US20160359064A1 - Solar cell module - Google Patents
Solar cell module Download PDFInfo
- Publication number
- US20160359064A1 US20160359064A1 US15/239,327 US201615239327A US2016359064A1 US 20160359064 A1 US20160359064 A1 US 20160359064A1 US 201615239327 A US201615239327 A US 201615239327A US 2016359064 A1 US2016359064 A1 US 2016359064A1
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- United States
- Prior art keywords
- wavelength conversion
- conversion material
- light
- solar cell
- wavelength
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 179
- 230000001681 protective effect Effects 0.000 claims abstract description 56
- 238000007789 sealing Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 173
- 239000008393 encapsulating agent Substances 0.000 claims description 45
- 239000000126 substance Substances 0.000 abstract 3
- 229920005989 resin Polymers 0.000 description 42
- 239000011347 resin Substances 0.000 description 42
- 150000001875 compounds Chemical class 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 239000011521 glass Substances 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 239000000975 dye Substances 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000010030 laminating Methods 0.000 description 5
- 238000010248 power generation Methods 0.000 description 5
- 239000004711 α-olefin Substances 0.000 description 5
- YNPNZTXNASCQKK-UHFFFAOYSA-N Phenanthrene Natural products C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 4
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 4
- 229920002554 vinyl polymer Polymers 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 239000007850 fluorescent dye Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 3
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- GNBHRKFJIUUOQI-UHFFFAOYSA-N fluorescein Chemical compound O1C(=O)C2=CC=CC=C2C21C1=CC=C(O)C=C1OC1=CC(O)=CC=C21 GNBHRKFJIUUOQI-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920005862 polyol Polymers 0.000 description 2
- 150000003077 polyols Chemical class 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000012463 white pigment Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920001651 Cyanoacrylate Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- MWCLLHOVUTZFKS-UHFFFAOYSA-N Methyl cyanoacrylate Chemical compound COC(=O)C(=C)C#N MWCLLHOVUTZFKS-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 125000005396 acrylic acid ester group Chemical group 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910001914 chlorine tetroxide Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Chemical compound [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920006295 polythiol Polymers 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
- YGSDEFSMJLZEOE-UHFFFAOYSA-M salicylate Chemical compound OC1=CC=CC=C1C([O-])=O YGSDEFSMJLZEOE-UHFFFAOYSA-M 0.000 description 1
- 229960001860 salicylate Drugs 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S30/00—Structural details of PV modules other than those related to light conversion
- H02S30/10—Frame structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Definitions
- Patent Literature 1 has disclosed a solar cell module that includes a first encapsulant layer not containing a wavelength conversion material and a second encapsulant layer containing a wavelength conversion material between a protective glass and a solar cell.
- the solar cell module has been required to refine usage efficiency of the incident light to improve incident photon-to-current conversion efficiency.
- the solar cell module has been desired to not only be high in the incident photon-to-current conversion efficiency but also look good and be excellent in design.
- the solar cell module of the present disclosure usage efficiency of the incident light can be refined to improve incident photon-to-current conversion efficiency.
- the solar cell module according to the present disclosure looks good and is excellent in design, for example.
- FIG. 1 is a sectional view of a solar cell module as a first embodiment.
- FIG. 2 is an enlarged view of A portion in FIG. 1 .
- FIG. 3 is an enlarged view of B portion in FIG. 1 .
- FIG. 4 is a sectional view of an encapsulant layer as the first embodiment.
- FIG. 5 is a diagram showing a modification example of the first embodiment.
- FIG. 6 is a sectional view of an encapsulant layer as a second embodiment.
- FIG. 7 is a diagram showing a relationship between a transmittance and a wavelength of light in the encapsulant layer as the second embodiment.
- a “light receiving surface” of a solar cell module and solar cell refers to a surface on which a light is mainly incident (more than 50% up to 100% of the light is incident on the light receiving surface) and a “rear surface” refers to a surface on a side opposite to the light receiving surface.
- a description “provide a first member on a second member” or the like is not necessarily intended for only a case where the first and second members directly connect with each other, unless otherwise stated. In other words, the description includes a case where another member exists between the first and second members.
- FIG. 1 is a sectional view of the solar cell module 10 and FIG. 2 is an enlarged view of A portion in FIG. 1 .
- FIG. 3 is an enlarged view of B portion in FIG. 1 and a structure of related art thereof is shown on the right side by way of comparison.
- each protective member, a conducting wire 14 , and an electrode of a solar cell 11 are omitted.
- FIG. 4 is a sectional view of an encapsulant layer 30 .
- the conducting wire 14 is also omitted in FIG. 4 .
- a wavelength conversion material 33 is denoted by “O” for the purpose of illustration.
- FIG. 5 is a diagram showing a modification example of the embodiment.
- the solar cell module 10 includes a plurality of solar cells 11 , a first protective member 12 provided on a light-receiving-surface side of the solar cells 11 , and a second protective member 13 provided on a rear-surface side of the solar cells 11 .
- the solar cells 11 are sandwiched between the first protective member 12 and the second protective member 13 and are sealed by the encapsulant layer 30 provided between the respective protective members.
- At least a gap region 32 x of a rear-surface side area 32 in the encapsulant layer 30 contains the wavelength conversion material 33 which absorbs the light of a specific wavelength and converts the light into a light of a longer wavelength.
- the wavelength conversion material 33 may be contained in only the gap region 32 x, or may be contained in substantially the entire area of the rear-surface side area 32 . In the latter case, a concentration of the wavelength conversion material 33 is set to be higher in the gap region 32 x than in a region (hidden region 32 y ) sandwiched between the rear surface of the solar cell 11 and the second protective member 13 .
- the encapsulant layer 30 is also referred to as a filler layer (filler).
- the plurality of solar cells 11 are arranged substantially on the same plane.
- the solar cells 11 that are adjacent, to each other are connected in series through the conducting wire 14 , which forms a string of the solar cells 11 .
- the conducting wire 14 is bent in a thickness direction of the module between the adjacent solar cells 11 , and attached to each of the light receiving surface of one solar cell 11 and the rear surface of the other solar cell 11 by use of an adhesive or the like.
- a part of the conducting wire 14 is extended from an end of the string and connected with a wiring material for output (not shown).
- the wiring material is drawn out from, for example, a rear side of the second protective member 13 to be drawn into a terminal box (not shown).
- the solar cell 11 , the first protective member 12 , the second protective member 13 , and the encapsulant layer 30 constitute a solar cell panel 15 .
- the solar cell panel 15 is a plate-like body having the string of the solar cells 11 sandwiched between the respective protective members as described above, and has a substantially rectangular shape in a plane view (in a case viewed from a direction vertical to the light receiving surface), for example.
- the second protective member 13 may be bent around to, for example, a lateral face 15 a of the solar cell panel 15 to cover the lateral face 15 a.
- the lateral face 15 a is a face along a thickness direction of the solar cell panel 15 .
- the first protective member 12 may include a member having translucency such as a glass substrate, a resin substrate, or a resin film, for example.
- the glass substrate is used from the viewpoint of fire resistance, durability or the like.
- a thickness of the glass substrate is not specifically limited, but may be about 2 mm to 6 mm.
- Examples of the second protective member 13 may include a transparent member the same as for the first protective member 12 and may include a non-transparent member.
- the embodiment uses the resin film as the second protective member 13 .
- the resin film is not specifically limited, but may be a polyethylene terephthalate (PET) film. From the viewpoint of lowering moisture permeability or the like, the resin film may have formed therein an inorganic compound layer of silica and the like, or a metal layer of aluminium and the like in a case where it is not assumed that the light is incident on the rear-surface side.
- a thickness of the resin film is not specifically limited, but may be 100 ⁇ m to 300 ⁇ m.
- the solar cell module 10 may include a frame 16 attached to an end edge of the solar cell panel 15 .
- the frame 16 protects the end edge of the solar cell panel 15 and is used when the solar cell module 10 is installed on a roof or the like.
- the frame 16 is made of a metal such as stainless-steel, aluminium or the like, for example, and has a main body of a hollow construction and a concave portion in which the end edge of the solar cell panel 15 is fitted.
- the solar cell module 10 may include a reflector 18 which is provided to cover the lateral face 15 a of the solar cell panel 15 .
- the reflector 18 reflects the light wavelength-converted by the wavelength conversion material 33 and confines the light to go out from the end edge of the solar cell panel 15 to the panel, functioning to increase the light incident on the solar cell 11 .
- the reflector 18 reflects also light other than the wavelength-converted light. Since the wavelength conversion material 33 having absorbed the light of a specific wavelength isotropically emits the light, installation of the reflector 18 is particularly effective in the solar cell module 10 provided with the wavelength conversion material 33 .
- the reflector 18 may cover substantially the entire lateral face 15 a and covers a light receiving surface of the first protective member 12 and a rear surface of the second protective member 13 which are located at the end edge of the solar cell panel 15 .
- the reflector 18 is limited to be provided at a portion on each protective member covered by the frame 16 .
- the reflector 18 which is, for example, a resin sheet containing a white pigment or the like is attached to the end edge of the solar cell panel 15 .
- a coating film may be formed on the end edge of the solar cell panel 15 or the concave portion of the frame 16 by use of a white paint and the coating film used as the reflector 18 .
- the adhesive 17 to which the white pigment or the like is added may be made to function as the reflector 18 .
- the solar cell 11 includes a photoelectric conversion part 20 which receives sunlight to generate carriers.
- the photoelectric conversion part 20 has, as electrodes for collecting the generated carriers, a light-receiving-surface electrode formed on the light receiving surface of the photoelectric conversion part 20 and a rear-surface electrode formed on the rear surface (neither not shown). Each electrode is electrically connected with the conducting wire 14 .
- a structure of the solar cell 11 is not limited thereto, and may have a structure in which the electrode is formed only on the rear surface of the photoelectric conversion part 20 , for example.
- the rear-surface electrode is formed to have an area larger than the light-receiving-surface electrode, and a surface having a larger electrode area (or a surface having the electrode formed thereon) may be said to be the “rear surface” of the solar cell 11 .
- the photoelectric conversion part 20 has, for example, a semiconductor substrate 21 , amorphous semiconductor layers 22 and 23 formed on the substrate, and transparent conductive layers 24 and 25 formed on the amorphous semiconductor layers.
- the semiconductor constituting the semiconductor substrate 21 include crystalline silicon (c-Si), gallium arsenide (GaAs), indium phosphide (InP) and the like.
- the amorphous semiconductor constituting the amorphous semiconductor layers 22 and 23 include i-type amorphous silicon, n-type amorphous silicon, p-type amorphous silicon and the like.
- the transparent conductive layers 24 and 25 include, a transparent conductive oxide in which metal oxide such as indium oxide (In 2 O 3 ), sine oxide (ZnO) is doped with tin (Sn), antimony (Sb) or the like, for example.
- an n-type single-crystal silicon substrate is applied to the semiconductor substrate 21 .
- the photoelectric conversion part 20 has a structure in which an i-type amorphous silicon layer, a p-type amorphous silicon layer, and the transparent conductive layer 24 are formed in this order on a light receiving surface of the n-type single-crystal silicon substrate, and an i-type amorphous silicon layer, an n-type amorphous silicon layer, and the transparent conductive layer 25 are formed in this order on a rear surface of the substrate.
- the p-type amorphous silicon layer may be formed on the rear-surface side of the n-type single-crystal silicon substrate and the n-type amorphous silicon layer may be formed on the light-receiving-surface side of the substrate, respectively.
- the photoelectric conversion part 20 has a junction (heterojunction) between the semiconductors in which optical gaps are different from each other.
- the amorphous silicon layer forming the heterojunction generally absorbs the light having a wavelength of 600 nm or less.
- the wavelength conversion material 33 contained in the encapsulant layer 30 absorbs and wavelength-converts the light of a wavelength having an energy equal to or more than a handgap of the amorphous semiconductor layers 22 and 23 , which are each a heterojunction layer.
- the encapsulant layer 30 which is provided between each protective member and the solar cell 11 functions to prevent moisture or the like from contacting the solar cell 11 .
- the encapsulant layer 30 contains the wavelength conversion material 33 in at least the gap region 32 x of the rear-surface side area 32 .
- the wavelength conversion material 33 is also contained in the light-receiving-surface side area 31 and the hidden region 32 y of the rear-surface side area 32 .
- the wavelength conversion material 33 may be contained in the end edge of the solar cell panel 15 , that is, is between the lateral face 15 a of the solar cell panel 15 and the solar cell 11 positioned at an end of the string.
- the light-receiving-surface side area 31 is an area in the encapsulant layer 30 located closer to the first protective member 12 side than the solar cell 11 .
- the rear-surface side area 32 is an area in the encapsulant layer 30 located closer to the second protective member 13 side than the solar cell 11 .
- the gap region 32 x is an area corresponding to a gap between the solar cells 11 in the rear-surface side area 32 .
- the hidden region 32 y is an area sandwiched between the rear surface of the solar cell 11 and the second protective member 13 in the rear-surface side area 32 .
- the encapsulant layer 30 is formed in a laminating process described later using a resin sheet constituting the light-receiving-surface side area 31 (hereinafter, referred to as “resin sheet 31 ”) and a resin sheet constituting the rear-surface side area 32 (hereinafter, referred to as “resin sheet 32 ”), for example.
- resin sheet 31 a resin sheet constituting the light-receiving-surface side area
- resin sheet 32 a resin sheet constituting the rear-surface side area 32
- a boundary between the light-receiving-surface side area 31 and the rear-surface side area 32 is clearly defined, but the boundary may not be confirmed in some cases, depending on a kind of the resin and conditions of the laminating process.
- the resin constituting the encapsulant layer 30 may be one having excellent adhesion to each protective member and the solar cell 11 , and unlikely to be permeable to moisture.
- the resins include an olefin-based resin obtained by polymerizing at least one kind selected from ⁇ olefin having the carbon number of 2 to 20 (e.g., polyethylene, polypropylene, a random or block copolymer of ethylene and other ⁇ olefin, etc.), an ester-based resin (e.g., polycondensate of polyol and polycarboxylic acid or acid anhydride/lower alkyl ester, etc.), a urethane-based resin (e.g., polyaddition compound of polyisocyanate and active hydrogen group-containing compound (diol, polyol, dicarboxylic acid, polycarboxylic acid, polyamine, polythiol, etc.) or the like), an epoxy-based resin (e.g., ring-open
- olefin-based resin in particular, polymer including ethylene
- olefin-based resin in particular, polymer including ethylene
- Ethylene vinyl acetate copolymer EVA
- EVA Ethylene vinyl acetate copolymer
- the thickness of the encapsulant layer 30 is not specifically limited, but the thicknesses of the light-receiving-surface side area 31 and the rear-surface side area 32 are each about 100 to 600 ⁇ m, for example.
- a high crosslink density resin is generally used for the light-receiving-surface side area 31 and a low crosslink density resin or non-crosslinked resin is generally used for the rear-surface side area 32 , depending on the structure or intended purpose (usage environment) of the solar cell module 10 .
- a refractive index of the encapsulant layer 30 may be set to be higher than a refractive index of an outermost layer of the first protective member 12 at the area containing the wavelength conversion material 33 .
- the refractive index of the encapsulant layer 30 may be set to be higher than the refractive index of a glass surface.
- the refractive index of the encapsulant layer 30 can be adjusted by, for example, adequately changing a composition of resin components.
- the wavelength conversion material 33 having absorbed the light of a specific wavelength isotropically emits the light, there exists light passing through the glass to go out from the panel, but a totally reflected component at the glass surface is increased by the adjustment of the refractive index, preventing the relevant light from going out.
- the wavelength conversion material 33 which is a material absorbing light of a specific wavelength and converting the wavelength as described above, converts light in a wavelength region contributing less to power generation into light in a wavelength region contributing largely to power generation.
- the wavelength conversion material 33 absorbs ultraviolet rays that are light of a shorter wavelength than 380 nm, for example, to convert into light of a longer wavelength (e.g., 400 to 800 nm). In this case, the wavelength conversion material 33 also contributes to deterioration suppression of the constituent material due to the ultraviolet rays.
- the wavelength conversion material 33 is one that absorbs the ultraviolet rays to emit visible light, for example, but may be a material that absorbs visible light or infrared light. In general, the wavelength conversion material 33 converts the shorter wavelength into the longer wavelength, but may be a material performing a so-called upconversion emission in which the longer wavelength is converted into the shorter wavelength. A converted wavelength depends on a kind of the solar cell 11 .
- the wavelength conversion material 33 absorbs and wavelength-converts the light of a wavelength having an energy equal to or more than a bandgap of the heterojunction layer, as described above. In other words, the wavelength conversion material 33 converts the light of the wavelength absorbed into the heterojunction layer.
- the wavelength conversion material 33 is used which can absorb light ⁇ of a wavelength ⁇ absorbed by the amorphous semiconductor layers 22 and 23 which are each the heterojunction layer to convert into light ⁇ of a wavelength ⁇ not absorbed by the semiconductor layers (see FIG. 3 ).
- ⁇ is equal to or less than 600 nm, for example.
- a part of the light ⁇ is absorbed by the amorphous semiconductor layers 22 and 23 .
- the wavelength conversion material 33 examples include semiconductor nanoparticles (quantum dot), luminescent metal complexes, organic fluorescent dyes and the like.
- semiconductor nanoparticle examples include nanoparticles of zinc oxide (ZnO), cadmium selenide (CdSe), cadmium telluride (CdTe), gallium nitride (GaN), yttrium oxide (Y 2 O 3 ), indium phosphide (InP) and the like.
- the luminescent metal complex examples include an Ir complex such as [Ir(bqn) 3 ] (PF 6 ) 3 , [Ir (dpbpy) 3 ] (PF 6 ) 3 or the like, a Ru complex such as [Ru (bqn) 3 ] (PF 6 ) 3 , [Ru (bpy) 3 ] (ClO 4 ) 2 or the like, an Eu complex such as [Eu (FOD) 3 ] phen, [Eu (TFA) 3 ] phen or the like, and a lb complex such as [Tb (FOD) 3 ]phen, [Tb (HFA) 3 ] phen or the like.
- the organic fluorescent dye examples include a rhodamine-based dye, a coumarin-based dye, a fluorescein-based dye, a perylene-based dye and the like.
- concentration distributions of the wavelength conversion material 33 in the respective areas of the encapsulant layer 30 are based on the assumption that one kind of wavelength conversion material 33 is used.
- a concentration of the wavelength conversion material 33 is designated as “ ⁇ 33 ”.
- the gap region 32 x and the hidden region 32 y are identical to each other.
- ⁇ 33 in the rear-surface side area 32 is different from each other with respect to ⁇ 33 in the rear-surface side area 32 (see FIG. 4 ). This allows the usage efficiency of the wavelength conversion material 33 to be improved, for example.
- ⁇ 33 is set to be higher in the gap region 32 x than in the hidden region 32 y. In other words, a concentration gradient of the wavelength conversion material 33 exists in the rear-surface side area 32 and the wavelength conversion material 33 is biasedly held in the gap region 32 x, for example.
- ⁇ 33 in the end edge of the solar cell panel 15 may be, for example, substantially the same as ⁇ 33 in the gap region 32 x.
- ⁇ 33 in the gap region 32 x> ⁇ 33 in the hidden region 32 y should hold is due to a difference in. an amount of incident light in the gap region 32 x and in the hidden region 32 y.
- the hidden region 32 y is a region hidden by the solar cell 11 when seen from the light-receiving-surface side as well as a region with a lower amount of incident light.
- the gap region 32 x is a region with a larger amount of incident light because the solar cell 11 does not exist on the light-receiving-surface side. Therefore, the wavelength conversion material 33 being biasedly held in the gap region 32 x is important in efficiently using the wavelength conversion material 33 , which is expensive. This allows the wavelength conversion efficiency to be enhanced while suppressing a usage amount of the wavelength conversion material 33 .
- the wavelength conversion material 33 may be biasedly held in the gap region 32 x.
- the wavelength conversion material 33 may be used which is capable of conversion into a light of a wavelength close to reflected light from the solar cell 11 .
- a wavelength conversion material 33 which absorbs the ultraviolet rays having a wavelength of 380 nm or less to convert into light having a wavelength close to the blue color (e.g., 450 to 490 nm).
- the concentration gradient of the wavelength conversion material 33 may exist in a thickness direction of the rear-surface side area 32 .
- the wavelength conversion material 33 may be contained in, for example, an area adjacent to the solar cell 11 (light-receiving-surface side area 31 ) in larger amounts than in an area adjacent to the second protective member 13 , and the closer to the second protective member 13 , the more ⁇ 33 may be decreased gradually or in a stepwise fashion.
- ⁇ 33 in the gap region 32 x is may be 0.1 to 15 wt % with respect to a total weight of. the gap region 32 x or 1.5 to 10 wt %, in a case where the wavelength conversion material 33 is an inorganic system compound such as a semiconductor nanoparticle, a luminescent metal complex and the like.
- ⁇ 33 may be 0.02 to 2.0 wt % with respect to the total weight of the gap region 32 x or 0.05 to 0.8 wt %, in a case where the wavelength conversion material 33 is an organic system compound such as an organic fluorescent dye and the like.
- ⁇ 33 in the hidden region 32 y may be 0 to 5 wt % with respect to a total weight of the hidden region 32 y or 0 to 2 wt %, in a case where the wavelength conversion material 33 is an inorganic system compound.
- ⁇ 33 may be 0 to 0.5 wt % with respect to the total weight of the hidden region 32 y or 0 to 0.1 wt %, in a case where the wavelength conversion material 33 is an organic system compound.
- ⁇ 33 in the light-receiving-surface side area 31 is substantially uniform, for example.
- the wavelength conversion material 33 may be contained in an area adjacent to the first protective member 12 in larger amounts than in an area adjacent to solar cell 11 , and the closer to the second protective member 13 , the more ⁇ 33 may be decreased gradually or in a stepwise fashion.
- ⁇ 33 in the light-receiving-surface side area 31 and ⁇ 33 in the gap region 32 x may be substantially the same as or different from each other. From the viewpoint of incident photon-to-current conversion efficiency improvement, ⁇ 33 in the light-receiving-surface side area 31 ⁇ 33 in the gap region 32 x holds, for example. In order to reduce the above contrast to make the look refined, ⁇ 33 in the light-receiving-surface side area 31 ⁇ 33 gap region 32 x may hold. In either case, both ⁇ 33 in the light-receiving-surface side area 31 and ⁇ 33 in the gap region 32 x> ⁇ 33 in the hidden region 32 y holds, for example.
- an ultraviolet-ray absorption material, an antioxidizing agent, a flame retardant or the like, besides the wavelength conversion material 33 may be added to the encapsulant layer 30 .
- a pigment of titanium oxide or the like may be added to the rear-surface side area 32 in a case where it is not assumed that the light is incident on the rear-surface side.
- the ultraviolet-ray absorption material which is a material selectively absorbing ultraviolet rays that are light of a shorter wavelength than 380 nm, does not have a wavelength-conversion function like the wavelength conversion material 33 .
- ultraviolet-ray absorption material examples include a benzotriazole-based compound, a benzophenone-based compound, a salicylate-based compound, a cyanoacrylate-based compound, a nickel-based compound, a triazine-based compound, and the like.
- the solar cell module 10 including the above structure can be manufactured by laminating the string of the solar cells 11 connected by the conducting wire 14 , by use of the resin sheet constituting the first protective member 12 , the second protective member 13 , and the encapsulant layer 30 .
- the first protective member 12 , the resin sheet 31 , the string of the solar cells 11 , the resin sheet 32 , and the second protective member 13 are laminated in this order on a heater, for example.
- This laminated body is heated to about 150° C. in a vacuum state. After that, heating is continued under an atmospheric pressure with each constituent member being pressed to the heater side to cross-link resin components in the resin sheet, obtaining the solar cell panel 15 .
- the reflector 18 , the terminal box, the frame 16 and the like are attached to the solar cell panel 15 to obtain the solar cell module 10 .
- the concentration gradient of the wavelength conversion material 33 in the rear-surface side area 32 can be formed by using a plurality of resin sheets as the resin sheet 32 in which contents of the wavelength conversion material 33 are different from each other, for example.
- a resin sheet (referred to as resin sheet X) containing the wavelength conversion material 33 in large amounts, and a resin sheet (referred to as resin sheet Y) having a lower content of the wavelength conversion material 33 than the resin sheet X or not containing the wavelength conversion material 33 are used.
- the resin sheet X is arranged in a portion corresponding to the gap region 32 x and the resin sheet Y is arranged in a portion corresponding to the hidden region 32 y.
- a method may be used in which diffusion of the wavelength conversion material 33 from the light-receiving-surface side area 31 is used.
- the resin sheet 31 containing the wavelength conversion material 33 , and the resin sheet 32 having lower content of the wavelength conversion material 33 than the resin sheet 31 or not containing the wavelength conversion material 33 are used. By laminating these, the wavelength conversion material 33 is diffused from the resin sheet 31 to a portion which is to be the gap region 32 x in the resin sheet 32 , obtaining the above concentration gradient of the wavelength conversion material 33 in the rear-surface side area 32 .
- the usage efficiency of the incident light can be refined to improve the incident photon-to-current conversion efficiency.
- efficient use of the wavelength conversion material 33 is allowed by devising the concentration distributions of the wavelength conversion material 33 particularly in the rear-surface side area 32 of the encapsulant layer 30 .
- the incident light can be used more efficiently by biasedly holding the wavelength conversion material 33 in the gap region 32 k of the rear-surface side area 32 , compared with the case where the wavelength conversion material 33 is not contained in the rear-surface side area 32 and the case where the wavelength conversion material 33 is uniformly contained in the rear- surface side area 32 .
- the wavelength conversion material 33 which emits light of a wavelength close to a reflected light from the solar cell 11 can reduce the coloristic contrast between the region where the solar cell 11 exists and the region positioned at a gap between the solar cells. This allows a product that looks good and has excellent design to be obtained.
- the structure may be used in which the wavelength conversion material 33 is contained in only the gap region 36 x.
- the wavelength conversion material 33 is substantially not contained in the light-receiving-surface side area 35 nor the hidden region 36 y of the rear-surface side area 36 .
- the concentration of the. wavelength conversion, material 33 is substantially 0% in the hidden region 36 y.
- the wavelength conversion material 33 is contained between the solar cell 11 positioned at the end of the string and the lateral face 15 a of the solar cell panel 15 at the concentration substantially the same as the gap region 36 x, for example.
- the structure is particularly directed to the purpose of improving the design by reducing the contrast.
- FIG. 6 is a sectional view of an encapsulant layer 50 similar to FIG. 4 .
- FIG. 7 is a diagram showing a relationship between a transmittance and a wavelength of light in the encapsulant layer 50 .
- FIG. 7 shows on the right a case of an encapsulant layer which contains only each of a first wavelength conversion material 33 a and a second wavelength conversion material 33 b by way of comparison.
- a different point from the first embodiment is mainly explained, and the same components as the first embodiment are designated by the same reference signs and duplicated description is omitted.
- a structure of the encapsulant layer 50 is different from the encapsulant layer 30 in the first embodiment.
- the encapsulant layer 50 is different from the encapsulant layer 30 , which contains only one kind of wavelength conversion material 33 , in that it contains two kinds, namely the first wavelength conversion material 33 a and the second wavelength conversion material 33 b.
- the second wavelength conversion material 33 b is a material which absorbs and wavelength-converts light of a longer wavelength than the first wavelength conversion material 33 a.
- the first wavelength conversion, material 33 a and the second wavelength conversion material 33 b have at least the maximal absorption wavelength not overlapping each other, for example. Moreover, at least the maximum emission wavelength of the first wavelength conversion material 33 a and the maximal absorption wavelength of the second wavelength conversion material 33 b may not overlap each other. It is preferable that the first wavelength conversion material 33 a substantially does not absorb the ultraviolet rays or the like absorbed by the second wavelength conversion material 33 b, and the second wavelength conversion material 33 b substantially does not absorb the light wavelength-converted by the first wavelength conversion material 33 a.
- the first wavelength conversion material 33 a and the second wavelength conversion material 33 b are not specifically limited in individual materials so long as a combination thereof satisfies the above relationship, and the same material as the wavelength conversion material 33 may be used, for example.
- a perylene-based dye may be used for the first wavelength conversion material 33 a and a fluorescein-based dye may be used for the second wavelength conversion material 33 b.
- materials may be applied which are of the same kind as each other (e.g., perylene-based dye) and different from each other in wavelength conversion characteristics (absorption wavelength and emission wavelength).
- the first wavelength conversion material 33 a is contained in a light-receiving-surface side area 51
- the second wavelength conversion material 33 b is contained in a rear-surface side area 52
- a concentration of the second wavelength conversion material 33 b in the rear-surface side area 52 is higher in a gap region 52 x than in a hidden region 52 y.
- a part of the first wavelength conversion material 33 a may be contained in the rear-surface side area 52
- a part of the second wavelength conversion material 33 b may be contained in the light-receiving-surface side area 51 .
- the first wavelength conversion material 33 a is contained in the gap region 52 x in larger amounts than in the hidden region 52 y, for example.
- two kinds that are the first wavelength conversion material 33 a and the second wavelength conversion material 33 b are used to improve a conversion efficiency of the ultraviolet rays which contribute less to power generation and deteriorate the constituent material, for example.
- the ultraviolet rays close to the visible region for example, cannot be sufficiently converted in some cases.
- a part of the ultraviolet rays of a shorter wavelength for example, is difficult to convert.
- a concentration of the first wavelength conversion material 33 a (hereinafter, referred to as “ ⁇ 33a ”) may be higher in the light-receiving-surface side area 51 than the concentration of the second wavelength conversion material 33 b.
- the concentration of the second wavelength conversion material 33 b (hereinafter, referred to as “ ⁇ 33b ”) may be higher in the rear-surface side area 52 than the concentration of the first wavelength conversion material 33 a.
- the second wavelength conversion material 33 b converting the light of a longer wavelength is likely to suffer damage from the light of a shorter wavelength compared to the first wavelength conversion material 33 a, but deterioration of the second wavelength conversion material 33 b can be suppressed by applying the relevant concentration distribution.
- the first wavelength conversion material 33 a converts the light of a shorter wavelength which deteriorates the second wavelength conversion material 33 b, protecting the second wavelength Conversion material 33 b.
- the light of a longer wavelength which the first wavelength conversion material 33 a cannot convert may be converted by the second wavelength conversion material.
- ⁇ 33a in the light-receiving-surface side area 51 may be 0.1 to 15 wt % with respect to a total weight of the light-receiving-surface side area 51 or 1.5 to 10 wt %, in a case where the first wavelength conversion material 33 a is an inorganic system compound.
- ⁇ 33a may be 0.02 to 2.0 wt % with respect to the total weight of the light-receiving-surface side area 51 or 0.05 to 0.8 wt %, in a case where the first wavelength conversion material 33 a is an organic system compound.
- ⁇ 33b in the light-receiving-surface side area 51 may be 0 to 1.5 wt % with respect to the total weight of the rear-surface side area 51 or 0 to 0.1 wt % in a case where the second wavelength conversion material 33 b is an inorganic system compound.
- ⁇ 33b may be 0 to 0.05 wt % with respect to the total weight of the rear-surface side area 51 or 0 to 0.02 wt % in a case where the second wavelength conversion material 33 b is an organic system compound.
- ⁇ 33a in the rear-surface side area 52 may be 0 to 1.5 wt % with respect to a total weight of the rear-surface side area 52 or 0 to 0.1 wt % in a case where the first wavelength conversion material 33 a is an inorganic system compound may be 0 to 0.05 wt % with respect to the total weight of the rear-surface side area 52 or 0 to 0.02 wt % in a ease where the first wavelength conversion material 33 a is an organic system compound.
- ⁇ 33b in gap region 52 x of the rear-surface side area 52 may be 0.1 to 15 wt % with respect to a total weight of the gap region 52 x or 1.5 to 10 wt %, in a case where the second wavelength conversion material 33 b is an inorganic system compound.
- ⁇ 33b may be 0.02 to 2.0 wt % with respect to the total weight of the gap region 52 x or 0.05 to 0.8 wt %, in a case where the second wavelength conversion material 33 b is an organic system compound.
- ⁇ 33a is set to be lower than ⁇ 33b in the light-receiving-surface side area 51 and ⁇ 33a is set to be higher than ⁇ 33b in the rear-surface side area 52 to suppress duplicated wavelength conversion, enhancing the wavelength conversion efficiency.
- wavelength conversion material 33 a and the second wavelength conversion material 33 b are used, but three or more kinds of wavelength conversion materials may be used.
Abstract
Description
- The present application is a continuation under 35 U.S.C. §120 of PCT/JP2015/000632, filed Feb. 12, 2015, which is incorporated herein by reference and which claimed priority to Japanese Patent Application No. 2014-035110 filed Feb. 26, 2014. The present application likewise claims priority under 35 U.S.C. §119 to Japanese Patent Application No. 2014-035110 filed Feb. 26, 2014, the entire content of which is also incorporated herein by reference.
- The present disclosure relates to a solar cell module.
- There has been known a solar cell module that includes a wavelength conversion material which absorbs light of a specific wavelength and converts the light into light of a longer wavelength. By use of such a solar cell module, it is possible to convert, of incident light, light in a wavelength region contributing less to power generation into light in a wavelength region contributing largely to power generation. For example, Patent Literature 1 has disclosed a solar cell module that includes a first encapsulant layer not containing a wavelength conversion material and a second encapsulant layer containing a wavelength conversion material between a protective glass and a solar cell.
- PATENT LITERATURE 1: WO2011/148951
- Meanwhile, the solar cell module has been required to refine usage efficiency of the incident light to improve incident photon-to-current conversion efficiency. In addition, the solar cell module has been desired to not only be high in the incident photon-to-current conversion efficiency but also look good and be excellent in design.
- A solar cell module according to the present disclosure includes a plurality of solar cells, a first protective member provided on a light-receiving surface side of the solar cells, a second protective member provided on a rear-surface side of the solar cells, a encapsulant layer provided between the respective protective members and sealing the solar cells, and a wavelength conversion material absorbing light of a specific wavelength and converting the light into light of a longer wavelength, in which the Wavelength conversion material is contained in at least a gap region which is in a rear-surface side area in the encapsulant layer located closer to a side of the second protective material than the solar cell and corresponds to a gap between the solar cells, and a concentration of the wavelength conversion material is higher in the gap region than in a region sandwiched by the rear surface of the solar cell and the second protective member.
- According to the solar cell module of the present disclosure, usage efficiency of the incident light can be refined to improve incident photon-to-current conversion efficiency. In addition, the solar cell module according to the present disclosure looks good and is excellent in design, for example.
-
FIG. 1 is a sectional view of a solar cell module as a first embodiment. -
FIG. 2 is an enlarged view of A portion inFIG. 1 . -
FIG. 3 is an enlarged view of B portion inFIG. 1 . -
FIG. 4 is a sectional view of an encapsulant layer as the first embodiment. -
FIG. 5 . is a diagram showing a modification example of the first embodiment. -
FIG. 6 is a sectional view of an encapsulant layer as a second embodiment. -
FIG. 7 is a diagram showing a relationship between a transmittance and a wavelength of light in the encapsulant layer as the second embodiment. - Hereinafter, a description is given in detail of an example of embodiments with reference to the drawings.
- The drawings referred to in the embodiments are schematically expressed, and a size ratio or the like of a component drawn in the figure may be different from an actual object in some cases. The concrete size ratio or the like should be determined in consideration of the following explanation.
- In the description, a “light receiving surface” of a solar cell module and solar cell refers to a surface on which a light is mainly incident (more than 50% up to 100% of the light is incident on the light receiving surface) and a “rear surface” refers to a surface on a side opposite to the light receiving surface. Further, a description “provide a first member on a second member” or the like is not necessarily intended for only a case where the first and second members directly connect with each other, unless otherwise stated. In other words, the description includes a case where another member exists between the first and second members.
- Hereinafter, a description is given in detail of a
solar cell module 10 as a first embodiment with reference toFIG. 1 toFIG. 5 .FIG. 1 is a sectional view of thesolar cell module 10 andFIG. 2 is an enlarged view of A portion inFIG. 1 .FIG. 3 is an enlarged view of B portion inFIG. 1 and a structure of related art thereof is shown on the right side by way of comparison. InFIG. 3 , each protective member, a conductingwire 14, and an electrode of asolar cell 11 are omitted.FIG. 4 is a sectional view of anencapsulant layer 30. The conductingwire 14 is also omitted inFIG. 4 . InFIG. 3 andFIG. 4 , awavelength conversion material 33 is denoted by “O” for the purpose of illustration.FIG. 5 is a diagram showing a modification example of the embodiment. - As shown in
FIG. 1 , thesolar cell module 10 includes a plurality ofsolar cells 11, a firstprotective member 12 provided on a light-receiving-surface side of thesolar cells 11, and a secondprotective member 13 provided on a rear-surface side of thesolar cells 11. Thesolar cells 11 are sandwiched between the firstprotective member 12 and the secondprotective member 13 and are sealed by theencapsulant layer 30 provided between the respective protective members. As is described later in detail, at least agap region 32 x of a rear-surface side area 32 in theencapsulant layer 30, thegap region 32 x corresponding to a gap between thesolar cells 11, contains thewavelength conversion material 33 which absorbs the light of a specific wavelength and converts the light into a light of a longer wavelength. In other words, thewavelength conversion material 33 may be contained in only thegap region 32 x, or may be contained in substantially the entire area of the rear-surface side area 32. In the latter case, a concentration of thewavelength conversion material 33 is set to be higher in thegap region 32 x than in a region (hidden region 32 y) sandwiched between the rear surface of thesolar cell 11 and the secondprotective member 13. In the former case, since the concentration of thewavelength conversion material 33 in thehidden region 32 y is 0%, the concentration of thewavelength conversion material 33 is obviously higher in thegap region 32 x than in thehidden region 32 y. Theencapsulant layer 30 is also referred to as a filler layer (filler). - In the embodiment, the plurality of
solar cells 11 are arranged substantially on the same plane. Thesolar cells 11 that are adjacent, to each other are connected in series through the conductingwire 14, which forms a string of thesolar cells 11. The conductingwire 14 is bent in a thickness direction of the module between the adjacentsolar cells 11, and attached to each of the light receiving surface of onesolar cell 11 and the rear surface of the othersolar cell 11 by use of an adhesive or the like. A part of the conductingwire 14 is extended from an end of the string and connected with a wiring material for output (not shown). The wiring material is drawn out from, for example, a rear side of the secondprotective member 13 to be drawn into a terminal box (not shown). - The
solar cell 11, the firstprotective member 12, the secondprotective member 13, and theencapsulant layer 30 constitute asolar cell panel 15. Thesolar cell panel 15 is a plate-like body having the string of thesolar cells 11 sandwiched between the respective protective members as described above, and has a substantially rectangular shape in a plane view (in a case viewed from a direction vertical to the light receiving surface), for example. The secondprotective member 13 may be bent around to, for example, alateral face 15 a of thesolar cell panel 15 to cover thelateral face 15 a. Thelateral face 15 a is a face along a thickness direction of thesolar cell panel 15. - Examples of the first
protective member 12 may include a member having translucency such as a glass substrate, a resin substrate, or a resin film, for example. Of these, the glass substrate is used from the viewpoint of fire resistance, durability or the like. A thickness of the glass substrate is not specifically limited, but may be about 2 mm to 6 mm. - Examples of the second
protective member 13 may include a transparent member the same as for the firstprotective member 12 and may include a non-transparent member. The embodiment uses the resin film as the secondprotective member 13. The resin film is not specifically limited, but may be a polyethylene terephthalate (PET) film. From the viewpoint of lowering moisture permeability or the like, the resin film may have formed therein an inorganic compound layer of silica and the like, or a metal layer of aluminium and the like in a case where it is not assumed that the light is incident on the rear-surface side. A thickness of the resin film is not specifically limited, but may be 100 μm to 300 μm. - The
solar cell module 10 may include aframe 16 attached to an end edge of thesolar cell panel 15. Theframe 16 protects the end edge of thesolar cell panel 15 and is used when thesolar cell module 10 is installed on a roof or the like. Theframe 16 is made of a metal such as stainless-steel, aluminium or the like, for example, and has a main body of a hollow construction and a concave portion in which the end edge of thesolar cell panel 15 is fitted. An adhesive 17 of a silicone resin-based adhesive or the like, for example, is filled in a gap between the concave portion of theframe 16 and thesolar cell panel 15. - As shown in
FIG. 2 , thesolar cell module 10 may include areflector 18 which is provided to cover thelateral face 15 a of thesolar cell panel 15. Thereflector 18 reflects the light wavelength-converted by thewavelength conversion material 33 and confines the light to go out from the end edge of thesolar cell panel 15 to the panel, functioning to increase the light incident on thesolar cell 11. In general, thereflector 18 reflects also light other than the wavelength-converted light. Since thewavelength conversion material 33 having absorbed the light of a specific wavelength isotropically emits the light, installation of thereflector 18 is particularly effective in thesolar cell module 10 provided with thewavelength conversion material 33. - The
reflector 18 may cover substantially the entirelateral face 15 a and covers a light receiving surface of the firstprotective member 12 and a rear surface of the secondprotective member 13 which are located at the end edge of thesolar cell panel 15. However, thereflector 18 is limited to be provided at a portion on each protective member covered by theframe 16. Thereflector 18 which is, for example, a resin sheet containing a white pigment or the like is attached to the end edge of thesolar cell panel 15. Alternatively, a coating film may be formed on the end edge of thesolar cell panel 15 or the concave portion of theframe 16 by use of a white paint and the coating film used as thereflector 18. Moreover, the adhesive 17 to which the white pigment or the like is added may be made to function as thereflector 18. - As shown in
FIG. 3 , thesolar cell 11 includes a photoelectric conversion part 20 which receives sunlight to generate carriers. The photoelectric conversion part 20 has, as electrodes for collecting the generated carriers, a light-receiving-surface electrode formed on the light receiving surface of the photoelectric conversion part 20 and a rear-surface electrode formed on the rear surface (neither not shown). Each electrode is electrically connected with theconducting wire 14. However, a structure of thesolar cell 11 is not limited thereto, and may have a structure in which the electrode is formed only on the rear surface of the photoelectric conversion part 20, for example. Note that the rear-surface electrode is formed to have an area larger than the light-receiving-surface electrode, and a surface having a larger electrode area (or a surface having the electrode formed thereon) may be said to be the “rear surface” of thesolar cell 11. - The photoelectric conversion part 20 has, for example, a semiconductor substrate 21, amorphous semiconductor layers 22 and 23 formed on the substrate, and transparent
conductive layers conductive layers - In the embodiment, an n-type single-crystal silicon substrate is applied to the semiconductor substrate 21. The photoelectric conversion part 20 has a structure in which an i-type amorphous silicon layer, a p-type amorphous silicon layer, and the transparent
conductive layer 24 are formed in this order on a light receiving surface of the n-type single-crystal silicon substrate, and an i-type amorphous silicon layer, an n-type amorphous silicon layer, and the transparentconductive layer 25 are formed in this order on a rear surface of the substrate. Alternatively, the p-type amorphous silicon layer may be formed on the rear-surface side of the n-type single-crystal silicon substrate and the n-type amorphous silicon layer may be formed on the light-receiving-surface side of the substrate, respectively. In other words, the photoelectric conversion part 20 has a junction (heterojunction) between the semiconductors in which optical gaps are different from each other. The amorphous silicon layer forming the heterojunction (thickness: several nm to several tens of nm) generally absorbs the light having a wavelength of 600 nm or less. - As described later in detail, the
wavelength conversion material 33 contained in theencapsulant layer 30 absorbs and wavelength-converts the light of a wavelength having an energy equal to or more than a handgap of the amorphous semiconductor layers 22 and 23, which are each a heterojunction layer. - Hereinafter, a description is further given of the structure of the
encapsulant layer 30 with reference toFIG. 3 andFIG. 4 . - The
encapsulant layer 30 which is provided between each protective member and thesolar cell 11 functions to prevent moisture or the like from contacting thesolar cell 11. Theencapsulant layer 30 contains thewavelength conversion material 33 in at least thegap region 32 x of the rear-surface side area 32. As shown inFIG. 3 andFIG. 4 , in the embodiment, thewavelength conversion material 33 is also contained in the light-receiving-surface side area 31 and the hiddenregion 32 y of the rear-surface side area 32. Moreover, thewavelength conversion material 33 may be contained in the end edge of thesolar cell panel 15, that is, is between thelateral face 15 a of thesolar cell panel 15 and thesolar cell 11 positioned at an end of the string. - Here, the light-receiving-
surface side area 31 is an area in theencapsulant layer 30 located closer to the firstprotective member 12 side than thesolar cell 11. The rear-surface side area 32 is an area in theencapsulant layer 30 located closer to the secondprotective member 13 side than thesolar cell 11. Thegap region 32 x is an area corresponding to a gap between thesolar cells 11 in the rear-surface side area 32. The hiddenregion 32 y is an area sandwiched between the rear surface of thesolar cell 11 and the secondprotective member 13 in the rear-surface side area 32. A description is given later of concentration distributions of thewavelength conversion material 33 in the respective areas of theencapsulant layer 30, particularly, the rear-surface side area 32. - The
encapsulant layer 30 is formed in a laminating process described later using a resin sheet constituting the light-receiving-surface side area 31 (hereinafter, referred to as “resin sheet 31”) and a resin sheet constituting the rear-surface side area 32 (hereinafter, referred to as “resin sheet 32”), for example. InFIG. 4 , a boundary between the light-receiving-surface side area 31 and the rear-surface side area 32 is clearly defined, but the boundary may not be confirmed in some cases, depending on a kind of the resin and conditions of the laminating process. - The resin constituting the
encapsulant layer 30 may be one having excellent adhesion to each protective member and thesolar cell 11, and unlikely to be permeable to moisture. Specifically, examples of the resins include an olefin-based resin obtained by polymerizing at least one kind selected from α olefin having the carbon number of 2 to 20 (e.g., polyethylene, polypropylene, a random or block copolymer of ethylene and other α olefin, etc.), an ester-based resin (e.g., polycondensate of polyol and polycarboxylic acid or acid anhydride/lower alkyl ester, etc.), a urethane-based resin (e.g., polyaddition compound of polyisocyanate and active hydrogen group-containing compound (diol, polyol, dicarboxylic acid, polycarboxylic acid, polyamine, polythiol, etc.) or the like), an epoxy-based resin (e.g., ring-opening polymer of polyepoxide, polyaddition compound of polyepoxide and the active hydrogen group-containing compound, etc.), and a copolymer of α olefin and carboxylic acid vinyl, acrylic acid ester, or other vinyl monomer. - Preferable are the olefin-based resin (in particular, polymer including ethylene), and the copolymer of α olefin and carboxylic acid vinyl. Ethylene vinyl acetate copolymer (EVA) may be as the copolymer of α olefin and carboxylic acid vinyl.
- The thickness of the
encapsulant layer 30 is not specifically limited, but the thicknesses of the light-receiving-surface side area 31 and the rear-surface side area 32 are each about 100 to 600μm, for example. A high crosslink density resin is generally used for the light-receiving-surface side area 31 and a low crosslink density resin or non-crosslinked resin is generally used for the rear-surface side area 32, depending on the structure or intended purpose (usage environment) of thesolar cell module 10. - A refractive index of the
encapsulant layer 30 may be set to be higher than a refractive index of an outermost layer of the firstprotective member 12 at the area containing thewavelength conversion material 33. In other words, in a case where the firstprotective member 12 is the glass substrate, the refractive index of theencapsulant layer 30 may be set to be higher than the refractive index of a glass surface. The refractive index of theencapsulant layer 30 can be adjusted by, for example, adequately changing a composition of resin components. Since thewavelength conversion material 33 having absorbed the light of a specific wavelength isotropically emits the light, there exists light passing through the glass to go out from the panel, but a totally reflected component at the glass surface is increased by the adjustment of the refractive index, preventing the relevant light from going out. - The
wavelength conversion material 33, which is a material absorbing light of a specific wavelength and converting the wavelength as described above, converts light in a wavelength region contributing less to power generation into light in a wavelength region contributing largely to power generation. Thewavelength conversion material 33 absorbs ultraviolet rays that are light of a shorter wavelength than 380 nm, for example, to convert into light of a longer wavelength (e.g., 400 to 800 nm). In this case, thewavelength conversion material 33 also contributes to deterioration suppression of the constituent material due to the ultraviolet rays. - The
wavelength conversion material 33 is one that absorbs the ultraviolet rays to emit visible light, for example, but may be a material that absorbs visible light or infrared light. In general, thewavelength conversion material 33 converts the shorter wavelength into the longer wavelength, but may be a material performing a so-called upconversion emission in which the longer wavelength is converted into the shorter wavelength. A converted wavelength depends on a kind of thesolar cell 11. - In a case where the
solar cell 11 has the heterojunction layer, thewavelength conversion material 33 absorbs and wavelength-converts the light of a wavelength having an energy equal to or more than a bandgap of the heterojunction layer, as described above. In other words, thewavelength conversion material 33 converts the light of the wavelength absorbed into the heterojunction layer. In the embodiment, thewavelength conversion material 33 is used which can absorb light α of a wavelength λα absorbed by the amorphous semiconductor layers 22 and 23 which are each the heterojunction layer to convert into light β of a wavelength λβ not absorbed by the semiconductor layers (seeFIG. 3 ). λα is equal to or less than 600 nm, for example. On the other hand, in a case of using anencapsulant layer 100 in which thewavelength conversion material 33 like this does not exist, a part of the light α is absorbed by the amorphous semiconductor layers 22 and 23. - Concrete examples of the
wavelength conversion material 33 include semiconductor nanoparticles (quantum dot), luminescent metal complexes, organic fluorescent dyes and the like. Examples of the semiconductor nanoparticle include nanoparticles of zinc oxide (ZnO), cadmium selenide (CdSe), cadmium telluride (CdTe), gallium nitride (GaN), yttrium oxide (Y2O3), indium phosphide (InP) and the like. Examples of the luminescent metal complex include an Ir complex such as [Ir(bqn)3] (PF6)3, [Ir (dpbpy)3] (PF6)3 or the like, a Ru complex such as [Ru (bqn)3] (PF6)3, [Ru (bpy)3] (ClO4)2 or the like, an Eu complex such as [Eu (FOD)3] phen, [Eu (TFA)3] phen or the like, and a lb complex such as [Tb (FOD)3]phen, [Tb (HFA)3] phen or the like. Examples of the organic fluorescent dye include a rhodamine-based dye, a coumarin-based dye, a fluorescein-based dye, a perylene-based dye and the like. - Hereinafter, a description is given of concentration distributions of the
wavelength conversion material 33 in the respective areas of theencapsulant layer 30. The embodiment is based on the assumption that one kind ofwavelength conversion material 33 is used. In the following description, a concentration of thewavelength conversion material 33 is designated as “ρ33”. - The
gap region 32 x and the hiddenregion 32 y are - different from each other with respect to ρ33 in the rear-surface side area 32 (see
FIG. 4 ). This allows the usage efficiency of thewavelength conversion material 33 to be improved, for example. In the case where thewavelength conversion material 33 is contained in substantially the entire area of the rear-surface side area 32, ρ33 is set to be higher in thegap region 32 x than in the hiddenregion 32 y. In other words, a concentration gradient of thewavelength conversion material 33 exists in the rear-surface side area 32 and thewavelength conversion material 33 is biasedly held in thegap region 32 x, for example. Additionally, ρ33 in the end edge of thesolar cell panel 15 may be, for example, substantially the same as ρ33 in thegap region 32 x. - The reason why ρ33 in the
gap region 32 x>ρ 33 in the hiddenregion 32 y should hold is due to a difference in. an amount of incident light in thegap region 32 x and in the hiddenregion 32 y. In other words, the hiddenregion 32 y is a region hidden by thesolar cell 11 when seen from the light-receiving-surface side as well as a region with a lower amount of incident light. On the other hand, thegap region 32 x is a region with a larger amount of incident light because thesolar cell 11 does not exist on the light-receiving-surface side. Therefore, thewavelength conversion material 33 being biasedly held in thegap region 32 x is important in efficiently using thewavelength conversion material 33, which is expensive. This allows the wavelength conversion efficiency to be enhanced while suppressing a usage amount of thewavelength conversion material 33. - Moreover, also from the viewpoint of design improvement of the
solar cell module 10, thewavelength conversion material 33 may be biasedly held in thegap region 32 x. In other words, since a contrast of hue is large between a region where thesolar cell 11 exists and a region positioned at a gap between thesolar cells 11, the contrast is reduced by biasedly holding thewavelength conversion material 33 in thegap region 32 x. In this case, thewavelength conversion material 33 may be used which is capable of conversion into a light of a wavelength close to reflected light from thesolar cell 11. For example, in a case where thesolar cell 11 involves a blue color (reflected light is blue), awavelength conversion material 33 is used which absorbs the ultraviolet rays having a wavelength of 380 nm or less to convert into light having a wavelength close to the blue color (e.g., 450 to 490 nm). - In the rear-
surface side area 32, the closer to thegap region 32 x, the more may be increased gradually or in a stepwise fashion. Additionally, the concentration gradient of thewavelength conversion material 33 may exist in a thickness direction of the rear-surface side area 32. Thewavelength conversion material 33 may be contained in, for example, an area adjacent to the solar cell 11 (light-receiving-surface side area 31) in larger amounts than in an area adjacent to the secondprotective member 13, and the closer to the secondprotective member 13, the more ρ33 may be decreased gradually or in a stepwise fashion. - Concretely, ρ33 in the
gap region 32 x is may be 0.1 to 15 wt % with respect to a total weight of. thegap region 32 x or 1.5 to 10 wt %, in a case where thewavelength conversion material 33 is an inorganic system compound such as a semiconductor nanoparticle, a luminescent metal complex and the like. ρ33 may be 0.02 to 2.0 wt % with respect to the total weight of thegap region 32 x or 0.05 to 0.8 wt %, in a case where thewavelength conversion material 33 is an organic system compound such as an organic fluorescent dye and the like. ρ33 in the hiddenregion 32 y may be 0 to 5 wt % with respect to a total weight of the hiddenregion 32 y or 0 to 2 wt %, in a case where thewavelength conversion material 33 is an inorganic system compound. ρ33 may be 0 to 0.5 wt % with respect to the total weight of the hiddenregion 32 y or 0 to 0.1 wt %, in a case where thewavelength conversion material 33 is an organic system compound. - ρ33 in the light-receiving-
surface side area 31 is substantially uniform, for example. Alternatively, thewavelength conversion material 33 may be contained in an area adjacent to the firstprotective member 12 in larger amounts than in an area adjacent tosolar cell 11, and the closer to the secondprotective member 13, the more ρ33 may be decreased gradually or in a stepwise fashion. - ρ33 in the light-receiving-
surface side area 31 and ρ33 in thegap region 32 x may be substantially the same as or different from each other. From the viewpoint of incident photon-to-current conversion efficiency improvement, ρ33 in the light-receiving-surface side area 31≧ρ33 in thegap region 32 x holds, for example. In order to reduce the above contrast to make the look refined, ρ33 in the light-receiving-surface side area 31≦ρ33 gap region 32 x may hold. In either case, both ρ33 in the light-receiving-surface side area 31 and ρ33 in thegap region 32 x>ρ 33 in the hiddenregion 32 y holds, for example. - Note that an ultraviolet-ray absorption material, an antioxidizing agent, a flame retardant or the like, besides the
wavelength conversion material 33, may be added to theencapsulant layer 30. A pigment of titanium oxide or the like may be added to the rear-surface side area 32 in a case where it is not assumed that the light is incident on the rear-surface side. The ultraviolet-ray absorption material, which is a material selectively absorbing ultraviolet rays that are light of a shorter wavelength than 380 nm, does not have a wavelength-conversion function like thewavelength conversion material 33. Concrete examples of the ultraviolet-ray absorption material include a benzotriazole-based compound, a benzophenone-based compound, a salicylate-based compound, a cyanoacrylate-based compound, a nickel-based compound, a triazine-based compound, and the like. - The
solar cell module 10 including the above structure can be manufactured by laminating the string of thesolar cells 11 connected by theconducting wire 14, by use of the resin sheet constituting the firstprotective member 12, the secondprotective member 13, and theencapsulant layer 30. In a laminate device, the firstprotective member 12, theresin sheet 31, the string of thesolar cells 11, theresin sheet 32, and the secondprotective member 13 are laminated in this order on a heater, for example. This laminated body is heated to about 150° C. in a vacuum state. After that, heating is continued under an atmospheric pressure with each constituent member being pressed to the heater side to cross-link resin components in the resin sheet, obtaining thesolar cell panel 15. Finally, thereflector 18, the terminal box, theframe 16 and the like are attached to thesolar cell panel 15 to obtain thesolar cell module 10. - The concentration gradient of the
wavelength conversion material 33 in the rear-surface side area 32 can be formed by using a plurality of resin sheets as theresin sheet 32 in which contents of thewavelength conversion material 33 are different from each other, for example. As a concrete example, a resin sheet (referred to as resin sheet X) containing thewavelength conversion material 33 in large amounts, and a resin sheet (referred to as resin sheet Y) having a lower content of thewavelength conversion material 33 than the resin sheet X or not containing thewavelength conversion material 33 are used. Then, in the laminating process, the resin sheet X is arranged in a portion corresponding to thegap region 32 x and the resin sheet Y is arranged in a portion corresponding to the hiddenregion 32 y. - Alternatively, a method may be used in which diffusion of the
wavelength conversion material 33 from the light-receiving-surface side area 31 is used. For example, theresin sheet 31 containing thewavelength conversion material 33, and theresin sheet 32 having lower content of thewavelength conversion material 33 than theresin sheet 31 or not containing thewavelength conversion material 33 are used. By laminating these, thewavelength conversion material 33 is diffused from theresin sheet 31 to a portion which is to be thegap region 32 x in theresin sheet 32, obtaining the above concentration gradient of thewavelength conversion material 33 in the rear-surface side area 32. - As described above, according to the
solar cell module 10 having the above structure, the usage efficiency of the incident light can be refined to improve the incident photon-to-current conversion efficiency. In other words, in thesolar cell module 10, efficient use of thewavelength conversion material 33 is allowed by devising the concentration distributions of thewavelength conversion material 33 particularly in the rear-surface side area 32 of theencapsulant layer 30. The incident light can be used more efficiently by biasedly holding thewavelength conversion material 33 in the gap region 32 k of the rear-surface side area 32, compared with the case where thewavelength conversion material 33 is not contained in the rear-surface side area 32 and the case where thewavelength conversion material 33 is uniformly contained in the rear-surface side area 32. - Further, adding to the
gap region 32 x thewavelength conversion material 33 which emits light of a wavelength, close to a reflected light from thesolar cell 11 can reduce the coloristic contrast between the region where thesolar cell 11 exists and the region positioned at a gap between the solar cells. This allows a product that looks good and has excellent design to be obtained. - Note that, as shown in
FIG. 5 , the structure may be used in which thewavelength conversion material 33 is contained in only thegap region 36 x. In the example shown inFIG. 5 , thewavelength conversion material 33 is substantially not contained in the light-receiving-surface side area 35 nor the hiddenregion 36 y of the rear-surface side area 36. In other words, the concentration of the. wavelength conversion,material 33 is substantially 0% in the hiddenregion 36 y. In this case, thewavelength conversion material 33 is contained between thesolar cell 11 positioned at the end of the string and thelateral face 15 a of thesolar cell panel 15 at the concentration substantially the same as thegap region 36 x, for example. The structure is particularly directed to the purpose of improving the design by reducing the contrast. - Hereinafter, a description is given in detail of a second embodiment with reference to
FIG. 6 .FIG. 6 is a sectional view of anencapsulant layer 50 similar toFIG. 4 .FIG. 7 is a diagram showing a relationship between a transmittance and a wavelength of light in theencapsulant layer 50.FIG. 7 shows on the right a case of an encapsulant layer which contains only each of a firstwavelength conversion material 33 a and a secondwavelength conversion material 33 b by way of comparison. In the following description, a different point from the first embodiment is mainly explained, and the same components as the first embodiment are designated by the same reference signs and duplicated description is omitted. - In the second embodiment, a structure of the
encapsulant layer 50 is different from theencapsulant layer 30 in the first embodiment. Concretely, theencapsulant layer 50 is different from theencapsulant layer 30, which contains only one kind ofwavelength conversion material 33, in that it contains two kinds, namely the firstwavelength conversion material 33 a and the secondwavelength conversion material 33 b. The secondwavelength conversion material 33 b is a material which absorbs and wavelength-converts light of a longer wavelength than the firstwavelength conversion material 33 a. - The first wavelength conversion,
material 33 a and the secondwavelength conversion material 33 b have at least the maximal absorption wavelength not overlapping each other, for example. Moreover, at least the maximum emission wavelength of the firstwavelength conversion material 33 a and the maximal absorption wavelength of the secondwavelength conversion material 33 b may not overlap each other. It is preferable that the firstwavelength conversion material 33 a substantially does not absorb the ultraviolet rays or the like absorbed by the secondwavelength conversion material 33 b, and the secondwavelength conversion material 33 b substantially does not absorb the light wavelength-converted by the firstwavelength conversion material 33 a. - The first
wavelength conversion material 33 a and the secondwavelength conversion material 33 b are not specifically limited in individual materials so long as a combination thereof satisfies the above relationship, and the same material as thewavelength conversion material 33 may be used, for example. As an example of combination, a perylene-based dye may be used for the firstwavelength conversion material 33 a and a fluorescein-based dye may be used for the secondwavelength conversion material 33 b. To the firstwavelength conversion material 33 a and the secondwavelength conversion material 33 b, materials may be applied which are of the same kind as each other (e.g., perylene-based dye) and different from each other in wavelength conversion characteristics (absorption wavelength and emission wavelength). - In examples shown in
FIG. 6 , the firstwavelength conversion material 33 a is contained in a light-receiving-surface side area 51, and the secondwavelength conversion material 33 b is contained in a rear-surface side area 52. A concentration of the secondwavelength conversion material 33 b in the rear-surface side area 52 is higher in agap region 52 x than in a hiddenregion 52 y. Moreover, a part of the firstwavelength conversion material 33 a may be contained in the rear-surface side area 52, or a part of the secondwavelength conversion material 33 b may be contained in the light-receiving-surface side area 51. In the case where a part of the firstwavelength conversion material 33 a is contained in the rear-surface side area 52, the firstwavelength conversion material 33 a is contained in thegap region 52 x in larger amounts than in the hiddenregion 52 y, for example. - As shown in
FIG. 7 , two kinds that are the firstwavelength conversion material 33 a and the secondwavelength conversion material 33 b are used to improve a conversion efficiency of the ultraviolet rays which contribute less to power generation and deteriorate the constituent material, for example. In a case of the encapsulant layer containing only the firstwavelength conversion material 33 a, the ultraviolet rays close to the visible region, for example, cannot be sufficiently converted in some cases. On the other hand, in a case of the encapsulant layer containing only the secondwavelength conversion material 33 b, a part of the ultraviolet rays of a shorter wavelength, for example, is difficult to convert. Using in combination the firstwavelength conversion material 33 a and the secondwavelength conversion material 33 b makes it possible to remove disadvantages in a case where either is used alone. - A concentration of the first
wavelength conversion material 33 a (hereinafter, referred to as “ρ33a”) may be higher in the light-receiving-surface side area 51 than the concentration of the secondwavelength conversion material 33 b. In addition, the concentration of the secondwavelength conversion material 33 b (hereinafter, referred to as “ρ33b”) may be higher in the rear-surface side area 52 than the concentration of the firstwavelength conversion material 33 a. The secondwavelength conversion material 33 b converting the light of a longer wavelength is likely to suffer damage from the light of a shorter wavelength compared to the firstwavelength conversion material 33 a, but deterioration of the secondwavelength conversion material 33 b can be suppressed by applying the relevant concentration distribution. In other words, the firstwavelength conversion material 33 a converts the light of a shorter wavelength which deteriorates the secondwavelength conversion material 33 b, protecting the secondwavelength Conversion material 33 b. The light of a longer wavelength which the firstwavelength conversion material 33 a cannot convert may be converted by the second wavelength conversion material. 33 b contained in the rear-surface side area 52 in large amounts. - Concretely, ρ33a in the light-receiving-
surface side area 51 may be 0.1 to 15 wt % with respect to a total weight of the light-receiving-surface side area 51 or 1.5 to 10 wt %, in a case where the firstwavelength conversion material 33 a is an inorganic system compound. ρ33a may be 0.02 to 2.0 wt % with respect to the total weight of the light-receiving-surface side area 51 or 0.05 to 0.8 wt %, in a case where the firstwavelength conversion material 33 a is an organic system compound. ρ33b in the light-receiving-surface side area 51 may be 0 to 1.5 wt % with respect to the total weight of the rear-surface side area 51 or 0 to 0.1 wt % in a case where the secondwavelength conversion material 33 b is an inorganic system compound. ρ33b may be 0 to 0.05 wt % with respect to the total weight of the rear-surface side area 51 or 0 to 0.02 wt % in a case where the secondwavelength conversion material 33 b is an organic system compound. - ρ33a in the rear-
surface side area 52 may be 0 to 1.5 wt % with respect to a total weight of the rear-surface side area 52 or 0 to 0.1 wt % in a case where the firstwavelength conversion material 33 a is an inorganic system compound may be 0 to 0.05 wt % with respect to the total weight of the rear-surface side area 52 or 0 to 0.02 wt % in a ease where the firstwavelength conversion material 33 a is an organic system compound. ρ33b ingap region 52 x of the rear-surface side area 52 may be 0.1 to 15 wt % with respect to a total weight of thegap region 52 x or 1.5 to 10 wt %, in a case where the secondwavelength conversion material 33 b is an inorganic system compound. ρ33b may be 0.02 to 2.0 wt % with respect to the total weight of thegap region 52 x or 0.05 to 0.8 wt %, in a case where the secondwavelength conversion material 33 b is an organic system compound. - Note that in a case where materials are required to be used in which an emission wavelength of the first
wavelength conversion material 33 a and an absorption wavelength of the secondwavelength conversion material 33 b overlap each other in large amounts, concentration distributions described above, for example inverted. In other words, in this case, ρ33a is set to be lower than ρ33b in the light-receiving-surface side area 51 and ρ33a is set to be higher than ρ33b in the rear-surface side area 52 to suppress duplicated wavelength conversion, enhancing the wavelength conversion efficiency. - In the embodiment, the case is shown where two kinds of wavelength conversion material, namely the first
wavelength conversion material 33 a and the secondwavelength conversion material 33 b, are used, but three or more kinds of wavelength conversion materials may be used. - 10 solar cell module, 11 solar cell, 12 first protective member, 13 second protective member, 14 conducting wire, 15 solar cell panel, 15 a lateral face, 16 frame, 17 adhesive, 18 reflector, 20 photoelectric conversion part, 21 semiconductor substrate, 22, 23 amorphous semiconductor layer, 24, 25 transparent conductive layer, 30, 50, 100 encapsulant layer, 31, 35, 51 light-receiving-surface side area, 32, 36, 52 rear-surface side area, 33 wavelength conversion material, 33 a first wavelength conversion material, 33 b second wavelength conversion material, 32 x, 36 x, 52 x gap region, 32 y, 36 y, 52 y hidden region
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CN110998866A (en) * | 2017-08-10 | 2020-04-10 | 株式会社钟化 | Solar cell module |
EP3651211A4 (en) * | 2017-08-10 | 2020-05-27 | Kaneka Corporation | Solar cell module |
US11469339B2 (en) * | 2017-08-10 | 2022-10-11 | Kaneka Corporation | Solar cell module |
CN110998866B (en) * | 2017-08-10 | 2022-12-06 | 株式会社钟化 | Solar cell module |
TWI684321B (en) * | 2017-11-29 | 2020-02-01 | 大陸商東泰高科裝備科技有限公司 | Frame compressing device and film drawing method |
CN113066886A (en) * | 2019-12-31 | 2021-07-02 | 财团法人工业技术研究院 | Solar cell module |
US11695089B2 (en) | 2019-12-31 | 2023-07-04 | Industrial Technology Research Institute | Solar cell modules |
Also Published As
Publication number | Publication date |
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JP6583828B2 (en) | 2019-10-02 |
JPWO2015129183A1 (en) | 2017-03-30 |
WO2015129183A1 (en) | 2015-09-03 |
EP3113233A1 (en) | 2017-01-04 |
EP3113233A4 (en) | 2017-03-08 |
US10930807B2 (en) | 2021-02-23 |
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