WO2014168578A1 - Perfectionnement apporté à la variation d'épaisseur totale d'une liaison de tranches au moyen d'un procédé de confinement de contour - Google Patents

Perfectionnement apporté à la variation d'épaisseur totale d'une liaison de tranches au moyen d'un procédé de confinement de contour Download PDF

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Publication number
WO2014168578A1
WO2014168578A1 PCT/SG2013/000143 SG2013000143W WO2014168578A1 WO 2014168578 A1 WO2014168578 A1 WO 2014168578A1 SG 2013000143 W SG2013000143 W SG 2013000143W WO 2014168578 A1 WO2014168578 A1 WO 2014168578A1
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WO
WIPO (PCT)
Prior art keywords
adhesive
wafer
wafer carrier
viscosity
cross
Prior art date
Application number
PCT/SG2013/000143
Other languages
English (en)
Inventor
Loke Yuen WONG
Chin Hock TOH
Original Assignee
Applied Materials South East Asia Pte. Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials South East Asia Pte. Ltd. filed Critical Applied Materials South East Asia Pte. Ltd.
Priority to PCT/SG2013/000143 priority Critical patent/WO2014168578A1/fr
Publication of WO2014168578A1 publication Critical patent/WO2014168578A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Definitions

  • This relates to the bonding and processing of thin wafers, in particular to such bonding and processing associated with the manufacture of silicon chips.
  • Wafer bonding is a process where two wafers are bonded temporary or permanently together. These two wafers can either be a silicon wafer bonded to another silicon wafer or a silicon wafer bonded to a glass wafer.
  • Temporary wafer bonding is mainly used in the field of advanced packaging where silicon device wafers and/or silicon dies are thinned (known as thin wafer processing) and stacked vertically together to enhance their overall performance. This will also improve the overall form factor of end-products by creating smaller and more powerful computer chips.
  • wafers are temporarily bonded to a glass or silicon wafer carrier using an adhesive applied to the wafer carrier via conventional spin-coating techniques, prior to the start of the thinning process.
  • the use of wafer carriers as a temporary support carrier introduces its own problems during the thin wafer processing procedures.
  • the wafer thinning process e.g. backgrinding
  • TTV total thickness variation
  • the silicon device will incur an undulating topography that can cause detrimental effects (i.e.
  • the spin-coated adhesive results in a TTV of the adhesive on the carrier of less than 5%, however, during the wafer bonding process, as the wafer and carrier are brought together the adhesive towards the periphery of the wafer tends to be 'squeezed out'.
  • This peripheral flow of adhesive causes the TTV of the adhesive around the periphery to be greater than 10%.
  • the bonded wafer's profile on the carrier tends to be bowed or otherwise possess a slight camber which has implications for the TTV of the final thinned device wafer.
  • the silicon device wafer and glass wafer are permanently bonded as part of the device structure.
  • the bonding adhesive is also spin-coated which can ultimately result in high TTV when the two wafers are bonded together.
  • Another problem caused by this adhesive flow is contamination within the processing chamber containing the wafer.
  • a method of bonding a wafer to a wafer carrier including the steps of: a) providing a wafer;
  • the step of increasing the viscosity of the adhesive includes subjecting at least a portion of the adhesive to one or more forms of electromagnetic radiation to alter a property of that portion of the adhesive which will raise its viscosity.
  • the type of electromagnetic radiation employed to increase the adhesive viscosity will depend on the adhesive. If the adhesive does not contain any cross-linking agents, then thermal radiation could be used either to warm or cool the adhesive. If the temperature of the adhesive is lowered, its viscosity will tend to increase and if the temperature of the adhesive is raised, solvent within the adhesive will be driven off with the result that once again its viscosity will tend to increase. If however, the adhesive contained a cross-linking agent, then the option of at least partially cross-linking the adhesive to increase its viscosity also exists. Depending on the type of cross-linking agents used, such partial cross-linking could be achieved either thermally, or through the use of use of photo-chemical reactions such as ultraviolet radiation or through a combination of both.
  • the step of increasing the viscosity of the adhesive includes raising or lowering the temperature of the adhesive and/or partially cross-linking the adhesive.
  • the step of partially cross- linking the adhesive includes cross-linking the adhesive using infra-red and/or ultra-violet radiation.
  • the ultra-violet source will in one embodiment be designed to emit radiation in the wavelength of 250-400nm as a broad band or at specific frequencies which match the absorption bands of the cross-linking agents (photo-initiators or photosensitive
  • ultra-violet sources include medium pressure mercury vapour lamps, light emitting diodes and excimer flash lamps with output power intensities of at least
  • Infra-red radiation on the other hand used to warm the adhesive (ie raise its temperature above ambient) would either at least partially cross-link the adhesive or drive off solvent, either way increasing the viscosity.
  • An infra-red radiation source that emits in the wavelength range of 750nm to 1 mm could be used. Examples of infra-red sources which could be used include a quartz heat lamp with a tungsten filament.
  • One way to control the TTV of the adhesive during the wafer bonding process using the method steps described herein would be to impose a concentric variation in the level of electromagnetic (eg temperature (infra-red) or ultra-violet) radiation spanning the entire face of what will become the wafer covering portion of the adhesive.
  • This can be achieved by subjecting the adhesive to electromagnetic radiation from either: a) one or more concentric closed loop substantially contiguous bands, each band
  • each band emitting either the same or different levels of electromagnetic radiation (thus only subjecting those portions of the adhesive defined by the thickness of the bands of the electromagnetic radiation to varying degrees of electromagnetic radiation - and leaving the remainder of the adhesive essentially unaffected).
  • the portion of the adhesive subjected to electromagnetic radiation includes one or more closed loops of a defined thickness across the adhesive surface. In such form the closed loops may be substantially contiguous or non-contiguous. If only one closed loop of adhesive is subjected to electromagnetic radiation, in one embodiment therefore, the portion of the adhesive selected is located about the periphery of where the wafer is going to be bonded to the wafer carrier.
  • the or each closed loop is a substantially circular loop. If the closed loops are non-contiguous, then the radial spacing between each closed loop can be the same or different, however in one embodiment, the radial spacing is the same.
  • a 'reverse profile' of electromagnetic radiation can be applied to fully cross-link the adhesive. This can be achieved by simply reversing the profile of the electromagnetic radiation initially applied during the method. In other words, where the level of electromagnetic radiation initially applied was the highest, it is now the lowest and similar reverses are applied across each closed loop.
  • the method further includes the step of cross-linking the remainder of the adhesive once the wafer has been bonded to the wafer carrier. Fully cross-linking the adhesive in this way (when possible) has the advantage that it promotes a stronger adhesive bond between the wafer carrier and the wafer itself.
  • a method of thin wafer processing including the steps of:
  • a silicon chip manufacturing facility incorporating a method of bonding a wafer as described herein, or a method of thin wafer processing as described herein as well as apparatus as described herein for use in the aforementioned methods.
  • a wafer bonding apparatus for use in the field of microelectronics including:
  • an electromagnetic radiation emitter fitted to the housing and adapted to increase the viscosity of an adhesive located on a wafer or wafer carrier;
  • the emitter includes one or more closed loops, the or each closed loop being adapted to emit either a fixed or an adjustable amount of electromagnetic radiation.
  • the or each closed loop has a defined thickness and if more than one closed loop exists, the thickness of each closed loop may be such that each loop is contiguous or each loop may exist as a discrete band. Accordingly, in the latter case, in use less viscous adhesive will be trapped within the confines of the more viscous bands or closed loops of adhesive subjected to radiation from the emitter.
  • each closed loop could be designed to emit infra-red radiation (thermal radiation either above room temperature to warm up the adhesive or be so designed as to enable the adhesive to be cooled below room temperature to cool it down) and another could be designed to emit ultraviolet radiation.
  • infra-red radiation thermal radiation either above room temperature to warm up the adhesive or be so designed as to enable the adhesive to be cooled below room temperature to cool it down
  • ultraviolet radiation ultraviolet radiation
  • each closed loop could be designed to emit either infra-red or ultra-violet radiation. If only one closed loop existed it could be designed to emit for example, one of the aforementioned types of electromagnetic radiation. If the apparatus includes more than one closed loop, each closed loop will be independently electrically wired to a controller or actuator enabling each of the closed loops to be actuated either singly or together. In addition, the controller will be provided with means to vary the intensity of the radiation emitted from the or each of the closed loops. Although a coil could be used, in one embodiment, each closed loop on the emitter is a planar closed loop. In such form, the cross section of the closed loop would be circular.
  • each closed loop need not have a common centre, for example, in one embodiment, each closed loop is concentric.
  • each closed loop is circular.
  • the spacing between any two adjacent closed loops is substantially identical.
  • the housing is so sized and shaped as to span the dimensions of a wafer carrier.
  • the apparatus further includes a chuck adapted to support wafer carrier.
  • the apparatus could be a stand-alone piece of equipment in its own right to be used in conjunction with existing apparatuses employed in the manufacture of stacked integrated circuits
  • the housing for the emitters could in principle, be incorporated into existing apparatus already used in the field.
  • the chuck used to carry a wafer carrier forms the housing.
  • Fig 1 shows a step in the method employing an embodiment using temperature in the form of infra-red radiation emitters, whereby successive concentric rings of thermally cross-linkable adhesive are heated to provide a varying temperature profile across a chuck carrying a wafer carrier spin coated with such an adhesive on its upper surface which will tend to drive off solvent and to thermally cross-link the adhesive to varying degrees across the temperature profile, the greatest extent of cross-linking occurring towards the periphery of the chuck.
  • Fig 2 shows the next step in the method which follows on from the step shown in Fig 1 , the bonding of the wafer to the adhesive possessing the varying temperature profile.
  • Fig 3 shows an optional final step in this embodiment of the method involves reversing the temperature profile to that shown in Fig 1 which will tend to drive off solvent in the remaining areas of the adhesive and to thermally cross-link the remainder of the adhesive.
  • Fig 4 is a schematic cross-sectional view of one embodiment showing a plurality of electromagnetic radiation emitters located in a housing sat above an adhesive covered wafer carrier.
  • Fig 5 is a schematic plan view of the underside of the 'top stage' or housing of the embodiment shown in Fig 4 illustrating the shape of the housing and arrangement of planar circular closed loops of electromagnetic radiation emitters.
  • Fig 6 is a schematic cross-sectional view of another embodiment whereby the
  • electromagnetic radiation emitters form part of a chuck adapted to support a wafer carrier.
  • Fig 7 is a schematic plan view of the top of the chuck shown in Fig 6 illustrating the arrangement of planar circular rings of electromagnetic radiation emitters located within the chuck.
  • Fig 8 shows a step in a method employing an embodiment using ultra-violet radiation emitters whereby successive concentric rings of UV cross-linkable adhesive are actuated to provide a varying intensity profile across a chuck carrying a wafer carrier spin coated with such an adhesive on its upper surface which cross-link the adhesive to varying degrees across the temperature profile, the greatest extent of cross-linking occurring towards the periphery of the chuck.
  • Fig 9 shows the next step in the method which follows on from the step shown in Fig 8, the bonding of the wafer to the adhesive possessing the varying degree of cross-linking profile.
  • Fig 10 shows an optional final step in this UV embodiment of the method which involves reversing the intensity profile to that shown in Fig 8 which will cross-link the remainder of the adhesive.
  • Fig 1 1 shows a step in a method similar to that shown in Figs 1 -3 however, in this particular method, the adhesive does not contain any cross-linking agent and solvent within the adhesive is simply driven off.
  • Fig 12 shows the next step in the method which follows on from the step shown in Fig 11, the bonding of the wafer to the adhesive possessing the varying temperature profile.
  • Fig 13 shows an optional final step in this embodiment of the method involves reversing the temperature profile to that shown in Fig 13 which will tend to drive off solvent in the remaining areas of the adhesive.
  • Fig 14 also shows a step in a method somewhat similar to that shown in Figs 1-3 however, in this particular method, the adhesive which may or may not contain cross-linking agent is cooled and not warmed.
  • Fig 15 shows the next step in the method which follows on from the step shown in Fig 14, the bonding of the wafer to the adhesive possessing the varying temperature profile.
  • Fig 16 shows an optional final step in this embodiment of the method involves reversing the temperature profile to that shown in Fig 14. Description of the embodiments.
  • Fig 1 The first step of a method of altering the viscosity of an adhesive (containing a cross-linking agent) which has been applied to a wafer carrier via spin coating is shown in Fig 1 and is generally referenced 10.
  • concentric contiguous circular bands of the adhesive are each heated by a 'controlled contour heating chuck' 12 to varying degrees, the central circular portion 13 of the adhesive 14, not being heated at all, the next circular band being heated by a certain amount, the next band radiating from the centre being heated somewhat more, the next band more still, until the outermost peripheral band 15, is heated the most.
  • Fig 2 simply shows the next step of the method generally referenced 19, and simply shows the application of a wafer 20 (referred to as a 'device' 20 or 'device wafer' in Fig 2 and certain others) to the adhesive 14 sat on the wafer carrier 18 which has been subjected to the heat treatment/cross-linking profile shown in Fig l.As indicated by the arrows in Fig 2 the adhesive 14 is now resisting its desire to run towards the periphery of the wafer 20.
  • a wafer 20 referred to as a 'device' 20 or 'device wafer' in Fig 2 and certain others
  • Fig 3 shows a further (optional) step in the method generally referenced 21 , once the wafer 20 has been bonded to the adhesive 14.
  • a reverse temperature profile 23 is applied to the adhesive 14, now the central circular portion 13 of the adhesive 14 is heated to the same temperature as the outermost circular band 15 in the first step of the method in Fig 1 and the outermost band 15 is not heated at all.
  • the corresponding reverse in temperature profile for the remaining bands also occurs and this is shown more clearly in the temperature/distance profile graph 23 shown in Fig 3.
  • the wafer 20 being shown as firmly bonded to the wafer carrier 18 via the adhesive 14 with a much reduced amount of adhesive 14 being 'squeezed out' at the periphery to drive off the remaining solvent and to fully thermally cross-link the remainder of the adhesive 14.
  • a first embodiment of a wafer bonding apparatus generally referenced 24 is shown in Fig 4 and includes a circular cylindrical housing 25 or 'top stage' having upper and lower in use surfaces and incorporated within the lower surface are a series of concentric substantially evenly spaced (non-contiguous) ultra-violet emitters 26, each adapted to heat adhesive 14 located on the wafer carrier 18 which is supported on a chuck 27.
  • An actuator 28 referenced as a controller in Fig 4 is operatively connected to each of the independently controllable emitters 26 by electrical wiring 29 to actuate them either together or singly.
  • the emitter housing 25 is sat above and spans both the adhesive 14 and the wafer carrier 18, and the circular chuck 27.
  • each emitter is formed from a plurality of planar concentric closed loops and in this embodiment, each loop comprises a UV excimer flash lamp with an adjustable UV output through the employment of a pulse forming network.
  • the apparatus is not physically linked to existing apparatus normally associated with wafer thinning such as the chuck 27 and is instead, a stand-alone moveable piece of equipment.
  • the adhesive 14 contains cross-linking agents activated by the excimer and relies on cross-linking to increase its viscosity prior to the wafer 20 being bonded to the wafer carrier 18 via the adhesive 14.
  • a wafer carrier 18 is placed onto chuck 27 prior to wafer bonding.
  • An adhesive 14 incorporating a cross-linking agent is spin coated onto the wafer carrier 18 and the apparatus 24 and in particular the housing 25 is sat above the adhesive covered wafer carrier 18 in the manner depicted in Fig 4.
  • the UV emitters 26 are each turned on by the actuator 28, the settings of each emitter 26 having been pre-set (to different intensities) and circular bands of the adhesive 14 corresponding to the dimensions of each of the emitters begin to increase in viscosity as the cross-linking agents within the bands begin to cross-link the adhesive 14.
  • the emitters 26 are then turned off when a sufficient viscosity has been achieved and the apparatus 24 removed.
  • a wafer 20 is then bonded to the partially cross-linked adhesive 14, the outermost band corresponding substantially to the circumference of the wafer 20.
  • the degree of 'run' of the adhesive 14 is reduced as the flowable amounts of adhesive 14 are substantially trapped within the walls of the partially cross-linked bands of adhesive 14.
  • Fig 6 shows an alternative embodiment of the apparatus generally referenced 29 whereby instead of it being a separate stand-alone piece of equipment like the embodiment in Fig 5, the emitters 30 which in this embodiment are infra-red emitters 30 are incorporated or otherwise housed in the chuck 31.
  • Chuck 31 is similar to chuck 12 in so far as the emitters 30 are housed within the chuck, however, unlike chuck 12 where each emitter incorporated therein is in contiguous contact with each other, the emitters 30 in this embodiment comprise a series of concentric planar circular rings, each ring being evenly spaced from its neighbour or neighbours and thus, are non-contiguous with their neighbours. They comprise adjustable tungsten filament infra-red emitters 30.
  • Fig 7 shows the upper in use surface of the chuck 31 before the wafer carrier 18 is placed upon it and unlike the embodiment in Fig 4, the emitters 30 are adapted to warm the adhesive 32 indirectly (essentially in a similar indirect way as that shown in Figs 1 and 3 of the method steps) by first warming the wafer carrier 18, which in turn will warm the adhesive 32.
  • the adhesive 32 unlike the adhesive 14 does not contain any cross-linking agents and simply relies on heat from the infra-red emitters 30 to drive off solvent within the adhesive to increase the viscosity prior to the wafer 20 being bonded to the wafer carrier 18.
  • the wafer carrier 18 is placed onto chuck 30 prior to wafer bonding and thinning.
  • An adhesive 32 is spin coated onto the wafer carrier 18 providing the chuck 31 and wafer carrier coated in adhesive 32 depicted in Fig 6.
  • the outer circular infra-red emitter 30 located in the chuck 31 is then turned on by the actuator (not illustrated) and a band of adhesive which overlies the dimensions of the outermost emitter begins to warm, solvent begins to evaporate at a faster rate than it can be replaced through the concentration gradient being established within the adhesive 32 and the viscosity of the adhesive in the band begins to increase.
  • the emitter After a set time, the emitter is turned off leaving the viscosity in the band higher compared to the rest of the adhesive 32 so that the adhesives cannot flow to the wafer edges. A wafer 20 is then bonded to the adhesive.
  • the infra-red emitters are then again actuated in such a manner that a reverse temperature profile of the type indicated in Fig 3 is now applied to the adhesive 32 to drive off the solvent from the rest of the adhesive 32 firmly bonding the wafer 20 to the adhesive 32.
  • Thin wafer processing can now take place by employing thin wafer processing techniques known in the art.
  • FIG 8 Another embodiment of the method is depicted in Fig 8 and is generally referenced 40 shows concentric contiguous circular bands of the adhesive 14 that are irradiated by a wafer bonding apparatus generally similar to that depicted in Fig 4 save for the fact that the circular bands of emitters are contiguous.
  • a varying intensity profile 41 of UV emission results in the outermost bands being the most heavily cross-linked.
  • a chuck 42 carrying a wafer carrier 18 spin coated with such an adhesive 14 on its upper surface will lead to an adhesive 14 cross- linked to varying degrees across the intensity profile, the greatest extent of cross-linking occurring towards the periphery of the chuck.
  • the remaining step 42 or steps 42 and 43 in the method are essentially as shown in Figs 9 and 10.
  • Fig 1 1 Another embodiment of the method is also depicted in Fig 1 1 and is generally referenced 50. It is essentially identical to the method depicted in Figs 1 to 3 however, in this method, the adhesive 32 does not contain cross-linking agent and the solvent is simply driven off. The remaining step 51 or steps 51 and 52 in the method are essentially as shown in Figs 12 and 13.
  • Fig 14 Yet another embodiment of the method is depicted in Fig 14 and is generally referenced 60.
  • a chuck 61 with circular contiguous (although in non-illustrated embodiments they may be non-contiguous) cooling bands cool the adhesive 14 or 32 (it may or may not contain cross-linking agent) with the warmest part of the chuck 62 being in the centre and the coolest 63 being at the periphery.
  • the periphery of the adhesive 14 or 32 will be the most viscous.
  • the remaining step 64 or steps 64 and 65 in the method are essentially as shown in Figs 15 and 16.
  • Non-illustrated embodiments of the apparatus could include versions of those previously depicted but where the emitters were in contiguous relationship thus enabling the method depicted in Figs 1 to 3 to take place or could involve both infra-red and UV emitters in the same apparatus, one type being used initially on the adhesive and the other type subsequently being used on the adhesive.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

L'invention concerne un procédé et un appareil permettant de lier des tranches utilisées dans la fabrication de circuits intégrés. Le procédé permettant de lier une tranche à un support de tranche comprend les étapes consistant à fournir une tranche ; à fournir un support de tranche ; à appliquer un adhésif sur la tranche et/ou le support de tranche ; à augmenter la viscosité de l'adhésif pour minimiser l'effet de « fuite » lorsque les deux tranches sont mises en contact l'une avec l'autre. De plus, l'appareil employé dans le procédé comprend un logement ; un émetteur à rayonnement électromagnétique fixé sur le logement et conçu pour augmenter la viscosité d'un adhésif situé sur une tranche ou un support de tranche supporté sur support individuel de tranche en chassant un solvant ou en réticulant partiellement l'adhésif ; et un actionneur fonctionnellement connecté à l'émetteur pour actionner l'émetteur.
PCT/SG2013/000143 2013-04-10 2013-04-10 Perfectionnement apporté à la variation d'épaisseur totale d'une liaison de tranches au moyen d'un procédé de confinement de contour WO2014168578A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/SG2013/000143 WO2014168578A1 (fr) 2013-04-10 2013-04-10 Perfectionnement apporté à la variation d'épaisseur totale d'une liaison de tranches au moyen d'un procédé de confinement de contour

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/SG2013/000143 WO2014168578A1 (fr) 2013-04-10 2013-04-10 Perfectionnement apporté à la variation d'épaisseur totale d'une liaison de tranches au moyen d'un procédé de confinement de contour

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080153258A1 (en) * 2006-12-12 2008-06-26 Erich Thallner Process and device for bonding wafers
US20090317960A1 (en) * 2006-06-29 2009-12-24 Nikon Corporation Wafer bonding apparatus
US20110010908A1 (en) * 2009-04-16 2011-01-20 Suss Microtec Inc Apparatus for thermal-slide debonding of temporary bonded semiconductor wafers
US20120080132A1 (en) * 2010-10-05 2012-04-05 Skyworks Solutions, Inc. Securing mechanism and method for wafer bonder
US20120089180A1 (en) * 2010-05-06 2012-04-12 Duke University Adhesive bonding composition and method of use

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090317960A1 (en) * 2006-06-29 2009-12-24 Nikon Corporation Wafer bonding apparatus
US20080153258A1 (en) * 2006-12-12 2008-06-26 Erich Thallner Process and device for bonding wafers
US20110010908A1 (en) * 2009-04-16 2011-01-20 Suss Microtec Inc Apparatus for thermal-slide debonding of temporary bonded semiconductor wafers
US20120089180A1 (en) * 2010-05-06 2012-04-12 Duke University Adhesive bonding composition and method of use
US20120080132A1 (en) * 2010-10-05 2012-04-05 Skyworks Solutions, Inc. Securing mechanism and method for wafer bonder

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