WO2014168045A1 - 電子部品装置の製造方法 - Google Patents

電子部品装置の製造方法 Download PDF

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Publication number
WO2014168045A1
WO2014168045A1 PCT/JP2014/059644 JP2014059644W WO2014168045A1 WO 2014168045 A1 WO2014168045 A1 WO 2014168045A1 JP 2014059644 W JP2014059644 W JP 2014059644W WO 2014168045 A1 WO2014168045 A1 WO 2014168045A1
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WIPO (PCT)
Prior art keywords
resin
resin sheet
electronic component
substrate
weight
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PCT/JP2014/059644
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English (en)
French (fr)
Japanese (ja)
Inventor
智絵 飯野
豊田　英志
祐作 清水
裕之 千歳
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日東電工株式会社
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Publication of WO2014168045A1 publication Critical patent/WO2014168045A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

Definitions

  • the present invention relates to a method for manufacturing an electronic component device.
  • an electronic component may be sealed with a sealing resin after the electronic component is mounted on a substrate.
  • the sealing resin since the shrinkage rate of the sealing resin is usually larger than the shrinkage rate of the substrate or the like, the sealing resin pulls the substrate. This can cause warping.
  • Patent Document 1 can increase the blending ratio of an inorganic filler by kneading a specific epoxy resin, a curing agent, and an inorganic filler, and then plastically processing the kneaded material to form a resin sheet. Disclosure. Patent Document 2 discloses a method for producing a sheet from a kneaded material such as a resin. However, these documents do not fully study the reduction of warpage.
  • An object of the present invention is to solve the above-mentioned problems and to provide a method for manufacturing an electronic component device that can reduce warpage.
  • the present invention provides a step of preparing a substrate on which electronic components are arranged, a step of preparing a resin sheet, A step of preparing a mold having a protrusion for forming a cut in the resin sheet, a step of laminating the resin sheet on the substrate to form a laminate, and pressing the laminate with the die
  • the present invention also relates to a method of manufacturing an electronic component device, including a step of forming a cut in the resin sheet while sealing the electronic component with the resin sheet.
  • a notch is formed in the resin sheet while sealing the electronic component with the resin sheet using a mold having a convex portion for forming the notch in the resin sheet.
  • the sealing body obtained by this is divided into a plurality of sections by cutting. Since each section contracts in this sealing body, the force with which the resin sheet pulls the substrate can be reduced, and the warpage can be reduced. Note that the present invention is effective because warping can be reduced even in large-format collective sealing where warping is likely to occur.
  • the present invention also relates to an electronic component device obtained by the above method.
  • FIG. (A) is a cross-sectional schematic diagram of a sealing body.
  • B) is a perspective view of a sealing body.
  • A) is a plane schematic diagram of the board
  • B) is the front schematic diagram. It is a front schematic diagram of a resin sheet.
  • A) is a cross-sectional schematic diagram of an upper board and a lower board.
  • B) is a bottom face schematic diagram of an upper board.
  • (A)-(c) is a cross-sectional schematic diagram which shows the modification of an upper board.
  • A)-(b) is a bottom face schematic diagram which shows the modification of an upper board.
  • FIG. 3A is a schematic plan view of the substrate 1 on which the electronic component 2 is arranged.
  • (B) is the front schematic diagram. 3A and 3B, the substrate 1 has a plurality of electronic components 2 mounted thereon.
  • the electronic component 2 is not particularly limited.
  • a SAW (Surface Acoustic Wave) filter a MEMS (Micro Electro Mechanical Systems) such as a pressure sensor and a vibration sensor; an IC (integrated circuit) such as an LSI; a semiconductor such as a transistor; a capacitor ; Resistance and the like.
  • a SAW Surface Acoustic Wave
  • MEMS Micro Electro Mechanical Systems
  • IC integrated circuit
  • semiconductor such as a transistor
  • a capacitor Resistance and the like.
  • the substrate 1 is not particularly limited, and examples thereof include a printed wiring board, a ceramic substrate, a silicon substrate, and a metal substrate.
  • the number of electronic components 2 arranged on the substrate 1 is not particularly limited.
  • the number of electronic components 2 is, for example, 1 or more, preferably 2 or more, and more preferably 100 or more. Moreover, although an upper limit is not specifically limited, For example, it is 10,000 or less.
  • the layout of the electronic component 2 is not particularly limited.
  • the shape of the substrate 1 is not particularly limited, and a substantially polygonal shape or a substantially circular shape can be used.
  • the substantially polygonal shape and the substantially circular shape are shapes when the substrate 1 is viewed in plan.
  • the substantially polygonal shape includes not only a polygonal shape but also a polygon-like shape. Specifically, the substantially polygonal shape includes a polygonal shape, a polygonal similar shape with at least some rounded corners, a polygonal similar shape with at least a part of the side or a part of the side being a curved line, etc. Is included.
  • the substantially polygonal shape is preferably a substantially rectangular shape or a substantially square shape.
  • Such a substantially polygonal substrate 1 preferably has a length of at least one side of 300 mm or more. Thereby, an electronic component apparatus can be manufactured efficiently.
  • the upper limit of the length of one side is not specifically limited, For example, it is 700 mm or less.
  • the substantially circular shape includes not only a circular shape but also a circular similar shape. Specifically, in a substantially circular shape, in addition to a perfect circular shape, an elliptical shape, a circular similar shape in which an uneven portion is formed on at least a part of the circumference, and a linear part (a linear part) on at least a part of the circumference And a circular similar shape in which a wavy line portion is formed on at least a part of the circumference.
  • Such a substantially circular substrate 1 preferably has a diameter or minor axis of 300 mm or more. Thereby, an electronic component apparatus can be manufactured efficiently.
  • the upper limit of a diameter or a short axis is not specifically limited, For example, it is 16 inches or less.
  • the area of the substrate 1 (the area when the substrate 1 is viewed in plan) is preferably, for example, 70,000 to 500,000 mm 2 from the viewpoint that the electronic component device can be efficiently manufactured.
  • FIG. 4 is a schematic front view of the resin sheet 4.
  • the thickness of the resin sheet 4 is not particularly limited, but is preferably 100 ⁇ m or more, more preferably 150 ⁇ m or more.
  • the thickness of the resin sheet 4 is preferably 2000 ⁇ m or less, more preferably 1000 ⁇ m or less. Within the above range, the electronic component can be sealed well.
  • Embodiment 1 shows a case where the resin sheet 4 has a single-layer structure, but a multilayer structure in which two or more resin sheets 4 are laminated may be used. Further, it may be arbitrarily divided in advance. In addition, the resin sheet 4 may be provided with a separator on both sides or one side.
  • the resin sheet 4 can be manufactured by a general method, but a method in which a kneaded product obtained by kneading an epoxy resin, a phenol resin, a thermoplastic resin, a filler, and a curing accelerator is plastically processed into a sheet shape is preferable. Thereby, a filler can be filled highly and curvature can be reduced.
  • an epoxy resin, a phenol resin, a thermoplastic resin, a filler, and a curing accelerator are melt-kneaded with a known kneader such as a mixing roll, a pressure kneader, or an extruder.
  • a known kneader such as a mixing roll, a pressure kneader, or an extruder.
  • the upper limit of the temperature is preferably 140 ° C. or less, and more preferably 130 ° C. or less.
  • the lower limit of the temperature is preferably equal to or higher than the softening point of each component described above, for example, 30 ° C or higher, and preferably 50 ° C or higher.
  • the kneading time is preferably 1 to 30 minutes.
  • the kneading is preferably performed under reduced pressure conditions (under reduced pressure atmosphere), and the pressure under reduced pressure conditions is, for example, 1 ⁇ 10 ⁇ 4 to 0.1 kg / cm 2 .
  • the epoxy resin is not particularly limited.
  • triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
  • the epoxy equivalent is 150 to 250 and the softening point or the melting point is 50 to 130 ° C., solid at room temperature. From the viewpoint, triphenylmethane type epoxy resin, cresol novolac type epoxy resin, and biphenyl type epoxy resin are more preferable.
  • the phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin.
  • a phenol novolac resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resole resin, or the like is used.
  • These phenolic resins may be used alone or in combination of two or more.
  • phenolic resin those having a hydroxyl equivalent weight of 70 to 250 and a softening point of 50 to 110 ° C. are preferably used from the viewpoint of reactivity with the epoxy resin, and in particular, phenol novolak from the viewpoint of high curing reactivity. Resin can be used suitably. From the viewpoint of reliability, low hygroscopic materials such as phenol aralkyl resins and biphenyl aralkyl resins can also be suitably used.
  • Thermoplastic resins include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin , Thermoplastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, fluororesin, styrene-isobutylene-styrene block And a methyl methacrylate-butadiene-styrene copolymer (MBS resin). These thermoplastic resins can be used alone or in combination of two or more. Of these, a styrene-isobutylene-styrene block copolymer is preferred from the viewpoint of low stress and low water absorption.
  • an inorganic filler is preferable.
  • the inorganic filler include quartz glass, talc, silica (such as fused silica and crystalline silica), alumina, aluminum nitride, silicon nitride, and boron nitride.
  • silica and alumina are preferable, and silica is more preferable because the linear expansion coefficient can be satisfactorily reduced.
  • Silica is preferably fused silica and more preferably spherical fused silica because it is excellent in fluidity.
  • the average particle size of the filler is preferably 1 ⁇ m or more, more preferably 5 ⁇ m or more. When the thickness is 1 ⁇ m or more, it is easy to obtain flexibility and flexibility of the resin sheet 4.
  • the average particle size of the filler is preferably 40 ⁇ m or less, more preferably 30 ⁇ m or less. When it is 40 ⁇ m or less, it is easy to increase the filling rate of the filler.
  • the average particle diameter can be derived, for example, by using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
  • the curing accelerator is not particularly limited as long as it can cure the epoxy resin and the phenol resin, and examples thereof include organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate; 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole.
  • organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate
  • 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole.
  • 2-phenyl-4,5-dihydroxymethylimidazole is preferred because the curing reaction does not proceed rapidly even when the temperature during kneading increases, and the resin sheet 4 can be satisfactorily produced.
  • a flame retardant component a pigment, a silane coupling agent, and the like together with an epoxy resin, a phenol resin, a thermoplastic resin, a filler, and a curing accelerator.
  • the kneaded material after melt-kneading is preferably subjected to plastic working in a high temperature state without cooling.
  • the plastic working method is not particularly limited, and examples thereof include a flat plate pressing method, a T die extrusion method, a screw die extrusion method, a roll rolling method, a roll kneading method, an inflation extrusion method, a coextrusion method, and a calendering method.
  • the plastic working temperature is preferably not less than the softening point of each component described above, and is 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C. in consideration of the thermosetting property and moldability of the epoxy resin. is there.
  • the total content of the epoxy resin and the phenol resin in the resin sheet 4 is preferably 2.0% by weight or more, and more preferably 3.0% by weight or more. Adhesive force with respect to the electronic component 2, the board
  • the total content of the epoxy resin and the phenol resin in the resin sheet 4 is preferably 20% by weight or less, and more preferably 10% by weight or less. If it is 20% by weight or less, the hygroscopicity can be kept low.
  • the blending ratio of the epoxy resin and the phenol resin is blended so that the total of hydroxyl groups in the phenol resin is 0.7 to 1.5 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin from the viewpoint of curing reactivity. It is preferable to use 0.9 to 1.2 equivalents.
  • the content of the thermoplastic resin is preferably 10 to 50% by weight in 100% by weight of organic components (all components excluding filler). Within the above range, flexibility, flexibility, adhesiveness, etc. can be obtained satisfactorily.
  • the content of the filler in the resin sheet 4 is preferably 70% by volume or more, and more preferably 74% by volume or more.
  • a linear expansion coefficient can be designed low as it is 70 volume% or more.
  • the filler content is preferably 90% by volume or less, more preferably 85% by volume or less.
  • liquidity, and adhesiveness are favorably obtained as it is 90 volume% or less.
  • the filler content can also be explained by using “% by weight” as a unit. Typically, the content of silica will be described in units of “% by weight”. Since silica usually has a specific gravity of 2.2 g / cm 3 , the preferred range of the silica content (% by weight) is, for example, as follows. That is, the content of silica in the resin sheet 4 is preferably 81% by weight or more, and more preferably 84% by weight or more. 94 weight% or less is preferable and, as for content of the silica in the resin sheet 4, 91 weight% or less is more preferable.
  • the preferred range of the alumina content is, for example, as follows. That is, the content of alumina in the resin sheet 4 is preferably 88% by weight or more, and more preferably 90% by weight or more. 97 weight% or less is preferable and, as for content of the alumina in the resin sheet 4, 95 weight% or less is more preferable.
  • the content of the curing accelerator is preferably 0.1 to 5 parts by weight with respect to 100 parts by weight of the total of the epoxy resin and the phenol resin.
  • the content of the flame retardant component is preferably 10 to 30% by weight in 100% by weight of the organic component (all components excluding the filler).
  • the content of the silane coupling agent is preferably 0.01 to 3 parts by weight with respect to 100 parts by weight of the filler.
  • FIG. 5A is a schematic front view of the upper plate 12 and the lower plate 13.
  • FIG. 4B is a schematic bottom view of the upper plate 12.
  • the mold 11 includes an upper plate 12 and a lower plate 13, and the upper plate 12 and the lower plate 13 are substantially parallel.
  • a convex portion 14 extending toward the lower plate 13 is formed on the working surface of the upper plate 12 (the surface in contact with the product to be molded).
  • the working surface of the upper plate 12 is flat except for the convex portion 14. Note that the working surface of the upper plate 12 may not be flat in the portion excluding the convex portion 14 depending on the type of the molded product.
  • the upper plate 12 can move toward the lower plate 13. In the mold 11, the upper plate 12 is lowered with the molded product placed on the lower plate 13, and the protrusions 14 are bitten into the molded product to form cuts.
  • the upper plate 12 can be lowered until the convex portion 14 contacts the lower plate 13, or may be set so that the convex portion 14 does not contact (not reach) the lower plate 13.
  • the height of the convex portion 14 is not particularly limited, but is preferably 1/2 times or more, more preferably 2/3 times or more the thickness of the resin sheet 4. When it is 1/2 times or more, the independence of the section 22 can be increased, and the warp can be favorably reduced.
  • the height of the convex portion 14 is, for example, 1 time or less with respect to the thickness of the resin sheet 4. When it is 1 or less, it can be effectively sealed without generating a void between the resin sheet 4 and the upper plate 12. In addition, the height of the convex part 14 may exceed 1 time depending on the kind of to-be-molded product.
  • the width of the convex portion 14 is not particularly limited, but is preferably 2 to 4 mm. When it is 2 mm or more, warpage can be reduced satisfactorily. Moreover, the manufacturing efficiency of an electronic component apparatus does not fall that it is 4 mm or less.
  • the convex portions 14 are formed in a lattice shape in a bottom view.
  • pressing is performed in a state where the electronic component 2 is set below a space 15 (FIG. 5A) surrounded by the convex portions 14.
  • the size of the space 15 (the size in the bottom view) is not particularly limited, but is preferably larger than the electronic component 2, for example, 105% or more of the size of the electronic component 2.
  • the cross-sectional shape of the convex portion 14 (the cross-sectional shape when the upper plate 12 is cut in the vertical direction) is a triangular shape (a pointed shape) is shown.
  • the triangular shape is preferable because the convex portion 14 can smoothly enter the resin sheet 4 and the displacement of the electronic component 2 can be suppressed.
  • the shape of the convex portion 14 is not limited to this, and may be, for example, a curved shape or a wavy shape. Good.
  • the convex portions 14 are continuously formed in a bottom view, but the shape of the convex portions 14 is not limited to this, and for example, as shown in FIGS. As shown, the protrusions 14 may be formed intermittently. For the reason that the resin sheet 4 can effectively reduce the pulling force of the substrate 1 and the effect of reducing warpage is large, it is preferable to form the convex portions 14 continuously.
  • Embodiment 1 shows a case where the cross-sectional shapes of the convex portions 14 are the same, but they may be different.
  • the width of each convex portion 14 may be different.
  • the bottom view shape of each convex part 14 may differ.
  • FIGS. 1A and 1B are schematic views showing one manufacturing process in the manufacturing method of the first embodiment.
  • the resin sheet 4 is laminated on the surface of the substrate 1 on which the electronic component 2 is mounted to form a laminate (FIG. 1A).
  • the laminate is pressed with a mold 11. Specifically, as shown in FIG. 1A, the laminate is placed on the lower plate 13 so that the electronic component 2 on the substrate 1 and the space 15 face each other with the resin sheet 4 therebetween, and the upper plate Press 12 down and press. As a result, while the electronic component 2 is sealed, the protrusions 14 are bitten into the resin sheet 4 to form the cuts 16 (FIGS. 2A to 2B).
  • FIG.1 (b) although the case where the upper board 12 is lowered
  • the temperature is, for example, 40 to 100 ° C., preferably 50 to 90 ° C.
  • the pressure is, for example, 0.1 to 10 MPa, preferably 0.5 to 8 MPa
  • the time is, for example, 0 3 to 10 minutes, preferably 0.5 to 5 minutes.
  • it is preferable to press under reduced pressure conditions for example, 0.1 to 5 kPa).
  • the resin sheet 4 is thermoset.
  • the heating temperature is preferably 100 to 200 ° C.
  • the heating time is preferably 10 to 300 minutes. Further, pressure may be applied as necessary, and it is preferably 0.1 to 10 MPa.
  • FIG. 2A is a schematic cross-sectional view of the sealing body 21.
  • FIG. (B) is a perspective view of the sealing body 21.
  • the number of sections is not particularly limited, but warping can be reduced as the number increases.
  • the number of sections is preferably 2 sections or more, more preferably 9 sections or more.
  • the upper limit of the number of divisions is 100,000 or less, for example.
  • the shape of the section 22 can be designed as appropriate.
  • the depth of the cut 16 is not particularly limited, for example, it is preferably 1/2 times or more, more preferably 2/3 times or more the thickness of the sealing body 21. When it is 1/2 times or more, the independence of the section 22 can be increased, and the warp can be favorably reduced.
  • the depth of the cut 16 is, for example, 0.95 times or less with respect to the thickness of the sealing body 21. Further, the notch 16 may penetrate the sealing body 21.
  • the sealing body 21 can be used as a semiconductor device as it is, rewiring or a pump may be formed on the sealing body 21 as necessary. Further, if necessary, the sealing body 21 may be diced into chips. When dicing, alignment may be performed with reference to the notch 16 of the sealing body 21 or the like. Thereby, alignment can be performed easily.
  • the convex portion 14 is formed on the upper plate 12 of the mold 11 in the first embodiment.
  • the present invention is not limited to this, and the convex portion 14 is formed on the lower plate 13. Also good.
  • the section 22 is formed for each electronic component 2, but the section 22 may not be formed for each electronic component 2.
  • Epoxy resin YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, epkin equivalent 200 g / eq. Softening point 80 ° C.)
  • Phenol resin MEH-7785-SS (Maywa Kasei Co., Ltd.) (phenol resin having a biphenylaralkyl skeleton, hydroxyl group equivalent 203 g / eq. Softening point 67 ° C.)
  • Filler FB-9454FC manufactured by Denki Kagaku Kogyo Co., Ltd.
  • Silane coupling agent KBM-403 (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd.
  • Flame retardant FP-100 (phenoxycyclophosphazene oligomer) manufactured by Fushimi
  • Pharmaceutical Carbon black # 20 (particle size 50 nm) manufactured by Mitsubishi Chemical Corporation
  • Thermoplastic resin SIBSTAR 072T (polystyrene-polyisobutylene-polystyrene copolymer) manufactured by Kaneka Corporation
  • Each component was blended according to the blending ratio described below, and melt-kneaded in a roll kneader at 60 to 120 ° C. for 10 minutes under reduced pressure conditions (0.01 kg / cm 2 ) to prepare a kneaded product.
  • the obtained kneaded material was formed into a sheet shape by a flat plate pressing method, and a resin sheet (150 mm ⁇ 150 mm) having a thickness shown in Table 1 was produced.
  • the molded product was taken out and cured in an oven at 150 ° C. for 1 hour. Then, what was cooled at room temperature for 1 hour was used as a sample. The sample was placed on a horizontal table, and the distance between the table and the corner of the sample was measured with a ruler. The distance was measured for four corners and the average value was obtained. Table 1 shows the average value obtained as the amount of warpage.
  • Samples (samples divided into silicon chips by cutting) were prepared in the same manner as in the comparative example, except that an instantaneous vacuum laminator equipped with an upper plate as shown in FIGS. 5 (a) to 5 (b) was used. did. The amount of warpage was evaluated using the obtained sample.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Sealing Material Composition (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
PCT/JP2014/059644 2013-04-08 2014-04-01 電子部品装置の製造方法 WO2014168045A1 (ja)

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JP5976073B2 (ja) * 2014-11-07 2016-08-23 日東電工株式会社 半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000124167A (ja) * 1998-10-20 2000-04-28 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2011124381A (ja) * 2009-12-10 2011-06-23 Nitto Denko Corp 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000124167A (ja) * 1998-10-20 2000-04-28 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2011124381A (ja) * 2009-12-10 2011-06-23 Nitto Denko Corp 半導体装置の製造方法

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