WO2015096369A1 - 阵列基板及其制造方法、显示装置 - Google Patents

阵列基板及其制造方法、显示装置 Download PDF

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WO2015096369A1
WO2015096369A1 PCT/CN2014/078267 CN2014078267W WO2015096369A1 WO 2015096369 A1 WO2015096369 A1 WO 2015096369A1 CN 2014078267 W CN2014078267 W CN 2014078267W WO 2015096369 A1 WO2015096369 A1 WO 2015096369A1
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Prior art keywords
gate
insulating layer
layer
line
array substrate
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PCT/CN2014/078267
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English (en)
French (fr)
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金熙哲
宋泳锡
刘圣烈
崔承镇
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京东方科技集团股份有限公司
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Priority to US14/424,717 priority Critical patent/US9893090B2/en
Publication of WO2015096369A1 publication Critical patent/WO2015096369A1/zh

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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1343—Electrodes
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

Definitions

  • Embodiments of the present invention relate to an array substrate, a method of fabricating the same, and a display device.
  • TFT-LCD Thin Film Transistor Liquid Crystal Display, film
  • TFT-LCD Thin Film Transistor Liquid Crystal Display, film
  • Transparent metal oxide materials such as indium tin oxide (ITO)
  • ITO indium tin oxide
  • Source drain and data line Such a cross-sectional structure of the array substrate along the data line direction can As shown in FIG. 1, the gate line 11 (including the gate of the TFT) and the gate insulating layer 12 are sequentially formed.
  • a data line 13 is formed on the surface of the gate insulating layer 12, the data line 13 is made of ITO material, and the surface of the data line 13 is sequentially formed with an etch barrier layer 14 And a transparent electrode 15.
  • the data line 13 and the transparent electrode 15 have a longer section of overlap, so that in the case of power up, due to the level difference, A parasitic capacitance Cdc is generated between the data line 14 and the transparent electrode 15.
  • Input on data line 14 At the moment of the voltage signal, the voltage signal on the data line 14 is high due to the existence of parasitic capacitance.
  • a low change causes the transparent electrode 15 to undergo a voltage change correspondingly, thereby causing application to the image
  • the voltage on the liquid crystal changes in the prime causing the display to flicker and the data line is delayed. And power consumption will also increase.
  • an array substrate comprises: on a transparent base A plurality of gate lines and data lines arranged horizontally and vertically on the board.
  • the data line is formed in the same layer as the gate line
  • the surface of the transparent substrate, the data line is disconnected in the gate line region.
  • the area of the gate line a connection pattern, the connection pattern is insulated from the gate line, and the data is located on both sides of the gate line
  • the wires are electrically connected by the connection pattern.
  • a display device includes as described above Array substrate.
  • a method of fabricating an array substrate includes: Forming gate lines and data lines on the surface of the transparent substrate in the same layer, and the data lines are disconnected in the gate line region; Forming a connection pattern corresponding to the gate line region on the substrate having the gate line and the data line, the connection The connection pattern is insulated from the gate line, and the data lines on both sides of the gate line pass through the connection pattern Electrical connection.
  • FIG. 1 is a schematic structural view of an array substrate according to a technique
  • FIG. 2 is a schematic structural diagram of an array substrate according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of another array substrate according to an embodiment of the present invention.
  • FIG. 4 is a partial plan view of a substrate after forming an insulating layer pattern and a cross-sectional view taken along line A-A thereof;
  • FIG. 5 is a partial plan view of a substrate after forming a gate line, a data line, and a gate of a TFT; B-B cross-sectional view;
  • FIG. 6 is a schematic structural view of a substrate after forming an insulating material layer
  • FIG. 7 is a schematic structural view of a substrate after forming a first insulating layer
  • FIG. 8 is a schematic structural view of a substrate after forming a gate insulating layer
  • FIG. 9 is a partial plan view of a substrate after forming an active layer, and a cross-sectional view taken along line C-C thereof;
  • FIG. 10 is a schematic structural view of a substrate after forming an etch barrier layer
  • 11 is a partial plan view of a substrate after forming a via hole, and a cross-sectional view taken along line D-D thereof;
  • FIG. 12 is a partial plan view of a substrate after forming a connection pattern and a source/drain of a TFT, and an E-E thereof Cross-sectional view;
  • Figure 13 is a partial plan view of the substrate after forming the first transparent electrode and its F-F cross-sectional view
  • FIG. 14 is a schematic structural view of a substrate after forming a passivation layer
  • 15 is a partial plan view of a substrate after forming a second transparent electrode.
  • the array substrate provided by the embodiment of the present invention includes: The gate line 21 and the data line 22, the data line 22 is disposed in the same layer as the gate line 21, and the data line 22 is on the gate line The 21 area is disconnected.
  • the array substrate further includes a first transparent electrode 241 at least part of the data line and A first insulating layer 26, a gate insulating layer 27, and an etch barrier are disposed between the first transparent electrodes 241 Layer 23.
  • the gate line 21 and the data line 22 may be formed of the same metal layer by one patterning process. It is formed on the surface of the transparent substrate 20.
  • the gate line 21 region has a connection pattern 25, and the connection pattern 25 and the gate line 21 are absolutely
  • the data lines 22 located on both sides of the gate line 21 are electrically connected by the connection pattern 25.
  • the data lines are formed in the same layer as the gate lines, and the data lines are The gate line region is disconnected, and the disconnected data lines are electrically connected by a connection pattern disposed in the gate line region.
  • the data line and the transparent can be significantly increased on the basis of ensuring the quality of the gate line and the data line.
  • the spacing between the electrodes thereby effectively reducing the parasitic capacitance Cdc between the data line and the transparent electrode,
  • the output jump voltage caused by excessive parasitic capacitance is prevented from being bad, and the display screen is effectively improved. Flashing, reducing data line delay and power consumption, and improving the quality of the display device.
  • the first insulating layer 26 covers the gate line 21 and the data line 22 is located at the gate. Other parts than the ends on either side of the line. The ends of the data lines 22 on both sides of the gate line 21 are exposed at The surface of the first insulating layer 26. In the area of the gate line 21, the connection pattern 25 is formed on the first insulating layer The surface of 26.
  • the surface of the edge layer 26 may be formed on the surface of the transparent substrate 20 by a patterning process in advance. a height of the insulating layer pattern 261, the insulating layer pattern 261 may be located on both sides of the gate line 21 to be formed According to the area of the line. Further forming gate lines 21 and numbers on the surface of the substrate on which the insulating layer pattern 261 is formed According to the line 22, the ends of the data lines 22 on both sides of the gate line 21 are covered in the insulating layer pattern 261. surface. Then, the insulating layer material is deposited to expose at least the data lines on the surface of the insulating layer pattern 261, Thereby, the first insulating layer 26 is finally formed.
  • the first insulating layer 26 may be formed by other processes, which is not limited in the present invention.
  • the data line 22 and the first transparent electrode The pitch D' between 241 is much larger than the pitch D between the data line 13 and the transparent electrode 15 in Fig. 1.
  • the array substrate may further include a TFT, a gate of the TFT (not shown in the figure) Shown in the same layer as the gate line 21.
  • the gate portion of the TFT is exposed on the surface of the first insulating layer 26.
  • it may be on both sides of the gate line 21.
  • the region where the data line is to be formed forms the insulating layer pattern 261, and is formed in the channel region of the TFT. There is a certain height of the insulating layer pattern 261.
  • a gate electrode is formed while forming a data line and a gate line. then, Depositing an insulating layer material to form a first insulating layer 26 and exposing a gate portion of the TFT to the first insulating layer The surface of layer 26.
  • the gate of the TFT can be raised to make the channel region of the TFT
  • the array substrate may further include the gate electrode sequentially formed on the gate surface of the TFT The edge layer 27 and the active layer (not shown in Fig. 2).
  • the active layer may be made of a transparent metal oxide material having semiconductor characteristics.
  • metal The oxide material may include: IGZO (indium gallium zinc oxide), IGO (indium gallium oxide), ITZO At least one of (indium tin zinc oxide) and AlZnO (aluminum zinc oxide).
  • IGZO indium gallium zinc oxide
  • IGO indium gallium oxide
  • ITZO At least one of (indium tin zinc oxide) and AlZnO (aluminum zinc oxide).
  • the active layer of the TFT has the advantages of low preparation temperature requirement and high mobility, and the technology can be applied to High-frequency display and high-resolution display products with equipment investment costs relative to LTPS TFT technology Low, low operating support costs and so on.
  • a gate insulating layer 27 is formed on the surface of the first insulating layer 26.
  • An etch barrier layer 23 is formed on the surface of the gate insulating layer 27.
  • a via penetrates through the etch barrier layer 23 and the gate insulating layer 27 to expose the via hole
  • connection pattern 25 can be further formed by the patterning process in the region of the via hole. This can effectively define the coverage area of the connection pattern 25.
  • An array substrate having such a structure Since the first line having a certain thickness is further added between the data line 22 and the first transparent electrode 241 The insulating layer 26 and the gate insulating layer 27, so that the data line 22 and the first transparent electrode can be further enlarged The spacing between 241 reduces the parasitic capacitance existing between the data line 22 and the first transparent electrode 241 Cdc.
  • the structure of the array substrate provided by the embodiment of the present invention may also be as shown in FIG. 3, including:
  • the first insulating layer 262 covers the gate line 21 and the data line 22.
  • In the gate line 21 area a region in which the connection pattern 25 is formed on the surface of the first insulating layer 262, and the connection pattern 25 passes through
  • the via holes of an insulating layer 262 are electrically connected to the ends of the data lines 22 on both sides of the gate lines 21, respectively.
  • the rest of the structure can refer to the array substrate shown in FIG.
  • the difference from the array substrate shown in FIG. 2 is that the array substrate shown in FIG. 3 does not need to be in advance.
  • the surface of the substrate is formed with the insulating layer pattern 261, so that the array substrate can be simplified to some extent. Production process to reduce production difficulty.
  • the first insulating layer 26 shown in FIG. 2 and the first insulating layer shown in FIG. 262 can be made of a material such as an organic resin material having good insulating properties, and the present invention No restrictions.
  • the TFT-LCD array substrate provided by the embodiment of the present invention can be applied to FFS.
  • FFS Flexible Field Switching
  • AD-SDS Advanced-Super Dimensional Switching, referred to as ADS
  • ADS advanced super-dimensional field switch type
  • IPS In Plane
  • TN Transverse electric field effect type
  • TN Transverse electric field effect type
  • the electric field and the longitudinal electric field generated between the pixel electrode layer and the common electrode layer form a multi-dimensional electric field, so that the liquid crystal All the aligned liquid crystal molecules between the pixel electrodes in the box and directly above the electrodes can generate a rotation conversion, thereby The planar orientation system liquid crystal working efficiency is improved and the light transmission efficiency is increased.
  • the counter substrate and the array substrate which are formed into a box are included.
  • the common electrode of the TN type display device is disposed on the opposite substrate, and the pixel electrode is disposed in the array.
  • public power of the FFS type display device, the ADS type display device, and the IPS type display device Both the pole and the pixel electrode are disposed on the array substrate.
  • the array substrate may further include: a passivation layer 28 formed on the surface of the first transparent electrode 241, The passivation layer 28 covers the connection pattern 25 located in the area of the gate line 21; and is formed on the surface of the passivation layer The second transparent electrode 242.
  • the first transparent electrode 241 may be a pixel electrode, and the second transparent electrode 242 may be a common electrode.
  • the first transparent electrode 241 can be a plate-like structure, and the second transparent electrode 242 can include multiple Bar electrodes arranged in a row.
  • the common electrode and the pixel electrode are different Layer setting, optionally, the electrode on the upper layer contains a plurality of strip electrodes, and the electrodes on the lower layer may Contains multiple strip electrodes or is flat.
  • the electrode located in the lower layer is The shape of the flat plate is taken as an example.
  • the different layer settings are for at least two patterns, at least two patterns
  • the heterogeneous layer setting means that at least two layers of the film are respectively formed into at least two patterns by a patterning process. Correct The arrangement of the two patterns in different layers means that a pattern is formed by each of the two films by a patterning process.
  • the lower electrode is formed by the second layer of the transparent conductive film
  • the upper electrode is formed by a patterning process, wherein
  • the lower electrode is a common electrode (or a pixel electrode), and the upper electrode is a pixel electrode (or a common electrode).
  • the array substrate provided by the embodiment of the invention can also be applied to an IPS type display device, and FFS
  • the type display device is different in that the common electrode and the pixel electrode are disposed in the same layer, and the public power
  • the pole includes a plurality of first strip electrodes, the pixel electrodes including a plurality of second strip electrodes, the first The strip electrode and the second strip electrode are spaced apart.
  • the same layer setting is for at least two patterns
  • At least two patterns in the same layer arrangement mean that at least two patterns are formed by the same film through a patterning process case.
  • the same layer arrangement of the common electrode and the pixel electrode means: by the same transparent conductive film
  • the pattern process forms a pixel electrode and a common electrode.
  • the pixel electrode refers to a switch unit (for example, Is a thin film transistor) electrically connected to the data line, the common electrode is electrically connected to the common electrode line Electrode.
  • Embodiments of the present invention also provide a display device including the array base as described above. board.
  • the array substrate includes a plurality of gate lines 21 and data lines 22 disposed transversely and vertically, and the data lines 22 and The gate lines 21 are disposed in the same layer, and the data lines 22 are disconnected in the area of the gate lines 21.
  • the array substrate further includes a transparent electrode 241, disposed between at least a portion of the data line and the first transparent electrode 241
  • An insulating layer 26 (or first insulating layer 262), a gate insulating layer 27, and an etch stop layer 23.
  • the display device may be: a liquid crystal panel, an electronic paper, an OLED panel, a liquid crystal television, or a liquid Any product or component with display function, such as crystal display, digital photo frame, mobile phone, tablet computer, etc.
  • a display device provided by an embodiment of the invention includes an array substrate by using a data line and a gate line
  • the layer is fabricated, and the data line is disconnected in the gate line region, and the connection pattern disposed in the gate line region is broken.
  • the data lines are electrically connected. In this way, it can be significant on the basis of ensuring the quality of the grid lines and data lines.
  • the parasitic capacitance Cdc between them prevents the output jump voltage from being excessive due to excessive parasitic capacitance. Effectively improve display screen flicker, reduce data line delay and power consumption, and improve the quality of display devices.
  • the embodiment of the invention further provides a method for manufacturing an array substrate, the method comprising:
  • the gate line and the data line can be formed of the same layer of metal material by a patterning process.
  • connection pattern Form a connection pattern on the corresponding gate line region on the substrate on which the gate line and the data line are formed.
  • the connection pattern is insulated from the gate lines, and the data lines on both sides of the gate lines are electrically connected by a connection pattern.
  • the method for manufacturing an array substrate provided by the embodiment of the present invention is to make a data line and a gate line in the same layer. And the data line is disconnected in the gate line region, and the disconnected data line is formed by the connection pattern disposed in the gate line region Electrical connection.
  • the data can be significantly increased on the basis of ensuring the quality of the gate line and the data line.
  • the spacing between the line and the transparent electrode which can effectively reduce the parasitic between the data line and the transparent electrode Capacitor Cdc, in order to avoid the output jump voltage caused by excessive parasitic capacitance, effectively change Good display flickering, reducing data line delay and power consumption, and improving the quality of the display device.
  • the method for manufacturing an array substrate provided by the embodiment of the present invention includes:
  • the insulating layer pattern 261 is formed in The area on both sides of the gate line where the data line is to be formed.
  • the insulating layer pattern 261 may be further formed at The channel region of the TFT.
  • the transparent substrate may be made of a transparent material such as glass or a transparent resin having a certain firmness. to make.
  • an insulating layer pattern is formed by one patterning process. For example, you can first The surface of the transparent substrate is coated with a layer of organic resin material having a certain thickness, by having a specific pattern The mask is subjected to exposure development to finally form an insulating layer pattern 261 as shown in FIG.
  • plasma enhanced chemical vapor deposition can be used on a substrate on which an insulating layer pattern is formed.
  • PECVD plasma enhanced chemical vapor deposition
  • the metal layer can A single layer film formed of a metal such as molybdenum, aluminum, aluminum bismuth alloy, tungsten, chromium, or copper, or the like A multilayer film formed of metal. Patterning the metal layer to form a gate 71 and a gate line of the TFT 21 and the data line 22 are as shown in the top view of the array substrate in FIG.
  • the gate 71 of the TFT is located in the trench
  • the insulating layer pattern 261 of the track region is used to form a metal layer.
  • a surface of the substrate on which the gate lines and the data lines are formed may be coated with a certain thickness
  • the organic resin material is as shown in FIG. 6 to form a layer 260 of insulating material.
  • the insulating material layer 260 The gate and data lines will be completely covered.
  • the insulating material layer 260 is processed by an ashing process, and its thickness is reduced overall. Low until the surface of the data line is exposed, a patterned first insulating layer 26 is finally formed.
  • an ashing process is taken as an example, and it should be understood that in order to expose the position In the data lines on the surface of the insulating layer pattern, various other patterning processes can also be used, and the present invention No restrictions.
  • the ends of the data lines on both sides of the gate lines are exposed on the surface of the first insulating layer, and the number A first insulating layer is formed on the surface of the portion other than the end portions on both sides of the gate line.
  • a uniform thickness is formed on the surface of the substrate on which the first insulating layer 26 is formed.
  • Gate insulating layer 27 is formed on the surface of the substrate on which the first insulating layer 26 is formed.
  • a semiconductor layer may be formed on the surface of the substrate on which the above structure is formed, and exposed through a mask The active layer 111 as shown in the top view of the array substrate in FIG. 9 is formed.
  • the active layer 111 may adopt semiconductor characteristics.
  • the metal oxide material may include: IGZO, IGO, At least one of ITZO and AlZnO.
  • Transparent metal is used relative to a-Si TFT or LTPS TFT
  • An oxide material to form an active layer of the TFT which has low preparation temperature requirements and high mobility Advantages, the technology can be applied to high frequency display and high resolution display products, and compared to LTPS TFT Technology has the advantages of low equipment investment cost and low operating guarantee cost.
  • the pattern 23 of the etch stop layer can be as shown in FIG.
  • it can be formed by An etch stop layer is coated or deposited on the substrate of the structure.
  • the substrate structure can be as shown in FIG.
  • connection pattern 25 can be further formed by the patterning process in the region of the via hole. This can effectively define the coverage area of the connection pattern 25.
  • An array substrate having such a structure Since the first line having a certain thickness is further added between the data line 22 and the first transparent electrode 241 The insulating layer 26 and the gate insulating layer 27, so that the data line 22 and the first transparent electrode can be further enlarged The spacing between 241 reduces the parasitic capacitance existing between the data line 22 and the first transparent electrode 241 Cdc.
  • connection pattern 25 The substrate structure in which the connection pattern 25 is formed may be as shown in FIG. Data line on both sides of the grid line The connection patterns 25 are electrically connected to each other.
  • the substrate on which the first transparent electrode 241 is formed may be as shown in FIG.
  • the substrate on which the passivation layer 28 is formed may be as shown in FIG.
  • a top view of the substrate on which the second transparent electrode 242 is formed may be as shown in FIG. 15 along the G-G
  • a schematic cross-sectional view of the direction is a schematic structural view of the array substrate shown in FIG.
  • the first transparent electrode 241 may be a pixel electrode, and the second transparent electrode 242 may be a common electrode, and The first transparent electrode 241 may be a plate-like structure, and the second transparent electrode 242 may include a plurality of spaces. Arranged strip electrodes.
  • the array substrate provided by the embodiment of the invention can also be applied to an ADS type display device and an IPS type.
  • Production of various display device array substrates such as display devices or TN type display devices. I can think of it when When the position or shape structure of the pixel electrode or the common electrode is changed, by changing the above process Related steps, the production of various structural array substrates can also be realized, which is in the embodiment of the present invention. Not enumerated one by one.
  • the space between the data line and the transparent electrode can be significantly increased. Distance, so that the capacitance between the two electrodes of the parallel plate capacitor is increased, so that the capacitance value is significantly reduced. It can effectively reduce the parasitic capacitance Cdc between the data line and the transparent electrode, thereby avoiding parasitic If the capacitor is too large, the output jump voltage is poor, which can effectively improve the display screen flicker and lower the data line. Delay and power consumption improve the quality of the display device.

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Abstract

一种阵列基板及其制造方法、显示装置。该阵列基板包括：在透明基板上横纵交叉设置的多条栅线(21)和数据线(22)。所述数据线(22)与所述栅线(21)同层形成在所述透明基板(20)的表面，所述数据线(22)在所述栅线(21)区域断开。所述栅线(21)的区域具有连接图案(25)，所述连接图案(25)与所述栅线(21)绝缘，位于所述栅线(21)两侧的所述数据线(22)通过所述连接图案(25)电连接。该阵列基板可以降低数据线 (22)与透明电极(241)之间的寄生电容，提高显示装置的质量。

Description

阵列基板及其制造方法、显示装置 技术领域
本发明的实施例涉及一种阵列基板及其制造方法、显示装置。
背景技术
随着TFT-LCD(Thin Film Transistor Liquid Crystal Display，薄膜 晶体管液晶显示器)的不断发展，各种新型半导体元件及其在显示装 置中的应用技术也随之得到了飞跃性的进步。
在TFT的制造过程当中，为了进一步提高显示面板的开口率，通 常采用透明的金属氧化物材料(如氧化铟锡(ITO))来制作TFT的 源漏极以及数据线。这样一种阵列基板沿数据线方向的截面结构可以 如图1所示，栅线11(包括TFT的栅极)以及栅绝缘层12依次形成 在透明基板10表面，数据线13形成在栅绝缘层12的表面，该数据线 13采用ITO材料制成，数据线13的表面依次形成有刻蚀阻挡层14以 及透明电极15。
在如图1所示的阵列基板中，数据线13与透明电极15之间具有 较长的一段交叠区域，这样一来，在通电的情况下，由于层级差异， 数据线14与透明电极15之间将产生寄生电容Cdc。在数据线14输入 电压信号的瞬间，由于寄生电容的存在，数据线14上电压信号由高到 低的变化会使得透明电极15相应地发生电压变化，从而引起施加到像 素中的液晶上的电压发生变化，使得显示画面闪烁，同时数据线延时 以及功耗也将随之增加。
发明内容
根据本发明的实施例，提供一种阵列基板。该阵列基板包括：在透明基 板上横纵交叉设置的多条栅线和数据线。所述数据线与所述栅线同层形成在 所述透明基板的表面，所述数据线在所述栅线区域断开。所述栅线的区域具 有连接图案，所述连接图案与所述栅线绝缘，位于所述栅线两侧的所述数据 线通过所述连接图案电连接。
根据本发明的实施例，提供一种显示装置。所述显示装置包括如上所述 的阵列基板。
根据本发明的实施例，提供一种阵列基板的制造方法。所述方法包括： 在透明基板的表面同层形成栅线和数据线，数据线在栅线区域断开；在形成 有所述栅线和所述数据线的基板上对应所述栅线区域形成连接图案，所述连 接图案与所述栅线绝缘，位于所述栅线两侧的所述数据线通过所述连接图案 电连接。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作 简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例， 而非对本发明的限制。
图1为根据一种技术的阵列基板的结构示意图；
图2为本发明实施例提供的一种阵列基板的结构示意图；
图3为本发明实施例提供的另一阵列基板的结构示意图；
图4为形成绝缘层图案后的基板的局部俯视图及其A-A向剖视图；
图5为形成栅线、数据线以及TFT的栅极后的基板的局部俯视图及其 B-B向剖视图；
图6为形成绝缘材料层后的基板的结构示意图；
图7为形成第一绝缘层后的基板的结构示意图；
图8为形成栅绝缘层后的基板的结构示意图；
图9为形成有源层后的基板的局部俯视图及其C-C向剖视图；
图10为形成刻蚀阻挡层后的基板的结构示意图；
图11为形成过孔后的基板的局部俯视图及其D-D向剖视图；
图12为形成连接图案及TFT的源漏极后的基板的局部俯视图及其E-E 向剖视图；
图13为形成第一透明电极后的基板的局部俯视图及其F-F向剖视图；
图14为形成钝化层后的基板的结构示意图；以及
图15为形成第二透明电极后的基板的局部俯视图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合附图， 对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例 是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实 施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实 施例，都属于本发明保护的范围。
本发明实施例提供的阵列基板，如图2所示，包括：横纵交叉设置的多 条栅线21和数据线22，数据线22与栅线21同层设置，且数据线22在栅线 21区域断开。所述阵列基板还包括第一透明电极241，在至少部分数据线与 所述第一透明电极241之间设置有第一绝缘层26、栅绝缘层27和刻蚀阻挡 层23。
例如，栅线21和数据线22可以采用同一金属层，通过一次构图工艺形 成在透明基板20的表面上。
进一步地，栅线21区域具有连接图案25，该连接图案25与栅线21绝 缘，位于栅线21两侧的数据线22通过连接图案25电连接。
在本发明实施例提供的阵列基板中，数据线与栅线同层制作，且数据线 在栅线区域断开，采用设置于栅线区域的连接图案将断开的数据线电连接。 这样一来，在保证了栅线和数据线质量的基础上可以显著增加数据线与透明 电极之间的间距，从而可以有效降低数据线与透明电极之间的寄生电容Cdc， 进而避免由于寄生电容过大而产生的输出跳变电压不良，有效改善显示画面 闪烁，降低数据线延时以及功耗，提高显示装置的质量。
如图2所示，所述第一绝缘层26覆盖栅线21以及数据线22的除位于栅 线两侧的端部之外的其他部分。数据线22的位于栅线21两侧的端部露出在 该第一绝缘层26的表面。在栅线21区域，连接图案25形成在第一绝缘层 26的表面。
具体的，为了实现数据线22的位于栅线21两侧的端部露出在该第一绝 缘层26的表面，可以在透明基板20的表面预先通过构图工艺形成具有一定 高度的绝缘层图案261，该绝缘层图案261可以位于栅线21两侧的待形成数 据线的区域。在形成有绝缘层图案261的基板的表面进一步形成栅线21和数 据线22，数据线22的位于栅线21两侧的端部均覆盖在绝缘层图案261的表 面。然后，沉积绝缘层材料以至少暴露出位于绝缘层图案261表面的数据线， 从而最终形成第一绝缘层26。
当然，以上也仅仅是对形成具有上述结构的第一绝缘层26的举例说明， 也可以采用其他工艺形成上述第一绝缘层26，本发明对此并不做限制。
可以明显的看到，在图2所示的阵列基板中，数据线22与第一透明电极 241之间的间距D’远远大于图1中数据线13与透明电极15之间的间距D。 根据平行板电容公式C＝εS/d可知，当其他条件不变时，通过增大两电极之 间的间距可以实现电容的减小。因此，在本发明实施例中，数据线22与第一 透明电极241之间的寄生电容可以被有效地减小，从而能够有效降低寄生电 容所产生的跳变电压的影响。
在本发明实施例中，阵列基板还可以包括TFT，该TFT的栅极(图中未 示出)与栅线21同层制成。
在TFT的沟道区域，该TFT的栅极部分露出在第一绝缘层26的表面。 为了使TFT的栅极部分露出在第一绝缘层26的表面，可以在栅线21两侧的 待形成数据线的区域形成绝缘层图案261的同时，在TFT的沟道区域形成具 有一定高度的绝缘层图案261。在形成数据线和栅线的同时形成栅极。然后， 沉积绝缘层材料以形成第一绝缘层26并使TFT的栅极部分露出在第一绝缘 层26的表面。这样一来，可以抬高TFT的栅极，以使得TFT的沟道区域与 数据线的位于栅线两侧的端部之间没有明显的段差，在后续加工的过程中可 以避免TFT的源漏极与连接图案25之间由于存在较大的段差而产生断路， 从而提高了显示面板的质量。
进一步地，阵列基板还可以包括依次形成在TFT的栅极表面的所述栅绝 缘层27以及有源层(图2中未示出)。
有源层可以采用呈半导体特性的透明金属氧化物材料制成。例如，金属 氧化物材料可以包括：IGZO(铟镓锌氧化物)、IGO(铟镓氧化物)、ITZO (铟锡锌氧化物)、AlZnO(铝锌氧化物)中的至少一种。相对于a-Si(非 晶硅)TFT或LTPS(低温多晶硅)TFT，采用透明金属氧化物材料来形成 TFT的有源层，可具有制备温度要求低，迁移率高等优势，该技术可应用于 高频显示和高分辨率显示产品，且相对于LTPS TFT技术具有设备投资成本 低、运营保障成本低等优点。
在如图2所示的阵列基板中，栅绝缘层27形成在第一绝缘层26表面。 刻蚀阻挡层23形成在栅绝缘层27的表面。
在栅线21区域，过孔贯穿刻蚀阻挡层23和栅绝缘层27，以暴露出过孔 底部的第一绝缘层26以及数据线22的位于栅线21两侧的端部。
这样一来，可以在该过孔的区域通过构图工艺进一步形成连接图案25， 这样可以有效限定连接图案25的覆盖区域。采用这样一种结构的阵列基板， 由于在数据线22和第一透明电极241之间进一步增加了具有一定厚度的第一 绝缘层26以及栅绝缘层27，从而可以进一步增大数据线22与第一透明电极 241之间的间距，减小数据线22与第一透明电极241之间存在的寄生电容 Cdc。
或者，本发明实施例提供的阵列基板的结构还可以如图3所示，包括： 第一绝缘层262，该第一绝缘层262覆盖栅线21与数据线22。在栅线21区 域，连接图案25形成在第一绝缘层262的表面，且连接图案25通过穿过第 一绝缘层262的过孔分别与数据线22的位于栅线21两侧的端部电连接。
在图3所示的阵列基板中，其余结构均可以参考图2所示的阵列基板， 与图2所示的阵列基板的不同之处在于，图3所示的阵列基板无需预先在透 明基板的表面形成绝缘层图案261，从而可以在一定程度上简化阵列基板的 制作工艺，降低生产难度。
在本发明实施例中，图2所示的第一绝缘层26和图3所示的第一绝缘层 262均可以采用具有良好绝缘性的有机树脂材料等材料制成，本发明对此并 不做限制。
需要说明的是，本发明实施例提供的TFT-LCD阵列基板可以适用于FFS (Fringe Field Switching，边缘场开关)型、AD-SDS(Advanced-Super  Dimensional Switching，简称为ADS，高级超维场开关)型、IPS(In Plane  Switch，横向电场效应)型、TN(Twist Nematic，扭曲向列)型等类型的液 晶显示装置。其中，ADS技术是通过同一平面内像素电极边缘所产生的平行 电场以及像素电极层与公共电极层间产生的纵向电场形成多维电场，使液晶 盒内像素电极间、电极正上方所有取向液晶分子都能够产生旋转转换，从而 提高了平面取向系液晶工作效率并增大了透光效率。
无论上述哪种液晶显示装置都包括对盒成形的对向基板和阵列基板。不 同的是，TN型显示装置的公共电极设置在对向基板上，像素电极设置在阵 列基板上；FFS型显示装置、ADS型显示装置以及IPS型显示装置的公共电 极和像素电极均设置在阵列基板上。
如图2所示，在本发明实施例中是以FFS型显示装置为例进行的说明。 其中，阵列基板还可以包括：形成在第一透明电极241表面的钝化层28，该 钝化层28覆盖位于栅线21区域的连接图案25；以及形成在该钝化层表面的 第二透明电极242。
第一透明电极241可以为像素电极，第二透明电极242可以为公共电极， 且该第一透明电极241可以为板状结构，第二透明电极242可以包括多个间 隔排列的条状电极。
在所述FFS型显示装置的阵列基板中，所述公共电极和所述像素电极异 层设置，可选的，位于上层的电极包含多个条形电极，位于下层的电极可以 包含多个条形电极或为平板形。在本发明实施例中，是以位于下层的电极为 平板形为例进行的说明。异层设置是针对至少两种图案而言的，至少两种图 案异层设置是指，分别将至少两层薄膜通过构图工艺形成至少两种图案。对 于两种图案异层设置是指，通过构图工艺，由两层薄膜各形成一种图案。例 如，公共电极和像素电极异层设置是指：由第一层透明导电薄膜通过构图工 艺形成下层电极，由第二层透明导电薄膜通过构图工艺形成上层电极，其中， 下层电极为公共电极(或像素电极)，上层电极为像素电极(或公共电极)。
本发明实施例提供的阵列基板同样可以适用于IPS型显示装置，与FFS 型显示装置不同的是，所述公共电极和所述像素电极同层设置，所述公共电 极包含多个第一条形电极，所述像素电极包含多个第二条形电极，所述第一 条形电极和所述第二条形电极间隔设置。同层设置是针对至少两种图案而言 的；至少两种图案同层设置是指：将同一薄膜通过构图工艺形成至少两种图 案。例如，公共电极和像素电极同层设置是指：由同一透明导电薄膜通过构 图工艺形成像素电极和公共电极。像素电极是指通过开关单元(例如，可以 是薄膜晶体管)与数据线电连接的电极，公共电极是指和公共电极线电连接 的电极。
本发明实施例还提供一种显示装置，该显示装置包括如上所述的阵列基 板。
该阵列基板包括横纵交叉设置的多条栅线21和数据线22，数据线22与 栅线21同层设置，且数据线22在栅线21区域断开。所述阵列基板还包括第 一透明电极241，在至少部分数据线与所述第一透明电极241之间设置有第 一绝缘层26(或第一绝缘层262)、栅绝缘层27和刻蚀阻挡层23。
所述显示装置可以为：液晶面板、电子纸、OLED面板、液晶电视、液 晶显示器、数码相框、手机、平板电脑等任何具有显示功能的产品或部件。
本发明实施例提供的显示装置，包括阵列基板，通过将数据线与栅线同 层制作，且数据线在栅线区域断开，采用设置于栅线区域的连接图案将断开 的数据线电连接。这样一来，在保证了栅线和数据线质量的基础上可以显著 增加数据线与透明电极之间的间距，从而可以有效降低数据线与透明电极之 间的寄生电容Cdc，进而避免由于寄生电容过大而产生的输出跳变电压不良， 有效改善显示画面闪烁，降低数据线延时以及功耗，提高显示装置的质量。
本发明实施例还提供一种阵列基板制造方法，该方法包括：
S401、在透明基板的表面同层形成栅线和数据线，数据线在栅线区域断 开。
例如，栅线和数据线可以采用同层金属材料，通过一次构图工艺形成在 透明基板的表面。
S402、在形成有栅线和数据线的基板上对应栅线区域形成连接图案，该 连接图案与栅线绝缘，位于栅线两侧的数据线通过连接图案电连接。
本发明实施例提供的阵列基板制造方法，通过将数据线与栅线同层制作， 且数据线在栅线区域断开，采用设置于栅线区域的连接图案将断开的数据线 电连接。这样一来，在保证了栅线和数据线质量的基础上可以显著增加数据 线与透明电极之间的间距，从而可以有效降低数据线与透明电极之间的寄生 电容Cdc，进而避免由于寄生电容过大而产生的输出跳变电压不良，有效改 善显示画面闪烁，降低数据线延时以及功耗，提高显示装置的质量。
进一步地，本发明实施例提供的阵列基板制造方法包括：
S501、在透明基板的表面通过构图工艺形成绝缘层图案。
如图4中阵列基板的俯视图所示，在栅线区域，绝缘层图案261形成在 栅线两侧的待形成数据线的区域。另外，绝缘层图案261可以进一步形成在 TFT的沟道区域。
透明基板可以是采用玻璃或透明树脂等具有一定坚固性的透明材料制 成。
在透明基板上，采用一次构图工艺形成绝缘层图案。例如，可以首先在 透明基板的表面涂覆一层具有一定厚度的有机树脂材料，通过具有特定图案 的掩膜进行曝光显影最终形成如图4所示的绝缘层图案261。
S502、在形成有绝缘层图案的基板的表面通过构图工艺形成TFT的栅 极、栅线和数据线，数据线位于栅线两侧的端部覆盖在绝缘层图案的表面。
例如，在形成有绝缘层图案的基板上可以采用等离子增强化学气相沉积 (PECVD)、磁控溅射、热蒸发或其它成膜方法，形成金属层。该金属层可 以是钼、铝、铝铷合金、钨、铬、铜等金属形成的单层薄膜，也可以是以上 金属形成的多层薄膜。对该金属层进行图案化，形成TFT的栅极71、栅线 21以及数据线22，如图5中阵列基板的俯视图所示。TFT的栅极71位于沟 道区域的绝缘层图案261上。
S503、在栅线和数据线的表面形成绝缘材料层。
例如，可以在形成有栅线和数据线的基板的表面涂覆一层具有一定厚度 的有机树脂材料，如图6所示，以形成绝缘材料层260。该绝缘材料层260 将完全覆盖栅线和数据线。
S504、采用灰化工艺处理绝缘材料层，以至少暴露出位于绝缘层图案表 面的数据线，形成第一绝缘层。
如图7所示，该绝缘材料层260通过灰化工艺的处理，其厚度将整体降 低，直至暴露出数据线的表面为止，最终形成图案化的第一绝缘层26。在本 发明实施例中是以采用灰化工艺为例进行的说明，应当理解，为了暴露出位 于绝缘层图案表面的数据线，还可以采用其他各种构图工艺，本发明对此并 不作限制。
这样一来，数据线位于栅线两侧的端部露出在第一绝缘层的表面，而数 据线的除位于栅线两侧的端部之外的其他部分的表面形成有第一绝缘层。
S505、在形成有第一绝缘层的基板的表面形成栅绝缘层。
如图8所示，在形成有第一绝缘层26的基板的表面上形成有厚度均一的 栅绝缘层27。
S506、在栅绝缘层对应TFT的栅极区域的表面通过构图工艺形成有源 层。
例如，可以在形成有上述结构的基板表面形成半导体层，通过掩膜曝光 形成如图9中阵列基板俯视图所示的有源层111。
需要说明的是，在本发明实施例中，有源层111可以采用呈半导体特性 的透明金属氧化物材料制成。例如，金属氧化物材料可以包括：IGZO、IGO、 ITZO、AlZnO中的至少一种。相对于a-Si TFT或LTPS TFT，采用透明金属 氧化物材料来形成TFT的有源层，可以具有制备温度要求低，迁移率高等 优势，该技术可应用于高频显示和高分辨率显示产品，且相对于LTPS TFT 技术具有设备投资成本低、运营保障成本低等优点。
S507、在形成有有源层的基板的表面形成刻蚀阻挡层。
刻蚀阻挡层的图案23可以如图10所示。例如，可以通过在形成有上述 结构的基板上涂覆或沉积刻蚀阻挡层。
S508、在刻蚀阻挡层的表面通过构图工艺形成贯穿刻蚀阻挡层和栅绝缘 层的过孔，以暴露出过孔底部的第一绝缘层以及数据线的位于栅线两侧的端 部。
此时，基板结构可以如图11所示。
这样一来，可以在该过孔的区域通过构图工艺进一步形成连接图案25， 这样可以有效限定连接图案25的覆盖区域。采用这样一种结构的阵列基板， 由于在数据线22和第一透明电极241之间进一步增加了具有一定厚度的第一 绝缘层26以及栅绝缘层27，从而可以进一步增大数据线22与第一透明电极 241之间的间距，减小数据线22与第一透明电极241之间存在的寄生电容 Cdc。
S509、在第一绝缘层的表面，对应栅线区域通过构图工艺形成连接图案。
形成有连接图案25的基板结构可以如图12所示。栅线两侧的数据线通 过该连接图案25而彼此电连接。
S510、在形成有刻蚀阻挡层的基板的表面通过构图工艺形成第一透明电 极。
形成有第一透明电极241的基板可以如图13所示。
S511、在第一透明电极的表面通过构图工艺形成钝化层，该钝化层同时 覆盖位于栅线区域的连接图案。
形成有钝化层28的基板可以如图14所示。
S512、在钝化层的表面通过构图工艺形成第二透明电极。
形成有第二透明电极242的基板的俯视图可以如图15所示，其沿G-G 方向的截面示意图即为图2所示的阵列基板结构示意图。
当然，以上仅是以图2所示的阵列基板的制作方法为例进行的说明。在 本发明实施例中，在制造如图3所示的阵列基板时，相应的需要对工艺步骤 进行一定的调整。
需要说明的是，在本发明实施例中是以FFS型显示装置为例进行的说明。 第一透明电极241可以为像素电极，第二透明电极242可以为公共电极，且 该第一透明电极241可以为板状结构，第二透明电极242可以包括多个间隔 排列的条状电极。
本发明实施例提供的阵列基板同样可以适用于ADS型显示装置、IPS型 显示装置或TN型显示装置等各种显示装置阵列基板的生产。可以想到，当 像素电极或公共电极的位置或形状结构发生变化时，通过改变上述工序中的 相关步骤，同样可以实现各种结构阵列基板的生产，本发明实施例中对此并 不一一列举。
采用上述阵列基板制造方法，可以显著增加数据线与透明电极之间的间 距，这样由于平行板电容两电极之间的间距增大，使得电容值明显降低，从 而可以有效降低数据线与透明电极之间的寄生电容Cdc，进而避免由于寄生 电容过大而产生的输出跳变电压不良，有效改善显示画面闪烁，降低数据线 延时以及功耗，提高显示装置的质量。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范 围，本发明的保护范围由所附的权利要求确定。
相关申请的交叉引用
本申请要求于2013年12月26日递交的第201310739422.6号中国专利 申请的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的 一部分。

Claims (20)

  1. 一种阵列基板，包括：在透明基板上横纵交叉设置的多条栅线和数据 线，其中
    所述数据线与所述栅线同层形成在所述透明基板的表面，所述数据线在 所述栅线区域断开；并且
    所述栅线的区域具有连接图案，所述连接图案与所述栅线绝缘，位于所 述栅线两侧的所述数据线通过所述连接图案电连接。
  2. 根据权利要求1所述的阵列基板，其中所述阵列基板还包括第一透明 电极，在至少部分数据线与所述第一透明电极之间设置有第一绝缘层、栅绝 缘层和刻蚀阻挡层。
  3. 根据权利要求2所述的阵列基板，其中
    所述第一绝缘层覆盖栅线以及数据线的除位于栅线两侧的端部之外的其 他部分，数据线的位于栅线两侧的端部露出在该第一绝缘层的表面。
  4. 根据权利要求3所述的阵列基板，其中
    所述阵列基板还包括TFT，所述TFT的栅极与所述栅线同层制成；并且
    所述TFT的栅极部分露出在所述第一绝缘层的表面。
  5. 根据权利要求3所述的阵列基板，其中
    所述栅绝缘层形成在所述第一绝缘层表面；
    所述刻蚀阻挡层形成在所述栅绝缘层的表面；
    在所述栅线区域，过孔贯穿所述刻蚀阻挡层和所述栅绝缘层，以暴露出 过孔底部的所述第一绝缘层以及所述数据线的位于所述栅线两侧的端部。
  6. 根据权利要求5所述的阵列基板，其中
    所述连接图案形成在所述过孔中，并电连接所述数据线的位于所述栅线 两侧的端部。
  7. 根据权利要求2所述的阵列基板，其中
    所述第一绝缘层覆盖所述栅线与所述数据线；
    在所述栅线区域，所述连接图案形成在所述第一绝缘层的表面，且所述 连接图案通过贯穿所述第一绝缘层的过孔分别与位于所述栅线两侧的所述数 据线电连接。
  8. 根据权利要求7所述的阵列基板，其中
    所述栅绝缘层形成在所述第一绝缘层表面；并且
    所述刻蚀阻挡层形成在所述栅绝缘层的表面。
  9. 根据权利要求1-8任一所述的阵列基板，其中所述阵列基板还包括：
    形成在所述第一透明电极表面的钝化层，所述钝化层还覆盖位于所述栅 线区域的连接图案；
    以及形成在所述钝化层表面的第二透明电极。
  10. 根据权利要求9所述的阵列基板，其中所述第一透明电极为像素电 极，所述第二透明电极为公共电极；并且
    所述第一透明电极为板状结构，所述第二透明电极包括多个间隔排列的 条状电极。
  11. 一种显示装置，包括如权利要求1-10任一所述的阵列基板。
  12. 一种阵列基板制造方法，包括：
    在透明基板的表面同层形成栅线和数据线，数据线在栅线区域断开；
    在形成有所述栅线和所述数据线的基板上对应所述栅线区域形成连接图 案，所述连接图案与所述栅线绝缘，位于所述栅线两侧的所述数据线通过所 述连接图案电连接。
  13. 根据权利要求12所述的制造方法，还包括：
    形成第一透明电极，并且在至少部分数据线与所述第一透明电极之间形 成第一绝缘层、栅绝缘层和刻蚀阻挡层。
  14. 根据权利要求13所述的制造方法，包括：
    在透明基板的表面通过构图工艺形成绝缘层图案，该绝缘层图案形成在 栅线两侧的待形成数据线的区域；
    在形成有绝缘层图案的基板的表面通过构图工艺形成栅线和数据线，数 据线位于栅线两侧的端部覆盖在绝缘层图案的表面；
    在栅线和数据线的表面形成绝缘材料层；
    采用灰化工艺处理绝缘材料层，以至少暴露出位于绝缘层图案表面的数 据线，以形成所述第一绝缘层。
  15. 根据权利要求14所述的制造方法，还包括
    在形成有所述第一绝缘层的基板的表面形成所述栅绝缘层；
    在所述栅绝缘层对应TFT的栅极区域的表面通过构图工艺形成有源层；
    在形成有所述有源层的基板的表面形成所述刻蚀阻挡层；
    在刻蚀阻挡层的表面通过构图工艺形成贯穿刻蚀阻挡层和栅绝缘层的过 孔，以暴露出过孔底部的第一绝缘层以及数据线的位于栅线两侧的端部；以 及
    在第一绝缘层的表面，对应栅线区域通过构图工艺形成所述连接图案。
  16. 根据权利要求14所述的方法，其中所述绝缘层图案还位于TFT的 沟道区域，所述TFT的栅极部分覆盖在所述绝缘层图案的表面。
  17. 根据权利要求13所述的制造方法，包括：
    在透明基板的表面同层形成栅线和数据线；
    形成所述第一绝缘层以覆盖所述栅线和所述数据线；并且
    形成贯穿所述第一绝缘层的过孔，该过孔对应于数据线的位于栅线两侧 的端部；以及
    在所述第一绝缘层的表面，对应栅线区域通过构图工艺形成连接图案。
  18. 根据权利要求17所述的方法，还包括：
    在所述第一绝缘层的表面形成所述栅绝缘层；
    在所述栅绝缘层对应TFT的栅极区域的表面通过构图工艺形成有源层；
    在形成有所述有源层的基板的表面形成所述刻蚀阻挡层。
  19. 根据权利要求13-18任一所述的阵列基板制造方法，还包括：
    在形成有刻蚀阻挡层的基板的表面通过构图工艺形成所述第一透明电 极；
    在所述第一透明电极的表面通过构图工艺形成钝化层，所述钝化层还覆 盖位于所述栅线区域的连接图案；
    在所述钝化层的表面通过构图工艺处理形成第二透明电极。
  20. 根据权利要求19所述的阵列基板制造方法，其中所述第一透明电极 为像素电极，所述第二透明电极为公共电极；并且
    所述第一透明电极为板状结构，所述第二透明电极包括多个间隔排列的 条状电极。
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