WO2015109577A1 - Led and preparation method therefor - Google Patents

Led and preparation method therefor Download PDF

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Publication number
WO2015109577A1
WO2015109577A1 PCT/CN2014/071505 CN2014071505W WO2015109577A1 WO 2015109577 A1 WO2015109577 A1 WO 2015109577A1 CN 2014071505 W CN2014071505 W CN 2014071505W WO 2015109577 A1 WO2015109577 A1 WO 2015109577A1
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Prior art keywords
led
transparent encapsulant
horizontal structure
flip chip
transparent
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PCT/CN2014/071505
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French (fr)
Chinese (zh)
Inventor
裴小明
曹宇星
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上海瑞丰光电子有限公司
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Priority to PCT/CN2014/071505 priority Critical patent/WO2015109577A1/en
Publication of WO2015109577A1 publication Critical patent/WO2015109577A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape

Definitions

  • the invention belongs to the technical field of LEDs, and in particular relates to an LED and a preparation method thereof.
  • the LED product (no phosphor excitation, only the wafer emits a certain half-wavelength light) is packaged by fixing the LED on the support by means of die bonding or eutectic soldering, and connecting the positive electrode of the wafer with a gold wire.
  • the positive electrode of the holder, the negative electrode of the wafer is connected to the negative electrode of the holder, and the transparent cup is filled in the holder cup.
  • the transparent plastic it is necessary to work on a single bowl, which is inefficient.
  • a large amount of dispensing equipment is required, the utilization rate of the packaging glue is low, and material waste is serious.
  • the connection of the wafer and the support electrode by the gold wire has certain reliability hazards, which limits the application of the LED product to some extent.
  • the current LED products have the disadvantages of large preparation investment, low efficiency, and low reliability.
  • Embodiments of the present invention are achieved by an LED comprising a horizontal structure flip chip and a transparent encapsulant for covering the horizontal structure flip chip, and a transparent encapsulant located on each side of the horizontal structure flip chip
  • the thickness is uniform and consistent.
  • the horizontal structure flip chip is covered with a transparent adhesive, and the thickness of the transparent adhesive on each side of the horizontal structure flip chip is uniform and uniform, and the LED thus formed can be directly soldered to the application end without a conventional LED.
  • the bracket package has a simple application process and no thermal resistance and reliability at the package level, which greatly reduces the preparation cost of the LED product, improves the reliability of the LED, and has a simple structure.
  • FIG. 1 is a schematic structural view of a horizontal structure flip chip according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural view of an LED made of the horizontal structure flip chip shown in FIG. 1 (the upper surface is a flat surface);
  • FIG. 3 is a schematic structural view of an LED made of the horizontal structure flip chip shown in FIG. 1 (the upper surface is a roughened surface);
  • FIG. 4 is a schematic structural view of an LED made of the horizontal structure flip chip shown in FIG. 1 (the upper surface is a curved surface);
  • FIG. 5 is a flowchart of implementing an LED manufacturing method according to an embodiment of the present invention.
  • Figure 6 is a state diagram of the horizontal structure flip chip placed on the platform
  • Fig. 7 is a view showing a state in which a transparent encapsulant is coated on the stage shown in Fig. 3.
  • the horizontal structure flip chip is covered with a transparent adhesive, and the thickness of the transparent adhesive on each side of the horizontal structure flip chip is uniform and uniform, and the LED thus formed can be directly soldered to the application end without a conventional LED.
  • the bracket package has a simple application process and no thermal resistance and reliability at the package level, which greatly reduces the preparation cost of the LED product, improves the reliability of the LED, and has a simple structure.
  • an LED provided by an embodiment of the present invention includes a horizontal structure flip chip 1 and a transparent encapsulant 5 for covering the horizontal structure flip chip 1.
  • the flip chip 1 is disposed on the horizontal structure. (or called flip chip)
  • the transparent encapsulant on each side is uniform and uniform in thickness.
  • the horizontal structure flip chip can emit visible light of a desired color without exciting the phosphor, and the electrode is located on the bottom surface.
  • the LED thus formed can be directly soldered to the application end through the electrode of the wafer, without the need of a conventional LED bracket package, the application process is simple, the thermal resistance and reliability of the package layer are not greatly reduced, the manufacturing cost of the LED product is greatly reduced, and the LED is improved. Reliability and simple structure.
  • the side of the transparent encapsulant 5 is flat, and the angle between the transparent encapsulant 5 and the upper surface of the transparent encapsulant is greater than or equal to 90°, which will make the LED light uniform.
  • the top surface of the transparent encapsulant 5 is parallel to the plane of the bottom surface of the flip-chip 1 of the horizontal structure, as shown in FIGS. 2 to 4.
  • the top surface of the transparent encapsulant 5 may also be a roughened surface or a curved surface to enhance the light extraction rate, as shown in FIGS.
  • FIG. 5 shows an implementation flow of an LED preparation method according to an embodiment of the present invention, which is described in detail below.
  • step S101 a plurality of horizontal structure flip chips are positioned on the same platform, and a transparent encapsulant covering each horizontal structure flip chip is disposed on the platform.
  • a plurality of horizontal structure flip-chips 1 are first positioned on the same platform 4, and a transparent encapsulant 5 covering the horizontal structure flip-chips 1 is disposed on the platform 4, as shown in FIGS.
  • the lower surface of the horizontal structure flip chip 1 is provided with two electrodes, one of which is a positive electrode and the other of which is a negative electrode, both of which are in surface contact with the stage 4, as shown in FIG.
  • the plurality of horizontal structure flip-chips 1 on the same platform 4 are coated with the transparent encapsulant 5, the efficiency is high, the transparent encapsulant 5 coating device is small, and the transparent encapsulant 5 is highly utilized.
  • the horizontal structure flip chip 1 When the transparent encapsulant 5 is applied, the horizontal structure flip chip 1 is positioned by an adsorption device having a plurality of micropores 40, as shown in FIG. After the openings of all the micro holes 40 are covered by the horizontal structure flip chip 1, the cavity 41 of the adsorption device is evacuated, thereby positioning the horizontal structure flip chip 1 on the same platform 4, and then The platform 4 is simultaneously coated with a transparent encapsulant 5 on a plurality of horizontal structure flip-chips 1. The transparent encapsulation coating is carried out on a platform having the function of fixing the wafer by vacuum adsorption, and the process method is simple and easy to implement.
  • the adsorption device has a plurality of micropores 40, a cavity 41 communicating with each micropore 40, and a valve 42 for sealing the cavity 41.
  • the platform 4 is supported by the base 10, the cavity 41 is surrounded by the platform 4 and the base 10.
  • the valve 42 is disposed between the base 10 and the platform 4, and the micro-hole 40 is disposed on the platform 4, such that
  • the adsorption device has a simple structure and a relatively low cost.
  • the micropores have a diameter of 30 to 50 ⁇ m to enhance the adsorption of the horizontal structure flip chip.
  • step S102 after the upper surface molding operation of the transparent encapsulant is performed and cured, each LED is cut.
  • the upper surface of the transparent encapsulant 5 can be flattened by natural leveling, centrifugal rotation or mold forming.
  • each LED is cut out 6, as shown in Figure 7.
  • the transparent package film 7 (including the horizontal structure flip chip 1) is first removed from the platform 4, and the transparent package film 7 is divided by physical cutting to make each LED 6 are all covered by a transparent encapsulant of the same thickness.
  • the transparent package film 7 is first removed from the platform 4, and the transparent package film 7 is divided by physical cutting to make each LED 6 are all covered by a transparent encapsulant of the same thickness.
  • the side surface of the transparent encapsulant 5 is flattened, and the angle between the upper surface of the transparent encapsulant is greater than or equal to 90°, so that the intersecting surfaces are not collapsed, as shown in FIGS. 2 to 4.
  • the surface of the horizontal structure flip chip 1 is evenly coated with the transparent encapsulant 5 to realize the wafer level transparent encapsulant coating, which greatly reduces the material waste of the transparent encapsulation coating process in the conventional package, thereby reducing the production of the LED product. Preparation costs.
  • the embodiment of the present invention can also perform an upper surface molding operation on the transparent encapsulant 5 to finally make each LED
  • the top surface of 6 is formed into a curved surface for increasing the light extraction rate, as shown in FIG.

Abstract

An LED and a preparation method therefor. The LED comprises a flip chip (1) of a horizontal structure and transparent encapsulation glue (5) for coating the flip chip (1) of the horizontal structure. The transparent encapsulation glue (5) located on each side face of the flip chip (1) of the horizontal structure has well-distributed and uniform thickness. The LED has high reliability and simple structure.

Description

一种LED及其制备方法  LED and preparation method thereof 技术领域Technical field
本发明属于LED技术领域,尤其涉及一种LED及其制备方法。 The invention belongs to the technical field of LEDs, and in particular relates to an LED and a preparation method thereof.
背景技术Background technique
LED产品(无荧光粉激发,仅晶片发射一定半波宽的光线)的封装方式是将LED通过固晶胶粘接或共晶焊接的方式固定在支架上,采用金线将晶片的正极连接于支架的正极,晶片的负极连接于支架的负极,再在支架碗杯中填充透明封装胶。填充透明胶时需针对单个碗杯作业,效率低下。此外,还需大量的点胶设备投入,封装胶水利用率低下,物料浪费严重。而且,由金线连接晶片与支架电极,存在一定的可靠性隐患,一定程度上限制了LED产品的应用。综上,目前的LED产品存在制备投入大,效率低,可靠性低等缺点。 The LED product (no phosphor excitation, only the wafer emits a certain half-wavelength light) is packaged by fixing the LED on the support by means of die bonding or eutectic soldering, and connecting the positive electrode of the wafer with a gold wire. The positive electrode of the holder, the negative electrode of the wafer is connected to the negative electrode of the holder, and the transparent cup is filled in the holder cup. When filling the transparent plastic, it is necessary to work on a single bowl, which is inefficient. In addition, a large amount of dispensing equipment is required, the utilization rate of the packaging glue is low, and material waste is serious. Moreover, the connection of the wafer and the support electrode by the gold wire has certain reliability hazards, which limits the application of the LED product to some extent. In summary, the current LED products have the disadvantages of large preparation investment, low efficiency, and low reliability.
技术问题technical problem
本发明实施例的目的在于提供一种结构简单,可靠性高的LED。 It is an object of embodiments of the present invention to provide an LED having a simple structure and high reliability.
技术解决方案Technical solution
本发明实施例是这样实现的,一种LED,包括水平结构倒装晶片和用以围覆所述水平结构倒装晶片的透明封装胶,位于所述水平结构倒装晶片各侧面的透明封装胶厚度均匀、一致。Embodiments of the present invention are achieved by an LED comprising a horizontal structure flip chip and a transparent encapsulant for covering the horizontal structure flip chip, and a transparent encapsulant located on each side of the horizontal structure flip chip The thickness is uniform and consistent.
有益效果Beneficial effect
本发明实施例用透明胶围覆水平结构倒装晶片,并使位于所述水平结构倒装晶片各侧面的透明胶厚度均匀、一致,如此形成的LED可直接焊接于应用端,无需常规的LED支架封装,应用工艺简单,无封装层面的热阻和可靠性,极大地降低了LED产品的制备成本,提升LED的可靠性,且结构简单。In the embodiment of the invention, the horizontal structure flip chip is covered with a transparent adhesive, and the thickness of the transparent adhesive on each side of the horizontal structure flip chip is uniform and uniform, and the LED thus formed can be directly soldered to the application end without a conventional LED. The bracket package has a simple application process and no thermal resistance and reliability at the package level, which greatly reduces the preparation cost of the LED product, improves the reliability of the LED, and has a simple structure.
附图说明DRAWINGS
图1是本发明实施例提供的水平结构倒装晶片的结构示意图;1 is a schematic structural view of a horizontal structure flip chip according to an embodiment of the present invention;
  图2是由图1所示水平结构倒装晶片制成的LED的结构示意图(上表面为平面);2 is a schematic structural view of an LED made of the horizontal structure flip chip shown in FIG. 1 (the upper surface is a flat surface);
  图3是由图1所示水平结构倒装晶片制成的LED的结构示意图(上表面为粗化表面);3 is a schematic structural view of an LED made of the horizontal structure flip chip shown in FIG. 1 (the upper surface is a roughened surface);
  图4是由图1所示水平结构倒装晶片制成的LED的结构示意图(上表面为弧面);4 is a schematic structural view of an LED made of the horizontal structure flip chip shown in FIG. 1 (the upper surface is a curved surface);
图5是本发明实施例提供的LED制备方法的实现流程图;FIG. 5 is a flowchart of implementing an LED manufacturing method according to an embodiment of the present invention; FIG.
图6是将水平结构倒装晶片置于平台后的状态图;Figure 6 is a state diagram of the horizontal structure flip chip placed on the platform;
图7是于图3所示平台涂覆透明封装胶的状态图。Fig. 7 is a view showing a state in which a transparent encapsulant is coated on the stage shown in Fig. 3.
本发明的实施方式Embodiments of the invention
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It is understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
  本发明实施例用透明胶围覆水平结构倒装晶片,并使位于所述水平结构倒装晶片各侧面的透明胶厚度均匀、一致,如此形成的LED可直接焊接于应用端,无需常规的LED支架封装,应用工艺简单,无封装层面的热阻和可靠性,极大地降低了LED产品的制备成本,提升LED的可靠性,且结构简单。In the embodiment of the invention, the horizontal structure flip chip is covered with a transparent adhesive, and the thickness of the transparent adhesive on each side of the horizontal structure flip chip is uniform and uniform, and the LED thus formed can be directly soldered to the application end without a conventional LED. The bracket package has a simple application process and no thermal resistance and reliability at the package level, which greatly reduces the preparation cost of the LED product, improves the reliability of the LED, and has a simple structure.
  以下结合具体实施例对本发明的实现进行详细描述。The implementation of the present invention will be described in detail below with reference to specific embodiments.
  如图1~4所示,本发明实施例提供的LED包括水平结构倒装晶片1和用以围覆所述水平结构倒装晶片1的透明封装胶5,位于所述水平结构倒装晶片1(或称覆晶晶片)各侧面的透明封装胶厚度均匀、一致。应当说明的是,所述水平结构倒装晶片无需激发荧光粉,即可发出所需颜色可见光,其电极位于底面。如此形成的LED可直接经其晶片的电极焊接于应用端,无需常规的LED支架封装,应用工艺简单,无封装层面的热阻和可靠性,极大地降低了LED产品的制备成本,提升LED的可靠性,且结构简单。As shown in FIG. 1 to FIG. 4, an LED provided by an embodiment of the present invention includes a horizontal structure flip chip 1 and a transparent encapsulant 5 for covering the horizontal structure flip chip 1. The flip chip 1 is disposed on the horizontal structure. (or called flip chip) The transparent encapsulant on each side is uniform and uniform in thickness. It should be noted that the horizontal structure flip chip can emit visible light of a desired color without exciting the phosphor, and the electrode is located on the bottom surface. The LED thus formed can be directly soldered to the application end through the electrode of the wafer, without the need of a conventional LED bracket package, the application process is simple, the thermal resistance and reliability of the package layer are not greatly reduced, the manufacturing cost of the LED product is greatly reduced, and the LED is improved. Reliability and simple structure.
  通常,所述透明封装胶5的侧面平整,与所述透明封装胶的上表面间的夹角大于等于90°,这将使LED出光均匀。其中,所述透明封装胶5的顶面为平行于水平结构倒装晶片1底面的平面,如图2~4所示。此外,所述透明封装胶5的顶面还可为粗化表面或弧面,以提升光取出率,如图3、4所示。Generally, the side of the transparent encapsulant 5 is flat, and the angle between the transparent encapsulant 5 and the upper surface of the transparent encapsulant is greater than or equal to 90°, which will make the LED light uniform. The top surface of the transparent encapsulant 5 is parallel to the plane of the bottom surface of the flip-chip 1 of the horizontal structure, as shown in FIGS. 2 to 4. In addition, the top surface of the transparent encapsulant 5 may also be a roughened surface or a curved surface to enhance the light extraction rate, as shown in FIGS.
  图5示出了本发明实施例提供的LED制备方法的实现流程,详述如下。FIG. 5 shows an implementation flow of an LED preparation method according to an embodiment of the present invention, which is described in detail below.
  在步骤S101中,将多个水平结构倒装晶片定位于同一平台,在该平台上布设覆盖各水平结构倒装晶片的透明封装胶。In step S101, a plurality of horizontal structure flip chips are positioned on the same platform, and a transparent encapsulant covering each horizontal structure flip chip is disposed on the platform.
  本发明实施例先将多个水平结构倒装晶片1定位于同一平台4,在该平台4上布设覆盖各水平结构倒装晶片1的透明封装胶5,如图6、7所示。应当说明的是,所述水平结构倒装晶片1的下表面设两个电极,其中一个为正电极,另一个为负电极,该两个电极均与平台4面接触,如图6所示。在此对处于同一平台4的多个水平结构倒装晶片1进行透明封装胶5涂覆,效率高,透明封装胶5涂覆设备投入小,而且透明封装胶5利用率高。In the embodiment of the present invention, a plurality of horizontal structure flip-chips 1 are first positioned on the same platform 4, and a transparent encapsulant 5 covering the horizontal structure flip-chips 1 is disposed on the platform 4, as shown in FIGS. It should be noted that the lower surface of the horizontal structure flip chip 1 is provided with two electrodes, one of which is a positive electrode and the other of which is a negative electrode, both of which are in surface contact with the stage 4, as shown in FIG. Here, the plurality of horizontal structure flip-chips 1 on the same platform 4 are coated with the transparent encapsulant 5, the efficiency is high, the transparent encapsulant 5 coating device is small, and the transparent encapsulant 5 is highly utilized.
  涂覆透明封装胶5时,由具有多个微孔40的吸附装置对水平结构倒装晶片1进行定位,如图6所示。此处用水平结构倒装晶片1将所有微孔40的开口封盖住后,对所述吸附装置的腔体41抽真空,从而将各水平结构倒装晶片1定位于同一平台4,接着在该平台4上对多个水平结构倒装晶片1同时涂覆透明封装胶5。在具有由真空吸附固定晶片功能的平台进行透明封装胶涂覆,工艺方法简单,易于实现。具体地,所述吸附装置具有多个微孔40、与各微孔40相连通的腔体41以及用以密封所述腔体41的阀门42。在此由底座10支撑所述平台4,所述腔体41由平台4和底座10围成,所述阀门42设于底座10与平台4之间,所述微孔40设于平台4,这样的吸附装置结构简单,成本相对低廉。作为优选,所述微孔的直径为30~50μm,以提升对水平结构倒装晶片的吸附力。When the transparent encapsulant 5 is applied, the horizontal structure flip chip 1 is positioned by an adsorption device having a plurality of micropores 40, as shown in FIG. After the openings of all the micro holes 40 are covered by the horizontal structure flip chip 1, the cavity 41 of the adsorption device is evacuated, thereby positioning the horizontal structure flip chip 1 on the same platform 4, and then The platform 4 is simultaneously coated with a transparent encapsulant 5 on a plurality of horizontal structure flip-chips 1. The transparent encapsulation coating is carried out on a platform having the function of fixing the wafer by vacuum adsorption, and the process method is simple and easy to implement. Specifically, the adsorption device has a plurality of micropores 40, a cavity 41 communicating with each micropore 40, and a valve 42 for sealing the cavity 41. The platform 4 is supported by the base 10, the cavity 41 is surrounded by the platform 4 and the base 10. The valve 42 is disposed between the base 10 and the platform 4, and the micro-hole 40 is disposed on the platform 4, such that The adsorption device has a simple structure and a relatively low cost. Preferably, the micropores have a diameter of 30 to 50 μm to enhance the adsorption of the horizontal structure flip chip.
  在步骤S102中,对所述透明封装胶上表面成型操作、使之固化后,切割出各LED。In step S102, after the upper surface molding operation of the transparent encapsulant is performed and cured, each LED is cut.
  本发明实施例可通过自然流平、离心旋转或模具成型的方式使所述透明封装胶5的上表面平整。待所述透明封装胶5固化后,切割出各LED 6,如图7所示。具体地,先将透明封装胶片7(内含水平结构倒装晶片1)从平台4移出,采用物理切断的方式分割透明封装胶片7,使各LED 6均由同样厚度的透明封装胶所围覆。为提升各LED 6光子取出率,增强LED产品亮度,切割前对所述透明封装胶片7上表面粗化处理。激光切割时,使所述透明封装胶5的侧面平整,与所述透明封装胶的上表面间的夹角大于等于90°,这样相交的两个面无坍塌,如图2~4所示。这样水平结构倒装晶片1表面均匀地涂覆了透明封装胶5,从而实现晶片级透明封装胶涂覆,大大降低常规封装中透明封装胶涂覆工序的物料浪费,进而降低了LED产品的生产制备成本。In the embodiment of the invention, the upper surface of the transparent encapsulant 5 can be flattened by natural leveling, centrifugal rotation or mold forming. After the transparent encapsulant 5 is cured, each LED is cut out 6, as shown in Figure 7. Specifically, the transparent package film 7 (including the horizontal structure flip chip 1) is first removed from the platform 4, and the transparent package film 7 is divided by physical cutting to make each LED 6 are all covered by a transparent encapsulant of the same thickness. To enhance each LED 6 photon take-out rate, enhance the brightness of the LED product, and roughen the upper surface of the transparent package film 7 before cutting. During laser cutting, the side surface of the transparent encapsulant 5 is flattened, and the angle between the upper surface of the transparent encapsulant is greater than or equal to 90°, so that the intersecting surfaces are not collapsed, as shown in FIGS. 2 to 4. The surface of the horizontal structure flip chip 1 is evenly coated with the transparent encapsulant 5 to realize the wafer level transparent encapsulant coating, which greatly reduces the material waste of the transparent encapsulation coating process in the conventional package, thereby reducing the production of the LED product. Preparation costs.
  此外,本发明实施例还可对所述透明封装胶5上表面成型操作,最终使各LED 6的顶面成型为用以提升光取出率的弧面,如图5所示。In addition, the embodiment of the present invention can also perform an upper surface molding operation on the transparent encapsulant 5 to finally make each LED The top surface of 6 is formed into a curved surface for increasing the light extraction rate, as shown in FIG.
  以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。The above is only the preferred embodiment of the present invention, and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection of the present invention. Within the scope.

Claims (8)

  1. 一种LED,其特征在于,所述LED包括水平结构倒装晶片和用以围覆所述水平结构倒装晶片的透明封装胶,位于所述水平结构倒装晶片各侧面的透明封装胶厚度均匀、一致。 An LED, comprising: a horizontal structure flip chip and a transparent encapsulant for covering the horizontal structure flip chip; the transparent encapsulant on each side of the horizontal structure flip chip has a uniform thickness Consistent.
  2. 如权利要求1所述的LED,其特征在于,所述透明封装胶的侧面平整,与所述透明封装胶的上表面间的夹角大于等于90°。The LED according to claim 1, wherein the transparent encapsulant has a flat side and an angle of 90° or more with an upper surface of the transparent encapsulant.
  3. 如权利要求2所述的LED,其特征在于,所述透明封装胶的顶面为平行于水平结构倒装晶片底面的平面。The LED of claim 2 wherein the top surface of the transparent encapsulant is a plane parallel to the bottom surface of the horizontal structure flip chip.
  4. 如权利要求3所述的LED,其特征在于,所述透明封装胶的顶面为粗化表面。The LED of claim 3 wherein the top surface of the transparent encapsulant is a roughened surface.
  5. 如权利要求2所述的LED,其特征在于,所述透明封装胶的顶面为用以提升光取出率的弧面。The LED according to claim 2, wherein the top surface of the transparent encapsulant is a curved surface for increasing the light extraction rate.
  6. 一种LED制备方法,其特征在于,所述方法包括以下步骤:An LED preparation method, characterized in that the method comprises the following steps:
      将多个水平结构倒装晶片定位于同一平台,在该平台上布设覆盖各水平结构倒装晶片的透明封装胶;Positioning a plurality of horizontal structure flip-chips on the same platform, and disposing a transparent encapsulant covering the horizontal structure flip chip on the platform;
      对所述透明封装胶上表面成型操作、使之固化后,切割出各LED。After the surface of the transparent encapsulant is molded and cured, each LED is cut.
  7. 如权利要求6所述的方法,其特征在于,切割前对所述透明封装胶上表面粗化处理。The method according to claim 6, wherein the upper surface of the transparent encapsulant is roughened before cutting.
  8. 如权利要求6所述的方法,其特征在于,切割时使所述透明封装胶的侧面平整,与所述透明封装胶的上表面间的夹角大于等于90°。The method according to claim 6, wherein the side of the transparent encapsulant is flattened when cutting, and the angle between the upper surface of the transparent encapsulant is greater than or equal to 90°.
PCT/CN2014/071505 2014-01-26 2014-01-26 Led and preparation method therefor WO2015109577A1 (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1909216A (en) * 2005-08-01 2007-02-07 恩益禧电子股份有限公司 Semiconductor package featuring metal lid member
CN102544260A (en) * 2011-12-31 2012-07-04 深圳市瑞丰光电子股份有限公司 Method for coating fluorescent glue on surface of LED (light-emitting diode) flip chip
CN202474022U (en) * 2011-12-31 2012-10-03 深圳市瑞丰光电子股份有限公司 LED support, LED, and LED lighting device
KR20130041873A (en) * 2013-03-29 2013-04-25 서울반도체 주식회사 Light emitting device having flexibility
CN103187510A (en) * 2012-01-02 2013-07-03 隆达电子股份有限公司 Solid-state light-emitting element and solid-state light-emitting package thereof
CN103236490A (en) * 2013-04-03 2013-08-07 大连德豪光电科技有限公司 LED flip-chip packaged device, manufacture method of LED flip-chip packaged device, and package structure using LED flip-chip packaged device
CN103855281A (en) * 2014-01-26 2014-06-11 上海瑞丰光电子有限公司 LED and manufacturing method thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1909216A (en) * 2005-08-01 2007-02-07 恩益禧电子股份有限公司 Semiconductor package featuring metal lid member
CN102544260A (en) * 2011-12-31 2012-07-04 深圳市瑞丰光电子股份有限公司 Method for coating fluorescent glue on surface of LED (light-emitting diode) flip chip
CN202474022U (en) * 2011-12-31 2012-10-03 深圳市瑞丰光电子股份有限公司 LED support, LED, and LED lighting device
CN103187510A (en) * 2012-01-02 2013-07-03 隆达电子股份有限公司 Solid-state light-emitting element and solid-state light-emitting package thereof
KR20130041873A (en) * 2013-03-29 2013-04-25 서울반도체 주식회사 Light emitting device having flexibility
CN103236490A (en) * 2013-04-03 2013-08-07 大连德豪光电科技有限公司 LED flip-chip packaged device, manufacture method of LED flip-chip packaged device, and package structure using LED flip-chip packaged device
CN103855281A (en) * 2014-01-26 2014-06-11 上海瑞丰光电子有限公司 LED and manufacturing method thereof

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