WO2014146830A1 - Power module with at least one power component - Google Patents

Power module with at least one power component Download PDF

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Publication number
WO2014146830A1
WO2014146830A1 PCT/EP2014/052610 EP2014052610W WO2014146830A1 WO 2014146830 A1 WO2014146830 A1 WO 2014146830A1 EP 2014052610 W EP2014052610 W EP 2014052610W WO 2014146830 A1 WO2014146830 A1 WO 2014146830A1
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WO
WIPO (PCT)
Prior art keywords
carrying
power
power module
current
power component
Prior art date
Application number
PCT/EP2014/052610
Other languages
German (de)
French (fr)
Inventor
Markus Klingler
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2014146830A1 publication Critical patent/WO2014146830A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73213—Layer and strap connectors
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73221—Strap and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73263—Layer and strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0263—High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/111—Pads for surface mounting, e.g. lay-out
    • H05K1/112—Pads for surface mounting, e.g. lay-out directly combined with via connections
    • H05K1/113—Via provided in pad; Pad over filled via
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0364—Conductor shape
    • H05K2201/0376—Flush conductors, i.e. flush with the surface of the printed circuit
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/09372—Pads and lands
    • H05K2201/09481—Via in pad; Pad over filled via
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/095—Conductive through-holes or vias
    • H05K2201/09563—Metal filled via
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10174—Diode
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227—Other objects, e.g. metallic pieces
    • H05K2201/10416—Metallic blocks or heatsinks completely inserted in a PCB

Definitions

  • the invention relates to a power module having at least one power component according to the preamble of independent claim 1.
  • a power module comprises at least one power device with at least two pads and a printed circuit board comprising at least two embedded current-carrying elements.
  • the power component can be implemented, for example, as a field effect transistor.
  • the embedded current-carrying elements are usually suitable for carrying high currents and / or high powers, furthermore, heat generated by the power device can be dissipated via the two embedded current-carrying elements.
  • the published patent application DE 10 2008 018 841 A1 describes a method for producing a power module, in which at least one semiconductor element is soldered onto at least one high-current circuit board.
  • at least one bus bar is fastened to a frame via the high-current circuit board.
  • the busbar via at least one metal bracket mechanically and electrically with the
  • Semiconductor device comprising a base plate, an insulating substrate on the base plate and a wiring pattern layer on the insulating substrate. At least one semiconductor chip having a surface electrode is mounted on the wiring pattern layer.
  • At least one main connection is via a conductive adhesive layer with at least a surface electrode and the wiring pattern layer.
  • the semiconductor device is surrounded by a molding compound which only spares parts of the main terminals.
  • the power module according to the invention with the features of independent claim 1 has the advantage that at least one power device can be contacted easily and in different ways, so that different circuits, such as a three-phase bridge circuit, which is also referred to as B6 circuit, simple and can be realized directly on the circuit board. Furthermore, the power module according to the invention can advantageously forward high currents and / or heat.
  • the power component can be implemented, for example, as a field effect transistor.
  • Embodiments of the present invention provide a power module comprising at least one power device having at least two pads and a circuit board having at least two embedded current-carrying elements.
  • an embedded current-carrying first element is directly electrically and / or thermally connected to a first connection surface of the power component
  • at least one embedded current-carrying second element is electrically and / or thermally connected directly or indirectly to a second connection surface of the power component.
  • a contact element for example in the form of a bonding wire, can be saved, since the power component is contacted directly on the current-carrying first element.
  • the direct connection and / or contact can advantageously be designed so that it reliably passes on high currents without sacrificing their reliability and without that an additional external contact is required.
  • a heat loss generated by the power component can be transported away from two sides, with which a faster heat dissipation can be implemented. Due to the improved heat dissipation For example, the surface of the power device and thus the layout area or the overall size of the power device can be reduced.
  • a first contact surface of the at least one embedded current-carrying first element can be made larger than the first connection surface of the power component.
  • a large amount of heat can be reliably removed.
  • a second contact surface of the at least one embedded current-carrying second element can be connected via a connection element to the second connection surface of the power component.
  • the connection element can be designed, for example, as a contact clip.
  • a large number of different connection possibilities between the current-carrying second element and the second connection surface can be specified by the connection element, one of which can be selected and implemented.
  • the contacting of the corresponding pad can be adapted in an advantageous manner to external conditions or to the function of the power device.
  • the gate terminal of the field-effect transistor can be electrically contacted via the terminal element designed as a contact clip and electrically connected to further modules.
  • the embedded current-carrying first element and / or the embedded current-carrying second element can be designed as a copper inlay.
  • copper has very good electrical and thermal conductivities.
  • copper inlays can advantageously be easily introduced into the printed circuit board and produced inexpensively.
  • the first contact surface and / or the second contact surface may terminate planar with a printed circuit board surface.
  • a contacting of the power device can be facilitated in a continuous planar surface.
  • the power device may also rest only partially on the first contact surface and partially rest on the Leitplattenober Design.
  • At least the power component can be surrounded by a molding compound.
  • a molding compound can advantageously protect the power component from external influences.
  • a molding compound can encapsulate the power device and protect other elements, such as the contact areas and / or parts of the circuit board surface.
  • Advantageously, can be dispensed with by the molding compound on a protective housing.
  • the molding compound can advantageously be subsequently applied after the contacting and / or after the assembly of the circuit board to save material on the areas which require a protective molding compound.
  • the power component can be designed as a semiconductor chip. By contacting the heat generated by the semiconductor chip can be forwarded in an advantageous manner, further, the required control or power currents can be easily supplied.
  • At least one heat sink can be thermally coupled to the printed circuit board and / or to the at least one embedded current-carrying first element and / or to the at least one embedded current-carrying second element.
  • the heat sink increases the absorbable thermal energy which may be conducted away from the power device via the first and / or second elements.
  • the efficiency of the power module can be increased by means of a heat sink, since the heat generated by the power component is dissipated to the heat sink. can be given, so that other heat-sensitive components are not damaged.
  • an insulating layer can electrically insulate the heat sink from the printed circuit board and the at least one embedded current-carrying first element and the at least one embedded current-carrying second element and the power component.
  • the insulation layer can prevent short circuits and / or interfering magnetic fields. An insulation between see the heat sink and the current-carrying elements or the power device can be achieved, for example, that the heat sink is disposed on an insulating layer of the circuit board, so that between the first and / or the second element and / or a conductive layer of the circuit board and the heat sink is an insulation layer.
  • thermal interface material TIM
  • a TIM usually has a reduced contact resistance between a metal, such as a thermal contact surface of the first and / or the second element and the heat sink.
  • the heat sink may be on the
  • TIM can be arranged and the TIM can be directly or indirectly thermally coupled to the current-carrying elements.
  • Fig. 1 shows a schematic cross section of a first embodiment of a power module according to the invention.
  • FIG. 2 shows a schematic cross section of a second embodiment of a power module according to the invention.
  • 3 shows a schematic cross section of a third exemplary embodiment of a power module according to the invention.
  • FIG. 4 shows a schematic cross section of a fourth exemplary embodiment of a power module according to the invention.
  • the illustrated exemplary embodiments of a power module 1 a, 1 b, 1 c, 1 d according to the invention comprise at least one
  • Power component 10 having at least two pads 12.1, 12.2 and a circuit board 20, which has at least two embedded current-carrying elements 26.1, 26.2.
  • the power component 10 is designed in the illustrated embodiments as a field effect transistor.
  • At least one embedded current-carrying first element 26. 1 is directly electrically and / or thermally connected to a first connection surface 12. 1 of the power component 10, and at least one embedded current-carrying second element 26. 2 is directly or indirectly electrically and / or thermally connected to a second connection surface 12. 2 of the power component 10 connected.
  • the current-carrying first element 26. 1 and the current-carrying second element 26. 2 are embedded in insulating layers 22 of the printed circuit board 20. Furthermore, the current-carrying elements 26.1,
  • a first contact surface 26.3 of the embedded current-carrying first element 26.1 is larger than the first connection surface 12.1 of the power component 10.
  • the direct connection between the current-carrying first element 26.1 and the power component 10 saves a connecting element.
  • the functional reliability of the power module 1 a, 1 b, 1 c, 1 d is increased by the direct connection. Due to the different sizes of the contact surface 26.3 and the pad 12.1, the thermal connection can be improved.
  • a second contact surface 26. 4 of the embedded current-carrying second element 26. 2 is connected to the second connection surface 12. 2 of the power component 10 via a connection element 28.
  • This Connecting element 28 is designed as a contact clip in the illustrated embodiments. Due to the contacting of the power component 10 on both sides, a heat generated by the power component can be transported away faster, furthermore, a larger current can be transferred to that of the power component 10, as in a one-sided contacting.
  • the power device 10 may be implemented as a semiconductor chip.
  • the first contact surface 26. 3 of the first element 26. 1 and the second contact surface 26. 4 of the second element terminate planarly with a printed circuit board surface 21.
  • at least one contact surface can not terminate planar with the circuit board surface and be arranged, for example, in a recess of the circuit board.
  • at least one contact surface protrudes from the printed circuit board.
  • the power component 10 is surrounded by a molding compound 30.
  • the molding compound 30 also surrounds areas of the contact surfaces 26.3, 26.4 and regions of the connection element 28.
  • the molding compound 30 encapsulates the power component 10 as well as the electrical and thermal contact areas.
  • At least one heat sink 40 is thermally coupled to the circuit board 20 and / or to the at least one embedded current-carrying first element 26. 1 and / or to the at least one embedded current-carrying second element 26.
  • the heat sink 40 is thermally coupled to the power device 10 indirectly via the first element 26.1 and the second element 26.2.
  • the heat sink 40 is disposed on a surface of the circuit board 20 opposite to the circuit board surface 21 on which the power device 10 is disposed. Furthermore, an insulation layer
  • the printed circuit board 20 has additional current-carrying layers 24 which run on the printed circuit board surface 21 or which are embedded in the guide plate 20.
  • the current-carrying layers 24 are separated by insulating layers 22 from each other and from the embedded elements 26.1, 26.2.
  • the first exemplary embodiment has an additional electrical contact 29.1, which connects the current-carrying layer 24, which runs on the circuit board surface 21, to the second connection surface 12.2 of the power component 20.
  • the additional electrical contact 29.1 is in this case designed as a so-called solder clip gate.
  • a so-called slug-down method can be used to electrically and thermally contact the power device 20.
  • an electrically insulating layer 42.1 is arranged between the heat sink 40 and the current-carrying elements 26.1, 26.2. This electrically insulating layer 42.1 can be designed as a so-called thermal interface material (TIM).
  • the second exemplary embodiment of a power module 1b illustrated in FIG. 2 differs from the first exemplary embodiment of a power module 1a shown in FIG. 1 in that the electrically insulating layer 22.1 between the heat sink 40 and the current-carrying elements 26.1, 26.2 is thereby implemented in that the current-carrying elements 26.1, 26.2 are surrounded by the surface of insulating printed circuit board material that is joined to the heat sink 40.
  • an electrically conductive thermal interface material 42.2 is arranged, on which the heat sink 40 is arranged.
  • the thermal interface material 42.2 can also be designed as electrically insulating thermal interface material 42.1.
  • the third exemplary embodiment of a power module 1c shown in FIG. 3 differs from the second exemplary embodiment of a power module 1b shown in FIG. 2 in that, on the electrically insulating layer 22.1 between the current-carrying elements 26.1, 26.2 and the thermal interface, material 42.1, 42.2 a solderable metal 24.1 is arranged. at According to this arrangement, a soldering method can be used to connect the heat sink 40 to the power module 1 c.
  • the illustrated in Fig. 4 fourth embodiment of a power module 1 d differs from that shown in Fig. 1 to 3 embodiments of a power module 1 a, 1 b, 1 c characterized in that the power module 1 d has an additional electrical contact 29.2, which the on the circuit board surface 21 extending current-carrying layer 24 with the first connection surface 12.1 of the power device 20 connects.
  • the power component 20 is placed on the first contact surface 26.3 and on the current-carrying layer 24.
  • the fourth exemplary embodiment has an additional heat sink 40. 1, which is thermally coupled to the connection element 28.
  • the additional heat sink 40.1 can also be implemented in the other exemplary embodiments and enables effective two-sided cooling of the power component 20.
  • Embodiments of the present invention have provided a power module having a power chip which may be implemented as a so-called B6 circuit or a three-phase bridge circuit and which is applied to a high-current circuit board.
  • a power chip For contacting the power chip is applied with a surface directly on a current-carrying element of a high-current circuit board and another surface is contacted via a contact bar, which is connected to a second current-carrying element.
  • the contacted power chip is then ummoldet together with the contact bracket.
  • the current-carrying elements are connected to a heat sink and / or a heat sink. Another heat sink may be provided on the contact clip.

Abstract

The invention relates to a power module (1a) with at least one power component (10) which comprises at least two pads (12.1, 12.2), and with a printed-circuit board (20) which comprises at least two embedded live elements (26.1, 26.2). According to the invention, at least one first embedded live element (26.1) is directly connected to a first pad (12.1) of the at least one power component (10) electrically and/or thermally, and at least one second embedded live element (26.2) is directly or indirectly connected to a second pad (12.2) of the power component (10) electrically and/or thermally.

Description

Beschreibung Titel  Description title
Leistungsmodul mit mindestens einem Leistungsbauelement Stand der Technik  Power module with at least one power component prior art
Die Erfindung geht aus von einem Leistungsmodul mit mindestens einem Leistungsbauelement nach der Gattung des unabhängigen Patentanspruchs 1 . The invention relates to a power module having at least one power component according to the preamble of independent claim 1.
Üblicherweise umfasst ein Leistungsmodul mindestens ein Leistungsbauelement mit mindestens zwei Anschlussflächen und eine Leiterplatte, welche mindestens zwei eingebettete stromführende Elemente umfasst. Das Leistungsbauelement kann beispielsweise als Feldeffekttransistor ausgeführt werden. Die eingebetteten stromführenden Elemente sind üblicherweise dazu geeignet hohe Ströme und/oder hohe Leistungen zu tragen, des Weiteren kann Wärme, welche von dem Leistungsbauelement erzeugt wird über die beiden eingebetteten stromführenden Elemente abgeleitet werden. Typically, a power module comprises at least one power device with at least two pads and a printed circuit board comprising at least two embedded current-carrying elements. The power component can be implemented, for example, as a field effect transistor. The embedded current-carrying elements are usually suitable for carrying high currents and / or high powers, furthermore, heat generated by the power device can be dissipated via the two embedded current-carrying elements.
In der Offenlegungsschrift DE 10 2008 018 841 A1 wird ein Verfahren zur Herstellung eines Leistungsmoduls beschrieben, bei dem mindestens ein Halbleiterelement auf mindestens eine Hochstromleiterplatte gelötet wird. In einem Verfahrensschritt wird über der Hochstromleiterplatte mindestens eine Stromschiene an einem Rahmen befestigt. Hierbei wird die Stromschiene über mindestens einen Metallbügel mechanisch und elektrisch mit der The published patent application DE 10 2008 018 841 A1 describes a method for producing a power module, in which at least one semiconductor element is soldered onto at least one high-current circuit board. In a method step, at least one bus bar is fastened to a frame via the high-current circuit board. Here, the busbar via at least one metal bracket mechanically and electrically with the
Hochstromleiterplatte verbunden. High current circuit board connected.
In der Offenlegungsschrift DE 10 2006 051 454 A1 wird eine In the published patent application DE 10 2006 051 454 A1 a
Halbleitervorrichtung beschrieben, welche eine Grundplatte, ein isolierendes Substrat auf der Grundplatte und eine Verdrahtungsmusterschicht auf dem isolierenden Substrat umfasst. Auf der Verdrahtungsmusterschicht ist mindestens ein Halbleiterchip mit einer Oberflächenelektrode befestigt. Semiconductor device comprising a base plate, an insulating substrate on the base plate and a wiring pattern layer on the insulating substrate. At least one semiconductor chip having a surface electrode is mounted on the wiring pattern layer.
Mindestens ein Hauptanschluss ist über eine leitende Haftschicht mit mindestens einer Oberflächenelektrode und der Verdrahtungsmusterschicht verbunden. Die Halbleitervorrichtung ist von einer Moldmasse umgeben, welche lediglich Teile der Hauptanschlüsse ausspart. At least one main connection is via a conductive adhesive layer with at least a surface electrode and the wiring pattern layer. The semiconductor device is surrounded by a molding compound which only spares parts of the main terminals.
Offenbarung der Erfindung Disclosure of the invention
Das erfindungsgemäße Leistungsmodul mit den Merkmalen des unabhängigen Patentanspruchs 1 hat demgegenüber den Vorteil, dass mindestens ein Leistungsbauelement einfach und auf verschiedene Weisen kontaktiert werden kann, so dass unterschiedliche Schaltungen, wie beispielsweise eine Dreiphasenbrü- ckenschaltung, die auch als B6-Schaltung bezeichnet wird, einfach und direkt auf der Leiterplatte realisiert werden können. Des Weiteren kann das erfindungsgemäße Leistungsmodul in vorteilhafter Weise hohe Ströme und/oder Wärme weiterleiten. Das Leistungsbauelement kann beispielsweise als Feldeffekttransistor ausgeführt werden. The power module according to the invention with the features of independent claim 1 has the advantage that at least one power device can be contacted easily and in different ways, so that different circuits, such as a three-phase bridge circuit, which is also referred to as B6 circuit, simple and can be realized directly on the circuit board. Furthermore, the power module according to the invention can advantageously forward high currents and / or heat. The power component can be implemented, for example, as a field effect transistor.
Ausführungsformen der vorliegenden Erfindung stellen ein Leistungsmodul zur Verfügung, welches mindestens ein Leistungsbauelement mit mindestens zwei Anschlussflächen und eine Leiterplatte umfasst, welche mindestens zwei eingebettete stromführende Elemente aufweist. Erfindungsgemäß ist ein eingebettetes stromführendes erstes Element mit einer ersten Anschlussfläche des Leistungsbauelements direkt elektrisch und/oder thermisch verbunden und mindestens ein eingebettetes stromführendes zweites Element ist mit einer zweiten Anschlussfläche des Leistungsbauelements direkt oder indirekt elektrisch und/oder thermisch verbunden. Durch eine beidseitige Kontaktierung des Leistungsbauelements, kann in vorteilhafter Weise ein größerer Strom auf das Leistungsbauelement übertagen werden, als bei einer einseitigen Kontaktierung. Des Weiteren kann in vorteilhafter Weise ein Kontaktelement beispielsweise in Form eines Bonddrahtes eingespart werden, da das Leistungsbauelement direkt auf dem stromführenden ersten Element kontaktiert ist. Des Weiteren kann die direkte Verbindung und/oder Kontaktierung in vorteilhafter Weise so gestaltet werden, dass sie hohe Ströme zuverlässig weiterleitet ohne ihre Funktionssicherheit einzubüßen und ohne, dass eine zusätzliche Außenkontaktierung erforderlich ist. Des Weiteren kann in vorteilhafter Weise eine vom Leistungsbauelement erzeugte Verlustwärme von zwei Seiten abtransportiert werden, womit eine schnellere Wärmeabfuhr umgesetzt werden kann. Durch die verbesserte Wärmeabfuhr kann die Oberfläche des Leistungsbauelements und somit die Layoutfläche bzw. die Gesamtgröße des Leistungsbauelements verkleinert werden. Embodiments of the present invention provide a power module comprising at least one power device having at least two pads and a circuit board having at least two embedded current-carrying elements. According to the invention, an embedded current-carrying first element is directly electrically and / or thermally connected to a first connection surface of the power component, and at least one embedded current-carrying second element is electrically and / or thermally connected directly or indirectly to a second connection surface of the power component. By a two-sided contacting of the power device, a larger current can be transferred to the power device advantageously, as in a one-sided contact. Furthermore, advantageously, a contact element, for example in the form of a bonding wire, can be saved, since the power component is contacted directly on the current-carrying first element. Furthermore, the direct connection and / or contact can advantageously be designed so that it reliably passes on high currents without sacrificing their reliability and without that an additional external contact is required. Furthermore, advantageously, a heat loss generated by the power component can be transported away from two sides, with which a faster heat dissipation can be implemented. Due to the improved heat dissipation For example, the surface of the power device and thus the layout area or the overall size of the power device can be reduced.
Durch die in den abhängigen Ansprüchen aufgeführten Maßnahmen und Weiterbildungen sind vorteilhafte Verbesserungen des im unabhängigen Patentanspruch 1 angegebenen Leistungsmoduls möglich. The measures and refinements recited in the dependent claims advantageous improvements of the independent claim 1 power module are possible.
In vorteilhafter Ausgestaltung des erfindungsgemäßen Leistungsmoduls kann eine erste Kontaktfläche des mindestens einen eingebetteten stromführenden ersten Elements größer ausgeführt werden als die erste Anschlussfläche des Leistungsbauelements. In vorteilhafter Weise kann bei diesem Aufbau eine große Wärmemenge zuverlässig abtransportiert werden. In an advantageous embodiment of the power module according to the invention, a first contact surface of the at least one embedded current-carrying first element can be made larger than the first connection surface of the power component. Advantageously, in this structure, a large amount of heat can be reliably removed.
In weiterer vorteilhafter Ausgestaltung des erfindungsgemäßen Leistungsmoduls kann eine zweite Kontaktfläche des mindestens einen eingebetteten stromführenden zweiten Elements über ein Anschlusselement mit der zweiten Anschlussfläche des Leistungsbauelements verbunden werden. Das Anschlusselement kann beispielsweise als Kontaktbügel ausgeführt werden. In vorteilhafter Weise kann durch das Anschlusselement eine große Anzahl von verschiedenen Verbindungsmöglichkeiten zwischen dem stromführenden zweiten Element und der zweiten Anschlussfläche angegeben werden, von welchen eine ausgewählt und umgesetzt werden kann. Dadurch kann die Kontaktierung der korrespondierenden Anschlussfläche in vorteilhafter Weise an äußere Gegebenheiten oder an die Funktion des Leistungsbauelements angepasst werden. Bei der Ausführung des Leistungsbauelements als Feldeffekttransistor, kann über das als Kontaktbügel ausgeführte Anschlusselement beispielsweise der Gateanschluss des Feldeffekttransistors elektrisch kontaktiert und mit weiteren Baugruppen elektrisch verbunden werden. In a further advantageous embodiment of the power module according to the invention, a second contact surface of the at least one embedded current-carrying second element can be connected via a connection element to the second connection surface of the power component. The connection element can be designed, for example, as a contact clip. Advantageously, a large number of different connection possibilities between the current-carrying second element and the second connection surface can be specified by the connection element, one of which can be selected and implemented. Thereby, the contacting of the corresponding pad can be adapted in an advantageous manner to external conditions or to the function of the power device. In the embodiment of the power component as a field-effect transistor, the gate terminal of the field-effect transistor can be electrically contacted via the terminal element designed as a contact clip and electrically connected to further modules.
In weiterer vorteilhafter Ausgestaltung des erfindungsgemäßen Leistungsmoduls kann das eingebettete stromführende erste Element und/oder das eingebettete stromführende zweite Element als Kupferinlay ausgeführt werden. In vorteilhafter Weise weist Kupfer sehr gute elektrische und thermische Leitfähigkeiten auf. Des Weiteren können Kupferinlays in vorteilhafter Weise einfach in die Leiterplatte eingebracht und kostengünstig hergestellt werden. In weiterer vorteilhafter Ausgestaltung des erfindungsgemäßen Leistungsmoduls können die erste Kontaktfläche und/oder die zweite Kontaktfläche planar mit einer Leiterplattenoberfläche abschließen. In vorteilhafter Weise kann eine Kontaktierung des Leistungsbauelements bei einer durchgängig planaren Oberfläche erleichtert werden. In vorteilhafter Weise kann das Leistungsbauelement auch nur teilweise auf der ersten Kontaktfläche anliegen und teilweise auf der Leitplattenoberfläche anliegen. In a further advantageous embodiment of the power module according to the invention, the embedded current-carrying first element and / or the embedded current-carrying second element can be designed as a copper inlay. Advantageously, copper has very good electrical and thermal conductivities. Furthermore, copper inlays can advantageously be easily introduced into the printed circuit board and produced inexpensively. In a further advantageous embodiment of the power module according to the invention, the first contact surface and / or the second contact surface may terminate planar with a printed circuit board surface. Advantageously, a contacting of the power device can be facilitated in a continuous planar surface. Advantageously, the power device may also rest only partially on the first contact surface and partially rest on the Leitplattenoberfläche.
In weiterer vorteilhafter Ausgestaltung des erfindungsgemäßen Leistungsmoduls kann zumindest das Leistungsbauelement von einer Moldmasse umgeben werden. Eine Moldmasse kann in vorteilhafter Weise das Leistungsbauelement vor äußeren Einflüssen schützen. Des Weiteren kann eine Moldmasse das Leistungsbauelement abkapseln und weitere Elemente, wie die Kontaktbereiche und/oder Teile der Leiterplattenoberfläche schützen. In vorteilhafter Weise kann durch die Moldmasse auf ein schützendes Gehäuse verzichtet werden. Des Weiteren kann die Moldmasse in vorteilhafter Weise nachträglich nach der Kontaktierung und/oder nach dem Bestücken der Leiterplatte materialsparend auf die Bereiche aufgebracht werden, welche eine schützende Moldmasse benötigen. Zudem ist es möglich alle auf der Leiterplatte angeordnete Leistungsbauelemente mit der schützenden Moldmasse zu umgeben. In a further advantageous embodiment of the power module according to the invention, at least the power component can be surrounded by a molding compound. A molding compound can advantageously protect the power component from external influences. Furthermore, a molding compound can encapsulate the power device and protect other elements, such as the contact areas and / or parts of the circuit board surface. Advantageously, can be dispensed with by the molding compound on a protective housing. Furthermore, the molding compound can advantageously be subsequently applied after the contacting and / or after the assembly of the circuit board to save material on the areas which require a protective molding compound. In addition, it is possible to surround all power components arranged on the printed circuit board with the protective molding compound.
In weiterer vorteilhafter Ausgestaltung des erfindungsgemäßen Leistungsmoduls kann das Leistungsbauelement als Halbleiterchip ausgeführt werden. Durch die Kontaktierung kann die vom Halbleiterchip erzeugte Wärme in vorteilhafter Weise weitergeleitet werden, des Weiteren können die erforderlichen Steuer- bzw. Leistungsströme einfach zugeführt werden. In a further advantageous embodiment of the power module according to the invention, the power component can be designed as a semiconductor chip. By contacting the heat generated by the semiconductor chip can be forwarded in an advantageous manner, further, the required control or power currents can be easily supplied.
In weiterer vorteilhafter Ausgestaltung des erfindungsgemäßen Leistungsmoduls kann mindestens eine Wärmesenke mit der Leiterplatte und/oder mit dem mindestens einen eingebetteten stromführenden ersten Element und/oder mit dem mindestens einen eingebetteten stromführenden zweiten Element thermisch gekoppelt werden. In vorteilhafter Weise erhöht die Wärmesenke die aufnehmbare thermische Energie, welche über das erste und/oder das zweite Element von dem Leistungsbauelement weggeleitet werden kann. Des Weiteren kann über eine Wärmesenke die Funktionstüchtigkeit des Leistungsmoduls erhöht werden, da die von dem Leistungsbauelement erzeugte Wärme an die Wärmesenke abge- geben werden kann, so dass andere wärmeempfindliche Bauteile nicht beschädigt werden. In a further advantageous embodiment of the power module according to the invention, at least one heat sink can be thermally coupled to the printed circuit board and / or to the at least one embedded current-carrying first element and / or to the at least one embedded current-carrying second element. Advantageously, the heat sink increases the absorbable thermal energy which may be conducted away from the power device via the first and / or second elements. Furthermore, the efficiency of the power module can be increased by means of a heat sink, since the heat generated by the power component is dissipated to the heat sink. can be given, so that other heat-sensitive components are not damaged.
In weiterer vorteilhafter Ausgestaltung des erfindungsgemäßen Leistungsmoduls kann eine Isolationsschicht die Wärmesenke elektrisch von der Leiterplatte und dem mindestens einen eingebetteten stromführenden ersten Element und dem mindestens einen eingebetteten stromführenden zweiten Element und dem Leistungsbauelement isolieren. In vorteilhafter Weise kann die Isolationsschicht Kurzschlüsse und/oder störende Magnetfelder verhindern. Eine Isolation zwi- sehen der Wärmesenke und den stromführenden Elementen oder dem Leistungsbauelement kann beispielsweise dadurch erzielt werden, dass die Wärmesenke auf einer Isolationsschicht der Leiterplatte angeordnet wird, so dass zwischen dem ersten und/oder dem zweiten Element und/oder einer leitenden Schicht der Leiterplatte und der Wärmesenke eine Isolationsschicht angeordnet ist. Des Weiteren kann eine Isolation durch ein so genanntes thermisches Interface Material (TIM) ermöglicht werden, wenn dieses elektrisch isolierende Eigenschaften aufweist. Ein TIM weist üblicherweise einen verringerten Kontaktwiderstand zwischen einem Metall, wie beispielweise einer thermischen Kontaktfläche des ersten und/oder des zweiten Elements und dem Kühlkörper auf. Bei einer Ausführung des Leistungsmoduls mit einem TIM kann die Wärmesenke auf demIn a further advantageous embodiment of the power module according to the invention, an insulating layer can electrically insulate the heat sink from the printed circuit board and the at least one embedded current-carrying first element and the at least one embedded current-carrying second element and the power component. Advantageously, the insulation layer can prevent short circuits and / or interfering magnetic fields. An insulation between see the heat sink and the current-carrying elements or the power device can be achieved, for example, that the heat sink is disposed on an insulating layer of the circuit board, so that between the first and / or the second element and / or a conductive layer of the circuit board and the heat sink is an insulation layer. Furthermore, insulation by means of a so-called thermal interface material (TIM) can be made possible if it has electrically insulating properties. A TIM usually has a reduced contact resistance between a metal, such as a thermal contact surface of the first and / or the second element and the heat sink. In one embodiment of the power module with a TIM, the heat sink may be on the
TIM angeordnet werden und das TIM kann mit den stromführenden Elementen direkt oder indirekt thermisch gekoppelt werden. TIM can be arranged and the TIM can be directly or indirectly thermally coupled to the current-carrying elements.
Ausführungsbeispiele der Erfindung sind in den Zeichnungen dargestellt und werden in der nachfolgenden Beschreibung näher erläutert. In den Zeichnungen bezeichnen gleiche Bezugszeichen Komponenten bzw. Elemente, die gleiche bzw. analoge Funktionen ausführen. Embodiments of the invention are illustrated in the drawings and are explained in more detail in the following description. In the drawings, like reference numerals designate components that perform the same or analog functions.
Kurze Beschreibung der Zeichnungen Brief description of the drawings
Fig. 1 zeigt einen schematischen Querschnitt eines ersten Ausführungsbeispiels eines erfindungsgemäßen Leistungsmoduls. Fig. 1 shows a schematic cross section of a first embodiment of a power module according to the invention.
Fig. 2 zeigt einen schematischen Querschnitt eines zweiten Ausführungsbei- spiels eines erfindungsgemäßen Leistungsmoduls. Fig. 3 zeigt einen schematischen Querschnitt eines dritten Ausführungsbeispiels eines erfindungsgemäßen Leistungsmoduls. 2 shows a schematic cross section of a second embodiment of a power module according to the invention. 3 shows a schematic cross section of a third exemplary embodiment of a power module according to the invention.
Fig. 4 zeigt einen schematischen Querschnitt eines vierten Ausführungsbeispiels eines erfindungsgemäßen Leistungsmoduls. 4 shows a schematic cross section of a fourth exemplary embodiment of a power module according to the invention.
Ausführungsformen der Erfindung Embodiments of the invention
Wie aus Fig. 1 bis 4 ersichtlich ist, umfassen die dargestellten Ausführungsbei- spiele eines erfindungsgemäßen Leistungsmoduls 1 a, 1 b, 1 c, 1 d mindestens einAs can be seen from FIGS. 1 to 4, the illustrated exemplary embodiments of a power module 1 a, 1 b, 1 c, 1 d according to the invention comprise at least one
Leistungsbauelement 10 mit mindestens zwei Anschlussflächen 12.1 , 12.2 und eine Leiterplatte 20, welche mindestens zwei eingebettete stromführende Elemente 26.1 , 26.2 aufweist. Das Leistungsbauelement 10 ist in den dargestellten Ausführungsbeispielen als Feldeffekttransistor ausgeführt. Power component 10 having at least two pads 12.1, 12.2 and a circuit board 20, which has at least two embedded current-carrying elements 26.1, 26.2. The power component 10 is designed in the illustrated embodiments as a field effect transistor.
Erfindungsgemäß ist mindestens ein eingebettetes stromführendes erstes Element 26.1 mit einer ersten Anschlussfläche 12.1 des Leistungsbauelements 10 direkt elektrisch und/oder thermisch verbunden, und mindestens ein eingebettetes stromführendes zweites Element 26.2 ist mit einer zweiten Anschlussfläche 12.2 des Leistungsbauelements 10 direkt oder indirekt elektrisch und/oder thermisch verbunden. According to the invention, at least one embedded current-carrying first element 26. 1 is directly electrically and / or thermally connected to a first connection surface 12. 1 of the power component 10, and at least one embedded current-carrying second element 26. 2 is directly or indirectly electrically and / or thermally connected to a second connection surface 12. 2 of the power component 10 connected.
Wie aus Fig. 1 bis 4 ersichtlich ist, sind das stromführende erste Element 26.1 und das stromführende zweite Element 26.2 in isolierende Schichten 22 der Lei- terplatte 20 eingebettet. Des Weiteren sind die stromführenden Elemente 26.1 ,As can be seen from FIGS. 1 to 4, the current-carrying first element 26. 1 and the current-carrying second element 26. 2 are embedded in insulating layers 22 of the printed circuit board 20. Furthermore, the current-carrying elements 26.1,
26.2 in den dargestellten Ausführungsbeispielen als Kupferinlays ausgeführt. Eine erste Kontaktfläche 26.3 des eingebetteten stromführenden ersten Elements 26.1 ist größer als die erste Anschlussfläche 12.1 des Leistungsbauelements 10. Durch die direkte Verbindung zwischen dem stromführenden ersten Element 26.1 und dem Leistungsbauelement 10 wird ein Verbindungselement eingespart.26.2 executed in the illustrated embodiments as copper inlays. A first contact surface 26.3 of the embedded current-carrying first element 26.1 is larger than the first connection surface 12.1 of the power component 10. The direct connection between the current-carrying first element 26.1 and the power component 10 saves a connecting element.
Des Weiteren wird durch die direkte Verbindung die Funktionssicherheit des Leistungsmoduls 1 a, 1 b, 1 c, 1 d erhöht. Durch die unterschiedlichen Größen der Kontaktfläche 26.3 und der Anschlussfläche 12.1 kann die thermische Verbindung verbessert werden. Eine zweite Kontaktfläche 26.4 des eingebetteten stromführenden zweiten Elements 26.2 ist über ein Anschlusselement 28 mit der zweiten Anschlussfläche 12.2 des Leistungsbauelements 10 verbunden. Dieses Anschlusselement 28 ist in den dargestellten Ausführungsbeispielen als Kontaktbügel ausgeführt. Durch die beidseitige Kontaktierung des Leistungsbauelements 10 kann eine vom Leistungsbauelement erzeugte Wärme schneller abtransportiert werden, des Weiteren kann ein größerer Strom auf das des Leistungsbau- element 10 übertragen werden, als bei einer einseitigen Kontaktierung. Somit kann das des Leistungsbauelement 10 als Halbleiterchip ausgeführt werden. Furthermore, the functional reliability of the power module 1 a, 1 b, 1 c, 1 d is increased by the direct connection. Due to the different sizes of the contact surface 26.3 and the pad 12.1, the thermal connection can be improved. A second contact surface 26. 4 of the embedded current-carrying second element 26. 2 is connected to the second connection surface 12. 2 of the power component 10 via a connection element 28. This Connecting element 28 is designed as a contact clip in the illustrated embodiments. Due to the contacting of the power component 10 on both sides, a heat generated by the power component can be transported away faster, furthermore, a larger current can be transferred to that of the power component 10, as in a one-sided contacting. Thus, the power device 10 may be implemented as a semiconductor chip.
Wie aus Fig. 1 bis 4 weiter ersichtlich ist, schließen die erste Kontaktfläche 26.3 des ersten Elements 26.1 und die zweite Kontaktfläche 26.4 des zweiten Ele- ments planar mit einer Leiterplattenoberfläche 21 ab. In einer alternativen Ausführungsform kann mindestens eine Kontaktfläche nicht planar mit der Leiterplattenoberfläche abschließen und beispielsweise in einer Aussparung der Leiterplatte angeordnet werden. Des Weiteren ist auch eine Anordnung denkbar, bei der mindestens eine Kontaktfläche von der Leiterplatte absteht. As is further apparent from FIGS. 1 to 4, the first contact surface 26. 3 of the first element 26. 1 and the second contact surface 26. 4 of the second element terminate planarly with a printed circuit board surface 21. In an alternative embodiment, at least one contact surface can not terminate planar with the circuit board surface and be arranged, for example, in a recess of the circuit board. Furthermore, an arrangement is conceivable in which at least one contact surface protrudes from the printed circuit board.
Wie aus Fig. 1 bis 4 weiter ersichtlich ist, ist zumindest das Leistungsbauelement 10 von einer Moldmasse 30 umgeben. In den dargestellten Ausführungsbeispielen umgibt die Moldmasse 30 zudem Bereiche der Kontaktflächen 26.3, 26.4 sowie Bereiche des Anschlusselements 28. Die Moldmasse 30 kapselt das Leis- tungsbauelement 10 sowie die elektrischen und thermischen Kontaktbereiche ab. As is further apparent from FIGS. 1 to 4, at least the power component 10 is surrounded by a molding compound 30. In the exemplary embodiments illustrated, the molding compound 30 also surrounds areas of the contact surfaces 26.3, 26.4 and regions of the connection element 28. The molding compound 30 encapsulates the power component 10 as well as the electrical and thermal contact areas.
Wie aus Fig. 1 bis 4 weiter ersichtlich ist, ist mindestens eine Wärmesenke 40 mit der Leiterplatte 20 und/oder mit dem mindestens einen eingebetteten stromführenden ersten Element 26.1 und/oder mit dem mindestens einen eingebetteten stromführenden zweiten Element 26.2 thermisch gekoppelt. In den dargestelltenAs is further apparent from FIGS. 1 to 4, at least one heat sink 40 is thermally coupled to the circuit board 20 and / or to the at least one embedded current-carrying first element 26. 1 and / or to the at least one embedded current-carrying second element 26. In the illustrated
Ausführungsbeispielen ist die Wärmesenke 40 indirekt über das erste Element 26.1 und das zweite Element 26.2 thermisch mit dem Leistungsbauelement 10 gekoppelt. Die Wärmesenke 40 ist auf einer Oberfläche der Leiterplatte 20 angeordnet, welche der Leiterplattenoberfläche 21 gegenüber liegt, auf welcher das Leistungsbauelement 10 angeordnet ist. Des Weiteren ist eine IsolationsschichtExemplary embodiments, the heat sink 40 is thermally coupled to the power device 10 indirectly via the first element 26.1 and the second element 26.2. The heat sink 40 is disposed on a surface of the circuit board 20 opposite to the circuit board surface 21 on which the power device 10 is disposed. Furthermore, an insulation layer
42.1 , 22.1 vorgesehen, welche die Wärmesenke 40 elektrisch von der Leiterplatte 20 und dem mindestens einen eingebetteten stromführenden ersten Element42.1, 22.1 provided, which the heat sink 40 electrically from the printed circuit board 20 and the at least one embedded current-carrying first element
26.1 und dem mindestens einen eingebetteten stromführenden zweiten Element26.1 and the at least one embedded current-carrying second element
26.2 und dem Leistungsbauelement 10 isoliert. Wie aus Fig. 1 bis 4 weiter ersichtlich ist, weist die Leiterplatte 20 zusätzliche stromführende Schichten 24 auf, welche an der Leiterplattenoberfläche 21 verlaufen oder welche in die Leitplatte 20 eingebettet sind. Die stromführenden Schichten 24 werden durch isolierenden Schichten 22 voneinander und von den eingebetteten Elementen 26.1 , 26.2 getrennt. 26.2 and the power component 10 isolated. As is further apparent from FIGS. 1 to 4, the printed circuit board 20 has additional current-carrying layers 24 which run on the printed circuit board surface 21 or which are embedded in the guide plate 20. The current-carrying layers 24 are separated by insulating layers 22 from each other and from the embedded elements 26.1, 26.2.
Wie aus Fig. 1 ersichtlich ist, weist das erste Ausführungsbeispiel einen zusätzlichen elektrischen Kontakt 29.1 auf, welcher die an der Leiterplattenoberfläche 21 verlaufende stromführende Schicht 24 mit der zweiten Anschlussfläche 12.2 des Leistungsbauelementes 20 verbindet. Der zusätzliche elektrische Kontakt 29.1 ist hierbei als sogenanntes Lötclip-Gate ausgeführt. Bei dieser Anordnung kann ein so genanntes Slug-down-Verfahren angewendet werden, um das Leistungsbauelement 20 elektrisch und thermisch zu kontaktieren. Des Weiteren ist in dem dargestellten ersten Ausführungsbeispiel zwischen der Wärmesenke 40 und den stromführenden Elementen 26.1 , 26.2 eine elektrisch isolierende Schicht 42.1 angeordnet. Diese elektrisch isolierende Schicht 42.1 kann als so genanntes thermisches Interface Material (TIM) ausgeführt werden. As can be seen from FIG. 1, the first exemplary embodiment has an additional electrical contact 29.1, which connects the current-carrying layer 24, which runs on the circuit board surface 21, to the second connection surface 12.2 of the power component 20. The additional electrical contact 29.1 is in this case designed as a so-called solder clip gate. With this arrangement, a so-called slug-down method can be used to electrically and thermally contact the power device 20. Furthermore, in the illustrated first exemplary embodiment, an electrically insulating layer 42.1 is arranged between the heat sink 40 and the current-carrying elements 26.1, 26.2. This electrically insulating layer 42.1 can be designed as a so-called thermal interface material (TIM).
Das in Fig. 2 dargestellte zweite Ausführungsbeispiel eines Leistungsmoduls 1 b unterscheidet sich von dem in Fig. 1 dargestellten ersten Ausführungsbeispiel eines Leistungsmoduls 1 a dadurch, dass die elektrisch isolierende Schicht 22.1 zwischen der Wärmesenke 40 und den stromführenden Elementen 26.1 , 26.2, dadurch umgesetzt wird, dass die stromführenden Elemente 26.1 , 26.2 an der, der Wärmesenke 40 zugewanden Oberfläche von isolierenden Leiterplattenmate- rial umgeben sind. Auf der elektrisch isolierenden Schicht 22.1 ist ein elektrisch leitfähiges thermisches Interface Material 42.2 angeordnet, auf welchem die Wärmesenke 40 angeordnet ist. Das thermische Interface Material 42.2 kann auch als elektrisch isolierendes thermisches Interface Material 42.1 ausgeführt werden. The second exemplary embodiment of a power module 1b illustrated in FIG. 2 differs from the first exemplary embodiment of a power module 1a shown in FIG. 1 in that the electrically insulating layer 22.1 between the heat sink 40 and the current-carrying elements 26.1, 26.2 is thereby implemented in that the current-carrying elements 26.1, 26.2 are surrounded by the surface of insulating printed circuit board material that is joined to the heat sink 40. On the electrically insulating layer 22.1, an electrically conductive thermal interface material 42.2 is arranged, on which the heat sink 40 is arranged. The thermal interface material 42.2 can also be designed as electrically insulating thermal interface material 42.1.
Das in Fig. 3 dargestellte dritte Ausführungsbeispiel eines Leistungsmoduls 1 c unterscheidet sich von dem in Fig. 2 dargestellten zweiten Ausführungsbeispiel eines Leistungsmoduls 1 b dadurch, dass auf der elektrisch isolierenden Schicht 22.1 zwischen den stromführenden Elementen 26.1 , 26.2 und dem thermischen Interface Material 42.1 , 42.2 eine lötbare Metallsierung 24.1 angeordnet ist. Bei dieser Anordnung kann ein Lötverfahren angewendet werden, um die Wärmesenke 40 mit dem Leistungsmodul 1 c zu verbinden. The third exemplary embodiment of a power module 1c shown in FIG. 3 differs from the second exemplary embodiment of a power module 1b shown in FIG. 2 in that, on the electrically insulating layer 22.1 between the current-carrying elements 26.1, 26.2 and the thermal interface, material 42.1, 42.2 a solderable metal 24.1 is arranged. at According to this arrangement, a soldering method can be used to connect the heat sink 40 to the power module 1 c.
Das in Fig. 4 dargestellte vierte Ausführungsbeispiel eines Leistungsmoduls 1 d unterscheidet sich von dem in Fig. 1 bis 3 dargestellten Ausführungsbeispielen eines Leistungsmoduls 1 a, 1 b, 1 c dadurch, dass das Leistungsmodul 1 d einen zusätzlichen elektrischen Kontakt 29.2 aufweist, welcher die an der Leiterplattenoberfläche 21 verlaufende stromführende Schicht 24 mit der der ersten Anschlussfläche 12.1 des Leistungsbauelementes 20 verbindet. Hierbei wird das Leistungsbauelement 20 auf die erste Kontaktfläche 26.3 und auf die die stromführende Schicht 24 aufgesetzt. Des Weiteren weist das vierte Ausführungsbeispiel eine zusätzliche Wärmesenke 40.1 auf, welche thermisch mit dem Anschlusselement 28 gekoppelt ist. Die zusätzliche Wärmesenke 40.1 ist auch bei den anderen Ausführungsbeispielen umsetzbar und ermöglicht eine effektive zweiseitige Kühlung des Leistungsbauelementes 20. The illustrated in Fig. 4 fourth embodiment of a power module 1 d differs from that shown in Fig. 1 to 3 embodiments of a power module 1 a, 1 b, 1 c characterized in that the power module 1 d has an additional electrical contact 29.2, which the on the circuit board surface 21 extending current-carrying layer 24 with the first connection surface 12.1 of the power device 20 connects. In this case, the power component 20 is placed on the first contact surface 26.3 and on the current-carrying layer 24. Furthermore, the fourth exemplary embodiment has an additional heat sink 40. 1, which is thermally coupled to the connection element 28. The additional heat sink 40.1 can also be implemented in the other exemplary embodiments and enables effective two-sided cooling of the power component 20.
Ausführungsformen der vorliegenden Erfindung stellten ein Leistungsmodul zur Verfügung, welches einen Leistungschip aufweist, welcher als so genannte B6- Schaltung bzw. als Drehstrombrückenschaltung ausgeführt werden kann und welcher auf eine Hochstromleiterplatte aufgebracht wird. Zum Kontaktieren wird der Leistungschip mit einer Fläche direkt auf ein stromführendes Element einer Hochstromleiterplatte aufgebracht und eine weitere Fläche wird über einen Kontaktbügel kontaktiert, welcher mit einer zweiten stromführenden Element verbunden ist. Der kontaktierte Leistungschip wird anschließend zusammen mit dem Kontaktbügel ummoldet. Die stromführenden Elemente sind mit einem Kühlkörper und/oder einer Wärmesenke verbunden. Eine weitere Wärmesenke kann an dem Kontaktbügel vorgesehen werden. Embodiments of the present invention have provided a power module having a power chip which may be implemented as a so-called B6 circuit or a three-phase bridge circuit and which is applied to a high-current circuit board. For contacting the power chip is applied with a surface directly on a current-carrying element of a high-current circuit board and another surface is contacted via a contact bar, which is connected to a second current-carrying element. The contacted power chip is then ummoldet together with the contact bracket. The current-carrying elements are connected to a heat sink and / or a heat sink. Another heat sink may be provided on the contact clip.

Claims

Ansprüche claims
1 . Leistungsmodul mit mindestens einem Leistungsbauelement (10) mit mindestens zwei Anschlussflächen (12.1 , 12.2) und mit einer Leiterplatte (20), welche mindestens zwei eingebettete stromführende Elemente (26.1 , 26.2) umfasst, dadurch gekennzeichnet, dass mindestens ein eingebettetes stromführendes erstes Element (26.1 ) mit einer ersten Anschlussfläche (12.1 ) des mindestens einen Leistungsbauelements (10) direkt elektrisch und/oder thermisch verbunden ist, und dass mindestens ein eingebettetes stromführendes zweites Element (26.2) mit einer zweiten Anschlussfläche (12.2) des Leistungsbauelements (10) direkt oder indirekt elektrisch und/oder thermisch verbunden ist. 1 . Power module having at least one power component (10) with at least two connection surfaces (12.1, 12.2) and with a printed circuit board (20) which comprises at least two embedded current-carrying elements (26.1, 26.2), characterized in that at least one embedded current-carrying first element (26.1 ) is directly electrically and / or thermally connected to a first connection surface (12.1) of the at least one power component (10), and that at least one embedded current-carrying second element (26.2) with a second connection surface (12.2) of the power component (10) directly or indirectly electrically and / or thermally connected.
2. Leistungsmodul nach Anspruch 1 , dadurch gekennzeichnet, dass eine erste Kontaktfläche (26.3) des mindestens einen eingebetteten stromführenden ersten Elements (26.1 ) größer ist als die erste Anschlussfläche (12.1 ) des mindestens einen Leistungsbauelements (10). 2. Power module according to claim 1, characterized in that a first contact surface (26.3) of the at least one embedded current-carrying first element (26.1) is larger than the first connection surface (12.1) of the at least one power component (10).
3. Leistungsmodul nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass eine zweite Kontaktfläche (26.4) des mindestens einen eingebetteten stromführenden zweiten Elements (26.2) über einen Anschlusselement (28) mit der zweiten Anschlussfläche (12.2) des mindestens einen Leistungsbauelements (10) verbunden ist. 3. Power module according to claim 1 or 2, characterized in that a second contact surface (26.4) of the at least one embedded current-carrying second element (26.2) via a connection element (28) to the second connection surface (12.2) of the at least one power component (10) is.
4. Leistungsmodul nach Anspruch 3, dadurch gekennzeichnet, dass das Anschlusselement (28) als Kontaktbügel ausgeführt ist. 4. Power module according to claim 3, characterized in that the connecting element (28) is designed as a contact clip.
5. Leistungsmodul nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass das eingebettete stromführende erste Element (26.1 ) und/oder das eingebettete stromführende zweite Element (26.2) als Kupferinlay ausgeführt ist. 5. Power module according to one of claims 1 to 4, characterized in that the embedded current-carrying first element (26.1) and / or the embedded current-carrying second element (26.2) is designed as a copper inlay.
6. Leistungsmodul nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass die erste Kontaktfläche (26.3) und/oder die zweite Kontaktfläche (26.4) planar mit einer Leiterplattenoberfläche (21 ) abschließen. 6. Power module according to one of claims 1 to 5, characterized in that the first contact surface (26.3) and / or the second contact surface (26.4) terminate planar with a circuit board surface (21).
7. Leistungsmodul nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, dass zumindest das mindestens eine Leistungsbauelement (10) von einer Moldmasse (30) umgeben ist. 7. Power module according to one of claims 1 to 6, characterized in that at least the at least one power component (10) is surrounded by a molding compound (30).
8. Leistungsmodul nach einem der Ansprüche 1 bis 7, dadurch gekennzeichnet, dass das mindestens eine Leistungsbauelement (10) als Halbleiterchip ausgeführt ist. 8. Power module according to one of claims 1 to 7, characterized in that the at least one power component (10) is designed as a semiconductor chip.
9. Leistungsmodul nach einem der Ansprüche 1 bis 8, dadurch gekennzeichnet, dass mindestens eine Wärmesenke (40) mit der Leiterplatte (20) und/oder mit dem mindestens einen eingebetteten stromführenden ersten Element (26.1 ) und/oder mit dem mindestens einen eingebetteten stromführenden zweiten Element (26.2) thermisch gekoppelt ist. 9. Power module according to one of claims 1 to 8, characterized in that at least one heat sink (40) with the printed circuit board (20) and / or with the at least one embedded current-carrying first element (26.1) and / or with the at least one embedded current-carrying second element (26.2) is thermally coupled.
10. Leistungsmodul nach einem der Ansprüche 1 bis 9, dadurch gekennzeichnet, dass eine Isolationsschicht (22) die Wärmesenke (40) elektrisch von der Leiterplatte (20) und dem mindestens einen eingebetteten stromführenden ersten Element (26.1 ) und dem mindestens einen eingebetteten stromführenden zweiten Element (26.2) und dem mindestens einen Leistungsbauelement (10) isoliert. 10. Power module according to one of claims 1 to 9, characterized in that an insulating layer (22) the heat sink (40) electrically from the printed circuit board (20) and the at least one embedded current-carrying first element (26.1) and the at least one embedded current-carrying second Element (26.2) and the at least one power component (10) isolated.
PCT/EP2014/052610 2013-03-20 2014-02-11 Power module with at least one power component WO2014146830A1 (en)

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