WO2015129892A1 - Procédé de fabrication d'un élément électroluminescent organique et dispositif de fabrication - Google Patents
Procédé de fabrication d'un élément électroluminescent organique et dispositif de fabrication Download PDFInfo
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- WO2015129892A1 WO2015129892A1 PCT/JP2015/055974 JP2015055974W WO2015129892A1 WO 2015129892 A1 WO2015129892 A1 WO 2015129892A1 JP 2015055974 W JP2015055974 W JP 2015055974W WO 2015129892 A1 WO2015129892 A1 WO 2015129892A1
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- extraction electrode
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- light emitting
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 85
- 239000000758 substrate Substances 0.000 claims abstract description 157
- 238000000034 method Methods 0.000 claims abstract description 92
- 239000010410 layer Substances 0.000 claims description 304
- 238000000605 extraction Methods 0.000 claims description 173
- 238000007789 sealing Methods 0.000 claims description 65
- 239000011241 protective layer Substances 0.000 claims description 60
- 238000005401 electroluminescence Methods 0.000 claims description 10
- 238000009413 insulation Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 31
- 239000010408 film Substances 0.000 description 25
- -1 polyethylene terephthalate Polymers 0.000 description 23
- 229920005989 resin Polymers 0.000 description 14
- 239000011347 resin Substances 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000007740 vapor deposition Methods 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 229920000139 polyethylene terephthalate Polymers 0.000 description 7
- 239000005020 polyethylene terephthalate Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 239000004698 Polyethylene Substances 0.000 description 5
- 229920000573 polyethylene Polymers 0.000 description 5
- 239000004743 Polypropylene Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 150000002894 organic compounds Chemical class 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229920001707 polybutylene terephthalate Polymers 0.000 description 4
- 229920001155 polypropylene Polymers 0.000 description 4
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000011112 polyethylene naphthalate Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229920005992 thermoplastic resin Polymers 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910020286 SiOxNy Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229920001807 Urea-formaldehyde Polymers 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910001872 inorganic gas Inorganic materials 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920005749 polyurethane resin Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229920006337 unsaturated polyester resin Polymers 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical class OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 229920006242 ethylene acrylic acid copolymer Polymers 0.000 description 1
- 229920005648 ethylene methacrylic acid copolymer Polymers 0.000 description 1
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- QCTJRYGLPAFRMS-UHFFFAOYSA-N prop-2-enoic acid;1,3,5-triazine-2,4,6-triamine Chemical class OC(=O)C=C.NC1=NC(N)=NC(N)=N1 QCTJRYGLPAFRMS-UHFFFAOYSA-N 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/162—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using laser ablation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/822—Cathodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
Definitions
- the present invention relates to a method of manufacturing an organic electroluminescence element and a manufacturing apparatus thereof.
- organic EL elements The mainstream of current organic electroluminescence elements (hereinafter sometimes referred to as “organic EL elements”) is a form in which a light emitting element is formed on a glass substrate.
- organic EL elements When an organic EL element is formed on a glass substrate, it is formed by laminating various functional films by using a single glass substrate to move between various film forming apparatuses with a robot or the like.
- a film-formation process in a roll shape is used when a functional film is formed on the entire surface, and since it can be continuously processed, it is used as an efficient and highly productive process method. Therefore, even when manufacturing an organic EL element, if a film forming method in a roll shape can be applied, the productivity is good, and it is possible to manufacture a large amount at a low cost. It is being advanced.
- Patent Document 1 discloses a method of forming a pattern using a pattern forming mask that moves in synchronization with a support that is continuously conveyed.
- Patent Document 2 discloses a method of forming a strip-shaped pattern thin film by using a wire-shaped mask while moving it on a strip-shaped substrate that runs continuously.
- Patent Document 3 discloses a method for finely patterning an organic EL element using a laser ablation method. After the formation of the cathode / organic compound layer / anode structure, laser beam irradiation is performed from the cathode side to perform fine processing.
- Patent Document 1 it is possible to form an arbitrary pattern shape, but positioning and the like are difficult when forming a multilayer film. Further, in the method disclosed in Patent Document 2, it is difficult to form a pattern in a direction orthogonal to the transport direction, and the pattern shape is limited.
- Patent Document 3 is not limited as in Patent Document 1 and Patent Document 2, but does not disclose a method of forming the anode extraction electrode and the cathode extraction electrode in a specific pattern shape.
- An object of the present invention is to produce an organic EL device capable of continuously and easily forming a pattern having a high degree of freedom when forming a pattern (shape, position) on a substrate that is continuously conveyed. It is to provide a method and a manufacturing apparatus thereof.
- the inventors of the present invention have studied about the solution of the above-mentioned problem, and can solve the above-mentioned problem by combining the process of forming each layer of the organic EL element and the process of forming a pattern by a laser. I found out.
- the present invention has the following configuration.
- a first step of forming a patterned anode on the substrate; a second step of forming a patterned anode extraction electrode and a patterned cathode extraction electrode on the substrate; and part of the anode extraction electrode A third step of forming a patterned insulating layer on the substrate, a fourth step of forming an organic light emitting layer on the substrate, the anode, the anode extraction electrode, the cathode extraction electrode, and the insulation layer; A fifth step of removing a part of the organic light emitting layer on the cathode extraction electrode and a part of the organic light emitting layer on the insulating layer by a laser; the organic light emitting layer; a cathode from which the organic light emitting layer has been removed by the laser A sixth step of forming a cathode on the extraction electrode and the insulating layer from which the organic light emitting layer has been removed by the laser; a seventh step of forming at least one of a sealing layer and a protective layer on the cathode;
- a first step of forming a patterned anode on the substrate; a second step of forming a patterned anode extraction electrode and a patterned cathode extraction electrode on the substrate; and part of the anode extraction electrode A third step of forming a patterned insulating layer on the substrate, a fourth step of forming an organic light emitting layer on the substrate, the anode, the anode extraction electrode, the cathode extraction electrode, and the insulation layer; A fifth step of removing a part of the organic light emitting layer on the cathode extraction electrode by a laser, and a sixth step of forming a cathode on the organic emission layer and the cathode extraction electrode from which the organic light emission layer has been removed by the laser.
- a device for forming a patterned anode on a substrate, a device for forming a patterned anode extraction electrode and a patterned cathode extraction electrode on the substrate, and a device for forming an organic light emitting layer on the substrate A device for removing a part of the organic light emitting layer by a laser, a device for forming a cathode on the organic light emitting layer, a device for forming a sealing layer on the substrate, and a protective layer on the substrate.
- Production of an organic electroluminescent element comprising at least one of devices to be formed and a device for removing at least one of the organic light emitting layer, the cathode, the sealing layer and the protective layer on the substrate by a laser apparatus.
- a pattern can be continuously formed with a high degree of freedom when a pattern is formed on a substrate that is continuously conveyed.
- FIG. 1 is a schematic plan view of an organic EL element according to a first embodiment of the present invention and a schematic cross-sectional view of an extraction electrode portion thereof.
- An organic EL device manufacturing apparatus includes an apparatus for forming a patterned anode on a substrate, a patterned anode extraction electrode and a patterned cathode extraction electrode on the substrate.
- FIG. 1A to FIG. 1C are schematic cross-sectional views of an organic EL element manufacturing apparatus according to the first embodiment of the present invention.
- the organic EL element manufacturing apparatus 100 according to the first embodiment includes a chamber 101 provided with a device for feeding out a long substrate, a chamber 102 provided with a device for forming an organic light emitting layer on the substrate, and a part of the organic light emitting layer.
- a chamber 103 having a device for removing by a laser, a chamber 104 having a device for forming a cathode on the organic light emitting layer, a chamber 105 having a device for forming a sealing layer on the substrate, and a protective layer on the substrate.
- a chamber 106 having an apparatus for forming and an apparatus for winding the substrate obtained, a chamber 107 having an apparatus for removing part of the organic light emitting layer, cathode, sealing layer, and protective layer on the substrate with a laser; And a chamber 108 provided with a device for cutting the sheet.
- an apparatus for forming a patterned anode on a substrate which is related to the first to third steps of the method of manufacturing an organic EL element according to the first embodiment of the present invention described later, and a pattern formed on the substrate.
- the apparatus for forming the anode extraction electrode and the patterned cathode extraction electrode and the apparatus for forming the patterned insulating layer on the substrate are not shown. These three devices are devices corresponding to the previous stage of the device shown in FIG.
- the chamber 105 in FIG. 1A shows both an apparatus for forming a sealing layer on a substrate, and the chamber 106 shows an apparatus for forming a protective layer on a substrate.
- the chamber 107 of FIG. 1B an apparatus for removing a part of the organic light emitting layer, the cathode, the sealing layer, and the protective layer on the substrate with a laser is illustrated.
- the chamber 107 may be equipped with a device for removing a part of the organic light emitting layer, the cathode, and the sealing layer on the substrate with a laser, or the organic light emitting layer, the cathode, and the protection on the substrate.
- a device for removing a part of the layer with a laser may be provided.
- the chambers 101 to 108 can be evacuated, and can be processed under vacuum or atmospheric pressure as necessary. As will be described later, in the chambers 101 to 106, processing is continuously performed on a long substrate, and it is preferable that each chamber be in the same temperature, humidity, pressure, and gas environment, It is particularly preferable to be under vacuum. Moreover, it is preferable that the chamber 107 and the chamber 108 are under atmospheric pressure from the property of processing.
- the long substrate 1 is unwound from the take-up roll 2 and is continuously processed in each chamber from the chamber 102 to the chamber 106.
- a buffering device may be provided between the chambers so that the substrate can be transported smoothly.
- an organic EL element can be manufactured with high productivity by a roll-to-roll method.
- the winding roll 3 wound up after various processing in the chamber 106 is processed in the chamber 107 by a device that removes part of the organic light emitting layer, the cathode, the sealing layer, and the protective layer on the substrate with a laser, It is wound up as a winding roll 4. Thereafter, the substrate is cut at the place removed by the laser in the chamber 108 to obtain the product 5 of the organic EL element.
- the organic EL device manufacturing method according to the first embodiment includes a first step of forming a patterned anode on a substrate, and a patterned anode extraction electrode and a patterned cathode extraction electrode on the substrate.
- a second step a third step of forming a patterned insulating layer on a portion of the anode extraction electrode, and an organic light emitting layer on the substrate, anode, anode extraction electrode, cathode extraction electrode and insulation layer
- a fourth step a fifth step of removing a part of the organic light emitting layer on the cathode extraction electrode and a part of the organic light emitting layer on the insulating layer by a laser, and removing the organic light emitting layer and the organic light emitting layer by the laser.
- step 8 and step 8 the substrate is cut at a part of the substrate from which at least one of the organic light emitting layer, the cathode, the sealing layer, and the protective layer has been removed by the laser, thereby forming a closed linear organic light emitting layer. And a ninth step of forming the organic EL element.
- FIG. 2 is a schematic cross-sectional view in each step of the method for manufacturing an organic EL element according to the first embodiment of the present invention.
- Each of the schematic cross-sectional views from (a) to (f) of FIG. 2 shows a cross-sectional form at the time of processing performed in the first to sixth steps of the method of manufacturing the organic EL element of the first embodiment. It is a thing.
- Each of the schematic cross-sectional views of (g) and (h) of FIG. 2 forms a sealing layer and a protective layer, which are performed in the seventh step of the method of manufacturing the organic EL element of the first embodiment.
- the form of the cross section of the process to perform is shown.
- Each of the schematic cross-sectional views of (i) and (j) of FIG. 2 shows a cross-sectional form at the time of processing performed in the eighth step and the ninth step of the method of manufacturing the organic EL element of the first embodiment. Is. Hereinafter, each step will be described.
- the first step is a step of forming a patterned anode on the substrate.
- a patterned anode 12 is shown on the substrate 11.
- the substrate 11 can be a base material for forming an organic EL element.
- Examples of the material of the substrate 11 include polyacrylate, polymethacrylate, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyethylene naphthalate (PEN), polycarbonate (PC), polyarylate, and polyvinyl chloride.
- PVC polyethylene
- PE polyethylene
- PE polyethylene copolymers
- PP polypropylene
- PS polystyrene
- PA polyamide
- PA polyetheretherketone
- polysulfone polyethersulfone
- polyimide polyether Polymers
- imide heat-resistant transparent base film (product name: Sila-DEC, manufactured by Chisso Corporation) having a basic skeleton of silsesquioxane having an organic-inorganic hybrid structure, and further comprising two or more layers of the polymer. It can be given substrate or the like formed by laminating.
- polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyethylene naphthalate (PEN), polycarbonate (PC), and the like are preferably used in terms of cost and availability. Further, in terms of optical transparency, heat resistance, and adhesion to an inorganic layer, a heat resistant transparent film having a basic skeleton of silsesquioxane having an organic-inorganic hybrid structure is preferably used.
- the thickness of the substrate 11 is preferably 5 to 500 ⁇ m, more preferably 25 to 250 ⁇ m, from the viewpoints of handleability and mechanical strength.
- the substrate 11 preferably has a function of blocking oxygen and moisture in the atmosphere.
- oxygen and moisture may enter the inside, which may cause deterioration in light emission performance over time. Therefore, it is preferable to block the organic EL element from the outside by sealing it with a gas barrier layer or a sealing material. Therefore, it is preferable that a gas barrier layer is formed on at least one surface of the substrate 11.
- the gas barrier layer may be organic or inorganic. Examples of the material for the inorganic gas barrier layer include metal oxides such as silicon, aluminum, and titanium, metal nitrides, and metal oxynitrides.
- the anode 12 is an electrode film that supplies (injects) holes to the organic light emitting layer.
- the material type and physical properties of the anode 12 are not particularly limited and can be arbitrarily set.
- the anode 12 can be formed of a material having a high work function (4 eV or more), for example, an electrode material such as a metal, an alloy, an electrically conductive compound, and a mixture thereof.
- the anode 12 may be made of a light-transmitting material (transparent electrode) such as indium tin oxide (ITO) or indium zinc oxide. At this time, light emitted from the organic light emitting layer can be extracted from the substrate 11 side.
- dry film forming methods include vapor deposition and sputtering.
- a method for forming a pattern by a dry film formation method a method such as pattern film formation using a metal mask, wet etching using a photoresist or printing, lift-off, or the like can be used.
- examples of the wet film forming method include a coating method and an ink jet method. In these methods, it is possible to form a pattern directly.
- a dry film forming method it is preferable to use wet etching or lift-off in consideration of pattern accuracy, flexibility, productivity, and the like.
- a coating method or an inkjet method it is more preferable because a pattern can be directly drawn.
- the sheet resistance of the anode 12 is preferably several hundred ⁇ / ⁇ or less. Further, although the film thickness depends on the material, it is usually selected in the range of 10 to 1000 nm, preferably 10 to 200 nm.
- the second step is a step of forming a patterned anode extraction electrode and a patterned cathode extraction electrode on the substrate.
- a patterned anode extraction electrode 13 and a patterned cathode extraction electrode 14 are shown on the substrate 11.
- the anode extraction electrode 13 and the cathode extraction electrode 14 are used when a voltage is applied by connecting the anode and cathode of the organic EL element to an external power source or the like, respectively.
- materials for the anode extraction electrode 13 and the cathode extraction electrode 14 metal materials such as Al, Cr, Mo, Ti, Ta, Cu, Ag, Au, and alloys thereof are generally used.
- the method of forming the anode extraction electrode 13 and the cathode extraction electrode 14 is the same as that of the anode 12. Known methods such as a vapor deposition method, a sputtering method, a coating method, and an ink jet method can be applied.
- a method for forming the pattern a method similar to the method described in the first step can be used.
- the third step is a step of forming a patterned insulating layer on a part of the anode extraction electrode.
- FIG. 2C the insulating layer 15 patterned on a part of the anode extraction electrode 13 is shown.
- the insulating layer 15 is a layer provided so that the anode extraction electrode 13 and the cathode are not short-circuited when the cathode described later is formed.
- Examples of the material constituting the insulating layer 15 include inorganic materials such as SiO 2 , Si 3 N 4 , Al 2 O 3 , TiO 2 , SiOxCy, and SiOxNy, and insulating organic materials such as a photoresist. .
- the method for forming the insulating layer 15 is the same as that for the anode 12. Known methods such as a vapor deposition method, a sputtering method, a coating method, and an ink jet method can be applied. As a method for forming the pattern, a method similar to the method described in the first step can be used.
- the fourth step is a step of forming an organic light emitting layer on the substrate, the anode, the anode extraction electrode, the cathode extraction electrode, and the insulating layer.
- the organic light emitting layer 16 is illustrated on the substrate 11, the anode 12, the anode extraction electrode 13, the cathode extraction electrode 14, and the insulating layer 15.
- the organic light-emitting layer 16 has a structure in which holes injected directly from the anode or from the anode through the hole transport layer and the like and electrons injected directly from the cathode or from the cathode through the electron transport layer and the like are regenerated. It is a layer that emits light when bonded. Note that the portion that emits light may be inside the light emitting layer, or may be an interface between the light emitting layer and a layer adjacent thereto.
- the organic light emitting layer 16 is preferably formed of an organic light emitting material including a host compound (host material) and a light emitting material (light emitting dopant compound).
- a host compound host material
- a light emitting material light emitting dopant compound
- an arbitrary emission color can be obtained by appropriately adjusting the type of the light emitting material to be included.
- the light emitting material included in the organic light emitting layer 16 for example, a phosphorescent light emitting material (phosphorescent compound, phosphorescent light emitting compound), a fluorescent light emitting material, or the like can be used.
- the organic light emitting layer 16 may contain one type of light emitting material, or may contain a plurality of types of light emitting materials having different light emission maximum wavelengths. About a specific luminescent material, it can select from a well-known material suitably and can be used.
- the method for forming the organic light emitting layer 16 is the same as that in the first step, but a vapor deposition method is generally used as a method for forming the layer of the organic light emitting material.
- a vapor deposition method is generally used as a method for forming the layer of the organic light emitting material.
- an apparatus for forming the organic light emitting layer 16 by vapor deposition is described.
- an electron transport layer In addition to the organic light emitting layer 16, an electron transport layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron injection layer (cathode buffer layer), a hole injection layer (anode buffer layer), etc., as necessary. These layers can be formed as appropriate. The specific contents of each layer can be appropriately selected from known knowledge and applied. As a method for forming each of these layers, a vapor deposition method is generally used.
- the fifth step is a step of removing a part of the organic light emitting layer on the cathode extraction electrode and a part of the organic light emitting layer on the insulating layer with a laser.
- a part of the organic light emitting layer 16 on the cathode extraction electrode 14 and a part of the organic light emitting layer 16 on the insulating layer 15 are removed by laser, and the portions indicated as 17b and 17a are respectively shown. It is shown in the figure.
- the organic light emitting layer 16 basically includes an organic compound as a main component. Therefore, by heating to a high temperature, the organic compound can be thermally decomposed, volatilized and scattered. By removing a part of the organic light emitting layer 16 on the cathode extraction electrode 14 and a part of the organic light emitting layer 16 on the insulating layer 15 by heating to a high temperature, a part of the cathode extraction electrode 14 and the insulating layer 15 are removed. A part of will be exposed to the outside world. Thereafter, the cathode can be formed thereon in the next step.
- a laser is used as means for removing a part of the organic light emitting layer 16 by heating to a high temperature.
- a laser is excellent in directivity and convergence, and it is possible to irradiate only a specific fine portion and heat only the fine portion to a high temperature.
- Laser processing includes thermal processing and non-thermal processing.
- Thermal processing is processing performed while laser light is absorbed on the surface of a solid material and converted into heat, and the material is melted with the thermal energy.
- Infrared lasers that are susceptible to thermal effects are used.
- non-thermal processing is also called laser ablation processing, which is a processing that instantly melts, absorbs, and scatters the portion where the laser beam is absorbed, even if the material melts at a fairly high temperature under atmospheric pressure. is there.
- An infrared laser, an ultraviolet laser, a pulse laser, or the like is used depending on the processing content.
- laser ablation processing is preferable because there is little thermal damage to the periphery of the processing portion, and it is possible to remove organic compounds by evaporation and scattering under vacuum and atmospheric pressure.
- the wavelength of the laser used in this embodiment is preferably 300 to 700 nm from the viewpoint of energy absorption in the organic layer, but is not limited thereto.
- a pulse laser that can take a wide range of processing conditions such as output, frequency, duty ratio, etc. is preferably used.
- the laser medium classification includes solid laser, liquid laser, gas laser, semiconductor laser, and the like. From the viewpoint of high speed and low thermal damage, solid laser or gas laser is preferable.
- solid laser or gas laser is preferable.
- solid-state laser a ruby laser, a YAG laser, a sapphire laser, a titanium sapphire laser or the like can be used, and a YVO 4 laser is particularly preferable.
- gas laser a CO 2 laser, a helium neon laser, an argon ion laser, an excimer laser or the like can be used, and an excimer laser is particularly preferable.
- the organic light emitting layer 16 is instantaneously melted, evaporated and scattered. Since the pyrolyzed material becomes a low-molecular substance, it can be scattered far away and can be easily removed and discarded from the system using a vacuum pump or the like.
- the chamber 103 in FIG. 1A describes an apparatus for removing a part of the organic light emitting layer with a laser under vacuum.
- the pattern (shape, position) of the organic light emitting layer to be removed by the laser can be formed with a high degree of freedom by adjusting the position to be removed by the laser by the adjusting mechanism based on the position information.
- the shape and position of a part of the organic light emitting layer on the cathode extraction electrode and a part of the organic light emitting layer on the insulating layer to be removed Various changes are possible. As a result, the pattern of the organic light emitting layer can be formed with a high degree of freedom and accuracy.
- the sixth step is a step of forming a cathode on the organic light emitting layer, the cathode extraction electrode from which the organic light emitting layer has been removed by the laser, and the insulating layer from which the organic light emitting layer has been removed by the laser.
- a cathode 18 is shown on the organic light emitting layer 16, the cathode extraction electrode 14 from which the organic light emitting layer 16 has been removed by a laser, and the insulating layer 15 from which the organic light emitting layer 16 has been removed by a laser. .
- the cathode 18 is an electrode that supplies (injects) electrons to the light emitting layer.
- the material constituting the cathode is not particularly limited, but is usually an electrode material such as a material having a low work function (4 eV or less), for example, a metal (electron injecting metal), an alloy, an electrically conductive compound, and a mixture thereof. It is formed.
- a vapor deposition method is generally used.
- an apparatus for forming the cathode 14 by vapor deposition is described.
- the cathode 18 can be formed of a light-transmitting electrode material like the anode.
- a metal film made of an electrode material for forming a cathode so as to have a film thickness of 1 nm or more and 20 nm or less
- a film made of a conductive transparent material described in the anode 12 is formed on this metal film.
- a transparent or translucent cathode can be formed.
- the light emitted from the organic light emitting layer 16 can be extracted from the opposite side of the substrate 11.
- the seventh step is a step of forming at least one of a sealing layer and a protective layer on the cathode.
- any one of the three methods of forming only the sealing layer on the cathode, forming only the protective layer, and forming both the sealing layer and the protective layer is performed. You may apply.
- FIG. 2G the formation of the sealing layer 19 on the cathode 18 is illustrated.
- FIG. 2 (h) shows that the protective layer 20 is formed on the sealing layer 19.
- the sealing layer 19 is for shielding and protecting the organic light emitting layer 16 from the external environment.
- the sealing layer 19 has a gas barrier property against water vapor and oxygen.
- an inorganic material such as SiO 2 , Si 3 N 4 , Al 2 O 3 , TiO 2 , SiOxCy, or SiOxNy is used.
- a known method such as a vapor deposition method, a sputtering method, a CVD method, or an ion plating method can be applied.
- a vapor deposition method such as a vapor deposition method, a sputtering method, a CVD method, or an ion plating method.
- a sputtering method such as a vapor deposition method, a sputtering method, a CVD method, or an ion plating method.
- the protective layer 20 is a layer that is installed on the sealing layer 19 and protects the internal organic EL element from an external physical external force.
- the material constituting the protective layer 20 include, for example, ethylene tetrafluoroethylene copolymer, polyethylene, polypropylene, polystyrene, polymethyl methacrylate, nylon, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, and polyethersulfone.
- curable resins such as thermoplastic resins, urea resins, melamine resins, phenol resins, resorcinol resins, epoxy resins, unsaturated polyester resins, polyurethane resins, and acrylic resins.
- the protective layer 20 preferably has a function of blocking oxygen and moisture in the atmosphere. That is, it is preferable that a gas barrier layer is formed on at least one surface of the protective layer 20.
- the gas barrier layer may be organic or inorganic. Examples of the material for the inorganic gas barrier layer include metal oxides such as silicon, aluminum, and titanium, metal nitrides, and metal oxynitrides. If it is the protective layer 20 provided with such a gas barrier layer, the structure without the sealing layer 19 is also possible.
- an adhesive layer may be provided and laminated.
- a material constituting the adhesive layer any of a thermosetting resin, a photocurable resin, and a thermoplastic resin can be used.
- the thermosetting resin for example, epoxy resin, acrylic resin, silicone resin, urea resin, melamine resin, phenol resin, resorcinol resin, unsaturated polyester resin, polyurethane resin, etc. Resin.
- the photocurable resin examples include radical curable resins such as ester acrylates, urethane acrylates, epoxy acrylates, melamine acrylates, acrylic resin acrylates, etc., or radical photocurable resins using resins such as urethane polyesters, epoxies, vinyl ethers, and the like. Examples thereof include a cationic photocurable resin using a resin.
- the thermoplastic resin examples include polyethylene, polypropylene, polyamide, polyethylene terephthalate (PET), polyvinyl alcohol (PVA), ethylene-vinyl acetate copolymer (EVA), ethylene-propylene copolymer, ethylene-acrylic acid copolymer. Polymers, ethylene-methacrylic acid copolymers, polyvinylidene chloride (PVDC), ionomers and the like can be used.
- a known method such as a laminating method can be applied.
- a laminating method In the chamber 106 of FIG. 1A, an apparatus for forming the protective layer 20 by a laminating method is described.
- the fourth step to the seventh step it is possible to process continuously by using a long substrate. Therefore, the chamber provided with the apparatus which performs each process can be connected, and an organic EL element can be manufactured with high productivity by a roll-to-roll system. Further, since it is preferable to use a vapor phase method such as a vapor deposition method or a sputtering method, the fourth to seventh steps are preferably performed under vacuum.
- the eighth step at least one of the organic light emitting layer, the cathode, the sealing layer, and the protective layer on each of the substrate, the anode extraction electrode, the insulating layer, and the cathode extraction electrode is removed by a laser, and the anode extraction electrode And a step of exposing the cathode extraction electrode on the substrate.
- FIG. 2I at least one of the organic light emitting layer 16, the cathode 18, the sealing layer 19 and the protective layer 20 on each part of the substrate 11, the anode extraction electrode 13, the insulating layer 15 and the cathode extraction electrode 14. Are removed by the laser, and the anode extraction electrode 13 and the cathode extraction electrode 14 are exposed on the substrate, and the portions indicated as 21a and 21b are illustrated.
- the eighth step at least one of the organic light emitting layer 16, the cathode 18, the sealing layer 19 and the protective layer 20 in the vicinity of a part of the anode extraction electrode 13 and a part of the cathode extraction electrode 14 is heated to a high temperature by a laser. As a result, a part of the anode extraction electrode 13 and a part of the cathode extraction electrode 14 are exposed to the outside. Therefore, after cutting the organic EL element in the next ninth step, it is easy to connect an external power source or the like to each electrode of the organic EL element when the individual organic EL element is actually caused to emit light.
- the specific content of the method of removing with a laser is the same as the content described in the fifth step, and the description thereof is omitted.
- the organic light emitting layer is easily scattered by a laser. Therefore, the sealing layer and the protective layer existing on the organic light emitting layer can be simultaneously scattered.
- what is removed by the laser may include a high molecular weight protective layer, it is preferable to appropriately adjust the laser irradiation conditions depending on the object to be removed.
- the shapes and positions of the organic light emitting layer 16, the cathode 18, the sealing layer 19 and the protective layer 20 to be removed can be variously changed by appropriately adjusting the laser irradiation conditions.
- the exposed anode extraction electrode and cathode extraction electrode patterns can be formed with high flexibility and accuracy. can do.
- the degree of freedom and accuracy of the pattern of the organic light emitting layer 16, the exposed anode extraction electrode 13 and the cathode extraction electrode 14 are increased by adjusting the position to be removed by the laser using an adjustment mechanism based on position information. be able to.
- the ninth step is an eighth step, in which at least one of the organic light emitting layer, the cathode, the sealing layer, and the protective layer is removed by a laser, and the substrate is cut to form a closed linear organic light emitting device.
- This is a step of forming an organic EL element having a layer.
- the substrate 11 is cut by a part of the substrate 11 from which the organic light emitting layer 16, the cathode 18, the sealing layer 19 and the protective layer 20 are removed, and a closed linear organic light emitting layer is formed.
- the organic EL element which has is illustrated.
- the obtained organic EL element has the light emission part E, the anode extraction electrode part T1, and the cathode extraction electrode part T2.
- the method for cutting the substrate can be applied by appropriately selecting a known method. At that time, it is preferable to adjust the cutting position by an adjustment mechanism based on position information.
- an apparatus for cutting a substrate by an upper and lower cutter under atmospheric pressure In the chamber 108 of FIG. 1C, there is described an apparatus for cutting a substrate by an upper and lower cutter under atmospheric pressure.
- FIG. 5A is a schematic plan view of the organic EL element according to the first embodiment of the present invention.
- FIG. 5B is a schematic cross-sectional view of the anode extraction electrode portion AA.
- FIG. 5C is a schematic cross-sectional view of the cathode extraction electrode portion BB.
- L1 and L2 indicate locations removed by the laser in the eighth step.
- Part C emits light.
- the first embodiment uses a long substrate.
- a single-wafer substrate can be used as the substrate.
- the removal by the laser is performed in two steps of the fifth step and the eighth step, so that the removal by the laser is performed only in any one step or the removal by the laser is not performed at all.
- the pattern of the organic EL element can be formed with a wider degree of freedom than when not performed.
- the removal by the laser in the fifth step is to remove only the organic light emitting layer before forming the cathode, it is a scattering of only the organic light emitting layer that is relatively easily decomposed, there is little contamination to other layers, and the organic Defects as EL elements are unlikely to occur.
- the removal by the laser in the eighth step is performed after the sealing layer and the protective layer are formed, and there is little possibility that the organic light emitting layer and the like are contaminated by the scattered matter, which affects the performance as the organic EL element. That is less.
- it is performed in order to form the extraction electrode part, and the work can be performed under a general environment such as atmospheric pressure.
- Organic EL device manufacturing apparatus of the second embodiment The organic EL device manufacturing method according to the second embodiment of the present invention is the same as the organic EL device manufacturing method according to the first embodiment except that a part of the organic light emitting layer on the insulating layer is not removed by a laser. It is the same. Therefore, the organic EL element manufacturing apparatus of the second embodiment is the same as the organic EL element manufacturing apparatus of the first embodiment. Since each apparatus which comprises the organic EL element manufacturing apparatus of 2nd Embodiment is the same as the organic EL element manufacturing apparatus of 1st Embodiment, the description is abbreviate
- the organic EL device manufacturing method includes a first step of forming a patterned anode on a substrate, and a patterned anode extraction electrode and a patterned cathode extraction electrode on the substrate.
- a second step a third step of forming a patterned insulating layer on a portion of the anode extraction electrode, and an organic light emitting layer on the substrate, anode, anode extraction electrode, cathode extraction electrode and insulation layer
- a fourth step a fifth step of removing a part of the organic light emitting layer on the cathode extraction electrode by a laser, and forming a cathode on the organic emission layer and the cathode extraction electrode from which the organic light emission layer has been removed by the laser
- a sixth step a seventh step of forming at least one of a sealing layer and a protective layer on the cathode, an organic light emitting layer on each of the substrate, the anode extraction electrode, the insulating layer and the cathode extraction electrode, Of cathode, sealing layer and protective layer
- At least one of the organic light emitting layer, the cathode, the sealing layer, and the protective layer is formed by laser in the eighth step and the eighth step in which at least one is removed by laser
- the manufacturing method of the second embodiment in the fifth step of the first embodiment, only a part of the organic light-emitting layer on the cathode extraction electrode is removed by a laser, and a part of the organic light-emitting layer on the insulating layer is lasered. Do not remove by. Therefore, in the sixth step, no cathode is formed on the insulating layer. Therefore, in the eighth step, when at least one of the organic light emitting layer, the cathode, the sealing layer, and the protective layer is removed by a laser to expose the anode extraction electrode and the cathode extraction electrode on the substrate, The end portion of the organic light emitting layer existing on the insulating layer is exposed to the outside.
- FIG. 3 is a schematic cross-sectional view in each step of the method for manufacturing an organic EL element according to the second embodiment of the present invention.
- 3 (a) to 3 (j) are similar to FIGS. 2 (a) to (j) in the case of the first embodiment, the first to ninth steps of the method for manufacturing the organic EL element of the second embodiment. It corresponds to. That is, each schematic cross-sectional view from (a) to (f) in FIG. 3 is a cross-sectional view at the time of processing performed in the first to sixth steps of the method for manufacturing the organic EL element of the second embodiment. Is shown.
- FIG. 3 forms a sealing layer and a protective layer, which are performed in the seventh step of the method of manufacturing the organic EL element of the second embodiment.
- the form of the cross section of the process to perform is shown.
- Each of the schematic cross-sectional views of (i) and (j) of FIG. 3 shows a cross-sectional form at the time of processing performed in the eighth step and the ninth step of the method of manufacturing the organic EL element of the second embodiment. Is.
- the schematic plan view of the organic EL element of the second embodiment is such that the end of the organic light emitting layer 16 is exposed to the outside in FIG. 5B (not shown).
- the pattern is simplified, and the time required for the removal operation by the laser is shortened. This has the effect of increasing productivity.
- the end portion of the organic light emitting layer existing on the insulating layer on the anode extraction electrode is exposed to the outside, this may reduce the durability of the organic EL element. If there is, it is necessary to take measures such as sealing the end with a sealant.
- the second embodiment uses a long substrate.
- a single-wafer substrate can be used as the substrate.
- Organic EL device manufacturing apparatus of the third embodiment The method for manufacturing an organic EL element according to the third embodiment of the present invention does not include a step of forming a patterned insulating layer on a part of the anode extraction electrode. Therefore, the organic EL device manufacturing apparatus of the third embodiment does not have an apparatus for forming an insulating layer on a substrate. Except this, it is the same as that of the manufacturing apparatus of the organic EL element of 1st Embodiment and 2nd Embodiment.
- the organic EL device manufacturing method of the third embodiment includes a first step of forming a patterned anode on a substrate, and a patterned anode extraction electrode and a patterned cathode extraction electrode on the substrate. A second step, a third step of forming an organic light emitting layer on the substrate, the anode, the anode extraction electrode and the cathode extraction electrode, and a fourth step of removing a part of the organic light emission layer on the cathode extraction electrode by a laser.
- the substrate is cut at a part of the substrate from which at least one of the organic light emitting layer, the cathode, the sealing layer, and the protective layer has been removed by the laser, and a closed linear organic And an eighth step of forming an organic EL element having a light emitting layer.
- the third step to the sixth step it is possible to process continuously by using a long substrate. Therefore, the chamber provided with the apparatus which performs each process can be connected, and an organic EL element can be manufactured with high productivity by a roll-to-roll system.
- the third to sixth steps are preferably performed under vacuum.
- the seventh step is preferably carried out under atmospheric pressure in order to make it easier to disperse, remove and discard from the system, since the one thermally decomposed by the laser has a relatively high molecular weight. .
- the manufacturing method of the third embodiment does not have a step corresponding to the third step of forming a patterned insulating layer on a part of the anode extraction electrode in the second embodiment. Other steps are performed in the same manner as in the second embodiment. Therefore, the number of steps is one less than that of the manufacturing method of the second embodiment.
- FIG. 4 is a schematic cross-sectional view in each step of the method for manufacturing an organic EL element according to the third embodiment of the present invention.
- Each of the schematic cross-sectional views of FIGS. 4A and 4B corresponds to the first step and the second step of the manufacturing method of the third embodiment, respectively.
- FIG. 4 there is no process corresponding to FIG. 3C in the case of the second embodiment.
- Each of the schematic cross-sectional views from (c) to (e) of FIG. 4 shows the form of a cross section during processing performed in the third to fifth steps of the manufacturing method of the third embodiment. .
- FIG. 4F and 4G is a cross-section of the step of forming the sealing layer and the step of forming the protective layer, respectively, performed in the sixth step of the manufacturing method of the third embodiment.
- the form of is shown.
- Each of the schematic cross-sectional views of (h) and (i) of FIG. 4 shows a cross-sectional form at the time of processing performed in the seventh step and the eighth step of the manufacturing method of the third embodiment.
- the organic light emitting layer 16 is formed on the substrate, the anode, the anode extraction electrode, and the cathode extraction electrode (see FIG. 4C).
- the fourth step only a part of the organic light emitting layer on the cathode extraction electrode is removed by the laser (see FIG. 4D).
- the schematic plan view of the organic EL element of the third embodiment is one having no insulating layer 15 in FIGS. 5 (a) and 5 (b). Moreover, in FIG.5 (b), the edge part of the organic light emitting layer 16 will be exposed outside (not shown).
- the organic light emitting layer on the anode extraction electrode is not removed by the laser in the fourth step, the pattern is simplified and the time required for the removal operation by the laser is shortened. Moreover, since it does not have the process of forming the patterned insulating layer which exists in 1st Embodiment or 2nd Embodiment, it has the effect that manufacturing time is shortened and productivity rises. However, since the end portion of the organic light emitting layer on the anode extraction electrode is exposed to the outside, if the endurance performance of the organic EL element deteriorates due to this, the end portion is sealed with a sealant. It is necessary to take measures such as stopping.
- the third embodiment uses a long substrate.
- a single-wafer type substrate can be used as the substrate.
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Abstract
La présente invention concerne un procédé de fabrication d'un élément électroluminescent organique et un dispositif de fabrication permettant de former en continu un motif qui est simple et a un degré élevé de liberté sur un substrat qui est acheminé en continu. L'invention concerne le procédé de fabrication d'un élément électroluminescent organique et un dispositif de fabrication associé, le procédé comportant les étapes consistant à : former une anode sur un substrat ; former une électrode de sortie d'anode et une électrode de sortie de cathode sur le substrat ; former une couche d'isolation sur l'électrode de sortie d'anode ; former une couche électroluminescente organique sur le substrat, l'anode, l'électrode de sortie d'anode, l'électrode de sortie de cathode et la couche d'isolation ; éliminer, à l'aide d'un laser, la couche électroluminescente organique sur l'électrode de sortie de cathode ; former une cathode sur la couche électroluminescente organique et l'électrode de sortie de cathode ; former une couche d'étanchéité et/ou une couche de protection sur la cathode ; et exposer l'électrode de sortie d'anode et l'électrode de sortie de cathode sur le substrat en retirant, à l'aide d'un laser, la couche électroluminescente organique, la cathode, et la couche d'étanchéité et/ou la couche de protection, qui sont sur le substrat, l'électrode de sortie d'anode, la couche d'isolation et l'électrode de sortie de cathode.
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EP3743952A4 (fr) * | 2018-01-25 | 2021-11-10 | OLEDWorks LLC | Procédé de dépôt et de fabrication d'oled sans masque |
CN111095593B (zh) * | 2018-01-25 | 2022-07-05 | Oled沃克斯有限责任公司 | 用于无掩模oled沉积和制造的方法 |
KR102561366B1 (ko) | 2018-01-25 | 2023-07-28 | 오엘이디워크스 엘엘씨 | 마스크-없는 oled 증착 및 제작 방법 |
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