WO2015069452A1 - Procédés et appareil pour formation de substrat à film mince - Google Patents

Procédés et appareil pour formation de substrat à film mince Download PDF

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Publication number
WO2015069452A1
WO2015069452A1 PCT/US2014/061617 US2014061617W WO2015069452A1 WO 2015069452 A1 WO2015069452 A1 WO 2015069452A1 US 2014061617 W US2014061617 W US 2014061617W WO 2015069452 A1 WO2015069452 A1 WO 2015069452A1
Authority
WO
WIPO (PCT)
Prior art keywords
ingot
chucking
temperature
thin film
substrate support
Prior art date
Application number
PCT/US2014/061617
Other languages
English (en)
Inventor
James Gee
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Publication of WO2015069452A1 publication Critical patent/WO2015069452A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/221—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/005—Transport systems

Definitions

  • Embodiments of the invention relate to the fabrication of thin silicon film substrates.
  • Some silicon substrates for semiconductor devices are manufactured by growing a silicon ingot and slicing the ingot into substrates or "wafers".
  • the slicing process is very wasteful due to material lost during the cutting operation, sometimes referred to as kerf or kerf loss.
  • Current silicon substrate production for silicon solar cells loses around 50% of the silicon during the slicing step due to the kerf loss.
  • a technique for producing silicon films directly from the ingot without any kerf loss would eliminate this loss and make much more efficient use of the expensive high-purity silicon ingot.
  • kerfless fabrication Methods that eliminate the use of the slicing step, and thus the associated kerf loss, to produce thin silicon films are known as "kerfless" fabrication.
  • One kerfless separation technique applies a layer in tension (stressor layer) on the silicon substrate to initiate horizontal fracture and lift a film from the substrate off the ingot.
  • stressor layer For example, aluminum (Al) and silver (Ag) films fired at a high temperature may be used as the stressor layer.
  • Al aluminum
  • Ag silver
  • electroplated nickel (Ni) may be deposited near room temperature with a large internal stress.
  • the application of thin-film metal adhesion layer and electroplated plated Ni layer has high processing cost, and the Ni stressor layer needs to be removed. The net result is that thin silicon film substrate fabrication is very costly.
  • Embodiments of the present invention generally provide methods and substrate supports for the fabrication of thin silicon film substrates.
  • a method of forming thin film substrates includes supporting a bottom surface of an ingot on a chucking surface of a substrate support, applying a first chucking force to the bottom surface of the ingot sufficient to prevent the bottom surface from moving relative to the chucking surface, wherein the chucking surface is formed from a second material having a different coefficient of thermal expansion (CTE) than the first material of the ingot, and adjusting the temperature along the bottom surface of the the ingot to separate a thin film layer of the ingot along a fracture plane.
  • CTE coefficient of thermal expansion
  • a method of forming thin film substrates may include applying a first chucking force to retain a bottom surface of an ingot on a chucking surface of a substrate support, adjusting the temperature of the chucking surface and the ingot to a first temperature, applying a second chucking force to a top surface of the ingot and in same direction of the first chucking force, and selectively adjusting the temperature from the first temperature along the bottom surface of the ingot to separate a thin film layer of the ingot along a fracture plane.
  • a substrate support for use in forming thin film substrates may include a body having a chucking surface to retain a bottom surface of an ingot when disposed thereon via chucking forces, a heater disposed in the body to heat the chucking surface and the ingot, a cooling system disposed in the body to selectively cool the bottom surface of the ingot from a first side of the ingot to a second side of the ingot.
  • Figures 1A-1 F illustrate schematic cross-sectional views of an ingot and a substrate support during different stages in fabrication sequence for forming thin film substrates according to some embodiment of the invention.
  • Figure 2 depicts a flowchart of a method for forming thin-film substrates in accordance with some embodiments of the present invention.
  • Figure 3 depicts a schematic cross-sectional view of a vacuum chuck according to some embodiment of the invention.
  • Figure 4 depicts a schematic cross-sectional view of an electrostatic chuck according to some embodiment of the invention.
  • Embodiments of the present invention generally provide methods and apparatus to efficiently exfoliate/peel thin layers of a material from an ingot of the material without the use of sawing or cutting of the material (i.e., kerfless film formation).
  • the exfoliated thin layers of material may be used as substrates in the manufacture of semiconductor devices.
  • thin silicon films may be processed into solar cells, and the like.
  • materials other than, or in addition to, silicon may be used, such as, for example, germanium, gallium arsenide, sapphire, and the like.
  • Embodiments of the kerfless thin-film substrate formation described herein advantageously do not require a stressor layer material for removing the thin-film layer from the ingot, described above, thereby reducing process steps and cost, as well enhancing control over the removed thin-film layer.
  • Figures 1A-1 F illustrate schematic cross-sectional views of an ingot 102 and a thin-film formation apparatus during different stages in fabrication sequence for forming thin film substrates according to some embodiments of the invention.
  • Figure 2 depicts a flowchart of a method 200 for forming thin-film substrates in accordance with some embodiments of the present invention.
  • Figures 1A-1 F will be described in conjunction with the method 200 of Figure 2 for forming thin-film substrates below.
  • the ingot 102 includes a side surface 104 and a bottom surface 106.
  • the ingot 102 may be a block of material that the thin-film substrate is to be formed from.
  • the ingot 102 may be a rectangular block of material or a circular disk of material from which the thin-film substrate is to be formed.
  • layers of the ingot 102 will be removed. The layers that are removed will be used, for example, as the thin-film substrates in the manufacture of semiconductor devices.
  • the materials that ingot 102 may be formed from may include, but are not limited to, monocrystalline silicon, multicrystalline silicon, germanium, GaAs, SiC, sapphire, and the like.
  • the thickness of the ingot 102 may be about 0.5 mm to about 200 mm.
  • the ingot 102 may be reused, and additional thin-film substrates formed from the ingot, until the thickness of the ingot is no longer suitable to remove additional thin-film substrate layers off of the ingot 102.
  • the thin-film formation apparatus 100 includes a substrate support 1 10 having a chucking support surface 1 12 to support the ingot 102.
  • the substrate support 1 10 includes a retention mechanism, such as a vacuum chuck (as shown and described in Figure 3) or an electrostatic chuck (as shown and described in Figure 4) to secure the ingot 102 to the thin-film formation apparatus 100.
  • the substrate support 1 10 generally includes a body 1 14 having a heater 1 16 and cooling device 122 disposed therein.
  • a shaft 120 may be provided for supporting the body 1 14.
  • the body 1 14 may be made out of any materials suitable to withstand processing conditions, such as copper, aluminum nitride, aluminum oxide, stainless steel, aluminum, pyrolytic boron nitride, or the like.
  • the material of the body 1 14 and chucking support surface 1 12 are selected such that the chucking support surface 1 12 and the ingot 102 have different coefficients of thermal expansion (CTE).
  • the body 1 14 has a substantially planar chucking support surface 1 12 for supporting a substrate thereupon.
  • the inventors have observed that by allowing the chucking support surface 1 12 to have a slight radius, such that the center of the chucking support surface 1 12 is raised relative to the ends of the chucking support surface 1 12, fracture initiation of the ingot 102 and/or dechucking/lift-off of the thin-film substrate from the chucking support surface 1 12 may be improved.
  • the chucking support surface 1 12 may have a radius of about 3 meters to about 30 meters.
  • the heater 1 16 generally comprises one or more resistive elements embedded in the body 1 14.
  • the resistive elements may be independently controllable to create a plurality of heater zones.
  • a temperature indicator 1 15 may be provided to monitor the processing temperature.
  • the temperature indicator can be a thermocouple, positioned such that it provides data correlating to the temperature at the chucking support surface 1 12 (or at the surface of a substrate disposed thereon).
  • the heater 1 16 and temperature indicator 1 15 may be coupled to a controller 1 18 via conduit 1 17 to control the operation of the heater 1 16 during processing.
  • a thermocouple or other temperature measurement metrology may also be used to monitor the temperature of the ingot 104.
  • the cooling device 122 may include various ways to cool the bottom surface of the ingot, such as for example, one or more cooling channels or cooling elements that may be independently controllable to create cooling zones.
  • the cooling device 122 may include thermoelectric coolers.
  • the cooling device 122 may be controlled such that cooling may be selectively initiated on one end of the bottom surface of the ingot 102, and progress to the opposite end of the bottom surface of the ingot 102.
  • the coolant device 122 may be coupled to a coolant source 124 via a conduit 123 to circulate coolant from the coolant source 124 through the coolant channels.
  • the coolant device 122 may include multiple cooling zones, wherein the cooling zones may be independently controlled by a controller (e.g., controller 1 18 or a separate controller). Although depicted as being disposed above the heater 1 16, the cooling device 122 may alternatively be disposed beneath the heater 1 16 or interspersed with the heater 1 16. Alternatively, the ingot 104 could be heated directly with an external heater and the substrate support 1 10 would only include the cooling device 122.
  • a controller e.g., controller 1 18 or a separate controller
  • the shaft 120 may have one or more openings 302 (or other mechanism, such as tubes, hoses, or the like) that fluidly couple chucking holes 304 disposed on the chucking support surface 1 12 to a vacuum system 308 via conduits 310.
  • vacuum channels 306 may be fluidly coupled to chucking holes 304. Accordingly, in operation, a substrate may be disposed on the chucking support surface 1 12 of the substrate support 1 10 and retained thereon by application and maintenance of vacuum pressure within the vacuum channels 306 via the chucking holes 304.
  • the ingot 102 may be disposed on the chucking support surface 1 12 of the substrate support 1 10 and retained thereon by application and maintenance of vacuum pressure within the chucking holes.
  • the shaft 120 further comprises a central passageway to facilitate routing of facilities or connectors to the body 1 14 of substrate support 1 10.
  • an electrode 402 may be provided within the body 1 14 and coupled to a power source 404 (such as a DC power supply) to produce electrostatic forces to retain the ingot 102 to the chucking support surface 1 12.
  • a power source 404 such as a DC power supply
  • the method 200 begins at 202 and proceeds to 204 where an ingot (e.g., ingot 102 shown in Figure 1A) of a selected material is formed.
  • a fracture initiation crack 108 may optionally be formed along the outer surface of the ingot 102 at 206 of method 200.
  • the fracture initiation crack 108 may be formed on one edge of the ingot, such as for example, surface 104. In other embodiments, the fracture initiation crack 108 may be formed about a plurality of sides, including the entire perimeter of ingot 102. In embodiments where the ingot is round, the fracture initiation crack may be formed around the cylinder surface.
  • the fracture initiation crack may be formed with laser ablation, electrical discharge machining (EDM), or by dicing a groove.
  • the fracture initiation crack 108 may be formed at a distance from the bottom surface 106 of the ingot 102 selected to produce a thin-film substrate of a desired thickness.
  • the fracture initiation crack 108 may be formed about 30 microns to about 1000 microns above the bottom surface 106 of the ingot 102.
  • the fracture initiation crack 108 may extend into the ingot 102 (i.e., depth of the crack) by about 10 microns to about 200 microns.
  • the ingot 102 is placed on a chucking surface 1 12 of the substrate support 1 10.
  • the ingot 102 is at room temperature when it is placed on the chucking surface 1 12.
  • the ingot 102 may be heated or cooled prior to placing it on the chucking surface 1 12.
  • the ingot is kept at an elevated temperature and only the chuck is actively heated and cooled.
  • a weak chucking force 130 is optionally applied to hold the ingot 102 on the chucking surface 1 12 as shown in Figure 1 B.
  • a weak chucking force is a force sufficient to hold the ingot on the substrate support while allowing mating surfaces of the ingot and the substrate support (i.e., the bottom 106 and the chucking surface 1 12) to slip or move relative to each other.
  • the chucking forces 130 applied are vacuum chucking forces.
  • the chucking forces 130 applied are electrostatic chucking forces.
  • the weak chucking force 130 may not be applied if the ingot can be secured by other methods, or if the ingot does to move during heating.
  • the chucking surface 1 12 and the ingot 102 are heated to a first temperature by heater 1 16 (e.g., by heat 132) as shown in Figure 1 C.
  • the temperature that the chucking surface 1 12 and the ingot 102 are heated to may depend on the material, and associated material properties, that the body 1 14 and the ingot 102 are made of. In some embodiments, the temperature would need to be raised such that the fracture strength of the ingot material is reached.
  • the body 1 14 and chucking surface 1 12 are made from copper having a coefficient of thermal expansion (CTE) equal to about 16 ppm/K, and the ingot 102 is formed on silicon, the temperature would need to be raised by about 100°C ( ⁇ ) to reach the fracture strength of silicon.
  • CTE coefficient of thermal expansion
  • the silicon ingot 102 was placed on the chucking surface 1 12 at room temperature of about 30°C, the total temperature the ingot 102 and chucking surface 1 12 would have to be heated to about 130°C.
  • a large tensile stress is applied to the surface of the silicon ingot due to the CTE mismatch after securing the silicon to the chuck and cooling the ingot and chuck back to room temperature.
  • Exfoliation of a thin layer from the ingot occurs when the internal stress exceeds the fracture strength of the ingot material.
  • the internal stress of a silicon ingot gets above the stress fracture threshold for silicon, exfoliation will occur.
  • a smaller ⁇ may be used since the radius of the chucking surface 1 12 would help create tensile stress within the ingot 102.
  • the change in temperature ⁇ described above depends upon the film thickness desired and on the material properties of the substrate support 1 10 relative to the ingot. Typical ⁇ values may be about 25 degrees C to about 200 degrees C for ingot materials such as silicon, germanium, gallium arsenide, sapphire, and the like.
  • the ingot 102 may be separately heated via external heating devices and placed on the chucking support surface 1 12. That is, the ingot might be directly heated (inductively or convectively) to an elevated temperature and only the temperature of the chucking support surface 1 12 is cycled. Specifically, the ingot might have a high mass and therefore require a lot of time to heat and cool. Therefore, it may be more efficient in some embodiments to externally heat the ingot prior to being placed on the chucking support surface 1 12.
  • a strong chucking force is a force sufficient to hold the ingot on the substrate support and not allowing mating surfaces of the ingot and the substrate support (i.e., the bottom 106 and the chucking support surface 1 12) to slip or move relative to each other.
  • the strong chucking forces 134 bond the bottom surface of the ingot 102 and the chucking support surface 1 12 with substantially zero CTE stress at the first heated temperature.
  • an additional chucking force may be applied to a top surface of the ignot 102 in a direction to augment that of the strong chucking forces 134 to assist in exfoliation of the thin-film layer and ingot 102.
  • a force could be applied, for example, by a mechanical press.
  • the temperature of the bottom surface 106 of the ingot 102 is selectively adjusted from the first temperature to another temperature to separate the thin-film layer from the ingot 102 along fracture plane 140, as shown in Figure 1 E.
  • the temperature is selectively adjusted while the strong chucking forces 134 are still applied to prevent slippage between the bottom 106 of the ingot 102 and the chucking support surface 1 12.
  • selectively adjusting the temperature, indicated by cooling lines 141 , from the first temperature along the bottom surface includes cooling of the bottom surface of ingot starting from the first side of the ingot with the facture initiation crack.
  • selective or active cooling of the ingot along the bottom surface of the ingot controls fracture plane initiation and direction.
  • the thickness of the thin film layer may be controlled by the first temperature of ingot and chucking surface.
  • selectively cooling the bottom surface 106 of the ingot 102 will initiate fracture along fracture initiation crack 108.
  • the remaining portion of the ingot 102' is removed completely, as shown in Figure 1 F.
  • the remaining portion of the ingot 102' may be reused in the process described above to remove additional thin-film substrate layers to be used in semiconductor manufacturing process.
  • the chucking forces are removed (i.e., dechucking) and the thin-film layer 142 is removed for use as desired, as shown in Figure 1 G.
  • the release of the chucking forces at end of process removes all stress on the thin-film layer 142. Since the temperature of the chucking support surface 1 12 and the thin-film layer 142 are typically at the same temperature after processing, the removed film is planar, or substantially planar, at all times.
  • the thin film layer 142 formed has a thickness from about 20 microns to about 200 microns. The process ends at 222.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mining & Mineral Resources (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Des modes de réalisation de la présente invention concernent généralement des procédés et des supports de substrat pour la fabrication de substrats à film mince de silicium. Dans certains modes de réalisation, un procédé de formation de substrats à film mince comprend le support d'une surface inférieure d'un lingot sur une surface de mandrinage d'un support de substrat, l'application d'une première force de mandrinage sur la surface inférieure du lingot, suffisante pour empêcher la surface inférieure de se déplacer par rapport à la surface de mandrinage, la surface de mandrinage étant formée à partir d'un second matériau qui possède un coefficient de dilatation thermique (CTE) différent de celui du premier matériau du lingot, et le réglage de la température le long de la surface inférieure du lingot pour séparer une couche de film mince du lingot le long d'un plan de fracture.
PCT/US2014/061617 2013-11-05 2014-10-21 Procédés et appareil pour formation de substrat à film mince WO2015069452A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361899901P 2013-11-05 2013-11-05
US61/899,901 2013-11-05

Publications (1)

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WO2015069452A1 true WO2015069452A1 (fr) 2015-05-14

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5863830A (en) * 1994-09-22 1999-01-26 Commissariat A L'energie Atomique Process for the production of a structure having a thin semiconductor film on a substrate
US20060115961A1 (en) * 1996-05-15 2006-06-01 Bernard Aspar Method of producing a thin layer of semiconductor material
US20090056513A1 (en) * 2006-01-24 2009-03-05 Baer Stephen C Cleaving Wafers from Silicon Crystals
US20100317140A1 (en) * 2009-05-13 2010-12-16 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
KR20130026009A (ko) * 2011-09-04 2013-03-13 포항공과대학교 산학협력단 내부 응력이 조절된 플렉서블 금속 기판과 전자소자의 제조방법, 플렉서블 전자소자 및 플렉서블 금속 기판

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5863830A (en) * 1994-09-22 1999-01-26 Commissariat A L'energie Atomique Process for the production of a structure having a thin semiconductor film on a substrate
US20060115961A1 (en) * 1996-05-15 2006-06-01 Bernard Aspar Method of producing a thin layer of semiconductor material
US20090056513A1 (en) * 2006-01-24 2009-03-05 Baer Stephen C Cleaving Wafers from Silicon Crystals
US20100317140A1 (en) * 2009-05-13 2010-12-16 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
KR20130026009A (ko) * 2011-09-04 2013-03-13 포항공과대학교 산학협력단 내부 응력이 조절된 플렉서블 금속 기판과 전자소자의 제조방법, 플렉서블 전자소자 및 플렉서블 금속 기판

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