WO2015129183A1 - 太陽電池モジュール - Google Patents
太陽電池モジュール Download PDFInfo
- Publication number
- WO2015129183A1 WO2015129183A1 PCT/JP2015/000632 JP2015000632W WO2015129183A1 WO 2015129183 A1 WO2015129183 A1 WO 2015129183A1 JP 2015000632 W JP2015000632 W JP 2015000632W WO 2015129183 A1 WO2015129183 A1 WO 2015129183A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wavelength
- solar cell
- region
- light
- wavelength conversion
- Prior art date
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S30/00—Structural details of PV modules other than those related to light conversion
- H02S30/10—Frame structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Definitions
- This disclosure relates to a solar cell module.
- Patent Document 1 discloses a solar cell module including a first sealing layer that does not contain a wavelength conversion substance and a second sealing layer that contains a wavelength conversion substance between a protective glass and a solar cell. Is disclosed.
- the solar cell module it is required to improve the utilization efficiency of incident light and improve the photoelectric conversion efficiency. Moreover, the solar cell module is desired not only to have high photoelectric conversion efficiency but also to have a good appearance and excellent design.
- a solar cell module includes a plurality of solar cells, a first protective member provided on the light receiving surface side of the solar cell, a second protective member provided on the back surface side of the solar cell, and the respective protective members.
- a sealing layer that seals the solar cell and a wavelength conversion material that absorbs light of a specific wavelength and converts it into light having a longer wavelength. It is a back side region located on the second protection member side of the battery, and is contained at least in a gap region corresponding to the gap between the solar cells.
- the concentration of the wavelength converting substance is the same as that of the back side of the solar cell and the second protection. It is higher in the gap region than in the region sandwiched between the members.
- the utilization efficiency of incident light can be improved and the photoelectric conversion efficiency can be improved.
- the solar cell module according to the present disclosure has, for example, good appearance and excellent design.
- the “light-receiving surface” of the solar cell module and the solar cell means a surface on which light is mainly incident (over 50% to 100% of light is incident from the light-receiving surface), and “back surface” is It means the surface opposite to the light receiving surface.
- descriptions such as “providing the second member on the first member” do not intend only when the first and second members are provided in direct contact unless specifically limited. That is, this description includes a case where another member exists between the first and second members.
- FIG. 1 is a cross-sectional view of the solar cell module 10, and FIG. 2 is an enlarged view of a portion A in FIG.
- FIG. 3 is an enlarged view of part B of FIG. 1 and shows a conventional structure on the right as a comparison.
- each protection member, the conductive wire 14, and the electrode of the solar cell 11 are omitted.
- FIG. 4 is a cross-sectional view of the sealing layer 30. Also in FIG. 4, the conducting wire 14 is omitted.
- the wavelength converting substance 33 is indicated by ⁇ for convenience of explanation.
- FIG. 5 is a diagram showing a modification of the present embodiment.
- the solar cell module 10 includes a plurality of solar cells 11, a first protective member 12 provided on the light receiving surface side of the solar cell 11, and a second provided on the back surface side of the solar cell 11.
- a protective member 13 The solar cell 11 is sandwiched between the first protective member 12 and the second protective member 13 and sealed with a sealing layer 30 provided between the protective members.
- at least the gap region 32x corresponding to the gap between the solar cells 11 in the back surface side region 32 of the sealing layer 30 absorbs light of a specific wavelength and converts it into longer wavelength light.
- the wavelength converting substance 33 to be contained is contained. That is, the wavelength conversion substance 33 may be contained only in the gap region 32 x or may be contained in substantially the entire back surface region 32.
- the concentration of the wavelength conversion substance 33 is set higher in the gap region 32x than in the region sandwiched between the back surface of the solar cell 11 and the second protective member 12 (the hidden region 32y).
- the concentration of the wavelength converting substance 33 in the hidden region 32y is 0%, the concentration of the wavelength converting material 33 is naturally higher in the gap region 32x than in the hidden region 32y.
- the sealing layer 30 is also called a filler layer (filler).
- the plurality of solar cells 11 are arranged on substantially the same plane. Adjacent solar cells 11 are connected in series by a conductive wire 14, whereby a string of solar cells 11 is formed.
- the conducting wire 14 bends in the thickness direction of the module between the adjacent solar cells 11, and is attached to the light receiving surface of one solar cell 11 and the back surface of the other solar cell 11 using an adhesive or the like.
- a part of the conducting wire 14 extends from the end of the string and is connected to an output wiring material (not shown).
- the wiring member is drawn out to the back side of the second protective member 13 and drawn into a terminal box (not shown).
- the solar cell 11, the first protective member 12, the second protective member 13, and the sealing layer 30 constitute a solar cell panel 15.
- the solar cell panel 15 is a plate-like body in which the string of the solar cells 11 is sandwiched between the protective members as described above, and is substantially rectangular in a plan view (when viewed from a direction perpendicular to the light receiving surface), for example. Has a shape.
- the second protective member 13 may wrap around the side surface 15a of the solar cell panel 15 and cover the side surface 15a.
- the side surface 15 a is a surface along the thickness direction of the solar cell panel 15.
- a light-transmitting member such as a glass substrate, a resin substrate, or a resin film can be used.
- a glass substrate from the viewpoints of fire resistance, durability, and the like.
- the thickness of the glass substrate is not particularly limited, but is preferably about 2 mm to 6 mm.
- the same transparent member as the first protective member 12 may be used, or an opaque member may be used.
- a resin film is used as the second protective member 13.
- the resin film is not particularly limited, but is preferably a polyethylene terephthalate (PET) film. From the standpoint of reducing moisture permeability, the resin film may be formed with an inorganic compound layer such as silica or a metal layer such as aluminum when light incidence from the back side is not assumed.
- the thickness of the resin film is not particularly limited, but is preferably about 100 ⁇ m to 300 ⁇ m.
- the solar cell module 10 preferably includes a frame 16 that is attached to the edge of the solar cell panel 15.
- the frame 16 protects the edge of the solar cell panel 15 and is used when the solar cell module 10 is installed on a roof or the like.
- the frame 16 is made of a metal such as stainless steel or aluminum, for example, and has a hollow main body and a recess into which an end edge of the solar cell panel 15 is fitted. A gap between the recess of the frame 16 and the solar cell panel 15 is filled with an adhesive 17 such as a silicone resin adhesive.
- the solar cell module 10 preferably includes a reflector 18 provided so as to cover the side surface 15 a of the solar cell panel 15.
- the reflector 18 reflects the light that has been wavelength-converted by the wavelength conversion material 33, and serves to increase the light incident on the solar cell 11 by confining the light that passes through the edge of the solar cell panel 15 in the panel.
- the reflector 18 reflects light other than the wavelength-converted light. Since the wavelength conversion material 33 that absorbs light of a specific wavelength emits isotropically, the installation of the reflector 18 is particularly effective in the solar cell module 10 including the wavelength conversion material 33.
- the reflector 18 covers substantially the entire side surface 15 a and covers the light receiving surface of the first protection member 12 and the back surface of the second protection member 13 located at the edge of the solar cell panel 15.
- the installation of the reflector 18 on each protection member is preferably limited to the portion covered with the frame 16.
- the reflector 18 is a resin sheet containing, for example, a white pigment, and is attached to the edge of the solar cell panel 15.
- a coating film may be formed using white paint on the edge of the solar cell panel 15 or the recess of the frame 16, and the coating film may be used as the reflector 18.
- a white pigment or the like may be added to the adhesive 17 to function as the reflector 18.
- the solar cell 11 includes a photoelectric conversion unit 20 that generates carriers by receiving sunlight.
- the photoelectric conversion unit 20 includes a light receiving surface electrode formed on the light receiving surface of the photoelectric conversion unit 20 and a back electrode formed on the back surface (both not shown) as electrodes for collecting the generated carriers. .
- a conductive wire 14 is electrically connected to each electrode.
- the structure of the solar cell 11 is not limited thereto, and may be a structure in which electrodes are formed only on the back surface of the photoelectric conversion unit 20, for example.
- the back electrode is preferably formed in a larger area than the light receiving surface electrode, and the surface having the larger electrode area (or the surface on which the electrode is formed) can be said to be the “back surface” of the solar cell 11.
- the photoelectric conversion unit 20 includes, for example, a semiconductor substrate 21, amorphous semiconductor layers 22 and 23 formed on the substrate, and transparent conductive layers 24 and 25 formed on the amorphous semiconductor layer.
- the semiconductor constituting the semiconductor substrate 21 include crystalline silicon (c-Si), gallium arsenide (GaAs), indium phosphide (InP), and the like.
- the amorphous semiconductor constituting the amorphous semiconductor layers 22 and 23 include i-type amorphous silicon, n-type amorphous silicon, and p-type amorphous silicon.
- the transparent conductive layers 24 and 25 are made of a transparent conductive oxide obtained by doping a metal oxide such as indium oxide (In 2 O 3 ) or zinc oxide (ZnO) with tin (Sn), antimony (Sb), or the like. It is preferable.
- a metal oxide such as indium oxide (In 2 O 3 ) or zinc oxide (ZnO) with tin (Sn), antimony (Sb), or the like. It is preferable.
- an n-type single crystal silicon substrate is applied to the semiconductor substrate 21.
- an i-type amorphous silicon layer, a p-type amorphous silicon layer, and a transparent conductive layer 24 are sequentially formed on a light-receiving surface of an n-type single crystal silicon substrate, and an i-type non-crystalline layer is formed on the back surface of the substrate. It has a structure in which a crystalline silicon layer, an n-type amorphous silicon layer, and a transparent conductive layer 25 are sequentially formed.
- the p-type amorphous silicon layer may be formed on the back surface side of the n-type single crystal silicon substrate, and the n-type amorphous silicon layer may be formed on the light receiving surface side of the substrate. That is, the photoelectric conversion unit 20 has a junction (heterojunction) between semiconductors having different optical gaps.
- An amorphous silicon layer (thickness: several to several tens of nm) forming a heterojunction generally absorbs light having a wavelength of 600 nm or less.
- the wavelength conversion material 33 contained in the sealing layer 30 absorbs light having a wavelength that has energy equal to or greater than the band gap of the amorphous semiconductor layers 22 and 23 that are heterojunction layers. It is preferable to convert.
- the sealing layer 30 is provided between each protective member and the solar cell 11 and plays a role of preventing moisture or the like from contacting the solar cell 11.
- the sealing layer 30 contains the wavelength conversion material 33 in at least the gap region 32 x of the back surface region 32.
- the wavelength conversion substance 33 is also contained in the hidden region 32 y of the light receiving surface side region 31 and the back surface side region 32.
- the wavelength conversion substance 33 is also contained between the solar cell 11 located at the edge of the solar cell panel 15, that is, the end of the string, and the side surface 15a of the solar cell panel 15.
- the light receiving surface side region 31 is a region located closer to the first protective member 12 than the solar cell 11 of the sealing layer 30.
- the back side region 32 is a region located closer to the second protective member 13 than the solar cell 11 of the sealing layer 30.
- the gap region 32 x is a region corresponding to the gap between the solar cells 11 in the back surface region 32.
- the hidden region 32 y is a region sandwiched between the back surface of the solar cell 11 and the second protection member 13 in the back surface region 32.
- the sealing layer 30 uses a resin sheet (hereinafter referred to as “resin sheet 31”) constituting the light receiving surface side region 31 and a resin sheet (hereinafter referred to as “resin sheet 32”) constituting the back side region 32, It is suitable to form by the below-mentioned lamination process.
- resin sheet 31 resin sheet constituting the light receiving surface side region 31
- resin sheet 32 resin sheet constituting the back side region 32
- the resin constituting the sealing layer 30 preferably has good adhesion to each protective member and the solar cell 11 and hardly permeates moisture.
- an olefin resin obtained by polymerizing at least one selected from ⁇ -olefins having 2 to 20 carbon atoms (eg, polyethylene, polypropylene, random or block copolymers of ethylene and other ⁇ -olefins, etc.
- Ester resins for example, polycondensates of polyols and polycarboxylic acids or acid anhydrides / lower alkyl esters thereof
- urethane resins for example, polyisocyanates and active hydrogen group-containing compounds (diols, polyolreols, Dicarboxylic acids, polycarboxylic acids, polyamines, polythiols, etc.)
- epoxy resins eg, polyepoxide ring-opening polymers, polyepoxides and active hydrogen group-containing compounds
- ⁇ Olefin and vinyl carboxylate, acrylic ester, or other vinyl And a copolymer of Rumonoma can be exemplified.
- olefin resins particularly polymers containing ethylene
- copolymers of ⁇ -olefin and vinyl carboxylate are particularly preferable.
- ethylene-vinyl acetate copolymer (EVA) is particularly preferable.
- the thickness of the sealing layer 30 is not particularly limited, but preferably the thickness of each of the light receiving surface side region 31 and the back surface side region 32 is about 100 to 600 ⁇ m. Although it depends on the structure and application (use environment) of the solar cell module 10, it is generally preferable to use a high crosslink density resin for the light receiving surface side region 31 and a low crosslink density resin or non-crosslinkable resin for the back surface side region 32. Is used.
- the refractive index of the sealing layer 30 is preferably higher than the refractive index of the outermost layer of the first protective member 12 in the region containing the wavelength conversion substance 33. That is, when the 1st protection member 12 is a glass substrate, it is suitable to make the refractive index of the sealing layer 30 higher than the refractive index of the glass surface.
- the refractive index of the sealing layer 30 can be adjusted, for example, by appropriately changing the composition of the resin component. Since the wavelength converting material 33 that absorbs light of a specific wavelength emits isotropically, there is also light that passes through the glass and exits from the panel. However, the adjustment of the refractive index increases the total reflection component on the glass surface. Thus, the light can be prevented from being lost.
- the wavelength converting substance 33 is a substance that absorbs light of a specific wavelength and converts the wavelength, and converts light in a wavelength region that has a small contribution to power generation into light in a wavelength region that has a large contribution to power generation. To do.
- the wavelength converting substance 33 absorbs ultraviolet light, for example, light having a wavelength shorter than 380 nm, and converts it into light having a longer wavelength (for example, 400 to 800 nm). In this case, the wavelength converting substance 33 also contributes to suppression of deterioration of the constituent material due to ultraviolet rays.
- the wavelength converting substance 33 preferably absorbs ultraviolet rays and emits visible light, but may absorb visible light or infrared light. In general, the wavelength converting substance 33 converts short-wavelength light into longer-wavelength light. However, the wavelength-converting substance 33 may generate so-called up-conversion light emission that converts long-wavelength light into shorter-wavelength light. . A preferable conversion wavelength varies depending on the type of the solar cell 11.
- the wavelength conversion substance 33 absorbs light having a wavelength having energy equal to or greater than the band gap of the heterojunction layer and performs wavelength conversion. That is, it is preferable that the wavelength conversion substance 33 converts light having a wavelength that is absorbed by the heterojunction layer.
- the wavelength conversion material 33 that absorbs the light ⁇ having the wavelength ⁇ absorbed by the amorphous semiconductor layers 22 and 23 that are heterojunction layers and can convert the light ⁇ to the light ⁇ having the wavelength ⁇ that is not absorbed by the semiconductor layer.
- ⁇ is, for example, 600 nm or less.
- the sealing layer 100 in which the wavelength converting substance 33 does not exist is used, part of the light ⁇ is absorbed by the amorphous semiconductor layers 22 and 23.
- the wavelength converting substance 33 include semiconductor nanoparticles (quantum dots), luminescent metal complexes, organic fluorescent dyes, and the like.
- semiconductor nanoparticles include zinc oxide (ZnO), cadmium selenide (CdSe), cadmium telluride (CdTe), gallium nitride (GaN), yttrium oxide (Y 2 O 3 ), indium phosphide (InP), and the like. Particles can be exemplified.
- Examples of the luminescent metal complex include Ir complexes such as [Ir (bqn) 3 ] (PF 6 ) 3 and [Ir (dpbpy) 3 ] (PF 6 ) 3 , [Ru (bqn) 3 ] (PF 6 ) 3 , Ru complexes such as [Ru (bpy) 3 ] (ClO 4 ) 2 , Eu complexes such as [Eu (FOD) 3 ] phen, [Eu (TFA) 3 ] phen, [Tb (FOD) 3 ] phen, [Tb Examples thereof include Tb complexes such as (HFA) 3 ] phen.
- Examples of organic fluorescent dyes include rhodamine dyes, coumarin dyes, fluorescein dyes, and perylene dyes.
- the concentration of the wavelength converting substance 33 is “ ⁇ 33 ”.
- ⁇ 33 in the back side region 32 is different between the gap region 32x and the hidden region 32y (see FIG. 4). Thereby, for example, the utilization efficiency of the wavelength conversion substance 33 can be improved. If the wavelength converting material 33 in a substantially entire area of the rear region 32 is contained, a higher [rho 33 in gap region 32x than hidden area 32y. That is, it is preferable that there is a concentration gradient of the wavelength conversion material 33 in the back surface region 32 and the wavelength conversion material 33 is unevenly distributed in the gap region 32x. Further, ⁇ 33 at the edge portion of the solar cell panel 15 can be made substantially the same as ⁇ 33 in the gap region 32x, for example.
- ⁇ 33 in the gap region 32x> ⁇ 33 in the hidden region 32y is the difference in the amount of incident light in the gap region 32x and the hidden region 32y. That is, the hidden region 32y is a region hidden from the solar cell 11 when viewed from the light receiving surface side, and is a region where the amount of incident light is small. On the other hand, the gap region 32x is a region where the amount of incident light is large because the solar cell 11 does not exist on the light receiving surface side. Therefore, the uneven distribution of the wavelength converting material 33 in the gap region 32x is important for efficiently using the expensive wavelength converting material 33. Thereby, the wavelength conversion efficiency can be increased while suppressing the amount of the wavelength conversion substance 33 used.
- the wavelength conversion substance 33 is unevenly distributed in the gap region 32x. That is, since the color contrast increases in the region where the solar cells 11 are present and the region located in the gap between the solar cells 11, the contrast is reduced by unevenly distributing the wavelength conversion material 33 in the gap region 32x. To do. In this case, it is preferable to use the wavelength conversion substance 33 that can be converted into light having a wavelength close to the reflected light of the solar cell 11.
- a wavelength conversion substance 33 that absorbs ultraviolet light having a wavelength of 380 nm or less and converts it to a wavelength close to blue (for example, 450 to 490 nm) is used.
- the back side region 32 may be increased as much as [rho 33 approaches the gap region 32x gradually or stepwise. Further, a concentration gradient of the wavelength converting substance 33 may exist in the thickness direction of the back side region 32.
- the wavelength converting substance 33 may be contained in a larger area in the region adjacent to the solar cell 11 (light receiving surface side region 31) than in the region adjacent to the second protective member 13, for example, and the closer to the second protective member 13 the closer to the second protective member 13. the [rho 33 may be gradually or stepwise reduced.
- ⁇ 33 in the gap region 32x is 0.1 to 15% by weight with respect to the total weight of the gap region 32x when the wavelength conversion material 33 is an inorganic compound such as a semiconductor nanoparticle or a luminescent metal complex. It is preferably 1.5 to 10% by weight.
- the wavelength converting material 33 is an organic compound such as an organic fluorescent dye, it is preferably 0.02 to 2.0% by weight, and 0.05 to 0.8% by weight based on the total weight of the gap region 32x. % Is more preferable.
- ⁇ 33 in the hidden region 32y is preferably 0 to 5% by weight and more preferably 0 to 2% by weight with respect to the total weight of the hidden region 32y when the wavelength converting substance 33 is an inorganic compound. preferable.
- the wavelength converting substance 33 is an organic compound, it is preferably 0 to 0.5% by weight, and more preferably 0 to 0.1% by weight with respect to the total weight of the hidden region 32y.
- ⁇ 33 in the light receiving surface side region 31 is substantially uniform, for example.
- the wavelength converting substance 33 may be contained in a larger area in the area adjacent to the first protective member 12 than in the area adjacent to the solar cell 11, and gradually or gradually becomes ⁇ 33 as it approaches the second protective member 13. May be lowered.
- [Rho 33 in [rho 33 and gap region 32x on the light receiving surface-side region 31 may be substantially identical to each other or may be different. From the viewpoint of improving the photoelectric conversion efficiency, it is preferable that ⁇ 33 in the light receiving surface side region 31 ⁇ ⁇ 33 in the gap region 32x. In order to improve the appearance and reduce the contrast may be a [rho 33 in [rho 33 ⁇ gap region 32x on the light receiving surface side region 31. In any case, it is preferable that ⁇ 33 in the light receiving surface side region 31, ⁇ 33 in the gap region 32 x> ⁇ 33 in the hidden region 32 y.
- an ultraviolet absorbing substance In addition to the wavelength converting substance 33, an ultraviolet absorbing substance, an antioxidant, a flame retardant, and the like may be added to the sealing layer 30. When the incidence of light from the back side is not assumed, a pigment such as titanium oxide may be added to the back side region 32.
- the ultraviolet absorbing material is a material that selectively absorbs ultraviolet light having a wavelength shorter than 380 nm, and does not have a wavelength converting function like the wavelength converting material 33. Specific examples of the ultraviolet absorbing material include benzotriazole compounds, benzophenone compounds, salicylate compounds, cyanoacrylate compounds, nickel compounds, triazine compounds, and the like.
- the solar cell module 10 having the above configuration is obtained by laminating the strings of the solar cells 11 connected by the conductive wires 14 using the resin sheets constituting the first protective member 12, the second protective member 13, and the sealing layer 30. Can be manufactured.
- the first protective member 12, the resin sheet 31, the string of the solar cells 11, the resin sheet 32, and the second protective member 13 are sequentially laminated on the heater.
- This laminated body is heated to about 150 ° C. in a vacuum state, for example. Thereafter, heating is continued while pressing each component member on the heater side under atmospheric pressure, and the resin component of the resin sheet is crosslinked to obtain the solar cell panel 15.
- the reflector 18, the terminal box, the frame 16, etc. are attached to the solar cell panel 15 to obtain the solar cell module 10.
- the concentration gradient of the wavelength converting substance 33 in the back surface region 32 can be formed by using, for example, a plurality of resin sheets having different contents of the wavelength converting substance 33 as the resin sheet 32.
- a resin sheet containing a large amount of wavelength conversion material 33 referred to as resin sheet X
- the resin sheet X is arranged in a portion that becomes the gap region 32x
- the resin sheet Y is arranged in a portion that becomes the hidden region 32y.
- the wavelength conversion material 33 diffuses from the resin sheet 31 to the portion that becomes the gap region 32x of the resin sheet 32, and the concentration gradient of the wavelength conversion material 33 in the back surface region 32 is obtained.
- the utilization efficiency of incident light can be improved and the photoelectric conversion efficiency can be improved. That is, in the solar cell module 10, the wavelength conversion substance 33 can be efficiently used by devising the concentration distribution of the wavelength conversion substance 33 particularly in the back surface side region 32 of the sealing layer 30. When the wavelength conversion material 33 is unevenly distributed in the gap region 32x of the back surface region 32, the back surface region 32 does not contain the wavelength conversion material 33, and the back surface region 32 contains the wavelength conversion material 33 uniformly. In comparison with the above, incident light can be used effectively.
- the wavelength conversion substance 33 may be included only in the gap region 36x.
- the wavelength converting substance 33 is not substantially contained in the hidden region 36 y of the light receiving surface side region 35 and the back surface side region 36. That is, the concentration of the wavelength converting substance 33 is approximately 0% in the hidden region 36y.
- the wavelength converting material 33 is contained at a concentration substantially the same as that of the gap region 36x between the solar cell 11 located at the end of the string and the side surface 15a of the solar cell panel 15. The structure is intended to improve the design property by reducing the contrast.
- FIG. 6 is a cross-sectional view of the sealing layer 50 similar to FIG.
- FIG. 7 is a diagram showing the relationship between the light transmittance and the wavelength in the sealing layer 50.
- the case of the sealing layer containing only each of the 1st wavelength conversion substance 33a and the 2nd wavelength conversion substance 33b is shown on the right as a comparison.
- differences from the first embodiment will be mainly described, and the same components as those in the first embodiment will be denoted by the same reference numerals, and redundant description will be omitted.
- 2nd Embodiment differs in the structure of the sealing layer 50 from the sealing layer 30 of 1st Embodiment.
- the sealing layer 50 is different from the sealing layer 30 containing one type of wavelength conversion material 33 in that two types of first wavelength conversion material 33a and second wavelength conversion material 33b are contained.
- the second wavelength converting substance 33b is a substance that absorbs light having a longer wavelength than the first wavelength converting substance 33a and converts the wavelength.
- the first wavelength conversion material 33a and the second wavelength conversion material 33b have at least maximum absorption wavelengths that do not overlap each other. In addition, it is preferable that at least the maximum emission wavelength of the first wavelength conversion material 33a and the maximum absorption wavelength of the second wavelength conversion material 33b do not overlap.
- the first wavelength conversion material 33a does not substantially absorb ultraviolet rays or the like absorbed by the second wavelength conversion material 33b, and the second wavelength conversion material 33b substantially absorbs the light wavelength-converted by the first wavelength conversion material 33a. It is particularly preferred not to do so.
- the first wavelength conversion material 33a and the second wavelength conversion material 33b are not particularly limited as long as they are a combination that satisfies the above relationship, and for example, a material similar to the wavelength conversion material 33 can be used. Examples of suitable combinations include using a perylene dye for the first wavelength conversion material 33a and using a fluorescein dye for the second wavelength conversion material 33b. As the first wavelength conversion material 33a and the second wavelength conversion material 33b, materials that are the same type of materials (for example, perylene dyes) and have different wavelength conversion characteristics (absorption wavelength, emission wavelength) may be applied.
- the first wavelength conversion material 33 a is contained in the light receiving surface side region 51
- the second wavelength conversion material 33 b is contained in the back surface side region 52.
- the concentration of the second wavelength conversion material 33b in the back surface region 52 is higher in the gap region 52x than in the hidden region 52y.
- a part of the first wavelength conversion material 33 a may be contained in the back surface region 52, or a part of the second wavelength conversion material 33 b may be contained in the light receiving surface region 51.
- the first wavelength conversion material 33a is contained in the gap region 52x more than the hidden region 52y.
- the conversion efficiency of ultraviolet rays that degrade the constituent materials is improved.
- a sealing layer containing only the first wavelength conversion substance 33a for example, ultraviolet rays close to the visible range may not be converted sufficiently.
- a sealing layer containing only the second wavelength conversion substance 33b it is difficult to convert a part of short wavelength ultraviolet rays, for example.
- the concentration of the first wavelength converting material 33a (hereinafter referred to as “ ⁇ 33a ”) is preferably higher than the concentration of the second wavelength converting material 33b in the light receiving surface side region 51.
- the concentration of the second wavelength conversion material 33b (hereinafter referred to as “ ⁇ 33b ”) is preferably higher than the concentration of the first wavelength conversion material 33a in the back surface region 52.
- the second wavelength conversion material 33b that converts long-wavelength light is more easily damaged by short-wavelength light than the first wavelength conversion material 33a. Deterioration can be suppressed. That is, the first wavelength conversion material 33a converts the short wavelength light that degrades the second wavelength conversion material 33b, thereby protecting the second wavelength conversion material 33b. Long-wavelength light that cannot be converted by the first wavelength conversion material 33 a can be converted by the second wavelength conversion material 33 b that is included in the back-side region 52.
- ⁇ 33a in the light receiving surface side region 51 is 0.1 to 15% by weight with respect to the total weight of the light receiving surface side region 51 when the first wavelength conversion material 33a is an inorganic compound. Preferably, it is 1.5 to 10% by weight.
- the first wavelength conversion material 33a is an organic compound, it is preferably 0.02 to 2.0% by weight, and 0.05 to 0.8% by weight with respect to the total weight of the light receiving surface side region 51.
- ⁇ 33b in the light receiving surface side region 51 is preferably 0 to 1.5% by weight with respect to the total weight of the back surface side region 51 when the second wavelength converting material 33b is an inorganic compound, and is preferably 0 to 0. More preferably, it is 1% by weight.
- the second wavelength conversion material 33b is an organic compound, it is preferably 0 to 0.05% by weight and more preferably 0 to 0.02% by weight with respect to the total weight of the back side region 51. preferable.
- ⁇ 33a in the back side region 52 is preferably 0 to 1.5% by weight with respect to the total weight of the back side region 52 when the first wavelength converting material 33a is an inorganic compound, and is preferably 0 to 0. More preferably, it is 1% by weight.
- the first wavelength conversion material 33a is an organic compound, it is preferably 0 to 0.05% by weight, more preferably 0 to 0.02% by weight based on the total weight of the back surface region 52.
- ⁇ 33b in the gap region 52x of the back side region 52 is preferably 0.1 to 15% by weight with respect to the total weight of the gap region 52x when the second wavelength conversion material 33b is an inorganic compound. More preferably, it is 5 to 10% by weight.
- the second wavelength converting material 33b is an organic compound, it is preferably 0.02 to 2.0% by weight, and 0.05 to 0.8% by weight with respect to the total weight of the gap region 52x. It is more preferable.
- the above-described concentration distribution may be reversed. That is, in this case, ⁇ 33a ⁇ 33b in the light receiving surface side region 51 and ⁇ 33a > ⁇ 33b in the back surface region 52 can suppress double wavelength conversion and increase wavelength conversion efficiency. it can.
- the case where two types of the first wavelength conversion material 33a and the second wavelength conversion material 33b are used is exemplified, but three or more types of wavelength conversion materials may be used.
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Abstract
Description
実施形態において参照する図面は、模式的に記載されたものであり、図面に描画された構成要素の寸法比率などは、現物と異なる場合がある。具体的な寸法比率等は、以下の説明を参酌して判断されるべきである。
以下、図1~図5を参照しながら、第1実施形態である太陽電池モジュール10について詳細に説明する。図1は太陽電池モジュール10の断面図、図2は図1のA部拡大図である。図3は、図1のB部拡大図であって、比較として従来の構造を右に示す。図3では、各保護部材、導線14、及び太陽電池11の電極を省略している。図4は、封止層30の断面図である。図4においても導線14を省略している。図3及び図4では、説明の便宜上、波長変換物質33を○で示す。図5は、本実施形態の変形例を示す図である。
以下、図6を参照しながら、第2実施形態について詳細に説明する。図6は、図4と同様の封止層50の断面図である。図7は、封止層50における光の透過率と波長との関係を示す図である。図7では、比較として第1波長変換物質33a、第2波長変換物質33bの各々のみを含有する封止層の場合を右に示す。以下では、第1実施形態との相違点を主に説明するものとし、第1実施形態と同様の構成要素には同じ符号を用いて重複する説明を省略する。
Claims (6)
- 複数の太陽電池と、
前記太陽電池の受光面側に設けられた第1保護部材と、
前記太陽電池の裏面側に設けられた第2保護部材と、
前記各保護部材の間に設けられ、前記太陽電池を封止する封止層と、
特定波長の光を吸収してより長波長の光に変換する波長変換物質と、
を備え、
前記波長変換物質は、前記封止層の前記太陽電池よりも前記第2保護部材側に位置する裏面側領域であって、前記太陽電池同士の間隙に対応する間隙領域に少なくとも含有されており、
前記波長変換物質の濃度は、前記太陽電池の前記裏面と前記第2保護部材とに挟まれた領域よりも、前記間隙領域で高い、太陽電池モジュール。 - 前記波長変換物質は、第1波長変換物質と、前記第1波長変換物質よりも長波長の光を吸収して波長変換する第2波長変換物質とを含み、
前記第1波長変換物質の濃度は、前記封止層の前記太陽電池よりも前記第1保護部材側に位置する受光面側領域において、前記第2波長変換物質の濃度よりも高く、
前記第2波長変換物質の濃度は、前記裏面側領域において、前記第1波長変換物質の濃度よりも高い、請求項1に記載の太陽電池モジュール。 - 前記波長変換物質は、前記特定波長の光よりも前記太陽電池の反射光に近い波長の光に変換する、請求項1又は2に記載の太陽電池モジュール。
- 前記太陽電池は、ヘテロ接合層を含み、
前記波長変換物質は、前記ヘテロ接合層のバンドギャップ以上のエネルギーを持つ波長の光を吸収して波長変換する、請求項1~3のいずれか1項に記載の太陽電池モジュール。 - 前記封止層の前記波長変換物質を含有する領域の屈折率は、前記第1保護部材の最外層の屈折率よりも高い、請求項1~4のいずれか1項に記載の太陽電池モジュール。
- 前記太陽電池、前記第1保護部材、前記第2保護部材、及び前記封止層から構成される太陽電池パネルの側面を覆って設けられ、前記波長変換材料により波長変換された光を反射する反射体を備えた、請求項1~5のいずれか1項に記載の太陽電池モジュール。
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2015
- 2015-02-12 WO PCT/JP2015/000632 patent/WO2015129183A1/ja active Application Filing
- 2015-02-12 EP EP15754831.4A patent/EP3113233A4/en not_active Withdrawn
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2016
- 2016-08-17 US US15/239,327 patent/US10930807B2/en active Active
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JP2012230968A (ja) * | 2011-04-25 | 2012-11-22 | Hitachi Chem Co Ltd | 封止材シート及び太陽電池モジュール |
JP2013120926A (ja) * | 2011-12-06 | 2013-06-17 | Nitto Denko Corp | 太陽光集光効率を高めるためのソーラーモジュールシステムの封止材としての波長変換物質 |
JP2013254854A (ja) * | 2012-06-07 | 2013-12-19 | Sharp Corp | 太陽電池モジュールおよび太陽光発電装置 |
JP2013128153A (ja) * | 2013-03-27 | 2013-06-27 | Hitachi Ltd | 封止材シートおよび太陽電池モジュール |
Non-Patent Citations (1)
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Also Published As
Publication number | Publication date |
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EP3113233A4 (en) | 2017-03-08 |
JPWO2015129183A1 (ja) | 2017-03-30 |
EP3113233A1 (en) | 2017-01-04 |
US10930807B2 (en) | 2021-02-23 |
US20160359064A1 (en) | 2016-12-08 |
JP6583828B2 (ja) | 2019-10-02 |
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