WO2014173670A1 - Beleuchtungsvorrichtung mit optoelektronischem bauelement - Google Patents
Beleuchtungsvorrichtung mit optoelektronischem bauelement Download PDFInfo
- Publication number
- WO2014173670A1 WO2014173670A1 PCT/EP2014/056925 EP2014056925W WO2014173670A1 WO 2014173670 A1 WO2014173670 A1 WO 2014173670A1 EP 2014056925 W EP2014056925 W EP 2014056925W WO 2014173670 A1 WO2014173670 A1 WO 2014173670A1
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- WIPO (PCT)
- Prior art keywords
- component
- lighting device
- contacting
- underside
- enveloping body
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
Definitions
- the present invention relates to avacanciessvorrlehtung with an optoelectronic device and a method for producing the same.
- illumination device refers in the context of this disclosure is directed to a packaged optoelectronic construction ⁇ element, that is a module that can be mounted, for example, together with other components on a circuit board.
- the optoelectronic component is a light emitting device from approximately a semiconducting Materi al (also abbreviated as "LED” in the context of this disclosure), for example, an inorganic or generally also organic light emitting diode.
- a LED is from the prior art known to grip the component with, for example, a sub ⁇ pressure tool, and arrange on a mostly previously encapsulated with molding compound conduction path (pre-molded lead frame). After the device is electrically connected to the leadframe via bonding wires, it is surrounded with silicone; The silicone fills a limited laterally from the molding compound cavity in which the construction element was placed at the beginning.
- the present invention is based on the technical object of specifying a housing of an optoelectronic component which is advantageous over the prior art and a corresponding method of the housing. Presentation of the invention
- this object solves aumpssvorrich ⁇ tion with an optoelectronic device having a designed as a light exit surface top and one of the electrical contacting of the device serving connection element on the opposite bottom, with an enveloping body which surrounds the component at least partially, but the underside of the device leaves free, and with ei ⁇ nem with the connection element electrically conductively connected, planar first contact element which extends below the component and protrudes laterally beyond the component in this underside Warre-, the ers ⁇ te contacting element is plated directly on the connection element and a surface of the first contacting element which extends on the underside of the component and faces away from the component as a free contact surface which is designed to connect the illumination device at a macroscopic level is provided.
- a lighting device is initially characterized by a comparatively simple construction, because the contacting element on the one hand represents the interface to the macroscopic, for example to a printed circuit board, and on the other hand, the component contacted directly electrically conductive.
- the prior art therefore does not have the one hand, a bonding wire for contacting the component and at ⁇ other hand, a lead frame are provided for solder bonding with, for example, a printed circuit board.
- connection element which is part of the component; in the connection element, for example, it may be a previously already in the course of component manufacturing (im In the case of the prior art packaging method described above, the LED metallization applied in the context of the front-end processing is then contacted with a bonding wire.
- the LED metallization may, for example, have a thickness of at least 250 nm, 500 nm, 700 nm, 800 nm or 900 nm; Possible upper limits of the minimum thickness, independently for example, 10 .mu.m, 5 ym, 3 ym, 2 ym Bezie ⁇ hung, 1.5 ym.
- Possible materials of the LED metallization are, for example (in each case as layer sequence) titanium / platinum / gold (TiPtAu), titanium / palladium / gold (TiPdAu), titanium / nickel / palladium / gold (TiNiPdAu) or gold / tin (AuSn).
- connection element is generally a region provided for electrical contacting of the component, from which, for example, vias can be guided in the direction of the epi layers.
- the contacting of the at closing element of the device preferably an LED metallization
- the contacting is produced only in the course of Häusung, so there is no previously separately Herge ⁇ notified contacting scheduled , for example Improve the electrical contact with the LED metallization and reduce the logistical effort.
- the contacting element can be deposited, for example, from a bath, de-energized and / or electro-galvanic, or applied by sputtering, vapor deposition, spraying or flame spraying, or else melted.
- the contacting can, for example, a thickness of at least 1 ym, 5 ym, 10 ym, 20 and 30 ym ym ha ⁇ ben; possible upper limits on the minimum thickness independently for example, 1500 .mu.m, 1000 .mu.m, 800 .mu.m, 500 .mu.m be ⁇ relationship, 100 ym.
- the contacting element is at least one with respect to the height direction middle portion in one piece; "Integral" means the extent free of either due to an interruption of the Aufmetall matters and / or by changing the metalization metal resulting material boundaries.
- This one-piece relates to at least one mitt ⁇ sized region extending for example over at least 60%, 70% and 80% of the Thickness of the contacting element can extend.
- soldering may mean, for example, soldering, diffusion soldering, sintering or gluing;
- a corresponding connection to the macroscopic can also be made by means of a bonding paste or by direct application, for example by forming an alloy or a direct contact with a contact area on a circuit board / carrier plate, which is provided from the same material as the contacting element.
- the term "free contact area” generally does not exclude, for example, the presence of a package for protection during transport or storage, for example a film covering the contact area.
- connection element and contacting element as well as the Kon ⁇ tact surface on the same side, and below it.
- the contacting element does not extend "around the device" to the top of the device, however, the contacting element carries the wiring somewhat laterally away from the device.
- the contacting element extends (and therefore the contact area) alone underside of Bauele ⁇ ments, the contacting therefore dominates the device only in the lateral direction; an (imaginary) plane in which the underside of the component is located does not intersect the contacting element in this case.
- the half-space above the bottom of the building ⁇ elements contacting element-free; thetechnischtechniksele- element is so far particularly simple and can be aufmetallograph in ⁇ example, "in one piece".
- indications such as “upper side” / “lower side” or “upper side” / “lower side” refer to the vertical axis in respect of which the thickness, for example of the component, an LED metallization or the contacting element is specified.
- the terms “below” and “above” also refer to the height direction, but additionally concretize an alignment in the height direction, thus excluding an offset in the lateral direction.
- the height direction may coincide after assembly of the packaged device, for example, with a normal to the corresponding carrier plate / circuit board; a main propagation direction downstream of the light exit surface
- Light which is formed as the center of gravity direction of the power-weighted propagation directions, is usually in the height direction.
- the width and the depth are indicated; the lateral direction is perpendicular to the nrich ⁇ tion.
- the Kon ⁇ takt istselement projects laterally beyond the component; an (imaginary) plane, which is defined by a corresponding side surface of the component, thus cuts the Kontak ⁇ t michselement.
- said "over the component project laterally” means that the component and the Maisie- approximately body (in particular its contact surface) overlap in a pro jection ⁇ in the vertical direction to a height direction senkrech- to th surface partially.
- the contacting element projecting beyond the component can be advantageous, for example, insofar as the components have a rather small width and depth and, as a result, they also tend to decrease further; by the contacting and DA with the contacting provided laterally across the device, projecting, the wiring is in a sense "spread", so that a contact on makrosko ⁇ European level is possible.
- the contacting can play to gene in ⁇ in this order with increasing preference min ⁇ least 5%, 10% and 15% of the taken in the same Rich ⁇ processing width of the device about this Stammra- in the lateral direction; possible upper limits independent of the lower limit may, for example, be 100%, 80%, 60% and 40%, respectively.
- the term "contact surface ⁇ " refers without further specification in the context of this disclosure always
- a second contacting element is provided and arranged below ⁇ side of the component; and the second PLEASE CONTACT ⁇ approximately element is metallized onto the component and projects laterally beyond, in a direction opposite to the first contacting side of the device.
- the first and the second contact are in ⁇ be vorzugter embodiment taken in a lateral direction minimum distance of at least 50 .mu.m, in that order follow increasingly preferably at least 100 .mu.m, 150 .mu.m, 180 .mu.m Bezie ⁇ hung; can boundaries independent of this lower limit, upper ⁇ for example, at 3 mm, are 2 mm or 1 mm.
- more contacting elements may be provided, as in the case of a component with a plurality of components even ⁇ course next to that provided for in a preferred embodiment the first and second contacting element;
- a total of three, four, five, six, seven or eight or even more Kunststoffie ⁇ tion elements may be provided.
- the contacting elements can be divided, for example, on two opposite sides of the component, in each case in pairs lying opposite each other.
- connecting elements are provided solely on the underside of the component;
- at least two connecting elements are provided on the underside, because the designed as a light exit surface top of the device is connection element-free and the electrical contacting of the device requires at least two Anschlußele ⁇ elements.
- a corresponding, only niesei ⁇ term arrangement corresponds to the idea of simple construction, because no complex wiring around the device around is necessary, but with a number of Anschlußele ⁇ elements corresponding number of contacting the terminals can be led away down and to the side.
- a light is at the bottom of the device arranged reflecting reflective layer, preferably in such a way that a terminal ⁇ element-free area of the device is fully thereof ⁇ be revealed.
- the reflection layer may be provided for example at ⁇ organic or organic base;
- a metal may also be provided for reflection, for example aluminum or silver, which may be applied as a coating and / or embedded in a matrix material.
- Matrix material filled with reflective particles Alien are generally preferred, so for example Titandi ⁇ oxide particles in matrix material, such as in a silicone material.
- the reflection layer can also be, for example, a reflector film, for example a microcellular PET film (MC-PET); the reflector film may be due to the ver ⁇ applied base material and / or due to a surface structuring, introduced for example into the surface cavities may be reflective.
- MC-PET microcellular PET film
- the reflective layer may, for example, applied by physi ⁇ shear and / or chemical deposition advertising to, such as by sputtering, printing, knife coating, dispensing, graphically patterning, abrasive patterning lithography ( ⁇ - sandblasting), Jetten, stamping, spraying (applied to previously Adhesive); a direct application is mög ⁇ Lich, wherein the connection as a result of kinetic see acceleration of the particles is obtained.
- the reflection layer serves to reflect light emitted downwards so that it is reflected upwards and exits (in part) through the light exit surface at the top side of the component.
- a component namely an LED with a for the
- LED light at least partially transmissive substrate vorgese ⁇ hen, for example with a sapphire substrate.
- the component itself can actually be designed for a light emission at the "bottom side" provided with the connection elements, which constitutes the top side in the case of a conventional mounting.
- the reflective layer is a Light exit at the bottom (which is provided in conventional housing as the top and accordingly light exit surface) prevents, so that the light exits at the top (in housing according to the invention).
- a reflection layer be provided already in the course of device fabrication, so in the context of a front-end process, or may generally find a component Ver ⁇ application whose light exit surface is already arranged opposite to the connection elements.
- the connecting elements may also themselves have a reflective effect, which may also be favored by the choice of a suitable material;
- chromium, titanium and / or titanium tungsten may also be preferred.
- the terminal member need not be provided on its GESAM ⁇ te thickness of, for example silver, but only a thin, first-deposited layer may be provided in the comparatively high-priced silver material.
- a connection element in conjunction with a connection element
- Silver or aluminum may also be a titanium dioxide, silicon dioxide and / or to the envelope body and / or component (in an area not intended for electrical contacting) Be provided alumina layer with respect to the order of the on ⁇ brin narrowing below the connection element ( ⁇ be subjected to the orientation of the housing above it).
- a reflection layer (particularly preferably also) is provided in a region next to the component, on the underside of the enveloping body.
- the reflection ⁇ ons Mrs can reflect obliquely upwards after obliquely down light emitted and at least partially usable ma ⁇ chen.
- an electrically insulating insulating layer is provided and arranged relative to the height direction between the connecting element and the Kontak- tismeselement; this arrangement is given in regions, that is, in a proportion of the surface of the connecting element, for example in an area fraction of at least 5%, 10% or 15%; possible upper limits can be 40%, 30% and 20%, respectively.
- a smallest lateral extension of the connecting element about min ⁇ least 30 ym, be 40 ym and 50 ym; of diesel sen lower limits independent upper limit can vary depending upon the size of the device, for example, at 1000 ym, 800 ym or 600 ym, for instance in the case of a construction ⁇ elements with an edge length of one millimeter.
- the insulating layer thus covers the connection element in part, preferably a peripheral region of the terminal ⁇ elements, particularly preferably circumferentially. Viewing from below onto the component, the insulation layer then leaves free ei ⁇ NEN center region of the connection element; the insulation ⁇ layer masks the terminal and puts so for Aufmetall read the contacting the Maisbe ⁇ rich of connection element and contacting tightly. With the insulation element masking the connection element, which preferably has a central region of the connection element For example, it is possible to achieve a certain insensitivity to a lateral offset during metal-plating, which may offer advantages in mass production, for example.
- an insulating layer is provided below a lateral contact region of the component and the enveloping body, in which a side surface of the component adjoins the enveloping body (particularly preferably in conjunction with the "masking" arrangement described above) overlap provided both in the direction of the device as well as the envelope body; the overlap may example ⁇ instance at least 20 .mu.m, 30 .mu.m, 50 ym or 100 ym be and independently of the lower limit examples game, a maximum of 500 .mu.m, 400 .mu.m and 300 .mu.m.
- the contact area between the enveloping body and component preferably around the entire Bauele ⁇ ment circumferentially covering insulating layer can help prevent such a formation of an electrical short circuit along a side surface to the epi-layers of the device, such as the Au metallizing the contacting element.
- the insulating layer can also offer advantages in the case of moisture exposure, for example in the case of delamination between the component and the enveloping body and also help to avoid electrical malfunctions.
- a connecting element-free area of the underside of the component with an insulation ⁇ layer is provided, particularly preferably provided in conjunction with the above-described "masking" arrangement and the contact area concealment.
- the development of an electrical short circuit between these can also be prevented Insulation layer, for example, in turn the back (relative to the housing bottom) with an additional
- Be provided layer such as in the case of a transmissive insulation layer with, for example, locally applied reflective layer.
- insulating layer material are in principle all dielectrics in question which are known from the fron end-production (wafer-level dielectrics) and photolithographically textured gray are ⁇ bar, as imide, WPR (for example, JSR Micro), benzocyclobutene (BCB), or epoxy; It can also be provided an insulating paint, for example, a solder mask.
- WPR for example, JSR Micro
- BCB benzocyclobutene
- epoxy epoxy
- insulating paint for example, a solder mask.
- the application can also be done, for example, with a printing technique, for example in a so-called inkjet process or with stencils or screen printing.
- the insulation layer material may be about even Silizi ⁇ dioxide (S1O 2), silicon nitride (SiN) or SiO x N y be.
- the insulating layer can be provided, for example, from a matrix material, in which reflection particles , for example, can also be embedded. In that regard, all arrangement possibilities described above for the reflection layer are expressly also to be disclosed for the electrically insulating reflection layer.
- a matrix material may further also that extent be far advantageous as in a preferred embodiment an additional whose heat conduction enhancing material can be embedded, for example fused silica or
- the reflection / insulation layer can thus also improve the thermal household of the housing; in the case of a reflection layer should be the heat ⁇ line-improving material in the spectral region of from the component or a conversion material emitted light show only low absorption, so as not to affect the reflection properties.
- the enveloping body covers the upper side of the component and more preferably all side surfaces of the component, ie in the case of a conventional rectangular component geometry all four soflä ⁇ Chen.
- the sheath body envelops the device by the Untersei ⁇ te apart thus preferably completely, so that the construction ⁇ element is protected to some extent against environmental influences, for example, before a humidity exposure.
- the conversion material at a ⁇ least partial conversion of the emitted light from the device to light of longer wavelength is used.
- the light emitted by the packaged component light can be a superposition of the output from the component and the conversion material light, which is also referred to as "partial conversion", on the other hand, in the case of a so-called “full conversion” downstream of the conversion material alone by said Kon ⁇ version material emitted, longer wavelength light present.
- the conversion material is also called “fluorescent" referred ⁇ net.
- the enveloping body may, for example, be applied in a printing process or by doctoring, by spraying or pouring or dispensing, or may be spun on. Furthermore, the component can, for example, also be immersed or pressed into the enveloping body. Particularly preferably, the enveloping body is either applied in a casting process, in particular in an injection molding process, or provided as a film and deep-drawn or laminated, for example. In this case, a matrix material will then continue as an envelope ter preferably provided, for example silicone, in the case of casting, in which, as above, be written ⁇ , conversion material is particularly preferredGarbet ⁇ tet. In general, the enveloping body is integrally formed in a preferred embodiment.
- the invention also relates to a method for manufacturing a packaged in the manner described above component, wherein the sheath body is so applied to the component, that the underside of the device remains free to the terminal ⁇ element.
- the component can initially also be completely enveloped by the material of the enveloping body and the underside of the component can subsequently be exposed; preferably the Untersei ⁇ te of the device is, however, already during the application of the envelope ⁇ body material is not covered with this and must accordingly then does not need to be exposed.
- connection conducted because the ers ⁇ te contacting element is made, that is metallized element to the connection.
- the plurality of contacting elements provided in a preferred embodiment is particularly preferably metallized simultaneously.
- the Aufmetall can be done for example in a bath, de-energized and / or electro-galvanic; Furthermore, the contacting element can also be applied by sputtering, vapor deposition, spraying or flame spraying or can be melted.
- the production is particularly preferably parallelized, wherein a plurality of components are provided on a common carrier.
- this carrier is a separating medium on which the components are arranged at / after separation by for example sawing a Viafers anyway, for example, a so-called dicing tape ⁇ .
- the components are taken individually from such a singulation carrier and placed on a respective separate copper leadframe (pick and place); in contrast, can be dispensed with and Queen ⁇ NEN the provided on the support members separating pa- rallel be housed in the inventive preparation advantageously to this time-consuming process step. For example, it is also possible to house several hundred components simultaneously, which can increase throughput.
- the enveloping bodies may, for example, be applied in a common method step to all components provided on the common carrier, for example by the previously described deep drawing of a film provided as an enveloping body.
- the sheath body can also be cast, in each case a separate cavity may be associated with a mold the components example ⁇ example; the cavities can be filled in succession or in parallel.
- a mold which initially releases the enveloping body of the individual components as a coherent body, so that only after a separation, such as by sawing, laser cutting, punching or water jet cutting, by a section-wise severing of the contiguous envelope body isolated components.
- the contacting elements extend not down to the sections along which is severed (this can for example be referred to as a saw frame who ⁇ the) so when separating only the envelope body must be severed.
- the enveloping bodies can, for example, also be connected via webs, so-called material bridges, so that when material is separated, less material has to be severed (just the material bridges) and, as it were, a predetermined breaking point is predetermined.
- the invention also relates to such a lighting device arrangement in which adjacent lighting devices are connected via material bridges formed integrally with the enveloping bodies. For example, the risk of loss of individual components before assembly can be reduced.
- the components can ⁇ example, via a common carrier are held together, which usually does not correspond to the intended during application of the enveloping body carrier (the components may thus for example of the dicing film to another film to be transferred). However, the components can, for example, be held together by a (still continuous) enveloping body without such a carrier.
- the invention also relates to the use of a lighting device described above for surface bonding, in particular jointing (such as soldering or gluing), on a macroscopic level, ie on the sauceswei ⁇ se a support plate / circuit board.
- jointing such as soldering or gluing
- 1 is a device according to the invention housed with a
- FIG. 2 shows a device according to the invention with a non-reflective insulation layer
- Fig. 3 is a packaged with a thermoformed film Bauele ⁇ ment
- Fig. 4 shows a device according to the invention housed in a
- Fig. 1 shows a first example of a Bau ⁇ part 1 of the invention (lighting device), an LED 2, which is covered by a molded enveloping body 3.
- the figure shows a state even before the separation of the otherwise fully packaged components 1; these still hang integrally with the enveloping body 3 formed material bridges 4 together.
- each LED 2 an anode and a cathode contact.
- the LED 2 is so far upside down mounted in Figure 1, as seen in a conventional housing, the LED metallization 6 opposite side as the underside pre ⁇ and mounted on a support; the corresponding spre ⁇ accordingly overhead LED metallization would be connected via bonding wires to a lead frame normally.
- the LED-metallization 6 downwards and are contact-7 Obliging, professio ⁇ talllaut, the LED 6 and metallization through first sputtering a seed lay ⁇ it; to this a lithographically imageable Mate ⁇ rial is then applied, and the regions for contactless ⁇ t istsetti 7 photolithographically patterned (the seed layer is partially exposed). After depositing a copper layer thereon electrochemically in a bath, the photolithographically patternable material and then also the seed layer under the photolithographically patternable material are removed.
- the LED 2 remote from the lower surface of the Maisie ⁇ insurance elements 7 is designed as a solderable contact surface 8; the provided as an SMD component lighting device 1 is connected over the contact surfaces 8 over a large area with a circuit board.
- the contacting elements 7 are each guided away from the LED 2 laterally outwards, so that the wiring is spread open.
- a silicone molded body is provided in which conversion material (phosphor particles) is embedded.
- the device has a height of 200 ym (depending on the required amount of conversion material is also a higher component possible); the light generation occurs near the LED metallization 6, several microns above it.
- the epi-layers, between which the pn-junction is formed, are presently provided "on" a sapphire substrate (in the figure below a sapphire substrate), the sapphire substrate has a height of about 100 ym and he extends up to the top 9 of the LED 2. In an inventively housed LED 2, this top is provided as Lichtaus ⁇ tread surface 9.
- a reflection ⁇ layer 10 is provided on the underside of LED 2 and enveloping body.
- an electrically insulating matrix material in the present case silicone, is provided, in which titanium dioxide particles are embedded in order to adjust the reflective properties.
- the reflection layer 10 at the same time also serves for insulation and can help prevent the occurrence of electrical short circuits.
- the reflection / insulation layer completely covers the underside of the enveloping body 3 as well as the region of the underside of the LED 2 that is free of the LED metallization 6.
- the reflection / insulation layer 10 also covers in each case an edge region of the LED metallization 6; the overlap in the lateral direction 11 is 10 ym.
- Fig. 2 shows another embodiment of the invention, in which as in the case of those shown in FIG. 1, an LED 2 in egg NEN provided from silicone material enveloping body 3 isShiffer ⁇ tet. Again, it is the state before the separation of the components 1 shown, these are still hanging on the Materialbrü ⁇ CKEN 4 to each other.
- the LED 2 is at JE ner of Figure 2 under no side Reflection ⁇ ons harsh however provided. Instead, the LED 2 is already designed for a light output on the upper side, which in turn forms the light exit surface 9. In the case of the LED 2 2, the light exit surface 9 is therefore already arranged on the connecting elements 6 (the LED metallization) opposite side, which is also referred to as flip-chip technology. In that regard, overall reheat bath no light-reflecting upward Reflection ⁇ onstik is necessary.
- an electrically insulating insulation layer 21 is provided, in this case from Siliziumnit ⁇ chloride.
- the insulation layer 21 provided between the connection elements 6 can help to prevent the formation of electrical short circuits between the connection elements 6 and, to a certain extent, also mechanically protect the underside of the LED 2; For example, damage during assembly of the component 1 on a printed circuit board can be prevented.
- the insulation layer 21 is also aligned with the soflä ⁇ surfaces of the LED 2, so it covers from below a contact area of the LED side surfaces with the envelope 3 from. For example, in the case of a delamination of the enveloping body 3 from one of the side surfaces of the
- LED 2 to prevent the occurrence of an electrical short circuit; For example, such could already be formed during production, when metal accumulates in the intermediate space between LED 2 and enveloping body 3 when the contacting element 7 is metallized and reaches the epi layers.
- the insulating layer 21 is nevertheless provided protruding laterally outward over the LED 2 only 15 ⁇ m, because in this way the smallest possible part of the upper side of the contacting elements 7 is covered.
- the contacting elements 7 made of sputtered aluminum in this embodiment also have a certain reflection function; the laterally adjacent to the LED 2 arranged surface area of the Contacting elements 7 may, for example, reflect outputted from the convergence ⁇ sion material part downward light up and so make usable.
- Fig. 3 shows a further embodiment and in consequence different stages of their production.
- Fig. 3A illustrates the not yet housed LED 2 with the bottom side, the light exit surface 9 oppositely arranged on ⁇ closing elements 6 (flip-chip technology).
- the enveloping body 3 is not poured as in the case of the embodiments according to FIGS. 1 and 2, but is provided as a film.
- the LED 2 is pressed to a certain extent as a drawing punch in the only precrosslinked phosphor film (for example, AF-500 ShinETSU), the envelope 3 thus produced by deep drawing of the phosphor film.
- the contacting elements 7 provided in copper are first of all electrolessly and then electrogalvanically deposited from a bath (compare the explanations regarding the exemplary embodiment according to FIG. 1).
- the insulation layer 21 is provided in alignment only with the lateral contact area of LED side surfaces / foil in order to prevent the formation of short circuits to the epi layers.
- FIG. 3C shows the state before the components 1 are separated; the film 3 is severed in alignment with the respective outer edges of the contacting elements 7.
- the so-called LEDs 2 can be connected, for example by means of a conductive adhesive or a solder on the Kunststoffflä ⁇ chen 8 with a circuit board.
- the Kontak- t istsetti 7 are used in addition to the electrical contacting of the connection elements 3 and to mechanical stabilization, in particular laterally outside the LED 2 lie ⁇ constricting region of the component.
- FIG. 4 shows a component 1 constructed in principle analogously to the embodiment according to FIG. 1, that is to say an LED 2 cast in silicone material as an enveloping body 3 with a reflection layer 10 arranged below LED 2 and enveloping body 3.
- Fig. 4A shows an oblique view of the component 1, as it would be visible for example after mounting on a carrier plate (the contacting elements 7 are below and are not shown for clarity).
- the contacting elements 7 with the large-area Kon are ⁇ clock surfaces 8 to be recognized. Apart from the contact area between the LED metallization 6 and the contacting elements 7, the contacting elements 7 are located on the Refle ⁇ xions slaughter 10, which also serves also an electrical insulation, and can help avoid short circuits between themaschinetechniksele ⁇ elements 7 and the epi-layers.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/786,573 US9559266B2 (en) | 2013-04-25 | 2014-04-07 | Lighting apparatus including an optoelectronic component |
KR1020157033281A KR20160008199A (ko) | 2013-04-25 | 2014-04-07 | 광전자 컴포넌트를 포함하는 조명 디바이스 |
CN201480023672.2A CN105144416B (zh) | 2013-04-25 | 2014-04-07 | 具有光电子器件的照明设备 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013207611.8A DE102013207611A1 (de) | 2013-04-25 | 2013-04-25 | Beleuchtungsvorrichtung mit optoelektronischem Bauelement |
DE102013207611.8 | 2013-04-25 |
Publications (1)
Publication Number | Publication Date |
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WO2014173670A1 true WO2014173670A1 (de) | 2014-10-30 |
Family
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PCT/EP2014/056925 WO2014173670A1 (de) | 2013-04-25 | 2014-04-07 | Beleuchtungsvorrichtung mit optoelektronischem bauelement |
Country Status (5)
Country | Link |
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US (1) | US9559266B2 (de) |
KR (1) | KR20160008199A (de) |
CN (1) | CN105144416B (de) |
DE (1) | DE102013207611A1 (de) |
WO (1) | WO2014173670A1 (de) |
Cited By (1)
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WO2018083187A1 (de) * | 2016-11-04 | 2018-05-11 | Osram Opto Semiconductors Gmbh | Herstellung von strahlungsemittierenden halbleiterbauelementen |
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DE102013205179A1 (de) * | 2013-03-25 | 2014-09-25 | Osram Gmbh | Verfahren zum Herstellen einer elektromagnetische Strahlung emittierenden Baugruppe und elektromagnetische Strahlung emittierende Baugruppe |
DE102015103055A1 (de) * | 2014-12-04 | 2016-06-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
DE102015101143A1 (de) | 2015-01-27 | 2016-07-28 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung |
TW201526315A (zh) | 2015-02-17 | 2015-07-01 | Xiu-Zhang Huang | 覆晶式發光二極體及其製造方法 |
DE102015102699A1 (de) | 2015-02-25 | 2016-08-25 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil |
DE102015107588B4 (de) | 2015-05-13 | 2023-08-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung optoelektronischer Bauelemente und oberflächenmontierbares optoelektronisches Bauelement |
DE102015107586B4 (de) | 2015-05-13 | 2023-10-26 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung optoelektronischer Bauelemente und oberflächenmontierbares optoelektronisches Bauelement |
DE102015109852A1 (de) | 2015-06-19 | 2016-12-22 | Osram Opto Semiconductors Gmbh | Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode |
TW201725763A (zh) * | 2015-06-26 | 2017-07-16 | 億光電子工業股份有限公司 | 發光裝置及其製造方法 |
US10008648B2 (en) | 2015-10-08 | 2018-06-26 | Semicon Light Co., Ltd. | Semiconductor light emitting device |
JP2017135253A (ja) * | 2016-01-27 | 2017-08-03 | オムロン株式会社 | 発光装置、および発光装置の製造方法 |
DE102016101652A1 (de) | 2016-01-29 | 2017-08-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit Seitenkontakten |
DE102016103059A1 (de) * | 2016-02-22 | 2017-08-24 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements |
CN109196667B (zh) | 2016-03-07 | 2022-02-25 | 世迈克琉明有限公司 | 半导体发光元件及其制造方法 |
DE102016106494A1 (de) | 2016-04-08 | 2017-10-12 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements |
JP6848245B2 (ja) * | 2016-07-27 | 2021-03-24 | 日亜化学工業株式会社 | 発光装置 |
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- 2014-04-07 US US14/786,573 patent/US9559266B2/en not_active Expired - Fee Related
- 2014-04-07 KR KR1020157033281A patent/KR20160008199A/ko not_active Application Discontinuation
- 2014-04-07 CN CN201480023672.2A patent/CN105144416B/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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CN105144416B (zh) | 2017-10-20 |
KR20160008199A (ko) | 2016-01-21 |
CN105144416A (zh) | 2015-12-09 |
DE102013207611A1 (de) | 2014-10-30 |
US9559266B2 (en) | 2017-01-31 |
US20160087161A1 (en) | 2016-03-24 |
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