WO2015108197A1 - Dispositif émettant de la lumière de type à résonateur extérieur - Google Patents

Dispositif émettant de la lumière de type à résonateur extérieur Download PDF

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WO2015108197A1
WO2015108197A1 PCT/JP2015/051358 JP2015051358W WO2015108197A1 WO 2015108197 A1 WO2015108197 A1 WO 2015108197A1 JP 2015051358 W JP2015051358 W JP 2015051358W WO 2015108197 A1 WO2015108197 A1 WO 2015108197A1
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emitting device
light emitting
external resonator
resonator type
wavelength
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PCT/JP2015/051358
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English (en)
Japanese (ja)
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近藤　順悟
哲也 江尻
浅井　圭一郎
直剛 岡田
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日本碍子株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1221—Detuning between Bragg wavelength and gain maximum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/163—Single longitudinal mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity

Definitions

  • the present invention relates to an external resonator type light emitting device using a grating element.
  • a semiconductor laser of the Fabry-Perot (FP) type in which an optical resonator is formed by sandwiching an active layer between mirrors formed on both end faces is employed.
  • FP Fabry-Perot
  • the longitudinal mode tends to be multimode.
  • the oscillation wavelength changes, and the light intensity changes accordingly.
  • DFB distributed feedback
  • DBR distributed reflection
  • a DBR laser a laser having a resonator having a configuration in which an irregularity is formed on the waveguide surface on the extension of the waveguide of the active layer and a mirror by Bragg reflection is provided, and as one aspect thereof, a grating is used.
  • the thing of the structure formed monolithically in the semiconductor is widely known (for example, refer patent document 1 and patent document 2).
  • the gratings are provided at both ends of the optical waveguide layer, the light emitted from the active layer propagates through the optical waveguide layer, a part of which is reflected by the grating and returns to the current injection unit. Amplified.
  • the wavelength of the laser light is constant. That is, the wavelength stable operation is realized by feeding back a part of the laser light to the semiconductor laser by a wavelength selective mirror using Bragg reflection.
  • an external resonator type semiconductor laser in which a grating is provided as a grating element that is a component different from a semiconductor to form a resonator externally.
  • This type of semiconductor laser is characterized by good wavelength stability, temperature stability, and controllability.
  • the external resonator include a fiber Bragg grating (FBG) and a volume hologram grating (VHG) (see Non-Patent Document 1 and Non-Patent Document 2).
  • These semiconductor lasers have a merit that the grating and the resonator length can be individually designed because the grating is composed of a member different from the semiconductor, and since it is not affected by temperature rise due to heat generation due to current injection, There is an effect that the wavelength stability can be further improved.
  • the temperature change of the refractive index is different from that of a semiconductor, the effect of improving the temperature stability can be obtained by designing with the resonator length.
  • an external resonator type laser in which a grating is formed in a waveguide made of quartz glass is known (for example, see Patent Document 3).
  • the external resonator type laser disclosed in Patent Document 3 is a frequency-stabilized laser (temperature-independent laser) that can be used without using a temperature controller even in an environment where the room temperature changes greatly (for example, 30 ° C. or more). .
  • Non-Patent Document 3 a method for stabilizing power by a combination of a semiconductor laser and a grating element is already known (for example, see Non-Patent Document 3).
  • Non-Patent Document 4 and Non-Patent Document 5 also suggest that when the semiconductor laser is driven at a constant current, the optical output varies when the environmental temperature varies.
  • Non-Patent Document 1 mentions a mode hop mechanism that occurs in a semiconductor laser and impairs wavelength stability as temperature rises, and measures for improving it.
  • Lasers that can keep the oscillation wavelength constant without precise temperature control are already known (see, for example, Patent Document 4).
  • Patent Document 4 it is assumed that the temperature change rate of the reflection wavelength of the diffraction grating (temperature coefficient of the Bragg reflection wavelength) is reduced.
  • Patent Document 4 further describes that in such an external resonator laser, power stability can be realized by setting the laser oscillation to a longitudinal mode multimode.
  • Patent Document 5 discloses that when the reflectance at the light exit surface of the semiconductor laser that is the light source in the external cavity laser having such an aspect is the effective reflectance Re (substantially 0.1 to 38.4%), It is described that power stability can be realized by setting the oscillation to a longitudinal mode multimode.
  • the oscillation wavelength changes due to the change of the gain and resonator conditions, and a phenomenon called optical kink, called kink, occurs.
  • the oscillation wavelength usually changes with a temperature coefficient of 0.3 nm / ° C.
  • mode hop in which the oscillation mode (longitudinal mode) in the resonator shifts from one mode to another mode due to a temperature rise during use can occur.
  • the oscillation mode longitudinal mode
  • the output fluctuates by 5% or more.
  • the temperature of the semiconductor laser is controlled using a Peltier element.
  • the use of the Peltier element is a factor of high cost because the number of parts increases and the size of the module increases.
  • the present invention has been made in view of the above problems, and realizes an external resonator type light emitting device in which high wavelength stability is ensured and light output fluctuation is suppressed without performing temperature control by a Peltier element.
  • the purpose is to do.
  • an external resonator type light emitting device includes a semiconductor laser light source having an active layer that emits laser light, and an optical axis of the laser light emitted from the active layer.
  • the center wavelength of the reflectivity profile of Bragg gratings and lambda G, and ⁇ G the full width at half maximum of the reflectivity profile
  • the wavelength range of the emitted light was ⁇ G - ⁇ G / 2 or ⁇ G + ⁇ G / 2 or less, as.
  • the grating element is provided on a support substrate and the support substrate.
  • An optical material layer having a thickness of 0 ⁇ m or less, and a bonding layer for bonding the support substrate and the optical material layer, wherein the ridge-type optical waveguide is provided in the optical material layer, and the semiconductor 10 ⁇ m ⁇ L b ⁇ 300 ⁇ m and 10 nm ⁇ t d ⁇ 250 nm, where L b is the length of the Bragg grating in the optical axis direction of the laser light and t d is the depth of the unevenness constituting the Bragg grating. I was there.
  • the material of the optical material layer is gallium arsenide, lithium niobate, tantalum oxide, lithium tantalate, zinc oxide, and alumina oxide. Selected from the group consisting of:
  • the grating element has a configuration including the ridge type optical waveguide on a support substrate,
  • the ridge type optical waveguide has a cross section perpendicular to the longitudinal direction having a convex shape and a thickness of 0.5 ⁇ m or more and 3.0 ⁇ m or less, and the length of the Bragg grating in the optical axis direction of the semiconductor laser light.
  • the thickness is L b and the depth of the unevenness constituting the Bragg grating is t d , 10 ⁇ m ⁇ L b ⁇ 300 ⁇ m and 10 nm ⁇ t d ⁇ 250 nm.
  • the material of the ridge type optical waveguide is gallium arsenide, lithium niobate, tantalum oxide, lithium tantalate, zinc oxide, and oxide. It was selected from the group consisting of alumina.
  • the external resonator type light emitting device according to any one of the first to sixth aspects, wherein the length of the grating element in the optical axis direction of the semiconductor laser light is LWG .
  • L WG ⁇ 500 ⁇ m.
  • a wavelength value that is a wavelength of the emitted light is 2 or more and 5 or less in the wavelength range. And so on.
  • the temperature coefficient of the Bragg wavelength is d ⁇ G / dT
  • the temperature coefficient of the wavelength of the emitted light is When d ⁇ TM / dT, It was made to be.
  • the external resonator light-emitting device 1 in which the wavelength fluctuation and the output fluctuation are suppressed is realized even if the environmental temperature changes within the assumed operating temperature range.
  • FIG. 3 is a ZX sectional view of the external resonator type light emitting device 1.
  • FIG. 3 is a schematic perspective view of a grating element 9.
  • FIG. 4 is a YZ sectional view of the grating element 9. It is ZX sectional drawing of the external resonator type light-emitting device 1A. It is YZ sectional drawing of the grating element 9A.
  • 6 is a diagram showing a relationship between a gain curve of primary light emission in an active layer 5 and a reflectance profile of the grating element 9.
  • FIG. 3 is a YZ sectional view of the grating element 109.
  • FIG. 1 is a side sectional view schematically showing a configuration of an external resonator type light emitting device 1 according to a first embodiment of the present invention.
  • the external resonator type light emitting device 1 mainly includes a light source element 2 that emits semiconductor laser light A by current injection and a grating element 9.
  • the light source element 2 and the grating element 9 are provided to realize a resonator structure.
  • the light source element 2 and the grating element 9 are mounted on one main surface of the flat common substrate 3.
  • the common substrate 3 may be integrated, but a plurality of separate substrates may be joined.
  • FIG. 1 is a ZX sectional view of the external resonator type light emitting device 1.
  • the light source element 2 and the grating element 9 are mounted on the common substrate 3 in such a manner that a gap 14 is provided in the optical axis direction.
  • Each end face of the light source element 2 and the grating element 9 may be cut obliquely in order to suppress end face reflection.
  • the light source element 2 includes an active layer 5, a reflection film 6 provided on the outer surface of the active layer 5 (on the opposite side to the grating element 9), and a reflection provided on the end surface of the active layer 5 on the grating element 9 side.
  • the light source element 2 oscillates alone (even without the grating element 9).
  • the light source element 2 it is preferable to use an element that oscillates in a single mode in the longitudinal mode.
  • the reflection characteristic depends on the wavelength as described later. Therefore, even if the longitudinal mode of the light source element 2 oscillates in multimode, the external resonator type light emitting device 1 can oscillate in single mode by controlling the wavelength characteristics. Is possible.
  • the active layer 5 is provided on one main surface of the substrate 4, the reflective film is formed up to the side surface of the substrate 4, and the other main surface of the substrate 4 is a mounting surface for the common substrate 3.
  • this is not an essential aspect, and an aspect in which the active layer 5 is provided directly on the common substrate 3 may be used.
  • the active layer 5 it is preferable to use a GaAs-based semiconductor or an InP-based semiconductor. Specific materials and wavelengths can be selected as appropriate. For example, if a green laser that is the second harmonic is oscillated using a nonlinear optical element, a GaAs-based semiconductor that oscillates near a wavelength of 1064 nm is used for the active layer 5.
  • the oscillation wavelength of the semiconductor laser light A may be 1100 nm or less, but is particularly preferably 990 nm or less.
  • the wavelength of the semiconductor laser light A is shortened, the refractive index change of the semiconductor tends to be too large.
  • the laser oscillation wavelength is particularly preferably 780 nm or more.
  • the material of the reflection film 6 include a metal film such as gold.
  • the reflective film 20 is preferably formed as a laminated film of oxides such as silicon dioxide, tantalum pentoxide, magnesium fluoride, and calcium fluoride.
  • FIG. 2 is a schematic perspective view of the grating element 9.
  • FIG. 3 is a YZ sectional view of the grating element 9.
  • the grating element 9 generally has a configuration in which an optical material layer 11 is bonded to one main surface of a flat support substrate 10 by an adhesive layer 15.
  • the other main surface of the support substrate 10 is a mounting surface of the grating element 9 with respect to the common substrate 3.
  • the material of the support substrate 10 is not particularly limited, and examples thereof include glass such as lithium niobate, lithium tantalate, and quartz glass, crystal, Si, alumina, aluminum nitride, and silicon carbide.
  • the optical material layer 11 has an incident surface 11a on which the semiconductor laser light A is incident and an output surface 11b that emits the output light B having a desired wavelength.
  • the thickness Ts of the optical material layer 11 is preferably not less than 0.5 ⁇ m and not more than 3 ⁇ m.
  • a pair of ridge grooves 19 which are linear grooves provided in parallel along the X-axis direction are provided, and a portion between the ridge grooves 19 is formed.
  • An optical waveguide (ridge type optical waveguide) 18 is formed.
  • the optical waveguide 18 is provided with the Bragg grating 12.
  • the depth Tr of the ridge groove 19 is preferably 0.25 ⁇ m or more and 0.85 ⁇ m or less, and the width (size in the Y-axis direction) W m of the optical waveguide 18 is preferably 1.5 ⁇ m or more and 8 ⁇ m or less. . It is assumed that the width W m of the optical waveguide 18 is the width of the narrowest portion in the cross section of the optical waveguide 18 (a plane perpendicular to the optical axis direction of the semiconductor laser light A).
  • the ridge groove 19 can be formed by physical processing such as dry etching using reactive ion etching, wet etching using hydrofluoric acid, cutting using an outer peripheral blade, laser ablation processing, or the like.
  • the Bragg grating 12 is a periodic concavo-convex portion provided with a constant pitch ⁇ and a depth t d along the optical axis direction, as shown by a partially enlarged view E in FIG.
  • the lengths of the convex part and the concave part in the optical axis direction are equal to ⁇ / 2.
  • the Bragg grating 12 is shown along the ZX plane, but this is merely for convenience of explanation, and the Bragg grating 12 is actually formed along the XY plane.
  • the pitch ⁇ is appropriately determined according to the wavelength of light desired to be emitted from the external resonator type light emitting device 1.
  • the depth t d is suitably are 10nm or 250nm or less.
  • the Bragg grating 12 reflects light based on a reflectance profile determined according to the pitch ⁇ under Bragg conditions.
  • the wavelength ⁇ G of the main peak of the reflectance profile is a function of temperature that varies with the temperature coefficient d ⁇ G / dT.
  • the reflectivity (grating reflectivity) in the Bragg grating 12, particularly the reflectivity at the wavelength ⁇ G of the main peak, is determined by the material for forming the optical material layer 11 (particularly its refractive index n b ), the pitch ⁇ of the Bragg grating 12, It is a value determined according to the value of the length L b and the depth t d .
  • a grating reflectivity of 40% or less than 5% is achieved, which has a length L b of the Bragg grating 12 10 [mu] m or more It is realized by doing.
  • the grating reflectance is preferably larger than the reflectance of the reflective film 6. If the grating reflectance is 5% or more, the output power is stable, but from the viewpoint of obtaining a large output power, the grating reflectance is more preferably 25% or less.
  • the Bragg grating 12 may be provided on the lower surface 11 c side of the optical material layer 11. From the viewpoint of reducing variations in the shapes of the Bragg grating 12 and the ridge groove 19, it is preferable to form the Bragg grating 12 on the lower surface 11c so that the formation surfaces of the Bragg grating 12 and the ridge groove 19 are different.
  • the Bragg grating 12 can be formed by physical or chemical etching. For example, a metal film such as Ni or Ti is formed on the upper surface of the optical material layer 11, and an etching mask is formed by periodically providing windows by photolithography. Then, the Bragg grating 12 is formed by etching the unmasked portion with a dry etching apparatus such as reactive ion etching and finally removing the metal mask.
  • a dry etching apparatus such as reactive ion etching
  • the Bragg grating 12 is provided separately from both the incident surface 11a and the exit surface 11b of the optical material layer 11. In particular, between the incident surface 11a and the Bragg grating 12, there is a propagation portion 13 in which no grating exists.
  • the propagation part 13 is arranged to face the active layer 5 with a gap 14 interposed therebetween. However, from the viewpoint of shortening the length of the external resonator, the propagation unit 13 may be omitted.
  • a lower buffer layer 16 and an upper buffer layer 17 are provided on the upper and lower surfaces of the optical material layer 11 as shown in FIG. Therefore, more strictly, the optical material layer 11 is provided on the support substrate 10 via the lower buffer layer 16.
  • the lower buffer layer 16 and the upper buffer layer 17 may be omitted.
  • the air layer is in direct contact with the Bragg grating 12, and therefore, the refractive index difference from where the Bragg grating 12 is not provided is greater than when the upper buffer layer 17 is provided. from while shortening the length L b of the Bragg grating 12, it is possible to increase the reflectivity.
  • the lower buffer layer 16 and the upper buffer layer 17 are preferably made of, for example, silicon oxide.
  • the lower buffer layer 16 and the upper buffer layer 17 can be formed on the substrate to be the optical material layer 11 by a known thin film forming method such as sputtering, vacuum deposition, or CVD.
  • the optical material layer 11 is preferably configured using a substance having a refractive index nb of 1.8 or more and a thermal conductivity of 50 W / m ⁇ K or less.
  • the optical material layer 11 By configuring the optical material layer 11 with a material having a refractive index nb of 1.8 or more, a high grating reflectance can be obtained while making the structure of the grating element 9 compact.
  • the refractive index n b is more preferably 1.9 or more.
  • the pitch ⁇ is too small Bragg grating since the formation of 12 is difficult, practically, although the refractive index n b is sufficient 4 or less, more preferably 3.6 or less.
  • the equivalent refractive index of the region including the lower buffer layer 16 and the upper buffer layer 17 in the optical waveguide 18 is preferably 3.3 or less for the same reason.
  • the support substrate 10 and the optical material layer 11 forming the grating element 9 are made of the above-described ceramics or glass material, a heat storage effect is obtained because the heat conduction is small. Thereby, the heat radiation of the semiconductor laser is suppressed, and the semiconductor laser is kept at a high temperature. Such a heat storage effect contributes to suppression of fluctuations in emission wavelength caused by changes in environmental temperature.
  • the support substrate 10 and the optical material layer 11 are preferably formed of a material having a thermal conductivity of 25 W / m ⁇ K or less, and formed of a material of 10 W / m ⁇ K or less. Is most preferred.
  • Mg magnesium
  • Zn zinc
  • Sc scandium
  • In indium
  • Mg magnesium
  • Zn zinc
  • Sc scandium
  • In indium
  • Mg magnesium
  • Zn zinc
  • Sc scandium
  • In indium
  • the aspect which contains rare earth elements as a dope component may be sufficient.
  • the rare earth element Nd, Er, Tm, Ho, Dy, and Pr are particularly preferable.
  • the adhesive layer 15 may be an aspect formed with an inorganic adhesive, an aspect formed with an organic adhesive, or an aspect formed with a combination of an inorganic adhesive and an organic adhesive. Also good.
  • the support substrate 10 and the optical material layer 11 may be bonded together by direct bonding without forming the adhesive layer 15. In this case, a room temperature direct bonding method, a surface activation method, or an atomic diffusion bonding method can be employed.
  • a mode in which a thin film layer to be the optical material layer 11 is formed on the support substrate 10 by a known thin film generation method such as sputtering, vacuum deposition, or CVD may be used.
  • an antireflective film 7B is provided on the end surface on the incident surface 11a side of the optical material layer 11, and an antireflective film 7C is provided on the end surface on the output surface 11b side.
  • the antireflective films 7B and 7C are preferably formed as a laminated film of an oxide such as silicon dioxide, tantalum pentoxide, magnesium fluoride, calcium fluoride, or a metal film.
  • both the non-reflective films 7B and 7C may be provided as a layer having a smaller reflectance than the reflectance (grating reflectance) in the Bragg grating 12. Specifically, it is more preferably 0.1% or less.
  • the principle of laser oscillation of the external resonator type light emitting device 1 having the above configuration will be outlined below.
  • spontaneous emission light primary light emission
  • the Bragg grating 12 reflects only light of a predetermined wavelength component that satisfies the Bragg condition among the primary light emission. 2 (reflected light C in FIG. 2), in the section from the reflective film 6 to the Bragg grating 12, oscillation (laser light) of light having a wavelength (oscillation wavelength) satisfying a predetermined phase condition occurs.
  • the external resonator type light emitting device 1 can emit laser light having wavelength stability ensured in such a manner.
  • a Fabry-Perot resonator can also be configured in the section between the reflective film 6 and the reflective film 20, but when the reflectance of the reflective film 20 is smaller than the reflectance of the grating, the distance from the reflective film 6 to the Bragg grating 12 is reached.
  • the gain threshold can be made smaller in the resonator formed between the two. For this reason, the oscillation mode of the Bragg grating 12 becomes dominant.
  • FIG. 4 is a ZX cross-sectional view of the external resonator type light emitting device 1A in which an antireflective film 7A is provided instead of the reflective film 20.
  • the nonreflective film 7A may be provided in the same manner as the nonreflective films 7B and 7C.
  • the configurations of the external resonator type light emitting device 1 and the external resonator type light emitting device 1A are the same except that the reflective film 20 and the nonreflective film 7A are different. Therefore, in the following description, unless otherwise specified, the external resonator type light emitting device 1 and the external resonator type light emitting device 1A will be described without any particular distinction.
  • FIG. 5 is a YZ sectional view of a grating element 9A, which is a modification of the grating element 9 shown in FIG.
  • the grating element 9A has the same layer structure as the grating element 9, but the formation positions of the ridge groove 19 and the optical waveguide 18 are different. Specifically, a ridge groove 19 and an optical waveguide 18 are formed on the support substrate 10 side of the optical material layer 11 inside the element. Accordingly, the adhesive layer 15 has a convex portion corresponding to the portion of the ridge groove 19. Further, the upper surface 11e of the optical material layer 11 is a flat surface.
  • the Bragg grating 12 may be formed on the upper surface 11e side which is a flat surface, or may be formed on the lower surface 11f side where the ridge groove 19 is provided.
  • the Bragg grating 12 is formed on the upper surface 11e so that the formation surfaces of the Bragg grating 12 and the ridge groove 19 are different.
  • the upper buffer layer 17 may not be provided in the grating element 9A.
  • the difference in configuration between the grating element 9 and the grating element 9A is not directly related to the feature of the invention according to the present embodiment to be described later. Therefore, in the following description, unless otherwise specified, The grating element 9 and the grating element 9A will be described without any particular distinction. Further, the external resonator type light emitting device 1A shown in FIG. 4 may be provided with a grating element 9A.
  • gain conditions and phase conditions which are conditions for emitting the emitted light B in the external resonator type light emitting device 1 according to the present embodiment, will be outlined.
  • the gain condition is defined by the following equation (1).
  • ⁇ t g th is a gain threshold value of the external resonator type light emitting device 1
  • ⁇ a , ⁇ g , ⁇ m , and ⁇ b are the active layer 5, the gap 14, the propagation unit 13, and the Bragg grating 12, respectively.
  • L a , L g , L m , and L b are the lengths of the active layer 5, the gap 14, the propagation unit 13, and the Bragg grating 12 in the optical axis direction, and r 1 and r 2 are respectively
  • the reflectance of the reflective film 6 and the Bragg grating 12, and C out is the coupling efficiency between the grating element 9 and the light source element 2.
  • Formula (1) indicates that if the gain of the resonator between the reflective film 6 and the Bragg grating 12 exceeds the loss represented by the right side, the laser oscillation and the emitted light B become the emitted light B. It represents that it is emitted to the outside. Since each variable on the right side has almost no wavelength dependence except for the reflectance r2 of the Bragg grating 12, the gain condition is actually determined according to the Bragg grating 12.
  • ⁇ i 2 ⁇ n i / ⁇ (i is a, g, m).
  • the length L a of the active layer 5 it is preferable that the viewpoint from 150 ⁇ m or more of increasing the power of the light emitted by B, as long 500 ⁇ m or less, it is preferable to 300 ⁇ m or less.
  • the length of the gap 14 L g is preferably set to 1 ⁇ m or 10 ⁇ m or less. This is for oscillation stabilization.
  • the length L b of the Bragg grating 12 is preferably from the viewpoint of reflectance 10 ⁇ m or more as described above, while preferably set to 300 ⁇ m or less. This has an effect of increasing the interval (longitudinal mode interval) ⁇ G TM of the wavelength ⁇ TM satisfying the phase condition of the equation (2), and contributes to mode hop suppression described later. From this viewpoint, it is more preferable that the length L b and 200 ⁇ m or less. Further, when the length Lb is short, the loss becomes small, so that the gain threshold value ⁇ t g th of the equation (1) can be reduced. As a result, driving with low current, low heat generation, and low energy is possible.
  • the length L m of the propagating portion 13 is preferably a 100 ⁇ m or less. This promotes stable oscillation. Further, the length L m is preferably be at least 10 [mu] m, more preferably not less than 20 [mu] m.
  • the length L WG grating element 9 in the optical axis direction is preferably set to 500 ⁇ m or less.
  • the length LWG is more preferably 400 ⁇ m or less, and even more preferably 300 ⁇ m or less. Further, the length LWG is preferably 50 ⁇ m or more.
  • FIG. 6 is a diagram showing the relationship between the primary emission gain curve in the active layer 5 and the reflectance profile of the grating element 9.
  • FIG. 6A shows the case of a certain temperature Ta
  • FIG. 6B shows the case of a temperature Tb higher than the temperature Ta.
  • the temperatures Ta and Tb are both -10 ° C. or higher and 70 ° C. or lower.
  • a temperature range of ⁇ 10 ° C. or more and 70 ° C. or less is particularly referred to as an assumed operation temperature range.
  • movement assumption temperature range is a range assumed as the minimum as the temperature range of the environment where the external resonator type light-emitting device 1 which concerns on this Embodiment operate
  • the gain of primary light emission has a temperature dependency associated with the temperature dependency of the band gap at least in the assumed operating temperature range.
  • the center wavelength of the reflectance profile of the grating element 9 also has temperature dependence. More specifically, the gain of primary light emission is the maximum value of the gain while the peak value shifts to the longer wavelength side as the temperature of the light source element 2 (active layer 5) is higher, at least in the assumed operating temperature range. Is known to decrease. Further, it is known that the peak value (center wavelength ⁇ G ) of the reflection profile of the grating element 9 shifts to the longer wavelength side as the temperature of the grating element 9 increases, at least in the assumed operating temperature range. However, the shape of the reflectance profile can be regarded as almost constant regardless of the temperature.
  • FIG. 6 also illustrates the reflectance profiles PF0 (a) and PF0 (b) of the Bragg grating used in the conventional external resonator type light emitting device for the cases of the temperatures Ta and Tb by broken lines. is doing.
  • a Bragg grating is usually set (adjusted) so that the center wavelength at room temperature (20 ° C. to 30 ° C.) substantially coincides with the wavelength that gives the peak value of the gain curve at that temperature.
  • the wavelength ⁇ 1 (a) giving the peak value Gp (a) in the gain curve GC1 is the center wavelength ⁇ g (a) of the reflectance profile PF0 (a).
  • the wavelength ⁇ 1 (b) that gives the peak value Gp (b) in the gain curve GC2 and the center wavelength ⁇ g (b) of the reflectance profile PF0 (b) coincide with each other. do not do.
  • the method of setting the Bragg grating as described above will be referred to as conventional setting.
  • the gain of the emitted light becomes large at an environmental temperature where the peak position of the gain curve GC1 and the peak position of the reflectance profile coincide with each other.
  • the peak shift of the gain curve is usually larger than the peak shift of the reflectance profile, so the difference between the two peak positions becomes larger and the reflection
  • the value of the gain at the position in the rate profile is much lower than when the two match.
  • the gain decreases from Gp (a) to Gg (b). That is, large gain fluctuations occur with changes in the environmental temperature.
  • the gain shift is from Gp (a) to Gp (b) because the peak shift of the gain curve is directly the peak shift of the emitted light. Will be reduced. Also in this case, a large gain fluctuation occurs.
  • the setting of the reflectance profile in the present embodiment takes into account gain fluctuations in the case of the conventional setting as described above.
  • the Bragg grating 12 has a relationship of ⁇ 1 ⁇ G ⁇ G / 2.
  • a reflectance profile is set (adjusted).
  • FIG. 6 the relationship between the reflectance profile PF1 (a) at the temperature Ta and the reflectance profile PF1 (b) at the temperature Tb, which is indicated by a solid line, is shown.
  • the wavelength range of the outgoing light B satisfying the phase condition is set in a range of ⁇ G ⁇ G / 2 to ⁇ G + ⁇ G / 2.
  • a Fabry-Perot resonator can be configured even in the section between the reflective film 6 and the reflective film 20, but by setting the reflectance of the Bragg grating 12 larger than the reflectance of the reflective film 20.
  • the gain threshold value of the resonator constituted by the Bragg grating 12 from the reflective film 6 can be reduced. For this reason, the oscillation mode of the Fabry-Perot resonator can be suppressed.
  • the gain threshold of the Fabry-Perot resonator is further increased. Can be high. As a result, the oscillation mode of the Fabry-Perot resonator can be further suppressed.
  • ⁇ G (Tmin) is the reflection wavelength of the Bragg grating at the lowest temperature of the assumed operation temperature
  • ⁇ G (Tmax) is the reflection wavelength of the Bragg grating at the highest temperature of the assumed operation temperature.
  • the difference value G (a) ⁇ G (b) can be made smaller than Gp (a) ⁇ Gg (b).
  • ⁇ G ⁇ 1 ⁇ 5 nm at 50 ° C. or lower and ⁇ G ⁇ 1 ⁇ 10 nm at 20 ° C. or lower it is more preferable that ⁇ G ⁇ 1 ⁇ 5 nm at 50 ° C. or lower and ⁇ G ⁇ 1 ⁇ 10 nm at 20 ° C. or lower. In such a case, the fluctuation of the output of the emitted light can be suppressed to 3% or less of the output at room temperature within the assumed operating temperature range.
  • G (a) -G (b) can be further reduced by using a material having a positive and large refractive index temperature dependency such as lithium niobate and lithium tantalate. Operation with less output fluctuation is possible.
  • the external resonator type light emitting device 1 performs temperature control using a Peltier element or the like as in the conventional device. Wavelength-stable operation and power-stable operation can be realized without providing a power monitoring function.
  • Mode hop suppression in the external resonator type light emitting device 1 will be described.
  • Mode hop suppression in the present embodiment is realized from two viewpoints of limiting the wavelengths that can be taken by mode hops and expanding the temperature range in which mode hops do not occur. .
  • the full width at half maximum ⁇ G of the main peak of the reflectivity profile 0.5nm or 3 It is set to a value larger than the conventional value of 0.0 nm or less. In other words, the main peak of the reflectance profile is broader than in the past.
  • the main peak the number of longitudinal modes that fall within the scope of the full width at half maximum ⁇ G around the wavelength lambda G (the number of wavelength lambda TM) is set to 2 to 5.
  • the spectral width of the laser-oscillated output is 0.1 nm or less.
  • the wavelength variation falls within the range of ⁇ G. That is, large wavelength fluctuations do not occur.
  • the temperature T mh at which the mode hop occurs is expressed by the following equation (3).
  • ⁇ G TM in equation (3) is an interval (longitudinal mode interval) of the wavelength ⁇ TM that satisfies the phase condition in equation (2) as described above, but since ⁇ TM can take a plurality of values, ⁇ G TM can also take a plurality of values.
  • d ⁇ G / dT is the temperature coefficient of the wavelength ⁇ G of the main peak in the reflectance profile of the grating reflectance as described above
  • d ⁇ TM / dT is the outgoing light B that satisfies the phase condition of Expression (2). Is the temperature coefficient of the wavelength ⁇ TM.
  • the refractive index n b of the optical material layer 11 is 1.8 or more as described above, the temperature coefficient d ⁇
  • equation (4) is satisfied. It is more preferable that the value on the left side of the formula (4) is 0.025 or less.
  • a pair of ridge grooves 19 are provided in the optical material layer 11 so that a ridge type optical waveguide 18 is provided in the grating element 9.
  • the optical material layer 11 also exists in portions other than the optical waveguide 18, specifically, below and on the side of the ridge groove 19.
  • the mode of providing the optical waveguide as a ridge-type optical waveguide is not limited to this.
  • a ridge-type optical waveguide made of a material (hereinafter also simply referred to as an optical material) having a refractive index nb of 1.8 or more is the same as the material constituting the optical material layer 11.
  • a grating element provided in a mode different from the above embodiment will be described.
  • FIG. 7 is a YZ cross-sectional view of various grating elements 109 (109A to 109E) according to the present embodiment.
  • a ridge-type optical waveguide 118 is formed of an optical material and has an elongated core extending in the X-axis direction.
  • the optical waveguide 118 is common in that the YZ section (hereinafter also referred to as a transverse section) forms a convex figure.
  • the ridge type optical waveguide 118 is made of an optical material in the various grating elements 109A to 109E according to the present embodiment.
  • the YZ section of the optical waveguide 118 has a convex shape means that the line segment connecting any two points of the outer contour line of the transverse section of the optical waveguide 118 is inside the outer contour line of the transverse section. Means to be located.
  • convex figures include polygons such as triangles, quadrilaterals, hexagons, and octagons, circles, and ellipses. Among these, a quadrangle having an upper side, a lower side, and a pair of side surfaces is preferable, and a trapezoid is particularly preferable.
  • the optical waveguide 118 of the grating element 109 is also in the same manner as the optical waveguide 18 of the grating element 9 provided in the external resonator type light emitting device 1 according to the first embodiment.
  • the Bragg grating 12 and the propagation unit 13 are provided.
  • non-reflective films similar to the non-reflective films 7B and 7C included in the grating element 9 are provided at both ends of the optical waveguide 118 in the X-axis direction.
  • the external resonator type light emitting device configured using the grating element 109 is configured by replacing the grating element 9 of the external resonator type light emitting device 1 according to the first embodiment with the grating element 109. The That is, all the requirements regarding the oscillation of the laser light in the grating element 109 are the same as the requirements in the grating element 9 according to the first embodiment.
  • a grating element 109A shown in FIG. 7A has a configuration in which a buffer layer (first buffer layer) 116 is provided on a support substrate 10, and an optical waveguide 118 (118A) is provided on the buffer layer 116.
  • the optical waveguide 118A has a trapezoidal shape in which the cross section is longer in the lower base than in the upper base. That is, in the optical waveguide 118A, the upper side surface facing the lower side surface is narrower than the lower side surface in contact with the buffer layer 116.
  • the width W m of the optical waveguide 118A is 1.5 ⁇ m or more 8 ⁇ m or less according.
  • T h (the height in the Z-axis direction) thickness of the optical waveguide 118A is preferably a 0.5 [mu] m ⁇ 3 [mu] m.
  • the maximum width of the optical waveguide 118A is preferably 0.7 ⁇ m or more and 9 ⁇ m or less.
  • the first buffer layer 116 is formed to a thickness of about 0.2 ⁇ m to 2 ⁇ m with a material selected from materials having a refractive index smaller than that of the optical material, such as SiO 2 , alumina, polyimide, and epoxy resin.
  • the buffer layer 116 and the air (air layer) existing around the optical waveguide 118 function as a clad having a relatively lower refractive index than the optical waveguide 118 serving as the core.
  • the buffer layer 116 and the optical waveguide 118A in the grating element 109A are sequentially formed by a known thin film forming method such as sputtering, vacuum deposition, and CVD, and the thin film layer made of an optical material constituting the optical waveguide 118A. Then, the latter unnecessary portion can be removed by etching. In addition, the aspect which forms the Bragg grating 12 in the case of the etching concerned may be sufficient.
  • the grating element 109B shown in FIG. 7B further includes a buffer layer (second buffer layer) 117 that covers the optical waveguide 118A from above and from the side in the grating element 109A shown in FIG. 7A. It has a configuration. Similar to the first buffer layer 116, the second buffer layer 117 may be formed of a material selected from, for example, SiO 2 , alumina, polyimide, epoxy resin, etc., but is different from the first buffer layer 116. It is made of a material. The second buffer layer 117 is formed so that the thickness of the upper portion 117b of the optical waveguide 118 is about 0.2 ⁇ m to 2 ⁇ m.
  • a buffer layer 116 and an optical waveguide 118A are formed in the same manner as in the case of forming the grating element 109A. Further, after the Bragg grating 12 is formed, a known thin film formation such as sputtering, vacuum evaporation, or CVD is formed. This can be done by forming the buffer layer 117 by a technique.
  • the grating element 109C shown in FIG. 7C includes an optical waveguide 118B provided so as to have a trapezoidal shape in which the horizontal cross section is shorter than the upper base, and the grating shown in FIG. 7B.
  • the structure is similar to that of the element 109B.
  • the lower side surface in contact with the first buffer layer 116 is narrower than the upper side surface facing the lower side surface.
  • the arrangement mode of the optical waveguide 118B corresponds to a configuration in which the optical waveguide 118A is turned upside down.
  • the formation of the grating element 109C can be performed in the same manner as the formation of the grating element 109B, except that the etching conditions for etching a thin film layer made of an optical material are different.
  • the aspect which has the structure which the grating element 109 is provided with the optical waveguide 118B which does not comprise the 2nd buffer layer 117 may be sufficient. This corresponds to a vertically inverted optical waveguide 118A of the grating element 109A.
  • each of the grating elements 109D and 109E shown in FIGS. 7D and 7E has a configuration in which a buffer layer 122 made of one material is provided around the optical waveguide 118A or 118B.
  • the buffer layer 122 may be formed of a material selected from SiO 2 , alumina, polyimide, epoxy resin, and the like.
  • the grating elements 109D and 109E are formed in the same procedure as the grating elements 109B and 109C, the buffer layer 122 is formed for the portion corresponding to the first buffer layer 116, and the optical waveguide 118A or 118B is formed.
  • the remaining portion of the buffer layer 122 can be formed in the same manner as the second buffer layer 117.
  • the lower portion 122a of the optical waveguide 118 has the same thickness as the first buffer layer 116 of the grating elements 109A to 109C, and the upper portion 122b of the optical waveguide 118 has a thickness of the grating element 109A.
  • the second buffer layer 117 of ⁇ 109C is formed to have the same thickness as the upper portion 117b of the optical waveguide 118.
  • the buffer layer 116, 117, or 122 is formed so as to cover substantially the entire surface of the support substrate 10, this is an essential aspect. Absent.
  • the support substrate 10 may be partially exposed as long as the buffer layer 116 exists at least below the optical waveguide 118A.
  • the grating elements 109B to 109E if the periphery of the optical waveguide 118A or 118B is covered, the side portion 117c or 122c of the optical waveguide 118 needs to be provided so as to cover the entire support substrate 10.
  • the support substrate 10 may be partially exposed.
  • the grating element 109 it can be formed by bonding with the adhesive layer 15 as in the case of the grating element 9 according to the first embodiment.
  • a buffer layer 116 is formed in advance on a substrate made of an optical material to be the optical waveguide 118A by sputtering or the like, and then the buffer layer 116 and the base substrate 10 are formed.
  • the optical waveguide 118 may be formed by bonding with the adhesive layer 15 and then etching.
  • a buffer layer is further provided above the optical waveguide 118 such as the grating elements 109B to 109E, this may be performed after the etching and the Bragg grating 12 are formed.
  • the grating element 109 has the same configuration as the reflection wavelength setting mode in the grating element 9 in the first embodiment.
  • the reflection wavelength it is possible to perform wavelength stable operation and power stable operation without performing temperature control using a Peltier element, etc., or even having a power monitoring function, as was done in conventional devices. Is realized.
  • the optical material layer 11 may be formed on the support substrate 10 as a thin film layer.
  • Examples of the method for forming the thin film layer include sputtering, vapor deposition, and CVD. In this case, since the optical material layer 11 is directly formed on the support substrate 10, it is not necessary to form the adhesive layer 15.
  • Each end face of the light source element 2 and the grating element 9 may be cut obliquely for the purpose of suppressing end face reflection.
  • light sources such as laser arrays arranged one-dimensionally instead of the light source elements 2 described above.
  • a super luminescence diode or a semiconductor optical amplifier (SOA) may be used as the light source element 2.
  • Example 1 A grating element 9A shown in FIG. 5 was produced and its characteristics were evaluated.
  • a metal Ti film is formed as a mask on one main surface of the crystal substrate, and the pattern ⁇ is 225 nm, the length L b is 150 ⁇ m, and the depth is t d by patterning by a photolithography technique and fluorine-based reactive ion etching.
  • a grating pattern to be a Bragg grating 12 having a thickness of 15 nm was formed. At the time of patterning, the length L m of the propagating portion 13 was set to be 20 [mu] m.
  • the lower buffer layer 16 made of SiO 2 was formed to a thickness of 0.5 ⁇ m on the surface on which the ridge groove 19 was formed by a sputtering apparatus.
  • a black LN substrate was prepared as the support substrate 10, and one main surface thereof and the lower buffer layer 16 were bonded to obtain a laminate.
  • the adhesive layer 15 was formed using an epoxy resin.
  • the non-adhesive surface side of the black LN substrate is attached to a polishing surface plate, the other main surface of the exposed LN substrate (the surface where the Bragg grating is not formed) is precisely polished, and the thickness Ts of the optical material layer 11 is obtained.
  • the laminate was removed from the polishing surface plate, and an upper buffer layer 17 made of SiO 2 was formed to a thickness of 0.5 ⁇ m on the polishing surface by a sputtering apparatus.
  • the optical characteristics at room temperature (20 ° C.) of the obtained grating element 9A were evaluated. Specifically, using a super luminescence diode (SLD) that is a broadband wavelength light source, TE mode light is input to the grating element 9A, and the output light is analyzed with an optical spectrum analyzer, and the obtained transmission is obtained. From the characteristics, the reflection characteristics of the grating element 9A were evaluated.
  • SLD super luminescence diode
  • the grating element 9A was mounted to produce the external resonator type light emitting device 1 of FIG.
  • a GaAs laser in which the active layer 5 is made of GaAs, the reflectance of the reflective film 6 is 97%, and the reflectance of the reflective film 20 is 3% is prepared as the light source element 2.
  • the center wavelength of the laser light (primary light emission) emitted from the light source element 2 at room temperature was 980 nm, and the output was 60 mW.
  • the distance L g between the light source element 2 and the grating element 9 was 1 [mu] m.
  • the wavelength 990 corresponding to the central wavelength ⁇ G of the reflection profile of the Bragg grating 12 at room temperature.
  • An oscillation light (emitted light B) oscillating at .9 nm was obtained.
  • the output (laser output) was 40.1 mW, which is smaller than the output of primary light emission.
  • the difference in the laser output of the oscillation light (emitted light B) between 20 ° C. and 70 ° C. is 0.5 mW at the maximum, and the oscillation wavelength ⁇ TM is The maximum difference was 5.2 nm.
  • the maximum laser output difference of the oscillation light (emitted light B) between 20 ° C. and 70 ° C. is 0.5 mW
  • the oscillation wavelength ⁇ TM is The maximum difference was 5.0 nm.
  • Example 3 the grating element 9 including the optical material layer 11 as a thin film layer was formed.
  • a grating pattern to be the Bragg grating 12 with t d 40 nm was formed.
  • the laminate was cut into a bar shape in which the extending direction of the black grating was the longitudinal direction using a dicing apparatus. After the cut surface was optically polished, an AR coating having a reflectance of 0.1% was formed as the antireflective films 7B and 7C. Finally, the grating element 9 was obtained by cutting the chip.
  • the wavelength ⁇ 1 of the primary light emission in the external resonator type light emitting device 1 was measured in Table 3.
  • the temperature coefficient d ⁇ TM / dT of the oscillation light was 0.05 nm / ° C., and the formula (4) was satisfied.
  • the difference in laser output of the oscillation light (emitted light B) between 20 ° C. and 70 ° C. is 2.2 mW at the maximum, and the oscillation wavelength ⁇ TM is The difference was a maximum of 2.1 nm.
  • the grating element 9A and the external resonator type light emitting device 1A were manufactured and evaluated in the same procedure as in Example 1 except that the pitch ⁇ of the Bragg grating 12 was set to 222 nm.
  • the results of the laser output were measured in Table 4.
  • the temperature coefficient d ⁇ TM / dT of the oscillation light was 0.05 nm / ° C., and the formula (4) was satisfied.
  • the maximum laser output difference of the oscillation light (emitted light B) between 20 ° C. and 70 ° C. is 9.6 mW, and the oscillation wavelength ⁇ TM is The maximum difference was 5.0 nm.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)

Abstract

L'invention concerne un dispositif émettant de la lumière de type à résonateur extérieur dans lequel une longueur d'onde extrêmement stable est garantie et une variation de la sortie optique est supprimée. Le dispositif émettant de la lumière de type à résonateur extérieur comprend : une source de lumière laser à semi-conducteur ayant une couche active permettant d'émettre de la lumière laser; et un élément réseau comprenant un guide d'ondes optiques de type à crête, dont la direction longitudinale est la direction d'axe optique de la lumière laser émise par la couche active, et un réseau de Bragg (BG) situé au niveau d'une partie intermédiaire du guide d'ondes optiques et faisant osciller la lumière ayant un composant de longueur d'onde prédéterminé de la lumière laser incidente entre la source de lumière laser à semi-conducteur et le BG pour produire en sortie la lumière ayant oscillé vers l'extérieur du dispositif en tant que lumière de sortie. Si la longueur d'onde de la lumière laser émise par la source de lumière laser à semi-conducteur est représentée par λ1 et la longueur d'onde centrale et la largeur totale à la moitié du maximum du profil de réflectivité du BG sont représentées respectivement par λG et ΔλG, la relation λ1 < λG - ΔλG/2 est respectée au moins dans la plage de température de -10 °C à 30 °C (inclus), et la région de longueur d'onde de la lumière de sortie se trouve dans la plage de λG - ΔλG/2 à λG + ΔλG/2 (inclus).
PCT/JP2015/051358 2014-01-20 2015-01-20 Dispositif émettant de la lumière de type à résonateur extérieur WO2015108197A1 (fr)

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
WO2017043222A1 (fr) * 2015-09-08 2017-03-16 日本碍子株式会社 Dispositif optique

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JPH10303495A (ja) * 1997-04-30 1998-11-13 Fujitsu Ltd 半導体レーザ
WO2000045482A1 (fr) * 1999-01-27 2000-08-03 The Furukawa Electric Co., Ltd. Module laser a semi-conducteur
JP2002050827A (ja) * 2000-08-01 2002-02-15 Sumitomo Electric Ind Ltd 半導体レーザ
US20070127538A1 (en) * 2005-12-07 2007-06-07 Electronics And Telecommunications Research Institute Athermal external cavity laser
JP2008152003A (ja) * 2006-12-18 2008-07-03 Seiko Epson Corp 光モジュール及び光通信装置
US20120099611A1 (en) * 2009-06-12 2012-04-26 Mel External cavity tunable laser module
WO2013034813A2 (fr) * 2011-09-07 2013-03-14 Epicrystals Oy Unité de conversion de longueur d'onde
WO2014196553A1 (fr) * 2013-06-07 2014-12-11 日本碍子株式会社 Dispositif électroluminescent de type à résonateur externe

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Publication number Priority date Publication date Assignee Title
JPH10303495A (ja) * 1997-04-30 1998-11-13 Fujitsu Ltd 半導体レーザ
WO2000045482A1 (fr) * 1999-01-27 2000-08-03 The Furukawa Electric Co., Ltd. Module laser a semi-conducteur
JP2002050827A (ja) * 2000-08-01 2002-02-15 Sumitomo Electric Ind Ltd 半導体レーザ
US20070127538A1 (en) * 2005-12-07 2007-06-07 Electronics And Telecommunications Research Institute Athermal external cavity laser
JP2008152003A (ja) * 2006-12-18 2008-07-03 Seiko Epson Corp 光モジュール及び光通信装置
US20120099611A1 (en) * 2009-06-12 2012-04-26 Mel External cavity tunable laser module
WO2013034813A2 (fr) * 2011-09-07 2013-03-14 Epicrystals Oy Unité de conversion de longueur d'onde
WO2014196553A1 (fr) * 2013-06-07 2014-12-11 日本碍子株式会社 Dispositif électroluminescent de type à résonateur externe

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Publication number Priority date Publication date Assignee Title
WO2017043222A1 (fr) * 2015-09-08 2017-03-16 日本碍子株式会社 Dispositif optique

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