WO2015039900A1 - Synchrongleichrichter - Google Patents
Synchrongleichrichter Download PDFInfo
- Publication number
- WO2015039900A1 WO2015039900A1 PCT/EP2014/069014 EP2014069014W WO2015039900A1 WO 2015039900 A1 WO2015039900 A1 WO 2015039900A1 EP 2014069014 W EP2014069014 W EP 2014069014W WO 2015039900 A1 WO2015039900 A1 WO 2015039900A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- rectifier
- coupled
- synchronous rectifier
- main switch
- synchronous
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04126—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transistor switches
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
- H03K17/0424—Modifications for accelerating switching by feedback from the output circuit to the control circuit by the use of a transformer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/605—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/61—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/30—Modifications for providing a predetermined threshold before switching
- H03K2017/307—Modifications for providing a predetermined threshold before switching circuits simulating a diode, e.g. threshold zero
Definitions
- the present invention relates to a synchronous rectifier having an input with a first and a second input terminal for coupling to a DC voltage source, an output having a first and a second output terminal for providing a DC voltage, at least one transformer having at least one primary winding and at least one secondary winding, said primary winding is serially input terminal coupled to the first input, and at least one rectifier cell, which comprises at least one rectifying ⁇ terzelle: a first and a second terminal, said first terminal of said rectifier cell with one of the input terminals of the Synchron Eisenrich- ters coupled is, wherein the second terminal of the rectifier cell is coupled to one of the output terminals of the synchronous rectifier, a bipolar main switch with a control electrode, a working ⁇ electrode and a reference electrode, wherein the bipo lare main switch between the first and the second terminal of the rectifier cell is coupled to a first diode which is so coupled to the collector-emitter path of the Bipo ⁇ stellar main switch that it blocks the
- synchronous rectifier shown in Figures 1 and 2 are known from DE 10 2008 018 390 Al is known, in which a plurality of advertising Darge ⁇ presented in Fig. 3 type of rectifier cells Gi used to.
- Fig. 1 shows a synchronous rectifier constructed as a bridge rectifier
- Fig. 2 shows a synchronous rectifier constructed as a center rectifier.
- DE 10 2008 018 390 AI As angedeu ⁇ tet in Fig.
- the winding sense of the secondary winding of the respective rectifier cell Gi may vary, as well as which of the two terminals is used as input, wel ⁇ cher as output of the rectifier cell as the fact, whichever synchronous rectifier is constructed and the according to position of the rectifier cell Gi within the respective synchronous rectifier.
- One terminal of the rectifier cell Gi therefore be ⁇ labeled GE1 or GA1 that carries out draws others according with GA1 and GE1.
- the inductors LI, L2, L3 form a center tapped transformer Tr2 while the inductors L12, L13, which are arranged in series with the secondary windings L2, L3 of the transformer Tr2, form the center Primary windings of a control transformer Tri are whose secondary windings are arranged in the respective rectifier cells Gi.
- a control transformer Tri As compared to those of the paper "A New Synchronous Rectifier Using Bipolar Transistor Driven by Current Transformer" by Sakai, E. and Harada, K., published in 14th International Telecommunications Energy Conference 1992, INTELEC '92, 4-8 Oct.
- FIG. 4 of the cited document shows a rectifier cell which has a first and a second Main switch has.
- the first main switch is a first auxiliary switch, the second main switch associated with a second auxiliary switch.
- a first capacitor is coupled to a first auxiliary winding, a second capacitor to a second auxiliary winding.
- a discharge path for the gate terminals of the main switch be ⁇ riding determine if they are in the off state, the gate terminal of the first main switch with the non-coupled with the first auxiliary winding terminal of the first capacitor is coupled to the gate terminal of the second auxiliary switch is coupled to the not coupled to the second auxiliary winding terminal of the second capacitor.
- the path source drain of the first auxiliary switch is coupled between the not coupled to the first auxiliary winding terminal of the first capacitor and the reference potential. In this way, by turning off the first auxiliary switch, the gate terminal of the first main switch can be discharged. The same applies with respect to the second auxiliary switch and the second main switch.
- the object of the present invention is to further develop a generic synchronous rectifier such that at operating frequencies beyond 20 kHz, a better efficiency is made possible. This object is achieved by a synchronous rectifier having the features of patent claim 1.
- the present invention is based on the recognition that for the poor efficiency of the state of the art Known synchronous rectifier frequencies from about 20 kHz, the comparatively large storage time of the bipolar transistors used in the rectifier cells is responsible. For example, at frequencies of 100 kHz, one half-period of the input signal is 5 ys. In contrast is the storage time of use ⁇ th bipolar about 1 ys. This has the consequence that the bipolar transistors used can not be turned off fast enough to lock. As a result, voltage and current occur simultaneously in the transistor, resulting in losses that lead to an undesirably low efficiency of such synchronous rectifier. In particular, pulse-shaped currents in which the current change takes place comparatively quickly, the bipolar transistor can follow only delayed.
- the present invention overcomes this problem by modifying the driving of the bipolar transistor with respect to the known rectifier cell Gi in such a way that a clear switch-off acceleration is achieved. This is designed so that when the current in the respective rectifier cell approaches zero, it turns off the corresponding bipolar transistor very quickly.
- the min ⁇ least one rectifier cell further comprises an energy ⁇ memory that is coupled in series between the secondary winding and the control electrode of the bipolar main switch and an auxiliary switch with a tax electrode, a working electrode and a reference ⁇ electrode which is coupled between the coupling point of the energy ⁇ memory with the secondary winding on the one hand and the first terminal of the rectifier cell on the other hand, wherein the control electrode of the auxiliary switch is also ge ⁇ coupled to the at least one secondary winding.
- the auxiliary switch is controlled by the relevant secondary winding for the bipolar main switch and ensures that the main switch is turned off before the end of the inverse phase.
- the forward operation is characterized in that the voltage U ce is greater than zero. Accordingly, in inverse operation, U ce is less than zero.
- the voltage U ce is less than zero, while in its inverse operation, the voltage U ce is greater than zero.
- the solution according to the invention makes it possible to completely avoid return currents of the bipolar main switch of a rectifier cell.
- the efficiency of a synchronous rectifier constructed therewith increases significantly, and an efficient application at frequencies greater than or equal to 20 kHz, in particular at about 100 kHz and more, is made possible.
- the invention presented below which relates to the realization of improved synchronous rectifiers by providing an improved rectifier cell Gi, not only enables the construction of an improved synchronous rectifier as a bridge rectifier (see FIG. see Fig. 1) or as a center rectifier (see Fig. 2), but also as a half-wave rectifier, for example as the main rectifier in an isolated flyback converter (flyback), or as Stromverdoppler, in which one half of a full bridge is replaced by two independent inductors ,
- a voltage limiting element in particular a Zener diode, is connected in parallel to the energy store.
- a voltage limiting element in particular a Zener diode
- a defined, be ⁇ bordered voltage at the energy storage can be adjusted. Since the losses on the secondary side are proportional to the product of current and voltage of the secondary side, limiting the voltage by means of the voltage limiting element can reduce the control losses.
- the energy storage is a capacitor.
- the distance control electrode - Be ⁇ yakselektrode the bipolar main switch an ohmic resistance connected in parallel.
- the Sperrfä ⁇ ability of the bipolar main switch is increased in forward operation, resulting in a simple way maximum dielectric strength.
- the auxiliary switch is also realized as a bipolar transistor. So that it can be particularly easily fed from the same power source as the bi ⁇ polar main switch.
- the transformer whose secondary winding is disposed in the respective rectifier cell is designed as a current transformer.
- the turns ratio of primary winding to Secondary winding is set the forced current amplification ratio for the bipolar transistor, which should be in the order of magnitude or below the saturation current gain of the main bipolar switch used in inverse operation.
- the impedance coL is to choose greater than the load impedance through the improved rectifier cell Gi.
- the elimination of the base charge of the bipolar main switch is carried out by means of the auxiliary switch, which amplifies the ⁇ fed base current with its current gain and thus allows relatively large Aus syndromemströme for the bipolar main switch, which can be turned off very quickly.
- a MOSFET transistor as an auxiliary switch can in principle also be used, but would bring with it the disadvantage of a not so precisely fixed switch-on voltage.
- the auxiliary switch is complementary to the bipolar main switch.
- the base of the bipolar main switch taking advantage of the current gain of the auxiliary switch with the emitter of the auxiliary switch for clearing the base of the bipolar main switch to couple.
- the rectifier cell preferably comprises a second de ⁇ Dio which is serially coupled between the secondary winding and the energy storage device, wherein the working electrode of the auxiliary switch is coupled to the coupling point of the second Di ⁇ ode and the energy store.
- This second diode is necessary so that the auxiliary switch remains controllable. For example, if loading of the energy storage and the transformer takes a negative edge on, locks this second diode of the auxiliary switch is turned ⁇ on.
- an ohmic resistance is coupled between the secondary winding and the control electrode of the auxiliary switch. This serves to Be ⁇ limitation of the base current of the auxiliary switch.
- the rectifier cell further comprises a third diode which is zwi ⁇ tween the reference electrode of the auxiliary switch and the first terminal of the rectifier cell coupled. If the voltage at the control electrode of the auxiliary switch is more negative than the voltage at the working electrode of the auxiliary switch, then the auxiliary switch is conductive.
- the third diode prevents the removal of charge carriers from the base of the bipolar main switch when it is to be switched on. In other words, an inverse operation of the auxiliary switch is prevented.
- a single rectifier cell can be ⁇ example, a for a flyback converter (flyback) trained synchronous rectifier realis ming.
- a synchronous rectifier designed as a center rectifier can be realized by means of four rectifier cells of a synchronous rectifier designed as a full-bridge rectifier.
- Figure 1 is a schematic representation of a known from the prior art, designed as a bridge rectifier synchronous rectifier.
- FIG. 2 is a schematic representation of a known from the prior art, designed as a center rectifier synchronous rectifier.
- FIG. 3 in a schematic representation of a in the in the
- Figures 1 and 2 shown synchronous rectifiers to be used, from the prior art be ⁇ known rectifier cell Gi;
- FIG. 4 is a schematic representation of an embodiment of a rectifier cell Gi according to the invention.
- Fig. 5 shows the time course of the collector-emitter voltage U ce of the bipolar main switch and - Il of the collector current I c of the bipolar head scarf ⁇ tative of a built-up as a bridge rectifier using an inventive ⁇ SEN rectifier cell synchronous rectifier.
- synchronous rectifier according to the invention can be realized as a bridge rectifier, as shown in FIG. 1, as a center rectifier, as shown in FIG. 2, or as a half-wave rectifier, for example in the flyback converter.
- the rectifier cell Gi comprises the secondary winding L4i of a transformer Tri whose primary winding L4 is coupled in series to the first input terminal El of the synchronous rectifier.
- the rectifier cell Gi has a first terminal GE1 or GA1 and a second terminal GA1 or GE1. Which of the terminals GE1 or GA1 is coupled to the input of the synchronous rectifier and which is coupled to its output depends on the position of the respective rectifier cell Gi within the synchronous rectifier.
- a rectifier cell Gi in each case a secondary winding L4i is arranged, wherein the winding direction must also be taken into consideration with regard to the respective position within a synchronous rectifier constructed therewith.
- the rectifier cell Gi shown in FIG. 4 merely represents one possible embodiment. Example in which the present invention will be described in detail below.
- the Pa ⁇ rallelsc is coupled between the terminals GE1 / GA1 and GA1 / GE1.
- the diode Dl is connected to the collector-emitter path of the bipolar main switch Tl such that it blocks the flow of current during forward operation of the bipolar main switch Tl.
- the series connection of a diode D2 and a capacitor C2 is coupled in series between the secondary winding L4i and the control electrode of the bipolar main switch T1, wherein a zener diode D4 is connected in parallel with the capacitor C2 for limiting the voltage.
- an ohmic resistance R2 is connected between the coupling point Nl of the capacitor C2 and the control electrode of the bipolar main switch Tl egg ⁇ neminte and the terminal GE1 / GA1 on the other hand.
- an ohmic resistance R2 is connected between the Kopp ⁇ ment point N2 of the diode D2 and the capacitor C2 on the one hand ⁇ and the terminal GE1 / GA1 on the other hand.
- the diode D3 is preferably designed as a Schottky diode.
- the bipolar main switch Tl is formed as an NPN transistor
- the auxiliary switch T2 is formed complementary thereto, that is, as a PNP transistor and vice versa.
- an ohmic resistor Rl is coupled between the secondary winding L4i and the control electrode of the auxiliary switch T2.
- Fig. 5 in which the time course of Collector-emitter voltage U ce and the collector current I c of the bipolar main switch Tl is shown.
- the transistor T1 is again in the blocking state, whereupon the diode Dl takes over the current again.
- that is at a negative half-wave of the input voltage U ac is the Current I c approximately zero, wherein from the time t4 and the diode Dl goes into its non-conducting state and the voltage U ce increases to its high blocking value.
- the transistor Tl in the inverse mode as quickly as possible from ⁇ switch on.
- Towards the end of the inverse phase are at the collector gate due to the diode D has a potential of about -1 V.
- To turn off the base of the transistor Tl must be negati ⁇ ver than the collector, to extract the charge carriers from the base. Without the capacitor C2, the base of the transistor T1 would indeed be at a potential of about 0 V, but not more negative than the voltage applied to the collector -1 V.
- the capacitor C2 and the diode D4 are dimensioned such that approximately 2.5 V drop across them.
- the capacitor C2 thus acts as a voltage source. If the auxiliary switch T2 is turned on switches, the left terminal of the capacitor C2 is set to approximately reference potential, ie the potential at the terminal GE1 / GA1. The right terminal of the capacitor C2 is pulled down according to the charge on the capacitor C2. Characterized a negative potential to the base of transistor Tl is generated, whereby a trailing switching acceleration is achieved.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Rectifiers (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201480051420.0A CN105556843B (zh) | 2013-09-20 | 2014-09-05 | 同步整流器 |
US15/023,007 US9831795B2 (en) | 2013-09-20 | 2014-09-05 | Synchronous rectifier |
DE112014004324.9T DE112014004324A5 (de) | 2013-09-20 | 2014-09-05 | Synchrongleichrichter |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013219015.8 | 2013-09-20 | ||
DE102013219015.8A DE102013219015A1 (de) | 2013-09-20 | 2013-09-20 | Synchrongleichrichter |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015039900A1 true WO2015039900A1 (de) | 2015-03-26 |
Family
ID=51485648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2014/069014 WO2015039900A1 (de) | 2013-09-20 | 2014-09-05 | Synchrongleichrichter |
Country Status (4)
Country | Link |
---|---|
US (1) | US9831795B2 (de) |
CN (1) | CN105556843B (de) |
DE (2) | DE102013219015A1 (de) |
WO (1) | WO2015039900A1 (de) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63276319A (ja) * | 1987-05-07 | 1988-11-14 | Origin Electric Co Ltd | 半導体スイツチング素子の駆動回路 |
DE3932083C1 (en) * | 1989-09-26 | 1991-04-11 | Siemens Ag, 1000 Berlin Und 8000 Muenchen, De | Control circuitry for FET operating as switch in load circuit - provides voltage source dependent on control voltage of FET raising working point of controlled path by offset voltage |
US5481219A (en) * | 1994-07-20 | 1996-01-02 | At&T Corp. | Apparatus and method for generting negative bias for isolated MOSFET gate-drive circuits |
DE102008018390A1 (de) * | 2008-04-11 | 2009-10-15 | Osram Gesellschaft mit beschränkter Haftung | Synchrongleichrichter und Verfahren zum Betreiben eines Synchrongleichrichters |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3175663B2 (ja) * | 1997-10-17 | 2001-06-11 | 株式会社村田製作所 | 自励発振型スイッチング電源装置 |
SE514850C2 (sv) * | 1998-05-07 | 2001-04-30 | Ericsson Telefon Ab L M | Synkronlikriktare i flybacktopologi |
JP2001224170A (ja) * | 2000-02-09 | 2001-08-17 | Sony Corp | スイッチング電源回路 |
US7088602B2 (en) * | 2001-01-25 | 2006-08-08 | Texas Instruments Incorporated | Active gate clamp circuit for self driven synchronous rectifiers |
US6674658B2 (en) * | 2001-02-09 | 2004-01-06 | Netpower Technologies, Inc. | Power converter including circuits for improved operational control of synchronous rectifiers therein |
FR2826523B1 (fr) * | 2001-06-25 | 2003-12-19 | Cit Alcatel | Redresseur synchrone auto-commande |
CN1238957C (zh) * | 2002-04-11 | 2006-01-25 | 鸿运电子股份有限公司 | 一种使用同步整流电路的转换器 |
US6771521B1 (en) * | 2003-02-20 | 2004-08-03 | Delta Electronics, Inc. | Active snubber for synchronous rectifier |
-
2013
- 2013-09-20 DE DE102013219015.8A patent/DE102013219015A1/de not_active Withdrawn
-
2014
- 2014-09-05 US US15/023,007 patent/US9831795B2/en active Active
- 2014-09-05 WO PCT/EP2014/069014 patent/WO2015039900A1/de active Application Filing
- 2014-09-05 CN CN201480051420.0A patent/CN105556843B/zh active Active
- 2014-09-05 DE DE112014004324.9T patent/DE112014004324A5/de not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63276319A (ja) * | 1987-05-07 | 1988-11-14 | Origin Electric Co Ltd | 半導体スイツチング素子の駆動回路 |
DE3932083C1 (en) * | 1989-09-26 | 1991-04-11 | Siemens Ag, 1000 Berlin Und 8000 Muenchen, De | Control circuitry for FET operating as switch in load circuit - provides voltage source dependent on control voltage of FET raising working point of controlled path by offset voltage |
US5481219A (en) * | 1994-07-20 | 1996-01-02 | At&T Corp. | Apparatus and method for generting negative bias for isolated MOSFET gate-drive circuits |
DE102008018390A1 (de) * | 2008-04-11 | 2009-10-15 | Osram Gesellschaft mit beschränkter Haftung | Synchrongleichrichter und Verfahren zum Betreiben eines Synchrongleichrichters |
Also Published As
Publication number | Publication date |
---|---|
DE102013219015A1 (de) | 2015-03-26 |
US9831795B2 (en) | 2017-11-28 |
US20160233786A1 (en) | 2016-08-11 |
CN105556843B (zh) | 2019-05-17 |
CN105556843A (zh) | 2016-05-04 |
DE112014004324A5 (de) | 2016-07-21 |
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