WO2014155850A1 - Procédé de fabrication pour dispositif semi-conducteur optique - Google Patents

Procédé de fabrication pour dispositif semi-conducteur optique Download PDF

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Publication number
WO2014155850A1
WO2014155850A1 PCT/JP2013/083084 JP2013083084W WO2014155850A1 WO 2014155850 A1 WO2014155850 A1 WO 2014155850A1 JP 2013083084 W JP2013083084 W JP 2013083084W WO 2014155850 A1 WO2014155850 A1 WO 2014155850A1
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Prior art keywords
stage
phosphor sheet
manufacturing
prototype
optical semiconductor
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PCT/JP2013/083084
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English (en)
Japanese (ja)
Inventor
恭也 大薮
明人 二宮
伊藤　久貴
栄弘 梅谷
宗久 三谷
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日東電工株式会社
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Application filed by 日東電工株式会社 filed Critical 日東電工株式会社
Priority to KR1020157026060A priority Critical patent/KR20150135286A/ko
Priority to CN201380072837.0A priority patent/CN104995755A/zh
Publication of WO2014155850A1 publication Critical patent/WO2014155850A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Definitions

  • the present invention relates to an optical semiconductor device manufacturing method, and more particularly, to an optical semiconductor device manufacturing method in which an optical semiconductor element is covered with a phosphor sheet.
  • an LED device is manufactured by covering and sealing an LED with a phosphor sheet containing a phosphor.
  • the light emitted from the LED is wavelength-converted by the phosphor sheet, and the wavelength-converted light is irradiated to the outside.
  • the color temperature of the light emitted from the LED device further includes, for example, optical characteristics of the phosphor sheet, specifically, the shape of the phosphor sheet, the arrangement of the phosphor sheet with respect to the LED, the fluorescence This greatly depends on the phosphor content in the body sheet.
  • a phosphor sheet is preformed from a flexible capsule material into which a phosphor is injected, and this phosphor sheet is placed on an LED mounted on a substrate, and then a voltage is applied to the LED. Then, the LED is caused to emit light, and the color temperature is measured and inspected.
  • the phosphor sheet is cured by heating and is permanently laminated to the LED and the substrate.
  • the phosphor sheet is peeled off from the LED and the substrate, and then another type of phosphor sheet is again placed on the LED mounted on the substrate, and then Inspect as above.
  • each product is inspected to determine whether or not the color temperature is appropriate. If not, the phosphor sheet is removed each time. Since it is replaced, there is a problem that the manufacturing efficiency of the LED device cannot be sufficiently improved.
  • An object of the present invention is to provide an optical semiconductor device capable of obtaining an optical semiconductor device having excellent light emission reliability by improving the accuracy of manufacturing conditions while improving the manufacturing efficiency while using a phosphor sheet of a B stage. It is in providing the manufacturing method of.
  • the method for manufacturing an optical semiconductor device of the present invention is an optical semiconductor device manufacturing method for covering an optical semiconductor element with a phosphor sheet, based on a prototype process for making a prototype and evaluating the prototype, Determining a manufacturing condition for manufacturing the optical semiconductor device; and, based on the manufacturing condition determined in the determining process, covering the optical semiconductor element with the phosphor sheet of a B stage, A phosphor sheet is made into a C-stage, and includes a manufacturing process for manufacturing the optical semiconductor device, wherein the prototype process is a varnish preparation process for preparing a varnish containing a phosphor and a curable resin, and the fluorescence of the B stage from the varnish.
  • B-stage forming process for forming body sheet, C-stage forming process for converting B-stage phosphor sheet into C-stage, and C-stage phosphor It is characterized by comprising an evaluation step of evaluating over bets.
  • the determining step determines the manufacturing conditions based on the evaluation of the prototype including the C-stage phosphor sheet.
  • the manufacturing process manufactures the optical semiconductor device based on the manufacturing conditions determined in the determining process.
  • the phosphor sheet of the prototype to be evaluated is the C stage. For this reason, in the manufacturing conditions, a change in optical characteristics due to the above-described C-staging is considered in the phosphor sheet.
  • an optical semiconductor device having excellent light emission reliability can be manufactured in the manufacturing process.
  • the optical semiconductor device is manufactured based on the manufacturing conditions determined based on the evaluation of the prototype, the optical semiconductor device can be mass-produced with excellent accuracy. Therefore, the manufacturing efficiency of the optical semiconductor device can be sufficiently improved.
  • the optical semiconductor element in the C-stage forming step, the optical semiconductor element is covered with the phosphor sheet, and in the evaluation step, the optical semiconductor element is covered with the phosphor sheet. It is preferable to evaluate the optical semiconductor device.
  • the optical semiconductor element is covered with the phosphor sheet. That is, a prototype in which an optical semiconductor element is covered with a phosphor sheet and an optical semiconductor device as an actual product can have the same configuration.
  • the trial production process includes the trial production conditions for producing the prototype this time, based on the trial production conditions and evaluation information on the trial production of the prototype before this time, It is preferable to further include a trial condition determination step for determining.
  • the prototyping conditions for prototyping the prototype are determined based on the prototyping conditions and evaluation information for prototyping the prototype before this time.
  • the accuracy of the manufacturing conditions can be improved based on the accumulated trial production conditions and evaluation. Therefore, an optical semiconductor device having excellent light emission reliability can be obtained.
  • manufacturing conditions can be determined with higher accuracy, and an optical semiconductor device that is more excellent in light emission reliability can be obtained.
  • the manufacturing efficiency of the optical semiconductor device can be sufficiently improved.
  • FIG. 1 shows a flowchart of a manufacturing method of an LED device which is an embodiment of a manufacturing method of an optical semiconductor device of the present invention.
  • FIG. 2 shows a flowchart of the prototype process shown in FIG.
  • FIG. 3 shows a flowchart of the manufacturing process shown in FIG.
  • FIG. 4 is a drawing for explaining the varnish preparation step in the trial production step of FIG.
  • FIG. 5 is a drawing for explaining the application of varnish in the B-stage forming process in the prototype process of FIG.
  • FIG. 6 is a drawing for explaining the heating of the varnish in the B-staging process in the prototype process of FIG.
  • FIG. 7 is a drawing for explaining a state before the LED is covered with the B-stage phosphor sheet, which is a C-stage process in the prototype process of FIG.
  • FIG. 8 is a diagram for explaining the state after the LED is covered with the phosphor sheet of the B stage, which is the C stage forming step in the prototype process of FIG.
  • FIG. 9 is
  • the manufacturing method of the LED device 1 is a method of manufacturing the LED device 1 as an optical semiconductor device in which the phosphor sheet 2 covers the LED 3 as an optical semiconductor element, as shown in FIG.
  • the manufacturing method of the LED device 1 determines a manufacturing condition for manufacturing the LED device 1 based on a prototype process S ⁇ b> 1 in which the prototype 6 is prototyped and evaluated, and the evaluation of the prototype 6.
  • a manufacturing process for manufacturing the LED device 1 in which the LED 3 is covered with the phosphor sheet 2 of the B stage and the phosphor sheet 2 is converted to the C stage based on the determination process S2 and the manufacturing conditions determined in the determination process. S3 is provided.
  • the trial production process S1 uses the same production apparatus (production equipment) as the production process S3 described below.
  • the prototype process S1 prototypes a relatively small amount of the prototype 6 as compared with the LED device 1 that is mass-produced in the manufacturing process S3.
  • the number of LED devices 1 to be prototyped in the prototype process S1 is, for example, 100 or less, preferably 10 or less, for example, 1 or more. That is, in the trial production process S1, the prototype 6 is produced on a small scale.
  • the number of LED devices 1 is counted as one corresponding to one substrate 5 regardless of the number of LEDs 3.
  • the trial production step S1 includes a trial production condition determination step S4, a varnish preparation step S5 for preparing a varnish containing a phosphor and a curable resin, and a B stage for forming a B stage phosphor sheet 2 from the varnish.
  • Step S6 a C-stage forming step S7 for converting the B-stage phosphor sheet 2 into a C-stage, and an evaluation step S8 for evaluating the C-stage phosphor sheet 2 are provided.
  • each of the varnish preparation step S5, the B-stage formation step S6, and the C-stage formation step S7 is performed based on the trial production conditions determined in the trial production condition determination step S4.
  • the trial production condition determination step S4 is a process of determining the trial production conditions for making the prototype 6 this time based on the trial production conditions for producing the prototype 6 before this time and information on evaluation.
  • Examples of the information on the trial conditions include information on the varnish, information on the substrate 5, information on the phosphor sheet 2, and the like.
  • Information on the varnish includes, for example, the blending ratio of the phosphor, the average value of the maximum length (average particle diameter in the case of a spherical shape), the absorption peak wavelength, for example, the type of curable resin of the A stage, the viscosity , And the mixing ratio.
  • Information on the substrate 5 includes, for example, the outer shape, dimensions, and surface shape (with or without recesses) of the substrate 5, for example, the shape, dimensions, emission peak wavelength of the LED 3 mounted on the substrate 5, and the unit area of the substrate 5. Examples include the number of LEDs 3 mounted, the number of LEDs 3 mounted per substrate 5, and the like.
  • Information on the phosphor sheet 2 includes, for example, application conditions of the varnish 7 (specifically, shape, thickness, etc. of the varnish 7), heating conditions of the varnish 7 in B-stage formation, irradiation conditions of active energy rays, for example, The heating condition of the phosphor sheet 2 in the C stage, the irradiation condition of the active energy ray, the pressing condition, the thickness of the phosphor sheet 2 of the C stage and the like can be mentioned.
  • Evaluation information includes, for example, the color temperature of the prototype 6, the total luminous flux of the prototype 6, and the like.
  • the prototype condition for the trial production is determined based on the past trial conditions and evaluation information so that the target of the LED device 1 to be prototyped is the color temperature and / or the total luminous flux. To do.
  • prototype conditions and evaluation information prototyped before this time are stored in the memory of a computer that manages the process of this manufacturing method.
  • ⁇ Varnish preparation step S5> In the varnish preparation step S5, first, each of a phosphor and a curable resin is prepared, and these are mixed to prepare a varnish as a phosphor-containing curable resin composition.
  • the phosphor has a wavelength conversion function, and examples thereof include a yellow phosphor capable of converting blue light into yellow light, and a red phosphor capable of converting blue light into red light.
  • yellow phosphor examples include silicate phosphors such as (Ba, Sr, Ca) 2 SiO 4 ; Eu, (Sr, Ba) 2 SiO 4 : Eu (barium orthosilicate (BOS)), for example, Y 3 Al Garnet-type phosphors having a garnet-type crystal structure such as 5 O 12 : Ce (YAG (yttrium, aluminum, garnet): Ce), Tb 3 Al 3 O 12 : Ce (TAG (terbium, aluminum, garnet): Ce) Examples thereof include oxynitride phosphors such as Ca- ⁇ -SiAlON.
  • silicate phosphors such as (Ba, Sr, Ca) 2 SiO 4 ; Eu, (Sr, Ba) 2 SiO 4 : Eu (barium orthosilicate (BOS)
  • Y 3 Al Garnet-type phosphors having a garnet-type crystal structure such as 5 O 12 : Ce (YAG (yttrium, aluminum, garnet): Ce
  • red phosphor examples include nitride phosphors such as CaAlSiN 3 : Eu and CaSiN 2 : Eu.
  • Examples of the shape of the phosphor include a spherical shape, a plate shape, and a needle shape.
  • spherical shape is mentioned from a fluid viewpoint.
  • the average value of the maximum length of the phosphor (in the case of a spherical shape, the average particle diameter) is, for example, 0.1 ⁇ m or more, preferably 1 ⁇ m or more, and for example, 2 ⁇ m or less, preferably 100 ⁇ m or less. It is.
  • the absorption peak wavelength of the phosphor is, for example, 300 nm or more, preferably 430 nm or more, and, for example, 550 nm or less, preferably 470 nm or less.
  • Fluorescent substances can be used alone or in combination.
  • the blending ratio of the phosphor is, for example, 0.1 parts by mass or more, preferably 0.5 parts by mass or more, for example, 80 parts by mass or less, preferably 50 parts by mass with respect to 100 parts by mass of the curable resin. Or less.
  • the curable resin for example, it has a two-stage reaction mechanism, and is a two-stage that is B-staged (semi-cured) by the first-stage reaction and C-staged (completely cured) by the second-stage reaction.
  • examples thereof include curable resins.
  • the two-stage curable resin for example, a two-stage curable thermosetting resin that is cured by heating, for example, two-stage curable active energy beam curing that is cured by irradiation with active energy rays (for example, ultraviolet rays, electron beams, etc.).
  • active energy rays for example, ultraviolet rays, electron beams, etc.
  • a functional resin for example, a two-stage curable thermosetting resin is used.
  • examples of the two-stage curable thermosetting resin include silicone resin, epoxy resin, polyimide resin, phenol resin, urea resin, melamine resin, and unsaturated polyester resin.
  • a two-stage curable silicone resin is used from the viewpoint of translucency and durability.
  • Examples of the two-stage curable silicone resin include a condensation reaction / addition reaction curable silicone resin having two reaction systems of a condensation reaction and an addition reaction.
  • condensation reaction / addition reaction curable silicone resin examples include a first condensation reaction containing a silanol-terminated polysiloxane, an alkenyl group-containing trialkoxysilane, an organohydrogenpolysiloxane, a condensation catalyst, and a hydrosilylation catalyst.
  • Addition reaction curable silicone resin for example, silanol group-terminated polysiloxane (see formula (1) described later), ethylenically unsaturated hydrocarbon group-containing silicon compound (see formula (2) described later), ethylenically unsaturated Second condensation reaction / addition reaction curable silicone resin containing a hydrocarbon group-containing silicon compound (see formula (3) described later), organohydrogenpolysiloxane, condensation catalyst and hydrosilylation catalyst, for example, both-end silanol type Silicone oil, alkenyl group-containing dialkoxya
  • a third condensation reaction / addition reaction curable silicone resin containing a kill silane, an organohydrogenpolysiloxane, a condensation catalyst and a hydrosilylation catalyst for example, an organopolysiloxane having at least two alkenylsilyl groups in one molecule; Fourth polycondensation / addition reaction curable silicone resin containing an organopolysiloxane having at least two hydrosilyl groups in
  • the condensation reaction / addition reaction curable silicone resin is preferably a second condensation reaction / addition reaction curable silicone resin, and specifically described in detail in JP 2010-265436 A, for example.
  • the second condensation reaction / addition reaction curable silicone resin is, for example, an ethylenically unsaturated hydrocarbon group-containing silicon compound and an ethylenically unsaturated hydrocarbon group-containing silicon compound, which are condensation materials, It is prepared by adding a condensation catalyst all at once, then adding an organohydrogenpolysiloxane as an addition raw material, and then adding a hydrosilylation catalyst (addition catalyst).
  • the viscosity of the A-stage two-stage curable resin is, for example, 3000 mPa ⁇ s or more, preferably 5000 mPa ⁇ s or more, and, for example, 20000 mPa ⁇ s or less, preferably 11000 mPa ⁇ s or less.
  • the viscosity of the A-stage two-stage curable resin is measured at a rotational speed of 99 s ⁇ 1 using an E-type cone after adjusting the temperature of the A-stage two-stage curable resin to 25 ° C. The following viscosities are measured by the same method as described above.
  • the blending ratio of the two-stage curable resin is, for example, 30% by mass or more, preferably 40% by mass or more, and more preferably 50% by mass or more with respect to the phosphor-containing curable resin composition (varnish). For example, it is 98 mass% or less, Preferably, it is 95 mass% or less, More preferably, it is 90 mass% or less.
  • the phosphor-containing curable resin composition may contain a filler and / or a solvent, if necessary.
  • the filler examples include organic fine particles such as silicone particles (specifically, including silicone rubber particles), inorganic fine particles such as silica (eg, fumed silica), talc, alumina, aluminum nitride, silicon nitride, and the like. Is mentioned. Further, the average value of the maximum length of the filler (in the case of a spherical shape, the average particle diameter) is, for example, 0.1 ⁇ m or more, preferably 1 ⁇ m or more, and, for example, 200 ⁇ m or less, preferably 100 ⁇ m or less. The filler can be used alone or in combination. The blending ratio of the filler is, for example, 0.1 parts by mass or more, preferably 0.5 parts by mass or more, for example, 70 parts by mass or less, preferably 100 parts by mass of the curable resin. It is 50 parts by mass or less.
  • organic fine particles such as silicone particles (specifically, including silicone rubber particles), inorganic fine particles such as silica (eg, fumed si
  • the solvent examples include aliphatic hydrocarbons such as hexane, aromatic hydrocarbons such as xylene, and siloxanes such as vinylmethyl cyclic siloxane and vinylpolydimethylsiloxane at both ends.
  • the solvent is blended in the phosphor-containing curable resin composition at a blending ratio such that the phosphor-containing curable resin composition has a viscosity described later.
  • a two-stage curable resin, a phosphor, and a filler and / or a filler that are blended as necessary are blended and mixed.
  • each component described above in the mixing container 52 including the stirrer 51 was determined in the determination step S2.
  • Information on the varnish specifically, for example, the blending ratio of the phosphor, the absorption peak wavelength of the phosphor, the average value of the maximum length (average particle diameter in the case of a spherical shape), for example, curing of the A stage Based on the type of resin, viscosity, blending ratio, etc.
  • they are mixed using a stirrer 51.
  • the varnish is prepared as an A-stage phosphor-containing curable resin composition.
  • the viscosity of the varnish at 25 ° C. and 1 atm is, for example, 1,000 mPa ⁇ s or more, preferably 4,000 mPa ⁇ s or more, and, for example, 1,000,000 mPa ⁇ s or less, preferably , 100,000 mPa ⁇ s or less.
  • varnish is applied to the surface of the release sheet 4 as shown in FIG.
  • the release sheet 4 examples include polymer films such as polyethylene films and polyester films (such as PET), for example, ceramic sheets, such as metal foil. Preferably, a polymer film is used. Further, the surface of the release sheet 4 can be subjected to a peeling treatment such as a fluorine treatment. Moreover, the shape of the release sheet 4 is not specifically limited, For example, it is formed in planar view substantially rectangular shape (a strip shape and long shape are included) etc.
  • a coating device such as a dispenser, an applicator, or a slit die coater is used.
  • a dispenser 13 shown in FIG. 5 is used.
  • the varnish is applied to the release sheet 4 so that the thickness of the phosphor sheet 2 is, for example, 10 ⁇ m or more, preferably 50 ⁇ m or more, and, for example, 2000 ⁇ m or less, preferably 1000 ⁇ m or less.
  • the varnish 7 is applied in an appropriate shape such as a substantially rectangular shape (including a strip shape and a long shape), for example, a circular shape in a plan view.
  • the varnishes 7 constituting the above-described shape may be formed at intervals.
  • the varnish 7 is applied to, for example, a release sheet 4 having a substantially rectangular shape (excluding a long shape) in plan view, and a B-stage to be described below is used to form a single-wafer type phosphor sheet 2, Or it can also apply
  • the fluorescent substance sheet 2 is made into a single-wafer
  • the applied varnish 7 is B-staged (semi-cured).
  • the applied varnish 7 is heated.
  • an oven 55 including a heater 54 disposed on the upper side and / or the lower side of the release sheet 4 is used.
  • the heating temperature is, for example, 40 ° C. or higher, preferably 80 ° C. or higher, more preferably 100 ° C. or higher, and for example, 200 ° C. or lower, preferably 150 ° C. or lower, more preferably, 140 ° C. or lower.
  • the heating time is, for example, 1 minute or more, preferably 5 minutes or more, more preferably 10 minutes or more, and for example, 24 hours or less, preferably 1 hour or less, more preferably 0.5 hours. It is as follows.
  • the varnish 7 when the varnish 7 contains a two-stage curable active energy ray-curable resin, the varnish 7 is irradiated with active energy rays. Specifically, the varnish 7 is irradiated with ultraviolet rays using an ultraviolet lamp or the like.
  • the varnish 7 is B-staged (semi-cured) but not C-staged (completely cured), that is, the phosphor sheet 2 before C-staged (completely cured), that is, the B-staged phosphor.
  • a sheet 2 is formed.
  • the B-stage phosphor sheet 2 laminated on the surface of the release sheet 4 is manufactured.
  • the application conditions of the varnish 7 (specifically, the shape and thickness of the varnish 7) determined in the determination step S2, the heating conditions of the varnish 7 in the B-stage, and the active energy ray irradiation conditions Based on the varnish 7, the B-stage phosphor sheet 2 is formed.
  • the compression elastic modulus at 25 ° C. of the phosphor sheet 2 manufactured in the sheet manufacturing step S3 is, for example, 0.040 MPa or more, preferably 0.050 MPa or more, more preferably 0.075 MPa or more, and further preferably, For example, it is 0.145 MPa or less, preferably 0.140 MPa or less, more preferably 0.135 MPa or less, and further preferably 0.125 MPa or less.
  • the compression modulus is less than the lower limit, it is difficult to ensure the shape of the phosphor sheet 2. That is, the varnish 7 may not form the shape of the phosphor sheet 2.
  • the continuous B-stage phosphor sheet 2 can be cut into a predetermined shape together with the continuous release sheet 4 to obtain a single-wafer type phosphor sheet 2.
  • ⁇ C-stage process S7> In the C-stage forming step S7 shown in FIG. 2, as shown in FIGS. 7 and 8, first, the LED 3 is covered with the B-stage phosphor sheet 2, and then the B-stage phosphor sheet 2 is made into the C-stage. To do.
  • a substrate 5 on which the LED 3 is mounted is prepared.
  • the substrate 5 is made of, for example, an insulating substrate such as a silicon substrate, a ceramic substrate, a polyimide resin substrate, or a laminated substrate in which an insulating layer is laminated on a metal substrate.
  • an insulating substrate such as a silicon substrate, a ceramic substrate, a polyimide resin substrate, or a laminated substrate in which an insulating layer is laminated on a metal substrate.
  • a conductor pattern including electrodes (not shown) for electrical connection with terminals (not shown) of the LEDs 3 to be described next and wirings continuous therewith. ) Is formed.
  • the conductor pattern is formed from a conductor such as gold, copper, silver, or nickel.
  • the surface of the substrate 5 is formed flat. Or although not shown in figure, the recessed part dented toward the downward direction may be formed in the surface in which LED3 in the board
  • the outer shape of the substrate 5 is not particularly limited, and examples thereof include a substantially rectangular shape in plan view and a substantially circular shape in plan view.
  • the dimensions of the substrate 5 are appropriately selected.
  • the maximum length is, for example, 2 mm or more, preferably 10 mm or more, and for example, 300 mm or less, preferably 100 mm or less.
  • the LED 3 is an optical semiconductor element that converts electrical energy into light energy, and is formed, for example, in a substantially rectangular shape in cross-sectional view whose thickness is shorter than the length in the plane direction (length in the direction perpendicular to the thickness direction).
  • the LED 3 examples include a blue LED (light emitting diode element) that emits blue light.
  • the dimensions of the LED 3 are appropriately set according to the application and purpose. Specifically, the thickness is, for example, 10 to 1000 ⁇ m, and the maximum length is, for example, 0.05 mm or more, preferably 0.1 mm or more. For example, it is 5 mm or less, preferably 2 mm or less.
  • the emission peak wavelength of the LED 3 is, for example, 400 nm or more, preferably 430 nm or more, and, for example, 500 nm or less, preferably 470 nm or less.
  • the LED 3 is, for example, flip-chip mounted or connected to the substrate 5 by wire bonding.
  • a plurality of LEDs 3 (three in FIG. 7) can be mounted on one substrate 5 as shown in FIG.
  • the number of LEDs 3 mounted on one substrate 5 is, for example, 1 or more, preferably 4 or more, and for example, 2000 or less, preferably 400 or less.
  • the substrate 5 on which the LED 3 is mounted is mounted on the information related to the substrate 5 determined in the determination step S2, for example, the outer shape, dimensions, and surface shape (the presence or absence of a recess) of the substrate 5, for example, the substrate 5.
  • the LED 3 is selected and prepared based on the shape and size of the LED 3, the emission peak wavelength of the LED 3, the number of mounted LEDs 3 per unit area of the substrate 5, the number of mounted LEDs 3 per substrate 5, and the like.
  • the substrate 5 on which the LEDs 3 are mounted is placed on the press machine 20 shown in FIG.
  • a flat plate press machine provided with two flat plates 21 arranged opposite to each other with an interval in the vertical direction is adopted.
  • the board 5 on which the LED 3 is mounted is placed on the lower flat plate 21.
  • the phosphor sheet 2 (see FIG. 6) laminated on the upper surface of the release sheet 4 is turned upside down so as to face the LED 3. That is, the phosphor sheet 2 is arranged so as to face the LED 3.
  • the LED 3 is covered with the phosphor sheet 2. Specifically, the LED 3 is embedded with the phosphor sheet 2.
  • the LED 3 is covered with the phosphor sheet 2 based on the press condition determined in the determination step S2.
  • the phosphor sheet 2 is lowered (pressed down). Specifically, the phosphor sheet 2 is pressed against the substrate 5 on which the LEDs 3 are mounted.
  • the press pressure is, for example, 0.05 MPa or more, preferably 0.1 MPa or more, and for example, 1 MPa or less, preferably 0.5 MPa or less.
  • the LED 3 is covered with the phosphor sheet 2. That is, the LED 3 is embedded in the phosphor sheet 2.
  • the LED 3 is sealed by the phosphor sheet 2.
  • the phosphor sheet 2 is changed to the C stage.
  • the phosphor sheet 2 is converted to the C stage based on the heating condition of the phosphor sheet 2 and the irradiation condition of the active energy ray determined in the determination step S2.
  • the phosphor sheet 2 is heated. Specifically, it is put into the oven while maintaining the pressed state of the phosphor sheet 2 by the flat plate 21. Thereby, the phosphor sheet 2 is heated.
  • the heating temperature is, for example, 80 ° C. or more, preferably 100 ° C. or more, and for example, 200 ° C. or less, preferably 180 ° C. or less.
  • the heating time is, for example, 10 minutes or more, preferably 30 minutes or more, and for example, 10 hours or less, preferably 5 hours or less.
  • the phosphor sheet 2 is C-staged (completely cured) by heating the phosphor sheet 2.
  • the phosphor sheet 2 is irradiated with active energy rays to make the phosphor sheet 2 C-staged (completely cured).
  • the phosphor sheet 2 is irradiated with ultraviolet rays using an ultraviolet lamp or the like.
  • a prototype 6 including the phosphor sheet 2, the LED 3 sealed by the phosphor sheet 2, and the substrate 5 on which the LED 3 is mounted is manufactured as a prototype.
  • FIG. 8 a plurality of (three) LEDs 3 are provided in one prototype 6.
  • release sheet 4 is peeled off from the phosphor sheet 2 as indicated by a virtual line in FIG.
  • the phosphor sheet 2 can be cut into individual pieces corresponding to the respective LEDs 3.
  • ⁇ Evaluation process S8> in order to evaluate the C-stage phosphor sheet 2, for example, the conductor pattern of the substrate 5 of the prototype 6 (specifically, the prototype 6 in which the LED 3 is covered with the phosphor sheet 2) ( A lighting test is performed in which a current is supplied to the LED 3 and the LED 3 emits light.
  • a current is passed through the substrate 5 of the prototype 6, and the color temperature and / or total luminous flux of the light immediately after the current is passed is measured.
  • the measured value of the color temperature of light is recorded as an evaluation of the prototype 6 in the recording step S9 shown in FIG.
  • the prototype conditions and evaluation of the prototype 6 are recorded and stored as information on the past (previous) prototype 6.
  • the determination step S2 is a step performed after the trial production step S1.
  • manufacturing conditions for manufacturing the LED device 1 are determined based on the evaluation of the prototype 6.
  • the manufacturing conditions are determined based on the prototype conditions and evaluation recorded in the prototype process S1.
  • the prototype condition recorded in the recording step S9 becomes the production condition as it is.
  • the target color temperature is, for example, 4600K or more, and, for example, 5500K or less. Further, when the target light color is warm white, the target color temperature is, for example, 3250K or higher, and for example, 3800K or lower.
  • the manufacturing conditions are determined from the prototype condition and evaluation recorded in the recording step S9 so that the target color temperature is obtained. .
  • the trial production conditions are corrected so as to obtain the target color temperature, and the manufacturing conditions are set.
  • information on the varnish, information on the substrate 5, and information on the phosphor sheet 2 are corrected, preferably information on the varnish is corrected, and more preferably, the blending ratio of the phosphor and the shape of the phosphor.
  • the average value of the maximum length of the phosphor, the absorption peak wavelength of the phosphor, etc. are corrected to obtain the manufacturing conditions.
  • the manufacturing process S3 is a process performed after the determination process S2.
  • the manufacturing process S3 is a process of manufacturing the LED device 1 based on the manufacturing conditions determined in the determination process S2.
  • Manufacturing process S3 is provided with varnish preparation process S11, B-stage forming process S12, and C-stage forming process S13, as shown in FIG.
  • the varnish preparation process in the trial production process S1 is performed except that each of the varnish preparation process S11, the B-stage formation process S12, and the C-stage formation process S13 is based on the production conditions determined in the determination process S2.
  • S5, the B-stage forming step S6, and the C-stage forming step S7 are performed in the same manner (FIG. 2).
  • the LED device 1 having the same structure as the prototype 6 is manufactured.
  • the number of LED devices 1 to be mass-produced in the manufacturing process S3 is, for example, 100 or more, preferably 500 or more, more preferably 1000 or more, and for example, 100000 or less.
  • the determination step S2 determines the manufacturing conditions based on the evaluation of the prototype 6 including the phosphor sheet 2 of the C stage.
  • manufacturing process S3 manufactures LED device 1 based on the manufacturing conditions determined at the determination process.
  • the phosphor sheet 2 of the prototype 6 to be evaluated is the C stage. Therefore, in the manufacturing conditions, the phosphor sheet 2 takes into account the variation in optical characteristics due to the above-described C-stage. Specifically, in the manufacturing conditions, a change in the optical characteristics of the phosphor sheet 2 due to deformation such as warpage accompanying curing shrinkage is pre-woven due to staging.
  • the LED device 1 having excellent light emission reliability can be manufactured in the manufacturing step S3.
  • the LED device 1 is manufactured based on the manufacturing conditions determined based on the evaluation of the prototype 6, the LED device 1 can be mass-produced (that is, mass-produced) with excellent accuracy. Therefore, the manufacturing efficiency of the LED device 1 can be sufficiently improved.
  • the trial production process S1 and the determination process S2 are performed before the production process S3 for mass-producing different types of LED devices 1. Further, when the lot of the phosphor and / or the LED 3 is changed in the trial production step S1 and the determination step S2, specifically, the average value of the maximum length of the phosphor, the absorption peak, for each change. This is performed every time the wavelength or the emission peak wavelength of the LED 3 is changed.
  • the LED 3 is first covered with a B-stage phosphor sheet, and then the B-stage phosphor sheet 2 is made into a C-stage.
  • the B-stage phosphor sheet 2 laminated on the release sheet 4 can be made into a C-stage as it is.
  • the amount of warpage accompanying the curing shrinkage of the C-stage phosphor sheet 2 is measured.
  • the amount of warpage is obtained as the difference between the amount of depression in which the central portion of the phosphor sheet 2 is recessed downward and the amount of protrusion in which the peripheral end portion protrudes upward.
  • the LED 3 is covered with the B-stage phosphor sheet 2, and then the B-stage phosphor sheet 2 is C-staged. .
  • the prototype 6 in which the LED 3 is covered with the phosphor sheet 2 and the LED device 1 as an actual product can have the same configuration.
  • the manufacturing conditions of the actual product can be determined based on the evaluation of the prototype 6 having the same configuration as the actual product (LED device 1).
  • the manufacturing conditions can be determined with higher accuracy, and the LED device 1 that is more excellent in light emission reliability can be manufactured.
  • the trial production condition determination step S4 determines the trial production conditions based on the past trial production conditions and evaluation information. For example, as shown in FIG.
  • the manufacturing conditions can be predicted and determined in the determination step S2 shown in FIG. 1 based on the trial production conditions and the evaluations recorded in the recording step S9 without being based on the evaluation information.
  • the trial condition is determined based on past trial conditions and evaluation information.
  • the LED device 1 having excellent light emission reliability can be obtained.
  • the LED 3 is covered with the B-stage phosphor sheet 2, and then the B-stage phosphor sheet 2 is coated.
  • the C stage is used, for example, the coating of the B-stage phosphor sheet 2 on the LED 3 and the C stage can be performed simultaneously.
  • a plurality of LEDs 3 are provided in one LED device 1. However, although not shown, for example, a single LED 3 may be provided.
  • the LED 3 and the LED device 1 are described as examples as the optical semiconductor element and the optical semiconductor device in the present invention, respectively.
  • an LD (laser diode) 3 and a laser diode respectively.
  • the device 1 can also be used.
  • silicone resin composition 100 parts by mass of the silicone resin composition, 20 parts by mass of silicone rubber particles (spherical shape, average particle diameter of 7 ⁇ m), and 10 parts by mass of YAG particles (spherical shape, average particle diameter of 7 ⁇ m) as a yellow phosphor were mixed with an agitator. They were put into a mixing vessel equipped and mixed using a stirrer. Thus, an A stage varnish was prepared. The viscosity of the varnish at 25 ° C. and 1 atm was 20000 mPa ⁇ s.
  • the compression elastic modulus at 25 ° C. of the B-stage sealing sheet immediately after production was measured, it was 0.040 MPa (see Table 1). Specifically, the compression elastic modulus at 25 ° C. was calculated with a precision load measuring machine manufactured by Aiko Engineering.
  • ⁇ C-stage process S7> A substrate on which an LED having a rectangular shape with a thickness of 150 ⁇ m was mounted was prepared (see FIG. 7). The shape, number and dimensions of the LED and substrate are described below.
  • Substrate shape Square shape in plan view Dimensions of substrate: 8 mm on the side, maximum length 11 mm LED shape: square shape in plan view LED dimensions: 0.3 mm on side, maximum length 0.4 mm Number of LEDs mounted: 9 LED density: Number of LEDs mounted per unit area (mm 2 ) of substrate 0.14 / mm 2 : Number of LEDs mounted per board 9 LED emission peak wavelength: 452 nm Then, the board
  • a B-stage sealing sheet was placed in a press machine on which the substrate was installed (see FIG. 7).
  • the LED was sealed with a sealing sheet (see FIG. 8).
  • the sealing sheet was pushed down at room temperature with a flat plate press, and the LED was embedded with the sealing sheet at a pressure of 0.2 MPa. Thus, the LED was sealed with the sealing sheet.
  • the flat sheet pressing the sealing sheet and the substrate was put into an oven, and the sealing sheet was heated at 150 ° C. for 30 minutes to make the sealing sheet C-staged.
  • the number of prototypes was 1.
  • MCPD-9800 manufactured by Otsuka Electronics Co., Ltd.
  • Warpage amount The amount of warpage of the phosphor sheet of the prototype was also measured.
  • the number of LED devices was 1000.
  • Comparative Example 1 ⁇ Evaluation step S8> was performed in the same manner as in Example 1 except that it was performed on the B-stage phosphor sheet before ⁇ C-staging step S7> after ⁇ B-staging step S6>. did.
  • the manufacturing conditions determined in the determination process of Example 1 take into account the variation in color temperature due to the large amount of warpage, whereby the color temperature of the LED device as a product is the target. It was in the range.
  • the manufacturing conditions determined in the determination process of Comparative Example 1 do not consider the variation in color temperature due to the large amount of warpage, and therefore the color temperature of the LED device as a product is a target range. Was outside.
  • An optical semiconductor device manufacturing method is used for manufacturing LED devices and LD devices.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un procédé de fabrication pour un dispositif semi-conducteur optique qui est un procédé de fabrication pour un dispositif semi-conducteur optique qui recouvre un élément semi-conducteur optique par une feuille de luminophore. Le procédé comprend : une étape de prototypage qui consiste à créer et évaluer un prototype ; une étape de détermination qui consiste à, sur la base de l'évaluation du prototype, déterminer des conditions de fabrication pour la fabrication d'un dispositif semi-conducteur optique ; et une étape de fabrication qui consiste à fabriquer le dispositif semi-conducteur optique par, sur la base des conditions de fabrication déterminées dans l'étape de détermination, recouvrement de l'élément semi-conducteur optique par une feuille de luminophore au stade B, et avancement de la feuille de luminophore jusqu'au stade C. L'étape de prototypage comprend : une étape de préparation de vernis qui consiste à préparer un vernis comprenant un luminophore et une résine durcissable ; une étape de stade B qui consiste à former une feuille de luminophore au stade B pour le vernis ; une étape de stade C qui consiste à avancer la feuille de luminophore du stade jusqu'au stade C ; et une étape d'évaluation qui consiste à évaluer la feuille de luminophore au stade C.
PCT/JP2013/083084 2013-03-27 2013-12-10 Procédé de fabrication pour dispositif semi-conducteur optique WO2014155850A1 (fr)

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CN201380072837.0A CN104995755A (zh) 2013-03-27 2013-12-10 光半导体装置的制造方法

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EP3300126B1 (fr) * 2015-08-18 2019-05-22 Jiangsu Cherrity Optronics Co., Ltd Procédé de traitement d'affinement de photoconvertisseur pour coller-encapsuler une del, et système d'équipement d'affinement
JP6593237B2 (ja) 2016-03-22 2019-10-23 豊田合成株式会社 発光素子の製造方法、及び発光装置の製造方法

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