WO2015085698A1 - 显示装置 - Google Patents

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Publication number
WO2015085698A1
WO2015085698A1 PCT/CN2014/076233 CN2014076233W WO2015085698A1 WO 2015085698 A1 WO2015085698 A1 WO 2015085698A1 CN 2014076233 W CN2014076233 W CN 2014076233W WO 2015085698 A1 WO2015085698 A1 WO 2015085698A1
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WIPO (PCT)
Prior art keywords
electrode layer
display device
substrate
layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2014/076233
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English (en)
French (fr)
Inventor
崔贤植
金熙哲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to US14/422,749 priority Critical patent/US9804453B2/en
Publication of WO2015085698A1 publication Critical patent/WO2015085698A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13398—Spacer materials; Spacer properties
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134381—Hybrid switching mode, i.e. for applying an electric field with components parallel and orthogonal to the substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/16—Materials and properties conductive

Definitions

  • the present invention relates to the field of display, and in particular, to a display device. Background technique
  • the large storage capacitor Cst will affect the charging rate, so Cst needs to be designed to be smaller; but it is driven by low frequency (below 30Hz, usually 10Hz, 5Hz).
  • VHR voltage holding ratio
  • the voltage holding ratio depends on the size of Cst. If Cst is too small, VHR cannot maintain a normal value, so a large Cst is required for low frequency driving. For example, if the Csti ⁇ of a pixel at 60 Hz is 1 , then a low frequency drive of 6 Hz (ie, the drive frequency becomes 1/10 of the original) will require approximately 10 times Cst.
  • the pixels are generally designed for different driving frequencies. Specifically, in order to make the charging rate meet the design requirements during high frequency driving, a small pixel electrode is designed to reduce Cst; and in low frequency driving, the pixel electrode is designed to be large to ensure a larger Cst, but the disadvantage is that the high frequency When driving, the pixel electrode is small, and the aperture ratio is also reduced accordingly.
  • the structure of a novel ADS mode display device is as shown in FIG. 1 .
  • the color film substrate 10 and the ADS array substrate 20 are paired.
  • the color filter substrate 10 includes: a substrate 11 , a color film layer disposed on the substrate 11 , and a common Electrode 13;
  • the ADS array substrate 20 includes a substrate 21, a pixel electrode 22 disposed on the substrate 21, a pixel electrode 22 being a slit electrode, and a common electrode 13 being a plate electrode.
  • the new ADS mode shown in Figure 1 has a small Cst, and has an advantage in charging rate design when driving at high frequencies, but it is also not suitable for low frequency driving because Cst is small.
  • the AD S (Advanced-Super Dimensional Switching) mode described above refers to an advanced super-dimensional field switching mode, referred to as ADS.
  • the principle is: through the same plane pixel electrode or public
  • the parallel electric field generated by the edge of the common electrode and the longitudinal electric field generated between the pixel electrode and the common electrode form a multi-dimensional electric field, so that the liquid crystal molecules in the liquid crystal cell can be rotated, thereby improving the working efficiency of the planar orientation liquid crystal and increasing the light transmission efficiency.
  • Embodiments of the present invention provide a display device capable of realizing low frequency (low standing wave) driving while achieving high frequency driving without causing a reduction in aperture ratio due to a guaranteed charging rate.
  • the embodiment of the present invention provides a display device, including: a first reverse and a second substrate opposite to each other, the first reverse includes: a first electrode
  • the second substrate includes: a second electrode layer
  • the first substrate further includes: a third electrode layer disposed on a side of the first electrode layer away from the second substrate, and An insulating layer is interposed between the third electrode layer and the first electrode layer; and the third electrode layer is electrically connected to the second electrode layer.
  • a switch is disposed between the third electrode layer and the second electrode layer, and the switch is turned off when the display device performs high frequency driving.
  • the first substrate is a color film substrate
  • the insulating layer is a color film layer
  • the color film layer includes: a black matrix, and a color block separated by the black matrix.
  • the display device further includes a spacer having conductivity, and the third electrode layer is electrically connected to the second electrode layer through the spacer.
  • the first reverse is provided with a via hole penetrating the first electrode layer and the insulating layer, and the spacer is connected to the third electrode layer through the via hole.
  • the second electrode layer is provided with a slit electrode.
  • the second electrode layer is a pixel electrode layer, and the slit electrode is a pixel electrode.
  • the second substrate is further provided with: a thin film transistor connected to the pixel electrode; The first electrode layer is connected to a drain of the thin film transistor through the spacer.
  • the first electrode layer, the second electrode layer and the second electrode layer are all transparent conductive films.
  • the total thickness of the first electrode layer, the second electrode layer, and the third electrode layer is less than 1000 angstroms.
  • the first and second electrode layers for generating the driving electric field are respectively located on the color film and the array plate, and the distance is relatively long, and the Cst is relatively small, which is suitable for high frequency driving; and the display provided by the embodiment of the present invention
  • the device is provided with a first electrode layer and a third electrode layer via an insulating layer on the first substrate; and electrically connecting the third electrode layer away from the second difference to the second electrode layer on the second difference
  • the second electrode layer on the second opposite side forms a first capacitance Cist with the first electrode layer
  • the first electrode layer and the third electrode layer form a second capacitance C2st
  • the storage capacitance Cst of the display device is actually Clst+C2st.
  • the display device provided in this embodiment has a large storage capacitance and can be adapted to low frequency driving as compared with the prior art. Further, at the time of high frequency driving, the electrical connection between the third electrode layer 33 and the second electrode layer 42 can be broken, thereby reducing the storage capacitance Cst to secure the charging rate. Since Cst is not reduced by using a smaller pixel electrode, the aperture ratio is not reduced at the time of high frequency driving.
  • FIG. 1 is a schematic structural view of a conventional ADS mode display device
  • FIG. 2 is a schematic structural diagram 1 of a display device according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram 2 of a display device according to an embodiment of the present invention.
  • the first, second, etc. are used to classify similar items, and the first and second words are not limited in number, and those skilled in the art according to the present disclosure disclose The apparently similar variations or related extensions of the present invention are within the scope of the present invention.
  • the display device includes: a first anti-30 and a second anti-40 opposite to each other, and the first photo-reverse 30 includes: a first electrode layer 32,
  • the second electrode 40 includes: a second electrode layer 42;
  • the first substrate 30 further includes: a third electrode layer 33 disposed on a side of the first electrode layer 32 away from the second substrate 40 (ie, the first electrode layer 32 The upper layer), and the insulating layer 34 is interposed between the third electrode layer 33 and the first electrode layer 32; the third electrode layer 33 is electrically connected to the second electrode layer 42.
  • the first and second electrode layers for generating the driving electric field are respectively located on the color film and the array plate, and the distance is relatively long, and the Cst is relatively small, which is suitable for high frequency driving; and the display provided by the embodiment of the present invention
  • the first electrode layer 32 and the third electrode layer 33 separated by the insulating layer 34 are disposed on the first reverse 30; and the third electrode layer 33 away from the second substrate 40 is further electrically connected to the second electrode layer 42.
  • the second electrode layer 42 on the second reverse 40 forms a first capacitance Cist with the first electrode layer 32, the first electrode layer 32 and the third electrode layer 33 form a second capacitance C2st, and the storage capacitor Cst of the display device is actually Clst+C2st . Therefore, compared with the prior art, the display device provided by the embodiment has a large storage capacity and is suitable for low frequency driving.
  • a small pixel electrode is required to reduce the storage capacitor Cst, but the disadvantage is that the pixel electrode is small at the high frequency driving, and the aperture ratio is correspondingly reduced. small.
  • the electrical connection between the third electrode layer 33 and the second electrode layer 42 can be disconnected, thereby reducing the storage capacitor Cst to ensure the charging rate, and the aperture ratio is not It will be reduced accordingly.
  • a control switch (not shown) may be provided between the third electrode layer 33 and the second electrode layer 42 for the entire display device to switch between the high frequency drive and the low frequency drive. The control switch is turned off or closed based on the control signal to change the storage capacitor Cst while the aperture ratio does not change.
  • the first substrate 30 is a color film substrate
  • the insulating layer 34 is a color film layer.
  • the color film layer is disposed between the first electrode layer 32 and the third electrode layer 33, and the first electrode layer 32 and the third layer are used as the insulating layer.
  • the electrode layer 33 is separated; of course, the color film layer and the insulating layer may be separately provided.
  • the first electrode layer 32, the insulating layer and the third electrode layer 33 are sequentially disposed to form a sandwich type sandwich structure, and the color film layer 2 is located in the interlayer. Above or below the structure.
  • the color film layer may generally include: a black matrix, and a color block separated by a black matrix.
  • a black matrix For the common RGB (red/green/blue) color mixing scheme, one pixel area generally includes R/G B (red/green/blue) three color block blocks.
  • R/G B red/green/blue
  • the inventive solution can also be used for other color mixing schemes, such as RGBY (red/green/blue/yellow), RGBW (red/green/blue/white) color mixing. Program.
  • the first electrode layer 32 on the first substrate 30 is a common electrode layer, and a common electrode of a plate type is disposed;
  • the second substrate 40 is an array H.
  • the second electrode layer 42 on the second substrate 40 is electrically connected to the third electrode layer 33 on the first reverse 30
  • Each of the two is a pixel electrode layer, wherein the second electrode layer 42 is provided with a slit-shaped pixel electrode, and the third electrode layer 33 is provided with a plate-type pixel electrode.
  • the structure of the color filter substrate is improved, and a transparent conductive film is further formed in the structure of the color film layer + the transparent conductive film, and the transparent conductive film (ie, the third electrode layer) and the array substrate are added.
  • the pixel electrode layers are electrically connected to increase the storage capacitance of the display device, which is suitable for low frequency driving.
  • the implementation of the third electrode layer 33 and the second electrode layer 42 is not limited in the embodiment of the present invention, and may be any implementation well known to those skilled in the art.
  • the third electrode layer 33 is connected to the second electrode layer 42 through a spacer having conductivity, and the spacer is disposed at the first and second counter 40 Between, used to maintain the spacing between the first _ ⁇ ⁇ anti 30 and the second reverse 40.
  • the first substrate 30 is provided with a via 35 penetrating through the first electrode layer 32 and the insulating layer 34 (such as a color film layer), and the spacer 50 One end is connected to the third electrode layer 33 through the via hole 35;
  • the second substrate 40 is provided with a thin film transistor connected to the pixel electrode (the second electrode layer 42 is a pixel electrode layer), and a drain is disposed above the drain of the thin film transistor
  • the via 44, the other end of the spacer 50 is connected to the drain of the thin film transistor through the drain via 44.
  • the spacer 50 has conductivity, thereby connecting the third electrode layer 33 and the pixel electrode, and the pixel electrode on the second substrate and the third electrode layer 33 form a first capacitance Cist, the first electrode layer 32 and the first electrode layer 32
  • the three electrode layer 33 forms a second capacitor
  • the storage capacitance of the display device in the embodiment is increased to Clst+C2st, which is suitable for low frequency driving.
  • the first electrode layer 32, the second electrode layer 42, and the third electrode layer 33 are all transparent conductive films.
  • Common transparent conductive films are: indium tin oxide (ITO), zinc oxide (indium tin oxide). ⁇ ), tin oxide (Sn02), zinc oxide doped with aluminum (AZO), and FTO (tin oxide doped with fluorine).
  • a layer electrode layer, and the third electrode layer is additionally added to the first substrate in the embodiment of the present invention. Therefore, it is necessary to reduce the thickness of each electrode layer so that the transmittance of the entire display device is not increased by an additional amount. The three electrode layer is lowered.
  • the thickness of the electrode layer is generally about 400 angstroms when the plate electrode is formed in the prior art, and the thickness of the electrode layer is about 600 angstroms when the slit electrode is formed. Therefore, the total thickness of the first electrode layer, the second electrode layer and the third electrode layer in this embodiment is less than 1000 angstroms, and generally the transmittance of the entire display device is not lowered.
  • the display device of the embodiment of the present invention has a large storage capacitor and is suitable for low-frequency driving. Moreover, when the high-frequency driving is implemented, the aperture ratio is not reduced in order to ensure the charging rate.
  • the display device may be: a liquid crystal panel, an electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigation device, and the like, or any display product or component.
  • the method for preparing the display device is substantially the same as the prior art, and includes: a first counter process; a second substrate process; and a first substrate and a second substrate pair process, except that the first process is increased by one
  • the process of forming a transparent conductive film is specifically as follows, and includes:
  • Step 1 forming a third electrode layer on the substrate
  • Step 2 forming an insulating layer on the substrate provided with the third electrode layer;
  • Step 3 forming a first electrode layer on the substrate provided with the third electrode layer and the insulating layer, and forming a via hole through the patterning process, the via hole penetrating the first electrode layer and the insulating layer.
  • a transparent conductive film is further formed in the structure of the color film layer + the transparent conductive film, and a transparent conductive film (ie, the third electrode layer) is added by using the conductive spacer. Connected to the second electrode layer of the second substrate. Unlike the existing design concept, this embodiment focuses on the low frequency drive from the beginning of the design, and can simultaneously satisfy the low frequency driving and the high frequency driving, and does not reduce the aperture ratio in the case of high frequency driving.

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Abstract

一种显示装置，包括：相互对盒的第一基板（30）和第二基板（40）。第一基板（30）包括第一电极层（32）和第三电极层（33），第二基板（40）包括第二电极层（42）。第三电极层（33）设置在第一电极层（32）的远离第二基板（40）的一侧，且，第三电极层（33）与第一电极层（32）之间夹设有绝缘层（34）。第三电极层（33）与第二电极层（42）电连接。本显示装置能够实现低频驱动，实现高频驱动时，不会因此导致开口率减少。

Description

显示装置 技术领域
本发明涉及显示领域， 尤其涉及一种显示装置。 背景技术
一般而言， 显示装置采用高频驱动 （60Hz, 120Hz等） 时， 大的存储电容 Cst会影响充电率， 所以 Cst需要设计成较小值； 但是采用低频驱动 （30Hz以下， 一般为 10Hz, 5Hz驱动） 时， 电压保持率 (voltage holding ratio, VHR)依赖 Cst的 大小， 如果 Cst过小 VHR不能维持正常值， 所以低频驱动时需要较大的 Cst。 举例 而言， 如果将 60Hz驱动时像素的 Csti殳为 1 , 那么采用 6Hz (即驱动频率变为原来 的 1/10 )的低频驱动时大概需要将近 10倍的 Cst。 所以， 如果将高频驱动的显示 装置换成低频驱动， 会导致 VHRP条低， 故为了适应高频或低频驱动， 一般针对 不同驱动频度， 分别对像素进行设计。 具体来说， 高频驱动时为了使充电 率符合设计要求， 设计小的像素电极以减少 Cst; 而低频驱动时， 将像素电极 设计成大的以确保更大的 Cst, 但缺点是， 高频驱动时像素电极小， 开口率也会 相应减小。
一种新型 ADS模式显示装置的结构如图 1所示， 由彩膜基板 10和 ADS阵列基 板 20对盒而成， 彩膜基板 10包括： 基板 11 , 设置在基板 11上的彩膜层和公共电 极 13; ADS阵列基板 20包括： 基板 21 , 设置在基板 21上的像素电极 22, 像素电 极 22为狭缝电极，公共电极 13为板式电极。 图 1所示新型 ADS模式因 Cst比较小， 高频驱动时在充电率设计方面具有优势， 但是同时也因 Cst比较小， 并不适 合低频驱动。 其中， 上面所述的 AD S ( Advanced-Super Dimensional Switching )模式， 指高级超维场开关模式， 简称 ADS, 其原理是： 通过同一平面内像素电极或公 共电极边缘所产生的平行电场以及像素电极与公共电极间产生的纵向电场形成 多维电场， 使液晶盒内取向液晶分子都能够产生旋转转换， 从而提高平面取向 系液晶工作效率并增大透光效率。 发明内容
本发明的实施例提供一种显示装置， 能够实现低频（低驻波）驱动， 同时 实现高频驱动时， 不会因保证充电率而导致开口率减少。
为达到上述目的， 本发明的实施例采用如下技术方案： 本发明的实施例提供一种显示装置， 包括： 相互对盒的第一 反和第二基 板， 所述第一 反包括： 第一电极层， 所述第二基板包括： 第二电极层， 所述 第一基板还包括： 第三电极层， 设置在所述第一电极层的远离所述第二基板的 一侧， 且， 所述第三电极层与所述第一电极层之间夹设有绝缘层； 所述第三电 极层与所述第二电极层电连接。
优选地， 在所述第三电极层与所述第二电极层之间设置有开关， 并且所述 开关在所述显示装置进行高频驱动时断开。
优选地， 所述第一基板为彩膜基板， 所述绝缘层为彩膜层。
具体地， 所述彩膜层包括： 黑矩阵， 以及由所述黑矩阵隔开的色阻块。 优选地， 所述显示装置还包括具有导电性的隔垫物， 所述第三电极层通过 所述隔垫物与所述第二电极层电连接。
可选地， 所述第一 反设置有贯穿所述第一电极层及所述绝缘层的过孔， 所述隔垫物穿过所述过孔连接到所述第三电极层。
可选地， 所述第二电极层设置有狭缝电极。
可选地， 所述第二电极层为像素电极层， 所述狭缝电极为像素电极。 可选地， 所述第二基板上还设置有： 与所述像素电极相连的薄膜晶体管； 所述第一电极层通过所述隔垫物与所述薄膜晶体管的漏极相连。 可选地， 所述第一电极层、 所述第二电极层和所述第二电极层均为透明导 电膜。
所述第一电极层、 所述第二电极层和所述第三电极层的总厚度小于 1000埃。 现有显示装置中， 用于产生驱动电场的第一、 第二电极层分别位于彩膜、 阵列极板上， 距离较远， Cst比较小， 适合高频驱动； 而本发明实施例提供的 显示装置， 在第一基板上设置有隔着绝缘层的有第一电极层和第三电极层； 并 且， 将远离第二差 的第三电极层还与第二差 上的第二电极层电连接， 这样， 第二 反上的第二电极层与第一电极层形成第一电容 Cist,第一电极层与第三电 极层形成第二电容 C2st, 显示装置的存储电容 Cst实际为 Clst+ C2st。 因此， 与现 有技术相比， 本实施例提供的显示装置存储电容大， 能够适合低频驱动。 另夕卜， 在高频驱动时， 可以断开第三电极层 33与第二电极层 42之间的电连接， 从而减 少存储电容 Cst以保证充电率。 由于不通过使用较小的像素电极来减少 Cst, 高 频驱动时开口率并不会因此减少。
附图说明
为了更清楚地说明本发明实施例中的技术方案， 下面将对实施例中所需要 使用的附图作简单地介绍， 显而易见地， 下面描述中的附图仅仅是本发明的一 些实施例， 对于本领域普通技术人员来讲， 在不付出创造性劳动的前提下， 还 可以根据这些附图获得其它的附图。
图 1为现有的 ADS模式显示装置的结构示意图；
图 2为本发明实施例提供的显示装置的结构示意图一；
图 3为本发明实施例提供的显示装置的结构示意图二。
附图标记 10-彩膜基板， 11 - 反， 12-彩膜层， 13-公共电极， 20-阵列基板， 21-¾ , 22-像素电极；
30-第一 _ί ^反， 32-第一电极层， 33-第三电极层， 34-绝缘层，
35-过孔， 40-第二基板， 42-第二电极层， 44-漏极过孔，
50-隔垫物。
具体实施方式
下面将结合本发明实施例中的附图， 对本发明实施例中的技术方案进行清 楚、 完整地描述， 显然， 所描述的实施例仅仅是本发明一部分实施例， 而不是 全部的实施例。
为了便于清楚说明， 在本发明中采用了第一、 第二等字样对相似项进行类 别区分， 该第一、 第二字样并不在数量上对本发明进行限制， 本领域技术人员 根据本发明公开的内容， 想到的显而易见的相似变形或相关扩展均属于本发明 的保护范围内。
实施例
本发明实施例提供一种显示装置， 如图 2所示， 该显示装置包括： 相互对盒 的第一 反 30和第二 反 40, 第一 _ί ^反 30包括： 第一电极层 32, 第二 反 40包 括： 第二电极层 42; 所述第一基板 30还包括： 第三电极层 33, 设置在第一电极 层 32的远离第二基板 40的一侧（即第一电极层 32的上方）， 且， 第三电极层 33与 第一电极层 32之间夹设有绝缘层 34; 第三电极层 33与第二电极层 42电连接。
现有显示装置中， 用于产生驱动电场的第一、 第二电极层分别位于彩膜、 阵列极板上， 距离较远， Cst比较小， 适合高频驱动； 而本发明实施例提供的 显示装置， 在第一 反 30上设置有隔着绝缘层 34的第一电极层 32和第三电极层 33; 并且， 将远离第二基板 40的第三电极层 33还与第二电极层 42电连接， 这样， 第二 反40上的第二电极层 42与第一电极层 32形成第一电容 Cist,第一电极层 32 与第三电极层 33形成第二电容 C2st, 显示装置的存储电容 Cst实际为 Clst+ C2st。 因此， 与现有技术相比， 本实施例提供的显示装置存储电容大， 适合低频驱动。
另外， 现有技术中， 实现高频驱动时为了使充电率符合设计要求， 需 设计小的像素电极以减少存储电容 Cst, 但缺点是， 高频驱动时像素电极小， 开口率也会相应减小。 而本发明实施例提供的显示装置， 如果采用高频驱动时， 可以断开第三电极层 33与第二电极层 42的电连接， 从而减少存储电容 Cst以保证 充电率， 而开口率并不会因此减少。 例如， 在本实施例中， 可以针对整个显示 装置在第三电极层 33与第二电极层 42之间提供控制开关（图中未示出）， 以便在 高频驱动和低频驱动之间切换时， 基于控制信号使所述控制开关断开或闭合， 以改变存储电容 Cst, 同时开口率不发生变化。
其中优选地， 本实施例第一基板 30为彩膜基板， 绝缘层 34为彩膜层。 如图 2 所示， 在本实施例的第一种具体实施方式中， 彩膜层设置在第一电极层 32和第 三电极层 33之间， 作为绝缘层使第一电极层 32和第三电极层 33隔开； 当然， 也 可以分别单独设置彩膜层和绝缘层， 例如， 第一电极层 32、 绝缘层和第三电极 层 33依次设置构成三明治式夹层结构， 彩膜层 2位于夹层结构之上或者之下。
所述的彩膜层一般可具体包括： 黑矩阵， 以及由黑矩阵隔开的色阻块。 对 于常见的 RGB (红 /绿 /蓝）混色方案， 一个像素区域一般包括 R/G B (红 /绿 /蓝） 三个色阻块。 除常见的 RGB (红 /绿 /蓝）混色方案之外， 本发明技术方案还可用 于其它混色方案， 例如 RGBY (红 /绿 /蓝 /黄）、 RGBW (红 /绿 /蓝 /白）混色方案。
需要进一步详细说明的是， 在本实施例的第一种具体实施方式中， 第一基 板 30上的第一电极层 32为公共电极层， 设置有板式的公共电极； 第二基板 40为 阵列 H, 第二基板 40上的第二电极层 42与第一 反 30上的第三电极层 33电连 接， 二者均为像素电极层， 其中， 第二电极层 42设置有狭缝状的像素电极， 第 三电极层 33设置有板式的像素电极。
本实施例对彩膜基板的结构进行了改进， 在彩膜层 +透明导电膜的结构中再 多形成一层透明导电膜， 并且将新增透明导电膜（即第三电极层）与阵列基板 的像素电极层电连接， 从而使显示装置的存储电容增大， 适合低频驱动。 本发明实施例对第三电极层 33与第二电极层 42相连接的实现方式不做限 定， 可以是本领域技术人员所熟知的任意实现方式。 但优选地， 本实施例可将 第三电极层 33通过具有导电性的隔垫物与第二电极层 42相连， 所述隔垫物设置 在第一 _ί ^反 30与第二 反 40之间， 用于维持第一 _ί ^反 30和第二 反 40的间距。
如图 3所示， 为本实施例的第二种具体实施方式， 第一基板 30设置有贯穿第 一电极层 32及绝缘层 34 (如彩膜层）的过孔 35, 隔垫物 50的一端穿过过孔 35连 接到第三电极层 33; 第二基板 40上设置有与像素电极（第二电极层 42为像素电 极层）相连的薄膜晶体管， 在薄膜晶体管的漏极上方设置漏极过孔 44, 隔垫物 50的另一端穿过漏极过孔 44与薄膜晶体管的漏极相连。 所述隔垫物 50具有导电 性， 从而将第三电极层 33与像素电极连接在一起， 第二基板上的像素电极与第 三电极层 33形成第一电容 Cist, 第一电极层 32与第三电极层 33形成第二电容
C2st, 第一电容 Cist与第二电容 C2st并连， 共同形成存储电容 Clst+C2st, 因此， 本实施例所述显示装置的存储电容增大为 Clst+C2st, 适合低频驱动。
其中， 所述第一电极层 32、 第二电极层 42和第三电极层 33均为透明导电膜， 常见的透明导电膜的材料有： 氧化铟锡（indium tin oxide, ITO)、 氧化锌（ΖηΟ)、 氧化锡 (Sn02)、 氧化锌掺铝 ( AZO )和 FTO (氧化锡掺氟）。
此外， 因显示区域电极层的总厚度越薄透射率越好， 现有技术中只存在两 层电极层， 而本发明实施例在第一基板上额外增加了第三电极层， 因此， 需要 通过减小各电极层的厚度， 才可使显示装置整体的透射率不会因额外增加的第 三电极层而降低。
一般而言， 现有技术形成板式电极时电极层的厚度一般约 400埃， 形成狭缝 电极时电极层的厚度一般约 600埃。 因此， 本实施例第一电极层、 第二电极层和 第三电极层的总厚度小于 1000埃， 一般即可保证显示装置整体的透射率不降低。
综上所述， 本发明实施例所述显示装置存储电容大， 适合低频驱动； 此外 在实现高频驱动时， 不会为了保证充电率而导致开口率减少。 所述的显示装置 可以为： 液晶面板、 电子纸、 OLED面板、 手机、 平板电脑、 电视机、 显示器、 笔记本电脑、 数码相框、 导航仪等任何具有显示功能的产品或部件。
所述显示装置制备方法与现有技术大致相同， 包括： 第一 反制程； 第二 基板制程； 以及， 第一基板与第二基板对盒制程， 只是所述第一 _ί ^反制程增加 一形成透明导电膜的工序， 具体如下， 包括：
步骤一、 在基板形成第三电极层；
步骤二、 在设置有所述第三电极层的基板上， 形成绝缘层；
步骤三、 在设置有所述第三电极层和绝缘层的基板上， 形成第一电极层， 并通过构图工艺形成过孔， 所述过孔贯穿所述第一电极层及绝缘层。
本实施例所述第一 反制程， 在彩膜层 +透明导电膜的结构中再多形成一层 透明导电膜， 并且利用导电性隔垫物将新增透明导电膜（即第三电极层）与第 二基板的第二电极层相连接。 与现有的设计理念不同， 本实施例从设计初开始 重点放在低频驱动上， 可同时满足低频驱动和高频驱动， 并且在高频驱动的情 况下不使开口率降低。
需要说明的是， 在不冲突的前提下， 本发明实施例中的各项技术特征可以 任意组合使用。 以上所述， 仅为本发明的具体实施方式， 但本发明的保护范围并不局限于 此， 任何熟悉本技术领域的技术人员在本发明揭露的技术范围内， 可轻易想到 的变化或替换， 都应涵盖在本发明的保护范围之内。 因此， 本发明的保护范围 应该以权利要求的保护范围为准。

Claims

权 利 要 求 书
1、 一种显示装置， 包括： 相互对盒的第一基板和第二基板， 所述第一 反 包括： 第一电极层， 所述第二基板包括： 第二电极层， 其特征在于， 所述第一 反还包括：
第三电极层， 设置在所述第一电极层的远离所述第二基板的一侧， 且， 所 述第三电极层与所述第一电极层之间夹设有绝缘层；
所述第三电极层与所述第二电极层电连接。
2、 根据权利要求 1所述的显示装置， 其特征在于， 在所述第三电极层与所 述第二电极层之间设置有开关， 并且所述开关在所述显示装置进行高频驱动时 断开。
3、 根据权利要求 1所述的显示装置， 其特征在于， 所述第一基板为彩膜基 板， 所述绝缘层为彩膜层。
4、 根据权利要求 3所述的显示装置， 其特征在于， 所述彩膜层包括： 黑矩 阵， 以及由所述黑矩阵隔开的色阻块。
5、 根据权利要求 1所述的显示装置， 其特征在于，
还包括具有导电性的隔垫物， 所述第三电极层通过所述隔垫物与所述第二 电极层电连接。
6、 根据权利要求 5所述的显示装置， 其特征在于，
所述第一基板设置有贯穿所述第一电极层及所述绝缘层的过孔， 所述隔垫 物穿过所述过孔连接到所述第三电极层。
7、 根据权利要求 1-6任一项所述的显示装置， 其特征在于，
所述第二电极层设置有狭缝电极。
8、 根据权利要求 7所述的显示装置， 其特征在于，
所述第二电极层为像素电极层， 所述狭缝电极为像素电极。
9、 根据权利要求 8所述的显示装置， 其特征在于， 所述第二基板上还设置 与所述像素电极相连的薄膜晶体管；
所述第一电极层通过所述隔垫物与所述薄膜晶体管的漏极相连。
10、 根据权利要求 1所述的显示装置， 其特征在于，
所述第一电极层、 所述第二电极层和所述第三电极层均为透明导电膜。
11、 根据权利要求 1所述的显示装置， 其特征在于，
所述第一电极层、 所述第二电极层和所述第三电极层的总厚度小于 1000埃。
PCT/CN2014/076233 2013-12-10 2014-04-25 显示装置 Ceased WO2015085698A1 (zh)

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103676356B (zh) * 2013-12-10 2016-04-27 京东方科技集团股份有限公司 显示装置
CN104298034B (zh) * 2014-09-22 2018-07-17 京东方科技集团股份有限公司 一种显示面板
CN113064305A (zh) * 2021-05-08 2021-07-02 厦门技师学院(厦门市高级技工学校、厦门市高技能人才公共实训服务中心、厦门市劳动保护宣传教育中心) 一种显示面板
CN114371563B (zh) * 2021-12-23 2023-10-27 长沙惠科光电有限公司 显示面板及显示面板的制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101997004A (zh) * 2009-08-07 2011-03-30 株式会社半导体能源研究所 半导体器件及其制造方法
US20110151618A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN202631914U (zh) * 2012-06-11 2012-12-26 京东方科技集团股份有限公司 一种阵列基板及显示装置
CN103365005A (zh) * 2012-03-30 2013-10-23 群康科技(深圳)有限公司 阵列基板结构、阵列基板结构的制造方法与显示面板
CN103676356A (zh) * 2013-12-10 2014-03-26 京东方科技集团股份有限公司 显示装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008139656A1 (ja) * 2007-05-11 2008-11-20 Sharp Kabushiki Kaisha 液晶表示装置
KR100920483B1 (ko) * 2007-07-20 2009-10-08 엘지디스플레이 주식회사 액정표시장치용 어레이 기판 및 그 제조방법
TWI371619B (en) * 2008-08-13 2012-09-01 Wintek Corp Fringe field switch lcd
RU2011120013A (ru) * 2008-11-19 2012-12-27 Шарп Кабушики Каиша Плата активной матрицы и способ ее производства, устройство и панель жидкокристаллического дисплея, способ производства и управления панелью жидкокристаллического дисплея
US8355109B2 (en) * 2009-11-24 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device comprising a liquid crystal material exhibiting a blue phase and a structure body projecting into the liquid crystal layer
WO2012073798A1 (en) * 2010-11-30 2012-06-07 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP5578132B2 (ja) * 2011-04-12 2014-08-27 凸版印刷株式会社 液晶表示装置
KR102004956B1 (ko) * 2012-08-02 2019-07-30 삼성디스플레이 주식회사 표시 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101997004A (zh) * 2009-08-07 2011-03-30 株式会社半导体能源研究所 半导体器件及其制造方法
US20110151618A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN103365005A (zh) * 2012-03-30 2013-10-23 群康科技(深圳)有限公司 阵列基板结构、阵列基板结构的制造方法与显示面板
CN202631914U (zh) * 2012-06-11 2012-12-26 京东方科技集团股份有限公司 一种阵列基板及显示装置
CN103676356A (zh) * 2013-12-10 2014-03-26 京东方科技集团股份有限公司 显示装置

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