WO2014206022A1 - 掩膜板以及应用其检测曝光缺陷的方法 - Google Patents
掩膜板以及应用其检测曝光缺陷的方法 Download PDFInfo
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- WO2014206022A1 WO2014206022A1 PCT/CN2013/089051 CN2013089051W WO2014206022A1 WO 2014206022 A1 WO2014206022 A1 WO 2014206022A1 CN 2013089051 W CN2013089051 W CN 2013089051W WO 2014206022 A1 WO2014206022 A1 WO 2014206022A1
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- Prior art keywords
- exposure
- detection
- mask pattern
- mask
- substrate
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- 230000007547 defect Effects 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000001514 detection method Methods 0.000 claims abstract description 158
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 238000011161 development Methods 0.000 claims description 21
- 230000000694 effects Effects 0.000 abstract description 6
- 230000001133 acceleration Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
Definitions
- the present invention relates to a mask and a method of detecting an exposure defect using the same. Background technique
- liquid crystal display devices With the increasing maturity of optoelectronic display technology, the application fields of display devices are becoming more and more extensive. Based on long life, high luminous efficiency, low radiation, and low power consumption, liquid crystal display devices have gradually replaced traditional radio tube display devices in order to develop the mainstream of display device products in recent years.
- the exposure machine is mainly used for exposing the substrate, and the purpose thereof is to transfer the mask pattern information of the mask to the substrate.
- the pattern of each structural unit required for the array substrate and the color filter substrate in the liquid crystal display device is formed by a subsequent process step such as development etching.
- the working process of the exposure machine can be described as follows: The exposure machine emits a beam of curved light (which can also be a beam of other forms); the initial velocity of the beam is 0, and the speed of the beam is scanned by the photosensitive material after acceleration by the acceleration zone. The substrate is then decelerated to a speed of 0 via the deceleration zone to complete the exposure process.
- the motion characteristics of the beam may affect the exposure effect.
- the motion characteristics of the beam include: the scanning speed of the beam, the starting position of the hook scanning, and the end position of the hook scanning.
- the number setting is unreasonable.
- the beam emitted by the exposure machine does not scan through the substrate in a uniform speed mode, but scans through the substrate in an acceleration or deceleration mode, and finally causes the exposure amount received by the substrate to differ from the expected exposure amount.
- Exposure defects However, when exposure defects occur, existing inspection techniques cannot grasp the cause of exposure defects. Summary of the invention
- Embodiments of the present invention provide a mask and a method for detecting exposure defects thereof, It is true to grasp the cause of exposure defects, improve the exposure effect, and increase the parameter of the substrate.
- an aspect of an embodiment of the present invention provides a mask, including a mask pattern, the mask further includes a plurality of detection mask patterns arranged along the scanning direction of the exposure machine.
- the detection mask pattern is disposed at an edge of the mask pattern, and the detection mask pattern is used to form a detection target on the substrate, and the detection target is used to reflect an exposure defect of the exposure machine.
- the detection mask pattern is provided with a plurality of detection marks, and the detection marks include any one or more of a digital mark, a pattern mark, and a letter mark.
- the shape of the detection mask pattern includes any one of a triangle, a circle, a square, and a diamond.
- the shape of the detection target formed on the substrate after the exposure of the detection mask pattern is not less than the smallest shape distinguishable by the exposure machine.
- each of the detection mask patterns is the same.
- the detection mask pattern is disposed on the same side of the mask pattern.
- Another aspect of the present invention provides a method of detecting an exposure defect, comprising:
- a developing process is performed on the substrate on which the exposure step is completed, and a detection target is obtained on the substrate; and an exposure defect existing in the exposure step is detected according to the detection mark.
- a mask for providing a method for detecting an exposure defect according to an embodiment of the present invention wherein a plurality of detection mask patterns arranged along the scanning direction of the exposure machine are disposed on the mask, and are exposed on the substrate by an exposure and development process.
- the detection mark is formed, and the exposure defect existing in the exposure step is confirmed according to the deformation condition of the detection target, the exposure defect is prevented from affecting the quality of the substrate, and the parameter index of the substrate is improved.
- FIG. 1 is a schematic diagram of exposure using a mask provided by an embodiment of the present invention
- FIG. 2 is a schematic diagram of a corresponding relationship between a mask pattern and a detection target according to an embodiment of the present invention
- FIG. 3 is a detection target according to an embodiment of the present invention
- FIG. 4 is a schematic diagram showing the corresponding relationship between the mask pattern and the detection target according to the embodiment of the present invention
- FIG. 5 is a schematic diagram showing the corresponding relationship between the mask pattern and the detection target according to the embodiment of the present invention
- FIG. 6 is a third schematic diagram of exposure using a mask provided by an embodiment of the present invention.
- Embodiments of the present invention provide a mask and a method for detecting exposure defects thereof, which can clearly grasp the cause of exposure defects, enhance the exposure effect, and increase the parameter index of the substrate.
- the embodiment of the present invention provides a mask, the mask includes a mask pattern, and the mask further includes a plurality of detection mask patterns arranged along the scanning direction of the exposure machine, and the detection mask
- the film pattern is disposed at an edge of the mask pattern, and the detection mask is used to form a detection mark on the substrate, and the detection mark is used to reflect an exposure defect of the exposure machine.
- the mask pattern information of the mask is transferred to the substrate through the exposure and development process to form a corresponding pattern. Therefore, the plurality of detection mask patterns on the mask plate of the embodiment of the present invention are similarly transferred to the substrate after the exposure and development process to form a plurality of detection targets, if a difference occurs between the detection target and the detection target mask pattern. Larger deformation indicates that the exposure machine has exposure defects.
- the detection mask patterns are arranged along the scanning direction of the exposure machine, the formed detection marks are also arranged in the scanning direction of the exposure machine, and thus can be used to grasp the exposure defects existing in the scanning direction of the exposure machine.
- the mask pattern is disposed at the edge of the mask pattern, and the purpose thereof is to prevent the detection of the mask pattern formed on the substrate by the detection target formed by the mask pattern. Further, when an exposure defect is detected, a person skilled in the art can formulate a corresponding solution according to the exposure defect to solve the influence of the defect on the substrate preparation.
- FIG. 1 is a schematic view showing exposure of a substrate by using a mask provided by an embodiment of the present invention.
- the exposure machine emits a beam of curved light 1 , and of course, the beam emitted by the exposure machine may also include other forms of light beams.
- the substrate 2 to be exposed is fixed in an exposure machine, and the substrate 2 is coated with a photosensitive material.
- the mask 3 provided in the embodiment of the present invention is disposed above the substrate 2.
- the mask 3 includes a mask pattern 31 and a plurality of detection mask patterns 32 arranged along the scanning direction of the exposure machine.
- the mask pattern 31 is used to form a structural unit pattern on the substrate, and the detection mask pattern 32 is used to form a detection mark on the substrate.
- the curved beam 1 moves in the scanning direction shown by the arrow in Fig. 1 and is scanned through the entire substrate 2.
- an exposure process to the substrate 2 is completed.
- the internal space of the exposure machine can be divided into three areas: the acceleration area (area A shown in Figure 1), the uniform speed area (Figure 1 The area B) and the deceleration zone (area C shown in Figure 1) are shown.
- the characteristics of the three regions can be described as follows: The speed of the beam emitted by the exposure machine in the acceleration zone is getting faster and faster, and the speed of the beam emitted by the exposure machine in the deceleration zone is slower and slower, and the exposure machine emits in the uniform velocity zone.
- the beam movement speed is a fixed speed.
- the parameter setting of the exposure machine and the position of the substrate should be adjusted so that the substrate is in the range of the uniform velocity range.
- the mask of the embodiment of the invention is provided with a plurality of detection mask patterns arranged along the scanning direction of the exposure machine and detecting the mask pattern setting.
- the mask 3 includes five detection mask patterns 32 arranged along the scanning direction of the exposure machine, and the detection mask pattern 32 is disposed at the edge of the mask pattern 31, and the shape of the detection mask pattern 32 is triangular, from up to The lower detection mask pattern 32a, the detection mask pattern 32b, the detection mask pattern 32c, the detection mask pattern 32d, and the detection mask pattern 32e, respectively.
- the substrate 2 is further subjected to a developing operation, and the detection of the mask pattern 32 by exposure development tends to form a corresponding pattern of the target mark on the substrate 2.
- the detection mark formed by the exposure and development of the detection mask pattern 32a is referred to as a'; the detection mark formed by the exposure of the detection mask pattern 32b is referred to as b'; the detection mask pattern 32c is exposed and developed.
- the detection mark formed is referred to as c'; the detection mark formed by the detection of the mask pattern 32d by exposure development is referred to as d'; the detection mark formed by the exposure of the detection mask pattern 32e is referred to as e'.
- the pattern of the detection mask in this scene is similar to the shape of the detection mark formed by exposure and development, and the difference is small. It should be noted that since the exposure is to transfer the mask pattern information on the mask onto the substrate, if the mask pattern is similar to the pattern formed on the substrate, the exposure amount is suitable. This shows that the exposure parameters used at this time and the position of the substrate can be sufficient, and there is no problem of exposure defects. For example: As shown in Fig. 1, the substrate 2 is located in the uniform velocity region B. Correspondingly, the mask 3 is also located in the uniform velocity region B, and the detection mask pattern 32 receives the light of a suitable exposure amount.
- the shape of the detection mask pattern 32a is similar to the shape of the detection mark a'
- the shape of the detection mask pattern 32b is similar to the shape of the detection mark b'
- the shape and detection of the detection mask pattern 32c are detected.
- the shape of the mark c' is relatively similar; and the shape of the detection mask pattern 32d is largely different from the shape of the detection mark d', and the shape of the detection mask pattern 32e is largely different from the shape of the detection mark e'.
- the mask 3 detects the detection mask pattern 32a, the detection mask pattern 32b, and the detection mark in the mask pattern 32.
- the mask pattern 32c is located in the uniform velocity region B, and the detection mask pattern 32d and the detection mask pattern 32e are located in the acceleration region A. Since the exposure machine beam is in an accelerated motion state in the acceleration region A, the speed of the acceleration motion state is small relative to the uniform motion state, so when the substrate 2 is scanned, the exposure time is too long, and the exposure amount and the design exposure received by the substrate 2 are exposed. The amount is different, which is ultimately reflected in the difference between the detection mask pattern and the detection mark formed by exposure and development.
- the person skilled in the art analyzes the cause of the occurrence of the exposure defect by comparing the difference between the shape of the mask pattern and the detection target. For example, as shown in Fig. 4, the exposure defect at this time is that a part of the substrate is located in the uniform velocity region, and a portion is located in the acceleration region.
- the technician then adjusts the technical characteristics of the exposure process according to the exposure defect, for example, the position of the substrate can be adjusted or the corresponding control parameters of the exposure machine can be adjusted to solve the exposure defect.
- the shape of the detection mask pattern 32c is similar to the shape of the detection mark c', and the shape of the detection mask pattern 32d is similar to the shape of the detection mark d', and the shape and detection of the detection mask pattern 32e are detected.
- the shape of the mark e' is relatively similar; and the shape of the detection mask pattern 32a is greatly different from the shape of the detection mark a', and the shape of the detection mask pattern 32b and the shape of the detection mark b' exist. Large difference. This shows that an abnormal exposure amount is received at the substrate position corresponding to the detection mask pattern 32a and the detection mask pattern 32b, and thus there is a problem that the exposure is abnormal. Analyze possible exposure defects in combination with how the exposure machine works. For example, as shown in FIG.
- the mask pattern 3, the detection mask pattern 32d, the detection mask pattern 32e, and the detection mask pattern 32e in the mask pattern 32 are located in the uniform velocity region B, and the mask is detected.
- the film pattern 32a and the detection mask pattern 32b are located in the deceleration zone region C. Since the exposure machine beam is in a decelerating motion state in the deceleration zone region C. Similarly, the speed of the decelerating motion state is small relative to the uniform motion state. Therefore, when scanning through the substrate 2, the exposure time is too long, and the exposure amount received by the substrate 2 is different from the design exposure amount, and finally reflected in the detection. The difference between the mask and the mark formed by exposure and development.
- the person skilled in the art analyzes the cause of the occurrence of the exposure defect by comparing the difference between the shape of the mask pattern and the detection target. For example, as shown in Fig. 5, the exposure defect at this time is that a part of the substrate is in the uniform velocity region, and a portion is located in the deceleration region.
- the technician then adjusts the technical characteristics of the exposure process according to the exposure defect, for example, the position of the substrate can be adjusted or the corresponding control parameters of the exposure machine can be adjusted to solve the exposure defect.
- a plurality of detection mask patterns arranged along the scanning direction of the exposure machine and disposed at the edge of the mask pattern are disposed on the mask provided by the embodiment of the present invention, and the detection mask is detected.
- the pattern is formed on the substrate by an exposure development process. According to the deformation condition of the detection target, the exposure defects existing in the exposure step can be grasped, and the exposure machine can be adjusted accordingly to overcome the influence of the exposure defect on the substrate quality.
- the detection mask pattern is provided with a plurality of detection marks, and the detection marks include any one or several of a digital mark, a pattern mark, and a letter mark. It can be understood that by setting the detection mark, it is more clear and accurate to judge the deformation between the test mark pattern and the detection mark mask, and to provide assistance for analyzing the exposure defect.
- the shape of the detection mask pattern may be in various forms, for example, the shape of the detection mask pattern includes any one of a triangle, a circle, a square, and a diamond.
- the shape of the detection target formed on the substrate after the exposure of the detection mask pattern is not less than the smallest shape distinguishable by the exposure machine.
- each of the detection mask patterns is the same.
- the detection mask pattern is disposed on the same side of the mask pattern.
- the embodiment of the invention provides a mask, wherein a plurality of detection mask patterns arranged along the scanning direction of the exposure machine and disposed at the edge of the mask pattern are disposed on the mask, and are formed on the substrate by an exposure and development process.
- the detection target is formed, and the exposure defect existing in the exposure step is confirmed according to the deformation condition of the detection target, thereby preventing the exposure defect from affecting the quality of the substrate, thereby improving the parameter index of the substrate.
- an embodiment of the present invention provides a method for detecting an exposure defect, comprising: 1) exposing a substrate using the above mask.
- the mask includes a mask pattern, and the mask further includes a plurality of detection mask patterns arranged along the scanning direction of the exposure machine and disposed at edges of the mask pattern.
- the detection mask pattern forms a detection mark on the substrate, and the detection mark can reflect the exposure defect of the exposure machine.
- the detection target is formed on the substrate by the exposure and development process, so that the deformation of the detection target reflects the exposure defect existing during the exposure process, and corresponding solutions can be further developed according to the exposure defect. The effect of this defect on substrate preparation.
- the method for detecting exposure defects provided by the embodiment of the present invention can be referred to as an implementation manner.
- the above embodiments are not described herein.
- a method for detecting an exposure defect provided by an embodiment of the present invention, wherein a plurality of detection mask patterns arranged along the scanning direction of the exposure machine and disposed at an edge of the mask pattern are disposed on the mask, and are exposed on the substrate by an exposure and development process.
- the detection target is formed, and the exposure defect existing in the exposure step is confirmed according to the deformation condition of the detection target, thereby preventing the exposure defect from affecting the quality of the substrate and improving the parameter index of the substrate.
Abstract
一种掩膜板以及应用其检测曝光缺陷的方法，其中，所述掩膜板（3）包括掩膜图形（31），掩膜板（3）还包括多个沿曝光机扫描方向排列设置的检测标掩膜图形（32），检测标掩膜图形（32）设置在掩膜图形（31）的边缘，检测标掩膜图形（32）用于在基板（2）上形成检测标，检测标用于反映曝光机的曝光缺陷。采用上述掩膜板（3），可明确掌握曝光缺陷的产生原因，从而提升曝光效果，增加基板（2）的参数指标。
Description
掩膜板以及应用其检测曝光缺陷的方法 技术领域 本发明涉及一种掩膜板以及应用其检测曝光缺陷的方法。 背景技术
随着光电显示技术的日益成熟， 显示装置的应用领域越来越广泛。 基于 寿命长、 光效高、 辐射低、 功耗低等特点， 液晶显示装置逐渐取代了传统射 线管显示装置而成为了近年来显示设备产品主流的发展方向。
作为液晶显示装置制备过程中的一种常用设备， 曝光机主要用于对基板 进行曝光，其目的是将掩膜板的掩膜图形信息转移到基板上。在曝光完成后， 再通过后续的显影刻蚀等工艺步骤形成液晶显示装置中阵列基板和彩膜基 板所需的各结构单元的图形。 曝光机的工作过程可描述为： 曝光机发出一束 弧形光束（也可为其他形态的光束）； 该光束初始速度为 0, 经加速区的加速 后该光束勾速扫描通过涂有感光物质的基板， 然后经减速区减速至速度 0以 完成曝光过程。其中，该光束的运动特征会对曝光效果产生影响，举例来说， 光束的运动特征包括： 光束的扫描速度、 勾速扫描起始位置以及勾速扫描终 止位置等等。 数设置的不合理， 例如曝光机发出的光束并没有以匀速模式扫描通过基板， 而是以加速或减速模式扫描通过了基板， 最终导致基板接收的曝光量与预想 的曝光量存在差异， 即出现了曝光缺陷。 然而当出现曝光缺陷问题时， 现有 检测技术无法掌握曝光缺陷的产生原因。 发明内容
本发明的实施例提供一种掩膜板以及应用其检测曝光缺陷的方法， 可明
确掌握曝光缺陷的产生原因， 提升曝光效果， 增加基板的参数指标。
为解决上述技术问题， 本发明的实施例的一方面提供一种掩膜板， 包括 掩膜图形， 所述掩膜板还包括多个沿曝光机扫描方向排列设置的检测标掩膜 图形， 所述检测标掩膜图形设置在掩膜图形的边缘， 所述检测标掩膜图形用 于在基板上形成检测标， 所述检测标用于反映曝光机的曝光缺陷。
进一步的， 所述检测标掩膜图形上设置有若干个检测标记， 所述检测标 记包括数字标记、 图案标记、 字母标记中的任意一种或几种。
进一步的， 所述检测标掩膜图形的形状包括三角形、 圓形、 正方形、 菱 形中的任意一种。
进一步的，所述检测标掩膜图形经曝光显影后在基板上形成的所述检测 标的形状不小于曝光机可分辨的最小形状。
进一步的， 每个所述检测标掩膜图形相同。
进一步的， 所述检测标掩膜图形设置于所述掩膜图形的同一侧。
本发明的另一方面提供一种检测曝光缺陷的方法， 包括：
使用上述的掩膜板对基板进行曝光；
对完成曝光步骤的所述基板进行显影工艺， 在所述基板上得到检测标； 根据所述检测标检测曝光步骤中存在的曝光缺陷。
本发明实施例提供的一种掩膜板以及应用其检测曝光缺陷的方法，通过 在掩膜板上设置多个沿曝光机扫描方向排列设置的检测标掩膜图形，通过曝 光显影工艺在基板上形成检测标，根据检测标的形变情况确认曝光步骤中存 在的曝光缺陷， 避免曝光缺陷影响基板的品质， 提高基板的参数指标。 附图说明 为了更清楚地说明本发明实施例或现有技术中的技术方案， 下面将对实 施例或现有技术描述中所需要使用的附图作筒单地介绍， 显而易见地， 下面 描述中的附图仅仅是本发明的一些实施例， 对于本领域普通技术人员来讲，
在不付出创造性劳动的前提下， 还可以根据这些附图获得其他的附图。 图 1为利用本发明实施例提供的掩膜板进行曝光的示意图之一； 图 2为本发明实施例检测标掩膜图形与检测标的对应关系示意图之一； 图 3为本发明实施例检测标掩膜图形与检测标的对应关系示意图之二； 图 4为利用本发明实施例提供的掩膜板进行曝光的示意图之二； 图 5为本发明实施例检测标掩膜图形与检测标的对应关系示意图之三； 图 6为利用本发明实施例提供的掩膜板进行曝光的示意图之三。 具体实施方式
本发明的实施例提供一种掩膜板以及应用其检测曝光缺陷的方法， 可明 确掌握曝光缺陷的产生原因， 提升曝光效果， 增加基板的参数指标。
以下描述中， 为了说明而不是为了限定， 提出了诸如特定系统结构、 接 口、 技术之类的具体细节， 以便透切理解本发明。 然而， 本领域的技术人员 情况中， 省略对众所周知的装置、 电路以及方法的详细说明， 以免不必要的 细节妨碍本发明的描述。
本发明实施例提供了一种掩膜板， 所述掩膜板包括掩膜图形， 所述掩膜 板还包括多个沿曝光机扫描方向排列设置的检测标掩膜图形， 所述检测标掩 膜图形设置在掩膜图形的边缘， 所述检测标掩膜用于在基板上形成检测标， 所述检测标用于反映曝光机的曝光缺陷。
需要说明的是，掩膜板的掩膜图形信息经过曝光显影过程转移到基板上 形成对应的图形。 因此， 本发明实施例掩膜板上的多个检测标掩膜图形同样 的在经过曝光显影过程后转移到基板上形成了多个检测标，若检测标与检测 标掩膜图形之间发生了较大形变， 则说明曝光机存在着曝光缺陷问题。 当检 测标掩膜图形沿曝光机扫描方向排列设置时， 形成的检测标也沿曝光机扫描 方向排列分布， 因此可用于掌握曝光机扫描方向上存在的曝光缺陷。 检测标
掩膜图形设置在掩膜图形的边缘， 其目的是为了防止检测标掩膜图形形成的 检测标污染基板上的掩膜图形。 进一步的， 当检测出曝光缺陷时， 本领域技 术人员可根据曝光缺陷制定对应解决措施以解决该缺陷对基板制备的影响。
为帮助本领域技术人员方便理解本发明实施例， 下面以利用本发明实施 例提供的掩膜板对基板进行曝光的曝光过程为例，对本发明实施例进行详细 描述。
如图 1所示， 图 1为利用本发明实施例提供的掩膜板对基板进行曝光的 示意图。 其中， 曝光机发出一束弧形光束 1 , 当然， 曝光机发出的光束也可 以包括其它形态的光束。 待曝光的基板 2固定在曝光机中， 基板 2上涂覆有 感光物质。 本发明实施例提供的掩膜板 3置于基板 2上方， 掩膜板 3中包括 掩膜图形 31以及多个沿曝光机扫描方向排列设置的检测标掩膜图形 32。 掩 膜图形 31用于形成基板上的结构单元图形，检测标掩膜图形 32用于形成基 板上的检测标。
进一步的， 假设弧形光束 1沿图 1箭头所示的扫描方向移动， 并扫描通 过整个基板 2。 当弧形光束 1将整个基板 2扫描完成时， 也就完成了对基板 2的一次曝光过程。 基于曝光机的工作原理， 根据曝光机所发出的光束运动 方式特征的不同， 可将曝光机内部空间划分为三个区域： 加速区（图 1 中所 示的区域 A ) 、 匀速区 （图 1 中所示的区域 B ) 、 减速区 （图 1 中所示的 区域 C ) 。 该三个区域的特征可描述为： 在加速区内曝光机发出的光束运动 速度越来越快， 在减速区内曝光机发出的光束运动速度越来越慢， 在匀速区 内曝光机发出的光束运动速度为一固定速度。 事实上， 为达到较优的曝光效 果， 使基板得到最适合的曝光量， 应当调整曝光机的参数设置以及基板所处 位置， 令基板处于匀速区范围内。
为了检测曝光机中是否存在曝光缺陷并掌握曝光缺陷的具体原因， 本发 明实施例的掩膜板中设置了多个沿曝光机扫描方向排列设置的检测标掩膜 图形且检测标掩膜图形设置在掩膜图形的边缘。 例如， 如图 1所示， 掩膜板
3中包括了五个沿曝光机扫描方向排列设置的检测标掩膜图形 32,检测标掩 膜图形 32设置在掩膜图形 31的边缘，检测标掩膜图形 32的形状为三角形， 由上到下分别为检测标掩膜图形 32a、 检测标掩膜图形 32b、 检测标掩膜图 形 32c、 检测标掩膜图形 32d、 检测标掩膜图形 32e。 当曝光步骤完成后， 继 续对基板 2进行显影操作，检测标掩膜图形 32通过曝光显影势必会在基板 2 形成相应的检测标的图形。 为了下文方便描述， 将检测标掩膜图形 32a曝光 显影形成的检测标称之为 a'; 检测标掩膜图形 32b曝光显影形成的检测标称 之为 b'; 检测标掩膜图形 32c曝光显影形成的检测标称之为 c'; 检测标掩膜 图形 32d曝光显影形成的检测标称之为 d'; 检测标掩膜图形 32e曝光显影形 成的检测标称之为 e'。
下面列举了曝光显影后三种可能出现的情况。
1、当检测标掩膜图形与通过曝光显影后形成的检测标的对应关系如图 2 所示时：
此情景中的检测标掩膜图形与通过曝光显影后形成的检测标形状较为 相似， 存在的差异度较小。 需要说明的是， 由于曝光是将掩膜板上的掩膜图 形信息转移到基板上， 因此若掩膜图形与基板上形成的图形较为相似时， 说 明曝光量是合适的。 由此说明此时所使用的曝光参数以及基板所在位置可满 足需要， 不存在曝光缺陷问题。 例如： 如图 1所示， 基板 2位于匀速区区域 B内。 与此对应的， 掩膜板 3也位于匀速区区域 B内， 检测标掩膜图形 32 接收到了合适曝光量的光线。
需要说明的是， 本领域技术人员可以理解的是， 比对检测标掩膜图形的 形状与检测标的形状的差异度可利用显微镜观察比对， 或者利用相关的软件 进行模拟， 在此不做赘述。 另外， 在本发明实施例中提及的检测标掩膜图形 的形状以及数量信息仅为举例， 事实上， 本领域技术人员可根据实际需要调 整改变相关形状以及数量的特征。
2、当检测标掩膜图形与通过曝光显影后形成的检测标的对应关系如图 3
所示时：
此情景中， 检测标掩膜图形 32a的形状与检测标 a'的形状较为相似， 检 测标掩膜图形 32b的形状与检测标 b'的形状较为相似， 检测标掩膜图形 32c 的形状与检测标 c'的形状较为相似； 而检测标掩膜图形 32d的形状与检测标 d'的形状存在较大差异， 检测标掩膜图形 32e的形状与检测标 e'的形状存在 较大差异。 由此说明在检测标掩膜图形 32d以及检测标掩膜图形 32e对应的 基板位置处接收到了异常的曝光量， 因此此处存在着曝光异常的问题。 结合 曝光机的工作方式， 分析可能存在的曝光缺陷， 例如： 如图 4所示， 掩膜板 3检测标掩膜图形 32中的检测标掩膜图形 32a、 检测标掩膜图形 32b、 检测 标掩膜图形 32c位于匀速区区域 B内， 而检测标掩膜图形 32d、 检测标掩膜 图形 32e位于加速区区域 A内。 由于曝光机光束在加速区区域 A处于加速 运动状态， 相对于匀速运动状态， 加速运动状态的速度较小， 因此扫描通过 基板 2时， 曝光时间过长， 基板 2接收到的曝光量与设计曝光量有所不同， 最终反映在了检测标掩膜图形与通过曝光显影后形成的检测标之间的差异 上。
可以理解的是， 本领域技术人员通过比对检测标掩膜图形的形状与检测 标的差异情况， 分析出了发生曝光缺陷的原因。 例如， 如图 4所示， 此时曝 光缺陷为基板一部分位于匀速区， 一部分位于加速区。 随后技术人员根据该 曝光缺陷调整曝光工艺的技术特征， 例如： 可调整基板所在位置或者调整曝 光机对应控制参数， 从而解决该曝光缺陷。
3、当检测标掩膜图形与通过曝光显影后形成的检测标的对应关系如图 5 所示时：
此情景中， 检测标掩膜图形 32c的形状与检测标 c'的形状较为相似， 检 测标掩膜图形 32d的形状与检测标 d'的形状较为相似， 检测标掩膜图形 32e 的形状与检测标 e'的形状较为相似； 而检测标掩膜图形 32a的形状与检测标 a'的形状存在较大差异， 检测标掩膜图形 32b的形状与检测标 b'的形状存在
较大差异。 由此说明在检测标掩膜图形 32a以及检测标掩膜图形 32b对应的 基板位置处接收到了异常的曝光量， 因此此处存在着曝光异常的问题。 结合 曝光机的工作方式， 分析可能存在的曝光缺陷。 例如： 如图 6所示， 掩膜板 3检测标掩膜图形 32中的检测标掩膜图形 32c、 检测标掩膜图形 32d、 检测 标掩膜图形 32e位于匀速区区域 B内， 检测标掩膜图形 32a、 检测标掩膜图 形 32b位于减速区区域 C内。 由于曝光机光束在减速区区域 C处于减速运 动状态。 同样的， 相对于匀速运动状态， 减速运动状态的速度是较小， 因此 扫描通过基板 2时， 曝光时间过长， 基板 2接收到的曝光量与设计曝光量有 所不同， 最终反映在了检测标掩膜与通过曝光显影后形成的检测标之间的差 异上。
同样的，本领域技术人员通过比对检测标掩膜图形的形状与检测标的差 异情况， 分析出了发生曝光缺陷的原因。 例如， 如图 5所示， 此时曝光缺陷 为基板一部分位于匀速区， 一部分位于减速区。 随后技术人员根据该曝光缺 陷调整曝光工艺的技术特征， 例如： 可调整基板所在位置或者调整曝光机对 应控制参数， 从而解决该曝光缺陷。
总结上述三种分析曝光缺陷的过程，可以发现本发明实施例提供的掩膜 板上设置多个沿曝光机扫描方向排列设置且设置在掩膜图形边缘的检测标 掩膜图形， 检测标掩膜图形经过曝光显影工艺在基板上会形成检测标。 根据 检测标的形变情况即可掌握曝光步骤中存在的曝光缺陷， 并据此进行调整曝 光机以克服曝光缺陷对基板品质的影响。
需要补充的一点是，在本实施例内仅给出了三种曝光过程中可能出现的 情况， 并由此分析出了是何种曝光缺陷导致了上述情况。 事实上， 还有存在 着许多可能的曝光异常情况， 而且反映在检测标的形变也各有不同， 在此本 文不做赘述。 但本领域技术人员可以理解的是， 通过在掩膜板上设置多个沿 曝光机扫描方向排列且设置在掩膜图形边缘的检测标掩膜图形，根据曝光显 影后在基板上形成检测标即可反映出曝光机存在的曝光缺陷问题。
进一步的， 所述检测标掩膜图形上设置有若干个检测标记， 所述检测标 记包括数字标记、 图案标记、字母标记中的任意一种或几种。可以理解的是， 通过设置检测标记， 可更加清楚准确方便判断测试检测标图形与检测标掩膜 之间形变情况， 为分析曝光缺陷提供帮助。
同样的， 检测标掩膜图形的形状可为多种形态， 例如： 检测标掩膜图形 的形状包括三角形、 圓形、 正方形、 菱形中的任意一种。
进一步的，所述检测标掩膜图形经曝光显影后在基板上形成的所述检测 标的形状不小于曝光机可分辨的最小形状。
进一步的， 每个所述检测标掩膜图形相同。
进一步的， 所述检测标掩膜图形设置于所述掩膜图形的同一侧。
本发明实施例提供一种掩膜板， 其中， 在掩膜板上设置多个沿曝光机扫 描方向排列设置且设置在掩膜图形边缘的检测标掩膜图形， 并通过曝光显影 工艺在基板上形成检测标，根据检测标的形变情况确认曝光步骤中存在的曝 光缺陷， 从而避免曝光缺陷影响基板的品质， 进而提高基板的参数指标。
另一方面， 本发明实施例还提供了一种检测曝光缺陷的方法， 包括： 1) 使用上述掩膜板对基板进行曝光。
具体的， 掩膜板包括掩膜图形， 掩膜板还包括多个沿曝光机扫描方向排 列设置且设置在掩膜图形边缘的检测标掩膜图形。
2)对完成曝光步骤的基板进行显影工艺， 在基板上得到检测标。
具体的， 完成曝光及显影工艺后， 检测标掩膜图形会在基板上形成检测 标， 检测标能够反映曝光机的曝光缺陷。
3 )根据检测标检测曝光步骤中存在的曝光缺陷。
具体的， 检测标是检测标掩膜图形通过曝光及显影工艺在基板上形成 的， 因此检测标若发生了形变则反映了曝光过程中存在的曝光缺陷， 根据曝 光缺陷可进一步制定对应解决措施以该缺陷对基板制备的影响。
其中， 本发明实施例提供的一种检测曝光缺陷的方法其实现方式可参考
上述实施例， 在此不做赘述。
本发明实施例提供的一种检测曝光缺陷的方法，在掩膜板上设置多个沿 曝光机扫描方向排列设置且设置在掩膜图形边缘的检测标掩膜图形，通过曝 光显影工艺在基板上形成检测标，根据检测标的形变情况确认曝光步骤中存 在的曝光缺陷， 从而避免曝光缺陷影响基板的品质， 提高基板的参数指标。
以上所述， 仅为本发明的具体实施方式， 但本发明的保护范围并不局限 于此， 任何熟悉本技术领域的技术人员在本发明揭露的技术范围内， 可轻易 想到变化或替换， 都应涵盖在本发明的保护范围之内。 因此， 本发明的保护 范围应以所述权利要求的保护范围为准。
Claims
1、 一种掩膜板， 包括掩膜图形， 其中， 所述掩膜板还包括多个沿曝光 机扫描方向排列设置的检测标掩膜图形， 所述检测标掩膜图形设置在掩膜图 形的边缘， 所述检测标掩膜图形用于在基板上形成检测标， 所述检测标用于 反映曝光机的曝光缺陷。
2、 根据权利要求 1所述的掩膜板， 其中， 所述检测标掩膜图形上设置 有若干个检测标记， 所述检测标记包括数字标记、 图案标记、 字母标记中的 任意一种或几种。
3、 根据权利要求 1或 2所述的掩膜板， 其中， 所述检测标掩膜图形的 形状包括三角形、 圓形、 正方形、 菱形中的任意一种。
4、 根据权利要求 1-3 中任一项所述的掩膜板， 其中， 所述检测标掩膜 图形经曝光显影后在基板上形成的所述检测标的形状不小于曝光机可分辨 的最小形状。
5、 根据权利要求 1-4 中任一项所述的掩膜板， 其中， 每个所述检测标 掩膜图形相同。
6、 根据权利要求 1-5 中任一项所述的掩膜板， 其中， 所述检测标掩膜 图形设置于所述掩膜图形的同一侧。
7、 一种检测曝光缺陷的方法， 包括：
使用权利要求 1-6中任一项所述的掩膜板对基板进行曝光；
对完成曝光步骤的所述基板进行显影工艺， 在所述基板上得到检测标；
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