WO2015039841A1 - Verfahren zur herstellung von polykristallinem silicium - Google Patents
Verfahren zur herstellung von polykristallinem silicium Download PDFInfo
- Publication number
- WO2015039841A1 WO2015039841A1 PCT/EP2014/068119 EP2014068119W WO2015039841A1 WO 2015039841 A1 WO2015039841 A1 WO 2015039841A1 EP 2014068119 W EP2014068119 W EP 2014068119W WO 2015039841 A1 WO2015039841 A1 WO 2015039841A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- reactor
- polycrystalline silicon
- silicon rod
- protective
- rods
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
Definitions
- the invention relates to a process for the production of polycrystalline silicon.
- High-purity polycrystalline silicon serves as a starting material for the production of single-crystal silicon for semiconductors according to the Czochralski (CZ) or zone melting (FZ) method, and for the production of on or
- Multicrystalline silicon after various drawing and casting processes for the production of solar cells for photovoltaics.
- Polysilicon is usually produced by means of the Siemens process.
- a reaction gas comprising one or more silicon-containing components and optionally hydrogen in a reactor comprising by direct
- Silicon-containing components are preferably silane (SiH 4 ), monochlorosilane (SiH 3 Cl), dichlorosilane (SiH 2 Cl 2 ), trichlorosilane (SiHCl 3 ), silicon tetrachloride (SiCl 4 ) or mixtures of the substances mentioned.
- the Siemens procedure is usually in one
- the reactor comprises a metallic bottom plate and a coolable bell which is placed on the bottom plate so that a reaction space in the
- the bottom plate is provided with one or more gas inlet openings and one or more
- Each support body usually consists of two thin vertical filament rods and a horizontal one
- a shut-off valve for the reaction gas flowing into the reactor, a mixture of hydrogen and one of the aforementioned silicon-containing components, and a shut-off valve for the exhaust gas flowing out of the reactor are opened.
- the reaction gas flows through the supply port in the bottom plate into the closed one
- Deposition reactor There, the deposition of silicon on the heated by direct current passage thin rods. The resulting in the reactor, hot exhaust gas leaves the reactor through an opening in the bottom plate and can then a treatment, such as condensation
- Diameter increases with time. After the desired diameter is reached, the process is terminated. The resulting polycrystalline silicon rod pairs are then usually cooled to room temperature.
- U-shaped polycrystalline silicon rods which can be several meters high and can weigh several 1000 kg.
- the silicon rods can be removed from the reactor. Because the Siemens procedure
- the reactors are turned off for this purpose, so the deposition time is interrupted.
- the shut-off valves for reaction gas are closed and the power supply is interrupted.
- the opened reactors the deposited polycrystalline silicon can be removed.
- a reactor top is removed, usually lifted up. From an economic point of view, it is advantageous to make the disassembly and set-up times as short as possible to the
- one or more rods or rod pairs may tip over and thereby or at the contact, e.g. with the hall floor, with the bottom plate of the reactor, with other bars or pairs of bars break. If several rods are contained in the reactor, the risk is very high that all rods of this batch will break and due to the breakage and possible contamination for the
- the opening of the reactor and the rod removal should be done in such a way as to avoid superficial contamination of the rods and, if possible, not to break the rods.
- JP7029045B describes a disassembly rocker, which moves laterally to the reactor and lifts out the pairs of rods.
- US 20100043972 A1 discloses another apparatus for removing polycrystalline silicon rods, comprising a wall having an inner wall, an outer wall and a plurality of
- the bar is designed to allow access to the silicon rods.
- the bars can be removed via the access windows.
- Transport device be deposited.
- JP 63296840 A discloses a device for the removal of
- JP 2002210355 A also discloses a device for the removal of
- Silicon rods comprising a movable in three dimensions arm, at the end of a clamping device is mounted, with which the silicon rods can be lifted out of the reactor.
- a disadvantage of these two devices is the fact that the rods can be removed from the completely open reactor only from outside to inside.
- a targeted expansion of a particular silicon rod e.g. from an inner
- Discloses a method for producing a polycrystalline silicon piece consisting of a CVD process for producing a polycrystalline silicon rod by depositing silicon on a filament wire having one end connected to a first electrode and the other end to a second electrode, a Process for removing the polycrystalline silicon rod from the reactor and a comminution process of the silicon rod in
- Pieces of silicon characterized in that before
- the surface of the polycrystalline silicon rod is before the
- the object is achieved by a method for producing polycrystalline silicon, comprising introducing a
- the reactor is usually hermetically sealed.
- the carrier body is usually a U-shaped carrier body comprising two silicon rods and a horizontal bridge. During the deposition of the
- the reaction gases namely the silicon-containing component, which is for example a chlorosilane such as
- Trichlorosilane acts, and hydrogen, over one
- the deposition is usually terminated, namely by the fact that the power supply ends and the
- the reactor top is removed, in particular by lifting the reactor shell.
- Protective elements are designed such that they completely surround the polycrystalline silicon rod pairs after a certain lifting of the upper reactor part. Once this is the case, the protective elements are connected to the bottom structure, namely the bottom plate of the reactor, and released from the reactor top.
- the protective elements form the protective wall, which is provided in the method according to the invention.
- a movable and hinged protective cover or protective wall is provided, which can be moved up to the side of the reactor and
- the method and its preferred embodiment have the advantage that the bars are free at any time
- the reactor is opened for a certain period of time before or while the connections are removed from the reactor top.
- This period of venting preferably begins with the first opening of the reactor after deposition of a batch of polycrystalline silicon and includes the period of time after completion of the
- a sight glass can be opened.
- a medium can via a
- When supplied medium may be air or their
- the pairs of rods before their removal and as soon as they are accessible are provided with a coating.
- This can be a bag made of plastic, which encloses the pairs of rods.
- it is a bag-like part made of high-purity PE.
- the expansion of the rod pairs is preferably carried out with a
- the device that is dimensioned to be a U-shaped Can fully enclose rod pair, the device cooperates with the enclosed by him U-shaped rod pair with a crane, a cable or a gripper that the device can be removed together with the U-shaped rod pair from the reactor.
- the carrier bodies are heated by direct passage of current to a temperature at which polycrystalline silicon is deposited thereon.
- the rod temperature is preferably 1150 K to 1600 K.
- the support bodies are usually connected for this purpose with electrodes made of high-purity electrographite, via which the power is supplied. Preferably, therefore, after removal of the rod pairs, the graphite electrode is removed from the rod base.
- the pairs of rods are preferably comminuted into fragments of different size classes, e.g. by means of a jaw crusher or a roll crusher.
- the fragments are preferably packed in plastic bags and transported to the customer.
- Reactor upper part connected components are removed.
- the removal of the reactor shell is usually carried out by booting. After removal of the upper reactor part, the detached rod pairs can be removed. However, there is a risk that the pairs of rods may fall over.
- the rod pairs of the environment and thus possibly
- the invention describes a method by which the
- Fig. 1 shows a reactor with protective cover.
- Fig. 2 shows a reactor with protective elements.
- Fig. 3 shows a reactor and a movable protective wall.
- FIG. 1 shows a first embodiment of the method.
- reactor shows a reactor with a reactor top 1, inlets and outlets 3 and 4 for media (reaction gases, exhaust gas), a bottom structure 6 (in particular bottom plate with electrodes) and the egg-shaped polycrystalline silicon rod pairs 5.
- media reaction gases, exhaust gas
- bottom structure 6 in particular bottom plate with electrodes
- egg-shaped polycrystalline silicon rod pairs 5 The reactor is surrounded by a protective cover 2.
- Reactor top 1 and bottom structure 6 slipped. Then the upper reactor part 1 is detached from the bottom structure 6, raised and transported away for cleaning.
- the protective cover 2 ensures that employees are protected from any overturning polycrystalline silicon rod pairs 5.
- the polycrystalline silicon rod pairs 5 are protected from any overturning polycrystalline silicon rod pairs 5.
- the polycrystalline silicon rod pairs 5 are protected from any overturning polycrystalline silicon rod pairs 5.
- the polycrystalline silicon rod pairs 5 are protected from any overturning polycrystalline silicon rod pairs 5.
- Silicon rod pairs 5 themselves can be carried out by means of grippers, cranes or expansion baskets as described in the prior art.
- Fig. 2 is another embodiment of the present invention
- the protective elements 7 are designed such that they completely surround the polycrystalline silicon rod pairs 5 after a certain lifting of the upper reactor part.
- the protective elements 7 are connected to the bottom structure and released from the reactor shell. Also in this embodiment can be started directly with the cleaning of the reactor top.
- the reactor upper part is first raised and the protective elements 7 are mounted. Subsequently, the
- Fig. 3 is another embodiment of the
- Protective cover or protective wall 8 Mobile because it can be moved up to the side of the reactor. Foldable because it includes folding doors.
- the protective wall 8 is from the side to the reactor
- the flap doors are closed, e.g. locked by Bol.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/023,567 US9738531B2 (en) | 2013-09-23 | 2014-08-27 | Process for producing polycrystalline silicon |
KR1020167009361A KR101955079B1 (ko) | 2013-09-23 | 2014-08-27 | 다결정 실리콘의 제조 방법 |
CN201480052456.0A CN105579395B (zh) | 2013-09-23 | 2014-08-27 | 用于生产多晶硅的方法 |
EP14758333.0A EP3049369B1 (de) | 2013-09-23 | 2014-08-27 | Verfahren zur herstellung von polykristallinem silicium |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013219070.0A DE102013219070A1 (de) | 2013-09-23 | 2013-09-23 | Verfahren zur Herstellung von polykristallinem Silicium |
DE102013219070.0 | 2013-09-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015039841A1 true WO2015039841A1 (de) | 2015-03-26 |
Family
ID=51454670
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2014/068119 WO2015039841A1 (de) | 2013-09-23 | 2014-08-27 | Verfahren zur herstellung von polykristallinem silicium |
Country Status (7)
Country | Link |
---|---|
US (1) | US9738531B2 (de) |
EP (1) | EP3049369B1 (de) |
KR (1) | KR101955079B1 (de) |
CN (1) | CN105579395B (de) |
DE (1) | DE102013219070A1 (de) |
TW (1) | TWI532678B (de) |
WO (1) | WO2015039841A1 (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020255672A1 (ja) | 2019-06-17 | 2020-12-24 | 株式会社トクヤマ | 棒状体、治具、取り外し方法およびシリコンロッドの製造方法 |
WO2020255664A1 (ja) | 2019-06-17 | 2020-12-24 | 株式会社トクヤマ | シリコンロッドの保護構造体およびシリコンロッドの製造方法 |
KR20220020823A (ko) | 2019-06-17 | 2022-02-21 | 가부시끼가이샤 도꾸야마 | 봉상체, 지그, 분리 방법 및 실리콘 로드의 제조 방법 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102553013B1 (ko) * | 2018-12-17 | 2023-07-06 | 와커 헤미 아게 | 다결정 실리콘의 제조 방법 |
JP7217720B2 (ja) * | 2020-03-10 | 2023-02-03 | 信越化学工業株式会社 | ベースプレートの汚染防止方法 |
CN112981527A (zh) * | 2021-04-23 | 2021-06-18 | 青岛赛瑞达电子科技有限公司 | 一种lpcvd多晶炉工艺炉膛 |
CN116443881B (zh) * | 2023-03-31 | 2024-06-14 | 云南通威高纯晶硅有限公司 | 多晶硅还原炉快速停炉的方法、系统、计算机设备及可读存储介质 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63296840A (ja) | 1987-05-29 | 1988-12-02 | Koujiyundo Silicon Kk | ロッド解体機 |
JP2002210355A (ja) | 2001-01-18 | 2002-07-30 | Sumitomo Titanium Corp | ロッド解体機 |
EP2157051A2 (de) * | 2008-08-22 | 2010-02-24 | LDK Solar Hi-Tech Co., Ltd. | Erntevorrichtung zum Ernten von Polykristallin-Siliciumstangen, kombinierte Vorrichtung und Verfahren zur Verwendung davon |
DE102009027830B3 (de) | 2009-07-20 | 2011-01-13 | Wacker Chemie Ag | Verfahren zur Entnahme von Siliciumstäben aus einem Reaktor |
US20110250366A1 (en) * | 2010-04-12 | 2011-10-13 | Memc Electronic Materials, S.P.A. | Bell jar for siemens reactor including thermal radiation shield |
US20120175613A1 (en) | 2009-09-16 | 2012-07-12 | Shin-Etsu Chemical Co., Ltd. | Polycrystalline silicon mass and process for producing polycrystalline silicon mass |
US20120237678A1 (en) | 2011-03-18 | 2012-09-20 | Memc Electronic Materials Spa | Tool For Harvesting Polycrystalline Silicon-coated Rods From A Chemical Vapor Deposition Reactor |
EP2607309A1 (de) * | 2011-12-21 | 2013-06-26 | Wacker Chemie AG | Polykristallines Siliciumstück und Verfahren zum Brechen eines Siliciumkörpers |
WO2013114858A1 (ja) * | 2012-02-02 | 2013-08-08 | 信越化学工業株式会社 | 多結晶シリコン棒搬出治具および多結晶シリコン棒の刈取方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19608885B4 (de) * | 1996-03-07 | 2006-11-16 | Wacker Chemie Ag | Verfahren und Vorrichtung zum Aufheizen von Trägerkörpern |
CN201313954Y (zh) * | 2008-11-03 | 2009-09-23 | 江苏中能硅业科技发展有限公司 | 用于制备多晶硅的还原炉 |
-
2013
- 2013-09-23 DE DE102013219070.0A patent/DE102013219070A1/de not_active Withdrawn
-
2014
- 2014-08-27 CN CN201480052456.0A patent/CN105579395B/zh active Active
- 2014-08-27 EP EP14758333.0A patent/EP3049369B1/de active Active
- 2014-08-27 US US15/023,567 patent/US9738531B2/en active Active
- 2014-08-27 WO PCT/EP2014/068119 patent/WO2015039841A1/de active Application Filing
- 2014-08-27 KR KR1020167009361A patent/KR101955079B1/ko active IP Right Grant
- 2014-09-22 TW TW103132613A patent/TWI532678B/zh active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63296840A (ja) | 1987-05-29 | 1988-12-02 | Koujiyundo Silicon Kk | ロッド解体機 |
JPH0729045B2 (ja) | 1987-05-29 | 1995-04-05 | 高純度シリコン株式会社 | ロッド解体機 |
JP2002210355A (ja) | 2001-01-18 | 2002-07-30 | Sumitomo Titanium Corp | ロッド解体機 |
EP2157051A2 (de) * | 2008-08-22 | 2010-02-24 | LDK Solar Hi-Tech Co., Ltd. | Erntevorrichtung zum Ernten von Polykristallin-Siliciumstangen, kombinierte Vorrichtung und Verfahren zur Verwendung davon |
US20100043972A1 (en) | 2008-08-22 | 2010-02-25 | Ldk Solar Hi-Tech Co., Ltd. | Apparatus for harvesting polycrystalline silicon rods and methods of using the same |
DE102009027830B3 (de) | 2009-07-20 | 2011-01-13 | Wacker Chemie Ag | Verfahren zur Entnahme von Siliciumstäben aus einem Reaktor |
US20120175613A1 (en) | 2009-09-16 | 2012-07-12 | Shin-Etsu Chemical Co., Ltd. | Polycrystalline silicon mass and process for producing polycrystalline silicon mass |
US20110250366A1 (en) * | 2010-04-12 | 2011-10-13 | Memc Electronic Materials, S.P.A. | Bell jar for siemens reactor including thermal radiation shield |
US20120237678A1 (en) | 2011-03-18 | 2012-09-20 | Memc Electronic Materials Spa | Tool For Harvesting Polycrystalline Silicon-coated Rods From A Chemical Vapor Deposition Reactor |
EP2607309A1 (de) * | 2011-12-21 | 2013-06-26 | Wacker Chemie AG | Polykristallines Siliciumstück und Verfahren zum Brechen eines Siliciumkörpers |
WO2013114858A1 (ja) * | 2012-02-02 | 2013-08-08 | 信越化学工業株式会社 | 多結晶シリコン棒搬出治具および多結晶シリコン棒の刈取方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020255672A1 (ja) | 2019-06-17 | 2020-12-24 | 株式会社トクヤマ | 棒状体、治具、取り外し方法およびシリコンロッドの製造方法 |
WO2020255664A1 (ja) | 2019-06-17 | 2020-12-24 | 株式会社トクヤマ | シリコンロッドの保護構造体およびシリコンロッドの製造方法 |
KR20220020823A (ko) | 2019-06-17 | 2022-02-21 | 가부시끼가이샤 도꾸야마 | 봉상체, 지그, 분리 방법 및 실리콘 로드의 제조 방법 |
KR20220024003A (ko) | 2019-06-17 | 2022-03-03 | 가부시끼가이샤 도꾸야마 | 실리콘 로드의 보호 구조체 및 실리콘 로드의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
CN105579395A (zh) | 2016-05-11 |
EP3049369A1 (de) | 2016-08-03 |
US20160214864A1 (en) | 2016-07-28 |
EP3049369B1 (de) | 2020-03-04 |
TW201512091A (zh) | 2015-04-01 |
US9738531B2 (en) | 2017-08-22 |
KR20160048214A (ko) | 2016-05-03 |
DE102013219070A1 (de) | 2015-03-26 |
TWI532678B (zh) | 2016-05-11 |
KR101955079B1 (ko) | 2019-03-06 |
CN105579395B (zh) | 2018-01-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3049369B1 (de) | Verfahren zur herstellung von polykristallinem silicium | |
EP3092192A1 (de) | Vorrichtung zum aufnehmen und transport eines siliciumstabs sowie verfahren zur herstellung von polykristallinem silicium | |
DE102012103295A1 (de) | Räumlich optimierte Anordnung zum Bearbeiten von Halbleitersubstraten | |
WO2011157382A1 (de) | Verfahren und vorrichtung zum herstellen von polykristallinen siliziumblöcken | |
EP2984033B1 (de) | Vorrichtung und verfahren zum ausbau von polykristallinen siliciumstäben aus einem reaktor | |
DE202012100839U1 (de) | Laborreaktor | |
EP2719663B1 (de) | Verfahren zur abscheidung von polykristallinem silizium | |
DE19934940A1 (de) | Vorrichtung zum Herstellen von gerichtet erstarrten Blöcken und Betriebsverfahren hierfür | |
EP2794087B1 (de) | Reaktor und verfahren zur herstellung von reinstsilizium | |
EP2984035B1 (de) | Gasverteiler für siemens-reaktor | |
EP3863803B1 (de) | Druckluftmeissel | |
EP3362408A1 (de) | Reaktor zur abscheidung von polykristallinem silicium | |
DE19710856B4 (de) | Hebezeug für eine Vorrichtung zum Ziehen von Einkristallen | |
AT506187B1 (de) | Vakuumkammer zum bedampfen oder beschichten | |
WO2013014248A1 (de) | Schnellverschluss für reaktoren und konvertoren | |
EP2422363A1 (de) | Verfahren und vorrichtung zum ein- und ausschleusen von substraten | |
DE112016002950T5 (de) | Reaktor für die Herstellung von polykristallinem Silicium und Verfahren zur Herstellung von polykristallinem Silicium | |
EP0863230A1 (de) | Vorrichtung zur Handhabung schwerer Bauteile einer in einem Traggestell abgestützten Kristallziehmaschine nach dem Czochralski-Verfahren | |
DE102021103795A1 (de) | Verfahren zum verhindern der kontamination einer grundplatte | |
EP0491992A1 (de) | Verfahren zur Asbestentsorgung aus elektrischen Geräten, insbesondere Nachtspeicheröfen sowie Vorrichtung zur Durchführung des Verfahrens | |
DE102011077862A1 (de) | System und Verfahren zum Zuführen eines Ausgangsmaterials in eine Schmelze zur Herstellung eines einkristallinen Werkstoffs | |
DE19608374A1 (de) | Vorrichtung zum Ziehen von Einkristallen | |
DE102014007957A1 (de) | Transfersystem |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201480052456.0 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14758333 Country of ref document: EP Kind code of ref document: A1 |
|
DPE1 | Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 15023567 Country of ref document: US |
|
REEP | Request for entry into the european phase |
Ref document number: 2014758333 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2014758333 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20167009361 Country of ref document: KR Kind code of ref document: A |