WO2014183943A1 - Couche de blocage à base de sio2 pour processus de revêtement et de diffusion à haute température - Google Patents
Couche de blocage à base de sio2 pour processus de revêtement et de diffusion à haute température Download PDFInfo
- Publication number
- WO2014183943A1 WO2014183943A1 PCT/EP2014/057584 EP2014057584W WO2014183943A1 WO 2014183943 A1 WO2014183943 A1 WO 2014183943A1 EP 2014057584 W EP2014057584 W EP 2014057584W WO 2014183943 A1 WO2014183943 A1 WO 2014183943A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- quartz glass
- silicon
- silicon dioxide
- layer
- base body
- Prior art date
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 50
- 230000004888 barrier function Effects 0.000 title claims description 6
- 238000009792 diffusion process Methods 0.000 title claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 261
- 238000000034 method Methods 0.000 claims abstract description 136
- 230000008569 process Effects 0.000 claims abstract description 117
- 239000007789 gas Substances 0.000 claims abstract description 66
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 65
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 65
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 58
- 239000010703 silicon Substances 0.000 claims abstract description 58
- 239000011248 coating agent Substances 0.000 claims abstract description 50
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 239000000919 ceramic Substances 0.000 claims abstract description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 22
- 239000010439 graphite Substances 0.000 claims abstract description 22
- 239000011521 glass Substances 0.000 claims abstract description 20
- 230000007797 corrosion Effects 0.000 claims abstract description 10
- 238000005260 corrosion Methods 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 54
- 229910052796 boron Inorganic materials 0.000 claims description 23
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- 239000002019 doping agent Substances 0.000 claims description 6
- 239000002210 silicon-based material Substances 0.000 claims description 5
- 238000007751 thermal spraying Methods 0.000 claims description 5
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 4
- 239000005052 trichlorosilane Substances 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 abstract description 2
- 239000005350 fused silica glass Substances 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 76
- 238000005336 cracking Methods 0.000 description 11
- 239000002245 particle Substances 0.000 description 10
- 239000002002 slurry Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000005755 formation reaction Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000011148 porous material Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- -1 for example Chemical class 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910000085 borane Inorganic materials 0.000 description 2
- 150000001639 boron compounds Chemical class 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 239000001273 butane Substances 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 239000008199 coating composition Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- 238000004017 vitrification Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000010285 flame spraying Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000002737 fuel gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000002459 porosimetry Methods 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004901 spalling Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Glass Compositions (AREA)
- Chemical Vapour Deposition (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
L'invention concerne un dispositif destiné à modifier des semi-conducteurs au moyen de gaz de processus corrosifs ou à revêtir des objets en silicium, en céramique, en verre ou en graphite, ou à produire du silicium. Ledit dispositif comprend des composants dont le corps de base est en silice et qui sont revêtus d'une couche de dioxyde de silicium dont la porosité est supérieure à celle de la silice. En outre, l'invention concerne un procédé de dopage et de revêtement de semi-conducteurs, de revêtement d'objets en verre, en silicium, en céramique, ou en graphite, ainsi que de production de silicium, dans lequel on utilise le dispositif de l'invention. En outre, l'invention concerne l'utilisation d'une couche de dioxyde de silicium amorphe sur un corps de base en silice afin de réduire la corrosion par des gaz de processus.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102013208799.3A DE102013208799A1 (de) | 2013-05-14 | 2013-05-14 | SiO2-basierte Sperrschicht für Hochtemperatur-Diffusions- und Beschichtungsprozesse |
| DE102013208799.3 | 2013-05-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2014183943A1 true WO2014183943A1 (fr) | 2014-11-20 |
Family
ID=50489101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2014/057584 WO2014183943A1 (fr) | 2013-05-14 | 2014-04-15 | Couche de blocage à base de sio2 pour processus de revêtement et de diffusion à haute température |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE102013208799A1 (fr) |
| TW (1) | TW201504178A (fr) |
| WO (1) | WO2014183943A1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113684468A (zh) * | 2021-07-14 | 2021-11-23 | 深圳市拉普拉斯能源技术有限公司 | 一种石英件保护层及其制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3099523A (en) * | 1960-12-17 | 1963-07-30 | Siemens Ag | Method of producing hyperpure silicon, silicon carbide and germanium |
| EP1352986A2 (fr) * | 2002-04-04 | 2003-10-15 | Tosoh Corporation | Pièces de verre de quartz obtenues par pulvérisation thermique et leur méthode de fabrication |
| US20120083105A1 (en) * | 2009-04-06 | 2012-04-05 | Semco Engineering Sa | Method for boron doping silicon wafers |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1497193A (en) * | 1974-12-20 | 1978-01-05 | Owens Illinois Inc | Boron doping of semiconductors |
| DE3441056A1 (de) | 1984-11-09 | 1986-05-22 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur verminderung des verschleisses von bei der gasphasenabscheidung von silizium verwendeten quarzteilen |
| US5443686A (en) * | 1992-01-15 | 1995-08-22 | International Business Machines Corporation Inc. | Plasma CVD apparatus and processes |
| US5540782A (en) | 1992-10-15 | 1996-07-30 | Tokyo Electron Kabushiki Kaisha | Heat treating apparatus having heat transmission-preventing plates |
| DE4429825C1 (de) | 1994-08-23 | 1995-11-09 | Heraeus Quarzglas | Beschichtetes Bauteil aus Quarzglas |
| FR2737488B1 (fr) * | 1995-07-31 | 1997-09-19 | Vesuvius France Sa | Materiau refractaire de silice vitreuse a faible corrosion par les metaux fondus, piece et procede de fabrication |
| DE19719133C2 (de) | 1997-05-07 | 1999-09-02 | Heraeus Quarzglas | Glocke aus Quarzglas und Verfahren für ihre Herstellung |
| DE102005036746A1 (de) * | 2005-08-04 | 2007-02-08 | Wacker Chemie Ag | SiO2-Formkörper aus zwei Schichten, Verfahren zu ihrer Herstellung und Verwendung |
| DE102007030698B4 (de) | 2007-06-30 | 2009-06-10 | Heraeus Quarzglas Gmbh & Co. Kg | Verfahren zur Herstellung eines Verbundkörpers aus einem Basiskörper aus opakem Quarzglas und einer dichten Versiegelungsschicht sowie Verwendung des Verbundkörpers |
| DE102009049032B3 (de) * | 2009-10-10 | 2011-03-24 | Heraeus Quarzglas Gmbh & Co. Kg | Verfahren zur Herstellung eines beschichteten Bauteils aus Quarzglas |
-
2013
- 2013-05-14 DE DE102013208799.3A patent/DE102013208799A1/de not_active Ceased
-
2014
- 2014-04-15 WO PCT/EP2014/057584 patent/WO2014183943A1/fr active Application Filing
- 2014-05-07 TW TW103116306A patent/TW201504178A/zh unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3099523A (en) * | 1960-12-17 | 1963-07-30 | Siemens Ag | Method of producing hyperpure silicon, silicon carbide and germanium |
| EP1352986A2 (fr) * | 2002-04-04 | 2003-10-15 | Tosoh Corporation | Pièces de verre de quartz obtenues par pulvérisation thermique et leur méthode de fabrication |
| US20120083105A1 (en) * | 2009-04-06 | 2012-04-05 | Semco Engineering Sa | Method for boron doping silicon wafers |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102013208799A1 (de) | 2014-11-20 |
| TW201504178A (zh) | 2015-02-01 |
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