WO2015098851A1 - 両面セパレータ付き封止用シート、及び、半導体装置の製造方法 - Google Patents
両面セパレータ付き封止用シート、及び、半導体装置の製造方法 Download PDFInfo
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- WO2015098851A1 WO2015098851A1 PCT/JP2014/083928 JP2014083928W WO2015098851A1 WO 2015098851 A1 WO2015098851 A1 WO 2015098851A1 JP 2014083928 W JP2014083928 W JP 2014083928W WO 2015098851 A1 WO2015098851 A1 WO 2015098851A1
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- sealing sheet
- separator
- sealing
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- 238000007789 sealing Methods 0.000 title claims abstract description 210
- 239000004065 semiconductor Substances 0.000 title claims description 111
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 238000000034 method Methods 0.000 title description 42
- 238000000926 separation method Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 description 60
- 239000003822 epoxy resin Substances 0.000 description 35
- 229920000647 polyepoxide Polymers 0.000 description 35
- 206010040844 Skin exfoliation Diseases 0.000 description 30
- 229920005989 resin Polymers 0.000 description 24
- 239000011347 resin Substances 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 239000005011 phenolic resin Substances 0.000 description 17
- 238000011156 evaluation Methods 0.000 description 15
- 239000000049 pigment Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- 239000010410 layer Substances 0.000 description 14
- 239000000975 dye Substances 0.000 description 13
- 229920003023 plastic Polymers 0.000 description 12
- 238000002834 transmittance Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 239000004033 plastic Substances 0.000 description 10
- 229920001187 thermosetting polymer Polymers 0.000 description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 239000003086 colorant Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 229920005992 thermoplastic resin Polymers 0.000 description 9
- 238000004898 kneading Methods 0.000 description 8
- 238000002156 mixing Methods 0.000 description 8
- -1 polyethylene Polymers 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000011256 inorganic filler Substances 0.000 description 7
- 229910003475 inorganic filler Inorganic materials 0.000 description 7
- 239000006087 Silane Coupling Agent Substances 0.000 description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 6
- 239000000945 filler Substances 0.000 description 6
- 239000003063 flame retardant Substances 0.000 description 6
- 239000005350 fused silica glass Substances 0.000 description 6
- 229920003986 novolac Polymers 0.000 description 6
- 239000003921 oil Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 5
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000002835 absorbance Methods 0.000 description 4
- 239000004305 biphenyl Substances 0.000 description 4
- 235000010290 biphenyl Nutrition 0.000 description 4
- 239000006229 carbon black Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000004040 coloring Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 239000006082 mold release agent Substances 0.000 description 4
- 230000009257 reactivity Effects 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- 239000004677 Nylon Substances 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- 239000005038 ethylene vinyl acetate Substances 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920001778 nylon Polymers 0.000 description 3
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 3
- 229920001707 polybutylene terephthalate Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- UHKPXKGJFOKCGG-UHFFFAOYSA-N 2-methylprop-1-ene;styrene Chemical compound CC(C)=C.C=CC1=CC=CC=C1.C=CC1=CC=CC=C1 UHKPXKGJFOKCGG-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 2
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 2
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 229910000000 metal hydroxide Inorganic materials 0.000 description 2
- 150000004692 metal hydroxides Chemical class 0.000 description 2
- GKTNLYAAZKKMTQ-UHFFFAOYSA-N n-[bis(dimethylamino)phosphinimyl]-n-methylmethanamine Chemical compound CN(C)P(=N)(N(C)C)N(C)C GKTNLYAAZKKMTQ-UHFFFAOYSA-N 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 239000013034 phenoxy resin Substances 0.000 description 2
- 229920006287 phenoxy resin Polymers 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000005060 rubber Substances 0.000 description 2
- 229920006132 styrene block copolymer Polymers 0.000 description 2
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 1
- FBMQNRKSAWNXBT-UHFFFAOYSA-N 1,4-diaminoanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C(N)=CC=C2N FBMQNRKSAWNXBT-UHFFFAOYSA-N 0.000 description 1
- NWOMMWVCNAOLOG-UHFFFAOYSA-N 1h-imidazol-5-ylmethanediol Chemical compound OC(O)C1=CN=CN1 NWOMMWVCNAOLOG-UHFFFAOYSA-N 0.000 description 1
- FWLHAQYOFMQTHQ-UHFFFAOYSA-N 2-N-[8-[[8-(4-aminoanilino)-10-phenylphenazin-10-ium-2-yl]amino]-10-phenylphenazin-10-ium-2-yl]-8-N,10-diphenylphenazin-10-ium-2,8-diamine hydroxy-oxido-dioxochromium Chemical compound O[Cr]([O-])(=O)=O.O[Cr]([O-])(=O)=O.O[Cr]([O-])(=O)=O.Nc1ccc(Nc2ccc3nc4ccc(Nc5ccc6nc7ccc(Nc8ccc9nc%10ccc(Nc%11ccccc%11)cc%10[n+](-c%10ccccc%10)c9c8)cc7[n+](-c7ccccc7)c6c5)cc4[n+](-c4ccccc4)c3c2)cc1 FWLHAQYOFMQTHQ-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- ZXTHWIZHGLNEPG-UHFFFAOYSA-N 2-phenyl-4,5-dihydro-1,3-oxazole Chemical compound O1CCN=C1C1=CC=CC=C1 ZXTHWIZHGLNEPG-UHFFFAOYSA-N 0.000 description 1
- 150000004941 2-phenylimidazoles Chemical class 0.000 description 1
- MAZRKDBLFYSUFV-UHFFFAOYSA-N 3-[(1-anilino-1,3-dioxobutan-2-yl)diazenyl]-2-hydroxy-5-nitrobenzenesulfonic acid chromium Chemical compound CC(=O)C(C(=O)NC1=CC=CC=C1)N=NC2=C(C(=CC(=C2)[N+](=O)[O-])S(=O)(=O)O)O.[Cr] MAZRKDBLFYSUFV-UHFFFAOYSA-N 0.000 description 1
- QDPSGELUBXFKSB-UHFFFAOYSA-N 4-[(4-aminophenyl)diazenyl]naphthalen-1-amine Chemical compound C1=CC(N)=CC=C1N=NC1=CC=C(N)C2=CC=CC=C12 QDPSGELUBXFKSB-UHFFFAOYSA-N 0.000 description 1
- AMPCGOAFZFKBGH-UHFFFAOYSA-N 4-[[4-(dimethylamino)phenyl]-(4-methyliminocyclohexa-2,5-dien-1-ylidene)methyl]-n,n-dimethylaniline Chemical compound C1=CC(=NC)C=CC1=C(C=1C=CC(=CC=1)N(C)C)C1=CC=C(N(C)C)C=C1 AMPCGOAFZFKBGH-UHFFFAOYSA-N 0.000 description 1
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 1
- AOMZHDJXSYHPKS-DROYEMJCSA-L Amido Black 10B Chemical compound [Na+].[Na+].[O-]S(=O)(=O)C1=CC2=CC(S([O-])(=O)=O)=C(\N=N\C=3C=CC=CC=3)C(O)=C2C(N)=C1\N=N\C1=CC=C(N(=O)=O)C=C1 AOMZHDJXSYHPKS-DROYEMJCSA-L 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- SJEYSFABYSGQBG-UHFFFAOYSA-M Patent blue Chemical compound [Na+].C1=CC(N(CC)CC)=CC=C1C(C=1C(=CC(=CC=1)S([O-])(=O)=O)S([O-])(=O)=O)=C1C=CC(=[N+](CC)CC)C=C1 SJEYSFABYSGQBG-UHFFFAOYSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- YCUVUDODLRLVIC-UHFFFAOYSA-N Sudan black B Chemical compound C1=CC(=C23)NC(C)(C)NC2=CC=CC3=C1N=NC(C1=CC=CC=C11)=CC=C1N=NC1=CC=CC=C1 YCUVUDODLRLVIC-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000006230 acetylene black Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000980 acid dye Substances 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000005250 alkyl acrylate group Chemical group 0.000 description 1
- 229920005603 alternating copolymer Polymers 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000006231 channel black Substances 0.000 description 1
- IWWWBRIIGAXLCJ-BGABXYSRSA-N chembl1185241 Chemical compound C1=2C=C(C)C(NCC)=CC=2OC2=C\C(=N/CC)C(C)=CC2=C1C1=CC=CC=C1C(=O)OCC IWWWBRIIGAXLCJ-BGABXYSRSA-N 0.000 description 1
- ALLOLPOYFRLCCX-UHFFFAOYSA-N chembl1986529 Chemical compound COC1=CC=CC=C1N=NC1=C(O)C=CC2=CC=CC=C12 ALLOLPOYFRLCCX-UHFFFAOYSA-N 0.000 description 1
- XRPLBRIHZGVJIC-UHFFFAOYSA-L chembl3182776 Chemical compound [Na+].[Na+].NC1=CC(N)=CC=C1N=NC1=CC=C(C=2C=CC(=CC=2)N=NC=2C(=CC3=CC(=C(N=NC=4C=CC=CC=4)C(O)=C3C=2N)S([O-])(=O)=O)S([O-])(=O)=O)C=C1 XRPLBRIHZGVJIC-UHFFFAOYSA-L 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- ZXJXZNDDNMQXFV-UHFFFAOYSA-M crystal violet Chemical compound [Cl-].C1=CC(N(C)C)=CC=C1[C+](C=1C=CC(=CC=1)N(C)C)C1=CC=C(N(C)C)C=C1 ZXJXZNDDNMQXFV-UHFFFAOYSA-M 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 239000000982 direct dye Substances 0.000 description 1
- 239000000986 disperse dye Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229920006242 ethylene acrylic acid copolymer Polymers 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- 229920006226 ethylene-acrylic acid Polymers 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000006232 furnace black Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 235000014413 iron hydroxide Nutrition 0.000 description 1
- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 1
- NCNCGGDMXMBVIA-UHFFFAOYSA-L iron(ii) hydroxide Chemical compound [OH-].[OH-].[Fe+2] NCNCGGDMXMBVIA-UHFFFAOYSA-L 0.000 description 1
- 229920003049 isoprene rubber Polymers 0.000 description 1
- 239000006233 lamp black Substances 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- PZNXLZZWWBSQQK-UHFFFAOYSA-N n-(5-benzamido-9,10-dioxoanthracen-1-yl)benzamide Chemical compound C=1C=CC=CC=1C(=O)NC(C=1C(=O)C2=CC=C3)=CC=CC=1C(=O)C2=C3NC(=O)C1=CC=CC=C1 PZNXLZZWWBSQQK-UHFFFAOYSA-N 0.000 description 1
- UCANIZWVDIFCHH-UHFFFAOYSA-N n-(9,10-dioxoanthracen-1-yl)-7-oxobenzo[e]perimidine-4-carboxamide Chemical compound O=C1C2=CC=CC=C2C2=NC=NC3=C2C1=CC=C3C(=O)NC1=CC=CC2=C1C(=O)C1=CC=CC=C1C2=O UCANIZWVDIFCHH-UHFFFAOYSA-N 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- FTDXCHCAMNRNNY-UHFFFAOYSA-N phenol Chemical compound OC1=CC=CC=C1.OC1=CC=CC=C1 FTDXCHCAMNRNNY-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229940110337 pigment blue 1 Drugs 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 239000000985 reactive dye Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- BQHRKYUXVHKLLZ-UHFFFAOYSA-M sodium 7-amino-2-[[4-[(4-aminophenyl)diazenyl]-2-methoxy-5-methylphenyl]diazenyl]-3-sulfonaphthalen-1-olate Chemical compound [Na+].COc1cc(N=Nc2ccc(N)cc2)c(C)cc1N=Nc1c(O)c2cc(N)ccc2cc1S([O-])(=O)=O BQHRKYUXVHKLLZ-UHFFFAOYSA-M 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 239000006234 thermal black Substances 0.000 description 1
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical compound [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 description 1
- CVNKFOIOZXAFBO-UHFFFAOYSA-J tin(4+);tetrahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[Sn+4] CVNKFOIOZXAFBO-UHFFFAOYSA-J 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- KJPJZBYFYBYKPK-UHFFFAOYSA-N vat yellow 1 Chemical compound C12=CC=CC=C2C(=O)C2=CC=C3N=C4C5=CC=CC=C5C(=O)C5=C4C4=C3C2=C1N=C4C=C5 KJPJZBYFYBYKPK-UHFFFAOYSA-N 0.000 description 1
- 239000001043 yellow dye Substances 0.000 description 1
- 239000001052 yellow pigment Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/40—Adhesives in the form of films or foils characterised by release liners
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/40—Adhesives in the form of films or foils characterised by release liners
- C09J7/401—Adhesives in the form of films or foils characterised by release liners characterised by the release coating composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/32—Holders for supporting the complete device in operation, i.e. detachable fixtures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/731—Location prior to the connecting process
- H01L2224/73101—Location prior to the connecting process on the same surface
- H01L2224/73103—Bump and layer connectors
- H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip
Definitions
- the present invention relates to a sealing sheet with a double-sided separator and a method for manufacturing a semiconductor device.
- a sealing resin for example, a sealing sheet made of a thermosetting resin is known (see, for example, Patent Document 1).
- the sealing sheet as described above is usually covered with a separator on both sides before use.
- the separator on one side is peeled off, and after passing through a predetermined process, the separator on the other side is peeled off.
- the sealing sheet may be broken when the separator is peeled off.
- This invention is made
- the objective is the sheet
- Another object of the present invention is to provide a method for manufacturing a semiconductor device using the sealing sheet with a double-sided separator.
- the present inventors diligently studied on the above problems. As a result, it has been found that if the peeling force of the two separators satisfies a specific relationship, the sealing sheet can be prevented from being broken during the peeling of the separator, and the present invention has been completed.
- the present invention is a sealing sheet with a double-sided separator, A sealing sheet; Separator A laminated on one surface of the sealing sheet; A separator B laminated on the other surface of the sealing sheet,
- the peeling force between the sealing sheet and the separator A is F1
- the peeling force between the sealing sheet and the separator B is F2
- the thickness of the sealing sheet is t
- the sealing When the area of the sheet is A, the following relationship (1) is satisfied. (1) 0 ⁇ F2 (N / 20 mm) ⁇ A (m 2 ) ⁇ t (mm) ⁇ 10.0 (provided F1 ⁇ F2 is satisfied)
- the sealing sheet is prevented from being broken when the separator B is peeled off.
- the present inventors have found that the ease of tearing of the sealing sheet is related not only to the peeling force between the separator but also the thickness and area of the sealing sheet. That is, when the separator was peeled off, the sealing sheet was found to be more easily broken as the thickness t was larger, and was more likely to be broken as the area A was larger. If the product obtained by multiplying the peeling force F2 between the separator B and the sealing sheet by the thickness t and the area A of the sealing sheet is less than 10.0, the sealing at the time of peeling the separator B is performed. It was found that tearing of the stop sheet can be suppressed.
- the present invention also provides a method for manufacturing a semiconductor device, Preparing a laminate in which a semiconductor chip is fixed on a support; and Step B for preparing the sealing sheet with a double-sided separator; Step C for peeling off the separator A from the sealing sheet with double-sided separator to obtain a sealing sheet with single-sided separator;
- the sealing sheet with a single-sided separator is placed on the side of the laminate so that the surface of the sealing sheet with the single-sided separator from which the separator B has been peeled faces the surface of the semiconductor chip of the laminated body.
- Step D for placing on a semiconductor chip; Embedding the semiconductor chip in the sealing sheet, and forming a sealing body in which the semiconductor chip is embedded in the sealing sheet; and And a step F of peeling the separator B.
- the separator A is peeled from the sealing sheet with a double-sided separator to form a sealing body, and then the separator B is peeled off. Since the sealing sheet with a double-sided separator satisfies the formula (1), tearing when the separator A and the separator B are peeled off is suppressed. Therefore, the yield of the semiconductor device manufactured using the sealing sheet with a double-sided separator can be improved.
- seat for sealing with a double-sided separator which can suppress that a tearing arises in the sheet
- An apparatus manufacturing method can be provided.
- FIG. 1 is a schematic cross-sectional view of a sealing sheet 10 with a double-sided separator according to this embodiment.
- a sealing sheet 10 with a double-sided separator includes a sealing sheet 11, a separator 16 a laminated on one surface of the sealing sheet 11, and the other surface of the sealing sheet 11. And a separator 16b laminated on the substrate.
- the separator 16a corresponds to the separator A of the present invention.
- the separator 16b corresponds to the separator B of the present invention.
- the sealing sheet 10 with a double-sided separator has F1 as the peeling force between the sealing sheet 11 and the separator 16a, F2 as the peeling force between the sealing sheet 11 and the separator 16b, and
- F1 as the peeling force between the sealing sheet 11 and the separator 16a
- F2 as the peeling force between the sealing sheet 11 and the separator 16b
- the thickness is t and the area of the sealing sheet 11 is A
- the following relationship (1) is satisfied.
- (1) 0 ⁇ F2 (N / 20 mm) ⁇ A (m 2 ) ⁇ t (mm) ⁇ 10.0 (provided F1 ⁇ F2 is satisfied)
- the sealing sheet 10 with a double-sided separator satisfies the above (1), the sealing sheet 11 is prevented from being broken when the separator 16a or the separator 16b is peeled off.
- the (1) preferably satisfies the following (1-1).
- (1-1) 1.0 ⁇ 10 ⁇ 7 ⁇ F2 (N / 20 mm) ⁇ A (m 2 ) ⁇ t (m) ⁇ 5.0
- the thickness of the separator 16a is not particularly limited, but is preferably 50 ⁇ m or more, and more preferably 75 ⁇ m or more from the viewpoint of preventing bending which is likely to occur when the area is large. Moreover, from a viewpoint of the ease of peeling of a separator, it is preferable that it is 300 micrometers or less, and it is more preferable that it is 200 micrometers or less.
- the thickness of the separator 16b is not particularly limited, but is preferably 10 ⁇ m or more and more preferably 25 ⁇ m or more from the viewpoint of handling properties when the separator is peeled off. Moreover, it is preferable that it is 200 micrometers or less from a viewpoint of the ease of peeling of a separator, and it is more preferable that it is 100 micrometers or less.
- Examples of the separator 16a and the separator 16b include a paper base such as paper; a fiber base such as cloth, nonwoven fabric, felt, and net; a metal base such as metal foil and metal plate; and a plastic base such as a plastic sheet.
- Base materials Rubber base materials such as rubber sheets; Foams such as foam sheets and laminates thereof [particularly, laminates of plastic base materials and other base materials, laminates of plastic sheets, etc.]
- An appropriate thin leaf body such as can be used.
- a plastic base material can be suitably used.
- plastic base material examples include olefin resins such as polyethylene (PE), polypropylene (PP), and ethylene-propylene copolymer; ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene- Copolymers containing ethylene as a monomer component such as (meth) acrylic acid copolymers and ethylene- (meth) acrylic acid ester (random, alternating) copolymers; polyethylene terephthalate (PET), polyethylene naphthalate (PEN), Polyester such as polybutylene terephthalate (PBT); Acrylic resin; Polyvinyl chloride (PVC); Polyurethane; Polycarbonate; Polyphenylene sulfide (PPS); Amide resin such as polyamide (nylon) and wholly aromatic polyamide (aramid); Teruketon (PEEK); polyimides; polyetherimides; polyvinylidene chloride; ABS (acrylonitrile - butadiene - stylene
- the separator 16a and the separator 16b may be subjected to a peeling treatment or may not be subjected to a release treatment within the range satisfying the above (1).
- the above (1) may be satisfied depending on the presence or absence of the release treatment.
- mold release agent used in the mold release treatment examples include a fluorine type mold release agent, a long-chain alkyl acrylate type mold release agent, and a silicone type mold release agent. Of these, silicone release agents are preferred.
- the size and shape of the sealing sheet 10 with a double-sided separator in plan view are not particularly limited, but each side has a length of 300 mm or more, or each side has a length of 500 mm or more. be able to. Moreover, it can be set as a circle whose diameter is 200 mm or more.
- the sealing sheet with a double-sided separator is particularly likely to bend when it has a large area. However, in the sealing sheet 10 with a double-sided separator according to the present embodiment, even when the area is large, when the thickness of the separator 16a is 50 ⁇ m or more, it is easy to suppress bending.
- the constituent material of the sealing sheet 11 preferably includes an epoxy resin and a phenol resin as a curing agent. Thereby, favorable thermosetting is obtained.
- the epoxy resin is not particularly limited.
- triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
- the epoxy equivalent is 150 to 250 and the softening point or the melting point is 50 to 130 ° C., solid at room temperature. From the viewpoint, triphenylmethane type epoxy resin, cresol novolac type epoxy resin, and biphenyl type epoxy resin are more preferable.
- the phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin.
- a phenol novolac resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resole resin, or the like is used.
- These phenolic resins may be used alone or in combination of two or more.
- phenol resin those having a hydroxyl equivalent weight of 70 to 250 and a softening point of 50 to 110 ° C. are preferably used from the viewpoint of reactivity with the epoxy resin, and phenol phenol is particularly preferable from the viewpoint of high curing reactivity.
- a novolac resin can be suitably used. From the viewpoint of reliability, low hygroscopic materials such as phenol aralkyl resins and biphenyl aralkyl resins can also be suitably used.
- the blending ratio of the epoxy resin and the phenol resin is blended so that the total of hydroxyl groups in the phenol resin is 0.7 to 1.5 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin from the viewpoint of curing reactivity. It is preferable to use 0.9 to 1.2 equivalents.
- the total content of the epoxy resin and the phenol resin in the sealing sheet 11 is preferably 2.5% by weight or more, and more preferably 3.0% by weight or more. Adhesive force with respect to the semiconductor chip 23, the semiconductor wafer 22, etc. is acquired favorably as it is 2.5 weight% or more.
- the total content of the epoxy resin and the phenol resin in the sealing sheet 11 is preferably 20% by weight or less, and more preferably 10% by weight or less. Hygroscopicity can be reduced as it is 20 weight% or less.
- the sealing sheet 11 may include a thermoplastic resin. Thereby, the handleability at the time of non-hardening and the low stress property of hardened
- thermoplastic resin examples include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Plastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, fluororesin, styrene-isobutylene-styrene block copolymer, etc. Is mentioned. These thermoplastic resins can be used alone or in combination of two or more. Of these, a styrene-isobutylene-styrene block copolymer is preferable from the viewpoint of low stress and low water absorption.
- the content of the thermoplastic resin in the sealing sheet 11 can be 1.5% by weight or more and 2.0% by weight or more. A softness
- the content of the thermoplastic resin in the sealing sheet 11 is preferably 6% by weight or less, and more preferably 4% by weight or less. Adhesiveness with the semiconductor chip 23 and the semiconductor wafer 22 is favorable as it is 4 weight% or less.
- the sealing sheet 11 preferably contains an inorganic filler.
- the inorganic filler is not particularly limited, and various conventionally known fillers can be used.
- quartz glass, talc, silica such as fused silica and crystalline silica
- alumina aluminum nitride
- nitriding Examples thereof include silicon and boron nitride powders. These may be used alone or in combination of two or more. Among these, silica and alumina are preferable, and silica is more preferable because the linear expansion coefficient can be satisfactorily reduced.
- silica powder is preferable, and fused silica powder is more preferable.
- fused silica powder examples include spherical fused silica powder and crushed fused silica powder. From the viewpoint of fluidity, spherical fused silica powder is preferable. Among these, those having an average particle diameter in the range of 10 to 30 ⁇ m are preferable, and those having a mean particle diameter in the range of 15 to 25 ⁇ m are more preferable.
- the average particle diameter can be derived, for example, by using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
- the content of the inorganic filler in the sealing sheet 11 is preferably 75 to 95% by weight, and more preferably 78 to 95% by weight with respect to the entire sealing sheet 11.
- the thermal expansion coefficient can be suppressed to be low, so that mechanical breakage due to thermal shock can be suppressed.
- the content of the inorganic filler is 95% by weight or less with respect to the entire sealing sheet 11, flexibility, fluidity, and adhesiveness are further improved.
- the sealing sheet 11 includes a curing accelerator.
- the curing accelerator is not particularly limited as long as it can cure the epoxy resin and the phenol resin, and examples thereof include organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate; 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole.
- organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate
- 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole.
- 2-phenyl-4,5-dihydroxymethylimidazole is preferred because the curing reaction does not proceed rapidly even when the temperature during kneading increases, and the sealing sheet 11 can be satisfactorily produced.
- the content of the curing accelerator is preferably 0.1 to 5 parts by weight with respect to 100 parts by weight of the total of the epoxy resin and the phenol resin.
- the sealing sheet 11 includes a flame retardant component.
- a flame retardant component for example, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, complex metal hydroxides; phosphazene flame retardants, etc. should be used. Can do.
- the content of the phosphorus element contained in the phosphazene flame retardant is preferably 12% by weight or more.
- the content of the flame retardant component in the sealing sheet 11 is preferably 10% by weight or more, and more preferably 15% by weight or more in the total organic components (excluding inorganic fillers). A flame retardance is favorably acquired as it is 10 weight% or more.
- the content of the thermoplastic resin in the sealing sheet 11 is preferably 30% by weight or less, and more preferably 25% by weight or less. When the content is 30% by weight or less, there is a tendency that there is little decrease in physical properties of the cured product (specifically, physical properties such as glass transition temperature and high-temperature resin strength).
- the sealing sheet 11 preferably contains a silane coupling agent.
- the silane coupling agent is not particularly limited, and examples thereof include 3-glycidoxypropyltrimethoxysilane.
- the content of the silane coupling agent in the sealing sheet 11 is preferably 0.1 to 3% by weight. When the content is 0.1% by weight or more, sufficient strength of the cured product can be obtained and the water absorption rate can be lowered. If it is 3% by weight or less, the outgas amount can be lowered.
- the sealing sheet 11 is preferably colored. Thereby, excellent marking properties and appearance can be exhibited, and a semiconductor device having an added-value appearance can be obtained. Since the colored sealing sheet 11 has excellent marking properties, it can be marked to give various information such as character information and graphic information. In particular, by controlling the coloring color, it is possible to visually recognize information (character information, graphic information, etc.) given by marking with excellent visibility. Furthermore, the sealing sheet 11 can be color-coded for each product. When the sealing sheet 11 is colored (when it is colorless and not transparent), it is not particularly limited as a color exhibited by coloring, but is preferably a dark color such as black, blue, red, etc. It is suitable that it is black.
- the dark basically, L * a * b * L * is defined by a color system, 60 or less (0 to 60) [preferably 50 or less (0 to 50), More preferably, it means a dark color of 40 or less (0 to 40)].
- L * a * b * L * defined by the color system is 35 or less (0 to 35) [preferably 30 or less (0 to 30), more preferably 25 This means a blackish color which is (0 to 25) below.
- a * and b * defined in the L * a * b * color system can be appropriately selected according to the value of L * .
- a * and b * for example, both are preferably ⁇ 10 to 10, more preferably ⁇ 5 to 5, particularly in the range of ⁇ 3 to 3 (in particular, 0 or almost 0). Is preferred.
- L * , a * , and b * defined in the L * a * b * color system are color difference meters (trade name “CR-200” manufactured by Minolta Co .; color difference meter). It is calculated
- the L * a * b * color system is a color space recommended by the International Commission on Illumination (CIE) in 1976, and is a color space called the CIE 1976 (L * a * b * ) color system. It means that.
- the L * a * b * color system is defined in JISZ 8729 in the Japanese Industrial Standard.
- the sealing sheet 11 When the sealing sheet 11 is colored, a color material (colorant) can be used according to the target color.
- the sealing sheet of the present invention may have a single layer structure or a plurality of layers, but at least a colorant is added to the side opposite to the surface facing the semiconductor wafer. It is preferable.
- the entire encapsulating sheet may contain a colorant uniformly, and the colorant is present on the side opposite to the surface facing the semiconductor wafer.
- a colorant may be contained in an unevenly distributed manner.
- the colorant may be added to the layer on the side opposite to the surface facing the semiconductor wafer, and the colorant may not be added to the other layers.
- This embodiment demonstrates the case where the sheet
- a color material various dark color materials such as a black color material, a blue color material, and a red color material can be suitably used, and a black color material is particularly suitable.
- the color material any of a pigment, a dye and the like may be used. Color materials can be used alone or in combination of two or more.
- the dye any form of dyes such as acid dyes, reactive dyes, direct dyes, disperse dyes, and cationic dyes can be used.
- the form of the pigment is not particularly limited, and can be appropriately selected from known pigments.
- the dye when a dye is used as a coloring material, the dye is dissolved or evenly dispersed in the sealing sheet 11, so that the sealing sheet 11 having a uniform or almost uniform coloring density can be easily obtained. Can be manufactured, and marking properties and appearance can be improved.
- the black color material is not particularly limited, and can be appropriately selected from, for example, inorganic black pigments and black dyes.
- a black color material a color material mixture in which a cyan color material (blue-green color material), a magenta color material (red purple color material) and a yellow color material (yellow color material) are mixed. It may be.
- Black color materials can be used alone or in combination of two or more.
- the black color material can be used in combination with a color material other than black.
- the black color material for example, carbon black (furnace black, channel black, acetylene black, thermal black, lamp black, etc.), graphite (graphite), copper oxide, manganese dioxide, azo pigment (azomethine) Azo black, etc.), aniline black, perylene black, titanium black, cyanine black, activated carbon, ferrite (nonmagnetic ferrite, magnetic ferrite, etc.), magnetite, chromium oxide, iron oxide, molybdenum disulfide, chromium complex, complex oxide black Examples thereof include dyes and anthraquinone organic black dyes.
- black color material C.I. I. Solvent Black 3, 7, 22, 27, 29, 34, 43, 70, C.I. I. Direct Black 17, 19, 19, 22, 32, 38, 51, 71, C.I. I. Acid Black 1, 2, 24, 26, 31, 48, 52, 107, 109, 110, 119, 154C.
- Black dyes such as Disperse Black 1, 3, 10, and 24;
- Black pigments such as CI Pigment Black 1 and 7 can also be used.
- Examples of such a black color material include a product name “OilOBlack BY”, a product name “OilBlack BS”, a product name “OilBlackHBB”, a product name “Oil Black803”, a product name “Oil Black860”, and a product name “Oil Black860”.
- Oil Black 5970 ”, trade name“ Oil Black 5906 ”, trade name“ Oil Black 5905 ”(manufactured by Orient Chemical Co., Ltd.) and the like are commercially available.
- color materials other than black color materials include cyan color materials, magenta color materials, and yellow color materials.
- cyan color materials include C.I. I. Solvent Blue 25, 36, 60, 70, 93, 95; I. Cyan dyes such as Acid Blue 6 and 45; I. Pigment Blue 1, 2, 3, 15, 15: 1, 15: 2, 15: 3, 15: 3, 15: 4, 15: 5, 15: 6, 16, 16, 17 17: 1, 18, 22, 25, 56, 60, 63, 65, 66; I. Bat Blue 4; 60, C.I. I. And cyan pigments such as CI Pigment Green 7.
- magenta dye examples include C.I. I. Solvent Red 1, 3, 8, 23, 24, 25, 27, 30, 30, 49, 52, 58, 63, 81, 82, 83, 84, the same 100, 109, 111, 121, 122; I. Disper thread 9; I. Solvent Violet 8, 13, 13, 21, and 27; C.I. I. Disperse violet 1; C.I. I. Basic Red 1, 2, 9, 9, 13, 14, 15, 17, 17, 18, 22, 23, 24, 27, 29, 32, 34, the same 35, 36, 37, 38, 39, 40; I. Basic Violet 1, 3, 7, 10, 14, 15, 21, 21, 25, 26, 27, 28 and the like.
- magenta pigment examples include C.I. I. Pigment Red 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 11, 12, 13, 14, 15, 16, 17, 18, 19, 21, 21, 22, 23, 30, 31, 32, 37, 38, 39, 40, 41, 42, 48: 1, 48: 2, 48: 3, 48: 4, 49, 49: 1, 50, 51, 52, 52: 2, 53: 1, 54, 55, 56, 57: 1, 58, 60, 60: 1, 63, 63: 1, 63: 2, 64, 64: 1, 67, 68, 81, 83, etc.
- yellow color materials include C.I. I. Solvent Yellow 19, 44, 77, 79, 81, 82, 93, 98, 103, 104, 112, 162 and the like yellow dyes; C.I. I. Pigment Orange 31 and 43; C.I. I.
- Various color materials such as a cyan color material, a magenta color material, and a yellow color material can be used alone or in combination of two or more.
- the mixing ratio (or blending ratio) of these color materials is not particularly limited, and each color material. It can be selected as appropriate according to the type and the target color.
- the light transmittance (visible light transmittance) of visible light (wavelength: 380 nm to 800 nm) in the sealing sheet 11 is not particularly limited, but is preferably in the range of 20% to 0%, for example. Is from 10% to 0%, particularly preferably from 5% to 0%.
- the visible light transmittance of the sealing sheet 11 is set to 20% or less, the print visibility can be improved. Further, it is possible to prevent an adverse effect on the semiconductor element due to the passage of light.
- the visible light transmittance (%) of the sealing sheet 11 is such that the sealing sheet 11 having a thickness (average thickness): 10 ⁇ m is prepared, and the sealing sheet 11 (thickness: 10 ⁇ m) Using “UV-2550” (manufactured by Shimadzu Corporation), visible light having a wavelength of 380 nm to 800 nm is irradiated with a predetermined intensity.
- the light intensity of visible light transmitted through the sealing sheet 11 by this irradiation can be measured and calculated by the following formula.
- Visible light transmittance (%) ((light intensity of visible light after transmission through sealing sheet 11) / (initial light intensity of visible light)) ⁇ 100
- the said calculation method of light transmittance (%) is applicable also to calculation of the light transmittance (%) of the sealing sheet 11 whose thickness is not 10 micrometers.
- the absorbance A 10 at 10 ⁇ m can be calculated as follows according to Lambert Beer's law.
- a 10 ⁇ ⁇ L 10 ⁇ C (1) (Where L 10 is the optical path length, ⁇ is the extinction coefficient, and C is the sample concentration) Also, the absorbance A X of a thickness X ([mu] m) can be represented by the following formula (2).
- a X ⁇ ⁇ L X ⁇ C (2)
- the absorbance A 20 at a thickness of 20 ⁇ m can be expressed by the following formula (3).
- the thickness (average thickness) of the sealing sheet when determining the light transmittance (%) of the sealing sheet is 10 ⁇ m.
- the thickness of the sealing sheet is only sealed. It is the thickness at the time of obtaining the light transmittance (%) of the stop sheet, and does not mean that the sealing sheet in the present invention is 10 ⁇ m.
- the light transmittance (%) of the sealing sheet 11 is controlled by the type and content of the resin component, the type and content of the colorant (pigment, dye, etc.), the type and content of the filler, and the like. be able to.
- the thickness of the sealing sheet 11 is not particularly limited, but is 50 ⁇ m to 2000 ⁇ m, preferably 70 ⁇ m to 1200 ⁇ m, for example, from the viewpoint of use as a sealing sheet and from the viewpoint of suitably embedding the semiconductor chip 23. More preferably, it can be set to 100 ⁇ m to 700 ⁇ m.
- the manufacturing method of the sealing sheet 11 is not particularly limited, a method of preparing a kneaded product of the resin composition for forming the sealing sheet 11 and coating the obtained kneaded product, or the obtained kneading A method of plastically processing an object into a sheet is preferable. Thereby, since the sheet
- a kneaded product is prepared by melt-kneading each component described below with a known kneader such as a mixing roll, a pressure kneader, or an extruder, and the obtained kneaded product is coated or plastically processed into a sheet. Shape.
- the temperature is preferably equal to or higher than the softening point of each component described above, for example, 30 to 150 ° C., and preferably 40 to 140 ° C., more preferably 60 to 120 in consideration of the thermosetting property of the epoxy resin. ° C.
- the time is, for example, 1 to 30 minutes, preferably 5 to 15 minutes.
- the kneading is preferably performed under reduced pressure conditions (under reduced pressure atmosphere). Thereby, while being able to deaerate, the penetration
- the pressure under reduced pressure is preferably 0.1 kg / cm 2 or less, more preferably 0.05 kg / cm 2 or less.
- the lower limit of the pressure under reduced pressure is not particularly limited, but is, for example, 1 ⁇ 10 ⁇ 4 kg / cm 2 or more.
- the kneaded material after melt-kneading is preferably applied in a high temperature state without cooling.
- the coating method is not particularly limited, and examples thereof include a bar coating method, a knife coating method, and a slot die method.
- the temperature at the time of coating is preferably not less than the softening point of each component described above, and considering the thermosetting property and moldability of the epoxy resin, for example, 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C.
- the plastic working method is not particularly limited, and examples thereof include a flat plate pressing method, a T-die extrusion method, a screw die extrusion method, a roll rolling method, a roll kneading method, an inflation extrusion method, a coextrusion method, and a calendar molding method.
- the plastic working temperature is preferably not less than the softening point of each component described above, and is 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C. in consideration of the thermosetting property and moldability of the epoxy resin. is there.
- the sealing sheet 11 can also be obtained by adjusting the varnish by dissolving and dispersing a resin or the like for forming the sealing sheet 11 in an appropriate solvent, and coating the varnish.
- the manufacturing method of the semiconductor device is as follows: Preparing a laminate in which a semiconductor chip is flip-chip bonded to a circuit forming surface of a semiconductor wafer; and Step B for preparing the sealing sheet with a double-sided separator as described above, Step C for peeling off the separator A from the sealing sheet with double-sided separator to obtain a sealing sheet with single-sided separator;
- the sealing sheet with a single-sided separator is placed on the side of the laminate so that the surface of the sealing sheet with the single-sided separator from which the separator B has been peeled faces the surface of the semiconductor chip of the laminated body.
- Step D for placing on a semiconductor chip; Embedding the semiconductor chip in the sealing sheet, and forming a sealing body in which the semiconductor chip is embedded in the sealing sheet; and And a step F for peeling the separator B. That is, in this embodiment, the case where the “laminated body in which the semiconductor chip is fixed on the support” in the present invention is “a laminated body in which the semiconductor chip is flip-chip bonded to the circuit formation surface of the semiconductor wafer” will be described. To do.
- the present embodiment is a so-called chip-on-wafer semiconductor device manufacturing method.
- FIGS. 2 to 10 are schematic cross-sectional views for explaining the method for manufacturing a semiconductor device according to this embodiment.
- a stacked body 20 in which a semiconductor chip 23 is flip-chip bonded to a circuit forming surface 22a of a semiconductor wafer 22 is prepared (step A).
- the semiconductor wafer 22 corresponds to a “support” of the present invention.
- the laminated body 20 is obtained as follows, for example.
- one or a plurality of semiconductor chips 23 having a circuit formation surface 23a and a semiconductor wafer 22 having a circuit formation surface 22a are prepared.
- the shape and size of the semiconductor wafer 22 in plan view can be the same as the size and shape of the sealing sheet 10 with a double-sided separator in plan view, for example, a diameter of 200 mm or more. Can do.
- the semiconductor chip 23 is flip-chip bonded to the circuit forming surface 22 a of the semiconductor wafer 22.
- a known device such as a flip chip bonder or a die bonder can be used.
- the bumps 23b formed on the circuit formation surface 23a of the semiconductor chip 23 and the electrodes 22b formed on the circuit formation surface 22a of the semiconductor wafer 22 are electrically connected.
- the resin sheet 24 for underfill may be affixed on the circuit formation surface 23a of the semiconductor chip 23.
- the gap between the semiconductor chip 23 and the semiconductor wafer 22 can be resin-sealed.
- a method for flip-chip bonding the semiconductor chip 23 to which the underfill resin sheet 24 is attached to the semiconductor wafer 22 is disclosed in, for example, Japanese Patent Application Laid-Open No. 2013-115186. Detailed description is omitted.
- Step of preparing a sealing sheet with a double-sided separator Moreover, in the manufacturing method of the semiconductor device which concerns on this embodiment, the sheet
- Step C [Step of peeling separator A from sealing sheet with double-sided separator]
- Step C the separator 16a is peeled from the sealing sheet with double-sided separator 10 to obtain a sealing sheet 18 with single-sided separator.
- the peeling force in the interface of the separator 16b of the sealing sheet 10 with a double-sided separator and the sealing sheet 11 is adhered with a peeling force that does not peel when the separator 16a is peeled off.
- Step D [Step of arranging a sealing sheet with a single-sided separator on the laminate]
- the laminate 20 is disposed on the lower heating plate 32 with the surface on which the semiconductor chip 23 is mounted facing upward, and the separator 16 a of the sealing sheet 18 with a single-side separator is peeled off.
- the sealing sheet 18 with a single-sided separator is disposed on the semiconductor chip 23 of the laminated body 20 so that the surface on the side facing the surface of the semiconductor chip 23 of the laminated body 20 faces (step D).
- the laminated body 20 may be first disposed on the lower heating plate 32, and then the sealing sheet 18 with a single-sided separator may be disposed on the laminated body 20, and the single-sided separator is provided on the laminated body 20.
- the sealing sheet 18 may be laminated first, and then a laminate in which the laminate 20 and the sealing sheet 18 with a single-sided separator are laminated may be disposed on the lower heating plate 32.
- Step E the semiconductor chip 23 is embedded in the embedding resin layer 14 of the sealing sheet 11 by hot pressing with the lower heating plate 32 and the upper heating plate 34, and the semiconductor chip 23 is sealed.
- the sealing body 28 embedded in the stop sheet 11 is formed (step E).
- the temperature is, for example, 40 to 100 ° C., preferably 50 to 90 ° C.
- the pressure is, for example, 0.1 to 10 MPa, preferably Is 0.5 to 8 MPa
- the time is, for example, 0.3 to 10 minutes, preferably 0.5 to 5 minutes.
- the pressure reducing conditions the pressure is, for example, 0.1 to 5 kPa, preferably 0.1 to 100 Pa, and the reduced pressure holding time (the time from the start of pressure reduction to the start of pressing) is, for example, 5 to 600 seconds. Yes, preferably 10 to 300 seconds.
- the sealing sheet 11 is thermally cured.
- the embedding resin layer 14 constituting the sealing sheet 11 is thermoset.
- the entire sealing body 28 in which the semiconductor chip 23 mounted on the semiconductor wafer 22 is embedded in the sealing sheet 11 is heated.
- the heating temperature is preferably 100 ° C or higher, more preferably 120 ° C or higher.
- the upper limit of the heating temperature is preferably 200 ° C. or lower, more preferably 180 ° C. or lower.
- the heating time is preferably 10 minutes or more, more preferably 30 minutes or more.
- the upper limit of the heating time is preferably 180 minutes or less, more preferably 120 minutes or less.
- the upper limit is preferably 10 MPa or less, more preferably 5 MPa or less.
- the sealing sheet 11 of the sealing body 28 is ground to expose the back surface 23 c of the semiconductor chip 23.
- the method for grinding the sealing sheet 11 is not particularly limited, and examples thereof include a grinding method using a grindstone that rotates at high speed.
- the surface of the semiconductor wafer 22 opposite to the side on which the semiconductor chip 23 is mounted is ground to form a via (Via) 22c (see FIG. 8), and then the wiring layer 27 having the wiring 27a. (See FIG. 9).
- the method for grinding the semiconductor wafer 22 is not particularly limited, and examples thereof include a grinding method using a grindstone that rotates at high speed.
- bumps 27b protruding from the wiring 27a may be formed.
- Conventionally known circuit board and interposer manufacturing techniques such as a semi-additive method and a subtractive method can be applied to the method of forming the wiring layer 27, and thus detailed description thereof is omitted here.
- a substrate mounting step for mounting the semiconductor device 29 on a separate substrate can be performed.
- a known device such as a flip chip bonder or a die bonder can be used.
- separator 16b is peeled. Since the sealing sheet 10 with a double-sided separator satisfies the formula (1), tearing when the separator 16a and the separator 16b are peeled is suppressed. Therefore, the yield of the semiconductor device 29 manufactured using the sealing sheet 10 with a double-sided separator can be improved.
- the separator 16a is peeled off before the thermosetting step, but the separator 16a may be peeled off after the thermosetting step.
- the semiconductor device manufacturing method according to the present invention is a so-called chip-on-wafer semiconductor device manufacturing method. That is, the case where the “laminated body in which the semiconductor chip is fixed on the support” in the present invention is “a laminated body in which the semiconductor chip is flip-chip bonded to the circuit formation surface of the semiconductor wafer” has been described.
- the method for manufacturing a semiconductor device according to the present invention is not limited to this example.
- the support of the present invention is a temporary fixing material and may be removed after the sealing body is formed.
- the present invention is not limited to the above-described embodiment, and it is sufficient that the process A, the process B, the process C, the process D, the process E, and the process F are performed. Is optional and may or may not be performed. Moreover, each process may be performed in any order within the range which is not contrary to the meaning of the present invention.
- seat for sealing in this invention is not limited to this example, Two or more layers may be used.
- Epoxy resin YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, epkin equivalent 200 g / eq. Softening point 80 ° C.)
- Phenolic resin MEH-7851-SS (phenol resin having a biphenylaralkyl skeleton, hydroxyl group equivalent 203 g / eq. Softening point 67 ° C.) manufactured by Meiwa Kasei Co., Ltd.
- Silane coupling agent KBM-403 (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd.
- Curing accelerator 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Kasei Kogyo Co., Ltd.
- Thermoplastic resin J-5800 manufactured by Mitsubishi Rayon Co., Ltd. (acrylic rubber-based stress relaxation agent)
- Filler FB-9454FC manufactured by Denki Kagaku Kogyo Co., Ltd.
- a filler was blended so as to be 88% by weight in 100% by weight of all blended components (79.5% by volume in the resin sheet).
- a silane coupling agent was blended with 100 parts by weight of the filler.
- Carbon black was blended so as to be 0.3% by weight in 100% by weight of all blended components.
- Example 1 Each component was blended according to the blending ratio described above, and melt-kneaded in a roll kneader at 60 to 120 ° C. for 10 minutes under reduced pressure conditions (0.01 kg / cm 2 ) to prepare a kneaded product. Next, the obtained kneaded material was formed into a sheet shape by a flat plate pressing method, and then cut into a predetermined size. Regarding the thickness of the sheet, 0.2 mm, 0.5 mm, 1 mm, and 2 mm were prepared.
- size size of planar view
- MRU-50 manufactured by Mitsubishi Plastics Co., Ltd. was applied to one side of each sealing sheet obtained, and TR6 manufactured by Unitika Co., Ltd. was applied to the other side.
- -75 (equivalent to separator B) was pasted. This obtained the sealing sheet with a double-sided separator for evaluation.
- Example 2 Both sides for evaluation in the same manner as in Example 1 except that MRU-50 (no mold release treatment) (equivalent to separator B) made by Mitsubishi Plastics was attached instead of TR6-75 made by Unitika Co., Ltd. A sheet for sealing with a separator was obtained.
- Example 3 A sealing sheet with a double-sided separator for evaluation was obtained in the same manner as in Example 1 except that TR1-50 (corresponding to separator B) made by Unitika Co., Ltd. was attached instead of TR6-75 made by Unitika Co., Ltd. It was.
- Example 4 A sealing sheet with a double-sided separator for evaluation was obtained in the same manner as in Example 1 except that TR1H-50 (corresponding to separator B) made by Unitika Co., Ltd. was attached instead of TR6-75 made by Unitika Co., Ltd. It was.
- Example 5 According to the blending ratio described above, an epoxy resin, a phenol resin, a thermoplastic resin, an inorganic filler, and a silane coupling agent were added to an organic solvent MEK (methyl ethyl ketone) so as to have a solid content concentration of 95% and stirred. Stirring was performed for 5 minutes at 800 rpm rotation using a rotation and revolution mixer (manufactured by Sinky Co., Ltd.). Thereafter, according to the above-mentioned blending ratio, a curing accelerator and carbon black are further added, MEK is added so that the solid content concentration becomes 90%, and the mixture is further stirred at 800 rpm for 3 minutes. Obtained.
- MEK methyl ethyl ketone
- the coating solution was applied onto MRU-50 that had been subjected to silicone release treatment, and dried at 120 ° C. for 3 minutes, thereby producing a sheet having a thickness of 100 ⁇ m. Further, a plurality of the produced sheets were bonded together at 90 ° C. with a roll laminator to obtain a predetermined thickness, and further cut into a predetermined size to obtain a sealing sheet for evaluation. Specifically, a sealing sheet for evaluation having the same size as in Example 1 was obtained. MRU-50 (equivalent to separator A) manufactured by Mitsubishi Plastics Co., Ltd. was applied to one side of each sealing sheet obtained, and TR6 manufactured by Unitika Co., Ltd. was applied to the other side. -75 (equivalent to separator B) was pasted.
- Example 6 Both sides for evaluation in the same manner as in Example 5 except that MRU-50 (no release treatment) (equivalent to separator B) made by Mitsubishi Plastics was attached instead of TR6-75 made by Unitika Ltd. A sheet for sealing with a separator was obtained.
- Example 7 A sealing sheet with a double-sided separator for evaluation was obtained in the same manner as in Example 5 except that TR1-50 (corresponding to separator B) made by Unitika Ltd. was attached instead of TR6-75 made by Unitika Ltd. It was.
- Example 8 A sealing sheet with a double-sided separator for evaluation was obtained in the same manner as in Example 5 except that TR1H-50 (corresponding to separator B) made by Unitika Ltd. was attached instead of TR6-75 made by Unitika Ltd. It was.
- Example 1 A sealing sheet with a double-sided separator for evaluation was obtained in the same manner as in Example 1 except that the thickness of the sealing sheet was 2.0 mm and the size was 10 m ⁇ 10 m.
- Example 2 A sealing sheet with a double-sided separator for evaluation was obtained in the same manner as in Example 5 except that the thickness of the sealing sheet was 2.0 mm and the size was 10 m ⁇ 10 m.
- the peeling force F1 between the sealing sheet and the silicone release-treated MRU-50 (corresponding to the separator A) was 0.016 N / 20 mm width.
- the MRU-50 (corresponding to the separator A) having been subjected to the silicone release treatment is first peeled off from the sealing sheet with a double-sided separator for evaluation produced in Examples 1 to 8 and Comparative Examples 1 and 2, and then the peeling force Each different separator (equivalent to separator B) was peeled off. As a result, the evaluation was made as “A” when no cracking or tearing occurred in the sealing sheet, and “C” when at least one of cracking or tearing occurred. The results are shown in Tables 4-6.
- Sealing sheet with double-sided separator 11 Sealing sheet 18 Sealing sheet with single-sided separator 16a Separator (Separator A) 16b Separator (Separator B) 20, 50 Laminated body 22 Semiconductor wafer 23 Semiconductor chip 28 Sealing body 29 Semiconductor device
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Abstract
Description
封止用シートと、
前記封止用シートの一方の面に積層されたセパレータAと、
前記封止用シートの他方の面に積層されたセパレータBと
を備え、
前記封止用シートと前記セパレータAとの間の剥離力をF1、前記封止用シートと前記セパレータBとの間の剥離力をF2、前記封止用シートの厚みをt、前記封止用シートの面積をAとしたときに、下記(1)の関係を満たすことを特徴とする。
(1) 0<F2(N/20mm)×A(m2)×t(mm)<10.0(ただし、F1<F2を満たす。)
半導体チップが支持体上に固定された積層体を準備する工程Aと、
前記両面セパレータ付き封止用シートを準備する工程Bと、
前記両面セパレータ付き封止用シートから前記セパレータAを剥離して片面セパレータ付き封止用シートを得る工程Cと、
前記片面セパレータ付き封止用シートの前記セパレータBを剥離した側の面と前記積層体の前記半導体チップの面とが対向するように、前記片面セパレータ付き封止用シートを、前記積層体の前記半導体チップ上に配置する工程Dと、
前記半導体チップを前記封止用シートに埋め込み、前記半導体チップが前記封止用シートに埋め込まれた封止体を形成する工程Eと、
前記セパレータBを剥離する工程Fとを有することを特徴とする。
図1は、本実施形態に係る両面セパレータ付き封止用シート10の断面模式図である。図1に示すように、両面セパレータ付き封止用シート10は、封止用シート11と、封止用シート11の一方の面に積層されたセパレータ16aと、封止用シート11の他方の面に積層されたセパレータ16bとを備える。セパレータ16aは、本発明のセパレータAに相当する。また、セパレータ16bは、本発明のセパレータBに相当する。
(1) 0<F2(N/20mm)×A(m2)×t(mm)<10.0(ただし、F1<F2を満たす。)
(1-1)1.0×10-7<F2(N/20mm)×A(m2)×t(m)<5.0
封止用シート11の構成材料は、エポキシ樹脂、及び、硬化剤としてのフェノール樹脂を含むことが好ましい。これにより、良好な熱硬化性が得られる。
なお、平均粒径は、例えば、母集団から任意に抽出される試料を用い、レーザー回折散乱式粒度分布測定装置を用いて測定することにより導き出すことができる。
可視光線透過率(%)=((封止用シート11の透過後の可視光線の光強度)/(可視光線の初期の光強度))×100
(式中、L10は光路長、αは吸光係数、Cは試料濃度を表す)
また、厚さX(μm)での吸光度AXは下記式(2)により表すことができる。
AX=α×LX×C (2)
更に、厚さ20μmでの吸光度A20は下記式(3)により表すことができる。
A10=-log10T10 (3)
(式中、T10は厚さ10μmでの光線透過率を表す)
前記式(1)~(3)より、吸光度AXは、
AX=A10×(LX/L10)
=-[log10(T10)]×(LX/L10)
と表すことができる。これにより、厚さX(μm)での光線透過率TX(%)は、下記により算出することができる。
TX=10-AX
但し、AX=-[log10(T10)]×(LX/L10)
半導体チップが半導体ウエハの回路形成面にフリップチップボンディングされた積層体を準備する工程Aと、
前記に記載の両面セパレータ付き封止用シートを準備する工程Bと、
前記両面セパレータ付き封止用シートから前記セパレータAを剥離して片面セパレータ付き封止用シートを得る工程Cと、
前記片面セパレータ付き封止用シートの前記セパレータBを剥離した側の面と前記積層体の前記半導体チップの面とが対向するように、前記片面セパレータ付き封止用シートを、前記積層体の前記半導体チップ上に配置する工程Dと、
前記半導体チップを前記封止用シートに埋め込み、前記半導体チップが前記封止用シートに埋め込まれた封止体を形成する工程Eと、
前記セパレータBを剥離する工程Fとを少なくとも有する。
すなわち、本実施形態では、本発明における「半導体チップが支持体上に固定された積層体」が、「半導体チップが半導体ウエハの回路形成面にフリップチップボンディングされた積層体」である場合について説明する。本実施形態は、いわゆる、チップオンウエハ方式の半導体装置の製造方法である。
本実施形態に係る半導体装置の製造方法では、まず、半導体チップ23が半導体ウエハ22の回路形成面22aにフリップチップボンディングされた積層体20を準備する(工程A)。第1実施形態において、半導体ウエハ22は、本発明の「支持体」に相当する。積層体20は、例えば、以下のようにして得られる。
また、本実施形態に係る半導体装置の製造方法では、両面セパレータ付き封止用シート10(図1参照)を準備する(工程B)。
工程Bの後、図4に示すように、両面セパレータ付き封止用シート10からセパレータ16aを剥離して片面セパレータ付き封止用シート18を得る(工程C)。なお、両面セパレータ付き封止用シート10のセパレータ16bと封止用シート11との界面での剥離力は、セパレータ16aの剥離の際に剥離しない程度の剥離力で貼り付いている。
次に、図4に示すように、下側加熱板32上に積層体20を半導体チップ23が実装された面を上にして配置するとともに、片面セパレータ付き封止用シート18のセパレータ16aを剥離した側の面と積層体20の半導体チップ23の面とが対向するように、片面セパレータ付き封止用シート18を、積層体20の半導体チップ23上に配置する(工程D)。
この工程においては、下側加熱板32上にまず積層体20を配置し、その後、積層体20上に片面セパレータ付き封止用シート18を配置してもよく、積層体20上に片面セパレータ付き封止用シート18を先に積層し、その後、積層体20と片面セパレータ付き封止用シート18とが積層された積層物を下側加熱板32上に配置してもよい。
次に、図5に示すように、下側加熱板32と上側加熱板34とにより熱プレスして、半導体チップ23を封止用シート11の埋め込み用樹脂層14に埋め込み、半導体チップ23が封止用シート11に埋め込まれた封止体28を形成する(工程E)。
前記減圧条件としては、圧力が、例えば、0.1~5kPa、好ましくは、0.1~100Paであり、減圧保持時間(減圧開始からプレス開始までの時間)が、例えば、5~600秒であり、好ましくは、10~300秒である。
次に、図6に示すように、セパレータ16bを剥離する(工程F)。
次に、封止用シート11を熱硬化させる。特に、封止用シート11を構成する埋め込み用樹脂層14を熱硬化させる。具体的には、例えば、半導体ウエハ22上に実装されている半導体チップ23が封止用シート11に埋め込まれた封止体28全体を加熱する。
次に、図7に示すように、封止体28の封止用シート11を研削して半導体チップ23の裏面23cを表出させる。封止用シート11を研削する方法としては、特に限定されず、例えば、高速回転する砥石を用いるグラインディング法を挙げることができる。
次に、半導体ウエハ22における、半導体チップ23が搭載されている側とは反対側の面を研削して、ビア(Via)22cを形成した後(図8参照)、配線27aを有する配線層27を形成する(図9参照)。半導体ウエハ22を研削する方法としては、特に限定されず、例えば、高速回転する砥石を用いるグラインディング法を挙げることができる。配線層27には、配線27aから突出したバンプ27bを形成してもよい。配線層27を形成する方法には、セミアディティブ法や、サブトラクティブ法など、従来公知の回路基板やインターポーザの製造技術を適用することができるから、ここでの詳細な説明は省略する。
続いて、図10に示すように、半導体チップ23の裏面23cが表出している封止体28をダイシングする。これにより、半導体チップ23単位での半導体装置29を得ることができる。
必要に応じて、半導体装置29を別途の基板(図示せず)に実装する基板実装工程を行うことができる。半導体装置29の前記別途の基板への実装には、フリップチップボンダーやダイボンダーなどの公知の装置を用いることができる。
しかしながら、本発明に係る半導体装置の製造方法は、この例に限定されない。本発明の支持体は、仮固定材であり、封止体形成後に取り除かれるものであってもよい。
実施例、比較例で使用した成分、及び、配合比について説明する。
<成分>
エポキシ樹脂:新日鐵化学(株)製のYSLV-80XY(ビスフェノールF型エポキシ樹脂、エポキン当量200g/eq.軟化点80℃)
フェノール樹脂:明和化成社製のMEH-7851-SS(ビフェニルアラルキル骨格を有するフェノール樹脂、水酸基当量203g/eq.軟化点67℃)
シランカップリング剤:信越化学社製のKBM-403(3-グリシドキシプロピルトリメトキシシラン)
硬化促進剤:四国化成工業社製の2PHZ-PW(2-フェニル-4,5-ジヒドロキシメチルイミダゾール)
熱可塑性樹脂:三菱レイヨン株式会社製のJ-5800(アクリルゴム系応力緩和剤)
フィラー:電気化学工業社製のFB-9454FC(溶融球状シリカ粉末、平均粒子径17.6μm)
カーボンブラック:三菱化学社製の#20(粒子径50nm)
<配合比>
(1)エポキシ樹脂中のエポキシ基1当量に対して、フェノール樹脂中の水酸基が1当量となるように配合した(全配合成分100重量%中、エポキシ樹脂及びフェノール樹脂の合計量:9.3重量%)。
(2)エポキシ樹脂及びフェノール樹脂の合計100重量部に対して1.0重量部となるように硬化促進剤を配合した。
(3)有機成分(フィラーを除く全成分)100重量%中、30重量%となるように熱可塑性樹脂を配合した。
(4)全配合成分100重量%中、88重量%となるようにフィラーを配合した(樹脂シート中、79.5体積%)。
(5)フィラー100重量部に対して、0.1重量部のシランカップリング剤を配合した。
(6)全配合成分100重量%中、0.3重量%となるようにカーボンブラックを配合した。
上記記載の配合比に従い、各成分を配合し、ロール混練機により60~120℃、10分間、減圧条件下(0.01kg/cm2)で溶融混練し、混練物を調製した。次いで、得られた混練物を、平板プレス法により、シート状に形成した後、所定の大きさにカットした。シートの厚さについては、0.2mm、0.5mm、1mm、2mmのものを作成した。また、各厚さのシートについて、大きさ(平面視の大きさ)を、1cm×1cm、10cm×10cm、30cm×30cm、1m×1mにカットし、評価用の封止用シートを得た。得られた各封止用シートの一方の面に、三菱樹脂株式会社製のシリコーン離形処理済みMRU-50(セパレータAに相当)を貼り付け、もう一方の面に、ユニチカ株式会社製のTR6-75(セパレータBに相当)を貼り付けた。これにより、評価用の両面セパレータ付き封止用シートを得た。
ユニチカ株式会社製のTR6-75の代わりに、三菱樹脂株式会社製のMRU-50(離型処理なし)(セパレータBに相当)を貼り付けたこと以外は実施例1と同様に評価用の両面セパレータ付き封止用シートを得た。
ユニチカ株式会社製のTR6-75の代わりに、ユニチカ株式会社製のTR1-50(セパレータBに相当)を張り付けたこと以外は実施例1と同様に評価用の両面セパレータ付き封止用シートを得た。
ユニチカ株式会社製のTR6-75の代わりに、ユニチカ株式会社製のTR1H-50(セパレータBに相当)を張り付けたこと以外は実施例1と同様に評価用の両面セパレータ付き封止用シートを得た。
上記記載の配合比に従い、エポキシ樹脂とフェノール樹脂と熱可塑性樹脂と無機充填剤とシランカップリング剤を固形分濃度が95%となるように有機溶剤MEK(メチルエチルケトン)中に添加し、攪拌した。攪拌は、自転公転ミキサー(株式会社シンキー製)を用い、800rpm回転にて、5分間行なった。その後、上記記載の配合比に従い、さらに硬化促進剤とカーボンブラックとを添加し、固形分濃度が90%となるようにMEKを添加し、さらに800rpmにて3分間撹拌して、塗工液を得た。
その後、塗工液を、シリコーン離型処理済みのMRU-50上に塗布し、120℃3分間、乾燥させることにより、厚さ100μmのシートを作製した。さらに作製したシート複数枚をロールラミネーターにて、90℃で貼り合わせて所定の厚みとし、さらに、所定の大きさにカットし、評価用の封止用シートを得た。具体的には、実施例1と同様のサイズの評価用の封止用シートを得た。得られた各封止用シートの一方の面に、三菱樹脂株式会社製のシリコーン離形処理済みMRU-50(セパレータAに相当)を貼り付け、もう一方の面に、ユニチカ株式会社製のTR6-75(セパレータBに相当)を貼り付けた。
ユニチカ株式会社製のTR6-75の代わりに、三菱樹脂株式会社製のMRU-50(離型処理なし)(セパレータBに相当)を貼り付けたこと以外は実施例5と同様に評価用の両面セパレータ付き封止用シートを得た。
ユニチカ株式会社製のTR6-75の代わりに、ユニチカ株式会社製のTR1-50(セパレータBに相当)を張り付けたこと以外は実施例5と同様に評価用の両面セパレータ付き封止用シートを得た。
ユニチカ株式会社製のTR6-75の代わりに、ユニチカ株式会社製のTR1H-50(セパレータBに相当)を張り付けたこと以外は実施例5と同様に評価用の両面セパレータ付き封止用シートを得た。
封止用シートの厚みを2.0mm、大きさを10m×10mとしたこと以外は実施例1と同様に評価用の両面セパレータ付き封止用シートを得た。
封止用シートの厚みを2.0mm、大きさを10m×10mとしたこと以外は実施例5と同様に評価用の両面セパレータ付き封止用シートを得た。
両面セパレータ付き封止用シートから、セパレータ(セパレータBに相当するもの)を引き剥がし、封止用シートとセパレータ(セパレータB)との間の剥離力F2を測定した。
具体的には、下記条件にて引き剥がしを行い、その際の荷重の最大荷重(測定初期のピークトップを除いた荷重の最大値)を測定し、この最大荷重を樹脂シートとセパレータ間の剥離力(N/20mm幅)として求めた。その後、F2(N/20mm)×A(m2)×t(mm)を算出した。結果を表1~表3に示す。
なお、封止用シートと、シリコーン離形処理済みMRU-50(セパレータAに相当)との間の剥離力F1は、0.016N/20mm幅であった。
(剥離力の測定条件)
使用装置:オートグラフAGS-J(島津製作所社製)
温度:23℃
剥離角度:180°
引張速度:300mm/min
実施例1~8、比較例1~2によって作製した評価用の両面セパレータ付き封止用シートから、シリコーン離形処理済みMRU-50(セパレータAに相当)を先に剥がし、次に剥離力の異なる各々のセパレータ(セパレータBに相当)を剥離した。その結果、封止用シートに割れや破れが生じていないものを○、割れや破れの少なくともいずれかが生じていれば×として評価を行った。結果を表4~表6に示す。
11 封止用シート
18 片面セパレータ付き封止用シート
16a セパレータ(セパレータA)
16b セパレータ(セパレータB)
20、50 積層体
22 半導体ウエハ
23 半導体チップ
28 封止体
29 半導体装置
Claims (2)
- 封止用シートと、
前記封止用シートの一方の面に積層されたセパレータAと、
前記封止用シートの他方の面に積層されたセパレータBと
を備え、
前記封止用シートと前記セパレータAとの間の剥離力をF1、前記封止用シートと前記セパレータBとの間の剥離力をF2、前記封止用シートの厚みをt、前記封止用シートの面積をAとしたときに、下記(1)の関係を満たすことを特徴とする両面セパレータ付き封止用シート。
(1) 0<F2(N/20mm)×A(m2)×t(mm)<10.0(ただし、F1<F2を満たす。) - 半導体チップが支持体上に固定された積層体を準備する工程Aと、
請求項1に記載の両面セパレータ付き封止用シートを準備する工程Bと、
前記両面セパレータ付き封止用シートから前記セパレータAを剥離して片面セパレータ付き封止用シートを得る工程Cと、
前記片面セパレータ付き封止用シートの前記セパレータBを剥離した側の面と前記積層体の前記半導体チップの面とが対向するように、前記片面セパレータ付き封止用シートを、前記積層体の前記半導体チップ上に配置する工程Dと、
前記半導体チップを前記封止用シートに埋め込み、前記半導体チップが前記封止用シートに埋め込まれた封止体を形成する工程Eと、
前記セパレータBを剥離する工程Fとを有することを特徴とする半導体装置の製造方法。
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