WO2015044619A1 - Dispositif optoélectronique a diodes électroluminescentes - Google Patents
Dispositif optoélectronique a diodes électroluminescentes Download PDFInfo
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- WO2015044619A1 WO2015044619A1 PCT/FR2014/052471 FR2014052471W WO2015044619A1 WO 2015044619 A1 WO2015044619 A1 WO 2015044619A1 FR 2014052471 W FR2014052471 W FR 2014052471W WO 2015044619 A1 WO2015044619 A1 WO 2015044619A1
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- Prior art keywords
- semiconductor region
- substrate
- optoelectronic device
- semiconductor
- region
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/50—Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDs; responsive to LED life; Protective circuits
- H05B45/56—Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDs; responsive to LED life; Protective circuits involving measures to prevent abnormal temperature of the LEDs
Definitions
- the present invention relates generally to optoelectronic devices based on semiconductor materials and their manufacturing processes.
- the present invention more particularly relates to optoelectronic devices comprising light-emitting diodes formed by three-dimensional elements, in particular semiconductor microwires or nanowires.
- optoelectronic devices emitting diodes ⁇ luminescent means of devices adapted to perform the conversion of an electrical signal into electromagnetic radiation, and in particular the devices dedicated to the emission of electromagnetic radiation, in particular light.
- three-dimensional elements suitable for producing light-emitting diodes are microwires or nanowires comprising a semiconductor material based on a compound having at least one Group III element and a Group V element (for example gallium GaN), hereinafter referred to as III-V compound, or preferably comprising at least one group II element and a group VI element (for example zinc oxide ZnO), hereinafter referred to as II-VI compound.
- the three-dimensional elements, including semiconductor microwires or nanowires, of a plurality of optoelectronic devices may be formed on a substrate which is then cut to delineate individual optoelectronic devices.
- Each optoelectronic device is then placed in a housing, in particular to protect the three-dimensional elements, and the housing is fixed to a support, for example a printed circuit.
- an electronic circuit with the optoelectronic device.
- This is, for example, a control circuit of the supply of light emitting diodes, a protection circuit of the electroluminescent diodes against electrostatic discharges or a temperature detection circuit of the light emitting diodes.
- These electronic circuits are made separately from the optoelectronic device, then fixed to the support and connected to the housing.
- the bulk due to the electronic circuits associated with the optoelectronic device can be important.
- the manufacturing method of an electronic system comprising the optoelectronic device therefore comprises, in addition to the manufacturing steps of the optoelectronic device, separate steps for manufacturing the electronic circuits and steps for connecting the electronic circuits to the optoelectronic devices. These steps increase the manufacturing cost of the optoelectronic system.
- an object of an embodiment is to overcome at least in part the disadvantages of optoelectronic devices with light emitting diodes, especially with microwires or nanowires, described above and their manufacturing processes. Another object of an embodiment is to reduce the bulk of an electronic system comprising an optoelectronic device.
- Another object of an embodiment is to reduce the number of steps in the method of manufacturing an electronic system comprising an optoelectronic device.
- Another object of an embodiment is that optoelectronic LED devices can be manufactured on an industrial scale and at low cost.
- an optoelectronic device comprising:
- a first semiconductor region electrically connected to the substrate, doped with the first conductivity type or a second conductivity type opposite the first type, and more heavily doped than the substrate;
- first diodes electro luminescent ⁇ resting on the first semiconductor region the first light emitting diodes comprising wired semiconductor elements, conical or frusto-conical;
- the first semiconductor region is obtained by one or more ion implantation steps.
- the first semiconductor region is obtained by a homo-epitaxy step.
- the device further comprises a first, at least partially transparent, electrode layer covering each first light-emitting diode and a first conductive layer covering the first electrode layer around the first light-emitting diodes.
- the device further comprises at least one insulating portion extending along at least one lateral edge of the first semiconductor region.
- the device further comprises at least one second doped semiconductor region of a conductivity type opposite to the first semiconductor region and extending along at least one lateral edge of the first semiconductor region.
- the substrate is monolithic.
- the substrate is divided into a semiconductor layer, containing the first semiconductor region, and separated from the rest of the substrate by an insulating layer.
- the semiconductor layer is selected from the group consisting of silicon, germanium, silicon carbide and III-V compounds.
- the substrate is selected from a group comprising silicon, germanium, silicon carbide and III-V compounds.
- the substrate is an insulating material, for example silicon oxide or aluminum oxide.
- the dopant concentration of the substrate is less than or equal to ⁇ ⁇ atoms / cm 3 and the dopant concentration of the first semiconductor region is between 5 * 10 ⁇ and 2 * 10 ⁇ 0 atoms / cm 3 .
- the device further comprises at least one electronic component formed at least in part in the substrate.
- the electronic component is comprised in the group comprising a diode, a Zener diode, an avalanche diode, a bipolar transistor, a metal-oxide-semiconductor gate field effect transistor, a resistor, a capacitor and a capacitor.
- metal-oxide-semiconductor a capacitance metal-insulator-metal, a thyristor, a varactor, a volatile memory and a non-volatile memory.
- the device comprises: a third semiconductor region electrically connected to the substrate, doped with the first type of conductivity or a second type of conductivity opposite the first type, and more heavily doped than the substrate;
- the light-emitting diodes of the second set comprising wired, conical or frustoconical semiconductor elements
- a second electrode layer covering each second light-emitting diode and a second conductive layer covering the second electrode layer around the first light-emitting diodes, the second electrode layer or the second conductive layer being in contact with the first semiconductor region.
- the device comprises a fourth semiconductor region electrically connected to the substrate and remote from the first semiconductor region, of the same conductivity type as the first semiconductor region, more heavily doped than the substrate, and connected to an electrode of the first electroluminescent diodes.
- the device comprises a fifth semiconductor region encompassing the fourth semiconductor region.
- the fifth semiconductor region further includes the first semiconductor region.
- the device comprises:
- an eighth semiconductor region in contact with the substrate and of the same type of conductivity as the sixth semiconductor region, connected to the first semiconductor region or connected to the sixth semiconductor region;
- the ninth semiconductor region extends between the sixth and eighth semiconductor regions and is connected to the seventh semiconductor region or wherein the ninth semiconductor region extends between the first and eighth semiconductor regions, the ninth semiconductor region being connected to the seventh semiconductor region. semiconductor region.
- the device comprises an eleventh and an eleventh semiconductor regions, connected to each other, of opposite conductivity types and both separated from the first semiconductor region by at least one insulating or semiconductive portion s'. extending along at least one side edge of the first semiconductor region.
- Figures 1 to 4 are partial sectional and schematic views of embodiments of an optoelectronic device with microwires or nanowires fabricated on a semiconductor substrate;
- Figures 5 to 9 are sectional views, partial and schematic, of embodiments of an optoelectronic device comprising two sets of electro luminescent diodes ⁇ connected in series;
- Figures 10 and 11 show examples of protective circuits of a light emitting diode against electrostatic discharges;
- Figures 12, 13 and 14 are partial sectional and schematic views of embodiments of an optoelectronic device comprising a protection circuit based on one or two Zener diodes;
- FIG. 15 represents an example of a circuit for measuring the temperature
- FIG. 16 is a partial schematic sectional view of an embodiment of an optoelectronic device with microwires or nanowires further comprising a temperature detection diode;
- Figures 17, 18 and 19 are top views, partial and schematic, of optoelectronic devices representing arrangements of light emitting diodes and a temperature sensing diode;
- Figures 20 and 21 are partial sectional and schematic views of embodiments of an optoelectronic device with microwires or nanowires further comprising a bipolar transistor;
- FIG. 22 is a partial schematic sectional view of an embodiment of an optoelectronic device with microwires or nanowires formed on a plate of a substrate before cutting the substrate;
- FIG. 23 is a top view, partial and schematic, of the optoelectronic device of FIG. 22. Detailed description
- the present description relates to optoelectronic devices with three-dimensional elements, for example microwires, nanowires, conical elements or frustoconical elements.
- embodiments are described for optoelectronic devices with microfilts or nanowires.
- these embodiments can be implemented for three-dimensional elements other than microwires or nanowires, for example three-dimensional pyramid-shaped elements.
- microfil or "nanowire” denotes a three-dimensional structure of elongated shape in a preferred direction, of which at least two dimensions, called minor dimensions, are between 5 nm and 2.5 ⁇ m, preferably between 50 nm and 2.5 ⁇ m. um, the third dimension, called major dimension, being at least equal to 1 time, preferably at least 5 times and even more preferably at least 10 times, the largest of the minor dimensions.
- the minor dimensions may be less than or equal to about 1 ⁇ m, preferably between 100 nm and 1 ⁇ m, more preferably between 100 nm and 300 nm.
- the height of each microfil or nanowire may be greater than or equal to 500 nm, preferably from 1 ⁇ m to 50 ⁇ m.
- the term “wire” is used to mean “microfil or nanowire”.
- the mean line of the wire which passes through the centroids of the straight sections, in planes perpendicular to the direction preferred wire, is substantially rectilinear and is called thereafter "axis" of the wire.
- an undoped or slightly doped semiconductor substrate of a first conductivity type is used and the light-emitting diodes are produced on a heavily doped region of a second type of conductivity opposite the first type and extending into the substrate from the upper face of the substrate.
- the substrate corresponds, for example, to an undoped or slightly doped monocrystalline silicon substrate conventionally used in integrated circuit manufacturing processes.
- the polarization based electro luminescent diodes ⁇ is carried by the highly doped region which is in contact with all LEDs.
- the heavily doped region is relatively electrically isolated from the rest of the substrate.
- Other electronic components can then be made in or on this substrate in an integrated manner with the light-emitting diodes.
- the additional electronic components may correspond to pn diodes, Zener diodes, avalanche diodes, metal oxide-semiconductor field effect transistors, also called MOS transistors, bipolar transistors, resistors, metal oxide capacitors.
- FIG. 1 is a partial schematic sectional view of an embodiment of an optoelectronic device 5 made from wires as described above and adapted to the emission of electromagnetic radiation.
- FIG. 1 shows a structure comprising, from bottom to top: an undoped or slightly doped semiconductor substrate of a first conductivity type, comprising an upper face 12, preferably planar at least at the level of the light emitting diodes;
- each wire 20 being in contact with one of the seed pads 16, each wire 20 comprising a lower portion 22, height 3 ⁇ 4, in contact with the stud germination 16 and an upper portion 24 of height H3, extending the lower portion 22;
- an insulating layer 26 extending on the face 12 of the substrate 10 and on the lateral flanks of the lower portion 22 of each wire 20;
- a shell 28 comprising a stack of semiconductor layers covering each upper portion 24;
- a conductive layer 32 covering the electrode layer 30 between the wires 20 but not extending over the wires 20;
- the optoelectronic device 5 may further comprise a phosphor layer, not shown, provided on the encapsulation layer 38 or merged therewith.
- each wire 20, the germination pad 16 and the shell 28 associated is an LED light emitting diode.
- the base of the LED corresponds to the germination pad 16.
- the shell 28 comprises in particular an active layer which is the layer from which is emitted the majority of the electromagnetic radiation provided by the LED.
- the LEDs are connected in parallel and form an array of light-emitting diodes.
- the set A may comprise from a few LEDs to a thousand light emitting diodes.
- the semiconductor substrate 10 corresponds to a monolithic structure.
- the semiconductor substrate is, for example, a silicon, germanium, silicon carbide, III-V compound, such as GaN or GaAs, or a ZnO substrate.
- the substrate 10 is a monocrystalline silicon substrate.
- Substrate 10 is an undoped or weakly doped substrate with a dopant concentration of less than or equal to 5 ⁇ g / cm 3, preferably substantially equal to ⁇ 10 atoms / cm 3.
- the substrate 10 has a thickness of between 275 ⁇ m and 1.5 mm, preferably 725 ⁇ m.
- examples of P type dopants are boron (B) or indium (In) and examples of N type dopants are phosphorus (P), arsenic ( As), or antimony (Sb).
- the substrate 10 is doped with P type at the boron.
- the face 12 of the silicon substrate 10 may be a face
- Region 14 is a heavily doped region.
- the conductivity type of the region 14 is opposite to the conductivity type of the substrate 10.
- FIG. 1 there is shown a weakly doped P-type substrate 10 and a strongly doped N-type region 14.
- the dopant concentration of region 14 is between 5 * 10 ⁇ atoms / cm ⁇ and 2 * 10 ⁇ 0 atoms / cm 2, preferably between 3 * 10 ⁇ atoms / cm ⁇ and 5 * 10 ⁇ ⁇ atoms / cm ⁇ .
- the thickness of the region 14 is between 150 nm and several micrometers, preferably between 150 nm and 1 ⁇ m, more preferably between 150 nm and 400 nm.
- the germination pads 16, also called germination islands, are made of a material that promotes the growth of the yarns 20.
- a treatment may be provided to protect the lateral flanks of the seedlings and the surface of the parts of the substrate not covered by the bumps. germination to prevent growth of the yarns on the lateral flanks of the seed pads and on the surface of the parts of the substrate not covered by the seed pads.
- the treatment may comprise forming a dielectric region on the lateral flanks of the seed pads and extending on and / or in the substrate and connecting, for each pair of pads, one of the pads of the pair to the other stud of the pair, the wires not growing on the dielectric region.
- the seed pads 16 may be replaced by a seed layer covering the face 12 of the substrate 10 and extending over the region 14. A dielectric region may then be formed above the seed layer for prevent the growth of threads in unwanted areas.
- the material constituting the seed pads 16 may be a nitride, a carbide or a boride of a transition metal of column IV, V or VI of the periodic table of the elements or a combination of these compounds.
- the seed pads 16 may be made of aluminum nitride (AIN), boron (B), boron nitride (BN), titanium (Ti), titanium nitride (TiN), tantalum nitride (TaN), hafnium (Hf), hafnium nitride (HfN), niobium (Nb), niobium nitride (NbN), zirconium (Zr), zirconium borate (ZrB 2), of zirconium nitride (ZrN), in silicon carbide (SiC), nitride and tantalum carbide (TaCN), magnesium nitride in the form Mg x Ny, where x is approximately equal
- the seed pads 16 may be doped with the same type of conductivity as the region 14.
- the insulating layer 26 may be a dielectric material, such as silicon oxide (S1O2) f silicon nitride (Si x N y, where x is approximately equal to 3 and y is equal to about 4, e.g., S13N4) , in silicon oxynitride (SiO x Ny where x may be about 1/2 and y may be about 1, eg S12ON2), aluminum oxide (Al2O3), hafnium oxide (HfC ⁇ ) or diamond.
- the thickness of the insulating layer 26 is between 5 nm and 800 nm, for example equal to about 30 nm.
- the wires 20 are at least partly formed from at least one semiconductor material.
- the semiconductor material may be silicon, germanium, silicon carbide, a III-V compound, a II-VI compound or a combination thereof.
- the wires 20 may be, at least in part, formed from semiconducting materials, typically having a III-V compound, for example III-N compounds.
- group III elements include gallium (Ga), indium (In) or aluminum (Al).
- III-N compounds are GaN, AlN, InN, InGaN, AlGaN or AlInGaN.
- Other group V elements may also be used, for example, phosphorus or arsenic. In general, the elements in compound III-V can be combined with different mole fractions.
- the wires 20 may be, at least in part, formed from semiconductor materials with a compound II-VI.
- group II elements include elements of group IIA, including beryllium (Be) and magnesium (Mg) and Group IIB elements, including zinc (Zn) and cadmium (Cd).
- Group VI elements include elements of the VIA group, including oxygen (O) and tellurium (Te).
- compounds II-VI are ZnO, ZnMgO, CdZnO or CdZnMgO. In general, the elements in II-VI can be combined with different mole fractions.
- the wires 20 may comprise a dopant.
- the dopant may be chosen from the group comprising a group II P dopant, for example magnesium (Mg), zinc (Zn), cadmium (Cd ) or mercury (Hg), a group IV P-type dopant, for example carbon (C) or a group IV N-type dopant, for example silicon (Si), germanium (Ge), selenium (Se), sulfur (S), terbium (Tb) or tin (Sn).
- a group II P dopant for example magnesium (Mg), zinc (Zn), cadmium (Cd ) or mercury (Hg)
- a group IV P-type dopant for example carbon (C) or a group IV N-type dopant, for example silicon (Si), germanium (Ge), selenium (Se), sulfur (S), terbium (Tb) or tin (Sn).
- the cross section of the yarns 20 may have different shapes, such as, for example, an oval, circular or polygonal shape, in particular triangular, rectangular, square or hexagonal.
- the average diameter of each wire may be between 50 nm and 2.5 ⁇ m.
- the height H] _ of each wire 20 may be between 250 nm and 50 um.
- Each wire 20 may have an elongate semiconductor structure along an axis substantially perpendicular to the face 12.
- Each wire 20 may have a generally cylindrical shape.
- the axes of two adjacent yarns can be from 0.5 ⁇ m to 10 ⁇ m and preferably from 1.5 ⁇ m to 4 ⁇ m.
- the son 20 may be regularly distributed, in particular according to a hexagonal network.
- the lower portion 22 of each wire 20 consists mainly of compound III-N, for example doped gallium nitride of the same type as region 14, for example.
- example N type for example silicon.
- the lower portion 22 extends over a height 3 ⁇ 4 which can be between 100 nm and 25 ⁇ m.
- the upper portion 24 of each wire 20 is at least partially made of a III-N compound, for example GaN.
- the upper portion 24 may be N-type doped, possibly less strongly doped than the lower portion 22, or not be intentionally doped.
- the upper portion 24 extends over a height H3 which may be between 100 nm and 25 ⁇ m.
- the shell 28 may comprise a stack of several layers including:
- the active layer is the layer from which most of the radiation provided by the LED is emitted.
- the active layer may include containment means, such as multiple quantum wells. It consists, for example, of alternating layers of GaN and InGaN with thicknesses of 5 to 20 nm (for example
- the GaN layers may be doped, for example of the N or P type.
- the active layer may comprise a single layer of InGaN, for example with a thickness greater than 10 nm.
- the intermediate layer for example doped P-type, may correspond to a semiconductor layer or a stack of semiconductor layers and allows the formation of a PN or PIN junction, the active layer being between the intermediate layer of type P and the N-type upper portion 24 of the PN junction or PIN.
- the bonding layer may correspond to a semiconductor layer or a stack of semiconductor layers and allows the formation of an ohmic contact between the intermediate layer and the electrode 30.
- the bonding layer may be doped very thinly. strongly of the type opposite to the lower portion 22 of each wire 20, until degenerate the semiconductor layer or layers, for example doped P type at a concentration greater than or equal to 10 ⁇ 0 atoms / cm- ⁇ .
- the semiconductor layer stack may comprise an electron blocking layer formed of a ternary alloy, for example gallium aluminum nitride (AlGaN) or indium aluminum nitride (AlInN) in contact with each other. with the active layer and the intermediate layer, to ensure a good distribution of the electric carriers in the active layer.
- a ternary alloy for example gallium aluminum nitride (AlGaN) or indium aluminum nitride (AlInN) in contact with each other. with the active layer and the intermediate layer, to ensure a good distribution of the electric carriers in the active layer.
- the electrode 30 is adapted to bias the active layer of each wire 20 and let the electromagnetic radiation emitted by the LEDs LED.
- the material forming the electrode 30 may be a transparent and conductive material such as indium tin oxide (ITO), aluminum-doped zinc oxide or aluminum oxide. graphene.
- the electrode layer 30 has a thickness of between 5 nm and 200 nm, preferably between 20 nm and 50 nm.
- the conductive layer 32 preferably corresponds to a metal layer, for example aluminum, silver, copper or zinc.
- the conductive layer 32 has a thickness of between 20 nm and 1000 nm, preferably between 100 nm and 200 nm.
- the encapsulation layer 38 is made of at least partially transparent insulating material.
- the maximum thickness of the encapsulation layer 38 is between 250 nm and 50 ⁇ m so that the encapsulation layer 38 completely covers the electrode 30 at the top of the LEDs.
- the encapsulation layer 38 may be made of at least partially transparent inorganic material.
- the encapsulation layer 38 is made of silicone.
- the inorganic material is chosen from the group comprising silicon oxides of the SiO x type where x is a real number between 0 and 2, or SiOyN z where y is a real number between 0 and 2 and z is between 0 and 1 and aluminum oxides, for example Al2O3.
- the encapsulation layer 38 may be made of at least partially transparent organic material.
- the encapsulation layer 38 is an epoxy polymer.
- each light-emitting diode LED of the set A is obtained by connecting the electrode 30 to a source VI of a first reference potential and by connecting the pad 36 to a source V2 of a second reference potential.
- the first potential may be greater than the second potential and the source V2 may correspond to the ground.
- optoelectronic devices with light-emitting diodes are formed simultaneously on a plate of a semiconductor substrate.
- the number of light-emitting diodes may be different depending on the optoelectronic devices.
- the separation of optoelec ⁇ tronic devices is performed by steps of cutting the plate.
- it is a silicon wafer conventionally used in microelectronic circuit manufacturing processes, in particular based on metal oxide-oxide or MOS transistor field-effect transistors.
- An embodiment of a manufacturing method for obtaining the optoelectronic device 5 comprises the following steps:
- the region 14 can be obtained by one or more implantations of dopants in the substrate 10 or by growth by selective epitaxy of the heavily doped material on an initial support.
- the seed pads 16 can be obtained by depositing a seed layer on the face 12 and by etching portions of the seed layer to the face 12 of the substrate 10 to define the seed pads.
- the seed layer can be deposited by a chemical vapor deposition (CVD) method or an organometallic chemical vapor deposition (MOCVD), also known under the name of organometallic epitaxy in the vapor phase (or MOVPE, acronym for Metal-Organic Vapor Phase Epitaxy).
- CVD chemical vapor deposition
- MOCVD organometallic chemical vapor deposition
- MBE molecular beam epitaxy
- MBBE gas-source MBE
- MOMBE organometallic MBE
- PAMBE plasma-assisted MBE
- ALE Atomic Layer Epitaxy
- HVPE Hydride Vapor Phase Epitaxy
- ALD atomic thin-film deposition process
- evaporation or reactive sputtering may be used.
- the seed pads 16 are made of aluminum nitride, they can be substantially textured and have a preferred polarity.
- the texturing of the pads 16 can be obtained by an additional treatment carried out after the deposition of the seed layer. This is, for example, annealing under an ammonia (NH 3) stream.
- NH 3 ammonia
- the yarn 26 growth process may be a CVD, MOCVD, MBE, GSMBE, PAMBE, ALE, HVPE, ALD method.
- electrochemical processes may be used, for example, Chemical Bath Deposition (CBD), hydrothermal processes, liquid aerosol pyrolysis or electrodeposition.
- the yarn growth method may comprise the reaction in a reactor of a precursor of a group III element and a precursor of a group V element.
- precursors of Group III elements are trimethylgallium (TMGa), triethylgallium (TEGa), trimethylindium (TMIn) or trimethylaluminum (TMA1).
- group V precursors are ammonia (NH3), tertiarybutylphosphine (TBP), arsine (ASH3), or asymmetric dimethylhydrazine (UDMH).
- a precursor of a further element is added in excess in addition to the precursors of III-V compound.
- the additional element may be silicon (Si).
- An example of a precursor of silicon is silane (S1H4).
- the operating conditions of the MOCVD reactor described above are, by way of example , except that the stream of silane in the reactor is reduced, for example by a factor greater than or equal to 10, or stopped. Even when the silane stream is stopped, the upper portion 24 may be N-type doped due to the diffusion in this active portion of dopants from the adjacent passivated portions or due to the residual doping of GaN.
- the insulating layer 26 for example by conformal deposition of an insulating layer on the entire structure obtained in step (6) and etching of this layer to expose the shell 28 of each wire 20.
- the insulating layer 26 does not cover the shell 28.
- the insulating layer 26 may cover a portion of the shell 28.
- the insulating layer 26 may be made before the formation of the hull 28.
- step (8) Formation of the Conductive Layer 32, for example by Physical Vapor Deposition (PVD) Over the Overall Structure Obtained in step (8) or for example by evaporation or sputtering and etching of this layer to expose each wire 20;
- PVD Physical Vapor Deposition
- encapsulation layer 38 is made of silicone, encapsulation layer 38 may be deposited by a spin coating process, by a jet printing process, or by by a screen printing process. When the encapsulation layer 38 is an oxide, it can be deposited by CVD; and
- the region 14 is formed before the wires 20.
- the region 14 may be formed, in particular by implantation, after the wires 20.
- FIG. 2 is a partial schematic cross section of an optoelectronic device 40 according to another embodiment.
- the optoelectronic device 40 comprises all the elements of the optoelectronic device 5 shown in FIG. 1, with the difference that the monolithic substrate 10 corresponds to a multilayer structure of the silicon on insulator type or SOI (acronym for Silicon On Insulator).
- the substrate 10 comprises a layer 44 of a semiconductor material separated from a support 46 by an insulating layer 48.
- the face 12 corresponds to the upper face of the semiconductor layer 44.
- the semiconductor layer 44 may be made of the same material as the substrate 10. In particular, the semiconductor layer 44 is weakly doped. By way of example, the thickness of the semiconductor layer 44 is between 10 nm and 1 ⁇ m.
- the insulating layer 48 corresponds, for example, to an oxide or a nitride. For example, the thickness of the insulating layer 48 is between 10 nm and 300 nm.
- the support 46 may be a semiconductor or insulating material. When the support 46 corresponds to an insulating material, the insulating layer 48 and the support 46 may be merged.
- the region 14 extends in the semiconductor layer 44 from the face 12, for example over the entire thickness of the semiconductor layer 44.
- the optoelectronic device 40 has the advantage, compared to the optoelectronic device 5, to suppress the leakage currents from region 14 to support 46.
- FIG. 3 is a partial and schematic cross section of an optoelectronic device 50 according to another embodiment.
- the optoelectronic device 50 comprises all the elements of the optoelectronic device 5 shown in FIG. 1 and furthermore comprises insulating regions 52, extending at least partly in the substrate 10 at least partly around the heavily doped region. 14. Although this is not shown in FIG. 3, the insulating regions 52 may, in addition, project protruding with respect to the face 12.
- Each insulating region 52 may extend into the substrate 10 from the face 12 to a depth of between 60 nm and 800 nm, preferably 150 nm.
- the insulating regions 52 are made of silicon oxide or silicon nitride.
- the insulating regions 52 can be made by a method of forming insulation trenches of the STI type (acronym for "Shallow Trench Isolation").
- the optoelectronic device 50 has the advantage, compared to the optoelectronic device 5, of eliminating the lateral leakage currents from the region 14.
- FIG. 4 is a partial and diagrammatic section of an optoelectronic device 54 comprising both the insulating layer 48 of the optoelectronic device 40 shown in FIG. 2 and the insulating regions 52 of the optoelectronic device 50 shown in FIG. 3.
- the optoelectronic device 54 has the advantage, compared to the optoelectronic device 5, of eliminating the lateral leakage currents from the region 14 and the leakage currents of the region 14 towards the support 46.
- the polarization of the base diodes ⁇ electro luminescent LED is accomplished by the highly doped region 14 which can be electrically isolated from the substrate 10. Several highly doped regions may be made in the substrate 10, these highly doped regions being associated with separate sets of light-emitting diodes.
- FIG. 5 is a sectional view of an optoelectronic device 60 which comprises two sets Al, A2 of LEDs.
- Each set A1, A2 of light-emitting diodes may have the same structure as that shown in FIG. 1.
- the index "1" is added to the references of the elements associated with the set Al and the index "2" to references of the elements associated with the set A2.
- the bases of the electroluminescent diodes of each set A1, A2 are in contact with a strongly doped region 14.
- the highly doped region 14 ] _ associated with the set A1 of light-emitting diodes is separated by the strongly doped region 142 associated to the set A2 of light-emitting diodes by a lightly doped portion 66 of the substrate 10.
- the minimum distance separating the two regions 14 ] _, 142 highly doped adjacent is greater than 2 microns, preferably between 2 microns and 10 um.
- the set A1 of light-emitting diodes is connected in series with the set A2 of light-emitting diodes.
- the electrode 302 and the conductive layer 322 of the set A2 of light-emitting diodes DEL2 extend to the opening 34 ] to form the contact pad 36 ] of the assembly A1 and come in contact with the heavily doped region 14 ] _ of the set Al.
- FIG. 5 shows an optoelectronic device 60 comprising two sets A1, A2 of light-emitting diodes arranged in series. The number of sets of light emitting diodes arranged in series may be larger. The optoelectronic device 60 may comprise from 2 to more than 100 sets of light emitting diodes arranged in series.
- the combination of series-mounted light-emitting diode assemblies makes it possible to increase the maximum amplitude of the supply voltage applied to the sets of light-emitting diodes which is equal to the difference between the first and second reference potentials provided by the sources. VI, V2.
- the supply voltage may have a maximum amplitude greater than or equal to 6V, for example approximately 12 V, 24 V, 48 V, 110 V or 240 V.
- FIG. 6 is a sectional view of an optoelectronic device 70 according to another embodiment.
- the optoelectronic device 70 comprises all the elements of the optoelectronic device 60 shown in FIG. 5 and further comprises a heavily doped region 72 extending into the substrate 10 from the face 12 and disposed between the highly doped region 14 ]. associated with the set A1 and the heavily doped region 142 associated with the set A2.
- the heavily doped region 72 is of opposite conductivity type to said highly doped regions 14] _, 142- the doping concentration of region 72 is between 5 * 10 ⁇ atoms / cm ⁇ and 2 ⁇ 0 * 10 atoms / cm -1, preferably between 3 * 10 ⁇ atoms / cm ⁇ and 5 * 10 ⁇ ⁇ atoms / cm ⁇ .
- the region 72 improves the electrical insulation between the regions 14 !, 14 2 .
- FIG. 7 is a sectional view of an optoelectronic device 74 according to another embodiment.
- the optoelectronic device 74 comprises all the elements of the optoelectronic device 72 shown in FIG. 6 except that the heavily doped region 72 is replaced by a insulating region 76 which may be identical to the insulating region 52 described above.
- FIG 8 is a sectional view of an optoelectronic device 78 according to another embodiment.
- the optoelectronic device 78 comprises all the elements of the optoelectronic device 72, with the difference that the substrate 10 has a structure of the SOI type described above.
- the heavily doped P-type region 72 may not be present, the regions 14 being separated by a lightly doped portion of the semiconductor layer 44.
- FIG. 9 is a sectional view of an optoelectronic device 82 according to another embodiment.
- the optoelectronic device 82 comprises all the elements of the optoelectronic device 78 with the difference that the heavily doped region 72 is replaced by the insulating region 76 described above.
- the optoelectronic device may comprise additional electronic components, including diodes, zener diodes, avalanche diodes, MOS transistors and / or bipolar transistors, resistors, metal-oxide-semiconductor capabilities, also called MOS capabilities, metal-insulator-metal capabilities, also called MIM capabilities, thyristors, varactors, volatile memories, e.g. random access dynamic memories called DRAMs, non-volatile memories , for example flash memories.
- additional electronic components including diodes, zener diodes, avalanche diodes, MOS transistors and / or bipolar transistors, resistors, metal-oxide-semiconductor capabilities, also called MOS capabilities, metal-insulator-metal capabilities, also called MIM capabilities, thyristors, varactors, volatile memories, e.g. random access dynamic memories called DRAMs, non-volatile memories , for example flash memories.
- DRAMs random access dynamic memories
- the additional electronic components integrated in the substrate 10 on which the light-emitting diodes are formed are used to provide a protection circuit of electroluminescent diodes against electrostatic discharges, also called ESD (acronym for Electrostatic Discharge).
- ESD Electrostatic Discharge
- FIGS. 10 and 11 show examples of circuits 90, 91 for protecting a light-emitting diode DEL1 against electrostatic discharges.
- the light-emitting diode DEL1 may correspond to a set of light-emitting diodes connected in parallel as shown in FIG. 1.
- the light-emitting diode DEL1 may correspond to a set of light-emitting diodes connected in series as represented in FIGS. 5 to 9.
- the protection circuit 90, 91 is connected in parallel to the terminals of the LED DELL.
- the protection circuit 90, 91 provides a preferred passage for the current when an overvoltage is applied across the LEDs DEL1.
- FIG. 10 and 11 show examples of circuits 90, 91 for protecting a light-emitting diode DEL1 against electrostatic discharges.
- the light-emitting diode DEL1 may correspond to a set of light-emitting diodes connected in parallel as shown in FIG. 1.
- the protection circuit 90 comprises a Zener diode 92, the anode of which is connected to the cathode of the light-emitting diode DEL1 and whose cathode is connected to the anode of the light-emitting diode DELL.
- protection 91 comprises two zener diodes 93, 94 mounted head-to-head, the anodes of the zener diodes 93, 94 being connected to one another as shown in FIG. 11, or alternatively the cathodes of the diodes Zener being connected to each other.
- the protection circuits 90, 91 may comprise one or more than one avalanche diode.
- FIG. 12 represents an optoelectronic device
- the optoelectronic device 95 comprising an array A of light-emitting diodes as shown in Figure 1 and further comprising a protection circuit 90 as shown in Figure 10.
- the optoelectronic device 95 comprises a heavily doped region 96 of the conductivity type opposite to the region 14 and separated from the region 14 by a lightly doped portion 97 of the substrate 10.
- the region 96 extends in the substrate 10 from the face 12.
- the optoelectronic device 95 comprises a heavily doped region 98 of the same type of conductivity as the region. 14 and extending into the area
- the region 96 extends deeper into the substrate 10 than the region 98.
- An opening 99 is provided in the insulating layer 26 to expose a portion of the region 98.
- the electrode 30 and the conductive layer 32 extend to the aperture 99 to in contact with the heavily doped region 98 through the opening 99.
- An opening 100 is provided in the insulating layer 26 to expose a portion of the region 96.
- a conductive pad 101 is provided in contact with the heavily doped region 96 at through the opening 100.
- the conductive pad 101 is connected to the conductive pad 36 by unrepresented conductive elements.
- the N-type region 98 forms, with the P-type region 96, the Zener diode of the protection circuit 90.
- FIG. 13 represents an optoelectronic device 102 comprising the set A of light-emitting diodes as represented in FIG. 1 and further comprising a protection circuit 91 as represented in FIG. 11.
- the optoelectronic device 102 comprises a heavily doped region 103 of the same type of conductivity as the region 14 and separated from the region 14 by a lightly doped portion 104 of the substrate 10.
- the region 103 extends in the substrate 10 from the face 12.
- the conductive layer 105 is provided in the insulating layer 26 to expose a portion of the region 103.
- the electrode 30 and the conductive layer 32 extend to the opening 105 to contact the heavily doped region 103 through the
- the regions 14 and 103 are, for example, formed by the same ion implantation steps or the same epitaxial steps.
- the N-type regions 14 and 103 together with the P-type substrate 10 form the Zener diodes of the protection circuit 91.
- FIG. 14 represents an optoelectronic device
- one or more of the regions 14, 96, 98, 103, 107 can be obtained by a step or more of a dopant implantation step in the substrate 10 or by growth by selective epitaxy of the doped material on an initial support. In the case where these regions 14, 96, 98, 103, 107 are obtained by one or more dopant implantation steps in the substrate, they can be performed before or after the formation of the son 20.
- the additional electronic components integrated in the substrate 10 on which the light-emitting diodes are formed are used to carry out, at least partially, a circuit for detecting the temperature of the light-emitting diodes.
- FIG. 15 schematically shows the operating principle of a temperature sensing circuit.
- the circuit 110 comprises an electronic detection component 112 and a circuit 114 for measuring the voltage U across the terminals of the component 112 and / or the current I flowing through the component 112.
- the operating characteristics of the detection component 112 vary according to the temperature such that the voltage U at constant current I or the current I at constant voltage U varies as the temperature in the vicinity of detection component 112 varies.
- the detection component 112 may comprise at least one diode or at least one bipolar transistor whose base and the emitter (or the collector) are connected in common.
- the detection component 112 is made integrated to the substrate 10 in the vicinity of the set A of light-emitting diodes.
- the measuring circuit 114 may be realized by an electronic circuit distinct from the optoelectronic device or may be made, in whole or in part, in an integrated manner to the substrate 10.
- the detection component 112 being situated close to the light-emitting diodes, in particular unless a hundred micrometers typically about ten micrometers, the temperature measured by the measuring circuit 114 is representative of the actual temperature at the active layer of the light-emitting diodes. This is not the case when the sensing component 112 is part of a circuit that is distinct from the optoelectronic device. Indeed, the detection component 112 is then located several hundred micrometers of the light emitting diodes.
- FIG. 16 represents an optoelectronic device 116 comprising an array of light emitting diodes as shown in FIG. 1 and further comprising a temperature detection component 112.
- the optoelectronic device 116 further comprises a heavily doped region 118 of P type, more strongly doped than the substrate 10, separated from the region 14 by a lightly doped portion 120 of the substrate 10.
- the optoelectronic device 116 further comprises an N-type doped region 122, extending from the face 12 in region 118 of type P. Regions 118 and 122 form a PN junction which constitutes the temperature detection diode.
- An opening 124 is provided in the insulating layer 26 to expose a portion of the region 118 and an opening 126 is provided in the insulating layer 26 to expose a portion of the region 122.
- a conductive track 128 contacts the region 118 at through the opening 124 and a conductive track 130 comes into contact with the region 122 through the opening 126.
- the region 118 may be N type doped. In this case, the region 122 is doped.
- the temperature sensing component 112 can be isolated from the light-emitting diode array A by one of the isolation structures described above in connection with FIGS. 6-9.
- FIGS. 17 to 19 represent schematic top views of the optoelectronic device 116 in which the contour of the region 14 on which the set of light-emitting diodes A is formed by a dashed line and in which FIG. outline of the region 118 in which the detection component 112 is formed by a continuous line.
- the sensing component 112 is disposed along an edge of the set of light-emitting diodes.
- the detection component 112 is arranged all around the set A of light-emitting diodes.
- the signal measured by the measuring circuit 114 then advantageously makes it possible to determine the average temperature at the periphery of the set A of light-emitting diodes.
- the set A of light-emitting diodes is arranged around the detection component 112.
- the temperature sensor may, for example, be used for regulating the current flowing through the light-emitting diodes in order not to degrade their characteristics.
- the additional electronic components integrated in the substrate 10 on which the light-emitting diodes are formed are used to carry out, at least partially, a control circuit of the light-emitting diodes.
- control circuit may comprise an AC-DC converter receiving an AC voltage, for example corresponding to the AC voltage of the sector, and supplying a DC voltage which may for example be applied between the electrode 30 and the region 14.
- control circuit may comprise a voltage rectifier, a switch (English switch) or a current regulator which may for example comprise an operational amplifier.
- control circuit is a circuit for supplying current or voltage pulses used to power the light-emitting diodes. This makes it possible to reduce the heating effects of the light emitting diodes for the same average power consumed.
- the frequency and the duration of the pulses are determined so that an observer perceives a continuous luminous signal because of the retinal persistence, for example using a Pulse Width Modulator (PWM).
- PWM Pulse Width Modulator
- the control circuit may comprise a thermal protection module, which is for example formed by a temperature measuring circuit as described above in relation to FIGS. 15 to 19, associated with a PWM circuit providing voltage or current pulses whose duration is modulated according to the measured temperature, for example by using a feedback loop which can implement an operational amplifier.
- the duration of the pulses of the electrical signal can be decreased when the measured temperature exceeds a predefined value, for example 125 ° C.
- the thermal protection circuit is, for example, formed by a temperature measuring circuit, as described previously with reference to FIGS. 15 to 19, associated with a switch making it possible to cut off the electrical signal when the measured temperature exceeds a value. predefined, for example 130 ° C.
- the thermal protection circuit is, for example, formed by a temperature measuring circuit, as described previously with reference to FIGS. 15 to 19, associated with a current regulator providing a current whose intensity depends on the measurement of the current. temperature.
- All or part of the electronic components used for the realization of the control circuit can be made on the same substrate 10 on which the light-emitting diodes are formed.
- These electronic components may comprise in particular bipolar transistors.
- FIG. 20 represents a sectional view of an optoelectronic device 150 comprising an array of light-emitting diodes A as shown in FIG. 1, with the difference that the region 14 comprises a first N-type doped region 152 which extends from the face 12 and a second N-type doped region 154, which is less strongly doped than the region 152 and more strongly doped than the substrate 10, and which extends under the region 152.
- the optoelectronic device 150 further comprises a heavily doped N-type region 156 extending into the substrate 10 from the face 12 and a P-type heavily doped region 158 extending into the substrate 10 from the face 12.
- a P-type doped region 160 extends under regions 156 and 158 and connects these regions.
- the region 160 is less strongly doped than the region 158 and more heavily doped than the substrate 10.
- An N-type doped buried region 162 extends below the region 160 and the region 154 and connects these two regions.
- An opening 164 is provided in the insulating layer 26 to expose a portion of the region 158 and an opening 166 is provided in the insulating layer 26 to expose a portion of the region 156.
- a conductive track 168 contacts the region 158 through through the opening 164 and a conductive track 169 comes into contact with the region 156 through the opening 166.
- Region 156 forms the emitter or collector of the bipolar transistor and region 158 forms the base of the bipolar transistor.
- the region 162 forms the collector or emitter of the bipolar transistor and is connected, in the present embodiment, to the cathode of the LEDs.
- FIG. 21 represents a sectional view of an optoelectronic device 170 comprising all the elements of the optoelectronic device 150 represented in FIG. 20, except that the regions 160 and 154 are replaced by a doped region 171 of the same type of conductivity as region 162 and extending between region 156 and region 162 and a region
- region 158 It is doped with the same type of conductivity as region 158 and extends between regions 158, 14 and 162.
- Region 156 forms the emitter or collector of the bipolar transistor and region 158 forms the base of the bipolar transistor.
- the region 14 forms the collector or emitter of the bipolar transistor and is connected, in the present embodiment, to the cathode of the LEDs.
- the PN junctions of the bipolar transistor are situated substantially under the regions 156 and 158 while, in the Optoelectronic device 170 shown in Figure 21, the PN junctions of the bipolar transistor are located mainly in the region 14.
- Figures 22 and 23 are respectively a section and a top view of an embodiment of an optoelectronic device 173 son.
- the optoelectronic device 173 comprises at its periphery two trenches 174 filled with an insulating material which extend over a portion of the thickness of the substrate 10 from the face 12.
- each trench has a width greater than 1 um, for example about 2 ⁇ m.
- the distance between the two trenches 174 is greater than 5 ⁇ m, for example about 6 ⁇ m.
- the trenches 174 make it possible to obtain lateral electrical insulation of the optoelectronic device 173.
- additional trenches 178 project from the outer peripheral trench 174 to the lateral edges of the optoelectronic device 173. After cutting, a portion 180 of substrate 10 remains at the periphery of each optoelectronic device 170, 172.
- the trenches 178 make it possible to divide this peripheral portion 180 into several isolated segments 182. This makes it possible to reduce the risks of a short circuit in the case where conductive elements come into contact with these segments.
- each wire 20 comprises a passivated portion 22, at the base of the wire in contact with one of the seed pads 16, this passivated portion 22 may not be present.
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Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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EP14789320.0A EP3053200B1 (fr) | 2013-09-30 | 2014-09-30 | Dispositif optoélectronique a diodes électroluminescentes |
KR1020167007895A KR102249608B1 (ko) | 2013-09-30 | 2014-09-30 | 발광 다이오드를 포함하는 광전자 디바이스 |
JP2016518761A JP6881977B2 (ja) | 2013-09-30 | 2014-09-30 | 発光ダイオードを含む光電デバイス |
CN201480053827.7A CN105594000B (zh) | 2013-09-30 | 2014-09-30 | 具有发光二极管的光电子器件 |
US14/916,983 US20160197064A1 (en) | 2013-09-30 | 2014-09-30 | Optoelectronic device comprising light-emitting diodes |
US16/502,443 US10937777B2 (en) | 2013-09-30 | 2019-07-03 | Opto-electronic device with light-emitting diodes |
Applications Claiming Priority (2)
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FR1359411A FR3011381B1 (fr) | 2013-09-30 | 2013-09-30 | Dispositif optoelectronique a diodes electroluminescentes |
FR1359411 | 2013-09-30 |
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US14/916,983 A-371-Of-International US20160197064A1 (en) | 2013-09-30 | 2014-09-30 | Optoelectronic device comprising light-emitting diodes |
US16/502,443 Division US10937777B2 (en) | 2013-09-30 | 2019-07-03 | Opto-electronic device with light-emitting diodes |
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PCT/FR2014/052471 WO2015044619A1 (fr) | 2013-09-30 | 2014-09-30 | Dispositif optoélectronique a diodes électroluminescentes |
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US (2) | US20160197064A1 (fr) |
EP (1) | EP3053200B1 (fr) |
JP (1) | JP6881977B2 (fr) |
KR (1) | KR102249608B1 (fr) |
CN (1) | CN105594000B (fr) |
FR (1) | FR3011381B1 (fr) |
WO (1) | WO2015044619A1 (fr) |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US11536899B2 (en) | 2020-06-30 | 2022-12-27 | Openlight Photonics, Inc. | Integrated bandgap temperature sensor |
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Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1359411A (fr) | 1962-04-05 | 1964-04-24 | Olympia Werke Ag | Dispositif d'introduction pour mémoires à matrices |
US5362972A (en) * | 1990-04-20 | 1994-11-08 | Hitachi, Ltd. | Semiconductor device using whiskers |
US20030020132A1 (en) * | 2001-07-25 | 2003-01-30 | Motorola, Inc. | Methods and apparatus for controlling temperature-sensitive devices |
DE102004005269A1 (de) * | 2003-11-28 | 2005-06-30 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Halbleiterbauelement mit einer Schutzdiode |
US20060056123A1 (en) * | 2004-09-15 | 2006-03-16 | Sanken Electric Co., Ltd. | Light-emitting semiconductor device having an overvoltage protector, and method of fabrication |
US20080036038A1 (en) * | 2006-03-10 | 2008-02-14 | Hersee Stephen D | PULSED GROWTH OF CATALYST-FREE GROWITH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL |
US20080116465A1 (en) * | 2006-11-17 | 2008-05-22 | Samsung Electro-Mechanics Co., Ltd. | Light emitting transistor |
US20080149944A1 (en) * | 2006-12-22 | 2008-06-26 | Qunano Ab | Led with upstanding nanowire structure and method of producing such |
US20090321738A1 (en) * | 2008-06-25 | 2009-12-31 | Samsung Electronics Co., Ltd. | Display apparatus using oxide diode |
US20110260210A1 (en) * | 2010-04-23 | 2011-10-27 | Applied Materials, Inc. | Gan-based leds on silicon substrates with monolithically integrated zener diodes |
US20120061646A1 (en) * | 2009-05-22 | 2012-03-15 | Sun R&Db Foundation | Light emission device and manufacturing method thereof |
Family Cites Families (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US193102A (en) * | 1877-07-17 | Improvement in plows | ||
US194012A (en) * | 1877-08-07 | Improvement in automatic fire-extinguishing apparatus | ||
US74599A (en) * | 1868-02-18 | kogers | ||
US345201A (en) * | 1886-07-06 | Running-gear for wagons | ||
US83095A (en) * | 1868-10-13 | Improvement in valve-motion for steam-engines | ||
US3969746A (en) * | 1973-12-10 | 1976-07-13 | Texas Instruments Incorporated | Vertical multijunction solar cell |
US4774205A (en) * | 1986-06-13 | 1988-09-27 | Massachusetts Institute Of Technology | Monolithic integration of silicon and gallium arsenide devices |
EP0652600B1 (fr) * | 1993-11-02 | 1999-04-28 | Matsushita Electric Industrial Co., Ltd. | Méthode de fabrication d'un agrégat de micro-aiguilles semi-conductrices |
US6547249B2 (en) * | 2001-03-29 | 2003-04-15 | Lumileds Lighting U.S., Llc | Monolithic series/parallel led arrays formed on highly resistive substrates |
US8816443B2 (en) * | 2001-10-12 | 2014-08-26 | Quantum Semiconductor Llc | Method of fabricating heterojunction photodiodes with CMOS |
US6969897B2 (en) * | 2002-12-10 | 2005-11-29 | Kim Ii John | Optoelectronic devices employing fibers for light collection and emission |
JP2005019512A (ja) * | 2003-06-24 | 2005-01-20 | Toshiba Corp | 光送信機 |
US6969899B2 (en) * | 2003-12-08 | 2005-11-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor with light guides |
CN101330099B (zh) * | 2003-12-22 | 2010-12-08 | 皇家飞利浦电子股份有限公司 | 制造半导体纳米线组以及包括纳米线组的电器件 |
EP2733744A1 (fr) * | 2004-06-30 | 2014-05-21 | Seoul Viosys Co., Ltd | Élément d'émission lumineuse comprenant plusieurs DELs verticales couplées en serie sur le même substrat porteur |
AU2006297870B2 (en) * | 2005-03-01 | 2009-04-30 | Georgia Tech Research Corporation | Three dimensional multi-junction photovoltaic device |
WO2008048233A2 (fr) * | 2005-08-22 | 2008-04-24 | Q1 Nanosystems, Inc. | Nanostructure et pile photovoltaïque la mettant en oeuvre |
US7265328B2 (en) * | 2005-08-22 | 2007-09-04 | Micron Technology, Inc. | Method and apparatus providing an optical guide for an imager pixel having a ring of air-filled spaced slots around a photosensor |
US20070158661A1 (en) * | 2006-01-12 | 2007-07-12 | Rutgers, The State University Of New Jersey | ZnO nanostructure-based light emitting device |
CN101443887B (zh) * | 2006-03-10 | 2011-04-20 | Stc.Unm公司 | Gan纳米线的脉冲式生长及在族ⅲ氮化物半导体衬底材料中的应用和器件 |
US7629532B2 (en) * | 2006-12-29 | 2009-12-08 | Sundiode, Inc. | Solar cell having active region with nanostructures having energy wells |
CN101051634B (zh) * | 2007-02-02 | 2010-07-14 | 广州南科集成电子有限公司 | 硅衬底平面led集成芯片及制造方法 |
TWI340481B (en) * | 2007-06-11 | 2011-04-11 | Univ Nat Chiao Tung | The method for promoting light emission efficiency of led using nano-rod structure |
JP2009105182A (ja) * | 2007-10-23 | 2009-05-14 | Panasonic Corp | 光集積化素子および光集積化素子の製造方法 |
US8129710B2 (en) * | 2008-04-24 | 2012-03-06 | Hans Cho | Plasmon enhanced nanowire light emitting diode |
US7902540B2 (en) * | 2008-05-21 | 2011-03-08 | International Business Machines Corporation | Fast P-I-N photodetector with high responsitivity |
CN103022282B (zh) * | 2008-07-07 | 2016-02-03 | 格罗有限公司 | 纳米结构led |
US20100006864A1 (en) * | 2008-07-11 | 2010-01-14 | Philips Lumileds Lighting Company, Llc | Implanted connectors in led submount for pec etching bias |
US9082673B2 (en) * | 2009-10-05 | 2015-07-14 | Zena Technologies, Inc. | Passivated upstanding nanostructures and methods of making the same |
US8791470B2 (en) * | 2009-10-05 | 2014-07-29 | Zena Technologies, Inc. | Nano structured LEDs |
US8274039B2 (en) * | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
US8384007B2 (en) * | 2009-10-07 | 2013-02-26 | Zena Technologies, Inc. | Nano wire based passive pixel image sensor |
US8932940B2 (en) * | 2008-10-28 | 2015-01-13 | The Regents Of The University Of California | Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication |
DE102009006177A1 (de) * | 2008-11-28 | 2010-06-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
EP2419938A2 (fr) * | 2009-04-15 | 2012-02-22 | Sol Voltaics AB | Cellule photovoltaïque multi-jonction avec nanofils |
US8749053B2 (en) * | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
KR101650840B1 (ko) * | 2009-08-26 | 2016-08-24 | 삼성전자주식회사 | 발광소자 및 이의 제조방법 |
US8563395B2 (en) * | 2009-11-30 | 2013-10-22 | The Royal Institute For The Advancement Of Learning/Mcgill University | Method of growing uniform semiconductor nanowires without foreign metal catalyst and devices thereof |
EP2541625A1 (fr) * | 2010-02-25 | 2013-01-02 | National University Corporation Hokkaido University | Dispositif à semi-conducteurs et procédé de fabrication de dispositif à semi-conducteurs |
US9202954B2 (en) * | 2010-03-03 | 2015-12-01 | Q1 Nanosystems Corporation | Nanostructure and photovoltaic cell implementing same |
US8431817B2 (en) * | 2010-06-08 | 2013-04-30 | Sundiode Inc. | Multi-junction solar cell having sidewall bi-layer electrical interconnect |
AU2011268135B2 (en) * | 2010-06-18 | 2014-06-12 | Glo Ab | Nanowire LED structure and method for manufacturing the same |
TWI478319B (zh) * | 2010-07-20 | 2015-03-21 | Epistar Corp | 整合式發光裝置及其製造方法 |
KR20130093115A (ko) * | 2010-09-01 | 2013-08-21 | 샤프 가부시키가이샤 | 발광 소자 및 그 제조 방법, 발광 장치의 제조 방법, 조명 장치, 백라이트, 표시 장치 및 다이오드 |
FR2975532B1 (fr) * | 2011-05-18 | 2013-05-10 | Commissariat Energie Atomique | Connexion electrique en serie de nanofils emetteurs de lumiere |
WO2012035243A1 (fr) * | 2010-09-14 | 2012-03-22 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique a base de nanofils pour l'émission de lumière |
US8389348B2 (en) * | 2010-09-14 | 2013-03-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronics |
JPWO2012086517A1 (ja) * | 2010-12-20 | 2014-05-22 | ローム株式会社 | 発光素子ユニットおよび発光素子パッケージ |
KR20130106690A (ko) * | 2012-03-20 | 2013-09-30 | 삼성전자주식회사 | 백색 발광 다이오드 |
KR101901320B1 (ko) * | 2012-05-22 | 2018-09-21 | 삼성전자주식회사 | 발광소자 및 그 제조방법 |
KR101891777B1 (ko) * | 2012-06-25 | 2018-08-24 | 삼성전자주식회사 | 유전체 리플렉터를 구비한 발광소자 및 그 제조방법 |
KR101898679B1 (ko) * | 2012-12-14 | 2018-10-04 | 삼성전자주식회사 | 나노구조 발광소자 |
KR102022266B1 (ko) * | 2013-01-29 | 2019-09-18 | 삼성전자주식회사 | 나노구조 반도체 발광소자 제조방법 |
KR101554032B1 (ko) * | 2013-01-29 | 2015-09-18 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
FR3005788B1 (fr) * | 2013-05-14 | 2016-10-21 | Commissariat Energie Atomique | Dispositif optoelectronique et son procede de fabrication |
FR3005784B1 (fr) * | 2013-05-14 | 2016-10-07 | Aledia | Dispositif optoelectronique et son procede de fabrication |
FR3005785B1 (fr) * | 2013-05-14 | 2016-11-25 | Aledia | Dispositif optoelectronique et son procede de fabrication |
FR3011380B1 (fr) * | 2013-09-30 | 2017-01-13 | Aledia | Dispositif optoelectronique a diodes electroluminescentes |
US9627199B2 (en) * | 2013-12-13 | 2017-04-18 | University Of Maryland, College Park | Methods of fabricating micro- and nanostructure arrays and structures formed therefrom |
-
2013
- 2013-09-30 FR FR1359411A patent/FR3011381B1/fr not_active Expired - Fee Related
-
2014
- 2014-09-30 CN CN201480053827.7A patent/CN105594000B/zh active Active
- 2014-09-30 JP JP2016518761A patent/JP6881977B2/ja active Active
- 2014-09-30 EP EP14789320.0A patent/EP3053200B1/fr active Active
- 2014-09-30 KR KR1020167007895A patent/KR102249608B1/ko active IP Right Grant
- 2014-09-30 WO PCT/FR2014/052471 patent/WO2015044619A1/fr active Application Filing
- 2014-09-30 US US14/916,983 patent/US20160197064A1/en not_active Abandoned
-
2019
- 2019-07-03 US US16/502,443 patent/US10937777B2/en active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1359411A (fr) | 1962-04-05 | 1964-04-24 | Olympia Werke Ag | Dispositif d'introduction pour mémoires à matrices |
US5362972A (en) * | 1990-04-20 | 1994-11-08 | Hitachi, Ltd. | Semiconductor device using whiskers |
US20030020132A1 (en) * | 2001-07-25 | 2003-01-30 | Motorola, Inc. | Methods and apparatus for controlling temperature-sensitive devices |
DE102004005269A1 (de) * | 2003-11-28 | 2005-06-30 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Halbleiterbauelement mit einer Schutzdiode |
US20060056123A1 (en) * | 2004-09-15 | 2006-03-16 | Sanken Electric Co., Ltd. | Light-emitting semiconductor device having an overvoltage protector, and method of fabrication |
US20080036038A1 (en) * | 2006-03-10 | 2008-02-14 | Hersee Stephen D | PULSED GROWTH OF CATALYST-FREE GROWITH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL |
US20080116465A1 (en) * | 2006-11-17 | 2008-05-22 | Samsung Electro-Mechanics Co., Ltd. | Light emitting transistor |
US20080149944A1 (en) * | 2006-12-22 | 2008-06-26 | Qunano Ab | Led with upstanding nanowire structure and method of producing such |
US20090321738A1 (en) * | 2008-06-25 | 2009-12-31 | Samsung Electronics Co., Ltd. | Display apparatus using oxide diode |
US20120061646A1 (en) * | 2009-05-22 | 2012-03-15 | Sun R&Db Foundation | Light emission device and manufacturing method thereof |
US20110260210A1 (en) * | 2010-04-23 | 2011-10-27 | Applied Materials, Inc. | Gan-based leds on silicon substrates with monolithically integrated zener diodes |
Non-Patent Citations (4)
Title |
---|
KISHINO K ET AL: "GaN nanocolumn light-emitters, growth, and optical characterization", 2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEOPR), IEEE, 30 June 2013 (2013-06-30), pages 1 - 2, XP032481392, DOI: 10.1109/CLEOPR.2013.6599923 * |
KISHINO K ET AL: "Selective-area growth of GaN nanocolumns on titanium-mask-patterned silicon (111) substrates by RF-plasma-assisted molecular-beam epitaxy", ELECTRONIC LETTERS, THE INSTITUTION OF ENGINEERING AND TECHNOLOGY, vol. 44, no. 13, 19 June 2008 (2008-06-19), pages 819 - 821, XP006031356, ISSN: 1350-911X, DOI: 10.1049/EL:20081323 * |
See also references of EP3053200A1 |
WILDESON ISAAC ET AL: "III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 108, no. 4, 18 August 2010 (2010-08-18), pages 44303 - 44303, XP012142689, ISSN: 0021-8979, DOI: 10.1063/1.3466998 * |
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JP2018530153A (ja) * | 2015-09-14 | 2018-10-11 | ヴァレオ ビジョンValeo Vision | 温度測定手段を備えるミクロ又はナノワイヤled光源 |
CN107120590A (zh) * | 2016-02-24 | 2017-09-01 | 法雷奥照明公司 | 用于机动车乘客车厢的照明系统 |
FR3077653A1 (fr) * | 2018-02-06 | 2019-08-09 | Aledia | Dispositif optoelectronique avec des composants electroniques au niveau de la face arriere du substrat et procede de fabrication |
WO2019155146A1 (fr) | 2018-02-06 | 2019-08-15 | Aledia | Dispositif optoélectronique avec des composants électroniques au niveau de la face arrière du substrat et procédé de fabrication |
US11552126B2 (en) | 2018-02-06 | 2023-01-10 | Aledia | Optoelectronic device with electronic components at the level of the rear face of the substrate and manufacturing method |
CN112335046A (zh) * | 2018-06-26 | 2021-02-05 | 艾利迪公司 | 包括发光二极管的光电设备 |
EP3671843A1 (fr) | 2018-12-21 | 2020-06-24 | Commissariat À L'Énergie Atomique Et Aux Énergies Alternatives | Procede de fabrication d'une pluralite de diodes a partir d'un substrat de lecture |
FR3091026A1 (fr) * | 2018-12-21 | 2020-06-26 | Commissariat à l'Energie Atomique et aux Energies Alternatives | procede de fabrication d’une pluralité de diodes à partir d’un substrat de lecture |
WO2023006846A1 (fr) | 2021-07-30 | 2023-02-02 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'un dispositif optoelectronique comportant une etape de realisation d'une couche mince conductrice de maniere conforme et continue par depot directif |
FR3125921A1 (fr) | 2021-07-30 | 2023-02-03 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Procédé de fabrication d’un dispositif optoélectronique comportant une étape de réalisation d’une couche mince conductrice de manière conforme et continue par dépôt directif |
Also Published As
Publication number | Publication date |
---|---|
FR3011381A1 (fr) | 2015-04-03 |
KR20160064109A (ko) | 2016-06-07 |
CN105594000B (zh) | 2018-12-04 |
KR102249608B1 (ko) | 2021-05-07 |
EP3053200A1 (fr) | 2016-08-10 |
JP2016539493A (ja) | 2016-12-15 |
CN105594000A (zh) | 2016-05-18 |
JP6881977B2 (ja) | 2021-06-02 |
EP3053200B1 (fr) | 2021-09-01 |
US20160197064A1 (en) | 2016-07-07 |
US10937777B2 (en) | 2021-03-02 |
FR3011381B1 (fr) | 2017-12-08 |
US20190326270A1 (en) | 2019-10-24 |
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