WO2015145486A1 - Dispositif de traitement par plasma et procédé de traitement par plasma - Google Patents

Dispositif de traitement par plasma et procédé de traitement par plasma Download PDF

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Publication number
WO2015145486A1
WO2015145486A1 PCT/JP2014/001821 JP2014001821W WO2015145486A1 WO 2015145486 A1 WO2015145486 A1 WO 2015145486A1 JP 2014001821 W JP2014001821 W JP 2014001821W WO 2015145486 A1 WO2015145486 A1 WO 2015145486A1
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magnetic field
plasma
confinement region
plasma processing
substrate
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PCT/JP2014/001821
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English (en)
Japanese (ja)
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後藤　哲也
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国立大学法人東北大学
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Priority to JP2015516943A priority Critical patent/JP5909807B2/ja
Priority to PCT/JP2014/001821 priority patent/WO2015145486A1/fr
Publication of WO2015145486A1 publication Critical patent/WO2015145486A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0047—Activation or excitation of reactive gases outside the coating chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/357—Microwaves, e.g. electron cyclotron resonance enhanced sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Definitions

  • the present invention relates to a plasma processing apparatus and a plasma processing method.
  • the thin film formation process using plasma in semiconductor manufacturing and the like can easily generate various active species rich in reactivity by plasma. Therefore, using these active species, high-quality thin films can be formed without increasing the substrate temperature. Formation is possible (for example, refer patent document 1).
  • ions generated in the plasma may be accelerated by the plasma potential and collide with a substrate such as a wafer to cause damage.
  • the substrate to be processed may be contaminated. If the substrate is moved away from the plasma in order to reduce the damage to the substrate due to the plasma, the active species are deactivated, making it difficult to form a high-quality thin film.
  • An object of the present invention is to provide a plasma processing apparatus and method capable of forming a high-quality thin film while significantly suppressing damage of the substrate due to collision of ions generated in the plasma and contamination of the substrate due to sputtering of the inner wall of the processing chamber. Is to provide.
  • the plasma generator of the present invention has a mirror magnetic field forming mechanism for forming a mirror magnetic field and a microwave supply mechanism for supplying a microwave, and generates plasma by electron cyclotron resonance using the mirror magnetic field and the microwave. And a plasma processing apparatus for confining the plasma in a predetermined confinement region by the mirror magnetic field, A holding mechanism that arranges the substrate so as to face the confinement region in a direction crossing a magnetic field line passing through the confinement region so that neutral radicals activated from the confinement region selectively reach the substrate to be processed. It is characterized by having.
  • the plasma processing method of the present invention generates plasma by electron cyclotron resonance using a mirror magnetic field and a microwave, and confine the plasma in a predetermined confinement region by the mirror magnetic field, Placing the substrate opposite the confinement region in a direction across a magnetic field line passing through the confinement region so that neutral radicals activated from the confinement region selectively reach the substrate to be treated. It is characterized by.
  • the substrate is opposed to the confinement region in a direction crossing the magnetic field lines passing through the confinement region so that the neutral radicals activated from the confinement region of the plasma selectively reach the substrate to be treated.
  • the ion irradiation from the plasma can be reduced as much as possible, and the irradiation of the active species (neutral radicals) to the substrate can be maximized.
  • FIG. 1 is a cross-sectional view schematically showing a film forming apparatus according to an embodiment of a plasma processing apparatus of the present invention.
  • the graph which shows an example of distribution of the magnetic field intensity on the axis line of a mirror magnetic field.
  • the top view which shows the structure of the division ring for electric potential adjustment.
  • Sectional drawing which shows the outline of the sputtering device which concerns on other embodiment of the plasma processing apparatus of this invention.
  • FIG. 1 shows a film forming apparatus 1 using plasma generation by electron cyclotron resonance (ECR).
  • ECR electron cyclotron resonance
  • the processing chamber 10 is made of a conductive material such as aluminum alloy or stainless steel, and is connected to a reference potential.
  • a top plate 11 is provided above the processing chamber 10, and a supply device 12 that supplies N 2 gas and a supply device 13 that supplies material gas G are provided.
  • a stage 50 that holds the wafer W is provided at the bottom of the processing chamber 10.
  • the processing chamber 10 is provided with an exhaust port for exhausting the atmosphere in the processing chamber 10, and an exhaust device such as a vacuum pump (not shown) installed outside the processing chamber 10 at the exhaust port. Is connected. The inside of the processing chamber 10 is depressurized by this exhaust device.
  • an exhaust device such as a vacuum pump (not shown) installed outside the processing chamber 10 at the exhaust port. Is connected. The inside of the processing chamber 10 is depressurized by this exhaust device.
  • a cylindrical member 18A for defining the plasma generation chamber 17A is installed on one side wall of the processing chamber 10 so as to communicate with the processing chamber 10, and the other side wall of the processing chamber 10 faces the plasma generation chamber 17A.
  • a cylindrical member 18B for defining the opposed end chamber 17B is installed so as to communicate with the processing chamber 10.
  • the central axes of the plasma generation chamber 17A and the opposed end chamber 17B coincide with the axis AX extending in the horizontal direction.
  • the outer end of the cylindrical member 18B on the left side of the drawing is sealed with a plate 19.
  • a waveguide 15 is connected to the outer end of the cylindrical member 18A on the right side of the drawing, and a microwave formed of a dielectric material such as aluminum oxide is provided between the cylindrical member 18A and the waveguide 15.
  • An incident window 16 for MW is provided.
  • Current coils 30A and 30B for forming a mirror magnetic field are provided on the outer peripheral sides of the cylindrical members 18A and 18B.
  • Limiter members 20A and 20B made of a plate having a circular opening and for defining a region where the plasma PL exists in the processing chamber 10 are installed at the ends of the cylindrical members 18A and 18B on the processing chamber 10 side. ing.
  • the limiter members 20A and 20B are arranged in contrast with respect to an intermediate position M2 between the cylindrical member 18A and the cylindrical member 18B.
  • a potential adjusting split ring 40 having an axis AX as a central axis is provided in the facing end chamber 17B. As shown in FIG. 5, the potential adjusting split ring 40 includes a disk-shaped electrode 41 and ring-shaped electrodes 42 and 43 disposed concentrically on the outside thereof.
  • the current I 0 is passed through the two current coils 30A and 30B in the same direction to form the mirror magnetic field MF.
  • a microwave MW is supplied through the waveguide 15 to generate plasma.
  • a 2.45 GHz microwave undergoes cyclotron resonance with electrons at a magnetic field intensity of 875 gauss, and a plasma PL is generated in the vicinity of the resonance point RP.
  • Various conditions are set so that the resonance point RP is arranged in the plasma generation chamber 17A.
  • the plasma PL generated near the resonance point RP is constrained by the magnetic field lines ML of the mirror magnetic field MF, and can move freely in the direction of the magnetic field lines MFL.
  • the magnetic field intensity on the axis AX becomes maximum at the axial center positions M1A and M1B of the two current coils 30A and 30B, and at an intermediate position M2 between the position M1A and the position M1B on the axis AX.
  • the electrons constituting the plasma PL that moves along the magnetic field lines MFL bounce between the two maximum magnetic field parts (M1A, M1B) by the so-called magnetic mirror effect, so that the two maximum magnetic field parts (M1A, M1B). Trapped in between.
  • the plasma PL is accelerated from a region where the magnetic field strength of the mirror magnetic field MF is high toward a region where the magnetic field strength of the mirror magnetic field MF is low, but decelerates as the magnetic field strength increases and eventually reaches the maximum magnetic field portion. When it approaches (M1A, M1B), it bounces back. For this reason, the plasma PL is confined in a predetermined confinement region PCR.
  • neutral radicals activated from the confinement region PCR selectively reach the wafer W to be processed in the directions D1 and D2 across the magnetic field lines MFL passing through the confinement region PCR. As described above, the wafer W is arranged to face the confinement region PCR.
  • the wafer W is disposed below the position M2.
  • the distance L between the surface of the wafer W shown in FIG. 2 and the extension (maximum outer periphery position) of the confinement region PCR is activated from the confinement region PCR in a state where charged particles in the plasma PL are confined in the confinement region PCR. Only sex radicals are set to reach the wafer W to be processed without losing activity. This makes it possible to maximize irradiation of neutral active species to the wafer W while greatly reducing ion irradiation from the plasma to the wafer W.
  • the role of the limiter members 20A and 20B will be described. If the position of the extension of the confinement region PCR is uncertain, charged particles may enter the wafer W. Since the charged particles are constrained by the lines of magnetic force, the extension of the moving trajectory of the moving plasma is defined by the position of the edge of the opening of the limiter members 20A and 20B. That is, by installing the limiter members 20A and 20B, the extension of the confinement region PCR can be controlled more precisely.
  • the material for forming the limiter members 20A and 20B is not particularly limited, but the plasma generated in the plasma generation chamber 17A collides with the limiter members 20A and 20B, and the material for forming the limiter members 20A and 20B is sputtered.
  • the limiter members 20A and 20B may be formed of a material containing the forming material of the wafer W, for example, a material containing silicon or the like.
  • the role of the potential adjusting split ring 40 will be described.
  • a potential gradient is formed in the radial direction centering on the axis AX (direction orthogonal to the axis AX), and the plasma PL confined in the confinement region PCR may easily diffuse in the radial direction.
  • the electrode 41 positioned at the center of the potential adjusting split ring 40 is connected to a negative potential
  • the electrode 42 is connected to a reference potential
  • the electrode 43 disposed on the outermost periphery is connected to a positive potential.
  • the film forming apparatus of this embodiment is an apparatus that performs an ALD (Atomic Layer Deposition) process using mirror magnetic field confined plasma.
  • ALD Atomic Layer Deposition
  • AlN aluminum nitride
  • a current of 360 A was passed through the current coils 30A and 30B to generate a magnetic field of 1500 gauss at the maximum magnetic field part (M1A, M1B) and 300 gauss at the mirror magnetic field central part (M2).
  • TMA trimethylaluminum
  • Al (CH) 3 hereinafter referred to as TMA
  • TMA trimethylaluminum
  • the pressure in the processing chamber 10 was 1 Torr.
  • N 2 gas was flowed at 500 sccm for 1 minute at a pressure of 1 Torr in the processing chamber 10 to remove TMA components remaining without being adsorbed in the processing chamber 10.
  • N 2 flowing at 500 sccm the pressure was set to 3 mTorr, a 2.45 GHz microwave MW was introduced into the processing chamber 10, and nitrogen plasma was excited by electron cyclotron resonance for 90 seconds.
  • the microwave power was 600W.
  • N2 + ions, N + ions, and electrons are confined in the mirror magnetic field and hardly reach the wafer W.
  • neutral and active N atom radicals generated in the nitrogen plasma reach the wafer W and react with the adsorbed TMA.
  • the CH group was volatilized by CN gas, HN gas, etc., and an aluminum nitride AlN thin film was formed on the surface.
  • An aluminum nitride thin film of about 20 nm could be formed by repeating 200 cycles from introduction of TMA to N 2 plasma treatment.
  • the present invention it is possible to reduce ion bombardment damage as compared with ordinary plasma treatment, and to form a high-quality aluminum nitride thin film with high breakdown voltage and low leakage current.
  • the present invention is not limited to the aluminum nitride shown in this embodiment, and various nitride films can be formed using an organometallic gas usually used in ALD.
  • the plasma excitation gas is not N 2 , but may be NH 3 , for example, or a rare gas may be mixed.
  • the plasma excitation gas containing oxygen and San ⁇ , O 2 gas, or by a plasma O 2 gas and a rare gas it is possible to form an oxide film.
  • FIG. 6 shows a sputtering apparatus according to another embodiment of the plasma processing apparatus of the present invention.
  • This sputtering apparatus applies mirror magnetic field confined plasma to a sputtering process.
  • a top plate 111 of the processing chamber 10 is provided with a target TG as a magnetron sputtering source held on the lower surface of the backing plate 122.
  • a DC power source 200 is connected to the target TG via a backing plate 122.
  • a supply device 113 for introducing Ar gas or N 2 gas into the processing chamber 10 is provided on the side wall of the processing chamber 10.
  • a magnetron sputtering source is mounted on the processing chamber 10.
  • a target TG made of metal hafnium (Hf) is bonded to the backing plate 122.
  • a permanent magnet (not shown) was installed in the backing plate 122, and a horizontal magnetic field parallel to the surface of the 500 gauss target TG was formed on the surface of the target TG.
  • N 2 gas was introduced into the processing chamber 10, the pressure was set to 5 mTorr, DC power of 300 W was applied to the target TG for 3 seconds, and an HfN thin film having a thickness of about 1 nm was formed on the wafer W by reactive sputtering.
  • ions from magnetron plasma are irradiated to the film formation surface, and damage is induced in the film.
  • 600 W of 2.45 GHz microwave MW was input to the mirror magnetic field part to excite nitrogen plasma.
  • the Hf thin film was nitrided.
  • the ion impact damage to the film formation surface is sufficiently smaller than that during sputtering film formation. Therefore, in this nitriding process, damaged parts such as dangling bonds generated during sputtering film formation are nitrided to reduce damage. Is possible.
  • a high-quality HfN thin film with high withstand voltage and low leakage current can be formed 20 times with one cycle from Hf deposition to nitridation.
  • the sputter film formation and the mirror magnetic field plasma process are alternately performed.
  • the sputter film formation and the mirror magnetic field plasma process can be performed simultaneously as compared with a simple reactive sputter process. It was found that damage in the film can be reduced.
  • the confinement region PCR has the maximum diameter at the position M2 and has been described as an example in which the diameter decreases toward the current coils 30A and 30B.
  • the present invention is not limited to this.
  • a magnetic field for correcting the shape of the confinement region PCR can be formed, and the shape of the confinement region PCR can be changed according to the shape and size of the substrate to be processed.
  • the wafer W is described as an example of the substrate to be processed, but the present invention can be applied to various substrates such as a glass substrate for a large screen display.
  • the potential adjusting split ring 40 is taken as an example of the potential adjusting member.
  • the present invention is not limited to this, and any means that can adjust the plasma potential gradient in the confinement region PCR can be used. is there.
  • the current coil is used to form the mirror magnetic field, but a permanent magnet may be used instead.
  • the stage 50 is stationary, but it is also possible to perform processing while moving the stage 50 relative to the confinement region PCR.
  • the opposed end chamber 17B can be a plasma generation chamber.
  • a waveguide is newly connected to the opposed end chamber 17B, and an incident window is provided between the opposed end chamber 17B and the new waveguide, and microwaves are introduced through the incident window.
  • the potential adjusting split ring 40 is removed.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Formation Of Insulating Films (AREA)
  • Particle Accelerators (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　L'invention consiste à permettre la formation d'un film mince de haute qualité tout en réduisant considérablement les dégâts à un substrat en raison de la collision avec celui-ci d'ions générés dans le plasma ainsi que la contamination d'un substrat par pulvérisation cathodique sur la paroi interne d'une chambre de traitement. Un plasma est généré par résonance cyclotronique des électrons à l'aide d'un champ magnétique (MF pour Magnetic Field) de miroir et d'un four à micro-ondes (MW pour MicroWave), le plasma (PL) est isolé dans une région fermée prescrite (PCR pour Prescribed Closed Region) par le champ magnétique (MF) de miroir et une plaquette (W) est agencée à l'opposé de la région fermée (PCR) dans une direction (D1, D2) coupant les lignes de la force magnétique passant à travers la région fermée (PCR) de telle sorte que des radicaux neutres activés atteignent la de manière sélective la plaquette (W) qui doit être traitée à partir de la région fermée (PCR).
PCT/JP2014/001821 2014-03-28 2014-03-28 Dispositif de traitement par plasma et procédé de traitement par plasma WO2015145486A1 (fr)

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Cited By (4)

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Publication number Priority date Publication date Assignee Title
FR3042797A1 (fr) * 2015-10-27 2017-04-28 Commissariat Energie Atomique Dispositif pour la fabrication d'une couche en carbone amorphe par plasma a la resonance cyclotron electronique
JP2020045520A (ja) * 2018-09-19 2020-03-26 トヨタ自動車株式会社 プラズマｃｖｄ装置
EP3710614A1 (fr) * 2017-11-17 2020-09-23 Centre National de la Recherche Scientifique Réacteur de dépôt de couches et procédé de dépôt associé
WO2021090794A1 (fr) * 2019-11-06 2021-05-14 株式会社クリエイティブコーティングス Procédé de formation de film et dispositif de formation de film

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CN106304603A (zh) * 2016-09-27 2017-01-04 中国科学院合肥物质科学研究院 一种中性束注入器离子源场反向位形等离子体射频驱动器

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FR3042797A1 (fr) * 2015-10-27 2017-04-28 Commissariat Energie Atomique Dispositif pour la fabrication d'une couche en carbone amorphe par plasma a la resonance cyclotron electronique
WO2017072434A1 (fr) * 2015-10-27 2017-05-04 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif pour la fabrication d'une couche en carbone amorphe par plasma a la resonance cyclotron electronique
US11075061B2 (en) 2015-10-27 2021-07-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Device for producing an amorphous carbon layer by electron cyclotron resonance plasma
EP3710614A1 (fr) * 2017-11-17 2020-09-23 Centre National de la Recherche Scientifique Réacteur de dépôt de couches et procédé de dépôt associé
JP2020045520A (ja) * 2018-09-19 2020-03-26 トヨタ自動車株式会社 プラズマｃｖｄ装置
WO2021090794A1 (fr) * 2019-11-06 2021-05-14 株式会社クリエイティブコーティングス Procédé de formation de film et dispositif de formation de film
JPWO2021090794A1 (fr) * 2019-11-06 2021-05-14
JP7112793B2 (ja) 2019-11-06 2022-08-04 株式会社クリエイティブコーティングス 成膜方法及び成膜装置

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