽210的侧壁内设置有沿其周向环绕的颗粒储存槽210的环状通道210b，换言之，环状通道210b环绕在颗粒储存槽210的内部空间的外围。这样，在进行化学气相沉积、等离子体刻蚀等的半导体工艺的情况下，当反应温度较高导致自反应腔室排出的气体的温度也很高时，副产物颗粒很难从气流中分离出来，此时，通过向环状通道210b内通入冷却水来冷却颗粒储存槽210，并间接降低下腔室的内部温度，从而有利于冷却进入下腔室内的高温气流，这样，不仅可以提高副产物颗粒的积存效率，而且还可以进一步抑制副产物颗粒从下腔室逸出。
在本实施例中，采用循环供水的方式向环状通道210b内通入冷却水，具体地，在环状通道210b上分别设置有进水口210a和出水口210c，而且，半导体加工设备还包括冷却水源(图中未示出)，该冷却水源利用其进水接口用于经由环状通道210b的进水口210a向环状通道210b内通入冷却水，并利用冷却水源的回水接口经由环状通道210b的出水 口210c回收环状通道210b内的冷却水，从而实现冷却水在环形通道210b内循环流动。容易理解，进水口210a和出水口210c在环状通道210b上的位置不同，且应保证冷却水能够流经环状通道210b中的各个位置。
优选的，排气口202设置在反应腔室201底部的中心位置，以能够获得对称且均匀的抽气气流，从而可以提高反应腔室201的工艺稳定性。
优选的，为了进一步获得对称且均匀的抽气气流，在反应腔室201顶部的中心位置处设置有进气口203，用以向反应腔室201的内部均匀地输送工艺气体，而使所输送工艺气体不影响反应腔室201内的气体的均匀性。在进行工艺的过程中，工艺气体自进气口203流入反应腔室201内，并作用于设置在承载装置204上的被加工工件205；反应后的废气携带副产物颗粒向下流动，并自排气口202流入抽气腔室207，然后由抽气系统抽出。
当然，在实际应用中，反应腔室的进气口和排气口还可以根据具体情况设置在腔室侧部等的其他任意位置处，而并不局限于本实施例中的腔室顶部和底部，优选地，使其保证进气和排气的均匀性。
需要说明的是，在本实施例中，抽气腔室207内的气体是由抽气系统经由出气口207b抽出，但是本发明并不局限于此，在实际应用中，也可以省去抽气系统，而仅依靠气流经由抽气腔室的出气口207b自然排出。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (10)

  1. 一种半导体加工设备，其包括反应腔室和设置在所述反应腔室底部的抽气腔室，其中，在所述反应腔室的底部设置有排气口，且对应地在所述抽气腔室的顶部设置有进气口，所述进气口与所述排气口连接；并且，在所述抽气腔室的侧壁上设置有出气口，用以排出所述抽气腔室内的气体，其特征在于，在所述抽气腔室内，且位于所述出气口的下方设置有呈漏斗状的锥状环，所述锥状环的下端口小于上端口；
    所述锥状环用于将所述抽气腔室分隔为上腔室和下腔室，所述上腔室和下腔室通过所述锥状环的环孔相连通。
  2. 根据权利要求1所述的半导体加工设备，其特征在于，所述抽气腔室还包括颗粒储存槽，所述颗粒储存槽采用可拆卸的方式设置在所述下腔室的底部，用于储存进入所述下腔室内的副产物颗粒；并且
    在所述颗粒储存槽与所述下腔室之间设置有密封圈，用于对二者之间的间隙进行密封。
  3. 根据权利要求2所述的半导体加工设备，其特征在于，在所述颗粒储存槽的侧壁内设置有环状通道，所述环状通道沿周向环绕所述颗粒储存槽而设置，且用于容纳冷却水。
  4. 根据权利要求3所述的半导体加工设备，其特征在于，在所述环状通道上分别设置有进水口和出水口，并且
    所述半导体加工设备还包括冷却水源，所述冷却水源用于经由所述进水口向所述环状通道内通入冷却水，并经由所述出水口回收所述环状通道内的冷却水。
  5. 根据权利要求2所述的半导体加工设备，其特征在于，所述颗粒储存槽采用紧固件连接方式或卡接方式固定在所述下腔室的下方。
  6. 根据权利要求1所述的半导体加工设备，其特征在于，在所述锥状环的底部还设置有柱状环，所述柱状环的环孔与所述锥状环的环孔相连通，且所述柱状环的端口尺寸与所述锥状环的下端口尺寸相适配。
  7. 根据权利要求1所述的半导体加工设备，其特征在于，在所述抽气腔室与所述反应腔室之间设置有密封圈，用于对二者之间的间隙进行密封。
  8. 根据权利要求1所述的半导体加工设备，其特征在于，所述反应腔室的排气口位于所述反应腔室底部的中心位置处。
  9. 根据权利要求8所述的半导体加工设备，其特征在于，所述反应腔室的进气口设置在所述反应腔室顶部的中心位置处，用以均匀地向所述反应腔室的内部输送工艺气体。
  10. 根据权利要求1所述的半导体加工设备，其特征在于，所述半导体加工设备还包括抽气系统，所述抽气系统连接所述抽气腔室的出气口，用于向外抽取所述抽气腔室内的气体。
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