WO2015133374A1 - 有機薄膜トランジスタ - Google Patents
有機薄膜トランジスタ Download PDFInfo
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- WO2015133374A1 WO2015133374A1 PCT/JP2015/055706 JP2015055706W WO2015133374A1 WO 2015133374 A1 WO2015133374 A1 WO 2015133374A1 JP 2015055706 W JP2015055706 W JP 2015055706W WO 2015133374 A1 WO2015133374 A1 WO 2015133374A1
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- insulating layer
- gate insulating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
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- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
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- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
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- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
Definitions
- the present invention relates to an organic thin film transistor.
- a TFT has a structure including a gate electrode, a semiconductor layer, and a gate insulating layer provided between the gate electrode and the semiconductor layer on a substrate, and a source electrode and a drain electrode are provided in contact with the semiconductor layer. It has been.
- the TFT is driven by applying a voltage to the gate electrode. By applying a voltage to the gate electrode, the amount of carriers consisting of electrons or holes in the semiconductor is controlled, and the current flowing between the source electrode and the drain electrode is controlled.
- inorganic semiconductors such as amorphous or polycrystalline thin film silicon have been used for semiconductors used in TFTs.
- a vacuum process or a high-temperature process of 300 ° C. or higher is required, and improvement in productivity is limited.
- TFTs using organic semiconductors have become widespread. Since the organic semiconductor layer can be formed by a method such as ink jet, spin coating, flexographic printing, etc., the film forming process can be performed at a lower temperature, at a high speed and efficiently, and at a low cost.
- the organic semiconductor layer can increase the carrier mobility by increasing the orientation of the organic semiconductor constituting the organic semiconductor layer, and can further speed up the switching operation.
- a base layer oriented in a predetermined direction is formed on a substrate, a gate electrode is formed on the base layer, and a gate is formed so as to cover the gate electrode.
- An insulating layer is formed so that a part thereof is in contact with the base layer, the gate insulating layer is aligned along the alignment direction of the base layer, and an organic semiconductor layer is formed so as to be in contact with the gate insulating layer. It is described that the semiconductor is aligned along the alignment direction of the gate insulating layer.
- Patent Document 2 describes a field effect organic transistor in which at least one gate insulating layer is made of a liquid crystal polymer having dielectric anisotropy. With the structure of the transistor described in Patent Document 2, the orientation of the organic semiconductor formed on the gate insulating layer is controlled.
- the gate electrode is formed on a part of the underlying layer oriented in a predetermined direction, the orientation regulating power of the underlying layer is just above the gate insulating layer.
- the organic semiconductor layer cannot be aligned over the entire organic semiconductor layer formed on the gate insulating layer.
- the field effect organic transistor described in Patent Document 2 exhibits fluidity because the orientation of the gate insulating layer is not fixed, the crystal of the organic semiconductor layer formed thereon is likely to crack. , Performance is likely to deteriorate.
- the orientation of the gate insulating layer is easily lost by exposing the gate insulating layer to a temperature higher than the liquid crystal formation temperature, the field effect organic transistor described in Patent Document 2 has sufficient heat resistance. Absent.
- An object of the present invention is to provide an organic thin film transistor that exhibits excellent carrier mobility and excellent heat resistance.
- An alignment treatment is performed on the surface of the first gate insulating layer on the second gate insulating layer side
- An organic thin film transistor in which the second gate insulating layer is a layer formed by polymerizing and fixing a polymerizable liquid crystalline compound aligned along an alignment treatment in an aligned state.
- the first gate insulating layer is polyimide, polyvinylphenol, novolac resin, polystyrene, poly (meth) acrylate, epoxy resin, epoxy (meth) acrylate, polyvinyl alcohol, fluororesin, polycycloolefin, polysilsesquioxane, polysiloxane [6]
- substituents when there are a plurality of substituents, linking groups, and the like (hereinafter referred to as substituents) indicated by specific symbols, or when a plurality of substituents are specified simultaneously or alternatively, It means that a substituent etc. may mutually be same or different. The same applies to the definition of the number of substituents and the like. Further, when there are repetitions of a plurality of partial structures represented by the same indication in the formula, each partial structure or repeating unit may be the same or different. Further, unless otherwise specified, when a plurality of substituents and the like are adjacent (particularly adjacent), they may be connected to each other or condensed to form a ring.
- the term “compound” (including polymer) is used to mean not only the compound itself but also its salt and its ion. In addition, it means that a part of the structure is changed as long as the desired effect is achieved.
- a substituent that does not specify substitution / non-substitution means that the group may further have a substituent as long as a desired effect is obtained. This is also synonymous for compounds that do not specify substitution / non-substitution.
- a numerical range expressed using “to” means a range including numerical values described before and after “to” as a lower limit value and an upper limit value.
- the organic thin film transistor of the present invention exhibits excellent carrier mobility and can perform switching operation faster.
- the organic thin film transistor of the present invention is also excellent in heat resistance. Therefore, even when the organic thin film transistor is heated to a high temperature by a high voltage and a high current, the fixed alignment state of the gate insulating layer is not impaired, the switching operation is good and quick, and the performance is hardly deteriorated.
- Organic thin film transistor The form of the organic thin film transistor of the present invention (hereinafter simply referred to as “OTFT of the present invention”) will be described below.
- the OTFT of the present invention has a bottom gate configuration, and includes a substrate, a gate electrode provided on the substrate, a first gate insulating layer provided to cover the gate electrode, and a first gate insulating layer provided on the first gate insulating layer.
- FIG. 1A and 1B are longitudinal sectional views each schematically showing a typical preferred embodiment of the OTFT of the present invention.
- 1A and 1B 1 is an organic semiconductor layer, 2 is a gate insulating layer, 3 is a source electrode, 4 is a drain electrode, 5 is a gate electrode, and 6 is a substrate.
- the gate insulating layer 2 includes a first gate insulating layer 2A and a second gate insulating layer 2B.
- An alignment treatment is applied to the second gate insulating layer side surface 2a of the first gate insulating layer 2A. Along with this alignment treatment, the liquid crystalline compound that is a constituent material of the second gate insulating layer can be aligned.
- 1A shows a bottom gate / bottom contact type
- FIG. 1B shows a bottom gate / top contact type.
- an overcoat layer may be formed on the uppermost part of the OTFT (opposite side with respect to the substrate 6). The members or materials constituting the OTFT of the present invention will be described below.
- the substrate may be any substrate as long as it can support the OTFT and the display panel produced thereon.
- the substrate is not particularly limited as long as the surface is insulative, has a sheet shape, and has a flat surface.
- An inorganic material may be used as the material for the substrate.
- a substrate made of an inorganic material for example, various glass substrates such as soda lime glass and quartz glass, various glass substrates with an insulating film formed on the surface, a quartz substrate with an insulating film formed on the surface, and an insulating film on the surface Examples thereof include a silicon substrate, a sapphire substrate, a metal substrate made of various alloys such as stainless steel, aluminum, nickel, and various metals, metal foil, and paper.
- a conductive or semiconducting material such as stainless steel sheet, aluminum foil, copper foil or silicon wafer, an insulating polymer material or metal oxide is usually applied or laminated on the surface. Used.
- an organic material may be used as the material of the substrate.
- polymethyl methacrylate polymethyl methacrylate, PMMA
- polyvinyl alcohol PVA
- polyvinyl phenol PVP
- polyethersulfone PES
- polyimide polyamide
- polyacetal polycarbonate
- PC polyethylene terephthalate
- flexible plastic substrate also referred to as a plastic film or a plastic sheet
- an organic polymer exemplified by polyethylene naphthalate (PEN), polyethyl ether ketone, polyolefin, and polycycloolefin.
- PEN polyethylene naphthalate
- PEN polyethylene naphthalate
- polyethyl ether ketone polyolefin
- polycycloolefin polycycloolefin.
- the thing formed with the mica can also be mentioned. If such a flexible plastic substrate or the like is used, it is possible to incorporate or integrate the OTFT into, for example, a curved display
- the glass transition point is preferably high and the glass transition point is preferably 40 ° C. or higher.
- the coefficient of linear expansion is small from the viewpoint that the dimensional change is hardly caused by the heat treatment at the time of manufacture and the transistor performance is stable.
- a material having a linear expansion coefficient of 25 ⁇ 10 ⁇ 5 cm / cm ⁇ ° C. or less is preferable, and a material having a coefficient of 10 ⁇ 10 ⁇ 5 cm / cm ⁇ ° C. or less is more preferable.
- the organic material constituting the substrate is preferably a material having resistance to a solvent used at the time of manufacturing the OTFT, and a material having excellent adhesion to the gate insulating layer and the electrode is preferable.
- a plastic substrate made of an organic polymer having a high gas barrier property. It is also preferable to provide a dense silicon oxide film or the like on at least one surface of the substrate, or to deposit or laminate an inorganic material.
- a conductive substrate (a substrate made of a metal such as gold or aluminum, a substrate made of highly oriented graphite, a stainless steel substrate, etc.) can also be mentioned.
- a functional layer such as a buffer layer for improving adhesion and flatness, a barrier film for improving gas barrier properties, and a surface treatment layer such as an easy adhesion layer may be formed on the surface. Further, surface treatment such as corona treatment, plasma treatment, UV / ozone treatment may be performed.
- the thickness of the substrate is preferably 10 mm or less, more preferably 2 mm or less, and particularly preferably 1 mm or less. On the other hand, it is preferably 0.01 mm or more, and more preferably 0.05 mm or more. In particular, in the case of a plastic substrate, the thickness is preferably about 0.05 to 0.1 mm. In the case of a substrate made of an inorganic material, the thickness is preferably about 0.1 to 10 mm.
- a conductive material (also referred to as an electrode material) constituting the gate electrode is not particularly limited.
- metals such as platinum, gold, silver, aluminum, chromium, nickel, copper, molybdenum, titanium, magnesium, calcium, barium, sodium, palladium, iron, manganese; InO 2 , SnO 2 , indium / tin oxide (ITO ), Conductive metal oxides such as fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO); polyaniline, polypyrrole, polythiophene, polyacetylene, poly (3,4-ethylenedioxy) Conductive polymers such as thiophene) / polystyrene sulfonic acid (PEDOT / PSS); acids such as hydrochloric acid, sulfuric acid, s
- the method of forming the gate electrode there is no limitation on the method of forming the gate electrode.
- a film formed by physical vapor deposition (PVD) such as vacuum vapor deposition, chemical vapor deposition (CVD), sputtering, printing (coating), transfer, sol-gel, or plating is necessary.
- PVD physical vapor deposition
- CVD chemical vapor deposition
- sputtering sputtering
- printing coating
- sol-gel sol-gel
- plating sol-gel
- a solution, paste, or dispersion of the above material can be prepared and applied, and a film can be formed or an electrode can be directly formed by drying, baking, photocuring, aging, or the like.
- patterning can be performed in combination with the following photolithography method or the like.
- Examples of the photolithography method include a method in which a patterning of a photoresist is combined with etching such as wet etching with an etchant or dry etching with reactive plasma, a lift-off method, or the like.
- etching such as wet etching with an etchant or dry etching with reactive plasma, a lift-off method, or the like.
- a method of irradiating the material with an energy beam such as a laser or an electron beam to polish the material or changing the conductivity of the material may be used.
- substrate is also mentioned.
- the thickness of the gate electrode is arbitrary, but is preferably 1 nm or more, particularly preferably 10 nm or more. Moreover, 500 nm or less is preferable and 200 nm or less is especially preferable.
- the first gate insulating layer is not particularly limited as long as it is an insulating layer, and may be a single layer or a multilayer.
- the first gate insulating layer is preferably formed of an insulating material, and preferable examples of the insulating material include organic polymers and inorganic oxides.
- the organic polymer and the inorganic oxide are not particularly limited as long as they have insulating properties, and those that can form a thin film, for example, a thin film having a thickness of 1 ⁇ m or less are preferable.
- Each of the organic polymer and the inorganic oxide may be used alone or in combination of two or more, or the organic polymer and the inorganic oxide may be used in combination.
- polyvinyl phenol polystyrene (PS), poly (meth) acrylate represented by polymethylmethacrylate, polyvinyl alcohol, polyvinyl chloride (PVC), polyfluorination Represented by vinylidene (PVDF), polytetrafluoroethylene (PTFE), cyclic fluoroalkyl polymers represented by CYTOP, polycycloolefin, polyester, polyethersulfone, polyetherketone, polyimide, epoxy resin, polydimethylsiloxane (PDMS) And polyorganosiloxane, polysilsesquioxane, butadiene rubber and the like.
- thermosetting resins such as phenol resin, novolac resin, cinnamate resin, acrylic resin, and polyparaxylylene resin are also included.
- the organic polymer can be used in combination with a compound having a reactive substituent such as an alkoxysilyl group, a vinyl group, an acryloyloxy group, an epoxy group, or a methylol group.
- the organic polymer is preferably cross-linked and cured for the purpose of increasing the solvent resistance and insulation resistance of the first gate insulating layer.
- Crosslinking is preferably performed by generating an acid or radical using light, heat or both.
- radical generator that generates radicals by light or heat
- thermal polymerization initiators (H1) described in [0182] to [0186] of JP2013-214649A and photopolymerization initiation Agent (H2) photo radical generators described in JP-A-2011-186069, [0046] to [0051], photo-radical polymerization initiation described in JP-A 2010-285518, [0042] to [0056]
- An agent or the like can be suitably used, and the contents thereof are preferably incorporated in the present specification.
- “Number average molecular weight (Mn) is 140 to 5,000, described in JP2013-214649A [0167] to [0177], has a crosslinkable functional group, and does not have a fluorine atom. It is also preferred to use "compound (G)", the contents of which are preferably incorporated herein.
- a photoacid generator that generates an acid by light
- a photocationic polymerization initiator described in [0033] to [0034] of JP2010-285518A, JP2012-163946A
- the acid generators described in [0120] to [0136] of the publication, particularly sulfonium salts, iodonium salts, and the like can be preferably used, and the contents thereof are preferably incorporated herein.
- thermal acid generator that generates an acid by heat
- thermal cationic polymerization initiators described in JP-A 2010-285518, [0035] to [0038], particularly onium salts, and JP-A 2005
- the catalysts described in [0034] to [0035] of Japanese Patent No. 354012 can be preferably used, particularly sulfonic acids and sulfonic acid amine salts, and the contents thereof are preferably incorporated herein.
- crosslinking agents described in JP-A-2005-354012 [0032] to [0033] particularly bifunctional or higher epoxy compounds, oxetane compounds, JP-A 2006-303465, [0046] to [0062].
- the first gate insulating layer is polyimide, polyvinylphenol, novolac resin, polystyrene, poly (meth) acrylate, epoxy resin, epoxy (meth) acrylate, polyvinyl alcohol, fluororesin, polycycloolefin, polysilsesquioxy. It contains an organic polymer selected from sun, polysiloxane, polyester, polyethersulfone, and polyetherketone, and more preferably formed from these organic polymers.
- fluororesin polyvinylidene fluoride or polytetrafluoroethylene is preferable.
- dialkyl polysiloxane is preferable and polydimethylsiloxane is more preferable.
- the organic polymer contained in the first gate insulating layer may form a crosslinked structure as described above. Moreover, the form of the copolymer which uses the structural component of the said organic polymer (polymer) as a structural unit may be sufficient.
- Examples of the method of forming the first gate insulating layer with an organic polymer include a method of coating and curing the organic polymer.
- the coating method is not particularly limited, and includes the above printing methods. Of these, a wet coating method such as a micro gravure coating method, a dip coating method, a screen coating printing, a die coating method or a spin coating method is preferable.
- the inorganic oxide is not particularly limited.
- silicon oxide in addition to silicon oxide (SiO X ), BPSG, PSG, BSG, AsSG, PbSG, silicon oxynitride (SiON), SOG (spin on glass), low dielectric constant SiO 2 based material (for example, , Polyaryl ether, cycloperfluorocarbon polymer and benzocyclobutene, cyclic fluororesin, polytetrafluoroethylene, fluorinated aryl ether, fluorinated polyimide, amorphous carbon, organic SOG).
- SiO 2 based material for example, Polyaryl ether, cycloperfluorocarbon polymer and benzocyclobutene, cyclic fluororesin, polytetrafluoroethylene, fluorinated aryl ether, fluorinated polyimide, amorphous carbon, organic SOG).
- a vacuum film formation method such as a vacuum deposition method, a sputtering method, an ion plating method, a CVD method, or the like can be used.
- Assist may be performed with a plasma using gas, an ion gun, a radical gun, or the like.
- precursors corresponding to the respective metal oxides specifically metal halides such as chlorides and bromides, metal alkoxides, metal hydroxides, and the like, such as acids such as hydrochloric acid, sulfuric acid and nitric acid in alcohol and water
- acids such as hydrochloric acid, sulfuric acid and nitric acid in alcohol and water
- bases such as sodium hydroxide and potassium hydroxide
- the first gate insulating layer can also be provided by a method in which any one of the lift-off method, the sol-gel method, the electrodeposition method, and the shadow mask method is combined with the patterning method as necessary. .
- the first gate insulating layer may be subjected to surface treatment such as corona treatment, plasma treatment, UV / ozone treatment.
- the first gate insulating layer is subjected to orientation treatment on the surface of the second gate insulating layer side.
- orientation processing There is no restriction
- the alignment treatment can be performed by accumulating (for example, ⁇ -tricosanoic acid, methyl stearylate).
- an orientation process is performed by applying an electric field or a magnetic field to the organic compound constituting the surface of the first insulating layer, or irradiating the organic compound constituting the surface of the first insulating layer with light (linearly polarized light irradiation or non-polarized light irradiation).
- You can also.
- the rubbing treatment can be generally performed by rubbing the surface of the polymer layer several times in a certain direction with paper or cloth.
- rubbing treatment is preferably performed by the method described in “Liquid Crystal Handbook” (Publisher: Maruzen Co., Ltd., issued on October 30, 2000, p226-229).
- a polymerizable liquid crystal compound as a material for the second gate insulating layer described later is aligned along the alignment process. be able to.
- the second gate insulating layer is formed by using one or more polymerizable (having a polymerizable group) liquid crystalline compound.
- the second gate insulating layer is a layer formed by polymerizing a polymerizable liquid crystalline compound aligned along the alignment treatment applied to the surface of the first gate insulating layer while maintaining the alignment state. By this polymerization reaction, the alignment state of the liquid crystal compound is fixed (that is, polymerized and fixed).
- immobilizing a liquid crystalline compound in an aligned state means that the alignment of the polymerizable liquid crystalline compound is stably maintained by a polymerization reaction.
- the liquid crystalline compound that has been polymerized and fixed usually does not exhibit fluidity in the temperature range of 0 ° C. to 100 ° C., and even when an external field or external force is applied, The fixed orientation form can be kept stable.
- the polymerizable liquid crystalline compound is polymerized and fixed in the aligned state, it no longer exhibits liquid crystallinity.
- the polymerizable liquid crystalline compound has a structure in which a polymerizable group is introduced into the liquid crystalline compound.
- the polymerizable group is not particularly limited, and means, for example, an ethylenically unsaturated group (that is, a group having an ethylene bond (carbon-carbon double bond) consumed in measurement of bromine value and iodine value).
- a cyclic ether group such as an epoxy group or an oxetane group can be widely used.
- the ethylenically unsaturated group is preferably introduced as an acryloyl group, a methacryloyl group, an acrylamide group, a vinyl group, a styryl group or the like.
- the polymerizable liquid crystalline compound used in the present invention may be a discotic liquid crystalline compound (also referred to as a discotic liquid crystalline compound) or a rod-shaped liquid crystalline compound.
- a polymerizable discotic liquid crystalline compound can be used for forming the second gate insulating layer.
- a compound in which a polymerizable group is introduced into a conventionally known discotic liquid crystalline compound can be used.
- Discotic liquid crystalline compounds are disclosed in various literatures (C. Destrade et al., Mol. Crysr. Liq. Cryst., Vol. 71, page 111 (1981); edited by The Chemical Society of Japan, Quarterly Chemical Review, No. 22, Liquid Crystal). Chemistry, Chapter 5, Chapter 10 Section 2 (1994); B. Kohne et al., Angew. Chem. Soc. Chem.
- Type discotic liquid crystal compound) in which X is a group having a polymerizable group Of the compounds described in JP-A 2007-108732, paragraphs [0062] to [0067], those having a polymerizable group as a substituent are also disclosed as discotic liquid crystalline compounds having a polymerizable group. Can be suitably used.
- a polymerizable rod-like liquid crystalline compound can also be used as the polymerizable liquid crystalline compound for forming the second gate insulating layer.
- a compound in which a polymerizable group is introduced into a conventionally known rod-like liquid crystal compound can be used.
- rod-like liquid crystalline compounds examples include azomethines, azoxys, cyanobiphenyls, cyanophenyl esters, benzoic acid esters, cyclohexanecarboxylic acid phenyl esters, cyanophenylcyclohexanes, cyano-substituted phenylpyrimidines, alkoxy-substituted phenylpyrimidines.
- Phenyldioxanes, tolanes and alkenylcyclohexylbenzonitriles are preferably used.
- the number of polymerizable groups in one molecule is preferably 1 to 6, more preferably 1 to 3.
- Examples of the polymerizable rod-like liquid crystal compound include those described in Makromol. Chem. 190, 2255 (1989), Advanced Materials 5, 107 (1993), US Pat. Nos. 4,683,327, 5,622,648 and 5,770,107, International Publication No. 95/22586. No. 95/24455, No. 97/00600, No. 98/23580, No. 98/52905, JP-A-1-272551, JP-A-6-16616, and JP-A-7-110469. In addition, the compounds described in JP-A-11-80081 and JP-A-2001-328773 can be used.
- the polymerizable liquid crystalline compound has a molecular alignment direction of vertical alignment, horizontal alignment, and tilt alignment at least on the surface of the first gate insulating layer on the side where the organic semiconductor layer is formed. It is preferable that this alignment state is fixed by a polymerization reaction (that is, the alignment direction of the liquid crystal compound fixed by polymerization is vertical on the surface of the second gate insulating layer of the OTFT on the organic semiconductor side). Preferred is orientation, horizontal orientation, or tilted orientation).
- the alignment direction of the polymerization-fixed liquid crystalline compound may be the same or different from the first insulating layer side surface to the organic semiconductor layer side surface.
- the alignment direction of the liquid crystal compound fixed by polymerization between the first insulating layer side and the organic semiconductor layer side of the second gate insulating layer is the same.
- the polymerizable liquid crystal compound or the polymerized and fixed liquid crystal compound is “perpendicularly aligned” means that the polymerizable liquid crystal compound or the polymerized liquid crystal compound is the second gate insulating layer. It means that the film is oriented at an average inclination angle in the range of 80 to 90 degrees with respect to the surface of the organic semiconductor layer.
- the polymerizable liquid crystal compound or the polymerized liquid crystal compound is “horizontal aligned” means that the polymerizable liquid crystal compound or the polymerized liquid crystal compound is in the second gate insulating layer. It means that it is oriented at an average inclination angle in the range of 0 to 10 degrees with respect to the surface of the organic semiconductor layer.
- the polymerizable liquid crystal compound or the polymerized liquid crystal compound is “tilted-aligned” means that the polymerizable liquid crystal compound or the polymerized liquid crystal compound is in the second gate insulating layer. It means that it is oriented at an average inclination angle in the range of more than 10 degrees and less than 80 degrees with respect to the organic semiconductor layer side surface.
- the “average tilt angle” means an average angle between the disc surface and the surface of the second gate insulating layer on the organic semiconductor layer side in the case of a discotic liquid crystalline molecule, and in the case of a rod-like liquid crystalline molecule, a rod-like shape.
- the “average angle” can be calculated by fitting the incident angle dependence from two directions of the slow axis and the fast axis of retardation using ellipsometry.
- the liquid crystal phase of the polymerizable liquid crystalline compound becomes a nematic phase or a smectic phase on the first gate insulating layer when the second gate insulating layer is formed.
- the alignment state is preferably fixed by a polymerization reaction.
- the polymerizable liquid crystalline compound is a discotic liquid crystalline compound
- the liquid crystal phase of the polymerizable liquid crystalline compound is discotic nematic on the first gate insulating layer when the second gate insulating layer is formed. It is preferable that this orientation state is fixed by a polymerization reaction.
- the polymerizable liquid crystal compound used in the present invention preferably has a molecular weight of 400 to 3000, more preferably 600 to 2000.
- the liquid crystal alignment layer may be composed of only one layer or a laminate of two or more layers.
- the second gate insulating layer in addition to the polymer of the liquid crystalline compound, components derived from the material for forming the second gate insulating layer, such as an air interface alignment controller, a repellency inhibitor, a polymerization initiator, and a polymerizable monomer It may be included.
- the second gate insulating layer is made of various materials for forming the second gate insulating layer (the polymerizable liquid crystal compound, the air interface alignment controller, the repellency inhibitor, the polymerization initiator, the polymerizable monomer, etc.) in a solvent.
- a coating solution dissolved or dispersed in is prepared, and this coating solution is applied onto the orientation-treated surface of the first gate insulating layer, and this is heated, for example, so that the polymerizable liquid crystal compound is added to the first gate insulating layer. It is formed by aligning along an alignment treatment, and fixing the aligned polymerizable liquid crystalline compound simultaneously with or after the alignment. Components other than the polymerizable liquid crystalline compound that can constitute the coating solution will be described below.
- the polymerizable can be more efficiently produced.
- the liquid crystalline compound can be tilted, vertically or horizontally aligned with respect to the surface of the second gate insulating layer on the organic semiconductor layer side.
- the air interface alignment control agent a conventionally known air interface alignment control agent can be used. Among them, one or more substituted or unsubstituted aliphatic groups having 6 to 40 carbon atoms or substituted or unsubstituted aliphatic substituted oligosiloxanoxy groups having 6 to 40 carbon atoms are contained in the molecule.
- the compound which has is preferable and the compound which has 2 or more in a molecule
- Examples of air interface orientation control agents that can be used in the present invention are described in JP-A Nos. 11-352328 and 2002-20363. Further, a surfactant can be used as the air interface orientation control agent.
- surfactant examples include conventionally known surfactants, and fluorine compounds are particularly preferable. Specific examples include compounds described in paragraphs [0028] to [0056] of JP-A No. 2001-330725 and compounds described in paragraphs [0100] to [0118] of JP-A No. 2005-179636.
- the content of the air interface alignment controller in the coating solution is not particularly limited, but is preferably 0.2 parts by mass to 10 parts by mass, more preferably 0.2 parts by mass to 100 parts by mass of the polymerizable liquid crystalline compound. 5 parts by mass is more preferable, and 0.2 to 3 parts by mass is further preferable.
- the repellency inhibitor is a material for preventing repellency when a coating solution is applied.
- the compound used as the repellency inhibitor is not particularly limited as long as the tilt angle change and orientation of the liquid crystalline composition of the present invention are not significantly inhibited, and either a high molecular compound or a low molecular compound may be used.
- the anti-repellent agent is preferably a polymer. Examples of the polymer used as a repellency inhibitor are described in, for example, JP-A-8-95030. A cellulose ester can be mentioned as an example of a particularly preferable polymer as a repellency inhibitor.
- cellulose esters examples include cellulose acetate, cellulose acetate propionate, hydroxypropyl cellulose, and cellulose acetate butyrate.
- concentration of the polymer used for the purpose of preventing repellency in the coating solution is preferably 0.1 to 10% by mass, and preferably 0.1 to 8% by mass so as not to disturb the alignment of the polymerizable liquid crystalline compound. More preferably, the content is 0.1 to 5% by mass.
- a surfactant can be used as an anti-repelling agent.
- the surfactant include conventionally known surfactants, and fluorine compounds are particularly preferable. Specific examples include compounds described in paragraphs [0028] to [0056] of JP-A No. 2001-330725 and compounds described in paragraphs [0100] to [0118] of JP-A No. 2005-179636.
- the repellency inhibitor can also serve as an air interface orientation control agent.
- the concentration of the surfactant in the coating solution is preferably 0.005 to 8% by mass, more preferably 0.05 to 2.5% by mass.
- the polymerization initiator can be appropriately selected depending on the target polymerization reaction.
- a photopolymerization initiator or a thermal polymerization initiator can be used.
- these polymerization initiators conventionally known compounds can be used as the polymerization initiator.
- the polymerization initiator used is preferably a photopolymerization initiator.
- the photopolymerization initiator include a radical polymerization initiator and a photocationic polymerization initiator.
- the radical polymerization initiator is suitably used when the polymerizable group of the liquid crystal compound is an ethylenically unsaturated group. Moreover, when the polymeric group which a liquid crystalline compound has is an epoxy group, an oxetane group, a methylol group, etc., a photocationic polymerization initiator (preferably the above-mentioned photoacid generator) is used suitably. In the present invention, a radical polymerization initiator is more preferable. Examples of the photopolymerization initiator include ⁇ -carbonyl compounds (eg, ⁇ -carbonyl compounds described in US Pat. Nos. 2,367,661 and 2,367,670), acyloin ethers (eg, US Pat.
- the amount of the photopolymerization initiator used in the coating solution is preferably 0.01 to 20% by mass and more preferably 0.5 to 5% by mass in the solid content of the coating solution.
- the coating solution for forming the second gate insulating layer may contain a polymerizable monomer.
- the polymerizable monomer is not particularly limited as long as it has compatibility with the polymerizable liquid crystalline compound and does not significantly cause the alignment inhibition of the polymerizable liquid crystalline compound.
- a compound having a polymerization active ethylenically unsaturated group such as a vinyl group, a vinyloxy group, an acryloyl group and a methacryloyl group is preferably used.
- the content of the polymerizable monomer in the coating solution is preferably 0.5 to 50% by mass, more preferably 1 to 30% by mass with respect to 100% by mass of the polymerizable liquid crystalline compound in the coating solution.
- the number of polymerizable groups contained in one molecule of the polymerizable monomer is preferably 2 to 6, more preferably 2 to 4.
- the molecular weight of the polymerizable monomer is preferably 100 to 600, and more preferably 150 to 400.
- an organic solvent is preferably used as the solvent used in the coating solution for forming the second gate insulating layer.
- the organic solvent include amide (eg, N, N-dimethylformamide), sulfoxide (eg, dimethyl sulfoxide), heterocyclic compound (eg, pyridine), hydrocarbon (eg, toluene, hexane), alkyl halide ( Examples include chloroform (dichloromethane), esters (eg, methyl acetate, butyl acetate), ketones (eg, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone), and ethers (eg, tetrahydrofuran, 1,2-dimethoxyethane). Of these, alkyl halides, esters and ketones are preferred. Two or more kinds of organic solvents may be used in combination in the coating solution.
- a coating solution for forming the second gate insulating layer is prepared, and this coating solution is applied on the first gate insulating layer whose surface is subjected to orientation treatment.
- a polymerizable liquid crystal compound is aligned.
- the coating liquid can be applied by a known method (for example, spin coating method, wire bar coating method, extrusion coating method, direct gravure coating method, reverse gravure coating method, die coating method).
- a polymerizable liquid crystalline compound can be aligned by heating to a liquid crystal temperature range.
- the liquid crystal temperature region is preferably 50 ° C. to 200 ° C., more preferably 70 ° C. to 150 ° C. When the liquid crystal temperature is high, it can be adjusted by adding various materials.
- the polymerizable liquid crystalline compound After aligning the polymerizable liquid crystalline compound along the alignment treatment of the surface of the first gate insulating layer, in order to fix this alignment state, the polymerizable liquid crystalline compound (for forming the second gate insulating layer) When the coating liquid contains a polymerizable monomer separately from the polymerizable liquid crystal compound, the polymerizable liquid crystal compound and the polymerizable monomer) are polymerized.
- This polymerization reaction includes a thermal polymerization reaction using a thermal polymerization initiator, a photopolymerization reaction using a photopolymerization initiator, and a polymerization reaction by electron beam irradiation.
- a photopolymerization reaction or a polymerization reaction by electron beam irradiation is preferred, and a photopolymerization reaction is more preferred.
- the photopolymerization reaction is preferably a radical polymerization reaction or a cationic polymerization reaction, and more preferably a radical polymerization reaction.
- the irradiation energy (integrated) is preferably 0.01 to 50 J / cm 2 , and more preferably 0.05 to 0.8 J / cm 2 .
- light irradiation may be performed under heating conditions.
- the oxygen concentration in the atmosphere affects the degree of polymerization, when the desired degree of polymerization is not reached in the air, it is preferable to reduce the oxygen concentration by a method such as nitrogen substitution.
- a preferable oxygen concentration in the atmosphere for carrying out the polymerization reaction is preferably 10% or less, more preferably 7% or less, and most preferably 3% or less.
- the reaction temperature for the photopolymerization reaction is preferably 40 to 150 ° C., more preferably 60 to 100 ° C.
- the organic semiconductor layer is a layer that exhibits semiconductor properties and can accumulate carriers.
- the organic semiconductor layer may be a layer containing an organic semiconductor. It does not specifically limit as an organic semiconductor, An organic polymer, its derivative (s), a low molecular weight compound, etc. are mentioned.
- the low molecular compound means a compound other than the organic polymer and its derivative. That is, it refers to a compound having no repeating unit. As long as the low molecular weight compound is such a compound, the molecular weight is not particularly limited.
- the molecular weight of the low molecular weight compound is preferably 300 to 2000, more preferably 400 to 1000.
- Examples of the low molecular weight compound include condensed polycyclic aromatic compounds.
- acene such as naphthacene, pentacene (2,3,6,7-dibenzoanthracene), hexacene, heptacene, dibenzopentacene, tetrabenzopentacene, anthradithiophene, pyrene, benzopyrene, dibenzopyrene, chrysene, perylene, coronene, terylene , Ovalene, quaterrylene, circumanthracene, and derivatives obtained by substituting a part of these carbon atoms with atoms such as N, S, O, etc., or at least one hydrogen atom bonded to the carbon atom is a functional group such as a carbonyl group Derivatives substituted with a group (dioxaanthanthrene compounds including perixanthenoxanthene and derivatives thereof, triphenodio
- metal phthalocyanines represented by copper phthalocyanine, tetrathiapentalene and derivatives thereof, naphthalene-1,4,5,8-tetracarboxylic acid diimide, N, N′-bis (4-trifluoromethylbenzyl) naphthalene— 1,4,5,8-tetracarboxylic acid diimide, N, N′-bis (1H, 1H-perfluorooctyl), N, N′-bis (1H, 1H-perfluorobutyl), N, N′-dioctylnaphthalene -1,4,5,8-tetracarboxylic acid diimide derivatives, naphthalene tetracarboxylic acid diimides such as naphthalene-2,3,6,7-tetracarboxylic acid diimide, anthracene-2,3,6,7-tetracarboxylic acid Condensed ring tetracarboxylic acid di
- Further examples include polyanthracene, triphenylene, and quinacridone.
- low molecular weight compound examples include 4,4′-biphenyldithiol (BPDT), 4,4′-diisocyanobiphenyl, 4,4′-diisocyano-p-terphenyl, 2,5-bis (5 '-Thioacetyl-2'-thiophenyl) thiophene, 2,5-bis (5'-thioacetoxyl-2'-thiophenyl) thiophene, 4,4'-diisocyanophenyl, benzidine (biphenyl-4,4'- Diamine), TCNQ (tetracyanoquinodimethane), tetrathiafulvalene (TTF) and its derivatives, tetrathiafulvalene (TTF) -TCNQ complex, bisethylenetetrathiafulvalene (BEDTTTTF) -perchloric acid complex, BEDTTTF-iodine complex , A charge transfer complex represented by TCNQ-iod
- the organic semiconductor is preferably a low-molecular compound, and more preferably a condensed polycyclic aromatic compound.
- the condensed polycyclic aromatic compound has a high effect of improving carrier mobility and durability, and also exhibits an excellent threshold voltage reduction effect.
- the condensed polycyclic aromatic compound is preferably an acene represented by any one of formulas (A1) to (A4) and a compound represented by any one of the following general formulas (C) to (T).
- a compound represented by any one of the following general formulas (C) to (T) is more preferable because it is easily distributed with C).
- a preferable acene as the condensed polycyclic aromatic compound is represented by the following formula (A1) or (A2).
- R A1 to R A6 , X A1 and X A2 represent a hydrogen atom or a substituent.
- Z A1 and Z A2 represent S, O, Se, or Te.
- nA1 and nA2 represent an integer of 0 to 3. However, nA1 and nA2 are not 0 at the same time.
- R A1 to R A6 , X A1 and X A2 are not particularly limited, but are alkyl groups (eg, methyl, ethyl, propyl, isopropyl, tert-butyl, pentyl, tert-pentyl, hexyl).
- R A7 , R A8 , X A1 and X A2 represent a hydrogen atom or a substituent.
- R A7 , R A8 , X A1 and X A2 may be the same or different.
- the substituents represented by R A7 and R A8 are preferably those listed above as substituents that can be employed as R A1 to R A6 in formulas (A1) and (A2).
- Z A1 and Z A2 represent S, O, Se, or Te.
- nA1 and nA2 represent an integer of 0 to 3. However, nA1 and nA2 are not 0 simultaneously.
- R A7 and R A8 are preferably those represented by the following formula (SG1).
- R A9 to R A11 represent substituents.
- X A represents Si, Ge or Sn.
- the substituents represented by R A9 to R A11 are preferably those listed above as substituents that can be employed as R A1 to R A6 in formulas (A1) and (A2).
- acene or acene derivative represented by formulas (A1) to (A4) are shown below, but are not limited thereto.
- a C1 and A C2 represent an oxygen atom, a sulfur atom or a selenium atom.
- both A C1 and A C2 represent an oxygen atom and a sulfur atom, more preferably a sulfur atom.
- R C1 to R C6 represent a hydrogen atom or a substituent. At least one of R C1 to R C6 is a substituent represented by the following general formula (W).
- X D1 and X D2 represent NR D9 , an oxygen atom or a sulfur atom.
- a D1 represents CR D7 or N atom
- a D2 represents CR D8 or N atom
- R D9 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group or an acyl group.
- R D1 to R D8 represent a hydrogen atom or a substituent
- at least one of R D1 to R D8 is a substituent represented by the following general formula (W).
- X E1 and X E2 represent an oxygen atom, a sulfur atom or NR E7 .
- a E1 and A E2 represent CR E8 or a nitrogen atom.
- R E1 to R E8 represent a hydrogen atom or a substituent. At least one of R E1 to R E8 is a substituent represented by the following general formula (W).
- XF1 and XF2 represent an oxygen atom, a sulfur atom, or a selenium atom.
- X F1 and X F2 preferably represent an oxygen atom or a sulfur atom, and more preferably represent a sulfur atom.
- R F1 to R F10 , R Fa and R Fb represent a hydrogen atom or a substituent. At least one of R F1 to R F10 , R Fa and R Fb is a substituent represented by the general formula (W).
- p and q each represents an integer of 0-2.
- X G1 and X G2 represent NR G9 , an oxygen atom, or a sulfur atom.
- a G1 represents CR G7 or an N atom.
- a G2 represents CR G8 or an N atom.
- R G9 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an acyl group, an aryl group or a heteroaryl group.
- R G1 to R G8 represent a hydrogen atom or a substituent. At least one of R G1 to R G8 is a substituent represented by the following general formula (W).
- X H1 to X H4 represent NR H7 , an oxygen atom or a sulfur atom.
- X H1 to X H4 preferably represent a sulfur atom.
- R H7 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an acyl group, an aryl group or a heteroaryl group.
- R H1 to R H6 each represents a hydrogen atom or a substituent. At least one of R H1 to R H6 is a substituent represented by the following general formula (W).
- X J1 and X J2 represent an oxygen atom, a sulfur atom, a selenium atom, or NR J9 .
- X J3 and X J4 represent an oxygen atom, a sulfur atom or a selenium atom.
- X J1 , X J2 , X J3 and X J4 preferably represent a sulfur atom.
- R J1 to R J9 represent a hydrogen atom or a substituent. At least one of R J1 to R J9 is a substituent represented by the following general formula (W).
- X K1 and X K2 represent an oxygen atom, a sulfur atom, a selenium atom, or NR K9 .
- X K3 and X K4 represent an oxygen atom, a sulfur atom or a selenium atom.
- X K1 , X K2 , X K3 and X K4 preferably represent a sulfur atom.
- R K1 to R K9 represent a hydrogen atom or a substituent.
- At least one of R K1 to R K9 is a substituent represented by the following general formula (W).
- X L1 and X L2 represent an oxygen atom, a sulfur atom or NR L11 .
- X L1 and X L2 preferably represent an oxygen atom or a sulfur atom.
- R L1 to R L11 represent a hydrogen atom or a substituent, and at least one of R L1 to R L11 is a substituent represented by the following general formula (W).
- X M1 and X M2 represent an oxygen atom, a sulfur atom, a selenium atom or NR M9 .
- X M1 and X M2 preferably represent a sulfur atom.
- R M1 to R M9 represent a hydrogen atom or a substituent.
- At least one of R M1 to R M9 is a substituent represented by the following general formula (W).
- XN1 and XN2 represent an oxygen atom, a sulfur atom, a selenium atom, or NRN13 .
- X N1 and X N2 preferably represent a sulfur atom.
- R N1 to R N13 each represent a hydrogen atom or a substituent.
- At least one of R N1 to R N13 is a substituent represented by the following general formula (W).
- X P1 and X P2 represent an oxygen atom, a sulfur atom, a selenium atom, or NRP13 .
- X P1 and X P2 preferably represent a sulfur atom.
- R P1 to R P13 each represents a hydrogen atom or a substituent.
- At least one of R P1 to R P13 is a substituent represented by the following general formula (W).
- X Q1 and X Q2 represent an oxygen atom, a sulfur atom, a selenium atom, or NR Q13 .
- X Q1 and X Q2 preferably represent a sulfur atom.
- R Q1 to R Q13 each represents a hydrogen atom or a substituent.
- At least one of R Q1 to R Q13 is a substituent represented by the following general formula (W).
- X R1 , X R2 and X R3 represent an oxygen atom, a sulfur atom, a selenium atom or NR R9 .
- X R1 , X R2 and X R3 preferably represent a sulfur atom.
- R R1 to R R9 represent a hydrogen atom or a substituent.
- At least one of R R1 to R R9 is a substituent represented by the following general formula (W).
- X S1 , X S2 , X S3 and X S4 represent an oxygen atom, a sulfur atom, a selenium atom or NR S7 .
- X S1 , X S2 , X S3 and X S4 preferably represent a sulfur atom.
- R S1 to R S7 represent a hydrogen atom or a substituent. At least one of R S1 to R S7 is a substituent represented by the following general formula (W).
- X T1 , X T2 , X T3 , and X T4 represent an oxygen atom, a sulfur atom, a selenium atom, or NR T7 .
- X T1 , X T2 , X T3 and X T4 preferably represent a sulfur atom.
- R T1 to R T7 each represents a hydrogen atom or a substituent. At least one of R T1 to R T7 is a substituent represented by the following general formula (W).
- Substituents R C to R T can be a halogen atom, an alkyl group (methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl Alkyl groups having 1 to 40 carbon atoms such as 2,6-dimethyloctyl, 2-decyltetradecyl, 2-hexyldecyl, 2-ethyloctyl, 2-decyltetradecyl, 2-butyldecyl, 1-octylnonyl , 2-ethyloctyl, 2-octyltetradecyl, 2-ethylhexyl, cycloalkyl, bicycloalkyl, tricycloalkyl, etc.),
- the substituents that the substituents R C to R T can take include an alkyl group, an aryl group, an alkenyl group, an alkynyl group, a heterocyclic group, an alkoxy group, an alkylthio group, and a general formula (W) described later.
- the alkyl group, alkenyl group, alkynyl group, acyl group, and aryl group of R D9 , R G9, and R H7 are the alkyl groups and alkenyl groups described above for the substituents that R C to R T can take.
- the heteroaryl group has the same meaning as the heteroaryl group described for the substituents of R A1 to R A6 .
- L represents a divalent linking group represented by any one of the following general formulas (L-1) to (L-25), or the following general formulas (L-1) to (L-25).
- R W is a substituted or unsubstituted alkyl group, a cyano group, a vinyl group, an ethynyl group, an oxyethylene group, repetition number v of oxyethylene units is more than one oligo oxyethylene group, a siloxane group, the number of silicon atoms is more than one It represents an oligosiloxane group or a substituted or unsubstituted trialkylsilyl group.
- the wavy line represents the bonding position with any ring forming each skeleton represented by the general formulas (C) to (T).
- L represents a divalent linking group in which two or more divalent linking groups represented by any of the general formulas (L-1) to (L-25) are bonded
- the moiety is a bonding position with any ring forming each skeleton represented by the general formulas (C) to (T) and a divalent group represented by the general formulas (L-1) to (L-25).
- R LZ is independently It represents a hydrogen atom or a substituent, formula (L-1) and (L-2) R LZ may form a condensed ring by combining with R W adjacent L respectively in.
- R N represents a hydrogen atom or a substituent
- R si each independently represents a hydrogen atom, an alkyl group, an alkenyl group, or an alkynyl group.
- the divalent linking groups represented by the general formulas (L-17) to (L-21), (L-23) and (L-24) are represented by the following general formulas (L-17A) to (L It is more preferably a divalent linking group represented by -21A), (L-23A) and (L-24A).
- a substituted or unsubstituted alkyl group an oxyethylene group, an oligooxyethylene group having a repeating number v of 2 or more, a siloxane group, an oligosiloxane group having 2 or more silicon atoms, or a substituted or unsubstituted group. If a trialkylsilyl group substitutions present on the end of the substituent of the general formula (W) -R W alone and can also be interpreted in, be interpreted as -L-R W in the general formula (W) it can.
- two (2) R LZ is a hydrogen atom (L-1) and n-heptyl having 7 carbon atoms.
- the substituent represented by the general formula (W) is an alkoxy group having 8 carbon atoms
- one linking group represented by the general formula (L-4) which is —O— and two R This is interpreted as a substituent in which one linking group represented by (L-1), in which LZ is a hydrogen atom, and an n-heptyl group having 7 carbon atoms are bonded.
- an oxyethylene group an oligooxyethylene group having a repeating number v of 2 or more, a siloxane group, an oligosiloxane group having 2 or more silicon atoms, or a substituted or unsubstituted trialkylsilyl group. If a group is present at the end of the substituents on including a linking group as possible from the end of the substituent, it is interpreted as R W alone in the general formula (W).
- the substituent R LZ in the general formulas (L-1), (L-2), (L-6) and (L-13) to (L-24) is represented by the general formulas (C) to (T). It may be mentioned those exemplified as the substituents of the substituents R C ⁇ R T can be taken.
- substituents R LZ in that in any general formula (L-6) is an alkyl group if (L-6) in the R LZ is an alkyl group has a carbon number of the alkyl group of 1 to It is preferably 9, more preferably 4 to 9 from the viewpoint of chemical stability and carrier transport properties, and further preferably 5 to 9.
- R LZ in (L-6) is an alkyl group
- the alkyl group is preferably a linear alkyl group from the viewpoint of increasing carrier mobility.
- the R N may be mentioned those exemplified as the substituents which may take the substituents R C ⁇ R T. Among them a hydrogen atom or a methyl group is preferable as also R N.
- R si is preferably an alkyl group. There are no particular limitations on the alkyl group R si can take, the preferred range of the alkyl group R si can take is the same as the preferred ranges of the alkyl group can take the silyl group when R W is a silyl group .
- the alkenyl group that R si can take is not particularly limited, but is preferably a substituted or unsubstituted alkenyl group, more preferably a branched alkenyl group, and the alkenyl group preferably has 2 to 3 carbon atoms.
- the alkynyl group that R si can take is not particularly limited, but is preferably a substituted or unsubstituted alkynyl group, more preferably a branched alkynyl group, and the alkynyl group has 2 to 3 carbon atoms. preferable.
- L is a divalent linking group represented by any one of the general formulas (L-1) to (L-5), (L-13), (L-17) or (L-18), or A divalent linkage in which two or more divalent linking groups represented by any one of (L-1) to (L-5), (L-13), (L-17) or (L-18) are bonded.
- divalent divalent linking group represented by the linking group and formula (L-1) of that is a divalent linking group attached is particularly preferred.
- There divalent linking group bonded is preferably a divalent linking group represented by formula (L-1) binds to R W side.
- a divalent linking group including a divalent linking group represented by the general formula (L-1) is particularly preferred, represented by the general formula (L-1).
- L is a divalent linking group represented by the general formulas (L-18) and (L-1), and (L-1) bonded to R W, more particularly preferably more that R W is a substituted or unsubstituted alkyl group, a divalent linking group L is represented by the general formula (L-18A) and (L-1) Yes, (L-1) via bonded to R W, it is even more particularly preferred R W is a substituted or unsubstituted alkyl group.
- R W may be a substituted or unsubstituted alkyl group.
- R W represents a substituted or unsubstituted alkyl group, an oxyethylene group, It is preferably an oligooxyethylene group having 2 or more repeating oxyethylene units, a siloxane group, or an oligosiloxane group having 2 or more silicon atoms, more preferably a substituted or unsubstituted alkyl group.
- R W when L adjacent to R W is a divalent linking group represented by formula (L-2) and (L-4) ⁇ (L -25) is, R W is It is more preferably a substituted or unsubstituted alkyl group.
- R W when L adjacent to R W is a divalent linking group represented by the general formula (L-3) is, R W represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted The silyl group is preferable.
- R W is a substituted or unsubstituted alkyl group, it preferably has a carbon number of 4-17, it is chemically stable is 6 to 14, more preferably from the viewpoint of carrier transportability, 6-12 More preferably it is. It R W are long-chain alkyl group having the above-mentioned range, and particularly a straight-chain alkyl group of chain increases the linearity of the molecule, from the viewpoint of capable of enhancing the carrier mobility.
- R W represents an alkyl group, a straight-chain alkyl group, even branched alkyl group, it may be a cyclic alkyl group, a straight-chain alkyl group, increased linearity of the molecules, to increase the carrier mobility
- a divalent linking group L in formula (C) ⁇ (T) is represented by formula (L-1), and either an alkyl group R W is 1-4 carbon atoms, straight-chain 17; or, L is the general formula (L-3), any one Tsudehyo of (L-13) or (L-18) a divalent divalent divalent linking group linking group is attached, which is represented by the linking group and formula (L-1) that are, and that R W is a straight chain alkyl group, This is preferable from the viewpoint of increasing carrier mobility.
- L is a divalent linking group represented by formula (L-1), and, if R W is an alkyl group having a carbon number of 4 to 17 linear, carbon atoms R W is a linear 6 From the viewpoint of increasing carrier mobility, a linear alkyl group having 6 to 12 carbon atoms is particularly preferable.
- L is a divalent linking group represented by any one of general formulas (L-3), (L-13) or (L-18) and a divalent linking group represented by general formula (L-1).
- a divalent linking group of the linking group is bonded, and, if R W is a straight chain alkyl group, more preferably R W is an alkyl group having a carbon number of 4 to 17 linear, straight-chain
- the alkyl group having 6 to 14 carbon atoms is more preferable from the viewpoints of chemical stability and carrier transport properties, and the straight chain alkyl group having 6 to 12 carbon atoms is particularly preferable from the viewpoint of increasing carrier mobility. preferable.
- R W is a branched alkyl group.
- R W is an alkyl group having a substituent
- substituents when R W is an alkyl group having a substituent include a halogen atom, a fluorine atom is preferred. It is also possible if R W is an alkyl group having a fluorine atom is substituted with any hydrogen atom of the alkyl group a fluorine atom to form a perfluoroalkyl group. However, it is preferred that R W is an unsubstituted alkyl group.
- R W is ethylene group or an oligo ethylene group, and represented by R W "oligooxyethylene group" herein, - (OCH 2 CH 2) v refers to the group represented by OY (
- the repeating number v of the oxyethylene unit represents an integer of 2 or more, and Y at the terminal represents a hydrogen atom or a substituent.
- Y at the terminal of the oligooxyethylene group is a hydrogen atom, it becomes a hydroxy group.
- the number of repeating oxyethylene units v is preferably 2 to 4, and more preferably 2 to 3.
- the terminal hydroxy group of the oligooxyethylene group is preferably sealed, that is, Y represents a substituent.
- the hydroxy group is preferably sealed with an alkyl group having 1 to 3 carbon atoms, that is, Y is preferably an alkyl group having 1 to 3 carbon atoms, and Y is a methyl group or an ethyl group. Is more preferable, and a methyl group is particularly preferable.
- R W is, for siloxane group or an oligosiloxane groups, the number of repetitions of the siloxane units is preferably from 2 to 4, more preferably 2-3. Further, it is preferable that a hydrogen atom or an alkyl group is bonded to the Si atom. When an alkyl group is bonded to the Si atom, the alkyl group preferably has 1 to 3 carbon atoms, and for example, a methyl group or an ethyl group is preferably bonded. The same alkyl group may be bonded to the Si atom, or different alkyl groups or hydrogen atoms may be bonded thereto. Moreover, although all the siloxane units which comprise an oligosiloxane group may be the same or different, it is preferable that all are the same.
- R W is a substituted or unsubstituted silyl group. If R W is a substituted or unsubstituted silyl group Among them, it is preferred that R W is a substituted silyl group. Although there is no restriction
- R W is a trialkylsilyl group
- the carbon number of the alkyl group bonded to the Si atom is 1-3, for example, it is preferable to bind a methyl group or an ethyl group or an isopropyl group.
- the same alkyl group may be bonded to the Si atom, or different alkyl groups may be bonded thereto. Examples of the substituents when R W is a trialkylsilyl group having a substituent on the alkyl group is not particularly limited.
- the total number of carbon atoms contained in L and R W is 5 to 18. If the total number of carbon atoms contained in L and R W is at least the lower limit within the above range, the carrier mobility is high, lower the driving voltage. If the total number of carbon atoms contained in L and R W is not more than the upper limit of the above range, solubility in an organic solvent is increased. Preferably the total number of carbon atoms contained in L and R W is 5 to 14, more preferably 6 to 14, particularly preferably from 6 to 12, in particular more to be 8-12 preferable.
- the number of the groups represented by the general formula (W) is 1 to 4, and the carrier mobility is It is preferable from the viewpoint of increasing the solubility in an organic solvent, more preferably 1 or 2, and particularly preferably 2.
- the position of the group represented by the general formula (W) is not particularly limited.
- any one of R C1 , R C2 , R C3 and R C6 is preferably a group represented by the general formula (W), and R C1 and R C2 It is more preferable that both or both R C3 and R C6 are groups represented by the general formula (W).
- R D6 is preferably a group represented by the general formula (W), and both R D5 and R D6 are represented by the general formula (W). More preferably, it is a group.
- R E6 is preferably a group represented by the general formula (W), and both R E5 and R E6 are represented by the general formula (W). More preferably, it is a group. Further, when R E5 and R E6 are substituents other than the group represented by the general formula (W), it is also preferable that two R E7 are groups represented by the general formula (W).
- R F2 , R F3 , R F8 and R F9 is a substituent represented by the general formula (W).
- R G5 or R G6 is a group represented by the general formula (W) from the viewpoint of increasing carrier mobility and increasing solubility in an organic solvent. preferable.
- R H4 or R H6 is preferably a group represented by the general formula (W), and R H4 or R H6 and R H3 or R H5 are generally used. The group represented by the formula (W) is more preferable.
- R J8 is preferably a group represented by the general formula (W), and both R J8 and R J4 are represented by the general formula (W). More preferably, it is a group.
- R K7 is preferably a group represented by the general formula (W), and both R K7 and R K3 are represented by the general formula (W). More preferably, it is a group.
- R L2 , R L3 , R L6 and R L7 is a group represented by the general formula (W).
- R M2 is preferably a group represented by the general formula (W), and both R M2 and R M6 are represented by the general formula (W). More preferably, it is a group.
- R N3 is represented by the general formula (W)
- both R N3 and R N9 are represented by formula (W) More preferably, it is a group.
- R P2 or R P3 is preferably a group represented by the general formula (W), and both R P2 and R P8 or both R P3 and R P9 It is more preferable that both are groups represented by the general formula (W).
- R Q3 is preferably a group represented by the general formula (W), and both R Q3 and R Q9 are represented by the general formula (W). More preferably, it is a group.
- R R2 is preferably a group represented by the general formula (W), and both R R2 and R R7 are represented by the general formula (W). More preferably, it is a group.
- R S2 is preferably a group represented by the general formula (W), and both R S2 and R S5 are represented by the general formula (W). More preferably, it is a group.
- R T2 is preferably a group represented by the general formula (W), and both R T2 and R T5 are represented by the general formula (W). More preferably, it is a group.
- the number of substituents other than the group represented by the general formula (W) is preferably 0 to 4, more preferably 0 to 2.
- the compound represented by the general formula (C) preferably has a molecular weight of 3000 or less, more preferably 2000 or less, further preferably 1000 or less, and particularly preferably 850 or less.
- the molecular weight is within the above range, solubility in a solvent can be enhanced.
- the molecular weight is preferably 300 or more, more preferably 350 or more, and further preferably 400 or more.
- the molecular weight of the compound represented by the general formula (D) is preferably the same as that of the compound represented by the general formula (C) because the solubility in a solvent can be increased.
- the molecular weight is preferably 400 or more, more preferably 450 or more, and further preferably 500 or more.
- the molecular weights of the compound E, the compound F, the compound G, and the compound H are preferably the same as the compound C whose upper limit is represented by the general formula (C), so that the solubility in a solvent can be improved. .
- the lower limit of the molecular weight is the same as the compound represented by the general formula (D).
- the upper limit of the molecular weights of the compound J and the compound K is the same as that of the compound C represented by the general formula (C), so that the solubility in a solvent can be improved.
- the lower limit of the molecular weight is the same as the compound represented by the general formula (D).
- the molecular weights of the compound L, the compound M, the compound N, the compound P, and the compound Q are the same as those of the compound C represented by the general formula (C) in the upper limit, which increases the solubility in a solvent. It is possible and preferable.
- the lower limit of the molecular weight is the same as the compound represented by the general formula (D).
- the molecular weights of the compound R, the compound S, and the compound T are preferably the same as those of the compound C represented by the general formula (C), because the solubility in the solvent can be improved.
- the lower limit of the molecular weight is the same as the compound represented by the general formula (D).
- organic polymer and derivatives thereof examples include polypyrrole and substituted products thereof, polydiketopyrrole and substituted products thereof, polythiophene and derivatives thereof, isothianaphthene such as polyisothianaphthene, thienylene vinylene such as polythienylene vinylene, poly Poly (p-phenylene vinylene) such as (p-phenylene vinylene), polyaniline and its derivatives, polyacetylene, polydiacetylene, polyazulene, polypyrene, polycarbazole, polyselenophene, polyfuran, poly (p-phenylene), polyindole, poly Examples thereof include polymers such as pyridazine, polytellurophene, polynaphthalene, polyvinylcarbazole, polyphenylene sulfide, and polyvinylene sulfide, and polymers of condensed polycyclic aromatic compounds.
- the polythiophene and derivatives thereof are not particularly limited.
- poly-3-hexylthiophene (P3HT) in which hexyl group is introduced into polythiophene, polyethylenedioxythiophene, poly (3,4-ethylenedioxythiophene) / polystyrenesulfone An acid (PEDOT / PSS) etc. are mentioned.
- the oligomer for example, oligothiophene which has the same repeating unit as these polymers can also be mentioned.
- Examples of the organic polymer include polymer compounds in which compounds represented by the following general formulas (C) to (T) have a repeating structure.
- a compound represented by the general formulas (C) to (T) has a ⁇ -conjugated structure in which a repeating structure is formed via at least one arylene group or heteroarylene group (thiophene, bithiophene, etc.).
- Examples thereof include a polymer and a pendant polymer in which compounds represented by the general formulas (C) to (T) are bonded to a polymer main chain via a side chain.
- the polymer main chain is preferably polyacrylate, polyvinyl, polysiloxane or the like, and the side chain is preferably an alkylene group or a polyethylene oxide group.
- the polymer main chain may be formed by polymerizing at least one of the substituents R C to R T having a group derived from a polymerizable group.
- These organic polymers preferably have a weight average molecular weight of 30,000 or more, more preferably 50,000 or more, and even more preferably 100,000 or more.
- the weight average molecular weight is not less than the above lower limit value, the intermolecular interaction can be enhanced and high mobility can be obtained.
- the source electrode is an electrode through which current flows from the outside through the wiring.
- the drain electrode is an electrode that sends current to the outside through wiring, and is usually provided in contact with the semiconductor layer.
- a conductive material used in a conventional organic thin film transistor can be used, and examples thereof include the conductive material described for the gate electrode.
- the source electrode and the drain electrode can be formed by a method similar to the method for forming the gate electrode, respectively.
- a lift-off method or an etching method can be employed.
- the source electrode and the drain electrode can be preferably formed by an etching method.
- the etching method is a method of removing unnecessary portions by etching after forming a conductive material.
- the conductive material remaining on the base when the resist is removed can be peeled off, and the resist residue or the removed conductive material can be prevented from reattaching to the base, and the shape of the electrode edge portion is excellent. This is preferable to the lift-off method.
- a resist is applied to a part of the base, a conductive material is formed thereon, and the resist is removed together with the solvent by elution or peeling with a solvent.
- This is a method of forming a film of a conductive material only on a portion where no is applied.
- a source electrode and a drain electrode is arbitrary, 1 nm or more is preferable respectively and 10 nm or more is especially preferable. Moreover, 500 nm or less is preferable and 300 nm or less is especially preferable.
- the interval (channel length) between the source electrode and the drain electrode is arbitrary, but is preferably 100 ⁇ m or less, and particularly preferably 50 ⁇ m or less.
- the channel width is preferably 5000 ⁇ m or less, and particularly preferably 1000 ⁇ m or less.
- the OTFT of the present invention may have an overcoat layer.
- the overcoat layer is usually a layer formed as a protective layer on the surface of the OTFT.
- a single layer structure or a multilayer structure may be used.
- the overcoat layer may be an organic overcoat layer or an inorganic overcoat layer.
- the material for forming the organic overcoat layer is not particularly limited, and examples thereof include organic polymers such as polystyrene, acrylic resin, polyvinyl alcohol, polyolefin, polyimide, polyurethane, polyacetylene, and epoxy resin, and these organic polymers. Derivatives in which a crosslinkable group or a water repellent group is introduced may be mentioned.
- organic polymers and derivatives thereof can be used in combination with a crosslinking component, a fluorine compound, a silicon compound, and the like.
- the material for forming the inorganic overcoat layer is not particularly limited, and examples thereof include metal oxides such as silicon oxide and aluminum oxide, and metal nitrides such as silicon nitride. These materials may be used alone or in combination of two or more in any combination and ratio.
- the organic overcoat layer is, for example, a solution containing a material to be an overcoat layer is applied and dried on the underlying layer, a solution containing a material to be an overcoat layer is applied, and exposure is performed after drying. It can be formed by a method such as development and patterning. The patterning of the overcoat layer can also be directly formed by a printing method, an inkjet method, or the like. The overcoat layer may be crosslinked by exposure or heating after the patterning of the overcoat layer.
- the inorganic overcoat layer can be formed by a dry method such as a sputtering method or a vapor deposition method or a wet method such as a sol-gel method.
- the OTFT of the present invention may be provided with layers and members other than those described above.
- Examples of other layers or members include banks.
- the bank is used for the purpose of blocking the discharge liquid at a predetermined position when a semiconductor layer, an overcoat layer, or the like is formed by an inkjet method or the like. For this reason, the bank usually has liquid repellency.
- Examples of the bank forming method include a method of performing liquid repellency treatment such as a fluorine plasma method after patterning by a photolithography method or the like, a method of curing a photosensitive composition containing a liquid repellent component such as a fluorine compound, and the like.
- the method of curing the photosensitive composition containing the latter liquid repellent component may cause the gate insulating layer to be affected by the liquid repellent treatment.
- a technique may be used in which a liquid repellent contrast is given to the base without using the bank so as to have the same role as the bank.
- the OTFT of the present invention is preferably used by being mounted on a display panel.
- the display panel include a liquid crystal panel, an organic EL panel, and an electronic paper panel.
- a rubbing treatment (orientation treatment) was performed on the film surface using a cotton cloth to form a first gate insulating layer.
- ⁇ Second gate insulating layer> A polymerizable liquid crystal compound (liquid crystal monomer) shown in the following table and a polymerization initiator shown in the following table were dissolved in methyl ethyl ketone to prepare a coating solution having a solid content concentration of 10 wt%.
- the content of the polymerization initiator was 3 parts by mass with respect to 100 parts by mass of the liquid crystalline monomer.
- a part of the coating solution was added with a surfactant (air interface alignment controller) shown in the following table so that the amount was 0.5 parts by mass with respect to 100 parts by mass of the liquid crystalline monomer in the coating solution. .
- the obtained coating solution was spin-coated on the rubbing-treated surface of the first gate insulating layer (2000 rotations, 10 seconds). Then, it heated at 110 degreeC and matured the orientation of the polymerizable liquid crystalline monomer. Then, ultraviolet rays are irradiated at a temperature of 60 ° C., 130 ° C. or 140 ° C. (cumulative irradiation amount: 500 mJ / cm 2 , 10 seconds) to polymerize the liquid crystalline monomer and fix the alignment state, whereby the second gate An insulating layer (thickness 220 nm) was formed.
- Gold was vacuum-deposited on the second gate insulating layer prepared above, and a source electrode and a drain electrode having a channel length of 50 ⁇ m, a channel width of 10 mm, and a thickness of 50 nm were produced.
- ⁇ Organic semiconductor layer> A toluene solution in which the organic semiconductor shown in the following table was dissolved at a concentration of 0.5 wt% was prepared. This solution was spin-coated between the source and drain electrodes (20 seconds at 500 rotations and 20 seconds at 1000 rotations), and an organic semiconductor layer was formed so that the layer thickness after drying was 150 nm. Thus, an OTFT was obtained.
- OTFTs having the second gate insulating layers X1 to X5 and Y1 to Y4 are referred to as OTFTs Xt1 to Xt5 and OTFTs Yt1 to Yt4, respectively.
- OTFT Zt1 OTFT Zt1.
- Production of bottom-gate OTFT-3 In Production Example 1, a polymer liquid crystalline compound having the following repeating unit (weight average molecular weight: 9300) is used in place of the liquid crystalline monomer, alignment aging is performed at 80 ° C., and polymerization reaction is not performed by ultraviolet irradiation. An OTFT was produced in the same manner as in Production Example 1 except that. The following polymeric liquid crystalline compounds exhibit a nematic phase at 60 to 90 ° C.
- OTFT Zt2 The obtained OTFT is called OTFT Zt2.
- Xt5 and Yt4 OTFTs in which the polymer of the liquid crystal compound constituting the second gate insulating layer is not oriented resulted in inferior carrier mobility. This is presumably because the alignment of the organic semiconductor could not be induced in the organic semiconductor layer formed thereon because the polymer of the liquid crystalline compound constituting the second gate insulating layer was not aligned. Further, the carrier mobility of the Zt1 OTFT manufactured by forming the gate electrode on the orientation-treated surface of the first gate insulating layer and providing the second gate insulating layer so as to cover the gate electrode significantly decreased. .
- the OTFT of Zt1 since the gate electrode exists in a part between the alignment treatment surface of the first gate insulating layer and the second gate insulation layer, the second due to the alignment treatment of the first gate insulation layer surface. This is probably because the orientation regulating force of the gate insulating layer did not sufficiently work, and as a result, the organic semiconductor in the second gate insulating layer and further the organic semiconductor layer formed thereon could not be sufficiently oriented.
- the Zt2 OTFT in which the liquid crystalline polymer forming the second gate insulating layer is in an aligned state but the alignment state is not fixed also has a poor carrier mobility. This is considered to be one of the reasons that the alignment state was insufficient because the alignment aging temperature was low.
- Xt1 to Xt4 and Yt1 to Yt3 included in the present invention are OTFTs that exhibit high carrier mobility and can perform switching operation more quickly.
- the carrier mobility of the OTFT of Zt2 in which the alignment state of the liquid crystal compound constituting the second gate insulating layer is not fixed is greatly reduced when exposed to the high temperature. This is presumably because the polymer liquid crystalline compound constituting the second gate insulating layer in Zt2 lost its orientation by being exposed to a high temperature.
- Xt1 to Xt4 and Yt1 to Yt3 included in the present invention are excellent in heat resistance without substantially decreasing carrier mobility even when treated at 140 ° C. for 30 minutes. .
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Abstract
Description
これに対し近年では、有機半導体を用いたTFTも普及してきている。有機半導体層は、インクジェット、スピンコート、フレキソ印刷等の方法により成膜できるため、成膜プロセスをより低温で、高速・効率的に、低コストで行うことができる。
また、特許文献2には、ゲート絶縁層の少なくとも一層が誘電率異方性を有する液晶ポリマーからなる電界効果型有機トランジスタが記載されている。特許文献2に記載のトランジスタの構成により、ゲート絶縁層上に形成される有機半導体の配向性が制御される。
また、上記特許文献2に記載の電界効果型有機トランジスタは、ゲート絶縁層の配向が固定化されておらず流動性を示すため、その上に形成された有機半導体層の結晶に亀裂が生じやすく、性能が劣化しやすい。特に、ゲート絶縁層を液晶形成温度より高温に曝すことでゲート絶縁層の配向性が容易に失われてしまうため、上記特許文献2に記載の電界効果型有機トランジスタの耐熱性は十分とはいえない。
〔1〕
基板と、基板上に設けられたゲート電極と、ゲート電極を覆って設けられた第1ゲート絶縁層と、第1ゲート絶縁層上に設けられた第2ゲート絶縁層と、第2ゲート絶縁層上に設けられた有機半導体層と、有機半導体層に接して設けられ、有機半導体層を介して連結されたソース電極及びドレイン電極とを有するボトムゲート型有機薄膜トランジスタであって、
第1ゲート絶縁層の第2ゲート絶縁層側表面には配向処理が施され、
第2ゲート絶縁層が、配向処理に沿って配向させた重合性の液晶性化合物を配向状態で重合固定化してなる層である、有機薄膜トランジスタ。
〔2〕
重合性の液晶性化合物が棒状液晶性化合物であり、配向処理に沿って配向させた重合性の液晶性化合物の液晶相がネマチック相又はスメクチック相である、〔1〕に記載の有機薄膜トランジスタ。
〔3〕
重合性の液晶性化合物が円盤状液晶性化合物であり、配向処理に沿って配向させた重合性の液晶性化合物の液晶相がディスコチックネマチック相である、〔1〕に記載の有機薄膜トランジスタ。
〔4〕
第2ゲート絶縁層の前記有機半導体層側表面において、重合固定化された液晶性化合物が水平配向している、〔1〕~〔3〕のいずれかに記載の有機薄膜トランジスタ。
〔5〕
第2ゲート絶縁層の前記有機半導体層側表面において、重合固定化された液晶性化合物が垂直配向している、〔1〕~〔3〕のいずれかに記載の有機薄膜トランジスタ。
〔6〕
第2ゲート絶縁層の前記有機半導体層側表面において、重合固定化された液晶性化合物が傾斜配向している、〔1〕~〔3〕のいずれかに記載の有機薄膜トランジスタ。
〔7〕
第1ゲート絶縁層が、ポリイミド、ポリビニルフェノール、ノボラック樹脂、ポリスチレン、ポリ(メタ)アクリレート、エポキシ樹脂、エポキシ(メタ)アクリレート、ポリビニルアルコール、フッ素樹脂、ポリシクロオレフィン、ポリシルセスキオキサン、ポリシロキサン、ポリエステル、ポリエーテルスルホン、及びポリエーテルケトンから選ばれる有機高分子化合物を含有する、〔1〕~〔6〕のいずれか1項に記載の有機薄膜トランジスタ。
なお、本明細書において「~」を用いて表される数値範囲は、「~」前後に記載される数値を下限値および上限値として含む範囲を意味する。
本発明の有機薄膜トランジスタ(以下、単に「本発明のOTFT」という。)の形態を以下に説明する。
図1(A)及び(B)は、各々、本発明のOTFTの代表的な好ましい形態を模式的に表わす縦断面図である。図1(A)及び(B)において、1は有機半導体層、2はゲート絶縁層、3はソース電極、4はドレイン電極、5はゲート電極、6は基板を示す。ゲート絶縁層2は、第1ゲート絶縁層2Aと第2ゲート絶縁層2Bとから構成される。第1ゲート絶縁層2Aの、第2ゲート絶縁層側表面2aには配向処理が施されている。この配向処理に沿って、第2ゲート絶縁層の構成材料である液晶性化合物を配向させることができる。
また、図1(A)は、ボトムゲート・ボトムコンタクト型、図1(B)は、ボトムゲート・トップコンタクト型を示している。本発明のOTFTには上記2つの形態が包含される。図示を省略するが、OTFTの図面最上部(基板6に対して反対側)には、オーバーコート層が形成されている場合もある。
本発明のOTFTを構成する部材ないし材料について以下に説明する。
基板は、OTFT及びその上に作製される表示パネル等を支持できるものであればよい。基板は、表面に絶縁性があり、シート状で、表面が平坦であれば特に限定されない。
基板がステンレスシート、アルミ箔、銅箔又はシリコンウェハ等の導電性あるいは半導体性の材料で形成されている場合、通常は、表面に絶縁性の高分子材料あるいは金属酸化物等を塗布又は積層して用いられる。
このような可撓性を有するプラスチック基板等を使用すれば、例えば曲面形状を有するディスプレイ装置や電子機器へのOTFTの組込みあるいは一体化が可能となる。
また、基板を構成する有機材料は、OTFT作製時に用いる溶媒に対する耐性を有する材料が好ましく、また、ゲート絶縁層及び電極との密着性に優れる材料が好ましい。
さらに、ガスバリア性の高い有機ポリマーからなるプラスチック基板を用いることも好ましい。
基板の少なくとも片面に緻密なシリコン酸化膜等を設けたり、無機材料を蒸着又は積層したりすることも好ましい。
ゲート電極は、OTFTのゲート電極として用いられている従来公知の電極を用いることができる。ゲート電極を構成する導電性材料(電極材料ともいう)としては、特に限定されない。例えば、白金、金、銀、アルミニウム、クロム、ニッケル、銅、モリブデン、チタン、マグネシウム、カルシウム、バリウム、ナトリウム、パラジウム、鉄、マンガン等の金属;InO2、SnO2、インジウム・錫酸化物(ITO)、フッ素ドープ酸化錫(FTO)、アルミニウムドープ酸化亜鉛(AZO)、ガリウムドープ酸化亜鉛(GZO)等の導電性金属酸化物;ポリアニリン、ポリピロール、ポリチオフェン、ポリアセチレン、ポリ(3,4-エチレンジオキシチオフェン)/ポリスチレンスルホン酸(PEDOT/PSS)等の導電性高分子;塩酸、硫酸、スルホン酸等の酸、PF6、AsF5、FeCl3等のルイス酸、ヨウ素等のハロゲン原子、ナトリウム、カリウム等の金属原子等のドーパントを添加した上記導電性高分子、並びに、カーボンブラック、グラファイト粉、金属微粒子等を分散した導電性の複合材料等が挙げられる。これらの材料は、1種のみを用いても、2種以上を任意の組み合わせ及び比率で併用してもよい。
また、ゲート電極は、上記導電性材料からなる1層でもよく、2層以上を積層してもよい。
塗布法では、上記材料の溶液、ペースト又は分散液を調製、塗布し、乾燥、焼成、光硬化又はエージング等により、膜を形成し、又は直接電極を形成できる。
また、インクジェット印刷、スクリーン印刷、(反転)オフセット印刷、凸版印刷、凹版印刷、平版印刷、熱転写印刷、マイクロコンタクトプリンティング法等は、所望のパターニングが可能であり、工程の簡素化、コスト低減、高速化の点で好ましい。
スピンコート法、ダイコート法、マイクログラビアコート法、ディップコート法を採用する場合も、下記フォトリソグラフィー法等と組み合わせてパターニングすることができる。
他のパターニング方法として、上記材料に、レーザーや電子線等のエネルギー線を照射して、研磨し、又は材料の導電性を変化させる方法も挙げられる。
さらに、基板以外の支持体に印刷したゲート電極用組成物を基板等の下地層の上に転写させる方法も挙げられる。
<第1ゲート絶縁層>
第1ゲート絶縁層は、絶縁性を有する層であれば特に限定されず、単層であってもよいし、多層であってもよい。
第1ゲート絶縁層は、絶縁性の材料で形成されるのが好ましく、絶縁性の材料として、例えば、有機高分子、無機酸化物等が好ましく挙げられる。
有機高分子及び無機酸化物等は、絶縁性を有するものであれば特に限定されず、薄膜、例えば厚み1μm以下の薄膜を形成できるものが好ましい。
有機高分子及び無機酸化物は、ぞれぞれ、1種を用いても、2種以上を併用してもよく、また、有機高分子と無機酸化物を併用してもよい。
有機高分子は、アルコキシシリル基やビニル基、アクリロイルオキシ基、エポキシ基、メチロール基等の反応性置換基を有する化合物と併用することもできる。
また、特開2013-214649号公報の[0167]~[0177]に記載の「数平均分子量(Mn)が140~5,000であり、架橋性官能基を有し、フッ素原子を有さない化合物(G)」を用いるのも好ましく、これらの内容は好ましくは本願明細書に組み込まれる。
熱により酸を発生させる熱酸発生剤(触媒)として、例えば、特開2010-285518号公報の[0035]~[0038]に記載の熱カチオン重合開始剤、特にオニウム塩等や、特開2005-354012号公報の[0034]~[0035]に記載の触媒、特にスルホン酸類及びスルホン酸アミン塩等を好ましく使用することができ、好ましくはこれらの内容は本願明細書に組み込まれる。
また、特開2005-354012号公報の[0032]~[0033]に記載の架橋剤、特に二官能以上のエポキシ化合物、オキセタン化合物、特開2006-303465号公報の[0046]~[0062]に記載の架橋剤、特に2個以上の架橋基を有し、該架橋基の少なくとも一つがメチロール基もしくはNH基であることを特徴とする化合物、及び、特開2012-163946号公報の[0137]~[0145]に記載の、ヒドロキシメチル基又はアルコキシメチル基を分子内に2個以上有する化合物を用いるのも好ましく、これらの内容は好ましくは本願明細書に組み込まれる。
上記フッ素樹脂としては、ポリフッ化ビニリデン又はポリテトラフルオロエチレンが好ましい。上記ポリシロキサンとしては、ジアルキルポリシロキサンが好ましく、ポリジメチルシロキサンがより好ましい。
第1ゲート絶縁層に含まれる上記有機高分子は上述のように架橋構造を形成していてもよい。また、上記有機高分子(ポリマー)の構成成分を構成単位とする共重合体の形態であってもよい。
また、それぞれの金属酸化物に対応する前駆体、具体的には塩化物、臭化物等の金属ハロゲン化物や金属アルコキシド、金属水酸化物等を、アルコールや水中で塩酸、硫酸、硝酸等の酸や水酸化ナトリウム、水酸化カリウム等の塩基と反応させて加水分解することにより、形成してもよい。このような溶液系のプロセスを用いる場合、上記ウエットコーティング法を用いることができる。
第1ゲート絶縁層は、その第2ゲート絶縁層側表面に配向処理が施されている。配向処理の方法に特に制限はなく、従来公知の配向処理方法を採用することができる。例えば、第1絶縁層を構成する有機化合物(好ましくは、ポリマー)のラビング処理、無機化合物の斜方蒸着、マイクログルーブを有する層の形成、または、ラングミュア・ブロジェット法(LB膜)による有機化合物(例えば、ω-トリコサン酸、ステアリル酸メチル)の累積により配向処理を施すことができる。さらに、第1絶縁層表面を構成する有機化合物に電場や磁場を付与したり、第1絶縁層表面を構成する有機化合物に光照射(直線偏光照射又は非偏光照射)することで配向処理を行うこともできる。
なかでも、本発明においては第1ゲート絶縁層の少なくとも第2絶縁層側表面をポリマーで構成し、この第2絶縁層側表面をラビングする方法を採用することが好ましい。ラビング処理は、一般にはポリマー層の表面を、紙や布で一定方向に数回擦ることにより実施することができる。特に本発明では「液晶便覧」(発行所:丸善株式会社、2000年10月 30 日発行、p226~229)に記載されている方法によりラビング処理を施すことが好ましい。
第1ゲート絶縁層の、第2ゲート絶縁層側表面に配向処理が施されていることで、後述する第2ゲート絶縁層の材料とする重合性の液晶性化合物を配向処理に沿って配向させることができる。
第2ゲート絶縁層は、重合性の(重合性基を有する)液晶性化合物の1種又は2種以上を用いて形成される。第2ゲート絶縁層は、第1ゲート絶縁層表面に施された上記配向処理に沿って配向した重合性の液晶性化合物を、その配向状態を保持した状態で重合してなる層である。この重合反応により、上記液晶性化合物の配向状態が固定化される(すなわち重合固定化される)。
重合性の液晶性化合物は、液晶性化合物に重合性基が導入された構造を有する。重合性基に特に制限はなく、例えば、エチレン性不飽和基(すなわち、臭素価やヨウ素価の測定で消費されるエチレン結合(炭素-炭素二重結合)を有する基を意味する。ベンゼンのような芳香族性を示す不飽和基ではない。)、エポキシ基、オキセタン基等の環状エーテル基等を広く採用することができる。エチレン性不飽和基は、アクリロイル基、メタクリロイル基、アクリルアミド基、ビニル基、スチリル基等として導入されていることが好ましい。重合性の液晶性化合物が有する重合性基の数に特に制限はない。例えば、1分子中の重合性基の数が1~6の液晶性化合物を用いることができる。重合性の液晶性化合物1分子中の重合性基の数は1~5がより好ましく、1~3がさらに好ましい。
本発明に用いる重合性の液晶性化合物は、ディスコティック液晶性化合物(円盤状液晶性化合物とも称する)でもよいし、棒状液晶性化合物でもよい。
本発明において、第2ゲート絶縁層の形成には、重合性のディスコティック液晶性化合物を用いることができる。重合性のディスコティック液晶性化合物としては、従来公知のディスコティック液晶性化合物に重合性基を導入した形態の化合物を用いることができる。ディスコティック液晶性化合物は様々な文献(C.Destrade et al.,Mol.Crysr.Liq.Cryst.,vol.71,page 111(1981);日本化学会編、季刊化学総説、No.22、液晶の化学、第5章、第10章第2節(1994);B.Kohne et al.,Angew.Chem.Soc.Chem.Comm.,page 1794(1985);J.Zhang et al.,J.Am.Chem.Soc.,vol.116,page 2655(1994))に記載されている。ディスコティック液晶性化合物の重合については、例えば、特開平8-27284号公報に記載がある。
本発明において、第2ゲート絶縁層の形成には、重合性の液晶性化合物として、重合性の棒状液晶性化合物を用いることもできる。重合性の棒状液晶性化合物としては、従来公知の棒状液晶性化合物に重合性基を導入した化合物を用いることができる。棒状液晶性化合物としては、アゾメチン類、アゾキシ類、シアノビフェニル類、シアノフェニルエステル類、安息香酸エステル類、シクロヘキサンカルボン酸フェニルエステル類、シアノフェニルシクロヘキサン類、シアノ置換フェニルピリミジン類、アルコキシ置換フェニルピリミジン類、フェニルジオキサン類、トラン類及びアルケニルシクロヘキシルベンゾニトリル類が好ましく用いられる。重合性の棒状液晶性化合物において、1分子中の重合性基の個数は好ましくは1~6個、より好ましくは1~3個である。重合性の棒状液晶性化合物としては、例えば、Makromol.Chem.,190巻、2255頁(1989年)、Advanced Materials 5巻、107頁(1993年)、米国特許第4683327号明細書、同5622648号明細書、同5770107号明細書、国際公開95/22586号公報、同95/24455号公報、同97/00600号公報、同98/23580号公報、同98/52905号公報、特開平1-272551号公報、同6-16616号公報、同7-110469号公報、同11-80081号公報、及び特開2001-328973号公報に記載の化合物を用いることができる。
また、本明細書において、重合性の液晶性化合物又は重合した液晶性化合物が「水平配向」しているとは、重合性の液晶性化合物又は重合した液晶性化合物が、第2ゲート絶縁層の有機半導体層側表面に対して0~10度の範囲の平均傾斜角で配向していることを意味する。
また、本明細書において、重合性の液晶性化合物又は重合した液晶性化合物が「傾斜配向」しているとは、重合性の液晶性化合物又は重合した液晶性化合物が、第2ゲート絶縁層の有機半導体層側表面に対して10度超80度未満の範囲の平均傾斜角で配向していることを意味する。
本明細書において「平均傾斜角」は、ディスコティック液晶性分子の場合、円盤面と、第2ゲート絶縁層の有機半導体層側表面との平均角度を意味し、棒状液晶性分子の場合、棒状液晶性分子の長軸方向と、第2ゲート絶縁層の有機半導体層側表面との平均角度を意味する。平均傾斜角の最小値は0度であり、最大値は90度である。上記「平均角度」はエリプソメトリーを用いたレタデーションの遅相軸および進相軸の二方向からの入射角依存性をフィッティングすることで算出することができる。
また、重合性の液晶性化合物が円盤状液晶性化合物である場合、第2ゲート絶縁層を形成する際に、第1ゲート絶縁層上において、重合性の液晶性化合物の液晶相がディスコチックネマチック相となり、この配向状態が重合反応により固定化されることが好ましい。
空気界面(有機半導体層が形成される側表面)に偏在する添加剤と、第2ゲート絶縁層を構成する重合性の液晶性化合物の組み合わせを選択することにより、より効率的に、重合性の液晶性化合物を第2ゲート絶縁層の有機半導体層側表面に対して、傾斜配向、垂直配向又は水平配向させることができる。
ハジキ防止剤は、塗布液を塗布する際のハジキを防止するための材料である。ハジキ防止剤として使用する化合物としては、本発明の液晶性組成物の傾斜角変化や配向を著しく阻害しない限り、特に制限はなく、高分子化合物及び低分子化合物のいずれを用いてもよい。ハジキ防止剤は好ましくはポリマーである。
ハジキ防止剤として用いるポリマーの例は、例えば特開平8-95030号公報に記載がある。ハジキ防止剤として特に好ましいポリマーの例としてはセルロースエステルを挙げることができる。セルロースエステルの例としては、セルロースアセテート、セルロースアセテートプロピオネート、ヒドロキシプロピルセルロースおよびセルロースアセテートブチレートを挙げることができる。
重合性の液晶性化合物の配向を阻害しないように、ハジキ防止目的で使用されるポリマーの塗布液中濃度は、0.1~10質量%とすることが好ましく、0.1~8質量%とすることがより好ましく、0.1~5質量%とすることがさらに好ましい。
重合開始剤は、目的の重合反応により適宜に選択することができ、例えば、光重合開始剤や熱重合開始剤を用いることができる。これらの重合開始剤としては、重合開始剤として従来公知の化合物を用いることができる。重合反応は後述するように、熱により基板等が変形、変質するのを防ぐために光重合反応を採用することが好ましいため、用いる重合開始剤は光重合開始剤が好ましい。光重合開始剤としては、ラジカル重合開始剤及び光カチオン重合開始剤が挙げられる。ラジカル重合開始剤は、液晶性化合物が有する重合性基がエチレン性不飽和基である場合に好適に用いられる。また、液晶性化合物が有する重合性基がエポキシ基、オキセタン基、メチロール基等である場合、光カチオン重合開始剤(好ましくは上述の光酸発生剤)が好適に用いられる。本発明においてはラジカル重合開始剤がより好ましい。
上記光重合開始剤としては、例えば、α-カルボニル化合物(例えば、米国特許第2367661号、同第2367670号の各明細書記載のα-カルボニル化合物)、アシロインエーテル(例えば、米国特許第2448828号明細書記載のアシロインエーテル)、α炭化水素置換芳香族アシロイン化合物(例えば、米国特許第2722512号明細書記載のα炭化水素置換芳香族アシロイン化合物)、多核キノン化合物(例えば、米国特許第3046127号、同第2951758号の各明細書記載の多核キノン化合物)、トリアリールイミダゾールダイマーとp-アミノフェニルケトンとの組み合わせ(例えば、米国特許第3549367号明細書記載のトリアリールイミダゾールダイマーとp-アミノフェニルケトンとの組み合わせ)、アクリジンおよびフェナジン化合物(例えば、特開昭60-105667号公報及び米国特許第4239850号明細書記載のアクリジンおよびフェナジン化合物)およびオキサジアゾール化合物(例えば、米国特許第4212970号明細書記載のオキサジアゾール化合物)等が挙げられる。
塗布液中の光重合開始剤の使用量は、塗布液の固形分中、0.01~20質量%であることが好ましく、0.5~5質量%であることがより好ましい。
第2ゲート絶縁層を形成するための上記塗布液は、重合性モノマーを含有してもよい。重合性モノマーは、重合性の液晶性化合物と相溶性を有し、重合性の液晶性化合物の配向阻害を著しく引き起こさない限り、特に制限はない。液晶性化合物の配向状態をより効果的に固定化するために、重合活性なエチレン性不飽和基、例えばビニル基、ビニルオキシ基、アクリロイル基およびメタクリロイル基などを有する化合物が好ましく用いられる。上記重合性モノマーの塗布液中の含有量は、塗布液中の重合性の液晶性化合物100質量%に対して0.5~50質量%が好ましく、1~30質量%がより好ましい。また重合性基の数が2以上のモノマーを用いると、耐溶剤性を高める効果が期待できるため、特に好ましい。重合性モノマー1分子が有する重合性基の数は2~6が好ましく、2~4がより好ましい。
重合性モノマーの分子量は100~600であることが好ましく、150~400であることがより好ましい。
第2ゲート絶縁層を形成するための上記塗布液に使用する溶媒としては、有機溶媒が好ましく用いられる。この有機溶媒としては、例えば、アミド(例えば、N,N-ジメチルホルムアミド)、スルホキシド(例えば、ジメチルスルホキシド)、ヘテロ環化合物(例えば、ピリジン)、炭化水素(例えば、トルエン、ヘキサン)、アルキルハライド(例えば、クロロホルム、ジクロロメタン)、エステル(例えば、酢酸メチル、酢酸ブチル)、ケトン(例えば、アセトン、メチルエチルケトン、メチルイソブチルケトン、シクロヘキサノン)、エーテル(例えば、テトラヒドロフラン、1,2-ジメトキシエタン)が挙げられる。なかでもアルキルハライド、エステルおよびケトンが好ましい。上記塗布液には2種類以上の有機溶媒を併用してもよい。
第2ゲート絶縁層の形成には、まず、上記の第2ゲート絶縁層を形成するための塗布液を調製し、この塗布液を、表面を配向処理した第1ゲート絶縁層上に塗布し、重合性の液晶性化合物を配向させる。塗布液の塗布は、公知の方法(例えば、スピンコーティング法、ワイヤーバーコーティング法、押し出しコーティング法、ダイレクトグラビアコーティング法、リバースグラビアコーティング法、ダイコーティング法)により実施できる。
塗布液を塗布した後、液晶温度領域まで加熱することで、重合性の液晶性化合物を配向させることができる。液晶温度領域は50℃~200℃が好ましく、70℃~150℃がより好ましい。液晶温度が高い場合は、各種材料の添加量で調整することができる。
第1ゲート絶縁層表面の配向処理に沿って重合性の液晶性化合物を配向させた後、この配向状態を固定化するために、重合性の液晶性化合物(第2ゲート絶縁層を形成するための塗布液が重合性の液晶性化合物とは別に重合性モノマーを含む場合には、重合性の液晶性化合物及び重合性モノマー)を重合させる。この重合反応には、熱重合開始剤を用いる熱重合反応と光重合開始剤を用いる光重合反応と電子線照射による重合反応が含まれるが、熱により支持体等が変形、変質するのを防ぐためにも、光重合反応または電子線照射による重合反応が好ましく、光重合反応がさらに好ましい。光重合反応としてはラジカル重合反応又はカチオン重合反応が好ましく、ラジカル重合反応がより好ましい。
有機半導体層は、半導体性を示し、キャリアを蓄積可能な層である。
有機半導体層は、有機半導体を含有する層であればよい。
有機半導体としては、特に限定されず、有機ポリマー及びその誘導体、低分子化合物等が挙げられる。
本発明において、低分子化合物は、有機ポリマー及びその誘導体以外の化合物を意味する。すなわち、繰り返し単位を有さない化合物をいう。低分子化合物は、このような化合物である限り、分子量は特に限定されるものではない。低分子化合物の分子量は、好ましくは300~2000であり、さらに好ましくは400~1000である。
ZA1及びZA2は、S、O、Se又はTeを表す。
nA1及びnA2は0~3の整数を表す。ただし、nA1及びnA2が同時に0になることはない。
これらの置換基は、さらに置換基を複数有していてもよい。複数有していてもよい置換基としては、上記、RA1~RA6で表される置換基が挙げられる。
ZA1及びZA2は、S、O、Se又はTeを表す。
nA1及びnA2は0~3の整数を表す。ただし、nA1とnA2が同時に0になることはない。
一般式(D)中、XD1及びXD2はNRD9、酸素原子又は硫黄原子を表す。AD1はCRD7又はN原子を表し、AD2はCRD8又はN原子を表し、RD9は水素原子、アルキル基、アルケニル基、アルキニル基又はアシル基を表す。RD1~RD8は水素原子又は置換基を表し、RD1~RD8のうち少なくとも1つが下記一般式(W)で表される置換基である。
一般式(E)中、XE1及びXE2は酸素原子、硫黄原子又はNRE7を表す。AE1及びAE2はCRE8又は窒素原子を表す。RE1~RE8は水素原子又は置換基を表す。RE1~RE8のうち少なくとも1つが下記一般式(W)で表される置換基である。
一般式(G)中、XG1及びXG2はNRG9、酸素原子又は硫黄原子を表す。AG1はCRG7又はN原子を表す。AG2はCRG8又はN原子を表す。RG9は水素原子、アルキル基、アルケニル基、アルキニル基、アシル基、アリール基又はヘテロアリール基を表す。RG1~RG8は水素原子又は置換基を表す。RG1~RG8のうち少なくとも1つが下記一般式(W)で表される置換基である。
一般式(K)中、XK1及びXK2は酸素原子、硫黄原子、セレン原子又はNRK9を表す。XK3及びXK4は酸素原子、硫黄原子又はセレン原子を表す。XK1、XK2、XK3及びXK4は好ましくは硫黄原子を表す。RK1~RK9は水素原子又は置換基を表す。RK1~RK9のうち少なくとも1つが下記一般式(W)で表される置換基である。
一般式(L)中、XL1及びXL2は酸素原子、硫黄原子又はNRL11を表す。XL1及びXL2は好ましくは酸素原子又は硫黄原子を表す。RL1~RL11は水素原子又は置換基を表し、RL1~RL11のうち少なくとも1つが下記一般式(W)で表される置換基である。
一般式(N)中、XN1及びXN2は酸素原子、硫黄原子、セレン原子又はNRN13を表す。XN1及びXN2は好ましくは硫黄原子を表す。RN1~RN13は水素原子又は置換基を表す。RN1~RN13のうち少なくとも1つは下記一般式(W)で表される置換基である。
一般式(P)中、XP1及びXP2は酸素原子、硫黄原子、セレン原子又はNRP13を表す。XP1及びXP2は好ましくは硫黄原子を表す。RP1~RP13は水素原子又は置換基を表す。RP1~RP13のうち少なくとも1つは下記一般式(W)で表される置換基である。
一般式(R)中、XR1、XR2及びXR3は酸素原子、硫黄原子、セレン原子又はNRR9を表す。XR1、XR2及びXR3は好ましくは硫黄原子を表す。RR1~RR9は水素原子又は置換基を表す。RR1~RR9のうち少なくとも1つは下記一般式(W)で表される置換基である。
一般式(T)中、XT1、XT2、XT3、及びXT4は酸素原子、硫黄原子、セレン原子又はNRT7を表す。XT1、XT2、XT3及びXT4は好ましくは硫黄原子を表す。RT1~RT7は水素原子又は置換基を表す。RT1~RT7のうち少なくとも1つは下記一般式(W)で表される置換基である。
また、ヘテロアリール基は、RA1~RA6の置換基で説明したヘテロアリール基と同義である。
*はRwとの結合位置または一般式(L-1)~(L-25)の波線部分との結合位置を表す。
一般式(L-13)におけるmは4を表し、一般式(L-14)及び(L-15)におけるmは3を表し、一般式(L-16)~(L-20)におけるmは2を表し、(L-22)におけるmは6を表す。
一般式(L-1)、(L-2)、(L-6)及び(L-13)~(L-19)及び(L-21)~(L-24)におけるRLZはそれぞれ独立に水素原子又は置換基を表し、一般式(L-1)及び(L-2)中のRLZはそれぞれLに隣接するRWと結合して縮合環を形成してもよい。
RNは水素原子又は置換基を表し、Rsiはそれぞれ独立に水素原子、アルキル基、アルケニル基又はアルキニル基を表す。
本発明では、主鎖が炭素数N個の置換又は無置換のアルキル基が置換基の末端に存在する場合は、置換基の末端から可能な限りの連結基を含めた上で一般式(W)における-L-RWと解釈することとし、一般式(W)における-RW単独とは解釈しない。具体的には「一般式(W)におけるLに相当する(L-1)1個」と「一般式(W)におけるRWに相当する主鎖が炭素数N-1個の置換又は無置換のアルキル基」とが結合した置換基として解釈する。例えば、炭素数8のアルキル基であるn-オクチル基が置換基の末端に存在する場合、2個のRLZが水素原子である(L-1)1個と、炭素数7のn-ヘプチル基とが結合した置換基として解釈する。また、一般式(W)で表される置換基が炭素数8のアルコキシ基である場合、-O-である一般式(L-4)で表される連結基1個と、2個のRLZが水素原子である(L-1)で表される連結基1個と、炭素数7のn-ヘプチル基とが結合した置換基として解釈する。
一方、本発明では、オキシエチレン基、オキシエチレン単位の繰り返し数vが2以上のオリゴオキシエチレン基、シロキサン基、ケイ素原子数が2以上のオリゴシロキサン基、あるいは、置換又は無置換のトリアルキルシリル基が置換基の末端に存在する場合は、置換基の末端から可能な限りの連結基を含めた上で、一般式(W)におけるRW単独と解釈する。例えば、-(OCH2CH2)-(OCH2CH2)-(OCH2CH2)-OCH3基が置換基の末端に存在する場合、オキシエチレン単位の繰り返し数vが3のオリゴオキシエチレン基単独の置換基として解釈する。
RNとしては、置換基RC~RTが採りうる置換基として例示したものを挙げることができる。その中でもRNとしては水素原子又はメチル基が好ましい。
Rsiは、アルキル基であることが好ましい。Rsiがとり得るアルキル基としては特に制限はないが、Rsiがとり得るアルキル基の好ましい範囲はRWがシリル基である場合に該シリル基がとり得るアルキル基の好ましい範囲と同様である。Rsiがとり得るアルケニル基としては特に制限はないが、置換又は無置換のアルケニル基が好ましく、分枝アルケニル基であることがより好ましく、該アルケニル基の炭素数は2~3であることが好ましい。Rsiがとり得るアルキニル基としては特に制限はないが、置換又は無置換のアルキニル基が好ましく、分枝アルキニル基であることがより好ましく、該アルキニル基の炭素数は2~3であることが好ましい。
化学的安定性、キャリア輸送性の観点から一般式(L-1)で表される2価の連結基を含む2価の連結基であることが特に好ましく、一般式(L-1)で表される2価の連結基であることがより特に好ましく、Lが一般式(L-18)及び(L-1)で表される2価の連結基であり、(L-1)を介してRWと結合し、RWが置換又は無置換のアルキル基であることがさらにより特に好ましく、Lが一般式(L-18A)及び(L-1)で表される2価の連結基であり、(L-1)を介してRWと結合し、RWが置換又は無置換のアルキル基であることがさらにより特に好ましい。
一般式(W)において、RWに隣接するLが一般式(L-2)及び(L-4)~(L-25)で表される2価の連結基である場合は、RWは置換又は無置換のアルキル基であることがより好ましい。
一般式(W)において、RWに隣接するLが一般式(L-3)で表される2価の連結基である場合は、RWは置換又は無置換のアルキル基、置換又は無置換のシリル基であることが好ましい。
RWがアルキル基を表す場合、直鎖アルキル基でも、分枝アルキル基でも、環状アルキル基でもよいが、直鎖アルキル基であることが、分子の直線性が高まり、キャリア移動度を高めることができる観点から好ましい。
これらの中でも、一般式(W)におけるRWとLの組み合わせとしては、一般式(C)~(T)のLが一般式(L-1)で表される2価の連結基であり、かつ、RWが直鎖の炭素数4~17のアルキル基であるか;あるいは、Lが一般式(L-3)、(L-13)又は(L-18)のいずれか1つで表される2価の連結基と一般式(L-1)で表される2価の連結基が結合した2価の連結基であり、かつ、RWが直鎖のアルキル基であることが、キャリア移動度を高める観点から好ましい。
一方、有機溶媒への溶解度を高める観点からは、RWが分枝アルキル基であることが好ましい。
L及びRWに含まれる炭素数の合計は5~14であることが好ましく、6~14であることがより好ましく、6~12であることが特に好ましく、8~12であることがより特に好ましい。
一般式(C)で表される化合物においては、RC1、RC2、RC3、RC6のいずれかが一般式(W)で表される基であることが好ましく、RC1とRC2との両方又はRC3とRC6の両方が一般式(W)で表される基であることがより好ましい。
一般式(D)で表される化合物においては、RD6が一般式(W)で表される基であることが好ましく、RD5とRD6との両方が一般式(W)で表される基であることがより好ましい。
一般式(E)で表される化合物においては、RE6が一般式(W)で表される基であることが好ましく、RE5とRE6との両方が一般式(W)で表される基であることがより好ましい。また、RE5及びRE6が一般式(W)で表される基以外の置換基である場合、2つのRE7が一般式(W)で表される基であるのも好ましい。
一般式(G)で表される化合物においては、RG5又はRG6が一般式(W)で表される基であることが、キャリア移動度を高め、有機溶媒への溶解性を高める観点から好ましい。
一般式(H)で表される化合物においては、RH4又はRH6が一般式(W)で表される基であるのが好ましく、RH4又はRH6、及び、RH3又はRH5が一般式(W)で表される基であるのがより好ましい。
一般式(K)で表される化合物においては、RK7が一般式(W)で表される基であるのが好ましく、RK7とRK3との両方が一般式(W)で表される基であるのがより好ましい。
一般式(L)で表される化合物においては、RL2、RL3、RL6及びRL7のうち少なくとも一つが一般式(W)で表される基であるのがより好ましい。
一般式(N)で表される化合物においては、RN3が一般式(W)で表される基であるのが好ましく、RN3とRN9との両方が一般式(W)で表される基であるのがより好ましい。
一般式(P)で表される化合物においては、RP2又はRP3が一般式(W)で表される基であるのが好ましく、RP2とRP8との両方又はRP3とRP9との両方が一般式(W)で表される基であるのがより好ましい。
一般式(R)で表される化合物においては、RR2が一般式(W)で表される基であるのが好ましく、RR2とRR7との両方が一般式(W)で表される基であるのがより好ましい。
一般式(T)で表される化合物においては、RT2が一般式(W)で表される基であるのが好ましく、RT2とRT5との両方が一般式(W)で表される基であるのがより好ましい。
一方で、薄膜の膜質安定性の観点からは、分子量は300以上であることが好ましく、350以上であることがより好ましく、400以上であることがさらに好ましい。
ポリチオフェン及びその誘導体としては、特に限定されないが、例えば、ポリチオフェンにヘキシル基を導入したポリ-3-ヘキシルチオフェン(P3HT)、ポリエチレンジオキシチオフェン、ポリ(3,4-エチレンジオキシチオフェン)/ポリスチレンスルホン酸(PEDOT/PSS)等が挙げられる。
また、これらのポリマーと同じ繰返し単位を有するオリゴマー(例えば、オリゴチオフェン)を挙げることもできる。
このような高分子化合物としては、一般式(C)~(T)で表される化合物が少なくとも1つ以上のアリーレン基、ヘテロアリーレン基(チオフェン、ビチオフェン等)を介して繰り返し構造を示すπ共役ポリマーや、一般式(C)~(T)で表される化合物が高分子主鎖に側鎖を介して結合したペンダント型ポリマーが挙げられる。高分子主鎖としては、ポリアクリレート、ポリビニル、ポリシロキサン等が好ましく、側鎖としては、アルキレン基、ポリエチレンオキシド基等が好ましい。ペンダント型ポリマーの場合、高分子主鎖は置換基RC~RTの少なくとも1つが重合性基由来の基を有し、これが重合してなるものであってもよい。
本発明のOTFTにおいて、ソース電極は、配線を通じて外部から電流が流入する電極である。また、ドレイン電極は、配線を通じて外部に電流を送り出す電極であり、通常、上記半導体層に接して設けられる。
ソース電極及びドレイン電極の材料としては、従来の有機薄膜トランジスタに用いられている導電性材料を用いることができ、例えば、上記ゲート電極で説明した導電性材料等が挙げられる。
特に、ゲート絶縁層がエッチング液や剥離液に対する耐性に優れていることから、ソース電極及びドレイン電極はエッチング法でも好適に形成することができる。エッチング法は、導電性材料を成膜した後に不要部分をエッチングにより除去する方法である。エッチング法によりパターニングすると、レジスト除去時に下地に残った導電性材料の剥がれ、レジスト残渣や除去された導電性材料の下地への再付着を防止でき、電極エッジ部の形状に優れる。この点で、リフトオフ法よりも好ましい。
ソース電極とドレイン電極との間の間隔(チャネル長)は、任意であるが、100μm以下が好ましく、50μm以下が特に好ましい。また、チャネル幅は、5000μm以下が好ましく、1000μm以下が特に好ましい。
本発明のOTFTは、オーバーコート層を有していてもよい。オーバーコート層は、通常、OTFTの表面に保護層として形成される層である。単層構造でも多層構造でもよい。
オーバーコート層は、有機系のオーバーコート層でも無機系のオーバーコート層でもよい。
有機系のオーバーコート層を形成する材料としては、特に限定されないが、例えば、ポリスチレン、アクリル樹脂、ポリビニルアルコール、ポリオレフィン、ポリイミド、ポリウレタン、ポリアセナチレン、エポキシ樹脂等の有機ポリマー、及び、これらの有機ポリマーに架橋性基や撥水基等を導入した誘導体等が挙げられる。これらの有機ポリマーやその誘導体は、架橋成分、フッ素化合物、シリコン化合物等と併用することもできる。
無機系のオーバーコート層を形成する材料としては、特に限定されないが、酸化ケイ素、酸化アルミニウム等の金属酸化物、窒化ケイ素等の金属窒化物等が挙げられる。
これらの材料は、1種を用いても、2種以上を任意の組み合わせ及び比率で併用してもよい。
例えば、有機系のオーバーコート層は、例えば、その下地となる層に、オーバーコート層となる材料を含む溶液を塗布後に乾燥させる、オーバーコート層となる材料を含む溶液を塗布、乾燥後に露光、現像してパターニングする等の方法により形成することができる。なお、オーバーコート層のパターニングは、印刷法やインクジェット法等により直接形成することもできる。また、オーバーコート層のパターニング後に、露光や加熱することにより、オーバーコート層を架橋させてもよい。
一方、無機系のオーバーコート層は、スパッタリング法、蒸着法等の乾式法やゾルゲル法のような湿式法により形成することができる。
本発明のOTFTは、上記以外の層や部材を設けてもよい。
その他の層又は部材としては、例えば、バンク等が挙げられる。バンクは、インクジェット法等により半導体層やオーバーコート層等を形成するときに、吐出液を所定の位置に塞き止める目的等で用いられる。このため、バンクには、通常、撥液性がある。バンクの形成方法としては、フォトリソグラフィー法等によりパターニングした後にフッ素プラズマ法等の撥液処理を施す方法、フッ素化合物等の撥液成分を含む感光性組成物等を硬化させる方法等が挙げられる。
本発明の有機薄膜トランジスタの場合、ゲート絶縁層が有機層であることから、後者の撥液成分を含む感光性組成物を硬化させる方法が、ゲート絶縁層が撥液処理の影響を受ける可能性がなく、好ましい。なお、バンクを用いずに下地に撥液性のコントラストを持たせてバンクと同じ役割を持たせる技術を用いてもよい。
本発明のOTFTは好ましくは表示パネルに搭載して使用される。表示パネルとしては、例えば、液晶パネル、有機ELパネル、電子ペーパーパネル等が挙げられる。
<第1ゲート絶縁層>
図1(A)に示す形態のボトムゲート・ボトムコンタクト型のOTFTを作製した。基板6として厚さ1.1mmのガラス基板を用い、その上に厚さ70nmのITO膜を形成してゲート電極とした。このゲート電極を覆うように、N-メチル-2-ピロリドンを用いて2wt%に希釈したポリイミド系配向膜溶液(SE-130、ポリイミド前駆体溶液、日産化学社製)を塗布し、100℃で10分間乾燥した。その後、230℃で2時間イミド化を行うことでポリイミド膜(ゲート電極の第1絶縁層側表面からの厚さ:100nm)を得た。この膜表面にコットン布を用いてラビング処理(配向処理)を行い、第1ゲート絶縁層を形成した。
下表に示す重合性の液晶性化合物(液晶性モノマー)と、下表に示す重合開始剤とを、メチルエチルケトンに溶解して固形分濃度10wt%の塗布液を調製した。塗布液中、液晶性モノマーの100質量部に対して、重合開始剤の含有量を3質量部とした。また、塗布液の一部は、下表に示す界面活性剤(空気界面配向制御剤)を、塗布液中の液晶性モノマーの100質量部に対して0.5質量部となるように添加した。
得られた塗布液を第1ゲート絶縁層のラビング処理表面にスピンコートした(2000回転、10秒)。続いて、110℃に加温して重合性液晶性モノマーの配向を熟成させた。その後、60℃、130℃又は140℃の温度下で紫外線を照射し(積算照射量:500mJ/cm2、10秒)液晶性モノマーを重合して配向状態を固定化することで、第2ゲート絶縁層(厚さ220nm)を形成した。なお、塗布液中に界面活性剤を添加したものは、重合反応後に第2ゲート絶縁層をメチルエチルケトン溶液に浸漬して超音波洗浄し、第2ゲート絶縁層から界面活性剤を除去した。
なお、下表中、第2ゲート絶縁層形成の際の「重合反応前の液晶相の状態」は、偏光顕微鏡を用いて光学組織を観察することで評価した。また、重合反応後(重合固定化後)における第2ゲート絶縁層の「有機半導体層側表面の配向状態」は、セナルモン法によりレタデーションを測定することで評価した。
上記で調製した第2ゲート絶縁層上に、金を真空蒸着し、チャネル長50μm、チャネル幅10mm、厚さ50nmのソース電極及びドレイン電極を作製した。
下表に示す有機半導体を0.5wt%濃度で溶解したトルエン溶液を調製した。この溶液をソース-ドレイン電極間にスピンコート(500回転で20秒及び1000回転で20秒)し、乾燥後の層厚が150nmとなるように有機半導体層を形成し、OTFTを得た。
厚さ1.1mmのガラス基板上に、N-メチル-2-ピロリドンを用いて2wt%に希釈したポリイミド系配向膜溶液(SE-130、ポリイミド前駆体溶液、日産化学社製)を塗布し、100℃で10分間乾燥した。その後、230℃で2時間イミド化を行うことでポリイミド膜(厚さ100nm)を形成した。このポリイミド膜表面にコットン布を用いてラビング処理(配向処理)を行い、このラビング処理表面の一部にゲート電極として厚さ70nmのITO膜を形成した。その後、ゲート電極を覆うように、上記X1の形成と同様にして第2ゲート絶縁層を形成した。
上記第2ゲート絶縁層上に、上記製造例1と同様にしてソース電極、ドレイン電極、有機半導体層を形成し、OTFTを得た。得られたOTFTをOTFT Zt1と呼ぶ。
上記製造例1において、液晶性モノマーに代えて下記繰り返し単位を有する高分子液晶性化合物(重量平均分子量:9300)を用い、80℃で配向熟成を行い、且つ、紫外線照射により重合反応を行わなかったこと以外は、製造例1と同様にしてOTFTを製造した。下記高分子液晶性化合物は60~90℃にネマチック相を示す。
上記各製造例で得られたOTFTについて、キャリア移動度(cm2/Vs)を下記方法により評価した。
ソース電極-ドレイン電極間に-40Vの電圧を印加し、ゲート電圧を40V~-40Vの範囲で変化させ、ドレイン電流Idを表わす下記式を用いてキャリア移動度μを算出した。
Id=(w/2L)μCi(Vg-Vth)2
(式中、Lはゲート長、wはゲート幅、Ciは絶縁層の単位面積当たりの容量、Vgはゲート電圧、Vthは閾値電圧)
得られたキャリア移動度を下記評価基準に基づき評価した。実用上、キャリア移動度は評価Aであることが求められる。
A:キャリア移動度が0.1以上
B:キャリア移動度が0.01以上0.1未満
C:キャリア移動度が0.01未満
結果を下記表2に示す。
また、第1ゲート絶縁層の配向処理した表面上にゲート電極を形成し、このゲート電極を覆うように第2ゲート絶縁層を設けて製造したZt1のOTFTは、キャリア移動度が大幅に低下した。これは、Zt1のOTFTにおいては、第1ゲート絶縁層の配向処理表面と第2ゲート絶縁層との間の一部にゲート電極が存在するため、第1ゲート絶縁層表面の配向処理による第2ゲート絶縁層の配向規制力が十分に働かず、その結果、第2ゲート絶縁層、さらにはその上に形成された有機半導体層における有機半導体を十分に配向させることができなかったためと考えられる。
また、第2ゲート絶縁層を形成する液晶性高分子化合物が配向状態にあるが、配向状態が固定化されていないZt2のOTFTもまた、キャリア移動度に劣る結果となった。これは、配向熟成温度が低いために配向状態が不十分であったことが原因の1つと考えられる。
上記各製造例で得られたOTFTを140℃で30分間加熱した後、上記試験例1と同様にしてキャリア移動度を算出した。得られたキャリア移動度に基づき、下記評価基準によりOTFTの耐熱性を評価した。実用上、耐熱性は評価Aであることが求められる。
A:[加熱後のキャリア移動度]/[加熱前のキャリア移動度]≧0.9
B:0.6≦[加熱後のキャリア移動度]/[加熱前のキャリア移動度]<0.9
C:[加熱後のキャリア移動度]/[加熱前のキャリア移動度]<0.6
結果を下記表3に示す。
これに対し本発明に包含されるXt1~Xt4及びYt1~Yt3は、140℃で30分間もの間処理しても、キャリア移動度が実質的に低下せず、耐熱性に優れることが示された。
2 ゲート絶縁層
2A 第1ゲート絶縁層
2B 第2ゲート絶縁層
2a 第1ゲート絶縁層表面(配向処理された表面)
3 ソース電極
4 ドレイン電極
5 ゲート電極
6 基板
Claims (7)
- 基板と、該基板上に設けられたゲート電極と、該ゲート電極を覆って設けられた第1ゲート絶縁層と、第1ゲート絶縁層上に設けられた第2ゲート絶縁層と、第2ゲート絶縁層上に設けられた有機半導体層と、該有機半導体層に接して設けられ、該有機半導体層を介して連結されたソース電極及びドレイン電極とを有するボトムゲート型有機薄膜トランジスタであって、
前記第1ゲート絶縁層の前記第2ゲート絶縁層側表面には配向処理が施され、
前記第2ゲート絶縁層が、前記配向処理に沿って配向させた重合性の液晶性化合物を該配向状態で重合固定化してなる層である、有機薄膜トランジスタ。 - 前記重合性の液晶性化合物が棒状液晶性化合物であり、前記配向処理に沿って配向させた重合性の液晶性化合物の液晶相がネマチック相又はスメクチック相である、請求項1に記載の有機薄膜トランジスタ。
- 前記重合性の液晶性化合物が円盤状液晶性化合物であり、前記配向処理に沿って配向させた重合性の液晶性化合物の液晶相がディスコチックネマチック相である、請求項1に記載の有機薄膜トランジスタ。
- 第2ゲート絶縁層の前記有機半導体層側表面において、重合固定化された液晶性化合物が水平配向している、請求項1~3のいずれか1項に記載の有機薄膜トランジスタ。
- 第2ゲート絶縁層の前記有機半導体層側表面において、重合固定化された液晶性化合物が垂直配向している、請求項1~3のいずれか1項に記載の有機薄膜トランジスタ。
- 第2ゲート絶縁層の前記有機半導体層側表面において、重合固定化された液晶性化合物が傾斜配向している、請求項1~3のいずれか1項に記載の有機薄膜トランジスタ。
- 第1ゲート絶縁層が、ポリイミド、ポリビニルフェノール、ノボラック樹脂、ポリスチレン、ポリ(メタ)アクリレート、エポキシ樹脂、エポキシ(メタ)アクリレート、ポリビニルアルコール、フッ素樹脂、ポリシクロオレフィン、ポリシルセスキオキサン、ポリシロキサン、ポリエステル、ポリエーテルスルホン、及びポリエーテルケトンから選ばれる有機高分子化合物を含有する、請求項1~6のいずれか1項に記載の有機薄膜トランジスタ。
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CN108766629B (zh) * | 2018-05-29 | 2020-11-24 | 重庆大学 | 一种提高柔性透明导电薄膜密着性的方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005072200A (ja) * | 2003-08-22 | 2005-03-17 | Canon Inc | 電界効果型有機トランジスタ |
JP2012051862A (ja) * | 2010-09-03 | 2012-03-15 | Hiroshima Univ | 液晶性化合物、配向性単分子膜、及び、配向性単分子膜の製造方法 |
JP2012253132A (ja) * | 2011-06-01 | 2012-12-20 | Fujifilm Corp | 有機薄膜、その製造方法、及びそれを有する有機トランジスタ |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3043836B2 (ja) | 1991-05-24 | 2000-05-22 | 日新製鋼株式会社 | 非金属イオン型帯電防止性塩化ビニルシ−トの製造方法 |
US6326640B1 (en) * | 1996-01-29 | 2001-12-04 | Motorola, Inc. | Organic thin film transistor with enhanced carrier mobility |
CN1702877A (zh) * | 2003-07-17 | 2005-11-30 | 精工爱普生株式会社 | 薄膜晶体管及其制造方法、电路、显示装置和电子机器 |
CN100431190C (zh) * | 2004-09-01 | 2008-11-05 | 复旦大学 | 一种有机场效应管取向层及其制备方法和应用 |
JP4349307B2 (ja) * | 2005-03-16 | 2009-10-21 | セイコーエプソン株式会社 | 有機半導体装置の製造方法、有機半導体装置、電子デバイスおよび電子機器 |
JP2007027525A (ja) * | 2005-07-20 | 2007-02-01 | Sony Corp | 半導体装置の製造方法、および半導体装置、ならびに絶縁膜の形成方法 |
US9461257B2 (en) * | 2012-03-01 | 2016-10-04 | Sumitomo Chemical Company, Limited | Electronic device insulating layer, and method for producing electronic device insulating layer |
-
2014
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005072200A (ja) * | 2003-08-22 | 2005-03-17 | Canon Inc | 電界効果型有機トランジスタ |
JP2012051862A (ja) * | 2010-09-03 | 2012-03-15 | Hiroshima Univ | 液晶性化合物、配向性単分子膜、及び、配向性単分子膜の製造方法 |
JP2012253132A (ja) * | 2011-06-01 | 2012-12-20 | Fujifilm Corp | 有機薄膜、その製造方法、及びそれを有する有機トランジスタ |
Non-Patent Citations (1)
Title |
---|
See also references of EP3116029A4 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022078193A (ja) * | 2016-09-14 | 2022-05-24 | ダイキン工業株式会社 | 分枝含フッ素化合物 |
US11680037B2 (en) | 2016-09-14 | 2023-06-20 | Daikin Industries, Ltd. | Branched fluorine-containing compound |
JP2020537674A (ja) * | 2017-10-19 | 2020-12-24 | メルク・パテント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングMerck Patent GmbH | ジベンゾフランおよびジベンゾチオフェン |
JP7230018B2 (ja) | 2017-10-19 | 2023-02-28 | メルク・パテント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | ジベンゾフランおよびジベンゾチオフェン |
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