WO2015102075A1 - Composition de formation d'un film conducteur, film conducteur, transistor à couche mince organique, papier électronique, dispositif d'affichage et carte câblée - Google Patents

Composition de formation d'un film conducteur, film conducteur, transistor à couche mince organique, papier électronique, dispositif d'affichage et carte câblée Download PDF

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WO2015102075A1
WO2015102075A1 PCT/JP2014/083401 JP2014083401W WO2015102075A1 WO 2015102075 A1 WO2015102075 A1 WO 2015102075A1 JP 2014083401 W JP2014083401 W JP 2014083401W WO 2015102075 A1 WO2015102075 A1 WO 2015102075A1
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group
general formula
composition
carbon atoms
conductive film
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PCT/JP2014/083401
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English (en)
Japanese (ja)
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泰明 松下
季彦 松村
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富士フイルム株式会社
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Priority to JP2015555867A priority Critical patent/JP6100924B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24—Electrically-conducting paints
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D201/00—Coating compositions based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Definitions

  • the present invention relates to a composition for forming a conductive film, a conductive film formed using the same, an organic thin film transistor, an electronic paper, a display device and a wiring board.
  • organic devices such as FETs (field effect transistors) used for liquid crystal displays and organic EL displays, and devices using logic circuits such as RFID (RF tags) and memories, etc.
  • Thin film transistors organic TFTs are used.
  • an organic thin film transistor includes a substrate, a gate insulating film, an organic semiconductor layer, and three electrodes (a gate electrode, a source electrode, and a drain electrode).
  • a method of forming a conductive film such as an electrode or wiring on a substrate or an insulating film
  • a method of forming a conductive film by applying a dispersion of conductive particles (for example, silver particles) and sintering it It has been known. Since the above method is simple, energy saving, and resource saving as compared with the conventional forming method by high heat / vacuum process (sputtering) or plating processing, great expectations are drawn in the development of the next generation electronics.
  • Patent Document 1 discloses a conductive paste containing a conductive powder and an additive, and describes that the conductive paste can be used for wiring formation of a circuit board.
  • sulfonic acids such as dodecyl sulfonic acid triethanolamine salt and / or derivatives thereof are used as additives in the examples.
  • Patent Document 2 describes a conductive paste containing a copper powder, a thermosetting resin, and an additive such as dimethylalkyl lauryl betaine.
  • Patent Documents 1 and 2 to form an electrode using the composition described therein, to fabricate an organic thin film transistor, mobility, and insulation reliability between the electrodes.
  • the obtained organic thin film transistor does not satisfy the above characteristics (mobility and insulation reliability) at a level required nowadays, and further improvement is necessary.
  • the present invention provides a composition for forming a conductive film, an electroconductive film formed using the composition, an organic thin film transistor, and an electron, which can provide an organic thin film transistor exhibiting excellent insulation reliability and high mobility. It aims to provide paper, display devices and wiring boards.
  • the present inventors have found that excellent insulation reliability and high mobility can be obtained by forming an electrode using a composition for forming a conductive film containing conductive particles and a specific compound. It has been found that an organic thin film transistor showing the following can be obtained, resulting in the present invention. That is, the present inventors have found that the above problems can be solved by the following configuration.
  • Additives (B) is a compound represented by the general formula (III) described below, Y is -SO 3 H, a conductive film forming composition as described in (1).
  • the additive (B) is a compound represented by the general formula (I) described later, and C + represents a cation selected from the group consisting of the general formulas (A) to (B) described later
  • composition for electrically conductive film formation as described in (1) whose additive (B) is a compound represented by general formula (II) mentioned later.
  • conductive particles (A) are particles of a metal selected from the group consisting of Ag, Cu, Al, Ni and Ta.
  • Composition. (6) The method according to any one of (1) to (5), wherein the content of the additive (B) is 1.5 to 7.0% by mass with respect to the total mass of the composition for forming a conductive film. Composition for conductive film formation.
  • An organic thin film transistor comprising an electrode formed using the composition for forming a conductive film according to any one of (1) to (6).
  • a wiring board comprising a wiring formed using the composition for forming a conductive film according to any one of (1) to (6).
  • a composition for forming a conductive film, an electrically conductive film formed using the same, an organic thin film transistor, and an electron which can obtain an organic thin film transistor exhibiting excellent insulation reliability and high mobility. Paper, display devices and wiring boards can be provided.
  • a numerical range represented using “to” means a range including numerical values described before and after “to” as the lower limit value and the upper limit value.
  • composition for forming a conductive film contains conductive particles (A) and an additive (B). Since the composition of the present invention has such a constitution, it is considered that a desired effect can be obtained.
  • the electrode of the organic thin film transistor When a voltage is applied to the electrode of the organic thin film transistor, a conductive substance such as metal in the electrode is ionized by the action of an electric field, and ions may move (migrate) in the organic semiconductor layer. When such migration occurs, the insulation between the source / drain electrodes is reduced. That is, the insulation reliability is reduced.
  • the electrode When an electrode (conductive film) is formed using the composition of the present invention, the electrode contains a conductive substance such as a metal and an additive (B) containing a specific cation and anion (also In the compound represented by the general formula (III), proton delivery generates a cation and an anion).
  • the additive (B) in the electrode traps it and ion migration is prevented. That is, the additive (B) acts as an excellent migration inhibitor (migration inhibitor).
  • migration inhibitor migration inhibitor
  • an organic thin film transistor having an electrode formed using the composition of the present invention is considered to exhibit excellent insulation reliability.
  • this action is particularly due to the fact that the specific anion and cation of the additive (B) have extremely high affinity with the ion of a conductive substance such as metal.
  • the additive (B) has high stability in the electrode, it is difficult to be released in the adjacent organic semiconductor layer or the like.
  • the organic thin film transistor exhibits high mobility with almost no adverse effect on the mobility.
  • the additive (B) trapped the ion, especially this effect is considered to originate in having the property which the specific cation and anion which the additive (B) has do not release easily.
  • the additive (B) is excellent in thermal stability, and also has resistance to high temperature processes and the like at the time of preparation of the organic thin film transistor.
  • the conductive particles (A) contained in the composition of the present invention are not particularly limited as long as they are particulate conductive materials, but for example, metal particles are preferable.
  • Particulate refers to small particles, and specific examples thereof include spheres and ellipsoids. It does not have to be a perfect sphere or ellipsoid, but may be partially distorted.
  • the conductive particles (A) are preferably particles of a metal selected from the group consisting of Ag (silver), Cu (copper), Al (aluminum), Ni (nickel) and Ta (tantalum), and silver More preferably, they are particles or copper particles, and more preferably silver particles.
  • the conductive particles (A) are preferably conductive nanoparticles.
  • the preparation method is not particularly limited.
  • a reducing agent such as N, N-diethylhydroxylamine in the presence of a dispersing agent in an aqueous solution of a silver salt such as silver nitrate
  • An aqueous solution of H.sub.2O.sub.4 can be added dropwise and the silver salt can be prepared by reduction with a reducing agent.
  • the average particle size of the conductive particles (A) is not particularly limited, but is preferably 200 nm or less, and more preferably 100 nm or less.
  • the lower limit is also not particularly limited, but is preferably 5 nm or more.
  • the average particle size in the present invention refers to the average primary particle size.
  • the average particle size is determined by measuring the particle size (diameter) of at least 50 or more conductive particles by transmission electron microscope (TEM) observation, and arithmetically averaging them. In the observation view, when the shape of the conductive particles is not a perfect circle, the major axis is measured as the diameter.
  • the content of the conductive particles (A) is not particularly limited, but is preferably 5.0 to 80.0% by mass, based on the total mass of the composition, and 10.0 to 60 It is more preferable that the content is 0% by mass.
  • composition of the present invention is a group consisting of a compound represented by general formula (I) described later, a compound represented by general formula (II) described later, and a compound represented by general formula (III) described later And at least one additive (B) selected from As described above, the additive (B) suppresses metal ion migration.
  • additive (B) suppresses metal ion migration.
  • C + represents a cation selected from the group consisting of the following general formulas (A) to (D).
  • the cation selected from the group consisting of the general formulas (A) to (C) is preferable in that the effect of the present invention is more excellent, and the reason why the obtained organic thin film transistor shows more excellent insulation reliability It is more preferable that it is a cation represented by general formula (A) or general formula (B) from this.
  • R 1 to R 3 each independently represent an aliphatic hydrocarbon group having 1 to 5 carbon atoms or an aromatic hydrocarbon group. Among them, all of R 1 to R 3 are at a point where the insulation reliability of the organic thin film transistor is more excellent and / or the mobility is more excellent (hereinafter, also simply referred to as “the point where the effect of the present invention is more excellent”). It is preferable that it is an aliphatic hydrocarbon group having 1 to 5 carbon atoms.
  • the aliphatic hydrocarbon group may be linear, branched or cyclic. The carbon number of the aliphatic hydrocarbon group is 1 to 5, and 1 to 3 is more preferable in that the effect of the present invention is more excellent.
  • an alkyl group, an alkenyl group, an alkynyl group etc. are mentioned as a specific example of the said aliphatic hydrocarbon group.
  • the aliphatic hydrocarbon group may have a substituent as long as the effects of the present invention are not impaired, and as the above-mentioned substituent, for example, a substituent Q to be described later (with the exception of the aliphatic hydrocarbon group) Can be mentioned.
  • the carbon number of the aromatic hydrocarbon group is not particularly limited, but is preferably 6 to 18.
  • an aryl group (a phenyl group, a tolyl group, xylyl group etc.), a naphthyl group, etc. are mentioned.
  • the aromatic hydrocarbon group may have a substituent as long as the effects of the present invention are not impaired, and examples of the substituent include the substituent Q described later. * Indicates a bonding position with L described later.
  • R 1 to R 3 may be bonded to each other to form a ring structure. That is, two or more groups selected from the group consisting of R 1 to R 3 may be bonded to each other to form a ring structure.
  • to combine with each other to form a ring structure means that two or more groups are linked at any position via a single bond, a double bond, a triple bond or a divalent linking group, Represents the formation of The divalent linking group is not particularly limited. For example, -CO-, -NH-, -NR- (R: substituent (eg, substituent Q described later)), -O-, -S-, or The group etc. which combined these are mentioned.
  • R 4 is an aliphatic hydrocarbon group having 1 to 5 carbon atoms
  • Specific examples and preferable embodiments of the aliphatic hydrocarbon group having 1 to 5 carbon atoms are the same as the aliphatic hydrocarbon groups having 1 to 5 carbon atoms represented by the above-mentioned R 1 to R 3 .
  • the above R 19 to R 24 and R B1 to R B4 each independently represent a hydrogen atom or a hydrocarbon group.
  • the aliphatic hydrocarbon group may be linear, branched or cyclic.
  • the carbon number of the aliphatic hydrocarbon group is not particularly limited, but is preferably 1 to 12.
  • An alkyl group, an alkenyl group, an alkynyl group etc. are mentioned as a specific example of the said aliphatic hydrocarbon group.
  • the carbon number of the aromatic hydrocarbon group is not particularly limited, but is preferably 6 to 18.
  • an aryl group (a phenyl group, a tolyl group, xylyl group etc.), a naphthyl group, etc. are mentioned.
  • R 19 and R 20 may be bonded to each other to form a ring structure.
  • the aliphatic hydrocarbon group having 1 to 5 carbon atoms represented by R 4 and the hydrocarbon groups represented by R 19 to R 24 and R B1 to R B4 may have a substituent.
  • the substituent is, for example, the substituent Q described later.
  • R 5 represents a hydrogen atom, an aliphatic hydrocarbon group having 1 to 5 carbon atoms, an alkoxy group, an alkylthio group, a hydroxy group, a mercapto group, or —NR 25 R 26 .
  • Specific examples and preferable embodiments of the aliphatic hydrocarbon group having 1 to 5 carbon atoms are the same as the aliphatic hydrocarbon groups having 1 to 5 carbon atoms represented by the above-mentioned R 1 to R 3 .
  • R 25 and R 26 each independently represent a hydrogen atom or a hydrocarbon group, and may combine with each other to form a ring structure.
  • the above-mentioned hydrocarbon group is the same as the above-mentioned hydrocarbon groups represented by R 19 to R 24 and R B1 to R B4 .
  • the aliphatic hydrocarbon group having 1 to 5 carbon atoms represented by R 5 and the hydrocarbon group represented by R 25 and R 26 may have a substituent, and as the above-mentioned substituent For example, the substituent Q etc. which are mentioned later are mentioned.
  • Specific examples and preferable embodiments of the aliphatic hydrocarbon group having 1 to 5 carbon atoms are the same as the aliphatic hydrocarbon groups having 1 to 5 carbon atoms represented by the above-mentioned R 1 to R 3 .
  • the above R 27 to R 32 each independently represent a hydrogen atom or a hydrocarbon group.
  • R 27 and R 28 may be bonded to each other to form a ring structure.
  • the aliphatic hydrocarbon group having 1 to 5 carbon atoms represented by R 6 and the hydrocarbon group represented by R 27 to R 32 may have a substituent, and as the above-mentioned substituent For example, the substituent Q etc. which are mentioned later are mentioned.
  • both of R 5 and R 6 in the general formula (B) are not simultaneously an alkoxy group, a hydroxy group, an alkylthio group or a mercapto group.
  • all of R 4 , R 5 and R 6 in the general formula (B) are not simultaneously the above -NR 19 R 20 , the above -NR 25 R 26 or the above -NR 27 R 28 . That is, for example, R 4 is -NR 19 R 20 and R 5 is -NR 25 R 26 and R 6 is not-NR 27 R 28 at the same time.
  • R 4 to R 6 may be bonded to each other to form a ring structure. That is, two or more groups selected from the group consisting of R 4 to R 6 may be bonded to each other to form a ring structure. * Indicates the bonding position with L.
  • the divalent group derived from R 4 in the ring structure is preferably a group selected from the group consisting of general formulas (a) to (f) below.
  • the divalent group derived from R 5 in the ring structure is selected from the group consisting of the following general formulas (a) to (e), (g) and (h) It is preferably a divalent group.
  • the divalent group derived from R 6 in the ring structure is a divalent group selected from the group consisting of the following general formulas (a) to (h) preferable.
  • both “a divalent group derived from R 5 in the ring structure” and “a divalent group derived from R 6 in the ring structure” are simultaneously represented by the following general formula (g) or (h) Is not a group.
  • a divalent group derived from R 4 in a ring structure “a divalent group derived from R 5 in a ring structure” and “a divalent group derived from R 6 in a ring structure”
  • a divalent group derived from R 4 in a ring structure “a divalent group derived from R 5 in a ring structure” and “a divalent group derived from R 6 in a ring structure”
  • R 35 to R 48 each independently represent a hydrogen atom or a substituent.
  • the substituent Q mentioned later is mentioned, for example.
  • the asterisk (asterisk) represents a bonding position
  • one of the two asterisks represents a bonding position of each group in the general formula (B)
  • the other asterisk represents a ring It represents the bonding position when bonding to each other to form a structure.
  • R 4 and R 6 in general formula (B) combine with each other to form a ring structure, and a divalent group derived from R 4 in the ring structure is a group represented by general formula (a)
  • a divalent group derived from R 4 in the ring structure is a group represented by general formula (a)
  • one asterisk in the general formula (a) is N in the general formula (B) Represents a bonding position to +
  • one asterisk in the general formula (b) represents a bonding position to a carbon atom (a carbon atom to which R 5 and R 6 are bonded) in the general formula (B);
  • the other asterisk in (a) is combined with the other asterisk in the general formula (b).
  • R s is a group represented by R 5 or R 6 described above (for example, a hydrogen atom, an aliphatic hydrocarbon group having 1 to 5 carbon atoms, an alkoxy group, an alkylthio group, a hydroxy group, a mercapto group,-
  • R 7 to R 9 each independently represent an aliphatic hydrocarbon group having 1 to 5 carbon atoms or an aromatic hydrocarbon group. Specific examples and preferable embodiments of the aliphatic hydrocarbon group or the aromatic hydrocarbon group are the same as the respective groups represented by R 1 to R 3 described above. R 7 to R 9 may be bonded to each other to form a ring structure. That is, two or more groups selected from the group consisting of R 7 to R 9 may be bonded to each other to form a ring structure. * Indicates the bonding position with L.
  • R 10 and R 11 each independently represent an aliphatic hydrocarbon group having 1 to 5 carbon atoms, or an aromatic hydrocarbon group. Specific examples and preferable embodiments of the aliphatic hydrocarbon group or the aromatic hydrocarbon group are the same as the respective groups represented by R 1 to R 3 described above. R 10 and R 11 may be bonded to each other to form a ring structure. * Indicates the bonding position with L.
  • L represents a divalent linking group.
  • the divalent linking group include, for example, -COO-, -OCO-, -CONH-, -NHCO-, -CO-, -O-, -S-, -SO-, -SO 2- , and the like.
  • Aliphatic hydrocarbon group for example, alkylene group (preferably having 1 to 6 carbon atoms), cycloalkylene group (preferably having 3 to 10 carbon atoms), alkenylene group (preferably having 2 to 6 carbon atoms)), divalent aromatic Group hydrocarbon group (for example, phenylene group) or a divalent linking group in which a plurality of these are combined.
  • R 51 to R 53 each independently represent a linear or branched alkyl or alkenyl group having 1 to 5 carbon atoms.
  • the alkyl group may be linear or branched.
  • the number of carbon atoms contained in the alkyl group is 1 to 5, but is preferably 1 to 3 in that the effect of the present invention is more excellent.
  • An alkenyl group may be linear or branched.
  • the number of carbon atoms contained in the alkenyl group is 1 to 5, but is preferably 1 to 3 in that the effect of the present invention is more excellent.
  • R 54 represents a hydrogen atom or an alkyl group.
  • the carbon number of the alkyl group is not particularly limited, but is preferably 1 to 5 and more preferably 1 to 3 in that the effect of the present invention is more excellent.
  • a 1 represents an alkylene group having 1 to 3 carbon atoms or a hydroxyalkylene group.
  • hydroxy alkylene group is intended an alkylene group having a hydroxy group (—OH group).
  • the number of carbon atoms contained in the alkylene group and hydroxyalkylene group is 1 to 3, preferably 1 to 2.
  • Examples of A 1 include methylene, ethylene, propylene, isopropylene, hydroxyethyl and 2-hydroxypropylene.
  • X represents a basic group.
  • the type of basic group is not particularly limited. For example, (a) amino group (-NH 2 ), (b) substituted amino group, (c) amidino group which may have a substituent, (d) substituted Examples thereof include a guanidino group which may have a group, a hydrazino group which may have a substituent (e), and a nitrogen-containing heterocyclic group which may have a substituent (f).
  • substituted amino group (mono- or di-substituted amino group), methylamino, ethylamino, propylamino, isopropylamino, butylamino, isobutylamino, tert-butylamino, pentylamino, hexylamino, heptylamino, octylamino , Dimethylamino, diethylamino, dipropylamino, dibutylamino, dipentylamino, dihexylamino, diheptylamino, dioctylamino, N-methyl-N-ethylamino, cyclopropylamino, cyclopentylamino, cyclohexylamino, phenylamino, diphenylamino , Dibenzylamino, N-phenyl-N-methylamino, N-phenyl-N-ethylamin, Di
  • Rx 1 and Rx 2 each independently represent an aliphatic hydrocarbon group which may have a hetero atom.
  • the number of carbon atoms in the aliphatic hydrocarbon group is not particularly limited, but is preferably 1 to 5 and more preferably 1 to 3 in that the effect of the present invention is more excellent.
  • the aliphatic hydrocarbon may contain hetero atoms (eg, oxygen atom, sulfur atom, nitrogen atom, etc.).
  • Rx 1 and Rx 2 may combine with each other to form a ring. For example, Rx 1 and Rx 2 may be combined to form an alkenyl group which may have an oxygen atom.
  • guanidino group which may have a substituent include methyl guanidino, ethyl guanidino, propyl guanidino, isopropyl guanidino, butyl guanidino, isobutyl guanidino, tert-butyl guanidino, pentyl guanidino, hexyl guanidino, heptyl guanidino, octyl guanidino N, N-dimethyl guanidino, N, N'-dimethyl guanidino, N, N, N'-trimethyl guanidino, N, N, N ', N''-tetramethyl guanidino, N, N-diethyl guanidino, N, N'-diethyl guanidino, N, N'- triethyl guanidino, N, N, N ', N'-triethyl
  • a hydrazino group which may have a substituent, for example, methylhydrazino, ethylhydrazino, propylhydrazino, isopropylhydrazino, butylhydrazino, isobutylhydrazino, tert-butylhydrazino, pentylhydrazino, Hexylhydrazino, heptylhydrazino, octylhydrazino, N, N-dimethylhydrazino, N, N'-dimethylhydrazino, N, N, N'-trimethylhydrazino, N, N-diethylhydrazino, N, N'-diethylhydrazino, N, N, N'-triethylhydrazino, N, N-dipropylhydrazino, N, N'-dipropylhydrazino, N, N, N'-tripropylhydrazino, N, N
  • the nitrogen-containing heterocyclic ring in the nitrogen-containing heterocyclic group which may have a substituent is, for example, a 3- to 15-membered monocyclic or fused heterocyclic ring having at least one nitrogen atom, a bridged heterocyclic ring, or a spiro bond Heterocyclic rings such as pyrrole, imidazole, triazole, pyrazole, pyridine, pyrimidine, pyridazine, azepine, diazepine, oxazole, thiazole, isoxazole, isothiazole, indole, isoindole, quinoline, isoquinoline, benzoxazole , Benzothiazole, benzimidazole, aziridine, azetidine, pyrrolidine, piperidine, piperazine, morpholine, thiomorpholine, perhydroazepine, perhydrodiazepine, indoline, iso
  • optional substituents may be substituted at 1 to 3 optional substitutable positions.
  • each substituent may be the same or different.
  • the bonding position of the nitrogen-containing heterocyclic group and L described later is not particularly limited, but in many cases, the nitrogen-containing heterocyclic group is bonded to a portion other than one hydrogen atom in the nitrogen-containing heterocyclic ring.
  • L represents a single bond or a divalent linking group.
  • the definition of the divalent linking group is as described above.
  • R represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.
  • a halogen atom an aliphatic hydrocarbon group (an alkyl group (including a cycloalkyl group), an alkenyl group (including a cycloalkenyl group and a bicycloalkenyl group), an alkynyl group), an aryl group, Heterocyclic group, cyano group, hydroxy group, nitro group, carboxyl group, alkoxy group, aryloxy group, silyloxy group, heterocyclic oxy group, acyloxy group, carbamoyloxy group, alkoxycarbonyloxy group, aryloxycarbonyloxy group, amino group (Including anilino), acylamino, aminocarbonylamino, alkoxycarbonylamino, aryloxycarbonylamino, sulfamoylamino, alkyl and arylsulfonylamino, mercapto, alkylthi
  • the substituent Q represents a halogen atom (for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom), an alkyl group [(linear, branched, cyclic, substituted or unsubstituted alkyl group.
  • a halogen atom for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom
  • an alkyl group [(linear, branched, cyclic, substituted or unsubstituted alkyl group.
  • alkyl group preferably an alkyl group having 1 to 30 carbon atoms, such as methyl, ethyl, n-propyl, isopropyl, t-butyl, n-octyl, eicosyl, 2-chloroethyl, 2-cyanoethyl, 2-ethylhexyl
  • Cycloalkyl group preferably, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, such as cyclohexyl, cyclopentyl, 4-n-dodecylcyclohexyl
  • bicycloalkyl group preferably, 5 to 30 carbon atoms
  • a substituted or unsubstituted bicycloalkyl group that is, a bicycloal having 5 to 30 carbon atoms Is a monovalent group obtained by removing one hydrogen atom from a ring, for example, bicyclo [1.2.2] heptan
  • alkenyl group [a linear, branched, cyclic substituted or unsubstituted alkenyl group is represented. They are alkenyl groups (preferably substituted or unsubstituted alkenyl groups having 2 to 30 carbon atoms, such as vinyl, allyl, prenyl, geranyl, oleyl), cycloalkenyl groups (preferably, substitution of 3 to 30 carbon atoms or An unsubstituted cycloalkenyl group, that is, a monovalent group obtained by removing one hydrogen atom of a cycloalkene having 3 to 30 carbon atoms, such as 2-cyclopenten-1-yl, 2-cyclohexen-1-yl), Bicycloalkenyl group (substituted or unsubstituted bicycloalkenyl group, preferably a substituted or unsubstituted bicycloalkenyl group having 5 to 30 carbon atoms, that is, a monovalent compound from which one hydrogen
  • alkynyl group preferably, a substituted or unsubstituted alkynyl group having 2 to 30 carbon atoms, such as ethynyl, propargyl and trimethylsilylethynyl group
  • An aryl group (preferably a substituted or unsubstituted aryl group having a carbon number of 6 to 30, such as phenyl, p-tolyl, naphthyl, m-chlorophenyl, o-hexadecanoylaminophenyl), a heterocyclic group (preferably 5 or 6)
  • Group heterocyclic group for example, 2-furanyl, 2-thienyl, 2-pyrimidinyl, 2-benzothiazolinyl),
  • amino group preferably, an amino group, a substituted or unsubstituted alkylamino group having 1 to 30 carbon atoms, a substituted or unsubstituted anilino group having 6 to 30 carbon atoms, for example, amino, methylamino, dimethylamino, anilino, N-methyl-anilino, diphenylamino
  • acylamino group preferably, formylamino group, substituted or unsubstituted alkylcarbonylamino group having 1 to 30 carbon atoms, substituted or unsubstituted arylcarbonylamino having 6 to 30 carbon atoms Groups, for example, formylamino, acetylamino, pivaloylamino, lauroylamino, benzoylamino, 3,4,5-tri-n-octyloxyphenylcarbonylamino), aminocarbonylamino group (preferably having a carbon number of 1 to 30) Or unsubsti
  • alkylthio group preferably, substituted or unsubstituted alkylthio group having 1 to 30 carbon atoms, for example, methylthio, ethylthio, n-hexadecylthio
  • arylthio group preferably, having 6 to 30 carbon atoms, substituted or unsubstituted Arylthio, for example, phenylthio, p-chlorophenylthio, m-methoxyphenylthio
  • heterocyclic thio group preferably having a carbon number of 2 to 30, substituted or unsubstituted heterocyclic thio group, for example, 2-benzothiazolylthio, 1-phenyltetrazol-5-ylthio
  • a sulfamoyl group preferably a substituted or unsubstituted sulfamoyl group having a carbon number of 0 to 30, for example, N-ethylsulfamoyl group
  • Alkyl and arylsulfonyl groups preferably, substituted or unsubstituted alkylsulfonyl groups having 1 to 30 carbon atoms, substituted or unsubstituted arylsulfonyl groups having 6 to 30 carbon atoms, for example, methylsulfonyl, ethylsulfonyl, phenylsulfonyl, p-methylphenylsulfonyl), an acyl group (preferably a formyl group, a substituted or unsubstituted alkylcarbonyl group having 2 to 30 carbon atoms, a substituted or unsubstituted arylcarbonyl group having 7 to 30 carbon atoms, 4 to 30 carbon atoms Heterocyclic carbonyl group bonded to a carbonyl group at a substituted or unsubstituted carbon atom, for example, acetyl, pivaloyl, 2-chloroacetyl
  • a carbamoyl group (preferably, a substituted or unsubstituted carbamoyl having 1 to 30 carbon atoms, for example, carbamoyl, N-methylcarbamoyl, N, N-dimethylcarbamoyl, N, N-di-n-octylcarbamoyl, N- (methyl) (Sulfonyl) carbamoyl), aryl and heterocyclic azo groups (preferably substituted or unsubstituted arylazo groups having 6 to 30 carbon atoms, substituted or unsubstituted heterocyclic azo groups having 3 to 30 carbon atoms, eg, phenylazo, p- Chlorophenylazo, 5-ethylthio-1,3,4-thiadiazol-2-ylazo), imide group (preferably, N-succinimide, N-phthalimide), phosphino group (preferably, having 2 to 30 carbon atoms, substituted or non-substi
  • a substituted or unsubstituted phosphinylamino group eg, dimethoxyphosphinylamino, dimethylaminophosphinylamino
  • a silyl group preferably, a substituted or unsubstituted silyl group having 3 to 30 carbon atoms, eg, Trimethylsilyl, t-butyldimethylsilyl, phenyldimethylsilyl And the like.
  • the content of the additive (B) is not particularly limited, but the additive (B) with respect to the content of 100 parts by mass of the conductive particles (A) is more advantageous in that the effect of the present invention is more excellent.
  • the content ratio is preferably 0.1 to 27.0 parts by mass, more preferably 1.0 to 20.0 parts by mass, and 5.0 to 18.0 parts by mass. More preferable.
  • the ratio of the content of the additive (B) to the total mass of the composition is not particularly limited, but it is 0.01 to 15% by mass with respect to the total mass of the composition because the effect of the present invention is more excellent. Is preferably 0.5 to 10.0% by mass, and more preferably 1.5 to 7.0% by mass.
  • the content of the additive (B) is the total amount of the compound represented by the general formula (I), the compound represented by the general formula (II), and the compound represented by the general formula (III) Intended.
  • the content of the compound represented by the general formula (II) and the compound represented by the general formula (III) is calculated as zero.
  • the composition of the present invention preferably contains a solvent from the viewpoint of viscosity controllability and coatability.
  • the solvent functions as a dispersion medium for the conductive particles (A).
  • the type of solvent is not particularly limited, and, for example, water, and organic solvents such as alcohols, ethers, esters and the like can be used. Among them, water is preferred.
  • the content of the solvent is not particularly limited, but is preferably 20 to 90% by mass with respect to the total mass of the composition, from the viewpoint of suppressing an increase in viscosity and being excellent in handleability.
  • the composition of the present invention may contain components other than the above components.
  • the composition of the present invention may contain a dispersant, a surfactant and the like.
  • resin for example, a thermoplastic resin, a thermosetting resin
  • Not substantially contained means that the content of the resin is 3 parts by mass or less with respect to 100 parts by mass of the conductive particles (A) in the composition, and is 1 part by mass or less Is more preferred.
  • the method for preparing the composition of the present invention is not particularly limited, and known methods can be adopted.
  • the ultrasonic method for example, treatment with an ultrasonic homogenizer
  • mixer method triple roll method
  • ball mill method etc.
  • the composition can be obtained by sales promotion by known means.
  • the conductive film obtained from the composition of the present invention exhibits excellent properties, and in particular, the composition of the present invention is useful as a composition for forming a conductive film for forming an electrode of a field effect transistor (particularly, organic thin film transistor).
  • the electrode may be any of a source electrode, a drain electrode and a gate electrode, but is particularly useful for the source electrode and the drain electrode.
  • the additive (B) contained in the composition of the present invention acts as an excellent migration inhibitor, and as a result, provides excellent insulation reliability, so that a wiring board (for example, a printed wiring board) It is also useful as a composition for forming a conductive film for forming a wire such as
  • the organic thin film transistor of the present invention is an organic thin film transistor provided with an electrode (in particular, a source electrode and a drain electrode) formed using the composition of the present invention described above.
  • FIG. 1 is a schematic cross-sectional view of one embodiment of the organic thin film transistor of the present invention.
  • the organic thin film transistor 100 includes a substrate 10, a gate electrode 20 disposed on the substrate 10, a gate insulating film 30 covering the gate electrode 20, and the gate insulating film 30 on the opposite side to the gate electrode 20 side.
  • a source electrode 40 and a drain electrode 42 in contact with the surface, an organic semiconductor layer 50 covering the surface of the gate insulating film 30 between the source electrode 40 and the drain electrode 42, and a sealing layer 60 covering each member.
  • the organic thin film transistor 100 is a bottom gate-bottom contact type organic thin film transistor.
  • FIG. 1 is a schematic cross-sectional view of one embodiment of the organic thin film transistor of the present invention.
  • the organic thin film transistor 100 includes a substrate 10, a gate electrode 20 disposed on the substrate 10, a gate insulating film 30 covering the gate electrode 20, and the gate insulating film 30 on the opposite side to the gate electrode 20 side.
  • the source electrode 40 and the drain electrode 42 are formed using the composition of this invention mentioned above, it is not limited to this aspect, The source electrode 40, the drain electrode 42, It is preferable that at least one of the gate electrodes 20 is formed using the composition of the present invention. For example, all of the gate electrode 20, the source electrode 40 and the drain electrode 42 may be formed using the composition of the present invention, or only the source electrode 40 (or the drain electrode 42) may be used. It may be formed using.
  • the substrate the gate electrode, the gate insulating film, the source electrode, the drain electrode, the organic semiconductor layer, the sealing layer, and the formation methods of each will be described in detail.
  • the substrate plays a role of supporting a gate electrode, a source electrode, a drain electrode and the like described later.
  • the type of substrate is not particularly limited, and examples thereof include plastic substrates, glass substrates, ceramic substrates, and the like. Among them, a glass substrate or a plastic substrate is preferable from the viewpoint of the applicability to each device and the cost.
  • thermosetting resin for example, epoxy resin, phenol resin, polyimide resin, polyester resin (for example, PET, PEN) etc.
  • thermoplastic resin for example, phenoxy resin, polyether sulfone, polysulfone, And polyphenylene sulfone.
  • Examples of the material of the ceramic substrate include alumina, aluminum nitride, zirconia, silicon, silicon nitride, silicon carbide and the like.
  • Examples of the material of the glass substrate include soda glass, potash glass, borosilicate glass, quartz glass, aluminum silicate glass, lead glass and the like.
  • the material of the gate electrode examples include metals such as gold (Au), silver, aluminum (Al), copper, chromium, nickel, cobalt, titanium, platinum, tantalum, magnesium, calcium, barium, sodium, etc.
  • the thickness of the gate electrode is not particularly limited, but is preferably 20 to 200 nm.
  • the method in particular of forming a gate electrode is not restrict
  • coating or printing the composition for electrode formation, etc. are mentioned.
  • patterning an electrode as a method of patterning, printing methods, such as a photolithographic method; inkjet printing, screen printing, offset printing, letterpress printing, mask vapor deposition etc. are mentioned, for example.
  • the material for the gate insulating film is polymethyl methacrylate, polystyrene, polyvinyl phenol, polyimide, polycarbonate, polyester, polyvinyl alcohol, polyvinyl acetate, polyurethane, polysulfone, polybenzoxazole, polysilsesquioxane, epoxy resin, phenol resin Etc .; oxides such as silicon dioxide, aluminum oxide and titanium oxide; and nitrides such as silicon nitride. Among these materials, in view of compatibility with the organic semiconductor layer, a polymer is preferable.
  • the material of the gate insulating film it is preferable to use a crosslinking agent (eg, melamine) in combination.
  • a crosslinking agent eg, melamine
  • the polymer is crosslinked to improve the durability of the formed gate insulating film.
  • the thickness of the gate insulating film is not particularly limited, but preferably 100 to 1000 nm.
  • the method of forming the gate insulating film is not particularly limited, for example, a method of applying a composition for forming a gate insulating film on a substrate on which a gate electrode is formed, a method of depositing or sputtering a gate insulating film material, etc.
  • the method for applying the composition for forming a gate insulating film is not particularly limited, and known methods (bar coating method, spin coating method, knife coating method, doctor blade method) can be used.
  • heating may be performed after application for the purpose of solvent removal, crosslinking, and the like.
  • the source and drain electrodes are formed using the composition of the present invention described above.
  • the channel length of the source electrode and the drain electrode is not particularly limited, but is preferably 5 to 100 ⁇ m.
  • the channel width of the source electrode and the drain electrode is not particularly limited, but preferably 50 to 500 ⁇ m.
  • This step is a step of applying the composition of the present invention described above on a substrate on which a gate electrode and a gate insulating film are formed.
  • the method for forming the coating film by applying the composition of the present invention on a substrate is not particularly limited, and any known method can be adopted.
  • double roll coater for example, double roll coater, slit coater, air knife coater, wire bar coater, slide hopper, spray coater, blade coater, doctor coater, squeeze coater, reverse roll coater, transfer roll coater, extrusion coater, curtain
  • the coating method by a coater, a dip coater, a die coater, a gravure roll, a screen printing method, a dip coating method, a spray coating method, a spin coating method, an inkjet method, etc. may be mentioned.
  • drying may be performed to remove the solvent, if necessary.
  • a conventionally known method can be used as the method of the drying treatment.
  • the heating conditions are not particularly limited, but the heating temperature is preferably 100 to 300 ° C., and the heating time is preferably 10 to 60 minutes.
  • the heating means is not particularly limited, and a known heating means such as an oven or a hot plate can be used.
  • the light source used in the light irradiation treatment is not particularly limited, and examples thereof include a mercury lamp, a metal halide lamp, a xenon (Xe) lamp, a chemical lamp and a carbon arc lamp.
  • Organic-semiconductor material which comprises an organic-semiconductor layer
  • the well-known material utilized as an organic-semiconductor layer of an organic-semiconductor transistor can be utilized.
  • pentacenes such as 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS pentacene), tetramethylpentacene, perfluoropentacene and the like, TES-ADT, diF-TES-ADT (2,8-difluoro- Anthradithiophenes such as 5,11-bis (triethylsilylethynyl) anthradithiophene), benzothienobenzothiophenes such as DPh-BTBT and Cn-BTBT, dinaphthothienothiophenes such as Cn-DNTT, perixantheno Dioxaanthanthrenes such as xanthene, fullerenes such as rubrenes, C60 and PCBM, phthalocyanines such as copper phthalocyanine and fluorinated copper phthalocyanine, polythiophenes such as P3RT, PQT,
  • the method for forming the organic semiconductor layer is not particularly limited.
  • coating the composition for organic semiconductors is the same as the method of apply
  • heating may be performed after application for the purpose of solvent removal, crosslinking, and the like.
  • the organic thin film transistor of the present invention preferably has a sealing layer as the outermost layer.
  • a well-known sealing agent can be used for a sealing layer.
  • the thickness of the sealing layer is not particularly limited, but is preferably 0.2 to 10 ⁇ m.
  • the method for forming the sealing layer is not particularly limited.
  • a composition for forming a sealing layer is applied on a substrate on which a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor layer are formed. Methods etc.
  • coating the composition for sealing layer formation is the same as the method of apply
  • heating may be performed after application for the purpose of solvent removal, crosslinking and the like.
  • FIG. 2 is a cross-sectional schematic diagram of another one aspect
  • the organic thin film transistor 200 includes a substrate 10, a gate electrode 20 disposed on the substrate 10, a gate insulating film 30 covering the gate electrode 20, and an organic semiconductor layer 50 disposed on the gate insulating film 30. And a source electrode 40 and a drain electrode 42 disposed on the organic semiconductor layer 50, and a sealing layer 60 covering each member.
  • the source electrode 40 and the drain electrode 42 are formed using the composition of the present invention described above.
  • the organic thin film transistor 200 is a top contact type organic thin film transistor.
  • the substrate, the gate electrode, the gate insulating film, the source electrode, the drain electrode, the organic semiconductor layer, and the sealing layer are as described above.
  • the composition for forming a conductive film of the present invention can also be applied to a bottom contact type organic thin film transistor and a top gate-top contact type organic thin film transistor.
  • the organic thin film transistor described above can be suitably used for electronic paper, a display device, and the like.
  • Disperbyk-190 (7.36 g) in water (1000 mL) was slowly added dropwise at room temperature.
  • the resulting suspension is passed through an ultrafiltration unit (Vivaflow 50 manufactured by Sartrius Stedim Co., molecular weight cut off: 100,000, unit number: 4) and purified until an exudate of about 5 L comes out of the ultrafiltration unit Purified by passing water.
  • the supply of purified water was stopped and concentrated to obtain 50 g of a dispersion of silver nanoparticles (silver ink A1).
  • the solid content in this silver ink A1 was 32 mass%. Further, the content of silver in the solid content was 97.0% by mass as measured by TG-DTA.
  • Examples 1 to 13 and Comparative Examples 1 to 2 When the solution a and the solution b are mixed, in addition to the solution a and the solution b, the additive (B) (migration inhibitor) shown in Table 1 is shown in Table 1 “containing the additive (B) Silver inks A2 to A16 were prepared according to the same procedure as the preparation of silver ink A1, except that they were formulated to be “amount”. The silver ink corresponds to a composition for forming a conductive film.
  • substrate. The formed silver film was etched into a comb shape of L / S 40/40 ⁇ m by photolithography to form a comb-shaped silver film (silver wiring).
  • Fotek H-7025 (manufactured by Hitachi Chemical Co., Ltd.) was used as a dry film resist, and Agrip 940 (manufactured by Meltex Co., Ltd.) was used as a silver etching solution. Furthermore, on a silver wire, Spin CTL 107 MK (manufactured by AGC) is spin-coated so that the film thickness after drying becomes 1 ⁇ m, and then dried in an oven at 140 ° C. for 20 minutes to form a sealing layer. A wiring board for evaluation of elasticity was produced.
  • the obtained wiring board was subjected to a life test (using device: EHS-221MD manufactured by ESPEC, Inc.) under the conditions of humidity 85%, temperature 85 ° C., pressure 1.0 atm, and voltage 30 V. Specifically, the above voltage was applied to the adjacent silver wires under the above environment. Then, the time until the silver wires were short-circuited by the electrochemical migration (the time T until the resistance value between the silver wires became 1 ⁇ 10 5 ⁇ ) was measured. Time T when silver ink A1 is used is T1 (reference).
  • Silver ink A1 was drawn thereon in the form of a source electrode and a drain electrode (channel length 40 ⁇ m, channel width 200 ⁇ m) using an inkjet apparatus DMP-2831 (manufactured by FUJIFILM Corporation). Then, baking was performed at 180 ° C. for 30 minutes in an oven and sintering was performed to form a source electrode and a drain electrode.
  • a toluene solution of 2,8-difluoro-5,11-bis (triethylsilylethynyl) anthradithiophene (manufactured by ALDRICH) is spin-coated thereon, baked at 140 ° C. for 15 minutes, and an organic semiconductor layer 100 nm thick Formed.
  • Cytop CTL-107MK (manufactured by AGC) is spin-coated and baked at 140 ° C. for 20 minutes to form a sealing layer (uppermost layer) having a thickness of 2 ⁇ m, thereby forming an organic thin film transistor (bottom gate-bottom contact type). ) was produced.
  • Each electrode of the obtained organic thin film transistor was connected to each terminal of a manual prober connected to a semiconductor parameter analyzer (4155C, manufactured by Agilent Technologies) to evaluate a field effect transistor (FET). Specifically, the field effect mobility ([cm 2 / V ⁇ sec]) was calculated by measuring a drain current-gate voltage (Id-Vg) characteristic. Similarly, a total of five organic thin film transistors were fabricated, and the field effect mobility was calculated. An average value of field effect mobility of five organic thin film transistors using silver ink A1 for the source electrode and the drain electrode is represented by ⁇ 1.
  • T1 life time
  • M3 1- (3-sulfopropyl) pyridinium hydroxide inner salt (made by Tokyo Kasei Co., Ltd.)
  • M8 a compound represented by the following formula (synthesized by the method described in Journal of Molecular Liquids, 2011, vol. 162, # 2, p. 95-99.
  • “Ph” represents a phenyl group Represent
  • M9 a compound represented by the following formula (synthesized by the method described in Canadian Journal of Chemistry, 1983, vol. 61, p. 235-243)
  • the content of an additive (B) in the said Table 1 intends content (mass%) of the additive (B) with respect to the composition for electrically conductive film formation.
  • the organic thin film transistors having electrodes formed using the compositions for forming a conductive film of Examples 1 to 13 containing the additive (B) have excellent high mobility (field effect mobility) And the insulation reliability can be said to be excellent from the above-mentioned insulation reliability evaluation.
  • Examples 3 to 6 when the content of the additive (B) with respect to the total mass of the composition is 1.5 to 7.0 mass, it is confirmed that the balance of the insulation reliability and the mobility is more excellent It was done. Further, from the comparison of Examples 2, 5, 8 and 10, it was confirmed that the compound represented by the general formula (III) exhibits a more excellent effect.
  • the organic thin film transistor in which the electrode was formed using the composition for forming a conductive film of Comparative Examples 1 and 2 which does not contain the predetermined additive (B) was insufficient in insulation reliability and / or mobility.
  • Substrate 20 Gate electrode 30: Gate insulating film 40: Source electrode 42: Drain electrode 50: Organic semiconductor layer 60: Sealing layer 100, 200: Organic thin film transistor

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Abstract

La présente invention concerne une composition de formation d'un film conducteur, à l'aide de laquelle on peut obtenir un transistor à couche mince organique présentant une excellente fiabilité de l'isolation et une grande mobilité ; un film conducteur dans lequel est utilisée ladite composition ; le transistor à couche mince organique mentionné ci-dessus ; un papier électronique ; un dispositif d'affichage ; et une carte câblée. Cette composition de formation d'un film conducteur comprend : des particules conductrices (A) ; et au moins un additif (B) choisi dans le groupe consistant en les composés représentés par la formule générale (I), plus précisément C+–L–SO3 –, les composés représentés par la formule générale (II) et les composés représentés par la formule générale (III), à savoir X-L-Y.
PCT/JP2014/083401 2014-01-06 2014-12-17 Composition de formation d'un film conducteur, film conducteur, transistor à couche mince organique, papier électronique, dispositif d'affichage et carte câblée WO2015102075A1 (fr)

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