WO2014146830A1 - Module de puissance ayant au moins un composant de puissance - Google Patents

Module de puissance ayant au moins un composant de puissance Download PDF

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Publication number
WO2014146830A1
WO2014146830A1 PCT/EP2014/052610 EP2014052610W WO2014146830A1 WO 2014146830 A1 WO2014146830 A1 WO 2014146830A1 EP 2014052610 W EP2014052610 W EP 2014052610W WO 2014146830 A1 WO2014146830 A1 WO 2014146830A1
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WO
WIPO (PCT)
Prior art keywords
carrying
power
power module
current
power component
Prior art date
Application number
PCT/EP2014/052610
Other languages
German (de)
English (en)
Inventor
Markus Klingler
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2014146830A1 publication Critical patent/WO2014146830A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73213—Layer and strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73221—Strap and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73263—Layer and strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0263—High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/111—Pads for surface mounting, e.g. lay-out
    • H05K1/112—Pads for surface mounting, e.g. lay-out directly combined with via connections
    • H05K1/113—Via provided in pad; Pad over filled via
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0364—Conductor shape
    • H05K2201/0376—Flush conductors, i.e. flush with the surface of the printed circuit
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/09372—Pads and lands
    • H05K2201/09481—Via in pad; Pad over filled via
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/095—Conductive through-holes or vias
    • H05K2201/09563—Metal filled via
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10174—Diode
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227—Other objects, e.g. metallic pieces
    • H05K2201/10416—Metallic blocks or heatsinks completely inserted in a PCB

Definitions

  • the invention relates to a power module having at least one power component according to the preamble of independent claim 1.
  • a power module comprises at least one power device with at least two pads and a printed circuit board comprising at least two embedded current-carrying elements.
  • the power component can be implemented, for example, as a field effect transistor.
  • the embedded current-carrying elements are usually suitable for carrying high currents and / or high powers, furthermore, heat generated by the power device can be dissipated via the two embedded current-carrying elements.
  • the published patent application DE 10 2008 018 841 A1 describes a method for producing a power module, in which at least one semiconductor element is soldered onto at least one high-current circuit board.
  • at least one bus bar is fastened to a frame via the high-current circuit board.
  • the busbar via at least one metal bracket mechanically and electrically with the
  • Semiconductor device comprising a base plate, an insulating substrate on the base plate and a wiring pattern layer on the insulating substrate. At least one semiconductor chip having a surface electrode is mounted on the wiring pattern layer.
  • At least one main connection is via a conductive adhesive layer with at least a surface electrode and the wiring pattern layer.
  • the semiconductor device is surrounded by a molding compound which only spares parts of the main terminals.
  • the power module according to the invention with the features of independent claim 1 has the advantage that at least one power device can be contacted easily and in different ways, so that different circuits, such as a three-phase bridge circuit, which is also referred to as B6 circuit, simple and can be realized directly on the circuit board. Furthermore, the power module according to the invention can advantageously forward high currents and / or heat.
  • the power component can be implemented, for example, as a field effect transistor.
  • Embodiments of the present invention provide a power module comprising at least one power device having at least two pads and a circuit board having at least two embedded current-carrying elements.
  • an embedded current-carrying first element is directly electrically and / or thermally connected to a first connection surface of the power component
  • at least one embedded current-carrying second element is electrically and / or thermally connected directly or indirectly to a second connection surface of the power component.
  • a contact element for example in the form of a bonding wire, can be saved, since the power component is contacted directly on the current-carrying first element.
  • the direct connection and / or contact can advantageously be designed so that it reliably passes on high currents without sacrificing their reliability and without that an additional external contact is required.
  • a heat loss generated by the power component can be transported away from two sides, with which a faster heat dissipation can be implemented. Due to the improved heat dissipation For example, the surface of the power device and thus the layout area or the overall size of the power device can be reduced.
  • a first contact surface of the at least one embedded current-carrying first element can be made larger than the first connection surface of the power component.
  • a large amount of heat can be reliably removed.
  • a second contact surface of the at least one embedded current-carrying second element can be connected via a connection element to the second connection surface of the power component.
  • the connection element can be designed, for example, as a contact clip.
  • a large number of different connection possibilities between the current-carrying second element and the second connection surface can be specified by the connection element, one of which can be selected and implemented.
  • the contacting of the corresponding pad can be adapted in an advantageous manner to external conditions or to the function of the power device.
  • the gate terminal of the field-effect transistor can be electrically contacted via the terminal element designed as a contact clip and electrically connected to further modules.
  • the embedded current-carrying first element and / or the embedded current-carrying second element can be designed as a copper inlay.
  • copper has very good electrical and thermal conductivities.
  • copper inlays can advantageously be easily introduced into the printed circuit board and produced inexpensively.
  • the first contact surface and / or the second contact surface may terminate planar with a printed circuit board surface.
  • a contacting of the power device can be facilitated in a continuous planar surface.
  • the power device may also rest only partially on the first contact surface and partially rest on the Leitplattenober Design.
  • At least the power component can be surrounded by a molding compound.
  • a molding compound can advantageously protect the power component from external influences.
  • a molding compound can encapsulate the power device and protect other elements, such as the contact areas and / or parts of the circuit board surface.
  • Advantageously, can be dispensed with by the molding compound on a protective housing.
  • the molding compound can advantageously be subsequently applied after the contacting and / or after the assembly of the circuit board to save material on the areas which require a protective molding compound.
  • the power component can be designed as a semiconductor chip. By contacting the heat generated by the semiconductor chip can be forwarded in an advantageous manner, further, the required control or power currents can be easily supplied.
  • At least one heat sink can be thermally coupled to the printed circuit board and / or to the at least one embedded current-carrying first element and / or to the at least one embedded current-carrying second element.
  • the heat sink increases the absorbable thermal energy which may be conducted away from the power device via the first and / or second elements.
  • the efficiency of the power module can be increased by means of a heat sink, since the heat generated by the power component is dissipated to the heat sink. can be given, so that other heat-sensitive components are not damaged.
  • an insulating layer can electrically insulate the heat sink from the printed circuit board and the at least one embedded current-carrying first element and the at least one embedded current-carrying second element and the power component.
  • the insulation layer can prevent short circuits and / or interfering magnetic fields. An insulation between see the heat sink and the current-carrying elements or the power device can be achieved, for example, that the heat sink is disposed on an insulating layer of the circuit board, so that between the first and / or the second element and / or a conductive layer of the circuit board and the heat sink is an insulation layer.
  • thermal interface material TIM
  • a TIM usually has a reduced contact resistance between a metal, such as a thermal contact surface of the first and / or the second element and the heat sink.
  • the heat sink may be on the
  • TIM can be arranged and the TIM can be directly or indirectly thermally coupled to the current-carrying elements.
  • Fig. 1 shows a schematic cross section of a first embodiment of a power module according to the invention.
  • FIG. 2 shows a schematic cross section of a second embodiment of a power module according to the invention.
  • 3 shows a schematic cross section of a third exemplary embodiment of a power module according to the invention.
  • FIG. 4 shows a schematic cross section of a fourth exemplary embodiment of a power module according to the invention.
  • the illustrated exemplary embodiments of a power module 1 a, 1 b, 1 c, 1 d according to the invention comprise at least one
  • Power component 10 having at least two pads 12.1, 12.2 and a circuit board 20, which has at least two embedded current-carrying elements 26.1, 26.2.
  • the power component 10 is designed in the illustrated embodiments as a field effect transistor.
  • At least one embedded current-carrying first element 26. 1 is directly electrically and / or thermally connected to a first connection surface 12. 1 of the power component 10, and at least one embedded current-carrying second element 26. 2 is directly or indirectly electrically and / or thermally connected to a second connection surface 12. 2 of the power component 10 connected.
  • the current-carrying first element 26. 1 and the current-carrying second element 26. 2 are embedded in insulating layers 22 of the printed circuit board 20. Furthermore, the current-carrying elements 26.1,
  • a first contact surface 26.3 of the embedded current-carrying first element 26.1 is larger than the first connection surface 12.1 of the power component 10.
  • the direct connection between the current-carrying first element 26.1 and the power component 10 saves a connecting element.
  • the functional reliability of the power module 1 a, 1 b, 1 c, 1 d is increased by the direct connection. Due to the different sizes of the contact surface 26.3 and the pad 12.1, the thermal connection can be improved.
  • a second contact surface 26. 4 of the embedded current-carrying second element 26. 2 is connected to the second connection surface 12. 2 of the power component 10 via a connection element 28.
  • This Connecting element 28 is designed as a contact clip in the illustrated embodiments. Due to the contacting of the power component 10 on both sides, a heat generated by the power component can be transported away faster, furthermore, a larger current can be transferred to that of the power component 10, as in a one-sided contacting.
  • the power device 10 may be implemented as a semiconductor chip.
  • the first contact surface 26. 3 of the first element 26. 1 and the second contact surface 26. 4 of the second element terminate planarly with a printed circuit board surface 21.
  • at least one contact surface can not terminate planar with the circuit board surface and be arranged, for example, in a recess of the circuit board.
  • at least one contact surface protrudes from the printed circuit board.
  • the power component 10 is surrounded by a molding compound 30.
  • the molding compound 30 also surrounds areas of the contact surfaces 26.3, 26.4 and regions of the connection element 28.
  • the molding compound 30 encapsulates the power component 10 as well as the electrical and thermal contact areas.
  • At least one heat sink 40 is thermally coupled to the circuit board 20 and / or to the at least one embedded current-carrying first element 26. 1 and / or to the at least one embedded current-carrying second element 26.
  • the heat sink 40 is thermally coupled to the power device 10 indirectly via the first element 26.1 and the second element 26.2.
  • the heat sink 40 is disposed on a surface of the circuit board 20 opposite to the circuit board surface 21 on which the power device 10 is disposed. Furthermore, an insulation layer
  • the printed circuit board 20 has additional current-carrying layers 24 which run on the printed circuit board surface 21 or which are embedded in the guide plate 20.
  • the current-carrying layers 24 are separated by insulating layers 22 from each other and from the embedded elements 26.1, 26.2.
  • the first exemplary embodiment has an additional electrical contact 29.1, which connects the current-carrying layer 24, which runs on the circuit board surface 21, to the second connection surface 12.2 of the power component 20.
  • the additional electrical contact 29.1 is in this case designed as a so-called solder clip gate.
  • a so-called slug-down method can be used to electrically and thermally contact the power device 20.
  • an electrically insulating layer 42.1 is arranged between the heat sink 40 and the current-carrying elements 26.1, 26.2. This electrically insulating layer 42.1 can be designed as a so-called thermal interface material (TIM).
  • the second exemplary embodiment of a power module 1b illustrated in FIG. 2 differs from the first exemplary embodiment of a power module 1a shown in FIG. 1 in that the electrically insulating layer 22.1 between the heat sink 40 and the current-carrying elements 26.1, 26.2 is thereby implemented in that the current-carrying elements 26.1, 26.2 are surrounded by the surface of insulating printed circuit board material that is joined to the heat sink 40.
  • an electrically conductive thermal interface material 42.2 is arranged, on which the heat sink 40 is arranged.
  • the thermal interface material 42.2 can also be designed as electrically insulating thermal interface material 42.1.
  • the third exemplary embodiment of a power module 1c shown in FIG. 3 differs from the second exemplary embodiment of a power module 1b shown in FIG. 2 in that, on the electrically insulating layer 22.1 between the current-carrying elements 26.1, 26.2 and the thermal interface, material 42.1, 42.2 a solderable metal 24.1 is arranged. at According to this arrangement, a soldering method can be used to connect the heat sink 40 to the power module 1 c.
  • the illustrated in Fig. 4 fourth embodiment of a power module 1 d differs from that shown in Fig. 1 to 3 embodiments of a power module 1 a, 1 b, 1 c characterized in that the power module 1 d has an additional electrical contact 29.2, which the on the circuit board surface 21 extending current-carrying layer 24 with the first connection surface 12.1 of the power device 20 connects.
  • the power component 20 is placed on the first contact surface 26.3 and on the current-carrying layer 24.
  • the fourth exemplary embodiment has an additional heat sink 40. 1, which is thermally coupled to the connection element 28.
  • the additional heat sink 40.1 can also be implemented in the other exemplary embodiments and enables effective two-sided cooling of the power component 20.
  • Embodiments of the present invention have provided a power module having a power chip which may be implemented as a so-called B6 circuit or a three-phase bridge circuit and which is applied to a high-current circuit board.
  • a power chip For contacting the power chip is applied with a surface directly on a current-carrying element of a high-current circuit board and another surface is contacted via a contact bar, which is connected to a second current-carrying element.
  • the contacted power chip is then ummoldet together with the contact bracket.
  • the current-carrying elements are connected to a heat sink and / or a heat sink. Another heat sink may be provided on the contact clip.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Geometry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention concerne un module de puissance (1a) équipé d'au moins un composant de puissance (10), qui comprend au moins deux surfaces de connexion (12.1, 12.2), et d'une carte de circuit imprimé (20) qui comprend au moins deux éléments électroconducteurs intégrés (26.1, 26.2). Selon la présente invention, au moins un premier élément électroconducteur intégré (26.1) est relié directement électriquement et/ou thermiquement à une première surface de connexion (12.1) dudit au moins un composant de puissance (10), et au moins un deuxième élément électroconducteur intégré (26.2) est relié directement électriquement et/ou thermiquement à une deuxième surface de connexion (12.2) du composant de puissance (10).
PCT/EP2014/052610 2013-03-20 2014-02-11 Module de puissance ayant au moins un composant de puissance WO2014146830A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE201310204889 DE102013204889A1 (de) 2013-03-20 2013-03-20 Leistungsmodul mit mindestens einem Leistungsbauelement
DE102013204889.0 2013-03-20

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WO2014146830A1 true WO2014146830A1 (fr) 2014-09-25

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US10433414B2 (en) 2010-12-24 2019-10-01 Rayben Technologies (HK) Limited Manufacturing method of printing circuit board with micro-radiators
CN205491419U (zh) * 2015-09-22 2016-08-17 乐健集团有限公司 印刷电路板及led光源模组
DE102016004508A1 (de) 2016-04-13 2017-10-19 Audi Ag Leiterplatte und Kraftfahrzeug
DE102018127075B4 (de) * 2018-10-30 2021-12-30 Auto-Kabel Management Gmbh Hochstromschaltung

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US20010048156A1 (en) * 2000-06-05 2001-12-06 Nec Corporation. Semiconductor device and method of manufacturing the same
DE10329267A1 (de) * 2003-06-30 2005-01-27 Robert Bosch Gmbh Schaltungsanordnung mit Wärmeleitkörper
DE102005057401A1 (de) * 2005-11-30 2007-05-31 Infineon Technologies Ag Halbleiterbauteil und Verfahren zu dessen Herstellung
US20080029906A1 (en) * 2006-08-07 2008-02-07 Infineon Technologies Ag Semiconductor switching module and method
DE102008062514A1 (de) * 2007-12-24 2009-06-25 Denso Corporation, Kariya Halbleitermodul-Montagekonstruktion

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JP2007235004A (ja) 2006-03-03 2007-09-13 Mitsubishi Electric Corp 半導体装置
DE102008018841A1 (de) 2008-04-15 2009-10-22 Conti Temic Microelectronic Gmbh Verfahren zur Herstellung und Aufbau eines Leistungsmoduls

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US20010048156A1 (en) * 2000-06-05 2001-12-06 Nec Corporation. Semiconductor device and method of manufacturing the same
DE10329267A1 (de) * 2003-06-30 2005-01-27 Robert Bosch Gmbh Schaltungsanordnung mit Wärmeleitkörper
DE102005057401A1 (de) * 2005-11-30 2007-05-31 Infineon Technologies Ag Halbleiterbauteil und Verfahren zu dessen Herstellung
US20080029906A1 (en) * 2006-08-07 2008-02-07 Infineon Technologies Ag Semiconductor switching module and method
DE102008062514A1 (de) * 2007-12-24 2009-06-25 Denso Corporation, Kariya Halbleitermodul-Montagekonstruktion

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