WO2014126147A1 - Feuille de résine pour scellage de composant électronique, dispositif semi-conducteur scellé par résine, et procédé de fabrication de dispositif semi-conducteur scellé par résine - Google Patents

Feuille de résine pour scellage de composant électronique, dispositif semi-conducteur scellé par résine, et procédé de fabrication de dispositif semi-conducteur scellé par résine Download PDF

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WO2014126147A1
WO2014126147A1 PCT/JP2014/053318 JP2014053318W WO2014126147A1 WO 2014126147 A1 WO2014126147 A1 WO 2014126147A1 JP 2014053318 W JP2014053318 W JP 2014053318W WO 2014126147 A1 WO2014126147 A1 WO 2014126147A1
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Prior art keywords
resin
sealing
resin sheet
electronic component
semiconductor device
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PCT/JP2014/053318
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English (en)
Japanese (ja)
Inventor
豊田 英志
森 弘幸
祐作 清水
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日東電工株式会社
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Application filed by 日東電工株式会社 filed Critical 日東電工株式会社
Priority to CN201480008390.5A priority Critical patent/CN105190867A/zh
Priority to SG11201505837RA priority patent/SG11201505837RA/en
Priority to KR1020157025085A priority patent/KR20150119265A/ko
Publication of WO2014126147A1 publication Critical patent/WO2014126147A1/fr

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    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
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    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/146Mixed devices
    • H01L2924/1461MEMS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Definitions

  • the present invention relates to a resin sheet for encapsulating electronic components, a resin-encapsulated semiconductor device, and a method for producing a resin-encapsulated semiconductor device.
  • Patent Document 1 a polypropylene resin sheet having moisture permeability resistance is known (for example, see Patent Document 1).
  • the polypropylene resin sheet described in Patent Document 1 is used for various packaging and containers.
  • the present invention has been made in view of the above problems, and an object thereof is to provide an electronic component sealing resin sheet capable of improving the reliability of a resin-encapsulated semiconductor device, and a highly reliable resin encapsulation.
  • the object is to provide a stationary semiconductor device.
  • the resin sheet for encapsulating an electronic component according to the present invention is an electronic component encapsulating resin sheet used for manufacturing a resin-encapsulated semiconductor device, and an inorganic filler is added to the entire resin sheet for encapsulating an electronic component.
  • the moisture permeability after thermosetting when it is 70 to 93% by weight and the thickness is 250 ⁇ m is 300 g / m 2 ⁇ 24 hours or less under the conditions of temperature 85 ° C., humidity 85%, 168 hours. It is characterized by being.
  • the reliability of a resin-encapsulated semiconductor device is considered to depend on the water absorption of the encapsulating resin, and moisture permeability has not been studied. Therefore, there has been a situation in which the reliability of the resin-encapsulated semiconductor device cannot be ensured despite the low water absorption of the encapsulating resin.
  • the inventors have found that the reliability of the resin-encapsulated semiconductor device is improved when the moisture permeability of the encapsulating resin is low.
  • the present inventors presume that when the moisture permeability of the sealing resin is low, it is difficult for water to reach the electronic component from the outside. In other words, even when a sealing resin with high moisture permeability is used even if water absorption is low, the reliability of the resin-encapsulated semiconductor device decreases because water eventually reaches the electronic component. I guess it will be.
  • the inorganic filler is contained in an amount of 70 to 93% by weight based on the entire electronic component sealing resin sheet, and the moisture permeability after thermosetting when the thickness is 250 ⁇ m is 85 ° C. Since it is 300 g / m 2 ⁇ 24 hours or less under the conditions of 85% humidity and 168 hours, water hardly reaches the electronic parts from the outside. As a result, the reliability of the resin-encapsulated semiconductor device can be improved.
  • the evaluation conditions of the moisture permeability were set to a temperature of 85 ° C., a humidity of 85%, and a duration of 168 hours in order to meet the Level 1 condition which is the most severe moisture absorption condition in the solder resistance test (MSL test) of the semiconductor package.
  • the water vapor transmission rate after thermosetting when it is 250 micrometers in thickness is 100 g / m ⁇ 2 > * 24 hours or less on the conditions of temperature 60 degreeC, humidity 90%, and 168 hours.
  • the moisture permeability after thermosetting is 100 g / m 2 ⁇ 24 hours or less under the conditions of a temperature of 60 ° C., a humidity of 90%, and 168 hours.
  • the sex can be further improved.
  • the evaluation condition of moisture permeability is set to a temperature of 60 ° C., a humidity of 90%, and 168 hours because this condition is one of the most severe conditions in a high temperature and high humidity leaving test of a semiconductor package.
  • the thickness is not 250 ⁇ m, it is converted to the moisture permeability when the thickness is 250 ⁇ m under the conditions of a temperature of 60 ° C., a humidity of 90%, and 168 hours, converted according to the following formula 2.
  • A- (250-D) ⁇ 0.010 A: moisture permeability, D: sample thickness ( ⁇ m)
  • the resin sheet for encapsulating an electronic component of the present invention contains 70 to 93% by weight of an inorganic filler with respect to the entire resin sheet for encapsulating an electronic component, and is thus difficult to be molded into a sheet. Therefore, by producing by kneading extrusion, a uniform sheet with few voids (bubbles) can be obtained. As a result, low moisture permeability can be realized.
  • the resin-encapsulated semiconductor device includes an adherend, a semiconductor chip flip-chip connected to the adherend, and an electronic component sealing resin sheet for sealing the semiconductor chip
  • the resin sheet for encapsulating electronic parts contains an inorganic filler in an amount of 70 to 93% by weight with respect to the entire resin sheet for encapsulating electronic parts, and the moisture permeability after thermosetting when the thickness is 250 ⁇ m has a temperature of 85. It is 300 g / m 2 ⁇ 24 hours or less under the conditions of ° C., humidity 85%, 168 hours, and a gap is formed between the adherend and the semiconductor chip.
  • the resin sheet for encapsulating electronic components contains 70 to 93% by weight of the inorganic filler with respect to the entire resin sheet for encapsulating electronic components, and after thermosetting when the thickness is 250 ⁇ m. Since the water vapor permeability is 300 g / m 2 ⁇ 24 hours or less under the conditions of a temperature of 85 ° C., a humidity of 85% and 168 hours, water enters the gap between the adherend and the semiconductor chip from the outside. It is hard to do. As a result, the reliability of the resin-encapsulated semiconductor device can be improved.
  • a resin-encapsulated semiconductor device is characterized by having the above-described resin sheet for encapsulating electronic components.
  • the resin sheet for encapsulating electronic parts contains an inorganic filler in an amount of 70 to 93% by weight with respect to the entire resin sheet for encapsulating electronic parts, and after thermosetting when the thickness is 250 ⁇ m. Since the water vapor transmission rate is 300 g / m 2 ⁇ 24 hours or less under conditions of a temperature of 85 ° C., a humidity of 85%, and 168 hours, water hardly reaches the electronic component from the outside. As a result, the reliability of the resin-encapsulated semiconductor device can be improved.
  • the method for manufacturing a resin-encapsulated semiconductor device includes a step of laminating a resin sheet for encapsulating electronic components from the semiconductor chip side so as to cover the semiconductor chip flip-chip connected on the adherend.
  • the electronic component sealing resin sheet comprises 70 to 93% by weight of an inorganic filler with respect to the entire electronic component sealing resin sheet, and has a moisture permeability after thermosetting when the thickness is 250 ⁇ m.
  • the temperature is 300 g / m 2 ⁇ 24 hours or less under the conditions of 85 ° C., 85% humidity and 168 hours.
  • the resin sheet for encapsulating electronic parts contains an inorganic filler in an amount of 70 to 93% by weight based on the entire resin sheet for encapsulating electronic parts, and after thermosetting when the thickness is 250 ⁇ m. Is 300 g / m 2 ⁇ 24 hours or less under the conditions of a temperature of 85 ° C., a humidity of 85%, and 168 hours, the manufactured resin-encapsulated semiconductor device has water from the outside to the electronic components. Is hard to reach. As a result, the reliability of the resin-encapsulated semiconductor device can be improved.
  • FIG. 1 is a schematic cross-sectional view showing an example of an electronic component sealing resin sheet according to the present embodiment. Note that in this specification, parts unnecessary for description are omitted in the drawings, and there are parts illustrated in an enlarged or reduced manner for ease of description.
  • the electronic component sealing resin sheet 2 has a sheet-like form.
  • the resin sheet 2 for electronic component sealing is used for manufacturing a resin-sealed semiconductor device (for example, the resin-sealed semiconductor device 50 shown in FIG. 6).
  • the resin sheet 2 for sealing an electronic component has a moisture permeability of 300 g / m 2 ⁇ 24 hours or less under conditions of a temperature of 85 ° C., a humidity of 85%, and 168 hours when the thickness is 250 ⁇ m. 200 g / m 2 ⁇ 24 hours or less is preferable, and 100 g / m 2 ⁇ 24 hours or less is more preferable. Moreover, although the said water vapor transmission rate is so preferable that it is small, it is 1 g / m ⁇ 2 > * 24 hours or more, for example.
  • the moisture permeability after thermosetting when the thickness is 250 ⁇ m is 300 g / m 2 ⁇ 24 hours or less under the conditions of a temperature of 85 ° C., a humidity of 85%, and 168 hours. Hard to reach. As a result, the reliability of the resin-encapsulated semiconductor device having the electronic component encapsulating resin sheet 2 can be improved.
  • the resin sheet 2 for sealing an electronic component has a moisture permeability of 100 g / m 2 ⁇ 24 hours or less under conditions of a temperature of 60 ° C., a humidity of 90%, and 168 hours when the thickness is 250 ⁇ m. It is preferably 50 g / m 2 ⁇ 24 hours or less, and more preferably 20 g / m 2 ⁇ 24 hours or less. Moreover, although the said water vapor transmission rate is so preferable that it is small, it is 0.5 g / m ⁇ 2 > * 24 hours or more, for example.
  • the moisture permeability after thermosetting is 100 g / m 2 ⁇ 24 hours or less under the conditions of a temperature of 60 ° C., a humidity of 90%, and 168 hours.
  • the reliability of the resin-encapsulated semiconductor device having can be further improved.
  • the resin composition for forming the resin sheet 2 for sealing an electronic component is not particularly limited as long as it can be used for sealing an electronic component (for example, the semiconductor chip 5).
  • a component to E component The resin composition containing is mentioned as a preferable thing.
  • the epoxy resin (component A) is not particularly limited.
  • Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
  • a modified bisphenol A type epoxy resin having a flexible skeleton such as an acetal group or a polyoxyalkylene group is preferable, and a modified bisphenol A type epoxy resin having an acetal group is in a liquid state and is easy to handle. Therefore, it can be particularly preferably used.
  • the content of the epoxy resin (component A) is preferably 1 to 10% by weight, and more preferably 2 to 5% by weight, based on the entire resin sheet for sealing electronic parts.
  • the phenol resin (component B) is not particularly limited as long as it causes a curing reaction with the epoxy resin (component A).
  • a phenol novolak resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resole resin, or the like is used. These phenolic resins may be used alone or in combination of two or more.
  • phenol resin those having a hydroxyl equivalent weight of 70 to 250 and a softening point of 50 to 110 ° C. are preferably used from the viewpoint of reactivity with the epoxy resin (component A), and above all, from the viewpoint of high curing reactivity.
  • a phenol novolac resin can be preferably used. From the viewpoint of reliability, low hygroscopic materials such as phenol aralkyl resins and biphenyl aralkyl resins can also be suitably used.
  • the blending ratio of the epoxy resin (component A) and the phenol resin (component B) is a hydroxyl group in the phenol resin (component B) with respect to 1 equivalent of the epoxy group in the epoxy resin (component A). It is preferable to blend so that the total amount becomes 0.7 to 1.5 equivalents, more preferably 0.9 to 1.2 equivalents.
  • the elastomer (C component) used together with the epoxy resin (A component) and the phenol resin (B component) provides flexibility necessary for sealing the semiconductor chip 5 when the resin sheet for sealing electronic components is formed into a sheet shape.
  • the structure is not particularly limited as long as it is imparted to the resin composition and exhibits such an action.
  • various acrylic copolymers such as polyacrylates, styrene acrylate copolymers, butadiene rubber, styrene-butadiene rubber (SBR), ethylene-vinyl acetate copolymer (EVA), isoprene rubber, acrylonitrile rubber, etc. Polymers can be used.
  • the epoxy resin (component A) it is easy to disperse in the epoxy resin (component A), and because the reactivity with the epoxy resin (component A) is high, the heat resistance and strength of the resulting resin sheet for sealing electronic components can be improved. From the viewpoint, it is preferable to use an acrylic copolymer. These may be used alone or in combination of two or more.
  • the acrylic copolymer can be synthesized, for example, by radical polymerization of an acrylic monomer mixture having a predetermined mixing ratio by a conventional method.
  • a method for radical polymerization a solution polymerization method in which an organic solvent is used as a solvent or a suspension polymerization method in which polymerization is performed while dispersing raw material monomers in water are used.
  • polymerization initiator used in this case examples include 2,2′-azobisisobutyronitrile, 2,2′-azobis- (2,4-dimethylvaleronitrile), and 2,2′-azobis-4- Methoxy-2,4-dimethylvaleronitrile, other azo or diazo polymerization initiators, peroxide polymerization initiators such as benzoyl peroxide and methyl ethyl ketone peroxide are used.
  • a dispersing agent such as polyacrylamide or polyvinyl alcohol.
  • the content of the elastomer (component C) is preferably 1 to 10% by weight, and more preferably 2 to 5% by weight, based on the entire resin sheet for sealing electronic parts.
  • the sheet can have flexibility and toughness.
  • strength of a molded object required as a package can be expressed by content of an elastomer (C component) being 10 weight% or less.
  • the weight ratio of the elastomer (component C) to the epoxy resin (component A) is preferably 0.3 to 2, and preferably 0.7 to 1.5. It is more preferable. By setting the weight ratio to 0.3 or more, toughness and flexibility can be imparted to the sheet. On the other hand, by setting the weight ratio to 2 or less, the reliability of the package after curing can be maintained.
  • the inorganic filler (component D) is not particularly limited, and various conventionally known fillers can be used.
  • various conventionally known fillers can be used.
  • powders such as aluminum and silicon nitride. These may be used alone or in combination of two or more.
  • silica powder from the viewpoint of low moisture permeability, and it is more preferable to use fused silica powder among silica powders.
  • the fused silica powder include spherical fused silica powder and crushed fused silica powder. From the viewpoint of fluidity, it is particularly preferable to use a spherical fused silica powder.
  • those having an average particle diameter in the range of 0.1 to 50 ⁇ m are preferably used, and those having a range of 0.3 to 25 ⁇ m are particularly preferable.
  • the average particle diameter can be derived by, for example, using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
  • the content of the inorganic filler (component D) is preferably 70 to 93% by weight, more preferably 75 to 90% by weight, and more preferably 80 to 88% with respect to the entire resin sheet for sealing electronic parts. More preferably, it is% by weight. Since the inorganic filler has low moisture permeability, the moisture permeability of the electronic component sealing resin sheet 2 can be lowered by setting the content to 70% by weight or more. On the other hand, by setting the content of the inorganic filler to 93% by weight or less, the resin sheet 2 for sealing an electronic component can be easily formed into a sheet shape.
  • the curing accelerator (component E) is not particularly limited as long as it allows curing of the epoxy resin and the phenol resin, but from the viewpoint of curability and storage stability, triphenylphosphine or tetraphenylphosphonium tetraphenyl. Organic phosphorus compounds such as borates and imidazole compounds are preferably used. These curing accelerators may be used alone or in combination with other curing accelerators.
  • the content of the curing accelerator (component E) is preferably 0.1 to 5 parts by weight with respect to a total of 100 parts by weight of the epoxy resin (component A) and the phenol resin (component B).
  • a flame retardant component may be added to the resin composition.
  • the flame retardant composition include organophosphorus flame retardants such as phosphazene, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, and complex metal hydroxides. Etc. can be used.
  • Organophosphorous flame retardants are preferred from the viewpoint of dispersibility in the resin composition, but depending on the case, aluminum hydroxide or hydroxide may be used from the viewpoint of exhibiting flame retardancy with a relatively small addition amount or from a cost viewpoint. Sometimes magnesium is used. These may be used alone or in combination.
  • the resin composition can contain other additives such as pigments such as carbon black as needed in addition to the above components.
  • a resin composition is prepared by mixing the above-described components.
  • the mixing method is not particularly limited as long as each component is uniformly dispersed and mixed. Thereafter, for example, a varnish in which each component is dissolved or dispersed in an organic solvent or the like is applied to form a sheet.
  • a kneaded material may be prepared by directly kneading each compounding component with a kneader or the like, and the kneaded material thus obtained may be extruded to form a sheet.
  • the above components A to E and other additives as necessary are mixed as appropriate according to a conventional method, and uniformly dissolved or dispersed in an organic solvent to prepare a varnish.
  • the resin sheet 2 for electronic component sealing can be obtained by apply
  • peeling sheets such as a polyester film. The release sheet peels at the time of sealing.
  • the organic solvent is not particularly limited, and various conventionally known organic solvents such as methyl ethyl ketone, acetone, cyclohexanone, dioxane, diethyl ketone, toluene, and ethyl acetate can be used. These may be used alone or in combination of two or more. Usually, it is preferable to use an organic solvent so that the solid content concentration of the varnish is in the range of 30 to 60% by weight.
  • the thickness of the sheet after drying the organic solvent is not particularly limited, but is usually preferably set to 5 to 100 ⁇ m, more preferably 20 to 70 ⁇ m, from the viewpoint of thickness uniformity and the amount of residual solvent. is there.
  • the above components A to E and, if necessary, each component of other additives are mixed using a known method such as a mixer, and then kneaded to prepare a kneaded product.
  • the method of melt kneading is not particularly limited, and examples thereof include a method of melt kneading with a known kneader such as a mixing roll, a pressure kneader, or an extruder.
  • the kneading conditions are not particularly limited as long as the temperature is equal to or higher than the softening point of each component described above.
  • thermosetting property of the epoxy resin it is preferably 40 to 140 ° C., more preferably The temperature is 60 to 120 ° C., and the time is, for example, 1 to 30 minutes, preferably 5 to 15 minutes. Thereby, a kneaded material can be prepared.
  • the resin sheet 2 for electronic component sealing can be obtained by shape
  • the resin sheet 2 for sealing an electronic component can be formed by extrusion molding without cooling the kneaded product after melt-kneading.
  • Such an extrusion method is not particularly limited, and examples thereof include a T-die extrusion method, a roll rolling method, a roll kneading method, a co-extrusion method, and a calendar molding method.
  • the extrusion temperature is not particularly limited as long as it is equal to or higher than the softening point of each component described above. However, considering the thermosetting property and moldability of the epoxy resin, for example, 40 to 150 ° C., preferably 50 to 140 ° C. Preferably, it is 70 to 120 ° C.
  • the resin sheet 2 for electronic component sealing can be formed by the above.
  • the inorganic filler is contained in an amount of 70 to 93% by weight based on the entire electronic component sealing resin sheet 2, it is preferably manufactured by kneading extrusion from the viewpoint of formability into a sheet. By producing by kneading extrusion, a uniform sheet with less voids (bubbles) can be obtained. As a result, low moisture permeability can be realized.
  • the resin sheet 2 for encapsulating electronic parts obtained in this way may be laminated and used so as to have a desired thickness if necessary. That is, the sheet-like resin composition may be used in a single layer structure, or may be used as a laminate formed by laminating two or more multilayer structures.
  • FIGS. 2 to 6 are schematic cross-sectional views for explaining the method for manufacturing the resin-encapsulated semiconductor device according to this embodiment.
  • the manufacturing method of the semiconductor device includes at least a step of laminating a resin sheet for encapsulating electronic components from the semiconductor chip side so as to cover the semiconductor chip flip-chip connected on the adherend.
  • the semiconductor wafer 4 is stuck on the pressure-sensitive adhesive layer 32 of the dicing tape 3 in which the pressure-sensitive adhesive layer 32 is laminated on the base material 31, and this is adhered and held and fixed ( Mounting process).
  • the pressure-sensitive adhesive layer 32 is attached to the back surface of the semiconductor wafer 4.
  • the back surface of the semiconductor wafer 4 means a surface opposite to the circuit surface (also referred to as a non-circuit surface or a non-electrode forming surface).
  • the sticking method is not specifically limited, the method by pressure bonding is preferable.
  • the crimping is usually performed while pressing with a pressing means such as a crimping roll.
  • a dicing tape 3 a conventionally well-known thing can be used.
  • Examples of the base material 31 include, for example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, very low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, and polymethyl.
  • Polyolefin such as pentene, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer , Ethylene-hexene copolymer, polyurethane, polyester such as polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polymer Amides, polyphenyl sulfide, aramid (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil) can also be used such as paper.
  • polyester such as polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide
  • the pressure-sensitive adhesive used for forming the pressure-sensitive adhesive layer 32 for example, a general pressure-sensitive pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive can be used.
  • the pressure-sensitive adhesive layer 32 can be formed of an ultraviolet curable pressure-sensitive adhesive.
  • the ultraviolet curable pressure-sensitive adhesive can increase the degree of crosslinking by irradiation with ultraviolet rays and easily reduce its adhesive strength, and can be easily picked up when irradiated with ultraviolet rays after the dicing step.
  • the semiconductor wafer 4 is diced. As a result, the semiconductor wafer 4 is cut into a predetermined size and divided into pieces (small pieces), whereby the semiconductor chip 5 is manufactured. Dicing is performed according to a conventional method from the circuit surface side of the semiconductor wafer 4, for example. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used.
  • the expanding can be performed using a conventionally known expanding apparatus.
  • the expanding device has a donut-shaped outer ring that can push down the dicing tape 3 through the dicing ring, and an inner ring that has a smaller diameter than the outer ring and supports the dicing tape 3.
  • the semiconductor chip 5 is picked up and peeled off from the dicing tape 3 as shown in FIG. 4.
  • the pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up the individual semiconductor chips 5 from the base 31 side with a needle and picking up the pushed-up semiconductor chips 5 with a pick-up device may be mentioned.
  • the picked-up semiconductor chip 5 is fixed to an adherend such as a substrate by a flip chip bonding method (flip chip mounting method).
  • the semiconductor chip 5 is always placed on the adherend 6 such that the circuit surface (also referred to as a surface, a circuit pattern formation surface, an electrode formation surface, etc.) of the semiconductor chip 5 faces the adherend 6.
  • the circuit surface also referred to as a surface, a circuit pattern formation surface, an electrode formation surface, etc.
  • the bump 51 formed on the circuit surface side of the semiconductor chip 5 is brought into contact with a bonding conductive material (solder or the like) 61 attached to the connection pad of the adherend 6 while pressing the conductive material.
  • the semiconductor chip 5 By melting, it is possible to secure electrical continuity between the semiconductor chip 5 and the adherend 6 and fix the semiconductor chip 5 to the adherend 6 (flip chip bonding step). At this time, a gap is formed between the semiconductor chip 5 and the adherend 6, and the gap distance is generally about 15 ⁇ m to 300 ⁇ m. Note that after the semiconductor chip 5 is flip-chip bonded (flip chip connection) on the adherend 6, the facing surface and the gap between the semiconductor chip 5 and the adherend 6 may be cleaned. Further, the gap may be sealed by being filled with a sealing material (such as a sealing resin) depending on the use of the semiconductor device, or may be left as it is.
  • a sealing material such as a sealing resin
  • MEMS and surface acoustic wave filters such as acceleration sensors, pressure sensors, and gyro sensors
  • SAW filters surface acoustic wave filters
  • various substrates such as a lead frame and a circuit substrate (such as a wiring circuit substrate) can be used.
  • the material of such a substrate is not particularly limited, and examples thereof include a ceramic substrate and a plastic substrate.
  • the plastic substrate include an epoxy substrate, a bismaleimide triazine substrate, and a polyimide substrate.
  • the material of the bump or the conductive material is not particularly limited, and for example, a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, a tin-zinc metal Materials, solders (alloys) such as tin-zinc-bismuth metal materials, gold metal materials, copper metal materials, and the like.
  • the conductive material is melted to connect the bumps on the circuit surface side of the semiconductor chip 5 and the conductive material on the surface of the adherend 6.
  • the temperature is usually about 260 ° C. (for example, 250 ° C. to 300 ° C.).
  • a sealing step for sealing the gap between the flip chip bonded semiconductor chip 5 and the adherend 6 is performed.
  • the sealing step is performed using an underfill sealing resin.
  • the sealing conditions at this time are not particularly limited.
  • the sealing resin is thermally cured by heating at 175 ° C. for 60 seconds to 90 seconds, but the present invention is not limited to this. For example, it can be cured at 165 ° C. to 185 ° C. for several minutes.
  • the underfill sealing resin is not particularly limited as long as it is an insulating resin (insulating resin), and can be appropriately selected from sealing materials such as known sealing resins. An insulating resin is more preferable.
  • the underfill sealing resin include a resin composition containing an epoxy resin.
  • the epoxy resin include the epoxy resins exemplified above.
  • the sealing resin for underfill using a resin composition containing an epoxy resin includes, as a resin component, a thermosetting resin other than an epoxy resin (such as a phenol resin) or a thermoplastic resin. It may be.
  • a phenol resin it can utilize also as a hardening
  • the electronic component sealing resin sheet 2 is stacked on the adherend 6 from the semiconductor chip 5 side so as to cover the semiconductor chip 5 (see FIG. 6).
  • the electronic component sealing resin sheet 2 functions as a sealing resin for protecting the semiconductor chip 5 and its accompanying elements from the external environment.
  • the method for laminating the resin sheet 2 for sealing an electronic component is not particularly limited, and a melt-kneaded product of a resin composition for forming the resin sheet for sealing an electronic component is extruded, and the extruded product is formed on the semiconductor chip 5 side.
  • a method for forming and laminating a resin sheet for encapsulating electronic parts in a lump by placing and pressing on an adherend 6 from the substrate, and a resin composition for forming a resin sheet for encapsulating electronic parts Is applied to the adherend 6 from the semiconductor chip 5 side, and then dried, the resin composition is applied onto the release treatment sheet, and the coating film is dried to form the resin sheet 2 for sealing an electronic component.
  • a method of transferring the resin sheet 2 for sealing an electronic component from the semiconductor chip 5 side onto the adherend 6 is exemplified.
  • the resin sheet 2 for electronic component sealing can be laminated on the adherend 6 by a known method such as hot press or laminator.
  • hot press conditions the temperature is, for example, 40 to 120 ° C., preferably 50 to 100 ° C.
  • the pressure is, for example, 50 to 2500 kPa, preferably 100 to 2000 kPa
  • the time is, for example, 0 3 to 10 minutes, preferably 0.5 to 5 minutes.
  • it is preferable to press under reduced pressure conditions for example, 10 to 2000 Pa).
  • the electronic component sealing resin sheet 2 is cured.
  • the electronic component sealing resin sheet 2 is cured in a temperature range of 120 ° C. to 190 ° C., a heating time of 1 minute to 60 minutes, and a pressure of 0.1 MPa to 10 MPa.
  • the resin-encapsulated semiconductor device 50 is obtained.
  • the stationary semiconductor device 50 can be manufactured.
  • the resin sheet for sealing an electronic component is used for manufacturing a flip-chip type semiconductor device.
  • the resin sheet for sealing an electronic component of the present invention is not limited to this example, and can be used for manufacturing a semiconductor device in which the back surface of a semiconductor chip is attached to an adherend.
  • the present invention is not limited to this example, and a flip chip type semiconductor back film is attached to the back surface of the semiconductor chip. May be attached.
  • the flip chip type film for semiconductor back surface is used to protect the back surface (exposed back surface) of the semiconductor chip when the semiconductor chip is mounted on the substrate by flip chip bonding. Can be adopted.
  • the resin sheet for sealing an electronic component is laminated from the semiconductor chip side so as to cover the semiconductor chip flip-chip connected to the adherend.
  • the resin sheet for use may be laminated so as to cover not only the semiconductor chip but also other electronic components (for example, a capacitor, a resistor, etc.). That is, the resin sheet for encapsulating electronic components of the present invention is not limited to embedding semiconductor chips, and may be used for embedding other electronic components.
  • Example 1 ⁇ Preparation of kneaded product of resin sheet for sealing electronic parts> (Example 1) The following components were kneaded with a biaxial kneader at 120 ° C. for 5 minutes to prepare a kneaded product.
  • Component A epoxy resin: bisphenol F type epoxy resin (manufactured by Toto Kasei Co., Ltd., YSLV-80XY) 3.38 parts
  • Component B phenol resin: phenol resin having a biphenylaralkyl skeleton (manufactured by Meiwa Kasei Co., Ltd., MEH7851SS) 3.58 parts
  • Other components 1 Carbon black ( Made by Mitsubishi Chemical
  • the kneaded product was extrusion-molded, and the extrusion-molded product was set to a certain thickness (250 ⁇ m in Example 1) by a vacuum press.
  • the vacuum pressing was performed under the condition of pressing the inside of the chamber heated to 90 ° C. for 5 minutes (pressing pressure: 2 MPa). Thereby, the resin sheet for electronic component sealing which concerns on Example 1 was obtained. Then, it heated at 150 degreeC for 1 hour, and was hardened.
  • Example 2 to 6 and Comparative Example 1 Resin sheets for electronic component sealing according to Examples 2 to 6 and Comparative Example 1 were obtained in the same manner as Example 1 except that the blending amount was changed as shown in Table 1. Then, it heated at 150 degreeC for 1 hour, and was hardened.
  • Example 7 The following components were dissolved in 400 parts by weight of methyl ethyl ketone and blended so as to be uniform with a homogenizer.
  • a component 1 (epoxy resin 1): (DIC, EXA-4850-150) 3.62 parts
  • a component 2 (epoxy resin 2): novolac epoxy resin (Dainippon Ink, EPPN501HY) 1.53 parts
  • B component phenol resin: (Gunei Chemical Co., Ltd., GS-200) 1.84 parts
  • C component (elastomer) weight average molecular weight 750,000 consisting of 86 parts butyl acrylate, 7 parts acrylonitrile, 7 parts glycidyl methacrylate Acrylic copolymer 17.02 parts
  • Other ingredients carbon black (manufactured by Mitsubishi Chemical Corporation, # 20) 0.74
  • the compound was coated using a comma coater and dried with a solvent to obtain a resin sheet having a thickness of 50 ⁇ m.
  • the resin sheet for electronic component sealing which concerns on Example 7 with a thickness of 250 micrometers was obtained by laminating

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)

Abstract

L'invention concerne une feuille de résine pour scellage d'un composant électronique qui est utilisé pour produire un dispositif semi-conducteur scellé par résine, qui comprend, par rapport à la totalité de la feuille de résine pour scellage du composant électronique, de 70 à 93 % en poids d'une charge inorganique, et, après avoir été thermiquement durcie lorsque l'épaisseur de celle-ci est établie à 250 µm, possède un taux de transmission de vapeur d'eau dans des conditions dans lesquelles la température est de 85°C et l'humidité est de 85 %, pour une période de 168 heures, inférieure à 300 g/m2/24 heures.
PCT/JP2014/053318 2013-02-14 2014-02-13 Feuille de résine pour scellage de composant électronique, dispositif semi-conducteur scellé par résine, et procédé de fabrication de dispositif semi-conducteur scellé par résine WO2014126147A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201480008390.5A CN105190867A (zh) 2013-02-14 2014-02-13 电子部件密封用树脂片、树脂密封型半导体装置及树脂密封型半导体装置的制造方法
SG11201505837RA SG11201505837RA (en) 2013-02-14 2014-02-13 Resin sheet for sealing electronic component, resin-sealed semiconductor device, and production method for resin-sealed semiconductor device
KR1020157025085A KR20150119265A (ko) 2013-02-14 2014-02-13 전자 부품 봉지용 수지 시트, 수지 봉지형 반도체 장치, 및 수지 봉지형 반도체 장치의 제조 방법

Applications Claiming Priority (2)

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JP2013-026935 2013-02-14
JP2013026935A JP6228734B2 (ja) 2013-02-14 2013-02-14 電子部品封止用樹脂シート、樹脂封止型半導体装置、及び、樹脂封止型半導体装置の製造方法

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WO2014126147A1 true WO2014126147A1 (fr) 2014-08-21

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KR (1) KR20150119265A (fr)
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TW (1) TWI624914B (fr)
WO (1) WO2014126147A1 (fr)

Cited By (2)

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JPWO2016158760A1 (ja) * 2015-03-31 2017-06-22 東レ株式会社 電子部品用樹脂シート、保護フィルム付電子部品用樹脂シートならびに半導体装置およびその製造方法
US20210403765A1 (en) * 2018-11-14 2021-12-30 Nagase Chemtex Corporation Curable resin composition and curable sheet

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JP5976073B2 (ja) * 2014-11-07 2016-08-23 日東電工株式会社 半導体装置の製造方法
JP7257731B2 (ja) * 2016-12-28 2023-04-14 日東電工株式会社 樹脂シート
CN107403771A (zh) * 2017-08-21 2017-11-28 嘉盛半导体(苏州)有限公司 半导体封装结构及其封装方法

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WO2012020688A1 (fr) * 2010-08-12 2012-02-16 ダイセル化学工業株式会社 Composition de résine à faible perméabilité à l'humidité et matériau durci de celle-ci

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JP4150466B2 (ja) * 1998-06-02 2008-09-17 日東電工株式会社 半導体封止用樹脂組成物およびそれを用いた半導体装置ならびに半導体装置の製法
JP5426511B2 (ja) * 2009-11-30 2014-02-26 パナソニック株式会社 封止用エポキシ樹脂組成物シート及びこれを用いて封止した中空型デバイス
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JPH08255806A (ja) * 1995-03-17 1996-10-01 Toshiba Corp 樹脂封止型半導体装置の製造方法
JP2006032478A (ja) * 2004-07-13 2006-02-02 Nippon Steel Chem Co Ltd 半導体装置の製造方法
WO2007097022A1 (fr) * 2006-02-27 2007-08-30 Sumitomo Bakelite Co., Ltd. Film adhesif
WO2012020688A1 (fr) * 2010-08-12 2012-02-16 ダイセル化学工業株式会社 Composition de résine à faible perméabilité à l'humidité et matériau durci de celle-ci

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US20210403765A1 (en) * 2018-11-14 2021-12-30 Nagase Chemtex Corporation Curable resin composition and curable sheet
US11718770B2 (en) * 2018-11-14 2023-08-08 Nagase Chemtex Corporation Curable resin composition and curable sheet

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SG11201505837RA (en) 2015-09-29
JP6228734B2 (ja) 2017-11-08
TWI624914B (zh) 2018-05-21
TW201442166A (zh) 2014-11-01
CN105190867A (zh) 2015-12-23
KR20150119265A (ko) 2015-10-23
JP2014156516A (ja) 2014-08-28

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