JPWO2015129183A1 - 太陽電池モジュール - Google Patents
太陽電池モジュール Download PDFInfo
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910020366 ClO 4 Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 150000008366 benzophenones Chemical class 0.000 description 1
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- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
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- 229960000956 coumarin Drugs 0.000 description 1
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- NLCKLZIHJQEMCU-UHFFFAOYSA-N cyano prop-2-enoate Chemical class C=CC(=O)OC#N NLCKLZIHJQEMCU-UHFFFAOYSA-N 0.000 description 1
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- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
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- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S30/00—Structural details of PV modules other than those related to light conversion
- H02S30/10—Frame structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
実施形態において参照する図面は、模式的に記載されたものであり、図面に描画された構成要素の寸法比率などは、現物と異なる場合がある。具体的な寸法比率等は、以下の説明を参酌して判断されるべきである。
以下、図1〜図5を参照しながら、第1実施形態である太陽電池モジュール10について詳細に説明する。図1は太陽電池モジュール10の断面図、図2は図1のA部拡大図である。図3は、図1のB部拡大図であって、比較として従来の構造を右に示す。図3では、各保護部材、導線14、及び太陽電池11の電極を省略している。図4は、封止層30の断面図である。図4においても導線14を省略している。図3及び図4では、説明の便宜上、波長変換物質33を○で示す。図5は、本実施形態の変形例を示す図である。
以下、図6を参照しながら、第2実施形態について詳細に説明する。図6は、図4と同様の封止層50の断面図である。図7は、封止層50における光の透過率と波長との関係を示す図である。図7では、比較として第1波長変換物質33a、第2波長変換物質33bの各々のみを含有する封止層の場合を右に示す。以下では、第1実施形態との相違点を主に説明するものとし、第1実施形態と同様の構成要素には同じ符号を用いて重複する説明を省略する。
Claims (6)
- 複数の太陽電池と、
前記太陽電池の受光面側に設けられた第1保護部材と、
前記太陽電池の裏面側に設けられた第2保護部材と、
前記各保護部材の間に設けられ、前記太陽電池を封止する封止層と、
特定波長の光を吸収してより長波長の光に変換する波長変換物質と、
を備え、
前記波長変換物質は、前記封止層の前記太陽電池よりも前記第2保護部材側に位置する裏面側領域であって、前記太陽電池同士の間隙に対応する間隙領域に少なくとも含有されており、
前記波長変換物質の濃度は、前記太陽電池の前記裏面と前記第2保護部材とに挟まれた領域よりも、前記間隙領域で高い、太陽電池モジュール。 - 前記波長変換物質は、第1波長変換物質と、前記第1波長変換物質よりも長波長の光を吸収して波長変換する第2波長変換物質とを含み、
前記第1波長変換物質の濃度は、前記封止層の前記太陽電池よりも前記第1保護部材側に位置する受光面側領域において、前記第2波長変換物質の濃度よりも高く、
前記第2波長変換物質の濃度は、前記裏面側領域において、前記第1波長変換物質の濃度よりも高い、請求項1に記載の太陽電池モジュール。 - 前記波長変換物質は、前記特定波長の光よりも前記太陽電池の反射光に近い波長の光に変換する、請求項1又は2に記載の太陽電池モジュール。
- 前記太陽電池は、ヘテロ接合層を含み、
前記波長変換物質は、前記ヘテロ接合層のバンドギャップ以上のエネルギーを持つ波長の光を吸収して波長変換する、請求項1〜3のいずれか1項に記載の太陽電池モジュール。 - 前記封止層の前記波長変換物質を含有する領域の屈折率は、前記第1保護部材の最外層の屈折率よりも高い、請求項1〜4のいずれか1項に記載の太陽電池モジュール。
- 前記太陽電池、前記第1保護部材、前記第2保護部材、及び前記封止層から構成される太陽電池パネルの側面を覆って設けられ、前記波長変換材料により波長変換された光を反射する反射体を備えた、請求項1〜5のいずれか1項に記載の太陽電池モジュール。
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JP2014035110 | 2014-02-26 | ||
JP2014035110 | 2014-02-26 | ||
PCT/JP2015/000632 WO2015129183A1 (ja) | 2014-02-26 | 2015-02-12 | 太陽電池モジュール |
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JPWO2015129183A1 true JPWO2015129183A1 (ja) | 2017-03-30 |
JP6583828B2 JP6583828B2 (ja) | 2019-10-02 |
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US (1) | US10930807B2 (ja) |
EP (1) | EP3113233A4 (ja) |
JP (1) | JP6583828B2 (ja) |
WO (1) | WO2015129183A1 (ja) |
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WO2019031023A1 (ja) * | 2017-08-10 | 2019-02-14 | 株式会社カネカ | 太陽電池モジュール |
CN108123671A (zh) * | 2017-11-29 | 2018-06-05 | 北京创昱科技有限公司 | 一种框架压缩装置及薄膜拉伸方法 |
US11695089B2 (en) | 2019-12-31 | 2023-07-04 | Industrial Technology Research Institute | Solar cell modules |
EP3846227B1 (en) * | 2019-12-31 | 2022-05-04 | Industrial Technology Research Institute | Solar cell modules |
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- 2015-02-12 JP JP2016505028A patent/JP6583828B2/ja not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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EP3113233A4 (en) | 2017-03-08 |
EP3113233A1 (en) | 2017-01-04 |
WO2015129183A1 (ja) | 2015-09-03 |
US10930807B2 (en) | 2021-02-23 |
US20160359064A1 (en) | 2016-12-08 |
JP6583828B2 (ja) | 2019-10-02 |
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