WO2015072690A1 - 원자층 증착 장치 및 방법 - Google Patents
원자층 증착 장치 및 방법 Download PDFInfo
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- WO2015072690A1 WO2015072690A1 PCT/KR2014/010495 KR2014010495W WO2015072690A1 WO 2015072690 A1 WO2015072690 A1 WO 2015072690A1 KR 2014010495 W KR2014010495 W KR 2014010495W WO 2015072690 A1 WO2015072690 A1 WO 2015072690A1
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- atomic layer
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- layer deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Definitions
- the present invention relates to a vapor deposition reactor and a method for forming a thin film using the same, and in particular, in atomic layer deposition (hereinafter referred to as ALD), a unit process for an atomic layer deposition process capable of separating and combining upper and lower portions.
- ALD atomic layer deposition
- the efficiency of the atomic layer deposition process can be improved by connecting the import / export chambers that carry in and out the atomic layer deposition target substrate into the process chamber in a straight line with the process chamber.
- the film forming process can be performed by dividing the film thickness formed in each process chamber according to the characteristics of the thin film type and thickness, or various composite thin films such as thin film 1, thin film 2, and thin film 3
- the present invention relates to an atomic layer deposition apparatus and a method for enabling the formation of an oxide layer.
- a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or glass includes physical vapor deposition (PVD) using physical collisions such as sputtering, and chemical reaction using a chemical reaction. And chemical vapor deposition (hereinafter, referred to as CVD).
- PVD physical vapor deposition
- CVD chemical vapor deposition
- This atomic layer deposition method is similar to the general chemical vapor deposition method in that it uses a chemical reaction between gas molecules. However, unlike conventional CVD in which a plurality of gas molecules are simultaneously injected into a process chamber to deposit a reaction product generated on a substrate, an atomic layer deposition method is heated by injecting a gas containing one source material into the process chamber. The difference is that the product is deposited by chemical reaction between the source materials at the substrate surface by chemisorbing to the substrate and then injecting a gas containing another source material into the process chamber.
- the atomic layer deposition method described above is a thin film encapsulation of an AMOLED (Active Matrix Organic Light Emitting Diodes) display, a barrier film of a flexible substrate, a solar buffer layer, a ferroelectric for semiconductors (high) -k) can be used to form high dielectric materials for capacitors or aluminum (Al), copper (Cu) wiring diffusion barriers (TiN, TaN, etc.) and the like.
- AMOLED Active Matrix Organic Light Emitting Diodes
- a single-sheet, batch-type, and scan-type small reactor which has been used in Plasma Enhanced Chemical Vapor Deposition (PECVD), is transported on a substrate or vice versa.
- PECVD Plasma Enhanced Chemical Vapor Deposition
- the single sheet method is a process proceeds after the input of one substrate, the moving susceptor for the import / export and heating of the substrate, the diffuser (mainstream showerhead type) for the process gas input and exhaust.
- the chamber is very thick to prevent deformation of the process chamber and the periphery according to the external atmospheric pressure during vacuum formation. Since there is an enormous increase in productivity, there is a problem in that the productivity is significantly reduced due to the rapid increase in the consumption of the raw material precursor and the reaction precursor, the increase in the maintenance cost, and the increase in the process time due to the increase in the adsorption-purge-reaction-purge time.
- the batch-type method of simultaneously processing a plurality of substrates is applied to a plurality of substrates in order to solve the increase in maintenance cost and low productivity due to the large volume of the precursor precursor and the reaction precursor due to the large volume of the conventional atomic layer deposition equipment.
- the process is carried out simultaneously.
- this batch type is partially applied to the solar cell process, there is a problem of simultaneous film formation on the back surface as well as the front surface of the substrate, uniformity and reproducibility of the thin film on multiple substrates. There is a problem that must be done.
- the scan-type small reactor method is a method in which a plurality of small reactors corresponding to the length of one side of the substrate in the vacuum chamber are arranged to reciprocate and form a substrate or a small reactor, and is applied to some display thin film encapsulation processes. It is difficult to control the gas flow perfectly between the substrate and the small reactor, and it is difficult to clearly separate the precursor precursor and the reactant precursor, causing a particle issue.
- a plurality of unit process chambers for the atomic layer deposition process capable of separating and combining the upper and lower portions are arranged in a stacked form, and an import / export chamber for importing and exporting the atomic layer deposition target substrate into the process chamber is provided.
- An object of the present invention is to provide an atomic layer deposition technique capable of forming various composite thin films, such as 3.
- the present invention as described above is an atomic layer deposition apparatus, comprising an upper process chamber and a lower process chamber, and when loading or unloading a substrate to be subjected to an atomic layer deposition process, the upper process chamber and the lower process chamber are separated from each other.
- the upper process chamber and the lower process chamber are combined to form a closed reaction space, a vacuum for supporting the process chamber and maintaining the space where the process chamber is located in a vacuum state
- a chamber connected to the vacuum chamber in a straight line shape, an import chamber for bringing the substrate into the process chamber using driving means for moving the substrate up, down, left and right, and connected to the vacuum chamber in a straight line shape;
- an export chamber for carrying out the substrate on which the atomic layer deposition process is performed from the process chamber by using the driving means.
- Group lower process chamber and from the chamber to bring the substrate characterized in that it comprises a transfer part for supporting the said substrate brought into the process chamber, and transferring the support substrate in the lateral direction.
- the present invention is an atomic layer deposition apparatus, comprising an upper process chamber and a lower process chamber, the upper process chamber and the lower process chamber is separated when loading or unloading the substrate to be atomic layer deposition process, During the deposition process, at least two process chambers in which the upper process chamber and the lower process chamber are combined to form a closed reaction space, and the process chamber are supported in a vertically stacked manner, and the process chamber A vacuum chamber for maintaining a stacked space in a vacuum state, and one of the process chambers mounted in the vacuum chamber by using a driving means connected to the vacuum chamber in a straight line shape and transferring the substrate up, down, left, and right.
- An inlet chamber for carrying in the substrate the vacuum chamber being connected to the vacuum chamber in a straight line shape, and using the driving means; And a carrying-out chamber for carrying out the substrate on which the atomic layer deposition process is performed from the lower process chamber, wherein the lower process chamber supports the substrate loaded into the process chamber from the loading chamber and transfers the supported substrate in the left-right direction. It characterized in that it comprises a substrate transfer portion to make.
- the substrate is provided with a first buffer chamber for providing the substrate to the loading chamber by adjusting the internal pressure to a pressure set in the process chamber, and the discharge chamber and It is connected in a date form, characterized in that provided with a second buffer chamber for receiving and waiting for the substrate carried out from the carrying out chamber.
- each process chamber in the vacuum chamber is an atomic layer deposition process using a direct plasma or a chamber structure for the atomic layer deposition process using heat It is characterized in that formed in one of the chamber structure or the chamber structure for the atomic layer deposition process using an indirect plasma for the chamber structure, or a combination of different chamber structures.
- the driving means may include a first driving unit capable of raising or lowering and transferring the substrate in the vertical direction and a second driving unit transferring the substrate in the left and right directions.
- the second driving unit is implemented in a roller type, characterized in that for transporting the substrate mounted on the roller to the left and right according to the rotation of the roller.
- the substrate transfer part may be separated from the lower process chamber so that the substrate is supported by the lower process chamber when the lower process chamber is raised to be coupled to the upper process chamber.
- the substrate transfer unit is implemented in a roller type, characterized in that for transporting the substrate mounted on the roller in the horizontal direction according to the rotation of the roller.
- the upper process chamber is fixed to the vacuum chamber
- the lower process chamber is characterized in that it is coupled to or separated from the upper process chamber by moving in the vertical direction.
- the upper process chamber may include a gas supply unit that supplies a process gas or purge gas to the sealed reaction space on one side of the upper process chamber, and exhausts the gas supplied to the sealed reaction space. And an exhaust part on the other upper surface of the upper process chamber.
- an electrode for plasma generation is formed on the lower surface of the upper process chamber.
- an electrode for plasma generation is formed in the introduction portion of the gas supply unit.
- the present invention is an atomic layer deposition apparatus, comprising an upper process chamber and a lower process chamber, the upper process chamber and the lower process chamber is separated when loading or unloading a substrate to be atomic layer deposition process, During the deposition process, at least two process chambers in which the upper process chamber and the lower process chamber are combined to form a closed reaction space, and the process chamber are supported in a vertically stacked manner, and the process chamber / Export chamber for importing or carrying out the substrate into one of the process chambers mounted in the vacuum chamber by using a vacuum chamber for maintaining the stacked space in a vacuum state, and a driving unit capable of moving the substrate up, down, left, and right.
- the vacuum chamber is located on both sides with respect to the import / export chamber, the lower process chamber is the import / And a substrate transfer unit configured to support the substrate to be carried into the process chamber from the carry-out chamber or to be carried out from the process chamber to the carry-in / out chamber, and to transfer the supported substrate to the left and right directions.
- each process chamber in the vacuum chamber is an atomic layer deposition process using a direct plasma or a chamber structure for the atomic layer deposition process using heat It is characterized in that formed in one of the chamber structure or the chamber structure for the atomic layer deposition process using an indirect plasma for the chamber structure, or a combination of different chamber structures.
- the present invention provides an atomic layer deposition method performed in an atomic layer deposition apparatus in which a process chamber is located in a vacuum chamber, the method comprising: introducing an atomic layer deposition target substrate into an import chamber connected to the vacuum chamber in a straight form; Bringing the substrate into the process chamber from the loading chamber through a substrate transfer part formed in the lower process chamber of the process chamber, performing an atomic layer deposition process on the substrate in the process chamber, and the atomic And carrying out the substrate on which the layer deposition process is performed, into the carrying-out chamber connected to the vacuum chamber in a straight form through the substrate transfer part.
- the present invention is an atomic layer deposition method performed in an atomic layer deposition apparatus in which at least two process chambers are stacked in a vacuum chamber, wherein the atomic layer deposition target substrate is introduced into an import chamber connected to the vacuum chamber in a straight form. And bringing the substrate into the process chamber of one of the process chambers mounted in the vacuum chamber through the substrate transfer part formed in the lower process chamber of the process chamber. Performing an atomic layer deposition process on the substrate, and carrying out the substrate on which the atomic layer deposition process is performed to the export chamber connected to the vacuum chamber in a straight form through the substrate transfer part.
- the performing of the atomic layer deposition process may include combining a lower process chamber and an upper process chamber of the process chamber to form a sealed reaction space when the substrate is loaded, and in the closed reaction space. And performing an atomic layer deposition process on the substrate mounted in the lower process chamber.
- the substrate in the step of carrying in, is characterized in that it is carried in the process chamber by a drive means for transporting the substrate in the up and down, left and right provided in the loading chamber.
- the substrate may be carried out from the process chamber to the carrying out chamber by the driving means provided in the carrying out chamber.
- the substrate transfer unit may support the substrate and transfer the supported substrate in a horizontal direction to allow the substrate to be carried in or out of the process chamber.
- the driving means may include a first driving unit capable of raising or lowering and transferring the substrate in the vertical direction and a second driving unit transferring the substrate in the left and right directions.
- the second driving unit is implemented in a roller type, characterized in that for transporting the substrate mounted on the roller to the left and right according to the rotation of the roller.
- the substrate transfer unit is implemented in a roller type, characterized in that for transporting the substrate mounted on the roller in the horizontal direction according to the rotation of the roller.
- a plurality of unit process chambers for the atomic layer deposition process capable of separating and combining the upper and lower portions are arranged in a stacked form, and the atomic layer deposition target substrate is brought into and out of the process chamber.
- the film forming process may be performed by dividing the film thickness formed in each process chamber according to the type, thickness, etc. of the thin film, or may also form various composite thin films such as thin film 1, thin film 2, and thin film 3.
- FIG. 1 is a configuration diagram of an atomic layer deposition apparatus of the date form for the atomic layer deposition process for the substrate according to an embodiment of the present invention to be performed sequentially,
- FIG. 2 is an enlarged view illustrating the process chamber of FIG. 1;
- FIG. 3A is a schematic configuration diagram of a process chamber according to an embodiment of the present invention in which process gas is injected in a cross flow or moving wave manner on a substrate;
- Figure 3b is a schematic configuration diagram capable of plasma processing as a cross-sectional structure of the process chamber according to an embodiment of the present invention
- Figure 3c is a schematic configuration diagram capable of indirect plasma processing as a cross-sectional structure of the process chamber according to an embodiment of the present invention
- Figure 4a is a configuration example of a plurality of process chambers are connected in a plurality of process chambers in accordance with an embodiment of the present invention
- Figure 4b is a diagram illustrating a configuration in which a plurality of process chambers in accordance with an embodiment of the present invention is connected to both sides of the loading / unloading chamber of the substrate in the form of a straight line.
- FIG. 1 illustrates a configuration of an atomic layer deposition apparatus in a form of a date for sequentially performing an atomic layer deposition process on a substrate according to an exemplary embodiment of the present invention.
- the atomic layer deposition apparatus of the date type includes a buffer chamber 100 and 500, an import chamber 200, a process chamber 350, and an export chamber 400.
- the buffer chamber 100 is a chamber in which the substrate 1010 to be subjected to atomic layer deposition waits. When the substrate 1010 is drawn in, the pressure of the chamber is adjusted to a predetermined pressure maintained in the process chamber 350. The prepared substrate 1010 is provided to the loading chamber 200 using the substrate transfer unit 110.
- the loading chamber 200 includes a driving means 210 that enables the substrate 1010 to be moved up, down, left, and right, and the process chamber 350 selected from the vacuum chamber 300 for the substrate 1010 drawn from the buffer chamber 100.
- the driving means 210 may be configured to include a first driver 212 for transferring the substrate 1010 in the vertical direction and a second driver 214 for transferring the substrate 1010 in the left and right directions so that the driving means 210 may be raised or lowered. Can be.
- Each process chamber 350 stacked in the vacuum chamber 300 is provided in the lower process chamber 320 to transfer the substrate 1010 when the atomic layer deposition target substrate 1010 is introduced from the import chamber 200.
- the substrate 1010 is transferred through the substrate transfer unit 330 to be positioned at a predetermined position in the lower process chamber 320, and then an atomic layer deposition process is performed.
- the substrate transfer part 330 may be implemented in, for example, a roller type, and may transfer the substrate 1010 mounted on the roller in a horizontal direction in accordance with the rotation of the roller.
- the lower process chamber 320 may be separated from the lower process chamber 320 so that the substrate 1010 is supported by the lower process chamber 320 when the lower process chamber 320 is transported in the upper direction for coupling with the upper process chamber 310. .
- the carrying-out chamber 400 includes a driving means 410 for transporting the substrate 1010 up, down, left, and right like the carry-in chamber 200.
- the carrying chamber 400 receives the completed substrate 1010 from the process chamber 350 and receives the buffer chamber. Provided at 500.
- the buffer chamber 500 may wait to receive the substrate 1010 on which the process is performed from the export chamber 400, or may provide the buffer chamber 500 to another import chamber 200 for the next process.
- the substrate 1010 for atomic layer deposition is applied to the buffer chamber 100 for substrate transfer and pressure control, and after the pressure is adjusted in the buffer chamber 100, the buffer chamber 100 It is moved to the loading chamber 200 through the substrate transfer unit 110 of.
- the substrate transfer unit 110 may be formed in a roller type as shown in FIG.
- the carry-in chamber 200 uses the driving means 210 to transfer the substrate 1010 up, down, left, and right in the vacuum chamber 300.
- the substrate 1010 is transferred to the selected process chamber 350 among the plurality of stacked process chambers 350.
- the process chamber 350 may be provided with a substrate transfer part 330 in the form of a roller capable of transferring the substrate 1010, similarly to the buffer chamber 100, and the substrate 1010 may be loaded in the chamber as the roller rotates. It may be transferred from the 200 to the process chamber 350.
- the introduction of the substrate 1010 into the process chamber 350 is transferred to the lower process chamber 320 of the process chamber 350 in the lower direction by the transfer means 340 as shown in Figure 2 the upper process chamber 310
- the lower process chamber 320 is transferred back to the upper direction by the transfer means 340, the upper process chamber 310 ) Are combined with each other.
- the necessary gas is introduced into the gas supply unit 600 as the process proceeds, and thus the substrate 1010 is introduced into the substrate 1010.
- An atomic layer deposition process can be performed.
- the substrate 1010 may be supported by the substrate transfer part 330 formed in a roller shape in a state where the upper process chamber 310 and the lower process chamber 320 are separated, and the lower process chamber 320 is When transferred to the upper direction and combined with the upper process chamber 310 may be seated in the lower process chamber 320.
- the lower process chamber 320 is transferred downward by the transfer means 340 to separate the upper process chamber 310 and the lower process chamber 320.
- the unloading operation is performed, and the substrate 1010 in which the process is completed in the unloading state is carried out from the process chamber 350 and transferred to the export chamber 400 connected to the process chamber 350 in a date form.
- the substrate 1010 transferred to the discharge chamber 400 is transferred to the buffer chamber 500 again for the next process.
- the atomic layer deposition apparatus is configured in the form of a loading chamber 200, the process chamber 350, the export chamber 400, etc. in a straight form, loading, processing, unloading operation for the substrate 1010 This in-line (sequential) progress in order to increase the productivity.
- Figure 3a is a cross-sectional structure of the process chamber according to an embodiment of the present invention shows a schematic configuration in which the process gas is injected in the cross flow or moving wave method on the substrate.
- an atomic layer includes a raw material precursor, a reaction precursor, and a purge gas to a substrate 1010 positioned inside the process chamber 350 on one side of the upper process chamber 310 through the gas supply unit 600. It is sequentially supplied according to the order of the deposition process, and has a structure to exhaust the process gas or purge gas used in each process through the gas exhaust unit 610 formed on the other side of the upper process chamber 310 have.
- the raw material precursor supplied to the gas supply unit 600 for example, trimethylaluminum (TMA), etc., passes through a solid or wavy region in which one side of the upper process chamber 310 is easily spread. It is uniformly supplied to one side of 1010, and thus adsorption reaction occurs on the upper layer surface of the substrate 1010 seated on the lower process chamber 320.
- TMA trimethylaluminum
- the purge gas for example, Ar, O2, N2, N2O, or the like is supplied to the gas supply unit 600 to discharge the raw material precursor remaining on the substrate 1010 to the gas exhaust unit 610, and then the reaction precursor. Is supplied to the gas supply unit 600 and sprayed onto the substrate 1010 to form a desired atomic layer thin film by chemical reaction between the raw material precursor and the reaction precursor.
- the purge gas is supplied to the gas supply unit 600 again to remove all remaining reactive precursors that cannot be combined with the raw material precursors on the substrate 1010.
- the atomic layer thin film on the substrate 1010 is formed to a desired thickness through a repeating process using one cycle of the above four steps.
- a susceptor function may be performed by providing a heater function to the lower process chamber 320 to enable temperature control of the substrate 1010.
- the lower portion of the lower chamber is prevented due to incomplete coupling of the process chamber 350 to prevent particle generation due to gas leakage to the outside of the process chamber 350.
- the basic sealing part 304 and the additional sealing part 302 may be configured on the outer side of the process chamber 320, and the surface contact forming part for perfect surface contact between the upper process chamber 310 and the lower process chamber 320 may be formed. It can also be configured additionally.
- the gas supply unit 600 is formed at one side of the process chamber 350 so that the process gas is sprayed in a cross flow or moving wave method on the substrate, for example.
- the gas supply unit 600 may be formed in a shower head type on the upper process chamber 310 to form a precursor sprayed perpendicular to the surface of the substrate 1010.
- Figure 3b shows a schematic configuration capable of plasma processing as a cross-sectional structure of the process chamber 350 according to an embodiment of the present invention.
- the gas is sequentially supplied in the order of the atomic layer deposition process, and the process gas or purge gas used in each process is exhausted through the gas exhaust unit 600 formed on the other side of the upper process chamber 310.
- the structure shown is shown.
- an electrode 650 is formed at the center of the upper process chamber 310 to use the plasma in the atomic layer deposition process, and the electrode 650 and the upper process chamber ( The insulating layer 640 is formed between the 310 to prevent a short between the upper process chamber 310 and the electrode 650.
- the raw material precursor is supplied to the gas supply unit 600 so as to be uniformly supplied to one side of the substrate 1010, and thus, the substrate 1010 seated in the lower process chamber 320. Adsorption reaction takes place in the upper layer.
- the purge gas is supplied to the gas supply part 600 to discharge the raw material precursor remaining on the substrate 1010 to the gas exhaust part 610.
- the reaction precursor is supplied to the gas supply unit 600 and sprayed onto the substrate 1010, and then, power is supplied to the electrode 650 to generate a plasma 670 directly onto the substrate 1010.
- the plasma 670 is supplied at a time when the raw material precursor on the substrate 1010 is completely removed by supplying a purge gas including the reaction precursor. May be formed to form a film.
- Figure 3c shows a schematic configuration capable of indirect plasma processing as a cross-sectional structure of the process chamber 1200 according to an embodiment of the present invention.
- an atomic layer deposition process of a raw material precursor, a reaction precursor, and a purge gas to a substrate 1010 located in a process chamber 350 on one side of the upper process chamber 310 outside the gas supply unit 600 is performed.
- a structure to exhaust the process gas or purge gas used in each process through the gas exhaust unit 610 formed on the other side of the upper process chamber 310.
- the gas supply unit 600 has a separate electrode 650 and an insulator 640 in order to minimize the effect on the thin film of the substrate 1010 according to the direct plasma 670 shown in FIG. 3B.
- the structure is shown.
- the raw material precursor is first supplied to the gas supply unit 600 to be uniformly supplied to one side of the substrate 1010, and thus the upper layer of the substrate 1010 seated on the lower process chamber 320. At this point, adsorption reaction occurs.
- the purge gas is supplied to the gas supply part 600 to discharge the raw material precursor remaining on the substrate 1010 to the gas exhaust part 610.
- the plasma 670 is generated by supplying power to the electrode 670 for generating plasma formed in the gas supply unit 600. Let's do it. Accordingly, radicals generated by the reaction precursor and the plasma 670 are supplied onto the substrate 1010 according to the gas flow to form an atomic layer thin film through chemical reaction between the precursor precursor and the reaction precursor by the plasma 670. Let's go.
- 4A and 4B illustrate a configuration of an atomic layer deposition apparatus having a linear form for sequentially performing an atomic layer deposition process on a substrate according to another embodiment of the present invention.
- FIG. 4A illustrates a configuration in which a plurality of process chambers are connected in a date form.
- the operation will be described with reference to FIGS. 3A to 3C and 4A.
- Substrate 1010 for atomic layer deposition is applied to the buffer chamber 100 for substrate transfer and pressure control, after the pressure is adjusted in the buffer chamber 100, the substrate transfer unit 110 of the buffer chamber 100 It is moved to the loading chamber 200 through.
- the carry-in chamber 200 is stacked in the vacuum chamber 300 by using the driving means 210 to transfer the substrate 1010 up, down, left, and right.
- the substrate 1010 is transferred to the selected process chamber 350 among the plurality of process chambers 350.
- the upper process chamber 310 and the lower process chamber 320 are coupled to each other to form an independent closed space in which the process proceeds.
- an atomic layer deposition process on the substrate 1010 may be performed.
- FIG. 4A unlike in FIG. 1, a plurality of vacuum chambers 300 in which the process chambers 350 that can perform the same process or different processes are stacked in the form of a straight line are connected to each other.
- the substrate 1010 having completed the process in the chamber 350 is carried out from the process chamber 350 and connected in a date form, and then sequentially loaded / exported into the corresponding process chamber 350 of the vacuum chamber 300. The process is carried out.
- the substrate 1010 in which the process is completed in the last process chamber 350 is carried out from the last process chamber 350 and transferred to the export chamber 400 connected to the vacuum chamber 300 in a date form.
- the substrate 1010 transferred to the chamber 400 is transferred to the buffer chamber 500 again for the next process.
- the configuration as shown in FIG. 4A can be substituted for the physical limitation of the space in which the vacuum chamber is located.
- the process efficiency can be increased by increasing the number of process chambers in the lateral direction.
- FIG. 4A a plurality of process chambers connected in a straight shape have the same structure.
- this is only an example for convenience of description, and various processes having different chamber structures as shown in FIGS. 3A to 3C.
- the process chambers of the form may be combined to form a straight form.
- the process chamber 350 is, for example, a chamber structure for an atomic layer deposition process using heat or a chamber structure or an indirect plasma for an atomic layer deposition process using direct plasma. It may be formed of one of the chamber structure for the atomic layer deposition process using, or a combination of different chamber structures.
- FIG. 4B illustrates a configuration in which a plurality of process chambers are connected to both sides of the loading / exporting chamber of the substrate in a straight line form.
- the substrate 1010 for atomic layer deposition is applied to the buffer chamber 100 for substrate transfer and pressure control, and after the pressure is adjusted in the buffer chamber 100, the buffer chamber 100. It is moved to the loading / exporting chamber 700 through the substrate transfer unit 110 of).
- the import / export chamber 700 as described above, unlike in Figure 4a a plurality of vacuum chambers 300-1, 300-2, 300-3, 300-4, 300-5, 300- which are formed in the form of a straight line on both sides
- the substrate 1010 may be brought into each process chamber in 6), or the substrate 1010 on which an atomic layer deposition process has been performed may be carried out from the process chamber.
- FIG. 4B although the process chambers 350 are not shown in the vacuum chambers, the process chambers 350 may be provided in the same structure as in FIG. 4A.
- the loading / exporting chamber 700 when the substrate 1010 is introduced from the buffer chamber 100, the loading / exporting chamber 700 includes a plurality of vacuum chambers 300-1 and 300-connected to both sides of the loading / exporting chamber 700 in a straight line shape. 2, 300-3, 300-4, 300-5, and 300-6, the substrate 1010 is loaded into the process chamber 350 selected from the plurality of process chambers 350.
- the upper process chamber 310 and the lower process chamber 320 are coupled to each other to form an independent closed space in which the process proceeds.
- an atomic layer deposition process on the substrate may be performed.
- FIG. 4B unlike in FIG. 4A, a plurality of vacuum chambers 300-1, in which process chambers 350 capable of performing the same or different processes, are connected to both sides of the import / export chamber 700 in a straight shape, 300-2, 300-3, 300-4, 300-5, and 300-6, each process chamber 350 is when the substrate 1010 is imported from the import / export chamber 700, The atomic layer deposition process is performed on the substrate 1010 independently, and the substrate on which the process is performed is carried out to the import / export chamber 700 again.
- the process chamber 350 may be added continuously, and the film forming process may be performed by dividing the film thickness by 1 / process chamber quantity. It is also possible to form various thin films, such as thin film 1-thin film 2-thin film 3.
- the process chambers 350 located in the vacuum chambers 300-1, 300-2, 300-3, 300-4, 300-5, and 300-6 are illustrated in FIGS.
- FIGS. 3c one of the chamber structure for the atomic layer deposition process using heat, the chamber structure for the atomic layer deposition process using direct plasma, or the chamber structure for the atomic layer deposition process using indirect plasma is formed. Or a combination of different chamber structures.
- each process chamber 350 is provided with a substrate transfer part 330 capable of transferring the substrate 1010, as shown in FIG. ) May be carried into the process chamber 350 or the substrate 1010 carried out from the process chamber 350 to the loading / exporting chamber 700, and the substrate 1010 may be moved in the horizontal direction.
- the substrate 1010 on which the process is performed in each process chamber 350 is carried out from each process chamber 350 to the import / export chamber 700 and transferred to the buffer chamber 500, and the buffer chamber 500.
- the substrate 1010 transferred to) waits again for the next process.
- Such a configuration as in FIG. 4B can recover the area loss by arranging the process chambers on both sides of the import / export chamber as in FIG. 4A.
- a plurality of unit process chambers for the atomic layer deposition process capable of separating and combining the upper and lower portions are arranged in a stacked form, and the atomic layer deposition target substrate is disposed in the process chamber.
- the film forming process may be performed by dividing the film thickness formed in each process chamber according to the type, thickness, etc. of the thin film, or various composite thin films such as thin film 1, thin film 2, and thin film 3 may be formed.
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Abstract
Description
Claims (16)
- 상부 공정챔버와 하부 공정챔버를 구비하고, 원자층 증착 공정 대상 기판의 로딩 또는 언로딩 시에는 상기 상부 공정챔버와 하부 공정챔버가 분리되며, 상기 기판에 대한 증착 공정의 진행시에는 상기 상부 공정챔버와 하부 공정챔버가 결합하여 밀폐된 반응공간을 형성하는 공정챔버와,상기 공정챔버를 지지하고, 상기 공정챔버가 위치된 공간을 진공상태로 유지시키는 진공챔버와,상기 진공챔버와 일자 형태로써 연결되며, 상기 기판을 상하좌우로 이동시킬 수 있는 구동수단을 이용하여 상기 공정챔버로 상기 기판을 반입시키는 반입챔버와,상기 진공챔버와 일자 형태로써 연결되며, 상기 구동수단을 이용하여 상기 공정챔버로부터 상기 원자층 증착 공정이 수행된 기판을 반출하는 반출챔버를 포함하고,상기 하부 공정챔버는, 상기 반입챔버로부터 상기 공정챔버로 반입된 상기 기판을 지지하고, 상기 지지된 기판을 좌우 방향으로 이송시키는 기판 이송부를 구비하는 것을 특징으로 하는 원자층 증착 장치.
- 상부 공정챔버와 하부 공정챔버를 구비하고, 원자층 증착 공정 대상 기판의 로딩 또는 언로딩 시에는 상기 상부 공정챔버와 하부 공정챔버가 분리되며, 상기 기판에 대한 증착 공정의 진행시에는 상기 상부 공정챔버와 하부 공정챔버가 결합하여 밀폐된 반응공간을 형성하는 적어도 두 개 이상의 공정챔버와,상기 공정챔버를 상하 방향으로 적층된 형태로 지지하고, 상기 공정챔버가 적층된 공간을 진공상태로 유지시키는 진공챔버와,상기 진공챔버와 일자 형태로써 연결되며, 상기 기판을 상하좌우로 이송시킬 수 있는 구동수단을 이용하여 상기 진공챔버내 탑재된 상기 공정챔버 중 하나로 상기 기판을 반입시키는 반입챔버와,상기 진공챔버와 일자 형태로써 연결되며, 상기 구동수단을 이용하여 상기 공정챔버로부터 상기 원자층 증착 공정이 수행된 기판을 반출하는 반출챔버를 포함하고,상기 하부 공정챔버는, 상기 반입챔버로부터 상기 공정챔버로 반입된 상기 기판을 지지하고, 상기 지지된 기판을 좌우 방향으로 이송시키는 기판 이송부를 구비하는 것을 특징으로 하는 원자층 증착 장치.
- 제 2 항에 있어서,상기 반입챔버와 일자 형태로써 연결되며, 상기 기판이 대기하고 내부 압력을 상기 공정챔버에 설정된 압력으로 조절하여 상기 반입챔버로 상기 기판을 제공하는 제1 버퍼챔버가 구비되고,상기 반출챔버와 일자 형태로써 연결되며, 상기 반출챔버로부터 반출된 상기 기판을 제공받아 대기시키는 제2 버퍼챔버가 구비되는 것을 특징으로 하는 원자층 증착 장치.
- 제 2 항에 있어서,상기 진공챔버는,일자 형태로써 연결되는 방식으로 적어도 두 개 이상 구비되며, 상기 진공챔버내 각각의 공정챔버는 열을 이용한 원자층 증착 공정을 위한 챔버구조 또는 직접 플라즈마를 이용한 원자층 증착 공정을 위한 챔버구조 또는 간접 플라즈마를 이용한 원자층 증착 공정을 위한 챔버구조 중 하나의 챔버구조로 형성되거나, 서로 다른 챔버구조의 조합으로 형성되는 것을 특징으로 하는 원자층 증착 장치.
- 제 2 항에 있어서,상기 구동수단은,상승 또는 하강이 가능하여 상기 기판을 상하 방향으로 이송시키는 제1 구동부와 상기 기판을 좌우 방향으로 이송시키는 제2 구동부를 포함하는 것을 특징으로 하는 원자층 증착 장치.
- 제 5 항에 있어서,상기 제2 구동부는,롤러 타입으로 구현되어 상기 롤러의 회전에 따라 상기 롤러위에 탑재된 상기 기판을 좌우로 이송시키는 것을 특징으로 하는 원자층 증착 장치.
- 제 2 항에 있어서,상기 기판 이송부는,상기 하부 공정챔버가 상기 상부 공정챔버와의 결합을 위해 상부 방향으로 이송시 상기 기판이 상기 하부 공정챔버에 의해 지지되도록 상기 하부 공정챔버와 분리되는 것을 특징으로 하는 원자층 증착 장치.
- 제 7 항에 있어서,상기 기판 이송부는,롤러 타입으로 구현되어 상기 롤러의 회전에 따라 상기 롤러위에 탑재된 상기 기판을 좌우 방향으로 이송시키는 것을 특징으로 하는 원자층 증착 장치.
- 제 2 항에 있어서,상기 상부 공정챔버는 상기 진공챔버에 고정되며, 상기 하부 공정챔버는 상하방향으로 이동하여 상기 상부 공정챔버와 결합되거나 분리되는 것을 특징으로 하는 원자층 증착 장치.
- 제 2 항에 있어서,상기 상부 공정챔버는,상기 밀폐된 반응공간에 공정가스 또는 퍼지가스를 공급하는 가스 공급부를 상기 상부 공정챔버의 일측 상부면에 구비하고,상기 밀폐된 반응공간에 공급된 가스를 배기시키는 가스 배기부를 상기 상부 공정챔버의 타측 상부면에 구비하는 것을 특징으로 하는 원자층 증착 장치.
- 제 2 항에 있어서,상기 상부 공정챔버의 하부면에 플라즈마 발생을 위한 전극이 형성되는 것을 특징으로 하는 원자층 증착 장치.
- 제 10 항에 있어서,상기 가스 공급부의 도입부에 플라즈마 발생을 위한 전극이 형성되는 것을 특징으로 하는 원자층 증착 장치.
- 상부 공정챔버와 하부 공정챔버를 구비하고, 원자층 증착 공정 대상 기판의 로딩 또는 언로딩 시에는 상기 상부 공정챔버와 하부 공정챔버가 분리되며, 상기 기판에 대한 증착 공정의 진행시에는 상기 상부 공정챔버와 하부 공정챔버가 결합하여 밀폐된 반응공간을 형성하는 적어도 두 개 이상의 공정챔버와,상기 공정챔버를 상하 방향으로 적층된 형태로 지지하고, 상기 공정챔버가 적층된 공간을 진공상태로 유지시키는 진공챔버와,상기 기판을 상하좌우로 이동시킬 수 있는 구동부를 이용하여 상기 진공챔버내 탑재된 상기 공정챔버 중 하나로 상기 기판을 반입 또는 반출시키는 반입/반출 챔버를 포함하고,상기 진공챔버는 상기 반입/반출 챔버를 중심으로 양측에 위치되며, 상기 하부 공정챔버는 상기 반입/반출 챔버로부터 상기 공정챔버로 반입되거나, 상기 공정챔버에서 상기 반입/반출 챔버로 반출되는 상기 기판을 지지하고, 상기 지지된 기판을 좌우 방향으로 이송시키는 기판 이송부를 구비하는 것을 특징으로 하는 원자층 증착 장치.
- 제 13 항에 있어서,상기 진공챔버는,일자 형태로써 연결되는 방식으로 적어도 두 개 이상 구비되며, 상기 진공챔버내 각각의 공정챔버는 열을 이용한 원자층 증착 공정을 위한 챔버구조 또는 직접 플라즈마를 이용한 원자층 증착 공정을 위한 챔버구조 또는 간접 플라즈마를 이용한 원자층 증착 공정을 위한 챔버구조 중 하나의 챔버구조로 형성되거나, 서로 다른 챔버구조의 조합으로 형성되는 것을 특징으로 하는 원자층 증착 장치.
- 진공챔버 내에 공정챔버가 위치되어 있는 원자층 증착장치에서 수행되는 원자층 증착 방법으로서,상기 진공챔버에 일자 형태로써 연결되는 반입챔버로 원자층 증착 대상 기판을 인입하는 단계와,상기 공정챔버의 하부 공정챔버에 형성되는 기판 이송부를 통해 상기 반입챔버로부터 상기 기판을 상기 공정챔버로 반입하는 단계와,상기 공정챔버에서 상기 기판에 대해 원자층 증착 공정을 수행하는 단계와,상기 원자층 증착 공정이 수행된 기판을 상기 기판 이송부를 통해 상기 진공챔버에 일자 형태로써 연결되는 반출챔버로 반출하는 단계를 포함하는 원자층 증착 방법.
- 진공챔버 내에 적어도 두 개 이상의 공정챔버가 적층되어 있는 원자층 증착장치에서 수행되는 원자층 증착 방법으로서,상기 진공챔버에 일자 형태로써 연결되는 반입챔버로 원자층 증착 대상 기판을 인입하는 단계와,상기 공정챔버의 하부 공정챔버에 형성되는 기판 이송부를 통해 상기 반입챔버로부터 상기 기판을 상기 진공챔버내 탑재된 상기 공정챔버 중 하나의 공정챔버로 반입하는 단계와,상기 공정챔버에서 상기 기판에 대해 원자층 증착 공정을 수행하는 단계와,상기 원자층 증착 공정이 수행된 기판을 상기 기판 이송부를 통해 상기 진공챔버에 일자 형태로써 연결되는 반출챔버로 반출하는 단계를 포함하는 원자층 증착 방법.
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PCT/KR2014/010495 WO2015072690A1 (ko) | 2013-11-15 | 2014-11-04 | 원자층 증착 장치 및 방법 |
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KR101672230B1 (ko) * | 2016-01-04 | 2016-11-03 | 주식회사 티이에스 | 원자층 증착 장비 |
Citations (5)
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JP2008109158A (ja) * | 2007-12-28 | 2008-05-08 | Yoshitake Ito | 基板処理装置、基板処理方法、基板の製造方法及び電子機器 |
JP2008297584A (ja) * | 2007-05-30 | 2008-12-11 | Canon Anelva Corp | 成膜装置 |
JP2011238731A (ja) * | 2010-05-10 | 2011-11-24 | Amaya Corp | 常圧気相成長装置 |
KR20120034073A (ko) * | 2009-06-07 | 2012-04-09 | 비코 인스트루먼츠 인코포레이티드 | 연속 공급 화학 기상 증착 시스템 |
KR20120140627A (ko) * | 2011-06-21 | 2012-12-31 | 도쿄엘렉트론가부시키가이샤 | 일괄식 처리 장치 |
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KR20080097832A (ko) * | 2007-05-03 | 2008-11-06 | 주식회사 에스에프에이 | 평면디스플레이용 화학 기상 증착장치 |
KR101431197B1 (ko) * | 2008-01-24 | 2014-09-17 | 삼성전자주식회사 | 원자층 증착설비 및 그의 원자층 증착방법 |
JP2013072132A (ja) * | 2011-09-29 | 2013-04-22 | Ulvac Japan Ltd | 成膜装置 |
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- 2014-11-04 CN CN201480073138.2A patent/CN105899708A/zh active Pending
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008297584A (ja) * | 2007-05-30 | 2008-12-11 | Canon Anelva Corp | 成膜装置 |
JP2008109158A (ja) * | 2007-12-28 | 2008-05-08 | Yoshitake Ito | 基板処理装置、基板処理方法、基板の製造方法及び電子機器 |
KR20120034073A (ko) * | 2009-06-07 | 2012-04-09 | 비코 인스트루먼츠 인코포레이티드 | 연속 공급 화학 기상 증착 시스템 |
JP2011238731A (ja) * | 2010-05-10 | 2011-11-24 | Amaya Corp | 常圧気相成長装置 |
KR20120140627A (ko) * | 2011-06-21 | 2012-12-31 | 도쿄엘렉트론가부시키가이샤 | 일괄식 처리 장치 |
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CN105899708A (zh) | 2016-08-24 |
KR20150056305A (ko) | 2015-05-26 |
KR101569768B1 (ko) | 2015-11-19 |
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