WO2015024330A1 - 彩色滤光层、彩膜基板、显示装置 - Google Patents

彩色滤光层、彩膜基板、显示装置 Download PDF

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Publication number
WO2015024330A1
WO2015024330A1 PCT/CN2013/088754 CN2013088754W WO2015024330A1 WO 2015024330 A1 WO2015024330 A1 WO 2015024330A1 CN 2013088754 W CN2013088754 W CN 2013088754W WO 2015024330 A1 WO2015024330 A1 WO 2015024330A1
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Prior art keywords
light
color filter
doped
quantum dots
prepared
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PCT/CN2013/088754
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English (en)
French (fr)
Inventor
董明
吴洪江
冯贺
肖宇
袁静
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京东方科技集团股份有限公司
北京京东方显示技术有限公司
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Priority to US14/381,323 priority Critical patent/US20160003448A1/en
Publication of WO2015024330A1 publication Critical patent/WO2015024330A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/22—Absorbing filters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots

Definitions

  • Color filter layer color film substrate, display device
  • the present invention relates to the field of display technologies, and in particular, to a color filter layer, a color filter substrate including the color filter layer, and a display device including the color filter substrate. Background technique
  • the incident light can be effectively filtered by the color film to achieve the purpose of color display, and the incident mixed color light is transmitted through the three kinds of filter films (for example, R, G, B) of the color filter substrate. Loss occurs. For example, when passing the red filter film (R), only red light can pass through, other light is blocked, causing the incident light to attenuate to a large extent, and many incident light is wasted, so how to effectively use it Incident light has become a hot topic of research.
  • R red filter film
  • Quantum dots also known as nanocrystals, are semiconductor nanostructures that bind excitons in three spatial directions. They are usually composed of semiconductor materials such as CdS, CdSe, CdTe, ZnSe, InP, InAs, etc. Or two or more kinds of semiconductor materials, such as CdSe-doped ZnS, CdSe-doped ZnSe, and the like. Common quantum dots are nanoparticles composed of compounds of Group II-VI or Group III-V elements. The quantum dots have a particle diameter generally between 1 and 10 nm. Since electrons and holes are quantum confinement, the continuous band structure becomes a discrete energy level structure with molecular characteristics, which can emit fluorescence after being excited. The emission spectrum of a quantum dot can be controlled by changing the size of the quantum dot. By changing the size of the quantum dot and its chemical composition, its emission spectrum can cover the entire visible region.
  • Upconversion luminescence also known as frequency upconversion luminescence, is a process that uses multiple steps of photon absorption to generate a radiation transition at a higher energy level.
  • the photon energy of the radiation is higher than the energy of the pumped photon, that is, the upconversion luminescence is Under the excitation of long-wavelength light, it is possible to continuously emit light having a shorter wavelength than the excitation wavelength.
  • the material capable of realizing the above-described up-conversion luminescence process is an up-conversion material in which rare earth ions are usually doped. Summary of the invention It is an object of the present invention to provide a color filter layer having high light utilization efficiency to solve the problem of low light utilization efficiency of the color filter layer in the prior art.
  • the technical solution adopted to solve the technical problem of the present invention is a color filter layer including a filter film and a light conversion material layer disposed on the light incident side of the filter film.
  • the term "light conversion material layer” refers to a layer of material that is capable of at least partially converting incident light into light having the same spectral properties as the filter film.
  • the light conversion material layer By setting the light conversion material layer to convert light of other frequencies in the incident light into light having the same spectral properties as the respective filter films, the effect of improving light utilization and display brightness can be achieved, and energy can be effectively saved and the display effect can be improved.
  • the layer of light converting material comprises quantum dots and/or upconverting materials.
  • the quantum dots are prepared from at least one of CdTe, CdSe doped ZnS, and CdSe doped ZnSe materials.
  • the filter film comprises a blue filter film
  • the layer of the light conversion material disposed on the light incident side of the blue filter film comprises an up-conversion material
  • the up-conversion material is prepared from at least one of NaCC TeC PreO ⁇ NaYF 4 doped Ho 3+ , rare earth doped germanium, rare earth doped Yb, and rare earth doped YF 3 material,
  • the upconversion material has a particle size ranging from 20 to 40 nm.
  • the filter film comprises a red filter film
  • the layer of light conversion material disposed on the light incident side of the red filter film comprises quantum dots.
  • the quantum dots are prepared from a CdTe material, and the CdTe quantum dots have a particle size ranging from 2.5 to 4.0 nm;
  • the quantum dots are prepared from a CdSe-doped ZnS material having a particle size ranging from 2.5 to 6.3 nm; or
  • the quantum dots are prepared from a CdSe-doped ZnSe material having a particle size ranging from 2.5 to 6.3 nm.
  • the filter film comprises a green filter film
  • the layer of light conversion material disposed on the light incident side of the green filter film comprises a quantum dot and/or an up-conversion material.
  • the quantum dots are prepared from a CdTe material.
  • the CdTe quantum dots have a particle size ranging from 2.5 to 4.0 nm, preferably from 2.5 to 3.0 nm;
  • the quantum dots are prepared from a CdSe-doped ZnS material having a particle size ranging from 2.5 to 6.3 nm, preferably from 2.5 to 4.5 nm; or
  • the quantum dots are prepared from a CdSe-doped ZnSe material, and the CdSe-doped ZnSe quantum dots have a particle size ranging from 2.5 to 6.3 nm, preferably from 2.5 to 4.5 nm;
  • the up-conversion material is prepared from at least one of NaYF 4 doped Ho 3+ , rare earth doped yttrium, rare earth doped Yb, and rare earth doped YF 3 material, the size of the upconverting material The range is 20-40 nm.
  • the object of the present invention also includes providing a color filter substrate, the color film substrate comprising a substrate and a plurality of color filter layers disposed at different positions on the surface of the substrate, wherein at least a portion of the color filter layer It is the color filter layer described above.
  • the color film substrate and the display device comprise a color filter layer having a light conversion material layer, which can convert light of other frequencies in the incident light into light having the same spectral properties as the respective filter films, thereby improving light utilization efficiency. And the effect of displaying brightness can effectively save energy and improve display.
  • FIG. 1 is a schematic view showing the structure of a color filter layer according to an embodiment of the present invention.
  • 2 is a partial structural view of a color filter substrate according to another embodiment of the present invention. among them:
  • the color filter layer includes a filter film 2, and a light conversion material layer 3 is disposed on a surface of the filter film 2 on the light incident side.
  • the light conversion material layer 3 serves to at least partially convert incident light into light that is consistent with the spectral properties of the filter film 2 to increase the utilization of the incident light 4.
  • the light conversion material layer 3 includes quantum dots and/or up-conversion materials, and the composition of the corresponding light conversion material layer 3 can be selected in accordance with the spectral properties of the filter film 2.
  • An up-conversion material is provided on the surface of the light-incident side of the blue filter film (B).
  • the up-conversion material is prepared by using at least one of NaCC TeC PreO ⁇ NaYF 4 doped Ho 3+ , rare earth doped yttrium, rare earth doped Yb, and rare earth doped YF 3 material.
  • the up-conversion material can be prepared according to methods known in the art, such as high temperature solid phase method, hydrothermal synthesis method, sol gel method or coprecipitation method, and the like.
  • the NaYF 4 doped Ho 3+ material can dissolve Ho 2 0 3 and Y 2 0 3 with nitric acid, then add ethylenediaminetetraacetic acid (EDTA) complex, and then add NaF reaction to prepare NaYF 4 doped Ho 3 . + complex.
  • EDTA ethylenediaminetetraacetic acid
  • the rare earth doped yttrium, the rare earth doped Yb, or the rare earth doped YF 3 rare earth refers to lanthanum (La), cerium (Ce), praseodymium (Pr), cerium (Nd), cerium (Pm), cerium (Sm), ⁇ (Eu), ⁇ (Gd), ⁇ (Tb), ⁇ (Dy), ⁇ (Ho), ⁇ (Er), ⁇ (Tm), ⁇ (Yb), ⁇ (Lu), ⁇ (Sc) and ⁇ (Y) These 17 elements.
  • the above rare earth element compound can also serve as a doped matrix.
  • the rare earth doped up-conversion material can be generally obtained by a sol-gel method, in which a compound to be doped and an ionic solution of a doped rare earth element are mixed, and the target is obtained by stirring and room temperature aging. product.
  • the above-described method of preparing the up-conversion material is also suitable for preparing the up-conversion material used in the other color filter layers of the present invention.
  • the particle size of the nanoparticles is controlled to be 20-40 nm, thereby partially converting the incident light 4 into light having the same spectral properties as the blue filter film (B) to improve incidence. Utilization of light 4.
  • the light conversion material layer 3 can be obtained by mixing the nanoparticles prepared by the above up-conversion material and a transparent binder into a solution and spraying or spin coating the surface of the light-receiving side of the blue filter film (B).
  • the binder may be a time curable, thermosetting, optically curable or pressure curable binder commonly used in the art.
  • a quantum dot is provided on the surface of the red filter film (R) on the light incident side.
  • the quantum dots are prepared by using at least one of CdTe, CdSe-doped ZnS, and CdSe-doped ZnSe materials.
  • the particle size of the control quantum dots ranges from 2.5 to 4.0 nm.
  • the particle size of the control quantum dots ranges from 2.5 to 6.3 nm; when CdSe is used
  • the particle size of the control quantum dot ranges from 2.5 to 6.3 nm.
  • the incident light 4 is partially converted into light rays having the same spectral properties as the red filter film (R) by controlling the particle diameter of the above quantum dots to improve the utilization of the incident light 4.
  • the quantum dots can be prepared according to methods known in the art, such as metal organic synthesis, direct aqueous synthesis, and the like.
  • the following preparation methods can be exemplified as the examples, but the present invention is not limited thereto.
  • Preparation method of CdTe quantum dots Mixing an aqueous solution of CdCl 2 and mercaptoethylamine to obtain a precursor solution of cadmium, adding NaHTe with stirring, adjusting the pH of the solution to 6, and then putting the solution into a reaction vessel to heat the reaction, and then cooling to room temperature. CdTe quantum dots.
  • Preparation method of CdSe-doped ZnSe quantum dots a certain mass of cadmium oxide and stearic acid are mixed and heated, and trioctylphosphine oxide and hexadecylamine are added to rapidly inject Se solution (selenium is dissolved in trioctylphosphine oxide) At this time, a CdSe quantum dot solution is obtained; then a solution of zinc stearate in benzene is added thereto, and after the reaction is completed, the temperature is lowered, and CdSe-doped ZnSe quantum dots are obtained by centrifugation.
  • a CdSe quantum dot solution is prepared by referring to the above method for preparing CdSe-doped ZnSe quantum dots; then, an aqueous solution of zinc acetate and sodium sulfide is mixed and heated and stirred to obtain Zn and S. An aqueous precursor solution; then, slowly add an aqueous solution of Zn and S precursor to the CdSe quantum dot solution under argon Ar 2 protection, react under heating and stirring, and then cool Drying can obtain CdSe-doped ZnS quantum dots.
  • the CdSe-doped ZnSe quantum dots and the CdSe-doped ZnS quantum dots thus obtained are actually a core-shell structure, that is, a layer of ZnSe and ZnS on the surface of the CdSe nanoparticles.
  • the above-described method of preparing quantum dots is also suitable for preparing quantum dots used in other color filter layers of the present invention.
  • the photo-converting material layer 3 can be obtained by mixing the quantum dots prepared by the above materials and a transparent binder into a solution and spraying or spin-coating the surface of the red filter film (R) on the light-incident side.
  • a quantum dot and/or an upper conversion material is provided on the surface of the light-incident side of the green filter film (G).
  • the quantum dots are prepared by using at least one of CdTe, CdSe-doped ZnS, and CdSe-doped ZnSe materials.
  • the particle size of the control quantum dot ranges from 2.5 to 4.0 nm, preferably from 2.5 to 3.0 nm.
  • the particle size of the controlled quantum dot ranges from 2.5 to 6.3 nm, preferably 2.5-4.5 nm;
  • the particle size of the control quantum dot ranges from 2.5 to 6.3 nm, preferably from 2.5 to 4.5 nm.
  • the incident light 4 is partially converted into light rays having the same spectral properties as the green filter film (G) by controlling the particle diameter of the above quantum dots to improve the utilization of the incident light 4.
  • the up-conversion material is prepared by using at least one of NaYF 4 doped Ho 3+ , rare earth doped yttrium, rare earth doped Yb, and rare earth doped YF 3 material.
  • the particle size of the nanoparticles is controlled to be 20-40 nm, thereby partially converting the incident light 4 into light rays having the spectral properties of the green filter film (G) to enhance the incident light. 4 utilization rate.
  • the nano-particles prepared by the above quantum dots and/or up-conversion materials are mixed with a transparent binder into a solution and sprayed or spin-coated on the surface of the light-incident side of the green filter film (G) to obtain a light-converting material.
  • Layer 3 The nano-particles prepared by the above quantum dots and/or up-conversion materials are mixed with a transparent binder into a solution and sprayed or spin-coated on the surface of the light-incident side of the green filter film (G) to obtain a light-converting material.
  • the light conversion material layer 3 matched with the filter film can be selected to be capable of at least partially converting the incident light 4 to have the same spectral properties as the filter film.
  • Light light transforms material layer 3 therefore, this
  • the technical solutions are also within the protection scope of the present invention; as long as a layer of the light conversion material is provided on a part of the filter film, it belongs to the protection range of the present invention, and it is not necessary to have all the light conversion material layers on the filter film;
  • the size of the dot or upconverting material can be specifically selected depending on the nature of the incident light source in the particular application and the wavelength of the target light that needs to be converted.
  • the color filter layer prepared according to the present invention can achieve the effect of improving light utilization efficiency and display brightness by providing a light conversion material layer to convert light of other frequencies in the incident light into light having the same spectral properties as each filter film. , can effectively save energy and improve display.
  • the color filter substrate includes a substrate 1 and color filters of different colors disposed at different positions on the surface of the substrate 1.
  • the color filter layer includes a filter film 2, the filter film 2 is disposed on the substrate 1, and a light conversion material layer 3 is disposed on a surface of the filter film 2 on the light incident side.
  • the light converting material layer 3 serves to at least partially convert the incident light into light rays having the spectral properties of the filter film 2 to improve the utilization of the incident light 4.
  • the light conversion material layer 3 includes quantum dots and/or up-conversion materials, and the composition of the corresponding light conversion material layer 3 can be selected in accordance with the spectral properties of the filter film 2.
  • An up-conversion material is provided on the surface of the light-incident side of the blue filter film (B).
  • the up-conversion material is prepared by using at least one of NaCC TeC PreO ⁇ NaYF 4 doped Ho 3+ , rare earth doped yttrium, rare earth doped Yb, and rare earth doped YF 3 material.
  • the NaCC TeC PreOn is obtained by heat-sealing NaC0 3 , Te0 2 and P Ou water by hydrothermal synthesis.
  • the NaYF 4 doped Ho 3+ material can dissolve Ho 2 0 3 and Y 2 0 3 with nitric acid, then add ethylenediaminetetraacetic acid (EDTA) complex, and then add NaF reaction to prepare NaYF4 doped Ho 3+ Complex.
  • EDTA ethylenediaminetetraacetic acid
  • the rare earth doped yttrium, rare earth doped Yb, rare earth doped YF 3 rare earth refers to lanthanum (La), cerium (Ce), praseodymium (Pr), cerium (Nd), cerium (Pm), cerium ( Sm), ⁇ (Eu), ⁇ (Gd), ⁇ (Tb), ⁇ (Dy), ⁇ (Ho), ⁇ (Er), ⁇ (Tm), ⁇ (Yb), ⁇ (Lu), ⁇ ( Sc) and ⁇ (Y) These 17 elements.
  • the above rare earth element compounds can also be used as a doping matrix.
  • the particle size of the nanoparticles is controlled to be 20-40 nm, thereby partially converting the incident light 4 into light having the same spectral properties as the blue filter film (B) to improve incidence. Utilization of light 4.
  • the light conversion material layer 3 can be obtained by mixing the nanoparticles prepared by the above up-conversion material with a transparent binder into a solution and spraying or spin coating the surface of the light-receiving side of the blue filter film (B).
  • the binder may be a time curable, heat curable, optically curable or pressure curable binder commonly used in the art.
  • a quantum dot is provided on the surface of the red filter film (R) on the light incident side.
  • the quantum dots are prepared by using at least one of CdTe, CdSe-doped ZnS, and CdSe-doped ZnSe materials.
  • the particle size of the control quantum dots ranges from 2.5 to 4.0 nm.
  • the particle size of the control quantum dots ranges from 2.5 to 6.3 nm; when CdSe is used
  • the particle size of the control quantum dot ranges from 2.5 to 6.3 nm.
  • the incident light 4 is partially converted into light rays having the same spectral properties as the red filter film (R) by controlling the particle diameter of the above quantum dots to improve the utilization of the incident light 4.
  • the photo-converting material layer 3 can be obtained by mixing the quantum dots prepared by the above materials and a transparent binder into a solution and spraying or spin-coating the surface of the red filter film (R) on the light-incident side.
  • a quantum dot and/or an upper conversion material is provided on the surface of the light-incident side of the green filter film (G).
  • the quantum dots are prepared by using at least one of CdTe, CdSe-doped ZnS, and CdSe-doped ZnSe materials.
  • the particle size of the control quantum dot ranges from 2.5 to 4.0 nm, preferably from 2.5 to 3.0 nm.
  • a CdSe-doped ZnS material is used to prepare a quantum
  • the particle size of the control quantum dot ranges from 2.5 to 6.3 nm, preferably from 2.5 to 4.5 nm.
  • the particle size of the controlled quantum dot ranges from 2.5 to 6.3 nm, preferably 2.5- 4.5 nm.
  • the incident light 4 is partially converted into light rays conforming to the spectral properties of the green filter film (G) by controlling the particle diameter of the above quantum dots to improve the utilization of the incident light 4.
  • the up-conversion material is prepared by using at least one of NaYF 4 doped Ho 3+ , rare earth doped yttrium, rare earth doped Yb, and rare earth doped YF 3 material.
  • the particle size of the nanoparticles is controlled to be 20-40 nm, thereby partially converting the incident light 4 into light rays having the spectral properties of the green filter film (G) to enhance the incident light. 4 utilization rate.
  • the nano-particles prepared by the above quantum dots and/or up-conversion materials are mixed with a transparent binder into a solution and sprayed or spin-coated on the surface of the light-incident side of the green filter film (G) to obtain a light-converting material.
  • Layer 3 The nano-particles prepared by the above quantum dots and/or up-conversion materials are mixed with a transparent binder into a solution and sprayed or spin-coated on the surface of the light-incident side of the green filter film (G) to obtain a light-converting material.
  • the light conversion material layer 3 matched with the filter film can be selected to enable the incident light 4 to be at least partially converted to have the same spectral properties as the filter film.
  • Light-converting material layer 3 of light therefore, these technical solutions are also within the scope of the present invention; as long as a layer of light-converting material is provided on a part of the filter film, it belongs to the protection scope of the present invention, and it is not necessary to require all the filter films.
  • a layer of light-converting material is provided thereon; the size of the quantum dot or up-converting material can be specifically selected according to the nature of the incident light source in a specific application and the wavelength of the target light to be converted.
  • the liquid crystal display device which may be a liquid crystal display device including the above-described color filter substrate.
  • the liquid crystal display device is mainly composed of a backlight, a liquid crystal panel (panel), a structural member (e.g., including a bezel, a back sheet, etc.), a driving circuit, and the like.
  • the display device can also be of other types such as an OLED (Organic Light Emitting Diode) display device.
  • OLED Organic Light Emitting Diode
  • the color film substrate in the display device provided by the invention comprises a layer of light conversion material, Converting light of other frequencies in the incident light into light having the same spectral properties as each filter film can achieve an effect of improving light utilization efficiency and display brightness, and can effectively save energy and improve display efficiency.
  • the color filter layer and the color filter substrate of Examples 1-6 were prepared as follows: First, a black matrix BM layer was prepared on glass, and according to various examples The R, G, and B filter layers are separately set; then, the corresponding quantum dot or upconverting material is substantially single particles by a filter repairing device (Jupite 7392-6WSTLT3RVR-HG, V-Technology) The thickness is sprayed on the surface of the corresponding R, G, and B light entrance sides to obtain a color filter layer, and then a flat layer (overcoat, ie, OC layer) is coated on the color filter layer, and a column spacer is prepared. (Photopacer, ie PS layer), thereby completing the preparation of the color film substrate. Wherein the upconversion material and quantum dots are prepared according to the method described above.
  • the color filter layer and the display device prepared in Example 1-6 were subjected to performance test by the following methods: The light of the color filter substrate prepared in each of the examples was tested using a spectrophotometer (AP41-0125, Otsuka Co., Ltd.). The transmittance is compared with a color filter substrate to which no quantum dots and up-converting luminescent materials are added. The high transmittance indicates that the color utilization ratio of the color filter substrate is high, so that the display device made of the display device has high display brightness. .
  • the color filter layer and the color filter substrate of Comparative Example 1-3 differed from Examples 1-6 only in that no light conversion material was applied to the filter film (B, G, R).
  • the performance test was carried out in the same manner as in the examples, and the results are shown in Table 1. Table 1
  • the filter film can be obtained from Beijing BOE Co., Ltd.
  • the reagents used in the process of preparing upconverting materials and quantum dots and the binder (terpineol) are available from China National Pharmaceutical Group Chemical Reagent Co., Ltd.
  • the upconverting material or quantum dots are mixed with the binder in a ratio of lg: 100 ml.
  • the molar ratio of the conversion material in Ho 3+ doped NaYF 4 Ho 3+ is less than 0.7%.
  • CdSe-doped ZnS is a core-shell structure, that is, there is a layer of ZnS on the surface of CdSe nanoparticles, and Cd:Zn is about 1:1.9 (element ratio).

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Abstract

提供了一种彩色滤光层，包括这种彩色滤光层的彩膜基板以及包括这种彩膜基板的显示装置。彩色滤光层包括滤光膜（2）和设置于滤光膜（2）入光侧的光转换材料层（3）。光转换材料层把入射光中其他频率的光转换为与各滤光膜光谱性质形同的光，可以达到提高光的利用率和显示亮度的效果，能有效地节省能源并提高显示效果。

Description

彩色滤光层、 彩膜基板、 显示装置 技术领域
本发明属于显示技术领域， 具体涉及一种彩色滤光层， 包括 该彩色滤光层的彩膜基板， 以及包括该彩膜基板的显示装置。 背景技术
在显示装置中， 可通过彩膜对入射过来的光进行有效的过滤 以达到进行彩色显示的目的， 入射的混色光透射过彩膜基板的三 种滤光膜（例如 R、 G、 B )后均会发生损失， 例如， 经过红色滤 光膜（R )时， 只有红色光能够透过， 其它光则被遮挡， 导致入射 光很大程度的衰减， 很多入射光被浪费， 因此如何有效地利用入 射光成为研究的热点。
量子点， 又可称为纳米晶， 是把激子在三个空间方向上束缚 住的半导体纳米结构， 通常由半导体材料如 CdS、 CdSe、 CdTe、 ZnSe、 InP、 InAs等组成， 也可由两种或两种以上的半导体材料组 成， 例如 CdSe掺杂 ZnS、 CdSe掺杂 ZnSe等。 常见的量子点是由 II - VI族或 III - V族元素的化合物组成的纳米颗粒。 量子点的粒 径一般介于 1 ~ 10nm之间， 由于电子和空穴被量子限域， 连续的 能带结构变成具有分子特性的分立能级结构， 受激后可以发射荧 光。 量子点的发射光谱可以通过改变量子点的尺寸大小来控制。 通过改变量子点的尺寸和它的化学组成可以使其发射光谱覆盖整 个可见光区。
上转换发光也称为频率上转换发光， 是一种利用多步光子吸 收在较高能级上产生辐射跃迁的过程， 辐射的光子能量比抽运光 子的能量高， 也就是说上转换发光是在长波长光的激发下， 能够 持续发射波长比激发波长短的光。 能够实现上述上转换发光过程 的材料即为上转换材料， 其中通常都掺杂有稀土离子。 发明内容 本发明的目的是提供一种光利用率高的彩色滤光层， 以解决 现有技术中彩色滤光层的光利用率低的问题。
解决本发明技术问题所采用的技术方案是一种彩色滤光层， 包括滤光膜和设置于滤光膜入光侧的光转换材料层。
在本文中， 术语 "光转换材料层" 是指能够将入射光至少部 分地转换为与滤光膜光谱性质相同的光的材料层。
通过设置光转换材料层把入射光中其他频率的光转换为与各 滤光膜光谱性质相同的光， 可以达到提高光的利用率和显示亮度 的效果， 能有效地节省能源并提高显示效果。
优选的是， 所述的光转换材料层包括量子点和 /或上转换材 料。
优选的是，所述的量子点是由 CdTe、 CdSe掺杂 ZnS、和 CdSe 掺杂 ZnSe材料中的至少一种制备的。
优选的是， 所述的滤光膜包括蓝色滤光膜， 设置在所述蓝色 滤光膜入光侧的光转换材料层包括上转换材料。
进一步优选的是，所述的上转换材料是由 NaCC TeC PreO^ NaYF4掺杂 Ho3+、 稀土掺杂铒、 稀土掺杂 Yb、 和稀土掺杂 YF3材 料中的至少一种制备的， 所述的上转换材料的粒径范围为 20-40nm。
优选的是， 所述的滤光膜包括红色滤光膜， 设置在所述红色 滤光膜入光侧的光转换材料层包括量子点。
进一步优选的是， 所述的量子点是由 CdTe 材料制备的， 所 述的 CdTe量子点的粒径范围为 2.5-4.0nm;
所述的量子点是由 CdSe掺杂 ZnS的材料制备的，所述的 CdSe 掺杂 ZnS的量子点的粒径范围为 2.5-6.3nm; 或者
所述的量子点是由 CdSe掺杂 ZnSe 的材料制备的， 所述的 CdSe掺杂 ZnSe的量子点的粒径范围为 2.5-6.3nm。
优选的是， 所述的滤光膜包括绿色滤光膜， 设置在所述绿色 滤光膜入光侧的光转换材料层包括量子点和 /或上转换材料。
进一步优选的是， 所述的量子点是由 CdTe 材料制备的， 所 述的 CdTe量子点的粒径范围为 2.5-4.0nm, 优选 2.5-3.0 nm;
所述的量子点是由 CdSe掺杂 ZnS的材料制备的，所述的 CdSe 掺杂 ZnS的量子点的粒径范围为 2.5-6.3nm, 优选 2.5-4.5nm; 或 者
所述的量子点是由 CdSe掺杂 ZnSe 的材料制备的， 所述的 CdSe掺杂 ZnSe的量子点的粒径范围为 2.5-6.3nm,优选 2.5-4.5nm; 以及
所述的上转换材料是由 NaYF4掺杂 Ho3+、 稀土掺杂铒、 稀土 掺杂 Yb、 和稀土掺杂 YF3材料中的至少一种制备的， 所述的上转 换材料的粒径范围为 20-40nm。
本发明的目的还包括提供一种彩膜基板， 所述的彩膜基板包 括基底以及多种颜色的、 设置在所述基底表面上的不同位置的彩 色滤光层， 其中至少部分彩色滤光层为上述的彩色滤光层。
本发明的目的还包括提供一种显示装置， 所述的显示装置包 括上述的彩膜基板。
由于彩膜基板和显示装置包括具有光转换材料层的彩色滤光 层， 其能够把入射光中其他频率的光转换为与各滤光膜光谱性质 相同的光， 因而可以达到提高光的利用率和显示亮度的效果， 能 有效地节省能源并提高显示效果。 附图说明
图 1为本发明一个实施方案的彩色滤光层的结构示意图。 图 2为本发明另一实施方案的彩膜基板的部分结构示意图。 其中：
1-基底； 2-滤光膜； 3-光转换材料层； 4-入射光。 具体实施方式
为使本领域技术人员更好地理解本发明的技术方案， 下面结 合附图和具体实施方式对本发明作进一步详细的描述。
本发明的一个实施方案提供一种彩色滤光层， 如图 1所示， 所述的彩色滤光层包括滤光膜 2,在滤光膜 2的入光侧的表面设置 光转换材料层 3。光转换材料层 3用于将入射光至少部分地转换为 与滤光膜 2光谱性质一致的光线， 以提高入射光 4的利用率。
光转换材料层 3包括量子点和 /或上转换材料， 可以根据滤光 膜 2的光谱性质选择相应的光转换材料层 3的组成。
以下分别以本领域常用的三种滤光膜 2 ( R、 G、 B ) 为例进 行介绍， 如图 1所示：
1 )在蓝色滤光膜（B ) 的入光侧的表面设置上转换材料。 其中， 上转换材料是采用 NaCC TeC PreO^ NaYF4掺杂 Ho3+、 稀土掺杂铒、 稀土掺杂 Yb、 稀土掺杂 YF3材料中的至少一 种制备的。 所述上转换材料可以根据本领域已知的方法制备得到， 例如高温固相法、 水热合成法、 溶胶凝胶法或共沉淀法等。
其中， 所述的
Figure imgf000005_0001
可采用水热合成法将 NaC03、 Te02、 Pr6Ou水热合成制得。
所述的 NaYF4掺杂 Ho3+材料可以用硝酸溶解 Ho203和 Y203, 然后加入乙二胺四乙酸（EDTA )络合， 然后加入 NaF反应制得 NaYF4掺杂 Ho3+的络合物。
所述的稀土掺杂铒、 稀土掺杂 Yb、 或稀土掺杂 YF3中的稀土 是指镧 (La)、 铈 (Ce)、 镨 (Pr)、 钕 (Nd)、 钷 (Pm)、 钐（Sm)、 铕 (Eu)、 钆 (Gd)、 铽 (Tb)、 镝 (Dy)、 钬 (Ho)、 铒 (Er)、 铥 (Tm)、 镱 (Yb)、 镥 (Lu), 钪 (Sc)和钇 (Y) 这 17种元素。 当然， 上述稀土元素的化合 物也可作为掺杂的基质。 所述的稀土掺杂的上转换材料一般可以 通过溶胶凝胶法制得， 在该方法中， 将待掺杂的化合物和掺杂的 稀土元素的离子溶液进行混合， 通过搅拌和室温陈化获得目标产 物。
上述上转换材料的制备方法也适合于制备本发明其它彩色滤 光层中所用的上转换材料。
当采用上述的上转换材料制备纳米颗粒时控制纳米颗粒的粒 径范围为 20-40nm, 从而使入射光 4部分地转换为与蓝色滤光膜 ( B )光谱性质一致的光线， 以提高入射光 4的利用率。 将上述上转换材料制备的纳米颗粒与透明的粘结剂混合为溶 液并喷涂或旋涂于蓝色滤光膜（B )的入光侧的表面， 即可制得光 转换材料层 3。所述的粘结剂可以是本领域常用的时间固化性、热 固化性、 光学固化性或压力固化性的粘结剂。
2 )在红色滤光膜（R ) 的入光侧的表面设置量子点。
其中， 所述的量子点是采用 CdTe、 CdSe掺杂 ZnS、 和 CdSe 掺杂 ZnSe材料中的至少一种制备的。
当采用 CdTe 材料制备量子点时， 控制量子点的粒径范围为 2.5-4.0nm; 当采用 CdSe掺杂 ZnS材料制备量子点时， 控制量子 点的粒径范围为 2.5-6.3nm; 当采用 CdSe掺杂 ZnSe材料制备量子 点时， 控制量子点的粒径范围为 2.5-6.3nm。 通过控制上述量子点 的粒径使入射光 4部分地转换为与红色滤光膜（R )光谱性质一致 的光线， 以提高入射光 4的利用率。
所述量子点可以根据本领域已知的方法制备得到， 例如金属 有机合成法、 水相直接合成法等。 作为示例可以列举以下制备方 法， 但本发明并不受限于此。
CdTe量子点的制备方法： 将 CdCl2和巯基乙胺的水溶液混合 得到镉的前驱体溶液， 搅拌加入 NaHTe, 调节溶液 pH到 6, 然后 把溶液放入反应釜中加热反应， 之后冷却至室温得到 CdTe 量子 点。
CdSe掺杂 ZnSe量子点的制备方法： 将一定质量的氧化镉和 硬脂酸混合加热， 加入三辛基氧化膦和十六烷基胺， 快速注入 Se 溶液 (硒溶解在三辛基氧化膦中）， 此时得到 CdSe量子点溶液； 然 后将硬脂酸锌的曱苯溶液加入其中， 反应完成后降温， 经离心分 离得到 CdSe掺杂 ZnSe量子点。
CdSe掺杂 ZnS量子点的制备方法：首先，参照上述制备 CdSe 掺杂 ZnSe量子点的方法制备得到 CdSe量子点溶液； 然后， 将醋 酸锌和硫化钠的水溶液混合加热并且搅拌，得到提供 Zn和 S的前 驱体水溶液； 然后， 在氩气 Ar2保护下向 CdSe量子点溶液中緩慢 加入 Zn和 S的前驱体水溶液， 在加热搅拌条件下反应， 然后冷却 干燥即可得到 CdSe掺杂 ZnS量子点。
由此得到的 CdSe掺杂 ZnSe量子点和 CdSe掺杂 ZnS量子点 实际为核壳结构， 即在 CdSe纳米颗粒表面有一层 ZnSe和 ZnS。
上述量子点的制备方法也适合于制备本发明其它彩色滤光层 中所用的量子点。
将上述材料制备的量子点与透明的粘结剂混合为溶液并喷涂 或旋涂于红色滤光膜（R )的入光侧的表面， 即可制得光转换材料 层 3。
3 )在绿色滤光膜（G )的入光侧的表面设置量子点和 /或上转 换材料。
其中， 所述的量子点是采用 CdTe、 CdSe掺杂 ZnS、 和 CdSe 掺杂 ZnSe材料中的至少一种制备的。
当采用 CdTe 材料制备量子点时， 控制量子点的粒径范围为 2.5-4.0nm, 优选 2.5-3.0nm; 当采用 CdSe掺杂 ZnS材料制备量子 点时， 控制量子点的粒径范围为 2.5-6.3nm, 优选 2.5-4.5nm; 当采 用 CdSe掺杂 ZnSe材料制备量子点时， 控制量子点的粒径范围为 2.5-6.3nm, 优选 2.5-4.5nm。 通过控制上述量子点的粒径使入射光 4部分地转换为与绿色滤光膜（G )光谱性质一致的光线， 以提高 入射光 4的利用率。
其中， 上转换材料是采用 NaYF4掺杂 Ho3+、 稀土掺杂铒、 稀 土掺杂 Yb、 和稀土掺杂 YF3材料中的至少一种制备的。
当采用上述的上转换材料制备纳米颗粒时控制纳米颗粒的粒 径范围为 20-40nm, 从而使入射光 4部分地转换为与绿色滤光膜 ( G )光谱性质一致的光线， 以提高入射光 4的利用率。
将上述量子点和 /或上转换材料制备的纳米颗粒与透明的粘 结剂混合为溶液并喷涂或旋涂于绿色滤光膜（G )的入光侧的表面， 即可制得光转换材料层 3。
可以理解的是， 对于其他类型的滤光膜， 可以选择与该滤光 膜相配合的光转换材料层 3,制作成能够使入射光 4至少部分地转 换为与该滤光膜光谱性质相同的光线的光转换材料层 3, 因此，这 些技术方案也属于本发明的保护范围； 只要部分滤光膜上设有光 转换材料层， 即属于本发明的保护范围， 而不必要求所有的滤光 膜上都设有光转换材料层； 量子点或上转换材料的尺寸可以根据 具体应用中入射光源的性质以及需要转换的目标光的波长来进行 具体的选择。
另外， 所述的量子点或上转换材料纳米颗粒的制备为现有技 术范畴， 在此不再——赘述。
按照本发明制备的彩色滤光层通过设置光转换材料层， 把入 射光中的其他频率的光转换为与各滤光膜光谱性质相同的光， 可 以达到提高光的利用率与显示亮度的效果， 能有效地节省能源以 及提高显示效果。
本发明的另一实施方案提供一种彩膜基板， 如图 2所示， 所 述的彩膜基板包括基底 1 以及多种颜色的、 设置在所述基底 1表 面上的不同位置的彩色滤光层， 所述的彩色滤光层包括滤光膜 2, 滤光膜 2设置于基底 1上， 在滤光膜 2的入光侧的表面设置光转 换材料层 3。光转换材料层 3用于将入射光至少部分地转换为与滤 光膜 2光谱性质一致的光线， 以提高入射光 4的利用率。
光转换材料层 3包括量子点和 /或上转换材料， 可以根据滤光 膜 2的光谱性质选择相应的光转换材料层 3的组成。
以下分别以彩膜基板通常包括的三种滤光膜 2 ( R、 G、 B ) 为例进行介绍， 如图 2所示：
1 )在蓝色滤光膜（B ) 的入光侧的表面设置上转换材料。 其中， 上转换材料是采用 NaCC TeC PreO^ NaYF4掺杂 Ho3+、 稀土掺杂铒、 稀土掺杂 Yb、 和稀土掺杂 YF3材料中的至少 一种制备的。
其中， 所述的 NaCC TeC PreOn采用水热合成法将 NaC03、 Te02、 P Ou水热合制得。
所述的 NaYF4掺杂 Ho3+材料可以用硝酸溶解 Ho203和 Y203, 然后加入乙二胺四乙酸（EDTA )络合， 然后加入 NaF反应制得 NaYF4掺杂 Ho3+的络合物。 所述的稀土掺杂铒、 稀土掺杂 Yb、 稀土掺杂 YF3中的稀土是 指镧 (La)、 铈 (Ce)、 镨 (Pr)、 钕 (Nd)、 钷 (Pm)、 钐（Sm)、 铕 (Eu)、 钆 (Gd)、铽 (Tb)、镝 (Dy)、钬 (Ho)、 铒 (Er)、铥 (Tm)、镱 (Yb)、镥 (Lu), 钪 (Sc)和钇 (Y) 这 17种元素。 当然上述稀土元素的化合物也可作 为掺杂的基质。
当采用上述的上转换材料制备纳米颗粒时控制纳米颗粒的粒 径范围为 20-40nm, 从而使入射光 4部分地转换为与蓝色滤光膜 ( B )光谱性质一致的光线， 以提高入射光 4的利用率。
将上述上转换材料制备的纳米颗粒与透明的粘结剂混合为溶 液并喷涂或旋涂于蓝色滤光膜（B )的入光侧的表面， 即可制得光 转换材料层 3。所述的粘结剂可以是本领域常用的时间固化性、热 固化性、 光学固化性或压力固化性的粘结剂。
2 )在红色滤光膜（R ) 的入光侧的表面设置量子点。
其中， 所述的量子点是采用 CdTe、 CdSe掺杂 ZnS、 和 CdSe 掺杂 ZnSe材料中的至少一种制备的。
当采用 CdTe 材料制备量子点时， 控制量子点的粒径范围为 2.5-4.0nm; 当采用 CdSe掺杂 ZnS材料制备量子点时， 控制量子 点的粒径范围为 2.5-6.3nm; 当采用 CdSe掺杂 ZnSe材料制备量子 点时， 控制量子点的粒径范围为 2.5-6.3nm。 通过控制上述量子点 的粒径使入射光 4部分地转换为与红色滤光膜（R )光谱性质一致 的光线， 以提高入射光 4的利用率。
将上述材料制备的量子点与透明的粘结剂混合为溶液并喷涂 或旋涂于红色滤光膜（R )的入光侧的表面， 即可制得光转换材料 层 3。
3 )在绿色滤光膜（G )的入光侧的表面设置量子点和 /或上转 换材料。
其中， 所述的量子点是采用 CdTe、 CdSe掺杂 ZnS、 和 CdSe 掺杂 ZnSe材料中的至少一种制备的。
当采用 CdTe 材料制备量子点时， 控制量子点的粒径范围为 2.5-4.0nm, 优选 2.5-3.0nm; 当采用 CdSe掺杂 ZnS材料制备量子 点时， 控制量子点的粒径范围为 2.5-6.3nm, 优选 2.5-4.5nm; 当采 用 CdSe掺杂 ZnSe材料制备量子点时， 控制量子点的粒径范围为 2.5-6.3nm, 优选 2.5-4.5nm。 通过控制上述量子点的粒径使入射光 4部分地转换为与绿色滤光膜（G )光谱性质一致的光线， 以提高 入射光 4的利用率。
其中， 上转换材料是采用 NaYF4掺杂 Ho3+、 稀土掺杂铒、 稀 土掺杂 Yb、 和稀土掺杂 YF3材料中的至少一种制备的。
当采用上述的上转换材料制备纳米颗粒时控制纳米颗粒的粒 径范围为 20-40nm, 从而使入射光 4部分地转换为与绿色滤光膜 ( G )光谱性质一致的光线， 以提高入射光 4的利用率。
将上述量子点和 /或上转换材料制备的纳米颗粒与透明的粘 结剂混合为溶液并喷涂或旋涂于绿色滤光膜（G )的入光侧的表面， 即可制得光转换材料层 3。
可以理解的是， 对于其他类型的滤光膜， 可选择与该滤光膜 相配合的光转换材料层 3,制作成能够使入射光 4至少部分地转换 为与该滤光膜光谱性质相同的光线的光转换材料层 3 , 因此， 这些 技术方案也属于本发明的保护范围； 只要部分滤光膜上设有光转 换材料层， 即属于本发明的保护范围， 而不必要求所有的滤光膜 上都设有光转换材料层； 量子点或上转换材料的尺寸可以根据具 体应用中入射光源的性质以及需要转换的目标光的波长来进行具 体的选择。
另外， 如上所述， 量子点或上转换材料纳米颗粒的制备为现 有技术范畴， 在此不再——赘述。
本发明的另一实施方案提供一种显示装置， 该显示装置可以 是液晶显示装置， 该液晶显示装置包括上述的彩膜基板。 例如， 所述液晶显示装置主要由背光源、 液晶屏 （面板） 、 结构件 （例 如包括边框、 背板等） 、 驱动电路等组成。
当然， 显示装置也可为 OLED (有机发光二极管）显示装置 等其他的类型。
本发明提供的显示装置中的彩膜基板包括光转换材料层， 能 把入射光中的其他频率的光转换为与各滤光膜光谱性质相同的 光， 可以达到提高光的利用率与显示亮度的效果， 能有效地节省 能源以及提高显示效果。 实施例
实施例 1-6
采用表 1 中所列的滤光膜和光转换材料， 按照以下方法制备 得到实施例 1-6 的彩色滤光层和彩膜基板： 首先， 在玻璃上制备 黑矩阵 BM层， 并根据各个实施例的要求分别设置 R、 G、 B滤光 膜层；然后，通过滤光膜修补设备（ Jupite 7392-6WSTLT3RVR-HG, V-Technology公司）将相应的量子点或上转换材料以基本上为单 颗粒的厚度喷涂在相应的 R、 G、 B层入光侧的表面上， 得到彩色 滤光层， 再在该彩色滤光层上涂覆平坦层 （overcoat, 即 OC层） 以及制备柱状隔垫物 （ photospacer, 即 PS层） ， 从而完成彩膜基 板的制备。 其中， 所述上转换材料和量子点是按照前文所述方法 制备得到的。
采用如下方法对实施例 1-6所制备得到的彩色滤光层和显示 装置进行性能测试： 使用分光光度计 （AP41-0125, Otsuka株式会 社） 测试各个实施例中制得的彩膜基板的光透过率， 与未添加量 子点和上转换发光材料的彩膜基板进行对比， 透过率高就说明该 彩膜基板的光利用率高， 因此由其制成的显示装置的显示亮度也 高。
实施例 1-6的彩色滤光层的组成及测试结果见表 1。 对比例 1-3
对比例 1-3的彩色滤光层、彩膜基板与实施例 1-6的区别仅在 于： 滤光膜（B、 G、 R )上不施加光转换材料。 按照与实施例相 同的方式对其进行性能测试， 结果见表 1。 表 1
Figure imgf000012_0001
注： 所述滤光膜均可得自北京京东方公司， 制备上转换材料和量子点 过程中所用的试剂以及粘合剂 （松油醇）均可得自中国国药集团化学试剂有 限公司。 上转换材料或量子点与粘合剂按 lg： 100ml的比例混合。 上转换材 料 NaYF4掺杂 Ho3+中 Ho3+的摩尔比小于 0.7%。 CdSe掺杂 ZnS为核壳结构， 即在 CdSe纳米颗粒表面有一层 ZnS， Cd:Zn大约为 1 :1.9 (元素含量比） 。 由表 1 中给出的测试结果可以看出， 本发明的具有光转换材 料层的彩色滤光层的光利用率相对于对比例均有显著的增加， 说 明所述光转换材料层的设置确实可以达到提高光的利用率与显示 亮度的效果， 因而能有效地节省能源以及提高显示效果。 可以理解的是， 以上实施方式和实施例仅仅是为了说明本发 明的原理而采用的示例性实施方式， 然而本发明并不局限于此。 对于本领域内的普通技术人员而言， 在不脱离本发明的精神和实 质的情况下， 可以做出各种变型和改进， 这些变型和改进也在本 发明的保护范围内。

Claims

权利要求书
1. 一种彩色滤光层， 其特征在于， 包括滤光膜和设置于所述 滤光膜的入光侧的光转换材料层。
2.如权利要求 1 所述的彩色滤光层， 其特征在于， 所述的光 转换材料层包括量子点和 /或上转换材料。
3.如权利要求 2 所述的彩色滤光层， 其特征在于， 所述的量 子点是由 CdTe、 CdSe掺杂 ZnS、 和 CdSe掺杂 ZnSe材料中的至 少一种制备的。
4.如权利要求 1 所述的彩色滤光层， 其特征在于， 所述的滤 光膜包括蓝色滤光膜， 设置在所述蓝色滤光膜入光侧的光转换材 料层包括上转换材料。
5.如权利要求 4 所述的彩色滤光层， 其特征在于， 所述的上 转换材料是由 NaCC TeC PreO NaYF4掺杂 Ho3+、稀土掺杂铒、 稀土掺杂 Yb、 和稀土掺杂 YF3材料中的至少一种制备的， 所述的 上转换材料的粒径范围为 20-40nm。
6.如权利要求 1-3中任一项所述的彩色滤光层， 其特征在于， 所述的滤光膜包括红色滤光膜， 设置在所述红色滤光膜入光侧的 光转换材料层包括量子点。
7.如权利要求 6 所述的彩色滤光层， 其特征在于， 所述的量 子点是由 CdTe材料制备的， 所述的 CdTe量子点的粒径范围为 2.5-4.0nm;
所述的量子点是由 CdSe掺杂 ZnS的材料制备的，所述的 CdSe 掺杂 ZnS的量子点的粒径范围为 2.5-6.3nm; 或者 所述的量子点是由 CdSe掺杂 ZnSe 的材料制备的， 所述的 CdSe掺杂 ZnSe的量子点的粒径范围为 2.5-6.3nm。
8.如权利要求 1-3中任一项所述的彩色滤光层， 其特征在于， 所述的滤光膜包括绿色滤光膜， 设置在所述绿色滤光膜入光侧的 光转换材料层包括量子点和 /或上转换材料。
9.如权利要求 8 所述的彩色滤光层， 其特征在于， 所述的量 子点是由 CdTe材料制备的， 所述的 CdTe量子点的粒径范围为 2.5-4.0nm;
所述的量子点是由 CdSe掺杂 ZnS的材料制备的，所述的 CdSe 掺杂 ZnS的量子点的粒径范围为 2.5-6.3nm; 或者
所述的量子点是由 CdSe掺杂 ZnSe 的材料制备的， 所述的 CdSe掺杂 ZnSe的量子点的粒径范围为 2.5-6.3nm; 以及
所述的上转换材料是由 NaYF4掺杂 Ho3+、 稀土掺杂铒、 稀土 掺杂 Yb、 和稀土掺杂 YF3材料中的至少一种制备的， 所述的上转 换材料的粒径范围为 20-40nm。
10.—种彩膜基板， 其特征在于， 所述的彩膜基板包括基底以 及多种颜色的、设置在所述基底表面上的不同位置的彩色滤光层， 其中至少部分彩色滤光层为如权利要求 1-9 中任一项所述的彩色 滤光层。
11.一种显示装置， 其特征在于， 所述的显示装置包括如权利 要求 10所述的彩膜基板。
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