WO2014198112A1 - 有机镀膜装置及镀膜方法 - Google Patents
有机镀膜装置及镀膜方法 Download PDFInfo
- Publication number
- WO2014198112A1 WO2014198112A1 PCT/CN2013/089606 CN2013089606W WO2014198112A1 WO 2014198112 A1 WO2014198112 A1 WO 2014198112A1 CN 2013089606 W CN2013089606 W CN 2013089606W WO 2014198112 A1 WO2014198112 A1 WO 2014198112A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- organic
- evaporation
- organic gas
- charged
- port
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000007888 film coating Substances 0.000 title abstract 5
- 238000009501 film coating Methods 0.000 title abstract 5
- 238000001704 evaporation Methods 0.000 claims abstract description 103
- 230000008020 evaporation Effects 0.000 claims abstract description 98
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 230000005684 electric field Effects 0.000 claims abstract description 27
- 239000011368 organic material Substances 0.000 claims description 44
- 239000007921 spray Substances 0.000 claims description 37
- 238000010438 heat treatment Methods 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 25
- 238000005507 spraying Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 28
- 238000000576 coating method Methods 0.000 description 13
- 238000007740 vapor deposition Methods 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008602 contraction Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000007665 sagging Methods 0.000 description 4
- 229920001621 AMOLED Polymers 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000004227 thermal cracking Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
- B05B5/001—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means incorporating means for heating or cooling, e.g. the material to be sprayed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
- B05B5/025—Discharge apparatus, e.g. electrostatic spray guns
- B05B5/0255—Discharge apparatus, e.g. electrostatic spray guns spraying and depositing by electrostatic forces only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
- B05B5/025—Discharge apparatus, e.g. electrostatic spray guns
- B05B5/03—Discharge apparatus, e.g. electrostatic spray guns characterised by the use of gas, e.g. electrostatically assisted pneumatic spraying
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
- B05B5/025—Discharge apparatus, e.g. electrostatic spray guns
- B05B5/053—Arrangements for supplying power, e.g. charging power
- B05B5/0533—Electrodes specially adapted therefor; Arrangements of electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
- B05B5/025—Discharge apparatus, e.g. electrostatic spray guns
- B05B5/057—Arrangements for discharging liquids or other fluent material without using a gun or nozzle
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/007—Processes for applying liquids or other fluent materials using an electrostatic field
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Definitions
- Embodiments of the present invention relate to the field of active matrix organic light emitting diode (LED) process, and more particularly to an organic device and an I3 ⁇ 4 method.
- LED active matrix organic light emitting diode
- OLED displays are gradually becoming more and more vectorized, especially large-size AMOLED (Active Matrix Organic Light Emitting Diode) displays are attracting attention, and EL (electroluminescent) organic electric fields are formed.
- Light-emitting (also called electroluminescence) components have also become the main research object.
- the conventional process for forming an organic thin film of an EL component light-emitting layer is vapor deposition film formation.
- the conventional vapor deposition method uses a single and dot-shaped vapor deposition source as a vapor deposition source, and there is no certain molecularity due to vaporization or sublimation.
- a device capable of coating a large-area substrate comprising: a container portion 24, an evaporation airflow adjusting portion 25, and an evaporation top plate 26, as shown in FIG. 1, in addition to the heating device. (Not shown in Figure 1).
- the evaporating airflow adjusting portion 25 has a porous layer structure between the container portion 24 and the vapor-deposited top plate 26, controls the adjustment and direction of the evaporating airflow, enlarges the distribution area of the airflow, and finally uniformly ejects the airflow onto the substrate to form a multi-point.
- the vapor deposition effect of the surface adjusts the size of the deposition area where the respective ejection openings overlap by adjusting the distribution and diameter of the ejection openings 261.
- the devices and processes in this solution cannot improve the accuracy of the organic film in the process of Mo, and there are still large organic materials. The problem of the fee, and the film formation speed has not been improved.
- the uniform organic gas is uniformly charged to obtain a charged organic gas; and the charged organic gas accelerates toward the substrate by an electric field and forms an organic film on the substrate.
- FIG. 1 is a schematic structural view of an organic material evaporation device in the prior art
- 2 is a schematic structural view of an organic device according to Embodiment 1 of the present invention
- FIG. 3 is a schematic cross-sectional view showing a method for depositing charged organic gas from a shower cavity to a surface of a substrate according to Embodiment 1 of the present invention
- An embodiment of the present invention provides an organic device.
- the structure is shown in FIG. 2, and includes: an evaporation device 91, an electron emission device 5, and a shower device 92.
- the evaporation apparatus includes an evaporation vessel 3 which is a linear evaporation vessel which generates a uniform organic gas from the evaporation vessel 3.
- the so-called linearity is that the evaporation container can generate linear organic gas in the container under the condition that the linear heating source provides thermal energy, and realizes linear evaporation of the organic material.
- the evaporation container 3 is generally made of stainless steel material, and contains organic material 2 inside.
- the evaporation vessel 3 is a linear evaporation vessel because the top of the evaporation vessel 3 has a slit-like evaporation port 15.
- a cooling pipe (not shown in FIG. 2) may be disposed around the evaporation vessel 3, and the inside of the cooling pipe is provided with a circulating refrigerant (such as a gas) so that the evaporation vessel 3 maintains a constant temperature and is reduced.
- a circulating refrigerant such as a gas
- the electron-emitting device 5 is horizontally disposed above the evaporation container 3, and the electron-emitting device 5 is a linear electron gun, or a plurality of small electron guns arranged uniformly and uniformly, and emits electrons uniformly outward.
- the electrons are attached to the organic gas, and the organic gas is sufficiently uniformly charged.
- the electron energy emitted by the electron gun should not be too large to avoid damaging the organic material.
- the type of electron gun can be a thermal electron emission tungsten electron gun or a cold field emission electron gun.
- the method of charging the organic gas is not limited to the above embodiment, and the organic gas may be positively charged.
- the electron-emitting device 5 uniformly charges the organic gas evaporated from the evaporation vessel 3 to obtain a charged organic gas Q.
- An organic film is formed on the substrate 13, and the shower apparatus includes, for example, an electrode plate 7, a shower chamber 8, and a shower port 11.
- the magnitude of the bias voltage supplied from the external power source to the electrode plate 7 can be adjusted in accordance with the film formation of the organic film.
- another electrode plate opposite to the electrode plate 7 may be included, and the other electrode plate may be directly grounded, may be disposed near the shower port 11, or may be disposed below the conveyor belt of the base 14.
- the external power source can provide a positive bias or a negative bias, which is determined by the positive or negative charge of the charged organic gas Q (i.e., the positive and negative of the electron e emitted by the electron-emitting device 7).
- the charged organic gas Q reaches the shower chamber 8, and the position and size of the shower chamber 8 are not particularly limited. However, in order to ensure that the organic gas can be sufficiently and uniformly charged, the shower chamber 8 needs to be kept at a certain distance from the electron gun 5 and the evaporation port 15.
- a gas passage 9 may be provided between the evaporation vessel 3 and the shower chamber 8, and the electrons e emitted from the electron emission port uniformly charge the organic gas evaporated from the evaporation port 15, and the charged organic gas Q passes through the gas passage 9.
- the evaporation port 15 is horizontally moved into the shower chamber 8.
- an insulating portion 6 may be provided between the electrode plate 7 and the shower chamber 8 to insulate between the electrode plate 7 and the shower chamber 8, and the material of the insulating portion 6 is not particularly limited.
- the organic gas Q receives a vertical downward electric field force, and under the action of the electric field force, the acceleration starts to accelerate downward, moves to the shower port 15 and ejects.
- Step S2 The uniform organic gas is uniformly charged to obtain a charged organic gas. This process is carried out at the evaporation port of the evaporation vessel.
- the electron-emitting device uniformly emits electrons (both positive and negative charges), and since the emission port of the electron-emitting device is above the evaporation port of the evaporation container, electrons uniformly emitted by the electron-emitting device are attached to the uniform organic gas, so that uniform The organic gas is uniformly charged to obtain a charged organic gas.
- the method provided by the present embodiment is to charge the organic material after being evaporated into a gas, and the advantage is that the charging is more uniform, so that the organic film formed by the charged organic gas sprayed on the substrate is more uniform.
- the electric field is realized by only one electrode plate, and the potential difference is formed by providing a positive or negative bias on the electrode plate, thereby saving space in the shower device and saving the manufacturing cost of the device;
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/241,723 US9425400B2 (en) | 2013-06-09 | 2013-12-16 | Apparatus and method for coating organic film |
US14/708,786 US9273390B2 (en) | 2013-06-09 | 2015-05-11 | Apparatus and method for coating organic film |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310231659.3 | 2013-06-09 | ||
CN201310231659.3A CN103305794B (zh) | 2013-06-09 | 2013-06-09 | 一种有机镀膜装置及方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/241,723 A-371-Of-International US9425400B2 (en) | 2013-06-09 | 2013-12-16 | Apparatus and method for coating organic film |
US14/708,786 Division US9273390B2 (en) | 2013-06-09 | 2015-05-11 | Apparatus and method for coating organic film |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014198112A1 true WO2014198112A1 (zh) | 2014-12-18 |
Family
ID=49131505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2013/089606 WO2014198112A1 (zh) | 2013-06-09 | 2013-12-16 | 有机镀膜装置及镀膜方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US9425400B2 (zh) |
CN (1) | CN103305794B (zh) |
WO (1) | WO2014198112A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103305794B (zh) | 2013-06-09 | 2016-03-02 | 京东方科技集团股份有限公司 | 一种有机镀膜装置及方法 |
CN104241551B (zh) | 2014-08-22 | 2017-02-15 | 京东方科技集团股份有限公司 | 一种有机电致发光显示面板、其制作方法及显示装置 |
CN106731917A (zh) * | 2016-11-29 | 2017-05-31 | 广东思泉新材料股份有限公司 | 一种材料混合方法和装置 |
DE102017106985A1 (de) * | 2017-03-31 | 2018-10-04 | Technische Hochschule Wildau (Fh) | Vorrichtung zur elektronenunterstützten Beschichtung von Substraten sowie ein entsprechendes Verfahren |
US10903427B2 (en) | 2017-05-01 | 2021-01-26 | Emagin Corporation | Apparatus and method for direct patterning of an organic material using an electrostatic mask |
CN109546008B (zh) * | 2017-09-22 | 2020-11-06 | 清华大学 | 有机发光二极管的制备方法 |
CN108165990A (zh) * | 2018-01-22 | 2018-06-15 | 京东方科技集团股份有限公司 | 量子点镀膜方法及系统 |
US10541386B2 (en) | 2018-01-30 | 2020-01-21 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Evaporation deposition equipment and evaporation deposition method |
CN108300962A (zh) * | 2018-01-30 | 2018-07-20 | 武汉华星光电半导体显示技术有限公司 | 蒸镀设备及蒸镀方法 |
CN108365117A (zh) * | 2018-01-31 | 2018-08-03 | 昆山国显光电有限公司 | 封装结构与封装方法及封装结构制备装置 |
KR20200045600A (ko) | 2018-10-22 | 2020-05-06 | 삼성디스플레이 주식회사 | 증착 장치 및 이를 이용한 증착 방법 |
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CN1369921A (zh) * | 2001-03-07 | 2002-09-18 | 中国科学院长春光学精密机械与物理研究所 | 改善有机蒸发镀膜成膜性能的方法 |
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JP2008202100A (ja) * | 2007-02-21 | 2008-09-04 | Sony Corp | 真空蒸着方法、真空蒸着装置、表示装置の製造方法および表示装置 |
JP2013041686A (ja) * | 2011-08-11 | 2013-02-28 | V Technology Co Ltd | 真空蒸着方法、真空蒸着装置及び有機el表示装置の製造方法 |
CN103305794A (zh) * | 2013-06-09 | 2013-09-18 | 京东方科技集团股份有限公司 | 一种有机镀膜装置及方法 |
CN203270020U (zh) * | 2013-06-09 | 2013-11-06 | 京东方科技集团股份有限公司 | 一种有机镀膜装置 |
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CN101803459A (zh) * | 2007-09-10 | 2010-08-11 | 株式会社爱发科 | 蒸镀装置 |
US20100247747A1 (en) * | 2009-03-27 | 2010-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Film Deposition Apparatus, Method for Depositing Film, and Method for Manufacturing Lighting Device |
CN101906609B (zh) | 2009-06-02 | 2014-01-22 | 鸿富锦精密工业(深圳)有限公司 | 热蒸镀装置 |
KR20180011862A (ko) | 2010-09-02 | 2018-02-02 | 메르크 파텐트 게엠베하 | 전자 디바이스용 중간층 |
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CN1369921A (zh) * | 2001-03-07 | 2002-09-18 | 中国科学院长春光学精密机械与物理研究所 | 改善有机蒸发镀膜成膜性能的方法 |
CN1605652A (zh) * | 2004-09-09 | 2005-04-13 | 复旦大学 | 一种利用强电场的真空热蒸镀成膜方法 |
JP2008202100A (ja) * | 2007-02-21 | 2008-09-04 | Sony Corp | 真空蒸着方法、真空蒸着装置、表示装置の製造方法および表示装置 |
JP2013041686A (ja) * | 2011-08-11 | 2013-02-28 | V Technology Co Ltd | 真空蒸着方法、真空蒸着装置及び有機el表示装置の製造方法 |
CN103305794A (zh) * | 2013-06-09 | 2013-09-18 | 京东方科技集团股份有限公司 | 一种有机镀膜装置及方法 |
CN203270020U (zh) * | 2013-06-09 | 2013-11-06 | 京东方科技集团股份有限公司 | 一种有机镀膜装置 |
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CN103305794A (zh) | 2013-09-18 |
US9273390B2 (en) | 2016-03-01 |
US20150162535A1 (en) | 2015-06-11 |
US9425400B2 (en) | 2016-08-23 |
CN103305794B (zh) | 2016-03-02 |
US20150240345A1 (en) | 2015-08-27 |
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