WO2015124014A1 - Cavité réactionnelle et appareil de traitement au plasma - Google Patents

Cavité réactionnelle et appareil de traitement au plasma Download PDF

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Publication number
WO2015124014A1
WO2015124014A1 PCT/CN2014/092878 CN2014092878W WO2015124014A1 WO 2015124014 A1 WO2015124014 A1 WO 2015124014A1 CN 2014092878 W CN2014092878 W CN 2014092878W WO 2015124014 A1 WO2015124014 A1 WO 2015124014A1
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WO
WIPO (PCT)
Prior art keywords
connecting member
coils
reaction chamber
sets
power
Prior art date
Application number
PCT/CN2014/092878
Other languages
English (en)
Chinese (zh)
Inventor
李兴存
韦刚
李东三
管长乐
邱明达
赵隆超
宋铭明
Original Assignee
北京北方微电子基地设备工艺研究中心有限责任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 北京北方微电子基地设备工艺研究中心有限责任公司 filed Critical 北京北方微电子基地设备工艺研究中心有限责任公司
Priority to US15/119,525 priority Critical patent/US10854482B2/en
Priority to KR1020167025399A priority patent/KR101852582B1/ko
Priority to SG11201606759TA priority patent/SG11201606759TA/en
Priority to MYPI2016703072A priority patent/MY193542A/en
Publication of WO2015124014A1 publication Critical patent/WO2015124014A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • the present invention relates to the field of semiconductor device manufacturing, and in particular to a reaction chamber and a plasma processing apparatus.
  • TSV Through Silicon Vias
  • interconnect technology is widely used in three-dimensional stacked packages, MEMS packages and other processes.
  • a remote high density plasma Remote High Density Plasma, hereinafter referred to as Remote HDP
  • Remote HDP Remote High Density Plasma
  • the distance between the coil and the plasma generating coil is relatively large, so that the concentration of the radical in the region where the substrate is located is high, and the ion density is low, so that the loss of the mask layer caused by ion bombardment can be reduced, and the etching rate can be simultaneously achieved.
  • Etching the purpose of the selection ratio.
  • FIG. 1 is a schematic illustration of a prior art reaction chamber.
  • the reaction chamber 1 includes an electrostatic chuck 2, a dielectric window 3, a coil 4, a first power source 5, and a second power source 6.
  • the electrostatic chuck 2 is disposed in a bottom region in the reaction chamber 1 for carrying the substrate.
  • the dielectric window 3 is located vertically above the electrostatic chuck 2 and has a large distance from the electrostatic chuck 2.
  • the coil 4 surrounds the outside of the dielectric window 3 and is electrically connected to the first power source 5; the first power source 5 applies power to the coil 4, which generates an electromagnetic field in the reaction chamber 1 and will pass into the reaction chamber 1
  • the process gas inside is excited into a plasma.
  • the second power source 6 is electrically connected to the electrostatic chuck 2, and is used for loading power to the electrostatic chuck 2 to generate a bias on the electrostatic chuck 2, and attracting plasma to bombard the substrate placed on the electrostatic chuck 2, so that The plasma undergoes a physical and/or chemical reaction with the substrate to complete the etching process on the substrate.
  • the first power source 5 It is necessary to apply a higher power to the coil 4 so that the substrate in the reaction chamber 1 is located
  • the plasma has a higher density to achieve a higher etch rate.
  • the skin current generated due to the skin effect sharply increases, and it is opposite to the current in the coil 4, so that part of the power that the first power source 5 loads to the coil 4 is consumed, lowering
  • the coil 4 is used to generate an electromagnetic field and to stimulate the effective power of the plasma.
  • the higher power applied to the coil 4 by the first power source 5 also enhances the intensity of the active particle attachment, ion bombardment dielectric window, optical radiation, etc. in the plasma, resulting in a higher temperature rise of the dielectric window 3 and The temperature gradient across the dielectric window 3 is greater, making the dielectric window 3 more susceptible to cracking.
  • the present invention aims to at least solve one of the technical problems existing in the prior art, and proposes a reaction chamber and a plasma processing apparatus having a plurality of sets of coils, which can reduce the skin current effect due to a single set of coils.
  • the power applied to the coil is used to excite the plasma more, which improves the ionization rate of the process gas; at the same time, the uniformity of the plasma distribution is macroscopically increased, so that the active particles in the plasma are attached and The intensity of ion bombardment of the dielectric window and optical radiation is reduced, thereby reducing the temperature rise and temperature gradient of the dielectric window during the process, reducing the probability of breakage of the dielectric window, and prolonging the service life of the dielectric window.
  • a reaction chamber comprising a cavity, a dielectric window and a power supply unit, the dielectric window being disposed above and sealingly connected to the cavity, and the dielectric window
  • the outer sides are circumferentially spaced apart in a plurality of sets of coils, and the power supply unit applies power to the plurality of sets of coils.
  • the power supply unit comprises a power source and a matcher, and the plurality of sets of coils are connected to the power source via the matcher.
  • the number of the power sources is one; the plurality of sets of coils are connected in parallel with each other and electrically connected to the power source; and, the winding directions of the plurality of sets of coils are the same, so that when the power source loads power to the plurality of sets of coils, The current in each set of coils is in the same direction.
  • the number of the power sources is plural, and the number of the matching devices corresponds to each of the The power source is electrically coupled to the set via one of the matchers; and, when the power source loads power to the coil, the directions of currents in the plurality of sets of coils are all the same.
  • the number of the power sources is plural, the number of the matching devices is corresponding thereto, and each of the power sources is electrically connected to one or more coils via one of the matchers; and corresponding to each of the power sources
  • the winding directions of the one or more coils are the same, so that when the power source loads power to the set of coils, the direction of current in each group of coils is the same.
  • the reaction chamber further includes a first connecting member, a second connecting member, a third connecting member and a fourth connecting member; the first connecting member and the second connecting member are disposed in a vertical direction, and the plurality of One end of the set coil is connected to the first connecting member, and the other end is connected to the second connecting member; two ends of the third connecting member are respectively connected with the power source and the first connecting member; one end and the second connecting member of the fourth connecting member The connectors are connected and the other end is grounded.
  • the position of the first connecting member connected to the third connecting member and the position of the second connecting member connected to the fourth connecting member are set according to the current required in the plurality of sets of coils.
  • one end of the third connecting member is connected to an intermediate position of the first connecting member; and one end of the fourth connecting member is connected to an intermediate position of the second connecting member.
  • the number of turns of each of the coils is plural; and the interval between adjacent sets of coils is at least twice the spacing between adjacent two turns of each set of coils.
  • the present invention also provides a plasma processing apparatus comprising a reaction chamber using the above reaction chamber provided by the present invention.
  • the reaction chamber provided by the present invention has a plurality of sets of coils arranged on the outer side of the dielectric window in a vertical direction so that the process gas is electrically introduced into the reaction chamber and sequentially ionized by electromagnetic fields generated by the plurality of sets of coils, and in the process,
  • the generated plasma diffuses in the horizontal and vertical directions, so that the plasma is uniformly distributed in the reaction chamber, thereby improving the uniformity of the process.
  • the process gas is ionized multiple times by using multiple sets of coils, and the ionization of the process can be improved. effectiveness.
  • the power for exciting the plasma is separately applied to the plurality of sets of coils so that each set of coils Low power, can reduce the effect of skin current in multiple sets of coils, so that the power loaded into multiple sets of coils is used more to excite the plasma, thereby increasing the effective power applied to the coil; and, reducing the plasma
  • the strength of the active particles, the ion bombardment medium window, and the intensity of the light radiation, and the temperature rise of the dielectric window during the process and the temperature gradient prevent the dielectric window from rupturing, thereby prolonging the service life of the dielectric window.
  • the plasma processing apparatus provided by the invention adopts the above reaction chamber provided by the invention to uniformly distribute plasma in the reaction chamber and increase the density of plasma in the reaction chamber, thereby improving process uniformity and process efficiency. At the same time, it can also increase the effective power for exciting the plasma, and reduce the temperature rise and temperature gradient of the dielectric window during the process, preventing it from rupturing and prolonging its service life.
  • Figure 1 is a schematic view of a conventional reaction chamber
  • FIG. 2 is a schematic structural view of a reaction chamber according to an embodiment of the present invention.
  • FIG. 3 is a schematic view showing a connection between a coil and a power source according to an embodiment of the present invention
  • FIG. 4 is a schematic view showing a position where the first connecting member, the second connecting member, the third connecting member, and the fourth connecting member are disposed;
  • Figure 5 is a schematic view of the coil located above
  • Figure 6 is a schematic illustration of the coil located below.
  • FIG. 2 is a schematic structural diagram of a reaction chamber according to an embodiment of the present invention.
  • the reaction chamber 10 is used for processing a workpiece to be processed, and includes a cavity 100, a cover 1001, a carrier 11, a dielectric window 12, a coil 15, a gas supply system 20, a power supply unit, and a bias current.
  • Source 13 The cover 1001 is disposed above the cavity 100 of the reaction chamber 10, and houses a dielectric window 12, a coil 15 and a power supply unit.
  • a carrier device 11 is provided inside the reaction chamber 10 for carrying the workpiece 14 to be processed.
  • the dielectric window 12 is disposed on the cavity 100 of the reaction chamber 10 and is vertically above the carrier device 11, and is made of a non-conductive material such as alumina ceramic or quartz.
  • the outer sides of the dielectric window 12 are circumferentially spaced apart from each other by a plurality of sets of coils 15 at a distance from each other in the vertical direction.
  • the gas supply system 20 is configured to pass a process gas into the reaction chamber 10, which includes an intake line and a pneumatic valve (not shown) disposed on the intake line and a mass flow controller (not shown) Wherein, the process gas is introduced into the reaction chamber 10 through the intake line, the pneumatic valve is used to open and close the intake line, and the mass flow controller is used to control the flow rate of the process gas introduced into the reaction chamber 10.
  • the power supply unit loads power to the plurality of sets of coils 15, which include a power source 16 and a matcher 17; wherein the power source 16 is coupled to the coil 15 for loading power to the coil 15 to generate an electromagnetic field within the reaction chamber 10 that will pass The process gas in the reaction chamber 10 is excited as a plasma; the matcher 17 is connected between the power source 16 and the coil 15 for regulating the load impedance of the power source 16 to match the output impedance of the power source 16, thereby reducing The power of the power source 16 is reflected so that the output power of the power source 16 can be fully loaded onto the coil 15.
  • the biasing power source 13 is coupled to the carrier device 11 for applying bias power to the carrier device 11 to bias the carrier device 11 to attract the plasma and the workpiece 14 placed on the carrier device 11 to be physically and/or chemical reaction.
  • the power supply unit includes a power source 16, and the plurality of sets of coils 15 are electrically connected to the power source 16.
  • the reaction chamber 10 includes a first connecting member 101, a second connecting member 102, a third connecting member 103, and a fourth connecting member 104; wherein, the first connecting member 101 and the first connecting member 101
  • the two connecting members 102 are disposed in a vertical direction, the first ends of the plurality of sets of coils 15 are connected to the first connecting member 101, the second end is connected to the second connecting member 102, and the two ends of the third connecting member 103 are respectively connected to the power source 16 and
  • the first connecting member 101 is connected, and one end of the fourth connecting member 104 is connected to the second connecting member 102, and the other end is grounded.
  • a plurality of sets of coils 15 are arranged in parallel. And, in the plurality of sets of coils 15, the direction from the first end connected to the first connecting member 101 to the second end connected to the second connecting member 102 is the same, that is, the winding directions of the plurality of sets of the coils 15 are the same, thereby making the power supply 16 loading power to multiple sets of coils 15 At the same time, the current directions in the plurality of sets of coils 15 are the same to generate an electromagnetic field in the same direction.
  • the process gas is introduced into the reaction chamber 10 through the intake pipe, and flows from the top to the bottom of the carrier device 11; during the flow thereof, the process gas passes through the corresponding regions of the plurality of coils 15 in sequence, The set of coils 15 ionizes the process gas in sequence.
  • the process of generating plasma in the reaction chamber 10 will be described by taking a process in which the process gas is ionized when the number of the coils 15 is two. Specifically, as shown in FIG. 2, FIG. 3, FIG. 5 and FIG.
  • the process gas when the process gas flows to the corresponding region of the coil 15' located above, the process gas is ionized in the electromagnetic field generated by the coil 15', wherein Part of the process gas is directly ionized into electrons and ions, and more gases are ionized into free radicals; wherein the content of free radicals in the ionized process gas is generally 100-1000 times that of the process gas.
  • the process gas continues to flow downward, at which time it contains a small amount of ions and a large amount of free radicals, and also contains a large amount of un-ionized process gas;
  • the process gas is ionized for the second time in the electromagnetic field generated by the coil 15 ⁇ , during which the process gas is not ionized during the first ionization process.
  • a small part of it will be directly ionized into electrons and ions, and more parts will be ionized into free radicals.
  • the free radicals ionized during the first ionization will be further ionized into electrons and ion.
  • both the coil 15' and the coil 15" ionize part of the process gas into electrons and ions, thereby generating plasma in the reaction chamber 10.
  • the electromagnetic field generated by the coil 15 in the reaction chamber 10 is generated.
  • it is non-uniform, so that the plasma is generated at a different rate in the corresponding region of the coil 15.
  • the plasma generation rate in the region corresponding to the axial center of the coil 15 is higher than that in the reaction chamber 10 near the dielectric window.
  • the rate of generation of plasma in the region of 12 thus, in the process, the plasma is diffused in a horizontal direction from a region where the plasma generation rate is high to a region where the plasma generation rate is low.
  • the coil 15 ' The coil 15 is spaced apart from each other, and no plasma is generated in the region between the two. Therefore, the plasma in the region where the plasma generation rate is high in the region corresponding to the coil 15' and the coil 15A is toward the coil 15'. And the area between the coil 15 ⁇ is diffused, so that the coil 15' and the line In the region where the plasma generation rate is high in the region corresponding to the circle 15 ⁇ , the rate of plasma generation is balanced with the rate of outward diffusion, and the region where the plasma generation rate is low in the region corresponding to the coil 15' and the coil 15 ⁇ is increased. And the density of the plasma in the region between the coil 15' and the coil 15", which in turn causes the plasma to be evenly distributed within the reaction chamber 10.
  • the plasma is evenly distributed within the reaction chamber 10, which can reduce the power applied to the coil 15 by the power source 16 due to the effect of the skin current in the plurality of coils 15 being used in the reaction chamber.
  • An electromagnetic field is generated in 10 to excite the process gas into a plasma, thereby increasing the density of the plasma in the reaction chamber 10; and, at the same time, the power source 16 can load the coil 15 with higher power due to a decrease in the skin current. Increase power capacity.
  • the output power of the power source 16 is distributed to the plurality of sets of coils 15 so that the power in each set of the coils 15 is low, so that the attachment of the active particles in the plasma in the region surrounded by the dielectric window 12 can be reduced.
  • the strength of the ion bombardment dielectric window 12 and the light radiation and the like, and the temperature rise of the dielectric window 12 and the temperature gradient of the surface thereof are prevented to be broken, thereby prolonging the service life of the dielectric window 12.
  • the outer side of the dielectric window 12 is surrounded by a plurality of sets of coils 15 arranged at intervals in the vertical direction, so that the process gas is passed into the reaction chamber 10 and sequentially ionized by electromagnetic fields generated by the plurality of sets of coils 15, And in the process, the generated plasma diffuses in the horizontal and vertical directions, so that the plasma is evenly distributed in the reaction chamber 10, thereby improving the uniformity of the process; meanwhile, the process gas is repeatedly used by the plurality of coils 15 Ionization can also improve the ionization efficiency of the process.
  • the power for exciting the plasma is respectively applied to the plurality of coils 15 so that the power on each coil 15 is low, and the skin in the plurality of coils 15 can be reduced.
  • the effect of the current causes the power loaded into the plurality of coils 15 to be used more to excite the plasma, thereby increasing the effective power applied to the coil 15; and, also, reducing the attachment of active particles in the plasma, ion bombardment medium.
  • the intensity of the action of the window 12 and the light radiation, etc. reduces the temperature rise and temperature gradient of the dielectric window 12 during the process, preventing it from rupturing, thereby extending its useful life.
  • the number of turns of each set of coils 15 is multi-turn; and the interval between adjacent sets of coils 15 is at least twice the spacing between adjacent two turns of each set of coils 15, such that
  • the plasma in the region where the plasma generation rate is high can have sufficient space for its diffusion, so that the plasma generation rate and the diffusion velocity in the region are balanced, so that the plasma is uniformly distributed in the reaction chamber 10. .
  • the cross-sectional shape of each of the plurality of sets of coils 15 in a plane parallel to the axial direction of the coil may be rectangular, circular or circular.
  • the position of the first connecting member 101 connected to the third connecting member 103 is set according to the current required in the plurality of sets of coils 15, and the second connecting member 102 is connected to the fourth connecting member 104. s position.
  • the position of the first connecting member 101 connected to the third connecting member 103 may be determined according to the actual requirements of the circuit, and/or the connection of the second connecting member 102 to the fourth connecting member 104 may be determined. position.
  • the connection position of the first connecting member 101 and the third connecting member 103 and/or the connecting position of the second connecting member 102 and the fourth connecting member 104 are different, resulting in different resistances in the circuits of the plurality of sets of coils 15, thereby causing corresponding circuits The current is different.
  • the current in the circuit of the plurality of sets of coils 15 can be changed, and further The intensity of the electromagnetic field generated by the plurality of sets of coils 15 is varied, and finally the efficiency of the plasma generated by the plurality of sets of coils 15 is adjusted.
  • one end of the third connecting member 103 is connected to the intermediate position of the first connecting member 101; one end of the fourth connecting member 104 is connected to the intermediate position of the second connecting member 102.
  • the power supply unit includes a power source 16, and the plurality of coils 15 are connected in parallel and electrically connected to the power source 16, but the present invention is not limited thereto.
  • the number of power sources 16 is not limited thereto. There may be more than one, the number of matchers 17 corresponding thereto, each power source 16 being electrically connected to more than one set of coils 15 via a matcher 17; and corresponding to each power source 16, said set of coils
  • the winding directions of 15 are identical such that when the power source 16 is loaded with power to the set of coils 15, the direction of current in each set of coils 15 is the same to produce an electromagnetic field in the same direction.
  • an embodiment of the present invention further provides a plasma processing apparatus including a reaction chamber using the reaction chamber provided by the above embodiment of the present invention.
  • the plasma processing apparatus provided in this embodiment adopts the above reaction chamber provided by the invention to uniformly distribute plasma in the reaction chamber and increase the density of plasma in the reaction chamber, thereby improving process uniformity and process. Efficiency; at the same time, it can also increase the effective power for exciting the plasma, and reduce the temperature rise and temperature gradient of the dielectric window during the process to prevent it from rupturing and prolong its service life.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
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Abstract

La présente invention concerne une cavité réactionnelle et un appareil de traitement au plasma, comprenant une cavité, une fenêtre diélectrique et une unité d'alimentation électrique. La fenêtre diélectrique est disposée au-dessus de la cavité et hermétiquement connectée à la cavité, et l'extérieur de la fenêtre diélectrique est entouré de multiples ensembles de bobines à des intervalles pratiqués le long de la direction verticale. Les multiples ensembles de bobines sont chargés par l'unité d'alimentation électrique. La cavité réactionnelle et l'appareil de traitement au plasma selon la présente invention peuvent répartir uniformément le plasma dans la cavité réactionnelle et augmenter la densité du plasma à l'intérieur de celle-ci, ce qui permet d'améliorer l'homogénéité du processus et l'efficacité d'ionisation. Par ailleurs, la cavité réactionnelle et l'appareil de traitement au plasma selon la présente invention peuvent également augmenter la puissance effective d'excitation du plasma, et abaisser l'étendue d'augmentation de température et le gradient de température de la fenêtre diélectrique au cours du processus, et ainsi, empêcher la fenêtre diélectrique de se fracturer et de prolonger leur durée de vie.
PCT/CN2014/092878 2014-02-24 2014-12-03 Cavité réactionnelle et appareil de traitement au plasma WO2015124014A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US15/119,525 US10854482B2 (en) 2014-02-24 2014-12-03 Reaction chamber and plasma processing apparatus
KR1020167025399A KR101852582B1 (ko) 2014-02-24 2014-12-03 반응 캐비티와 플라즈마 공정 장치
SG11201606759TA SG11201606759TA (en) 2014-02-24 2014-12-03 Reaction chamber and plasma processing apparatus
MYPI2016703072A MY193542A (en) 2014-02-24 2014-12-03 Reaction chamber and plasma processing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410063219.6 2014-02-24
CN201410063219.6A CN104862671B (zh) 2014-02-24 2014-02-24 一种反应腔室及等离子体加工设备

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WO2015124014A1 true WO2015124014A1 (fr) 2015-08-27

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US (1) US10854482B2 (fr)
KR (1) KR101852582B1 (fr)
CN (1) CN104862671B (fr)
MY (1) MY193542A (fr)
SG (1) SG11201606759TA (fr)
TW (1) TWI534891B (fr)
WO (1) WO2015124014A1 (fr)

Families Citing this family (16)

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Publication number Priority date Publication date Assignee Title
CN106611643A (zh) * 2015-10-23 2017-05-03 北京北方微电子基地设备工艺研究中心有限责任公司 立体线圈、反应腔室及半导体加工设备
CN106255304A (zh) * 2016-07-19 2016-12-21 中国人民解放军装甲兵工程学院 一种圆筒内等离子体密度计算方法
CN108573846A (zh) * 2017-03-09 2018-09-25 北京北方华创微电子装备有限公司 等离子体腔室及等离子体加工设备
CN109036817B (zh) * 2017-06-08 2021-09-17 北京北方华创微电子装备有限公司 电感耦合线圈和工艺腔室
CN109148073B (zh) * 2017-06-16 2022-10-21 北京北方华创微电子装备有限公司 线圈组件、等离子体发生装置及等离子体设备
KR101986744B1 (ko) * 2017-09-27 2019-06-07 주식회사 유진테크 플라즈마 처리 장치 및 방법
CN109801824B (zh) * 2017-11-15 2022-07-22 北京北方华创微电子装备有限公司 介质窗组件及反应腔室
EP3588533A1 (fr) * 2018-06-21 2020-01-01 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Source de plasma et son procédé de fonctionnement
JP7190566B2 (ja) * 2018-10-30 2022-12-15 北京北方華創微電子装備有限公司 誘導コイル・アッセンブリおよび反応チャンバ
KR102070544B1 (ko) * 2019-04-17 2020-01-29 주식회사 기가레인 플라즈마 안테나 및 이를 포함하는 플라즈마 처리장치
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CN115602406A (zh) * 2021-07-09 2023-01-13 北京北方华创微电子装备有限公司（Cn） 用于产生等离子体的线圈装置及半导体工艺设备
CN115497797A (zh) * 2022-05-27 2022-12-20 北京北方华创微电子装备有限公司 用于产生等离子体的线圈结构及半导体工艺设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263188A (ja) * 1994-03-18 1995-10-13 Hitachi Ltd プラズマ処理装置
US6573190B1 (en) * 1998-11-26 2003-06-03 Hitachi, Ltd. Dry etching device and dry etching method
CN101043784A (zh) * 2006-03-21 2007-09-26 显示器生产服务株式会社 混合等离子体反应器
CN101218859A (zh) * 2005-07-19 2008-07-09 显示器生产服务株式会社 具备复合天线线圈组的等离子体反应装置
CN102549725A (zh) * 2009-09-29 2012-07-04 株式会社爱发科 等离子蚀刻装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08263188A (ja) 1995-03-24 1996-10-11 Nec Corp キーボード制御方式
WO1997033300A1 (fr) * 1996-03-06 1997-09-12 Mattson Technology, Inc. Reacteur a plasma inductif a section generatrice de plasma de forme conique
US7871490B2 (en) * 2003-03-18 2011-01-18 Top Engineering Co., Ltd. Inductively coupled plasma generation system with a parallel antenna array having evenly distributed power input and ground nodes and improved field distribution
US7188807B2 (en) 2005-03-11 2007-03-13 The Boeing Company Refueling booms with multiple couplings and associated methods and systems
CN101543141B (zh) * 2006-11-28 2013-07-17 莎姆克株式会社 等离子处理装置
JP5781349B2 (ja) * 2011-03-30 2015-09-24 東京エレクトロン株式会社 プラズマ処理装置
US9196463B2 (en) 2011-04-07 2015-11-24 Varian Semiconductor Equipment Associates, Inc. System and method for plasma monitoring using microwaves

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263188A (ja) * 1994-03-18 1995-10-13 Hitachi Ltd プラズマ処理装置
US6573190B1 (en) * 1998-11-26 2003-06-03 Hitachi, Ltd. Dry etching device and dry etching method
CN101218859A (zh) * 2005-07-19 2008-07-09 显示器生产服务株式会社 具备复合天线线圈组的等离子体反应装置
CN101043784A (zh) * 2006-03-21 2007-09-26 显示器生产服务株式会社 混合等离子体反应器
CN102549725A (zh) * 2009-09-29 2012-07-04 株式会社爱发科 等离子蚀刻装置

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