TWI828076B - 切晶黏晶膜及其製造方法、以及半導體封裝及其製造方法 - Google Patents

切晶黏晶膜及其製造方法、以及半導體封裝及其製造方法 Download PDF

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TWI828076B
TWI828076B TW111108866A TW111108866A TWI828076B TW I828076 B TWI828076 B TW I828076B TW 111108866 A TW111108866 A TW 111108866A TW 111108866 A TW111108866 A TW 111108866A TW I828076 B TWI828076 B TW I828076B
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die
film
cut
mentioned
crystal
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TW111108866A
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TW202243038A (zh
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大谷洋多
丸山弘光
森田稔
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日商古河電氣工業股份有限公司
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Organic Chemistry (AREA)
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  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)

Abstract

本發明係一種切晶黏晶膜（dicing die attach film），其具有切晶膜、及積層在該切晶膜上之黏晶膜， 上述黏晶膜之與上述切晶膜相接之面之算術平均粗糙度Ra1為0.05～2.50 μm， 上述Ra1相對於上述黏晶膜之與上述切晶膜相接之面之相反側面的算術平均粗糙度Ra2之比值為1.05～28.00。

Description

切晶黏晶膜及其製造方法、以及半導體封裝及其製造方法
本發明係關於一種切晶黏晶膜（dicing die attach film）及其製造方法、以及半導體封裝及其製造方法。
近年來，多段積層半導體晶片而成之堆疊MCP（Multi Chip Package）已普及，且作為行動電話、攜帶影音機器用之記憶體封裝被搭載。又，隨著行動電話等之多功能化，封裝亦朝高密度化、高積體化方向進展。伴隨於此，半導體晶片之多段積層化進展。
此種記憶體封裝之製造過程中配線基板與半導體晶片之接著、或半導體晶片間之接著係使用膜狀接著劑（黏晶膜、固晶膜），且隨著晶片之多段積層化，對黏晶膜之薄型化之要求不斷提高。又，隨著晶圓配線規則之微細化而導致半導體元件表面容易發熱，為了使熱向封裝外部散出，對於黏晶膜之高導熱性之要求不斷提高。
例如於專利文獻1中記載有一種熱硬化型固晶膜，其特徵在於含有相對於熱硬化型固晶膜整體為75重量%以上之導熱率為12 W/m・K以上之導熱性粒子，且熱硬化型黏晶膜之一面之表面粗糙度Ra為200 nm以下。根據專利文獻1記載之技術，儘管熱硬化型固晶膜高度填充有導熱性粒子，仍然認為可使自積層於切晶片上之狀態剝離時之剝離力穩定。 又，於專利文獻2中記載有一種多層樹脂片，其具有樹脂組成物層、及接著材層，上述樹脂組成物層含有熱硬化性樹脂及填料，上述接著材層配置在上述樹脂組成物層之至少一面上，且與上述樹脂組成物層不對向之面之算術平均表面粗糙度Ra為1.5 μm以下。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2015-103580號公報 [專利文獻2]日本特開2019-014261號公報
[發明所欲解決之課題]
對於黏晶膜而言，通常將黏晶膜之一面貼附於半導體晶圓，使另一面與切晶膜密接，以切晶膜為基礎對半導體晶圓進行單片化（切晶）而製成半導體晶片，使用固晶裝置上之拾取筒夾（pick up collet），自切晶膜上將半導體晶片連同黏晶膜一起剝離（拾取），繼而將半導體晶片熱壓接合於配線基板上，藉此介隔黏晶膜將半導體晶片搭載於配線基板上。 於上述熱壓接合時拾取筒夾會蓄熱，且在反覆進行熱壓接合之過程中蓄熱量會增大。若在此種狀態下搭載後續之半導體晶片，則熱會經由黏晶膜傳遞至與切晶膜之界面。結果，出現在拾取時容易在切晶膜上殘留一部分黏晶膜之問題（所謂拾取不良）。黏晶膜之導熱性越高，該問題往往越為明顯。
本發明之課題在於提供一種切晶黏晶膜，其具有切晶膜、及積層在該切晶膜上之黏晶膜者，其在半導體裝置製造中之拾取步驟中即便拾取筒夾蓄熱，亦不易產生拾取不良。又，本發明之課題在於提供一種上述切晶黏晶膜之製造方法、使用上述切晶黏晶膜之半導體封裝及其製造方法。 [解決課題之技術手段]
本發明人鑒於上述課題而反覆進行了潛心研究，結果發現，藉由將黏晶膜與切晶膜之密接面之表面粗糙度、及該黏晶膜與半導體晶圓之密接面之表面粗糙度控制為特定關係，可獲得不易產生拾取不良之切晶黏晶膜。本發明係基於該等見解，進而反覆研究而完成。
本發明之上述課題係藉由下述手段而得以解決。 [1] 一種切晶黏晶膜，其具有切晶膜、及積層在該切晶膜上之黏晶膜， 上述黏晶膜之與上述切晶膜相接之面之算術平均粗糙度Ra1為0.05～2.50 μm， 上述Ra1相對於上述黏晶膜之與上述切晶膜相接之面之相反側面的算術平均粗糙度Ra2之比值為1.05～28.00。 [2] 如[1]記載之切晶黏晶膜，其中，上述黏晶膜含有環氧樹脂（A）、環氧樹脂硬化劑（B）、高分子成分（C）及無機填充材（D），且熱硬化後形成導熱率1.0 W/m・K以上之硬化體。 [3] 如[1]或[2]記載之切晶黏晶膜，其中，上述黏晶膜自25℃起以5℃/分鐘之升溫速度升溫時，於120℃時之熔融黏度達到500～10000 Pa・s之範圍。 [4] 如[1]至[3]中任一項記載之切晶黏晶膜，其中，上述切晶膜為能量線硬化性。 [5] 一種切晶黏晶膜之製造方法，其係[1]至[4]中任一項記載之切晶黏晶膜之製造方法，包括使用加壓輥使上述黏晶膜表面變得平坦，藉此製作滿足上述Ra1及上述Ra2之表面狀態。 [6] 一種半導體封裝，其係半導體晶片與配線基板、及/或半導體晶片間藉由接著劑之熱硬化體接著而成，且該接著劑源自[1]至[4]中任一項記載之切晶黏晶膜之黏晶膜。 [7] 一種半導體封裝之製造方法，其包括： 第1步驟，其將[1]至[4]中任一項記載之切晶黏晶膜以上述黏晶膜與半導體晶圓之背面相接之方式熱壓接合於表面形成有至少1個半導體電路之半導體晶圓之背面而設置； 第2步驟，其藉由將上述半導體晶圓及上述黏晶膜一體地進行切晶，而獲得切晶膜上具備黏晶膜片及半導體晶片之附接著劑層之半導體晶片； 第3步驟，其將上述附接著劑層之半導體晶片自上述切晶膜剝離，並介隔上述接著劑層將上述附接著劑層之半導體晶片與配線基板熱壓接合；及 第4步驟，其將上述接著劑層熱硬化。
於本發明中，使用「～」表示之數值範圍係指包含「～」前後所記載之數值作為下限值及上限值的範圍。 於本發明中，(甲基)丙烯酸係指丙烯酸及甲基丙烯酸之一者或兩者。(甲基)丙烯酸酯亦相同。 本發明中，為了方便起見，切晶黏晶膜之「上」「下」用語係使用切晶膜側作為「下」，使用黏晶膜側作為「上」。 [發明之效果]
本發明之切晶黏晶膜具有切晶膜、及積層在該切晶膜上之黏晶膜，該切晶黏晶膜於半導體裝置製造中之拾取步驟中即便拾取筒夾蓄熱亦不易產生拾取不良。本發明之切晶黏晶膜之製造方法係用以獲得上述本發明之切晶黏晶膜的適宜方法。又，本發明之半導體封裝係使用本發明之切晶黏晶膜所製造，於製造步驟中不易產生拾取不良，良品率優異。又，根據本發明之半導體封裝之製造方法，於製造步驟中不易產生拾取不良，可有效地提高半導體封裝之良率。
[切晶黏晶膜] 本發明之切晶黏晶膜具有切晶膜（黏著劑膜）、及積層在該切晶膜上之黏晶膜（接著劑膜）。切晶膜與黏晶膜係彼此相接地配置。本發明之切晶黏晶膜可製成如下形態，即，於基材（亦稱為基材膜）上依序地設置有切晶膜及黏晶膜。又，亦可於黏晶膜上設置剝離膜等。
當在本發明中僅稱為「切晶膜」時，意味著由黏著劑構成之膜本身。即，於切晶膜與基材膜或剝離膜（剝離襯墊、脫模膜）形成積層構造之情形時，該等基材膜或剝離膜可以視為與切晶膜不同之其他構成層。有時將切晶膜本身或使用切晶膜所形成之層稱為黏著劑層。 同樣地，當在本發明中僅稱為「黏晶膜」時，意味著由接著劑構成之膜本身。即，於黏晶膜與基材膜或剝離膜形成積層構造之情形時，該等基材膜或剝離膜可以視為與黏晶膜不同之其他構成層。有時將黏晶膜本身或使用黏晶膜所形成之層稱為接著劑層。 另一方面，本發明中用語「切晶黏晶膜」係以包括可作為製品在市場上流通之所有形態之含義來使用。即，並不限於由切晶膜及積層在該切晶膜上之黏晶膜所構成之2層構成的積層體，如上所述，於積層有基材膜或剝離膜、以及切晶膜及/或黏晶膜之情形時，將該等積層構造之整體視為「切晶黏晶膜」。
本發明之切晶黏晶膜中，黏晶膜之表面粗糙度得到了控制。即，上述黏晶膜被控制成如下形態，即，具有與上述切晶膜相接之面之算術平均粗糙度Ra（稱為Ra1）在0.05～2.50 μm之範圍之固定粗糙度，且上述Ra1相對於上述黏晶膜之與上述切晶膜相接之面之相反側面的算術平均粗糙度Ra（稱為Ra2）之比值（Ra1/Ra2）被控制在1.05～28.00之範圍。藉由如此控制黏晶膜之表面粗糙度，可於半導體裝置（半導體封裝）之製造中在切晶步驟後之拾取步驟中使黏晶膜不易在切晶膜上產生殘留。其結果為，可將單片化之黏晶膜片（接著劑層）與單片化之半導體晶片一體地自切晶膜剝離，從而可於其後將半導體晶片搭載於配線基板之過程中抑制空隙產生等接著不良。
基於更有效地防止拾取不良之觀點考慮，上述Ra1較佳為0.08 μm以上，更佳為0.10 μm以上，進而較佳為0.12 μm以上。又，基於更為提高切晶時與切晶膜之密接性之觀點考慮，上述Ra1較佳為2.30 μm以下，更佳為2.20 μm以下，進而較佳為2.10 μm以下，且亦較佳為設為2.00 μm以下。因此，上述Ra1較佳為0.08～2.30 μm，更佳為0.10～2.20 μm，更佳為0.12～2.10 μm，進而較佳為0.12～2.00 μm。 上述Ra2通常為0.03 μm以上，亦可為0.05 μm以上，亦可為0.06 μm以上，亦可為0.07 μm以上。又，基於與晶圓之密接性之觀點考慮，上述Ra2較佳為2.00 μm以下，更佳為1.50 μm以下，進而較佳為1.00 μm以下，進而較佳為0.50 μm以下，進而較佳為0.30 μm以下，亦較佳為設為0.20 μm以下，亦較佳為設為0.16 μm以下，亦較佳為設為未達0.10 μm，亦較佳為設為0.095 μm以下，亦較佳為設為0.09 μm以下。因此，上述Ra2較佳為0.03～2.00 μm，亦較佳為設為0.05～1.50 μm，亦較佳為設為0.06～1.00 μm，亦較佳為設為0.07～0.50 μm，亦較佳為設為0.07～0.30 μm，亦較佳為設為0.07～0.20 μm，亦較佳為設為0.07～0.16 μm。又，基於抑制貼合於晶圓時產生空隙以使晶圓密接性更為提高之觀點考慮，上述Ra2亦較佳為設為0.05 μm以上且未達0.10 μm，亦較佳為設為0.05～0.095 μm，亦較佳為設為0.06～0.09 μm。 關於上述Ra1相對於Ra2之比值（Ra1/Ra2），基於更有效地抑制拾取不良之觀點考慮，較佳為1.06以上，更佳為1.08以上，亦較佳為設為1.10以上，亦較佳為設為1.50以上，亦較佳為設為2.00以上，亦較佳為設為2.50以上，亦較佳為設為4.50以上，亦較佳為設為8.20以上，亦較佳為設為10.10以上。又，基於更確實地確保切晶時與切晶膜之充分密接性之觀點考慮，Ra1/Ra2較佳為25.00以下，更佳為20.00以下，進而較佳為18.00以下，亦較佳為設為15.00以下，亦較佳為設為12.00以下。因此，Ra1/Ra2較佳為1.06～25.00，更佳為1.08～20.00，更佳為1.10～18.00，亦較佳為設為1.50～15.00，亦較佳為設為2.00～12.00，亦較佳為設為2.50～12.00。Ra1/Ra2亦可設為4.50～27.00，亦較佳為設為8.20～27.00，亦較佳為設為10.10～27.00。 以下，當僅稱為「表面粗糙度」時，係指算術平均粗糙度。該算術平均粗糙度可藉由下述實施例中記載之方法來確定。
於本發明之切晶黏晶膜中，上述黏晶膜較佳為含有環氧樹脂（A）、環氧樹脂硬化劑（B）、高分子成分（C）及無機填充材（D）。依序對各成分進行說明。
＜環氧樹脂（A）＞ 上述環氧樹脂（A）係具有環氧基之熱硬化型樹脂，其環氧當量為500 g/eq以下。環氧樹脂（A）可為液體、固體或半固體之任一者。於本發明中，液體係指軟化點未達25℃，固體係指軟化點為60℃以上，半固體係指軟化點處於上述液體之軟化點與固體之軟化點之間（25℃以上且未達60℃）。作為本發明中使用之環氧樹脂（A），基於獲得於合適的溫度範圍（例如60～120℃）內能夠達到低熔融黏度之黏晶膜之觀點考慮，較佳為軟化點為100℃以下。再者，於本發明中，軟化點係藉由ASTM法（測定條件：依據ASTM D6090-17）所測得之值。
本發明中使用之環氧樹脂（A）中，基於「硬化體之交聯密度較高，結果所摻合之無機填充材（D）彼此之接觸概率較高而使接觸面積變大，由此可獲得更高之導熱率」之觀點考慮，環氧當量較佳為150～450 g/eq。再者，於本發明中，環氧當量係指含有1克當量環氧基之樹脂之克數（g/eq）。 環氧樹脂（A）之質量平均分子量通常較佳為未達10,000，更佳為5,000以下。下限值並無特別限制，實際上為300以上。 質量平均分子量係藉由GPC（Gel Permeation Chromatography）分析所得之值。
作為環氧樹脂（A）之骨架，可列舉：苯酚酚醛清漆型、鄰甲酚酚醛清漆型、甲酚酚醛清漆型、二環戊二烯型、聯苯型、茀雙酚型、三型、萘酚型、萘二酚型、三苯甲烷型、四苯基型、雙酚A型、雙酚F型、雙酚AD型、雙酚S型、三羥甲基甲烷型等。其中，基於樹脂之結晶性較低、可獲得具有良好外觀之黏晶膜之觀點考慮，較佳為三苯甲烷型、雙酚A型、甲酚酚醛清漆型、鄰甲酚酚醛清漆型。
環氧樹脂（A）之含量於上述黏晶膜中，較佳為3～70質量%，較佳為3～30質量%，更佳為5～30質量%。藉由使含量處於上述較佳範圍內，能夠抑制形成治具痕跡並且提高黏晶性。又，藉由設為上述較佳之上限值以下，能夠抑制低聚物成分之生成，且於溫度稍微變化時，膜狀態（膜膠黏性（tackiness）等）不易發生變化。
＜環氧樹脂硬化劑（B）＞ 作為上述環氧樹脂硬化劑（B），可使用胺類、酸酐類、多酚類等任意之硬化劑。於本發明中，基於「製成低熔融黏度且於超過一定溫度之高溫時發揮硬化性、具有快速硬化性、進而於室溫能夠長期保存之保存穩定性較高的黏晶膜」之觀點考慮，較佳為使用潛伏性硬化劑。 作為潛伏性硬化劑，可列舉二氰二胺化合物、咪唑化合物、硬化觸媒複合系多酚化合物、醯肼化合物、三氟化硼-胺錯合物、胺醯亞胺化合物、聚胺鹽、及該等之改質物或將該等製成微膠囊型後所得者。該等可單獨使用一種，或者將兩種以上組合使用。基於具有更優異之潛伏性（於室溫之穩定性優異且藉由加熱而發揮硬化性之性質）、硬化速度更快之觀點考慮，更佳為使用咪唑化合物。
相對於環氧樹脂（A）100質量份，環氧樹脂硬化劑（B）之含量較佳為0.5～100質量份，更佳為1～80質量份，進而較佳為2～50質量份，進而較佳為4～20質量份。藉由將含量設為上述較佳之下限值以上，能夠進一步縮短硬化時間，另一方面，藉由設為上述較佳之上限值以下，能夠抑制過剩之硬化劑殘留於黏晶膜中。結果，能夠抑制殘留硬化劑吸附水分，實現半導體裝置之可靠性之提高。
＜高分子成分（C）＞ 作為上述高分子成分（C），只要為在形成黏晶膜時抑制於常溫（25℃）之膜膠黏性（溫度稍有變化，膜狀態便易發生變化之性質）並賦予充分之接著性及造膜性（膜形成性）之成分即可。可列舉：天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍或6,6-尼龍等聚醯胺樹脂、苯氧基樹脂、(甲基)丙烯酸樹脂、聚對苯二甲酸乙二酯及聚對苯二甲酸丁二酯等聚酯樹脂、聚醯胺醯亞胺樹脂或氟樹脂等。該等高分子化合物（C）可單獨使用，又，亦可組合兩種以上使用。 高分子成分（C）之質量平均分子量通常為10000以上。上限值並無特別限制，實際上為5000000以下。 上述高分子成分（C）之質量平均分子量係利用GPC[凝膠滲透層析法（Gel Permeation Chromatography）]並以聚苯乙烯換算所求出之值。下文中，具體之高分子成分（C）之質量平均分子量之值的含義亦相同。 又，上述高分子成分（C）之玻璃轉移溫度（Tg）較佳為未達100℃，更佳為未達90℃。下限較佳為-30℃以上，亦較佳為0℃以上，更佳為10℃以上。 上述高分子成分（C）之玻璃轉移溫度係以升溫速度0.1℃/分鐘，藉由DSC所測得之玻璃轉移溫度。下文中，具體之高分子成分（C）之玻璃轉移溫度之值的含義亦相同。 再者，本發明中，關於環氧樹脂（A）與高分子成分（C）中苯氧基樹脂等可具有環氧基之樹脂，環氧當量為500 g/eq以下之樹脂被分類為環氧樹脂（A），不符合該範圍者被分類為成分（C）。
作為上述高分子成分（C），較佳為使用至少1種苯氧基樹脂，上述高分子成分（C）亦較佳為苯氧基樹脂。苯氧基樹脂由於結構與環氧樹脂（A）類似，故而相容性良好，且樹脂熔融黏度亦較低，可發揮接著性亦優異之效果。又，苯氧基樹脂基於「耐熱性較高，飽和吸水率較小，確保半導體封裝之可靠性」之觀點考慮亦較佳。進而，基於消除於常溫之膠黏性、脆性等方面考慮亦較佳。
苯氧基樹脂可藉由雙酚或者聯苯酚化合物與表氯醇之類之表鹵醇（epihalohydrin）之反應、液狀環氧樹脂與雙酚或者聯苯酚化合物之反應而獲得。 於任一反應中，作為雙酚或者聯苯酚化合物，均較佳為下述通式（A）所表示之化合物。
於通式（A）中，L a表示單鍵或2價連結基，R al及R a2各自獨立地表示取代基。ma及na各自獨立地表示整數0～4。
L a中，2價連結基較佳為伸烷基、伸苯基、-O-、-S-、-SO-、-SO 2-、或伸烷基與伸苯基組合而成之基。 伸烷基之碳數較佳為1～10，更佳為1～6，進而較佳為1～3，尤佳為1或2，最佳為1。 伸烷基較佳為-C(R α)(R β)-，此處，R α及R β各自獨立地表示氫原子、烷基、芳基。R α與R β亦可相互鍵結而形成環。R α及R β較佳為氫原子或烷基（例如，甲基、乙基、異丙基、正丙基、正丁基、異丁基、己基、辛基、2-乙基己基）。伸烷基中，較佳為-CH 2-、-CH(CH 3)、-C(CH 3) 2-，更佳為-CH 2-、-CH(CH 3)，進而較佳為-CH 2-。
伸苯基之碳數較佳為6～12，更佳為6～8，進而較佳為6。作為伸苯基，例如可列舉對伸苯基、間伸苯基、鄰伸苯基，較佳為對伸苯基、間伸苯基。 作為伸烷基與伸苯基組合而成之基，較佳為伸烷基-伸苯基-伸烷基，更佳為-C(R α)(R β)-伸苯基-C(R α)(R β)-。 R α與R β鍵結而形成之環較佳為五員環或六員環，更佳為環戊烷環、環己烷環，進而較佳為環己烷環。
L a較佳為單鍵或伸烷基、-O-、-SO 2-，更佳為伸烷基。
R a1及R a2較佳為烷基、芳基、烷氧基、烷硫基、鹵素原子，更佳為烷基、芳基、鹵素原子，進而較佳為烷基。
ma及na較佳為0～2，更佳為0或1，進而較佳為0。
作為雙酚或者聯苯酚化合物，例如可列舉：雙酚A、雙酚AD、雙酚AP、雙酚AF、雙酚B、雙酚BP、雙酚C、雙酚E、雙酚F、雙酚G、雙酚M、雙酚S、雙酚P、雙酚PH、雙酚TMC、雙酚Z、或4,4'-聯苯酚、2,2'-二甲基-4,4'-聯苯酚、2,2',6,6'-四甲基-4,4'-聯苯酚、卡多（Cardo）骨架型雙酚等，較佳為雙酚A、雙酚AD、雙酚C、雙酚E、雙酚F、4,4'-聯苯酚，更佳為雙酚A、雙酚E、雙酚F，尤佳為雙酚A。
作為上述液狀環氧樹脂，較佳為脂肪族二醇化合物之二環氧丙基醚，更佳為下述通式（B）所表示之化合物。
於通式（B）中，X表示伸烷基，nb表示整數1～10。
伸烷基之碳數較佳為2～10，更佳為2～8，進而較佳為3～8，尤佳為4～6，最佳為6。 作為伸烷基，例如可列舉：伸乙基、伸丙基、伸丁基、伸戊基、伸己基、伸辛基，較佳為伸乙基、三亞甲基、四亞甲基、五亞甲基、七亞甲基、六亞甲基、八亞甲基。
nb較佳為1～6，更佳為1～3，進而較佳為1。
此處，於nb為2～10之情形時，X較佳為伸乙基或伸丙基，進而較佳為伸乙基。
作為二環氧丙基醚中之脂肪族二醇化合物，可列舉：乙二醇、丙二醇、二乙二醇、三乙二醇、聚乙二醇、1,3-丙二醇、1,4-丁二醇、1,5-庚二醇、1,6-己二醇、1,7-戊二醇、1,8-辛二醇。
於上述反應中，雙酚或聯苯酚化合物、脂肪族二醇化合物可各自單獨地進行反應而獲得苯氧基樹脂，亦可為混合2種以上並進行反應而獲得苯氧基樹脂。例如可列舉：使1,6-己二醇之二環氧丙基醚、與雙酚A及雙酚F之混合物之反應。
苯氧基樹脂於本發明中，較佳為藉由使液狀環氧樹脂與雙酚或者聯苯酚化合物進行反應而獲得之苯氧基樹脂，更佳為具有下述通式（I）所表示之重複單元之苯氧基樹脂。
於通式（I）中，L a、R a 1、R a 2、ma及na分別與通式（A）中之L a、R a1、R a2、ma及na同義，較佳範圍亦相同。X及nb分別與通式（B）中之X及nb同義，較佳範圍亦相同。
於本發明中，其中較佳為雙酚A與1,6-己二醇之二環氧丙基醚之聚合物。 若著眼於苯氧基樹脂之骨架，於本發明中，可較佳地使用雙酚A型苯氧基樹脂、雙酚A-F型共聚型苯氧基樹脂。又，可較佳地使用低彈性高耐熱型苯氧基樹脂。
苯氧基樹脂之質量平均分子量較佳為10000以上，更佳為10000～100000。 又，苯氧基樹脂中少量殘留之環氧基之量以環氧當量計，較佳為超過5000 g/eq。
苯氧基樹脂之玻璃轉移溫度（Tg）較佳為未達100℃，更佳為未達90℃。下限較佳為0℃以上，更佳為10℃以上。
苯氧基樹脂可藉由如上所述之方法合成，又，亦可使用市售品。作為市售品，例如可列舉：1256（雙酚A型苯氧基樹脂，三菱化學（股）製造）、YP-50（雙酚A型苯氧基樹脂，NSCC Epoxy Manufacturing（股）製造）、YP-70（雙酚A/F型苯氧基樹脂，NSCC Epoxy Manufacturing（股）製造）、FX-316（雙酚F型苯氧基樹脂，NSCC Epoxy Manufacturing（股）製造）、及FX-280S（卡多骨架型苯氧基樹脂，NSCC Epoxy Manufacturing（股）製造）、4250（雙酚A型/F型苯氧基樹脂，三菱化學（股）製造）、FX-310（低彈性高耐熱型苯氧基樹脂，NSCC Epoxy Manufacturing（股）製造）等。
作為上述高分子成分（C），亦較佳為使用至少1種(甲基)丙烯酸樹脂，上述高分子成分（C）亦較佳為(甲基)丙烯酸樹脂。作為(甲基)丙烯酸樹脂，可使用適用於黏晶膜之公知之由(甲基)丙烯酸共聚物所構成之樹脂。 (甲基)丙烯酸共聚物之質量平均分子量較佳為10000～2000000，更佳為100000～1500000。藉由使上述質量平均分子量為上述較佳範圍內，可降低膠黏性，亦可抑制熔融黏度上升。 (甲基)丙烯酸共聚物之玻璃轉移溫度較佳為-10℃～50℃，更佳為0℃～40℃，進而較佳為處於0℃～30℃之範圍內。藉由使上述玻璃轉移溫度為上述較佳範圍內，可降低膠黏性，可抑制於半導體晶圓與黏晶膜之間等處產生空隙。
作為上述(甲基)丙烯酸樹脂，可列舉：含有(甲基)丙烯酸酯成分作為聚合物之構成成分的共聚物。作為(甲基)丙烯酸樹脂之構成成分，例如可列舉源自丙烯酸2-羥基乙酯、甲基丙烯酸2-羥基乙酯、丙烯酸2-羥基丙酯、甲基丙烯酸2-羥基丙酯、丙烯酸、甲基丙烯酸、伊康酸、甲基丙烯酸環氧丙酯、丙烯酸環氧丙酯等之成分。又，(甲基)丙烯酸樹脂亦可具有含有環狀骨架之(甲基)丙烯酸酯（例如，(甲基)丙烯酸環烷基酯、(甲基)丙烯酸苄酯、(甲基)丙烯酸異莰酯、(甲基)丙烯酸雙環戊酯、(甲基)丙烯酸二環戊烯酯及(甲基)丙烯酸二環戊烯氧基乙酯）成分作為構成成分。又，亦可具有(甲基)丙烯酸醯亞胺酯（imide(meth)acrylate）成分、烷基之碳數為1～18之(甲基)丙烯酸烷基酯（例如，(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯及(甲基)丙烯酸丁酯等）成分。又，亦可為與乙酸乙烯酯、(甲基)丙烯腈、苯乙烯等之共聚物。又，若具有羥基，則與環氧樹脂之相容性良好，故而較佳。
黏晶膜中，高分子成分（C）之含量相對於環氧樹脂（A）之含量100質量份，較佳為1～40質量份，更佳為5～35質量份，進而較佳為7～30質量份。藉由使含量為上述範圍，可使熱硬化前之黏晶膜之剛性與柔軟性取得平衡，而使得膜狀態變得良好（膜膠黏性降低），且亦抑制膜脆弱性。
＜無機填充材（D）＞ 無機填充材（D）可使用黏晶膜通常可以使用之無機填充材，並無特別限制。 作為無機填充材（D），例如可列舉：二氧化矽、黏土、石膏、碳酸鈣、硫酸鋇、礬土（氧化鋁）、氧化鈹、氧化鎂、碳化矽、氮化矽、氮化鋁、氮化硼等陶瓷類；鋁、銅、銀、金、鎳、鉻、鉛、錫、鋅、鈀、焊料等金屬或合金類；奈米碳管、石墨烯等碳類等各種無機粉末。
無機填充材（D）之平均粒徑（d50）並無特別限定，基於抑制形成治具痕跡並且提高黏晶性之觀點考慮，較佳為0.01～6.0 μm，較佳為0.01～5.0 μm，更佳為0.1～3.5 μm。平均粒徑（d50）係所謂中值粒徑，係指藉由雷射繞射散射法測定粒度分佈，於累積分佈中以粒子之總體積作為100%時累積達到50%時之粒徑。關於上述黏晶膜之一態樣，於著眼於無機填充材（D）之情形時，包含平均粒徑（d50）為0.1～3.5 μm之無機填充材。又，另一較佳態樣包含平均粒徑（d50）超過3.5 μm之無機填充材。
無機填充材之莫氏硬度並無特別限定，基於抑制產生治具痕跡並且提高黏晶性之觀點考慮，較佳為2以上，更佳為2～9。莫氏硬度可利用莫氏硬度計進行測定。
上述無機填充材（D）可以為包括具有導熱性之無機填充材（導熱率為12 W/m・K以上之無機填充材）之態樣，亦可為包括不具有導熱性之無機填充材（導熱率未達12 W/m・K之無機填充材）之態樣。 具有導熱性之無機填充材（D）係由導熱性材料所構成之粒子或表面由導熱性材料被覆之粒子，該等導熱性材料之導熱率較佳為12 W/m・K以上，更佳為30 W/m・K以上。 若上述導熱性材料之導熱率為上述較佳之下限值以上，則能夠減少為了獲得目標導熱率而摻合之無機填充材（D）之量，而黏晶膜之熔融黏度上升得到抑制，於壓接於基板時能夠更為提高嵌埋於基板凹凸部中之嵌埋性。結果，能夠更確實地抑制產生空隙。 於本發明中，上述導熱性材料之導熱率係指於25℃時之導熱率，可使用各材料之文獻值。於文獻中無記載之情形時，例如若為陶瓷，則可代用基於JIS R 1611測定之值，若為金屬，則可代用基於JIS H 7801測定之值。
作為具有導熱性之無機填充材（D），例如可列舉導熱性之陶瓷，可較佳地列舉氧化鋁粒子（導熱率：36 W/m・K）、氮化鋁粒子（導熱率：150～290 W/m・K）、氮化硼粒子（導熱率：60 W/m・K）、氧化鋅粒子（導熱率：54 W/m・K）、氮化矽填料（導熱率：27 W/m・K）、碳化矽粒子（導熱率：200 W/m・K）及氧化鎂粒子（導熱率：59 W/m・K）。 尤其是，氧化鋁粒子具有高導熱率，於分散性、容易獲取之方面而言較佳。又，基於具有較氧化鋁粒子更高之導熱率之觀點考慮，較佳為氮化鋁粒子或氮化硼粒子。於本發明中，尤佳為氧化鋁粒子及氮化鋁粒子。 又，亦可列舉具有較陶瓷高之導熱性之金屬粒子、或表面由金屬被覆之粒子。例如可較佳地列舉：銀（導熱率：429 W/m・K）、鎳（導熱率：91 W/m・K）及金（導熱率：329 W/m・K）等單質金屬填料、或表面由該等金屬被覆之丙烯酸樹脂或聚矽氧樹脂等高分子粒子。 本發明中，基於高導熱率及耐氧化劣化之觀點考慮，更佳為金或銀粒子等。
無機填充材（D）亦可進行表面處理或表面改質，作為此種表面處理或表面改質，可列舉：矽烷偶合劑、磷酸或磷酸化合物、及界面活性劑，除本說明書中記載之事項以外，還適用例如國際公開第2018/203527號中之導熱填料之項或國際公開第2017/158994號之氮化鋁填充材之項中的矽烷偶合劑、磷酸或磷酸化合物及界面活性劑之記載。
作為於環氧樹脂（A）、環氧樹脂硬化劑（B）及高分子成分（C）等樹脂成分中摻合無機填充材（D）之方法，可使用：直接摻合粉體狀之無機填充材與視需要之矽烷偶合劑、磷酸或磷酸化合物、界面活性劑之方法（整體摻合法（integral blend methoh））；或摻合使經矽烷偶合劑、磷酸或磷酸化合物、界面活性劑等表面處理劑處理之無機填充材分散於有機溶劑中而成之漿料狀無機填充材的方法。 又，藉由矽烷偶合劑對無機填充材（D）進行處理之方法並無特別限定，可列舉：於溶劑中混合無機填充材（D）與矽烷偶合劑之濕式法；於氣相中混合無機填充材（D）與矽烷偶合劑之乾式法；上述整體摻合法等。
尤其是氮化鋁粒子雖有助於高導熱化，但容易因水解而生成銨離子，因此，較佳為與吸濕率較小之酚樹脂併用或藉由表面改質來抑制水解。作為氮化鋁之表面改質方法，尤佳為於表面層設置氧化鋁之氧化物層以提高耐水性、利用磷酸或磷酸化合物進行表面處理以提高與樹脂之親和性的方法。
矽烷偶合劑係矽原子上鍵結有至少一個烷氧基、芳氧基之類之水解性基者，除此以外，還可鍵結有烷基、烯基、芳基。烷基較佳為經胺基、烷氧基、環氧基、(甲基)丙烯醯氧基取代者，更佳為經胺基（較佳為苯基胺基）、烷氧基（較佳為環氧丙氧基）、(甲基)丙烯醯氧基取代者。 作為矽烷偶合劑，例如可列舉：2-(3,4-環氧環己基)乙基三甲氧基矽烷、3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷、3-環氧丙氧基丙基甲基二甲氧基矽烷、3-環氧丙氧基丙基甲基二乙氧基矽烷、二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、甲基三甲氧基矽烷、甲基三乙氧基矽烷、苯基三甲氧基矽烷、苯基三乙氧基矽烷、N-苯基-3-胺基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二乙氧基矽烷、3-甲基丙烯醯氧基丙基三乙氧基矽烷等。
相對於無機填充材（D）100質量份，矽烷偶合劑或界面活性劑較佳為含有0.1～25.0質量份，更佳為含有0.1～10質量份，進而較佳為含有0.1～2.0質量份。 藉由將矽烷偶合劑或界面活性劑之含量設為上述較佳範圍，能夠抑制無機填充材（D）之凝集，同時抑制過剩之矽烷偶合劑或界面活性劑在半導體組裝加熱步驟（例如回焊（reflow）步驟）中揮發所導致的接著界面處之剝離，空隙之產生得到抑制，而能夠提高黏晶性。
關於無機填充材（D）之形狀，可列舉片（flake）狀、針狀、絲狀、球狀、鱗片狀，基於高填充化及流動性之觀點考慮，較佳為球狀粒子。
上述黏晶膜中，無機填充材（D）於環氧樹脂（A）、環氧樹脂硬化劑（B）、高分子成分（C）及無機填充材（D）之各含量之合計中所占之比率較佳為5～70體積%。若上述無機填充材（D）之含有比率為上述下限值以上，則能夠抑制黏晶膜產生治具痕跡，並且提高黏晶性。進而，有時能夠賦予所期望之熔融黏度。又，若為上述上限值以下，則能夠賦予黏晶膜所期望之熔融黏度，能夠抑制空隙之產生。又，有時亦能夠緩和熱變化時於半導體封裝中產生之內部應力，亦能夠提高接著力。 無機填充材（D）於環氧樹脂（A）、環氧樹脂硬化劑（B）、高分子成分（C）及無機填充材（D）之各含量之合計中所占之比率較佳為10～70體積%，更佳為20～60體積%，進而較佳為20～55體積%。 上述無機填充材（D）之含量（體積%）可根據環氧樹脂（A）、環氧樹脂硬化劑（B）、高分子成分（C）及無機填充材（D）之含有質量與比重來算出。 上述黏晶膜之較佳形態係如下形態，即，無機填充材（D）之平均粒徑（d50）為0.01～5.0 μm，且無機填充材（D）於環氧樹脂（A）、環氧樹脂硬化劑（B）、高分子成分（C）及無機填充材（D）之各含量之合計中所占之比率為5～70體積%。
＜其他成分＞ 上述黏晶膜亦可進而含有有機溶劑（甲基乙基酮等）、離子捕捉劑（Ion trapping agent）、硬化觸媒、黏度調整劑、抗氧化劑、難燃劑、著色劑等。例如，可包含國際公開第2017/158994號之其他添加物。
環氧樹脂（A）、環氧樹脂硬化劑（B）、高分子成分（C）及無機填充材（D）之各含量之合計於上述黏晶膜中所占之比率例如可設為60質量%以上，較佳為70質量%以上，進而較佳為80質量%以上，亦可設為90質量%以上。又，上述比率可為100質量%，亦可設為95質量%以下。
繼而，對構成本發明之切晶黏晶膜之黏晶膜之較佳特性進行說明。
＜黏晶膜之特性＞ -熱硬化後之導熱率- 本發明所使用之黏晶膜於熱硬化後，導熱率較佳為0.8 W/m・K以上，更佳為1.0 W/m・K以上，更佳為1.4 W/m・K以上。藉由使黏晶膜於熱硬化後發揮上述導熱性，可獲得向半導體封裝外部之散熱效率優異之半導體封裝。 導熱率之上限並無特別限定，通常為30 W/m・K以下。 此處，測定導熱率時之所謂熱硬化後，係指黏晶膜之硬化完成之狀態。具體而言，係指以升溫速度10℃/分鐘進行DSC（示差掃描熱量計）測定時不再出現反應熱波峰之狀態。 本發明中，此種熱硬化後之黏晶膜之導熱率係指使用導熱率測定裝置（商品名：HC-110、英弘精機(股)製造），藉由熱流計法（依據JIS-A1412）測定導熱率所得之值。具體而言，可參照實施例中記載之測定方法。 為了將導熱率設為上述範圍，例如可藉由調整無機填充機（D）之種類、含量等來進行控制。
-熔融黏度- 基於提昇黏晶性之觀點考慮，上述黏晶膜較佳為將熱硬化前之黏晶膜自25℃起以5℃/分鐘之升溫速度升溫時，120℃之範圍內之熔融黏度處於500～10000 Pa・s之範圍內，更佳為處於1000～10000 Pa・s之範圍內，進而較佳為處於1500～9200 Pa・s之範圍內。 熔融黏度可藉由下述實施例中記載之方法來確定。
繼而，對黏晶膜之形成方法進行說明。
＜黏晶膜之形成＞ 關於上述黏晶膜，可以製備含有黏晶膜之構成成分之黏晶膜形成用組成物（清漆），將該組成物塗佈於例如經脫模處理之剝離膜上，進行乾燥而形成。黏晶膜形成用組成物通常含有溶劑。 黏晶膜之厚度較佳為200 μm以下，更佳為100 μm以下，進而較佳為50 μm以下，亦較佳為設為30 μm以下，亦較佳為設為20 μm以下。黏晶膜之厚度通常為1 μm以上，亦較佳為設為2 μm以上，亦可設為4 μm以上。 黏晶膜之厚度可藉由接觸式線性規方式（桌上型接觸式厚度計測裝置）進行測定。 作為經脫模處理之剝離膜，只要發揮出作為所獲得之黏晶膜之覆蓋膜的功能即可，可適當採用公知者。例如可列舉：經脫模處理之聚丙烯（PP）、經脫模處理之聚乙烯（PE）、經脫模處理之聚對苯二甲酸乙二酯（PET）。作為塗佈方法，可適當採用公知方法，例如可列舉使用輥刀塗佈機、凹版塗佈機、模嘴塗佈機、反向塗佈機等之方法。 關於乾燥，只要能夠不使環氧樹脂（A）硬化，自接著劑用組成物去除有機溶劑而製成黏晶膜即可，例如可藉由於80～150℃之溫度保持1～20分鐘來進行乾燥。
於上述黏晶膜之形成中，如上所述，將與切晶膜相接之面之算術平均粗糙度Ra（Ra1）設為0.05～2.50 μm。Ra1之控制方法並無特別限制，例如可藉由使用加壓輥使黏晶膜表面平坦而將Ra1控制在所需範圍內。作為加壓輥，亦可使用表面粗糙度得到控制之加壓輥。 又，於上述黏晶膜之形成中，對Ra2進行控制以使上述Ra1相對於上述與切晶膜相接之面之相反側面之算術平均粗糙度Ra（Ra2）的比值（Ra1/Ra2）達到1.05～28.00。關於Ra2，視需要亦可藉由使用加壓輥使黏晶膜表面平坦而將Ra2控制在所需範圍內。作為加壓輥，亦可使用表面粗糙度得到控制之加壓輥。 上述Ra1、Ra2、及Ra1/Ra2之較佳範圍如上所述。
＜切晶膜＞ 構成本發明之切晶黏晶膜之切晶膜可適當應用可用作切晶膜（切晶帶）之一般構成。又，關於切晶膜之形成方法，亦可適當應用通常方法。作為構成切晶膜之黏著劑，可適當使用切晶膜用途中可使用之一般黏著劑、例如丙烯酸系黏著劑、橡膠系黏著劑等。其中，切晶膜較佳為能量線硬化性。
作為上述丙烯酸系黏著劑，例如可列舉：由(甲基)丙烯酸及(甲基)丙烯酸酯之共聚物所構成之樹脂。又，作為上述丙烯酸系黏著劑，亦較佳為由(甲基)丙烯酸、(甲基)丙烯酸酯、及能夠與該等共聚之不飽和單體（例如乙酸乙烯酯、苯乙烯、丙烯腈等）之共聚物所構成之樹脂。又，亦可將2種以上之該等樹脂加以混合。其中，較佳為選自(甲基)丙烯酸甲酯、(甲基)丙烯酸乙基己酯及(甲基)丙烯酸丁酯中之1種以上、與選自(甲基)丙烯酸羥基乙酯及乙酸乙烯酯中之1種以上的共聚物。藉此，容易控制與被接著體之密接性、黏著性。
為了使本發明所使用之切晶膜具有能量線硬化性，可向構成切晶膜之聚合物中導入聚合性基（例如碳-碳不飽和鍵），或於切晶膜中摻合聚合性單體。該聚合性單體較佳為具有2個以上（較佳為3個以上）之聚合性基。 作為能量線，例如可列舉：紫外線、電子束等。
作為本發明所使用之切晶膜之構成，例如可參照日本特開2010-232422號公報、日本專利第2661950號公報、日本特開2002-226796號公報、日本特開2005-303275號公報等。
切晶膜之厚度較佳為1～200 μm，更佳為2～100 μm，進而較佳為3～50 μm，亦較佳設為5～30 μm。
本發明之切晶黏晶膜中，切晶膜與黏晶膜之間之於25～80℃之範圍內的剝離力較佳為0.40 N/25 mm以下。於切晶膜為能量線硬化性之情形時，該剝離力係照射能量線後之切晶膜與黏晶膜之間的剝離力。 上述剝離力係根據以下條件來確定。 測定條件：依據JISZ0237，180°剝離試驗 測定裝置：拉伸試驗機（島津製作所製造，型號：TCR1L型）
＜切晶黏晶膜之製作＞ 本發明之切晶黏晶膜之製作方法並無特別限制，只要可製成積層有切晶膜及黏晶膜之構造即可。 例如，於經脫模處理之剝離襯墊上塗佈含有黏著劑之塗佈液並進行乾燥，藉此形成切晶膜，將切晶膜與基材膜加以貼合，藉此獲得依序積層有基材膜、切晶膜、剝離襯墊之積層體。另外，於剝離膜（雖與剝離襯墊同義，但為了方便起見，此處改變表達方式）上塗佈黏晶膜形成用組成物並進行乾燥，從而於剝離膜上形成黏晶膜。繼而，使將剝離襯墊剝離後露出之切晶膜與黏晶膜相接，從而貼合切晶膜與黏晶膜，藉此可獲得依序積層有基材膜、切晶膜、黏晶膜、剝離膜之切晶黏晶膜。 上述切晶膜與黏晶膜之貼合較佳為於加壓條件下來進行。 於上述切晶膜與黏晶膜之貼合中，切晶膜之形狀並無特別限制，只要可覆蓋環狀框之開口部即可，較佳為圓形狀，黏晶膜之形狀並無特別限制，只要可覆蓋晶圓之背面即可，較佳為圓形狀。切晶膜較佳為大於黏晶膜，在將該等貼合並自黏晶膜側進行觀察時，呈具有在黏晶膜（接著劑層）之周圍切晶膜（黏著劑層）露出之部分的形狀。如上所述，較佳為貼合剪切成所需形狀之切晶膜及黏晶膜。 以上述方式製作之切晶黏晶膜在使用時，係將剝離膜剝離後再使用。
[半導體封裝及其製造方法] 繼而，一面參照圖式，一面對本發明之半導體封裝及其製造方法之較佳實施方式進行詳細說明。再者，於以下之說明及圖式中，對相同或相當之要素附上相同之符號，並省略重複說明。圖1～圖7係表示本發明之半導體封裝之製造方法之各步驟的較佳一實施方式之概略縱剖視圖。
於本發明之半導體封裝之製造方法中，首先，作為第1步驟，如圖1所示，於表面形成有至少一個半導體電路之半導體晶圓1之背面（即，半導體晶圓1之未形成半導體電路之面），熱壓接合本發明之切晶黏晶膜之黏晶膜2一側，而於半導體晶圓1上設置黏晶膜2及切晶膜3。圖1中顯示黏晶膜2小於切晶膜3，但兩個膜之大小（面積）係根據目的適當地設定。關於熱壓接合之條件，係於環氧樹脂（A）實際不會熱硬化之溫度進行熱壓接合。例如可列舉：70℃左右且壓力0.3 MPa左右之條件。 作為半導體晶圓1，可適當使用表面形成有至少一個半導體電路之半導體晶圓，例如，可列舉矽晶圓、SiC晶圓、GaAs晶圓、GaN晶圓。為了將本發明之切晶黏晶膜設置於半導體晶圓1之背面，例如可適當使用輥貼合機、手動貼合機之類之公知裝置。
繼而，作為第2步驟，如圖2所示，將半導體晶圓1與黏晶膜2一體地進行切晶，藉此獲得於切晶膜3上具備半導體晶圓經單片化後而成之半導體晶片4、及黏晶膜2經單片化後而成之黏晶膜片2（接著劑層2）的附接著劑層之半導體晶片5。切晶裝置並無特別限制，可適當使用通常之切晶裝置。
繼而，作為第3步驟，根據需要利用能量線使切晶膜硬化以降低黏著力，藉由拾取而將接著劑層2自切晶膜3剝離。繼而，如圖3所示，介隔接著劑層2而將附接著劑層之半導體晶片5與配線基板6熱壓接合，從而於配線基板6上安裝附接著劑層之半導體晶片5。作為配線基板6，可適當使用表面上形成有半導體電路之基板，例如可列舉：印刷電路基板（PCB）、各種引線框架、及於基板表面搭載有電阻元件或電容器等電子零件之基板。 作為此種於配線基板6上安裝附接著劑層之半導體晶片5之方法，並無特別限制，可適當採用先前利用熱壓接合進行之安裝方法。
繼而，作為第4步驟，使接著劑層2熱硬化。作為熱硬化之溫度，並無特別限制，只要為接著劑層2之熱硬化起始溫度以上即可，並可以根據所使用之環氧樹脂（A）、高分子成分（C）及環氧樹脂硬化劑（B）之種類來適當調整。例如較佳為100～180℃，基於在更短時間內硬化之觀點考慮，更佳為140～180℃。若溫度過高，則有於硬化過程中接著劑層2中之成分揮發而導致容易發泡之趨勢。該熱硬化處理之時間只要根據加熱溫度適當地設定即可，例如可設為10～120分鐘。
於本發明之半導體封裝之製造方法中，較佳為如圖4所示，經由接合線7將配線基板6與附接著劑層之半導體晶片5連接。此種連接方法並無特別限制，可適當採用以往公知之方法，例如打線接合方式之方法、TAB（Tape Automated Bonding）方式之方法等。
又，亦可在所搭載之半導體晶片4之表面熱壓接合另一半導體晶片4並進行熱硬化，再次以打線接合方式與配線基板6連接，藉此積層複數層。例如，有如圖5所示般使半導體晶片錯開來進行積層之方法，或如圖6所示般增加第2層以後之接著劑層2之厚度，藉此一面嵌埋接合線7一面進行積層之方法等。
於本發明之半導體封裝之製造方法中，較佳為如圖7所示，利用密封樹脂8將配線基板6與附接著劑層之半導體晶片5進行密封，如此可獲得半導體封裝9。密封樹脂8並無特別限制，可適當使用半導體封裝之製造中可使用之公知之密封樹脂。又，利用密封樹脂8之密封方法亦無特別限制，可採用通常進行之方法。 [實施例]
以下，基於實施例及比較例，更具體地說明本發明，但本發明並不限定於以下實施例。又，室溫係指25℃，MEK係指甲基乙基酮。
[實施例1] ＜切晶膜（黏著劑層）之製作＞ （1）基材膜之製作 使低密度聚乙烯（LDPE、密度0.92 g/cm 3、熔點110℃）之樹脂顆粒（pellet）於230℃熔融，使用擠出機成形為厚度70 μm之長條膜狀。對所獲得之膜照射100 kGy之電子束，而製作基材膜。
（2）切晶膜之形成 使用50莫耳%之丙烯酸丁酯、45莫耳%之丙烯酸2-羥基乙酯及5莫耳%之丙烯酸，而製備質量平均分子量80萬之共聚物。添加甲基丙烯酸2-異氰酸基乙酯以使碘值成為20，從而製備玻璃轉移溫度-40℃、羥值30 mgKOH/g、酸值5 mgKOH/g之丙烯酸系共聚物。 繼而，對於上述所製備之丙烯酸系共聚物100質量份，加入作為聚異氰酸酯之Coronate L（商品名，Nippon Polyurethane製造）5質量份，並加入作為光聚合起始劑之Esacure KIP 150（商品名，Lamberti公司製造）3質量份，使所獲得之混合物溶解於乙酸乙酯中，進行攪拌而製備黏著劑組成物。 繼而，於經脫模處理之由聚對苯二甲酸乙二酯（PET）膜所構成之剝離襯墊上，以乾燥後之厚度成為20 μm之方式塗佈該黏著劑組成物，於110℃乾燥3分鐘而形成切晶膜後，將上述所製備之基材膜與切晶膜貼合，而獲得由剝離襯墊、切晶膜及基材膜所構成之3層積層體。
＜黏晶膜（接著劑層）之製作＞ 於1000 ml之可分離式燒瓶中，將三苯甲烷型環氧樹脂（商品名：EPPN-501H，質量平均分子量：1000，軟化點：55℃，半固體，環氧當量：167 g/eq，日本化藥（股）製造）56質量份、雙酚A型環氧樹脂（商品名：YD-128，質量平均分子量：400，軟化點：未達25℃，液體，環氧當量：190 g/eq，NSCC Epoxy Manufacturing（股）製造）49質量份、雙酚A型苯氧基樹脂（商品名：YP-50，質量平均分子量：70000，Tg：84℃，常溫（25℃）彈性模數：1700 MPa，NSCC Epoxy Manufacturing（股）製造）10質量份及MEK67質量份於溫度110℃加熱攪拌2小時，獲得樹脂清漆。 繼而，將該樹脂清漆移至800 ml之行星式混合機中，添加氧化鋁填料（商品名：AO-502，Admatechs公司製造，平均粒徑（d50）：0.6 μm）205質量份，添加咪唑系硬化劑（商品名：2PHZ-PW，四國化成（股）製造）8.5質量份、矽烷偶合劑（商品名：Sila-Ace S-510，JNC公司製造）3.0質量份，於室溫攪拌混合1小時後，進行真空脫泡而獲得混合清漆（黏晶膜形成用組成物）。 繼而，將所獲得之混合清漆塗佈於厚度38 μm之經脫模處理之PET膜（剝離膜）之經脫模處理之面上，於130℃加熱乾燥10分鐘，獲得縱300 mm、橫200 mm、厚度10 μm之於剝離膜上形成有黏晶膜之2層積層體。 繼而，利用加壓輥（型號：UNA-980BK，表面粗糙度Ra 5-8 μm，商品名；Tosical roll，Tosico股份有限公司製造），於負載0.4 MPa、速度1.0 m/min之條件下使黏晶膜之與剝離膜側相反之側之面變得平坦，並如下表所示控制黏晶膜表面之算術平均粗糙度Ra（Ra1）。
＜切晶黏晶膜之製作＞ 繼而，將包含切晶膜之上述3層積層體以能夠貼合地覆蓋環狀框之開口部之方式剪裁成圓形狀。又，將包含黏晶膜之上述2層積層體以能夠覆蓋晶圓背面之方式剪裁成圓形狀。 自以上述方式剪裁後所得之3層積層體上將剝離襯墊剝離而使切晶膜露出，使用輥壓機，於負載0.4 MPa、速度1.0 m/min之條件下，將所露出之切晶膜與以上述方式剪裁後所得之2層積層體的黏晶膜加以貼合，製作依序積層有基材膜、切晶膜、黏晶膜及剝離膜之切晶黏晶膜。該切晶黏晶膜中，切晶膜大於黏晶膜並具有在黏晶膜之周圍切晶膜露出之部分。
[實施例2] 於實施例1中，除用加壓輥（型號：UNA-800GY，表面粗糙度Ra 8-12 μm，商品名；Tosical roll，Tosico股份有限公司製造）替代用於控制黏晶膜之表面粗糙度之加壓輥以外，以與實施例1相同之方式製作切晶黏晶膜。
[實施例3] 於實施例1中，除用加壓輥（型號：UNA-900BK，表面粗糙度Ra 10-15 μm，商品名；Tosical roll，Tosico股份有限公司製造）替代用於控制黏晶膜之表面粗糙度之加壓輥以外，以與實施例1相同之方式製作切晶黏晶膜。
[實施例4] 於實施例1中，除用加壓輥（型號：UNA-340-X10，表面粗糙度Ra 35-45 μm，商品名；Tosical roll，Tosico股份有限公司製造）替代用於控制黏晶膜之表面粗糙度之加壓輥以外，以與實施例1相同之方式製作切晶黏晶膜。
[實施例5] 於實施例1中，除將作為黏晶膜之成分之氧化鋁填料之使用量設為479質量份以外，以與實施例1相同之方式製作切晶黏晶膜。
[實施例6] 於實施例5中，除用加壓輥（型號：UNA-800GY，表面粗糙度Ra 8-12 μm，商品名；Tosical roll，Tosico股份有限公司製造）替代用於控制黏晶膜之表面粗糙度之加壓輥以外，以與實施例5相同之方式製作切晶黏晶膜。
[實施例7] 於實施例5中，除用加壓輥（型號：UNA-900BK，表面粗糙度Ra 10-15 μm，商品名；Tosical roll，Tosico股份有限公司製造）替代用於控制黏晶膜之表面粗糙度之加壓輥以外，以與實施例5相同之方式製作切晶黏晶膜。
[實施例8] 於實施例5中，除用加壓輥（型號：UNA-340-X10，表面粗糙度Ra 35-45 μm，商品名；Tosical roll，Tosico股份有限公司製造）替代用於控制黏晶膜之表面粗糙度之加壓輥以外，以與實施例5相同之方式製作切晶黏晶膜。
[實施例9] 於實施例1中，除使用銀填料（商品名：AG-4-8F，DOWA Electronics公司製造，平均粒徑（d50）：2.0 μm）360質量份替代作為黏晶膜之成分之氧化鋁填料以外，以與實施例1相同之方式製作切晶黏晶膜。
[實施例10] 於實施例9中，除用加壓輥（型號：UNA-800GY，表面粗糙度Ra 8-12 μm，商品名；Tosical roll，Tosico股份有限公司製造）替代用於控制黏晶膜之表面粗糙度之加壓輥以外，以與實施例9相同之方式製作切晶黏晶膜。
[實施例11] 於實施例9中，除用加壓輥（型號：UNA-900BK，表面粗糙度Ra 10-15 μm，商品名；Tosical roll，Tosico股份有限公司製造）替代用於控制黏晶膜之表面粗糙度之加壓輥以外，以與實施例9相同之方式製作切晶黏晶膜。
[實施例12] 於實施例9中，除用加壓輥（型號：UNA-340-X10，表面粗糙度Ra 35-45 μm，商品名；Tosical roll，Tosico股份有限公司製造）替代用於控制黏晶膜之表面粗糙度之加壓輥以外，以與實施例9相同之方式製作切晶黏晶膜。
[實施例13] 於實施例1中，除使用銀填料（商品名：AG-4-8F，DOWA Electronics公司製造，平均粒徑（d50）：2.0 μm）950質量份替代作為黏晶膜之成分之氧化鋁填料以外，以與實施例1相同之方式製作切晶黏晶膜。
[實施例14] 於實施例13中，除用加壓輥（型號：UNA-800GY，表面粗糙度Ra 8-12 μm，商品名；Tosical roll，Tosico股份有限公司製造）替代用於控制黏晶膜之表面粗糙度之加壓輥以外，以與實施例13相同之方式製作切晶黏晶膜。
[實施例15] 於實施例13中，除用加壓輥（型號：UNA-900BK，表面粗糙度Ra 10-15 μm，商品名；Tosical roll，Tosico股份有限公司製造）替代用於控制黏晶膜之表面粗糙度之加壓輥以外，以與實施例13相同之方式製作切晶黏晶膜。
[實施例16] 於實施例13中，除用加壓輥（型號：UNA-340-X10，表面粗糙度Ra 35-45 μm，商品名；Tosical roll，Tosico股份有限公司製造）替代用於控制黏晶膜之表面粗糙度之加壓輥以外，以與實施例13相同之方式製作切晶黏晶膜。
[實施例17] 於實施例2中，除使用丙烯酸樹脂溶液（商品名：S-2060，質量平均分子量：500000，Tg：-23℃，常溫（25℃）彈性模數：50 MPa，固形物成分25%（有機溶劑：甲苯）、東亞合成（股）製造）120質量份（其中丙烯酸聚合物質量份30質量份）替代作為黏晶膜之成分之雙酚A型苯氧基樹脂，並將氧化鋁填料之使用量設為320質量份以外，以與實施例2相同之方式製作切晶黏晶膜。
[比較例1] 於實施例1中，除用加壓輥（型號：UNA-102CR，表面粗糙度Ra 0.5-1.5 μm、商品名；Tosical roll、Tosico股份有限公司製造）替代用於控制黏晶膜之表面粗糙度之加壓輥以外，以與實施例1相同之方式製作切晶黏晶膜。
[比較例2] 於比較例1中，除將作為黏晶膜之成分之氧化鋁填料之使用量設為479質量份以外，以與比較例1相同之方式製作切晶黏晶膜。
[比較例3] 於比較例1中，除使用銀填料（商品名：AG-4-8F，DOWA Electronics公司製造，平均粒徑（d50）：2.0 μm）360質量份替代作為黏晶膜之成分之氧化鋁填料以外，以與比較例1相同之方式製作切晶黏晶膜。
[比較例4] 於比較例3中，除將作為黏晶膜之成分之銀填料之使用量設為950質量份以外，以與比較例3相同之方式製作切晶黏晶膜。
[比較例5] 於實施例7中所製作之切晶黏晶膜中，將剝離膜暫時剝離，利用加壓輥（型號：UNA-900BK，表面粗糙度Ra 10-15 μm，商品名；Tosical roll，Tosico股份有限公司製造），如下表所示控制黏晶膜之與剝離膜相接之表面之算術平均粗糙度Ra（Ra2），繼而，再次貼合剝離之剝離膜而製作切晶黏晶膜。
[比較例6] 於實施例16中所製作之切晶黏晶膜中，將剝離膜暫時剝離，利用加壓輥（型號：UNA-340-X10，表面粗糙度Ra 35-45 μm，商品名；Tosical roll，Tosico股份有限公司製造），如下表所示控制黏晶膜之與剝離膜相接之表面之表面粗糙度Ra（Ra2），繼而，再次貼合剝離之剝離膜而製作切晶黏晶膜。
[比較例7] 於實施例17中所製作之切晶黏晶膜中，將剝離膜暫時剝離，利用加壓輥（型號：UNA-800GY，表面粗糙度Ra 8-12 μm，商品名；Tosical roll、Tosico股份有限公司製造），如下表所示控制黏晶膜之與剝離膜相接之表面之表面粗糙度Ra（Ra2），繼而，再次貼合剝離之剝離膜而製作切晶黏晶膜。
[測定、試驗、評價] 針對上述各實施例及比較例中所獲得之各切晶黏晶膜，進行有關下述項目之測定、試驗或評價。 將結果彙總示於下表。
＜黏晶膜之算術平均粗糙度Ra1＞ 針對各切晶黏晶膜，使用紫外線照射裝置（商品名：RAD-2000F/8，LINTEC股份有限公司製造，照射量200 mJ/cm 2）自切晶膜側照射紫外線，繼而將切晶膜自黏晶膜剝離，使用表面粗糙度測定機（型號：SJ-201，Mitutoyo公司製造），對黏晶膜之切晶膜側表面之算術平均粗糙度Ra1進行測定。測定條件如下所示。 截止（cut off）值：2.5 mm 評價長度：12.4 mm 測定速度：0.5 mm/s 觸針前端半徑（R）：2 μm
＜黏晶膜之算術平均粗糙度Ra2＞ 針對各切晶黏晶膜，使用紫外線照射裝置（商品名：RAD-2000F/8，LINTEC股份有限公司製造，照射量200 mJ/cm 2）自切晶膜側照射紫外線，繼而將切晶膜自黏晶膜剝離，將露出之黏晶膜表面貼合至直徑5英吋、厚度470 μm之虛設矽晶圓（dummy silicon wafer）後，將剝離膜剝離，使用表面粗糙度測定機（型號：SJ-201，Mitutoyo公司製造），對黏晶膜之剝離膜側表面之算術平均粗糙度Ra2進行測定。測定條件如下所示。 截止值：2.5 mm 評價長度：12.4 mm 測定速度：0.5 mm/s 觸針前端半徑（R）：2 μm
＜黏晶膜之熔融黏度＞ 自各切晶黏晶膜切出縱5.0 cm×橫5.0 cm之尺寸，使用紫外線照射裝置（商品名：RAD-2000F/8，LINTEC股份有限公司製造，照射量200 mJ/cm 2）自切晶膜側照射紫外線，將切晶膜與剝離膜自黏晶膜剝離，將剩餘之黏晶膜部分作為試樣。各切晶黏晶膜每個都製備複數個試樣，將該等進行積層，於載置台70℃之熱板上利用手壓輥進行貼合，獲得厚度約為1.0 mm之接著劑層之試驗片。 針對該試驗片，使用流變儀（RS6000，Haake公司製造），測定溫度範圍20～250℃、升溫速度5℃/分鐘時之黏性阻力之變化。根據所獲得之溫度-黏性阻抗曲線，分別算出於120℃時之熔融黏度（Pa・s）。
＜黏晶膜於熱硬化後之導熱率＞ 自各切晶黏晶膜切出一邊50 mm以上之四角形片，使用紫外線照射裝置（商品名：RAD-2000F/8，LINTEC股份有限公司製造，照射量200 mJ/cm 2）自切晶膜側照射紫外線，將切晶膜與剝離膜自黏晶膜剝離，將剩餘之黏晶膜部分作為試樣。各切晶黏晶膜每個都製備複數個試樣，將該等進行積層，而獲得厚度為5 mm以上之積層體。 將該積層體試樣置於直徑50 mm、厚度5 mm之圓盤狀模具上，使用壓縮加壓成型機，於溫度150℃、壓力2 MPa進行10分鐘加熱，取出後，進而於乾燥機中以溫度180℃進行1小時加熱，藉此使接著劑層熱硬化，而獲得直徑50 mm、厚度5 mm之圓盤狀試驗片。 針對該試驗片，使用導熱率測定裝置（商品名：HC-110，英弘精機（股）製造），藉由熱流計法（依據JIS-A1412）測定導熱率（W/（m・K））。
＜連續拾取性評價＞ 針對各切晶黏晶膜，首先將剝離膜剝離，使用手動貼合機（商品名：FM-114，Techvision公司製造），於溫度70℃、壓力0.3 MPa之條件下，在虛設矽晶圓（8inch尺寸，厚度100 μm）之一面貼合露出之黏晶膜表面。繼而，使用設置有雙軸切晶刀片（Z1：NBC-ZH2050（27HEDD）、DISCO公司製造/Z2：NBC-ZH127F-SE（BC），DISCO公司製造）之切晶裝置（商品名：DFD-6340，DISCO公司製造），以成為5 mm×5 mm之正方形之尺寸之方式自虛設矽晶圓側實施切晶，而獲得切晶膜上附經單片化之黏晶膜片（接著劑層）的虛設晶片。 繼而，使用紫外線照射裝置（商品名：RAD-2000F/8，LINTEC股份有限公司製造，照射量200 mJ/cm 2）自晶圓背面側照射紫外線，利用黏晶機（商品名：DB-800，日立高新技術公司製造），於下述拾取條件下拾取上述附接著劑層之虛設晶片，並以與引線框架基板（42Arroy系，凸版印刷公司製造）之封裝面側貼合之方式，於下述黏晶條件下進行熱壓接合。將該進行拾取並進行熱壓接合之步驟連續反覆地進行，並基於下述評價基準來評價連續拾取性。 -拾取條件- 針根數5根（350R）、針高200 μm、拾取計時器100 msec或300 msec -黏晶條件- 120℃、壓力0.1 MPa（負載400 gf）、時間1.0秒 -評價基準- AA：利用拾取計時器100 msec連續地進行拾取、熱壓接合後之全部192個虛設晶片於目視觀察下均未見切晶膜上之接著劑層殘留。 A：不符合上述AA，但利用拾取計時器300 msec連續地進行拾取、熱壓接合後之全部192個虛設晶片於目視觀察下均未見切晶膜上之接著劑層殘留。 B：不符合上述AA，且利用拾取計時器300 msec連續地進行拾取、熱壓接合後之192個虛設晶片中，目視觀察下於切晶膜上產生接著劑層殘留之晶片有1～2個。 C：不符合上述AA，且利用拾取計時器300 msec連續地進行拾取、熱壓接合後之192個虛設晶片中，目視觀察下於切晶膜上產生接著劑層殘留之晶片有3～10個。 D：不符合上述AA，且利用拾取計時器300 msec連續地進行拾取、熱壓接合後之192個虛設晶片中，目視觀察下於切晶膜上產生接著劑層殘留之晶片在11個以上。
[表1]
實施例
1 2 3 4 5 6 7 8 9
黏晶膜組成 （質量份） 環氧樹脂 EPPN-501H（三苯甲烷型環氧樹脂） 56 56 56 56 56 56 56 56 56
YD-128（液狀雙酚A型環氧樹脂） 49 49 49 49 49 49 49 49 49
高分子成分 YP-50（雙酚A型苯氧基樹脂） 10 10 10 10 10 10 10 10 10
S-2060（丙烯酸樹脂）
無機填充材 AO502（氧化鋁） 205 205 205 205 479 479 479 479
AG-4-8F（銀） 360
S-510（環氧矽烷型矽烷偶合劑） 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0
2PHZ-PW（咪唑系硬化劑） 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5
總固形物成分 331 331 331 331 605 605 605 605 486
無機填充材含量（體積%） 33% 33% 33% 33% 54% 54% 54% 54% 25%
加壓輥型號（表面粗糙度） UNA-980BK （Ra 5-8 μm） UNA-800GY （Ra 8-12 μm） UNA-900BK （Ra 10-15 μm） UNA-340-X10 （Ra 35-45 μm） UNA-980BK （Ra 5-8 μm） UNA-800GY （Ra 8-12 μm） UNA-900BK （Ra 10-15 μm） UNA-340-X10 （Ra 35-45 μm） UNA-980BK （Ra 5-8 μm）
黏晶膜之算術平均粗糙度Ra1（μm，切晶膜側） 0.14 0.35 0.60 2.20 0.35 0.55 0.70 2.50 0.24
黏晶膜之算術平均粗糙度Ra2（μm，剝離膜側、晶圓側） 0.13 0.13 0.13 0.13 0.14 0.14 0.14 0.14 0.08
Ra1/Ra2 1.08 2.69 4.62 16.92 2.50 3.93 5.00 17.86 3.00
黏晶膜於120℃時之熔融黏度（Pa･s） 4900 4900 4900 4900 7500 7500 7500 7500 560
黏晶膜於熱硬化後之導熱率（W/m･K） 1.0 1.0 1.0 1.0 1.8 1.8 1.8 1.8 6.2
拾取性評價 A A AA AA A A AA AA A
實施例
10 11 12 13 14 15 16 17
黏晶膜組成 （質量份） 環氧樹脂 EPPN-501H（三苯甲烷型環氧樹脂） 56 56 56 56 56 56 56 56
YD-128（液狀雙酚A型環氧樹脂） 49 49 49 49 49 49 49 49
高分子成分 YP-50（雙酚A型苯氧基樹脂） 10 10 10 10 10 10 10
S-2060（丙烯酸樹脂） 30
無機填充材 AO502（氧化鋁） 320
AG-4-8F（銀） 360 360 360 950 950 950 950
S-510（環氧矽烷型矽烷偶合劑） 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0
2PHZ-PW（咪唑系硬化劑） 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5
總固形物成分 486 486 486 1076 1076 1076 1076 467
無機填充材含量（體積%） 25% 25% 25% 46% 46% 46% 46% 40%
加壓輥型號（表面粗糙度） UNA-800GY （Ra 8-12 μm） UNA-900BK （Ra 10-15 μm） UNA-340-X10 （Ra 35-45 μm） UNA-980BK （Ra 5-8 μm） UNA-800GY （Ra 8-12 μm） UNA-900BK （Ra 10-15 μm） UNA-340-X10 （Ra 35-45 μm） UNA-800GY （Ra 8-12 μm）
黏晶膜之算術平均粗糙度Ra1（μm，切晶膜側） 0.55 0.82 2.10 0.24 0.76 1.50 2.20 0.50
黏晶膜之算術平均粗糙度Ra2（μm，剝離膜側､晶圓側） 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.12
Ra1/Ra2 6.88 10.25 26.25 2.67 8.44 16.67 24.44 4.17
黏晶膜於120℃時之熔融黏度（Pa･s） 560 560 560 7760 7760 7760 7760 9000
黏晶膜於熱硬化後之導熱率（W/m･K） 6.2 6.2 6.2 26.2 26.2 26.2 26.2 1.4
拾取性評價 A AA AA A AA AA AA A
[表2]
比較例
1 2 3 4 5 6 7
黏晶膜組成 （質量份） 環氧樹脂 EPPN-501H（三苯甲烷型環氧樹脂） 56 56 56 56 56 56 56
YD-128（液狀雙酚A型環氧樹脂） 49 49 49 49 49 49 49
高分子成分 YP-50（雙酚A型苯氧基樹脂） 10 10 10 10 10 10
S-2060（丙烯酸樹脂） 30
無機填充材 AO502（氧化鋁） 205 479 479 320
AG-4-8F（銀） 360 950 950
S-510（環氧矽烷型矽烷偶合劑） 3.0 3.0 3.0 3.0 3.0 3.0 3.0
2PHZ-PW（咪唑系硬化劑） 8.5 8.5 8.5 8.5 8.5 8.5 8.5
總固形物成分 331 605 486 1076 605 1076 467
無機填充材含量（體積%） 33% 54% 25% 46% 54% 46% 40%
加壓輥型號（表面粗糙度） UNA-102CR （Ra 0.5-1.5 μm） UNA-102CR （Ra 0.5-1.5 μm） UNA-102CR （Ra 0.5-1.5 μm） UNA-102CR （Ra 0.5-1.5 μm） UNA-900BK* （Ra 10-15 μm） UNA-340-X10* （Ra 35-45 μm） UNA-800GY* （Ra 8-12 μm）
黏晶膜之算術平均粗糙度Ra1（μm，切晶膜側） 0.13 0.14 0.08 0.09 0.70 2.20 0.50
黏晶膜之算術平均粗糙度Ra2（μm，剝離膜側、晶圓側） 0.13 0.14 0.08 0.09 0.72 2.22 0.52
Ra1/Ra2 1.00 1.00 1.00 1.00 0.97 0.99 0.96
黏晶膜於120℃時之熔融黏度（Pa･s） 4900 7500 560 7760 7500 7760 9000
黏晶膜於熱硬化後之導熱率（W/m･K） 1.0 1.8 6.2 26.2 1.8 26.2 1.4
拾取性評價 C C C C C D C
*利用相同加壓輥使剝離膜被剝離之接著劑層面變得平坦。
如上述表1及2所示，Ra1/Ra2小於本發明規定值之比較例1～7之切晶黏晶膜容易產生拾取不良。與此相對，可知Ra1/Ra2滿足本發明規定值之實施例1～17之切晶黏晶膜均明顯抑制了拾取不良之產生。又，該等結果表明，使Ra1/Ra2為1.05以上之上述技術意義無論Ra1之大小如何均表現出。 再者，於實施例及比較例之所有切晶黏晶膜中，切晶膜與黏晶膜之間之紫外線照射前的剝離力（依據JISZ0237，180°剝離試驗）足夠高，於切晶步驟中未產生切晶精度之異常等。又，在拾取後熱壓接合至引線框架基板時，亦未觀察到如實用上會產生問題之明顯空隙。
對本發明與其實施方式一併進行了說明，但我等認為，除非特別指定，否則不應將我等之發明限定於說明之任何細節，應於不違反隨附專利申請範圍所示之發明之精神及範圍內加以廣泛解釋。
本申請主張基於2021年3月26日於日本提出專利申請之特願2021-052761之優先權，此處作為參照將其內容併入作為本說明書之記載之一部分。
1:半導體晶圓 2:黏晶膜（接著劑層） 3:切晶膜 4:半導體晶片 5:附接著劑層之半導體晶片 6:配線基板 7:接合線 8:密封樹脂 9:半導體封裝
[圖1]係表示本發明之半導體封裝之製造方法的第1步驟之較佳一實施方式的概略縱剖視圖。 [圖2]係表示本發明之半導體封裝之製造方法的第2步驟之較佳一實施方式的概略縱剖視圖。 [圖3]係表示本發明之半導體封裝之製造方法的第3步驟之較佳一實施方式的概略縱剖視圖。 [圖4]係表示本發明之半導體封裝之製造方法的接合線連接步驟之較佳一實施方式的概略縱剖視圖。 [圖5]係表示本發明之半導體封裝之製造方法的多段積層實施方式例之概略縱剖視圖。 [圖6]係表示本發明之半導體封裝之製造方法的另一多段積層實施方式例之概略縱剖視圖。 [圖7]係表示藉由本發明之半導體封裝之製造方法所製造的半導體封裝之較佳一實施方式的概略縱剖視圖。

Claims (6)

  1. 一種切晶黏晶膜(dicing die attach film)，其具有切晶膜、及積層在該切晶膜上之黏晶膜，上述黏晶膜之與上述切晶膜相接之面之算術平均粗糙度Ra1為0.05~2.50μm，上述Ra1相對於上述黏晶膜之與上述切晶膜相接之面之相反側面的算術平均粗糙度Ra2之比值為1.05~28.00，上述黏晶膜自25℃起以5℃/分鐘之升溫速度升溫時，於120℃時之熔融黏度達到500~10000Pa‧s之範圍。
  2. 如請求項1之切晶黏晶膜，其中，上述黏晶膜含有環氧樹脂(A)、環氧樹脂硬化劑(B)、高分子成分(C)及無機填充材(D)，且熱硬化後形成導熱率1.0W/m‧K以上之硬化體。
  3. 如請求項1或2之切晶黏晶膜，其中，上述切晶膜為能量線硬化性。
  4. 一種切晶黏晶膜之製造方法，其係請求項1至3中任一項之切晶黏晶膜之製造方法，包括使用加壓輥使上述黏晶膜表面變得平坦，藉此製作滿足上述Ra1及上述Ra2之表面狀態。
  5. 一種半導體封裝，其係半導體晶片與配線基板、及/或半導體晶片間藉由接著劑之熱硬化體被接著而成，且該接著劑源自請求項1至3中任一項之切晶黏晶膜之黏晶膜。
  6. 一種半導體封裝之製造方法，其包括：第1步驟，其將請求項1至3中任一項之切晶黏晶膜以上述黏晶膜與半導體晶圓之背面相接之方式熱壓接合於表面形成有至少一個半導體電路之半導體晶圓之背面而設置； 第2步驟，其藉由將上述半導體晶圓及上述黏晶膜一體地進行切晶，而獲得切晶膜上具備黏晶膜片及半導體晶片之附接著劑層之半導體晶片；第3步驟，其將上述附接著劑層之半導體晶片自上述切晶膜剝離，介隔上述接著劑層將上述附接著劑層之半導體晶片與配線基板熱壓接合；及第4步驟，其將上述接著劑層熱硬化。
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WO2021048986A1 (ja) * 2019-09-12 2021-03-18 昭和電工マテリアルズ株式会社 半導体装置の製造方法、接着剤層の選定方法、並びに、ダイシング・ダイボンディング一体型フィルム及びその製造方法

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* Cited by examiner, † Cited by third party
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WO2021033368A1 (ja) * 2019-08-22 2021-02-25 古河電気工業株式会社 接着剤用組成物、フィルム状接着剤及びその製造方法、並びに、フィルム状接着剤を用いた半導体パッケージおよびその製造方法
WO2021048986A1 (ja) * 2019-09-12 2021-03-18 昭和電工マテリアルズ株式会社 半導体装置の製造方法、接着剤層の選定方法、並びに、ダイシング・ダイボンディング一体型フィルム及びその製造方法

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