WO2014116304A2 - Method and hardware for cleaning uv chambers - Google Patents

Method and hardware for cleaning uv chambers Download PDF

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Publication number
WO2014116304A2
WO2014116304A2 PCT/US2013/055594 US2013055594W WO2014116304A2 WO 2014116304 A2 WO2014116304 A2 WO 2014116304A2 US 2013055594 W US2013055594 W US 2013055594W WO 2014116304 A2 WO2014116304 A2 WO 2014116304A2
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WO
WIPO (PCT)
Prior art keywords
showerhead
gas
holes
cleaning
substrate support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2013/055594
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French (fr)
Other versions
WO2014116304A3 (en
Inventor
Sanjeev Baluja
Alexandros T. Demos
Kelvin Chan
Juan Carlos Rocha-Alvarez
Scott A. Hendrickson
Abhijit Kangude
Inna Turevsky
Mahendra Chhabra
Thomas Nowak
Daping YAO
Bo Xie
Daemian Raj
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Applied Materials Inc
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Applied Materials Inc
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Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to KR1020157006905A priority Critical patent/KR102133373B1/en
Priority to JP2015528555A priority patent/JP2015529395A/en
Priority to KR1020207004990A priority patent/KR102212369B1/en
Publication of WO2014116304A2 publication Critical patent/WO2014116304A2/en
Publication of WO2014116304A3 publication Critical patent/WO2014116304A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/20—Industrial or commercial equipment, e.g. reactors, tubes or engines

Definitions

  • Embodiments described herein generally relate to methods and apparatus for recovering dielectric constant of a low dielectric constant material.
  • a chamber having two UV transparent gas distribution showerheads is described that allows cleaning of silicon and carbon residues without affecting a UV window in the chamber lid.
  • new materials with a low dielectric constant (k), such as materials with dielectric value as low as 2.2, are used in forming the electronic devices.
  • Plasma-deposited porous low k films are one class of materials that is able to satisfy such a requirement.
  • the presence of pores and carbon, which contributes to low dielectric value, creates significant process integration challenges since the pores are susceptible to etching, ashing, and plasma damages. Therefore, a k-restoration process is usually needed to restore the porous low-k films after formation and/or after integration.
  • Embodiments disclosed herein generally relate to methods and apparatus for processing substrates.
  • a process chamber features a first UV transparent showerhead and a second UV transparent showerhead.
  • a UV transparent window is positioned above the showerheads.
  • the UV transparent window and the first UV transparent showerhead together define a gas volume
  • the first UV transparent showerhead and the second UV transparent showerhead together define a distribution volume.
  • Gas openings in the chamber side wall or lid provide a flow pathway for process gases into the gas volume and/or the distribution volume. Process gases flow through the first and second UV transparent showerheads into a space proximate to a substrate support.
  • a cleaning method for such a chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber.
  • the first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues.
  • a second cleaning gas may be a remote plasma of NF 3 and O 2 to remove silicon residues.
  • a purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.
  • Figure 1 is a schematic sectional view of a process chamber 100 according to one embodiment.
  • Figure 1 is a schematic sectional view of a processing chamber 100 according to one embodiment.
  • the processing chamber 100 is configured to process a substrate using UV energy, one or more processing gases, and remotely generated plasma.
  • the processing chamber 100 includes a chamber body 102 and a chamber lid 104 disposed over the chamber body.
  • the chamber body 102 and the chamber lid 104 form an inner volume 106.
  • a substrate support assembly 108 is disposed in the inner volume 106.
  • the substrate support assembly 108 receives and supports a substrate 1 10 thereon for processing.
  • a first UV transparent gas distribution showerhead 1 16 is hung in the inner volume 106 through a central opening 1 12 of the chamber lid 104 by an upper clamping member 1 18 and a lower clamping member 120.
  • the UV transparent gas distribution showerhead 1 16 is positioned facing the substrate support assembly 108 to distribute one or more processing gases across a distribution volume 122 which is below the first UV transparent gas distribution showerhead 1 16.
  • a second UV transparent showerhead 124 is hung in the inner volume 106 through the central opening 1 12 of the chamber lid 104 below the first UV transparent gas distribution showerhead 1 16.
  • Each of the UV transparent gas distribution showerheads 1 16 and 124 is disposed in a recess formed in the chamber lid 104.
  • a first recess 126 is an annular recess around an internal surface of the chamber lid 104, and the first UV transparent gas distribution showerhead 1 16 fits into the first recess 126. Likewise, a second recess 128 receives the second UV transparent gas distribution showerhead 124.
  • a UV transparent window 1 14 is disposed above the first UV transparent gas distribution showerhead 1 16.
  • the window UV transparent 1 14 is positioned above the first UV transparent gas distribution showerhead 1 16 fornning a gas volume 130 between the UV transparent window 1 14 and the first UV transparent gas distribution showerhead 1 16.
  • the UV transparent window 1 14 may be secured to the chamber lid 104 by any convenient means, such as clamps, screws, or bolts.
  • the UV transparent window 1 14 and the first and second UV transparent gas distribution showerheads 1 16 and 124 are at least partially transparent to thermal or radiant energy within the UV wavelengths.
  • the UV transparent window 1 14 may be quartz or another UV transparent silicon material, such as sapphire, CaF 2 , MgF 2 , AION, a silicon oxide or silicon oxynitride material, or another transparent material.
  • a UV source 150 is disposed above the UV transparent window 1 14.
  • the UV source 150 is configured to generate UV energy and project the UV energy towards the substrate support 108 through the UV transparent window 1 14, the first UV transparent gas distribution showerhead 1 16, and the second UV transparent gas distribution showerhead 124.
  • a cover (not shown) may be disposed above the UV source 150. In one embodiment, the cover may be shaped to assist projection of the UV energy from the UV source 150 towards the substrate support.
  • the UV source 150 includes one or more UV lights 152 to generate UV radiation.
  • the UV lights may be lamps, LED emitters, or other UV emitters. More detailed descriptions of suitable UV sources can be found in United States Patent No. 7,777,198, and United States Patent Publication 2006/0249175.
  • the processing chamber 100 includes flow channels configured to supply one or more processing gases across the substrate support 108 to process a substrate disposed thereon.
  • a first flow channel 132 provides a flow pathway for gas to enter the gas volume 130 and to be exposed to UV radiation from the UV source 150. The gas from the gas volume 130 may flow through the first UV transparent gas distribution showerhead 1 16 into the distribution volume 122.
  • a second flow channel 134 provides a flow pathway for gas to enter the distribution volume 122 directly without passing through the first UV transparent gas distribution showerhead 1 16 to mix with the gas that was previously exposed to UV radiation in the gas volume 130.
  • the mixed gases in the distribution volume 122 are further exposed to UV radiation through the first UV transparent gas distribution showerhead 1 16 before flowing through the second UV transparent gas distribution showerhead 124 into a space proximate the substrate support 108.
  • the gas proximate the substrate support 108, and a substrate disposed on the substrate support 108, is further exposed to the UV radiation through the second UV transparent gas distribution showerhead 124.
  • Gases may be exhausted through the opening 136.
  • Purge gases may be provided through the opening 138 in the bottom of the chamber, such that the purge gases flow around the substrate support 108, effectively preventing intrusion of process gases into the space under the substrate support.
  • the first UV transparent gas distribution showerhead 1 16 includes a plurality of through holes 140 that allow processing gas to flow from the gas volume 130 to the distribution volume 122.
  • the second UV transparent gas distribution showerhead 124 also includes a plurality of through holes 142 that allow processing gas to flow from the distribution volume 122 into the processing space proximate the substrate support 108.
  • the through holes in the first and second gas UV transparent gas distribution showerheads may be evenly distributed with the same spacing or different spacing.
  • Figure 2A is a plan view of the first UV transparent gas distribution showerhead 1 16.
  • the first showerhead 1 16 may comprise a first plurality of through holes 202 arranged toward a periphery of the first showerhead 1 16 and a second plurality of through holes 204 arranged toward a center region of the first showerhead 1 16.
  • the first plurality of through holes 202 and the second plurality of through holes 204 may be arranged in concentric ranks.
  • the through holes 202 at the periphery of the showerhead 1 16 have a diameter that is larger than the holes 204 at the central region of the showerhead 1 16.
  • the holes 202 have a diameter between about 0.020 inches and about 0.050 inches, for example about 0.030 inches, and the holes 204 have a diameter between about 0.010 inches and about 0.030 inches, for example about 0.020 inches.
  • the holes 202 have a first spacing 220, and the holes 204 have a second spacing 210.
  • the spacing 210 is larger than the spacing 220.
  • the hole size and spacing promotes faster flow through the showerhead 1 16 in the peripheral region thereof to promote contact of cleaning gases with chamber walls.
  • FIG. 2B is a plan view of the second UV transparent gas distribution showerhead 124.
  • the showerhead 124 may comprise a plurality of through holes 206 with uniform size and spacing to promote uniform flow through the showerhead 124.
  • the through holes 206 may have a diameter of between about 0.020 inches and about 0.050 inches, for example about 0.030 inches.
  • FIG. 2C is a detailed cross-sectional view of a UV transparent gas distribution showerhead 200 having through holes 208 formed therein.
  • the through holes 208 may be used as the through holes 140, 142, 202, and 204, and the plate 200 may be used as the plate 1 16 or 124.
  • the through holes 208 have a tapered entry portion 222 and a tapered exit portion 224.
  • a coating 226 is disposed over all exposed surfaces of the plate 200.
  • the coating 226 may be a fluorine-resistant coating, such as sapphire, CaF 2 , MgF 2 , AION, or other fluorine- resistant material, and is typically conformal.
  • the coating may have a thickness between about 1 ⁇ and about 10 ⁇ , and may be deposited by a vapor deposition process, such as chemical vapor deposition, which may be plasma enhanced.
  • the tapered entry portion 222 and the tapered exit portion 224 facilitate coating the entire surface of the through hole 208.
  • both major surface of the plate 200 are coated.
  • only one major surface of the plate 200 is coated.
  • the through holes 208 may be entirely coated or only partially coated.
  • the through holes 208 are tapered on only one side, the entry side or the exit side.
  • FIG. 2D is a plan view of a second UV transparent gas distribution showerhead 250 according to another embodiment.
  • the showerhead 250 may be used in the apparatus 100 of Figure 1 as the showerhead 124.
  • the showerhead 250 has a single large opening 255 in a central region of the showerhead 250.
  • the opening 255 allows flow through the showerhead 250, and sizing of the opening 255 relative to a substrate to be processed in the chamber 100 ( Figure 1 ) promotes uniform processing of the substrate.
  • sizing the opening 255 at a diameter of about 0.5 inches allows uniform processing of substrates and thorough cleaning of chamber surfaces.
  • processing gases are provided to the gas volume 130 and the distribution volume 122 and pass through the showerheads 1 16 and 124 to perform a material operation on a substrate disposed on the substrate support 108. Residues of the process gases impinge on various chamber surfaces, such as the window 1 14, on a side facing the gas volume 130, either side of the showerheads 1 16 and 124, and the chamber walls. In one aspect the residues contain carbon and silicon.
  • a method of removing carbon and silicon residues from a chamber containing quartz or silicon oxide components, such as the chamber 100 with the UV transparent window 1 14, includes providing a first cleaning gas to the gas volume 130 and/or the distribution volume 122 through the openings 132 and 134.
  • the first cleaning gas may comprise an oxygen containing gas, such as ozone (O3) for removing carbon residues.
  • the first cleaning gas may also be flowed through the opening 138 and around the substrate support 108, exiting through the exhaust opening 136, to remove carbon residue from the lower surfaces of the chamber 100.
  • the UV source 150 may be activated during the cleaning process to promote formation of oxygen radicals from oxygen in the oxygen-containing gas, thus improving carbon removal.
  • a second cleaning gas may be provided to the chamber 100 to remove silicon and carbon residues concurrently.
  • the second cleaning gas is selected to remove silicon residues while not reacting with silicon oxide components of the chamber 100, such as a quartz window 1 14.
  • the second cleaning gas may be a fluorine-containing gas, which may be activated outside the processing chamber.
  • the second cleaning gas is a remote plasma of NF 3 and O2 containing oxygen radicals and fluorine radicals.
  • the UV source may be activated during use of the second cleaning gas to promote formation of oxygen radicals and the break diatomic fluorine into fluorine radicals.
  • the second cleaning gas may also be provided through the openings 132, 134, and 138, exhausting through the opening 136.
  • a purge gas such as argon or helium, may be provided through the opening 132, instead of a cleaning gas.
  • a purge gas may be provided through opening 132 while a precursor gas is provided through opening 134.
  • the purge gas prevents deposition of process gases on the UV window 1 14 by confining the process gases to the distribution volume 122.
  • a purge gas may likewise be used in the gas volume 130 if cleaning is not required for the UV window 1 14.
  • purge gas may be provided through the openings 132 and 134, while a cleaning gas is provided through the opening 138 to perform a cleaning operation on lower surfaces of the chamber 100.
  • the substrate support 108 may be moved to a position proximate the second recess 128 of the chamber lid 104 to promote energetic flow of purge gas around the edge of the substrate support 108 into the exhaust opening 136, effectively preventing cleaning gases from emerging into the space between the second showerhead 124 and the substrate support 108.
  • the purge gas may be argon remote plasma.
  • the argon plasma may be subjected to a high pressure drop when entering through the openings 132 and/or 134 to promote recombination of radicals, while the cleaning gas is subjected to a low pressure drop to promote radical longevity.
  • Table 1 contains a summary of a typical cleaning matrix, according to the methods described herein.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

Description

METHOD AND HARDWARE FOR CLEANING UV CHAMBERS
FIELD
[0001] Embodiments described herein generally relate to methods and apparatus for recovering dielectric constant of a low dielectric constant material. A chamber having two UV transparent gas distribution showerheads is described that allows cleaning of silicon and carbon residues without affecting a UV window in the chamber lid.
BACKGROUND
[0002] As the size of the electronic devices is reduced, new materials with a low dielectric constant (k), such as materials with dielectric value as low as 2.2, are used in forming the electronic devices.
[0003] Plasma-deposited porous low k films are one class of materials that is able to satisfy such a requirement. The presence of pores and carbon, which contributes to low dielectric value, creates significant process integration challenges since the pores are susceptible to etching, ashing, and plasma damages. Therefore, a k-restoration process is usually needed to restore the porous low-k films after formation and/or after integration.
[0004] Traditionally, two different chambers are needed for k-restoration. One chamber for chemical treatment of the low-k films, such as silylation, or deposition of a thin film for surface treatment of the low-k films. A different chamber is used for pore sealing using UV (ultra violet) curing. Traditional k- restoration is performed in separate chambers because the chemical surface treatment uses a showerhead to supply a processing gas including halogen or ozone while the UV chamber uses a quartz window which usually is not compatible with halogen and ozone. However, the two chamber k-restoration process increases cost of ownership by requiring two chambers and additional time for substrate transfer. [0005] Therefore, there is a need for an improved apparatus and method for k-restoration processes.
SUMMARY
[0006] Embodiments disclosed herein generally relate to methods and apparatus for processing substrates. A process chamber features a first UV transparent showerhead and a second UV transparent showerhead. A UV transparent window is positioned above the showerheads. The UV transparent window and the first UV transparent showerhead together define a gas volume, and the first UV transparent showerhead and the second UV transparent showerhead together define a distribution volume. Gas openings in the chamber side wall or lid provide a flow pathway for process gases into the gas volume and/or the distribution volume. Process gases flow through the first and second UV transparent showerheads into a space proximate to a substrate support.
[0007] A cleaning method for such a chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. A second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other effective embodiments.
[0009] Figure 1 is a schematic sectional view of a process chamber 100 according to one embodiment.
DETAILED DESCRIPTION
[0010] Figure 1 is a schematic sectional view of a processing chamber 100 according to one embodiment. The processing chamber 100 is configured to process a substrate using UV energy, one or more processing gases, and remotely generated plasma.
[0011] The processing chamber 100 includes a chamber body 102 and a chamber lid 104 disposed over the chamber body. The chamber body 102 and the chamber lid 104 form an inner volume 106. A substrate support assembly 108 is disposed in the inner volume 106. The substrate support assembly 108 receives and supports a substrate 1 10 thereon for processing.
[0012] A first UV transparent gas distribution showerhead 1 16 is hung in the inner volume 106 through a central opening 1 12 of the chamber lid 104 by an upper clamping member 1 18 and a lower clamping member 120. The UV transparent gas distribution showerhead 1 16 is positioned facing the substrate support assembly 108 to distribute one or more processing gases across a distribution volume 122 which is below the first UV transparent gas distribution showerhead 1 16. A second UV transparent showerhead 124 is hung in the inner volume 106 through the central opening 1 12 of the chamber lid 104 below the first UV transparent gas distribution showerhead 1 16. Each of the UV transparent gas distribution showerheads 1 16 and 124 is disposed in a recess formed in the chamber lid 104. A first recess 126 is an annular recess around an internal surface of the chamber lid 104, and the first UV transparent gas distribution showerhead 1 16 fits into the first recess 126. Likewise, a second recess 128 receives the second UV transparent gas distribution showerhead 124.
[0013] A UV transparent window 1 14 is disposed above the first UV transparent gas distribution showerhead 1 16. The window UV transparent 1 14 is positioned above the first UV transparent gas distribution showerhead 1 16 fornning a gas volume 130 between the UV transparent window 1 14 and the first UV transparent gas distribution showerhead 1 16. The UV transparent window 1 14 may be secured to the chamber lid 104 by any convenient means, such as clamps, screws, or bolts.
[0014] The UV transparent window 1 14 and the first and second UV transparent gas distribution showerheads 1 16 and 124 are at least partially transparent to thermal or radiant energy within the UV wavelengths. The UV transparent window 1 14 may be quartz or another UV transparent silicon material, such as sapphire, CaF2, MgF2, AION, a silicon oxide or silicon oxynitride material, or another transparent material.
[0015] A UV source 150 is disposed above the UV transparent window 1 14. The UV source 150 is configured to generate UV energy and project the UV energy towards the substrate support 108 through the UV transparent window 1 14, the first UV transparent gas distribution showerhead 1 16, and the second UV transparent gas distribution showerhead 124. A cover (not shown) may be disposed above the UV source 150. In one embodiment, the cover may be shaped to assist projection of the UV energy from the UV source 150 towards the substrate support.
[0016] In one embodiment, the UV source 150 includes one or more UV lights 152 to generate UV radiation. The UV lights may be lamps, LED emitters, or other UV emitters. More detailed descriptions of suitable UV sources can be found in United States Patent No. 7,777,198, and United States Patent Publication 2006/0249175.
[0017] The processing chamber 100 includes flow channels configured to supply one or more processing gases across the substrate support 108 to process a substrate disposed thereon. A first flow channel 132 provides a flow pathway for gas to enter the gas volume 130 and to be exposed to UV radiation from the UV source 150. The gas from the gas volume 130 may flow through the first UV transparent gas distribution showerhead 1 16 into the distribution volume 122. A second flow channel 134 provides a flow pathway for gas to enter the distribution volume 122 directly without passing through the first UV transparent gas distribution showerhead 1 16 to mix with the gas that was previously exposed to UV radiation in the gas volume 130. The mixed gases in the distribution volume 122 are further exposed to UV radiation through the first UV transparent gas distribution showerhead 1 16 before flowing through the second UV transparent gas distribution showerhead 124 into a space proximate the substrate support 108. The gas proximate the substrate support 108, and a substrate disposed on the substrate support 108, is further exposed to the UV radiation through the second UV transparent gas distribution showerhead 124. Gases may be exhausted through the opening 136. Purge gases may be provided through the opening 138 in the bottom of the chamber, such that the purge gases flow around the substrate support 108, effectively preventing intrusion of process gases into the space under the substrate support.
[0018] The first UV transparent gas distribution showerhead 1 16 includes a plurality of through holes 140 that allow processing gas to flow from the gas volume 130 to the distribution volume 122. The second UV transparent gas distribution showerhead 124 also includes a plurality of through holes 142 that allow processing gas to flow from the distribution volume 122 into the processing space proximate the substrate support 108. The through holes in the first and second gas UV transparent gas distribution showerheads may be evenly distributed with the same spacing or different spacing.
[0019] Figure 2A is a plan view of the first UV transparent gas distribution showerhead 1 16. The first showerhead 1 16 may comprise a first plurality of through holes 202 arranged toward a periphery of the first showerhead 1 16 and a second plurality of through holes 204 arranged toward a center region of the first showerhead 1 16. The first plurality of through holes 202 and the second plurality of through holes 204 may be arranged in concentric ranks. In the embodiment of Figure 2A, the through holes 202 at the periphery of the showerhead 1 16 have a diameter that is larger than the holes 204 at the central region of the showerhead 1 16. In one embodiment, the holes 202 have a diameter between about 0.020 inches and about 0.050 inches, for example about 0.030 inches, and the holes 204 have a diameter between about 0.010 inches and about 0.030 inches, for example about 0.020 inches. The holes 202 have a first spacing 220, and the holes 204 have a second spacing 210. In the embodiment of Figure 2A, the spacing 210 is larger than the spacing 220. In the embodiment of Figure 2A, the hole size and spacing promotes faster flow through the showerhead 1 16 in the peripheral region thereof to promote contact of cleaning gases with chamber walls.
[0020] Figure 2B is a plan view of the second UV transparent gas distribution showerhead 124. The showerhead 124 may comprise a plurality of through holes 206 with uniform size and spacing to promote uniform flow through the showerhead 124. The through holes 206 may have a diameter of between about 0.020 inches and about 0.050 inches, for example about 0.030 inches.
[0021] Figure 2C is a detailed cross-sectional view of a UV transparent gas distribution showerhead 200 having through holes 208 formed therein. The through holes 208 may be used as the through holes 140, 142, 202, and 204, and the plate 200 may be used as the plate 1 16 or 124. The through holes 208 have a tapered entry portion 222 and a tapered exit portion 224. A coating 226 is disposed over all exposed surfaces of the plate 200. The coating 226 may be a fluorine-resistant coating, such as sapphire, CaF2, MgF2, AION, or other fluorine- resistant material, and is typically conformal. The coating may have a thickness between about 1 μιτι and about 10 μιτι, and may be deposited by a vapor deposition process, such as chemical vapor deposition, which may be plasma enhanced. The tapered entry portion 222 and the tapered exit portion 224 facilitate coating the entire surface of the through hole 208. IN the embodiment of Figure 2C, both major surface of the plate 200 are coated. In an alternate embodiment, only one major surface of the plate 200 is coated. In such an embodiment, the through holes 208 may be entirely coated or only partially coated. In another alternate embodiment, the through holes 208 are tapered on only one side, the entry side or the exit side.
[0022] Figure 2D is a plan view of a second UV transparent gas distribution showerhead 250 according to another embodiment. The showerhead 250 may be used in the apparatus 100 of Figure 1 as the showerhead 124. The showerhead 250 has a single large opening 255 in a central region of the showerhead 250. The opening 255 allows flow through the showerhead 250, and sizing of the opening 255 relative to a substrate to be processed in the chamber 100 (Figure 1 ) promotes uniform processing of the substrate. For a 300 mm circular substrate, sizing the opening 255 at a diameter of about 0.5 inches allows uniform processing of substrates and thorough cleaning of chamber surfaces.
[0023] In operation, processing gases are provided to the gas volume 130 and the distribution volume 122 and pass through the showerheads 1 16 and 124 to perform a material operation on a substrate disposed on the substrate support 108. Residues of the process gases impinge on various chamber surfaces, such as the window 1 14, on a side facing the gas volume 130, either side of the showerheads 1 16 and 124, and the chamber walls. In one aspect the residues contain carbon and silicon. [0024] A method of removing carbon and silicon residues from a chamber containing quartz or silicon oxide components, such as the chamber 100 with the UV transparent window 1 14, includes providing a first cleaning gas to the gas volume 130 and/or the distribution volume 122 through the openings 132 and 134. The first cleaning gas may comprise an oxygen containing gas, such as ozone (O3) for removing carbon residues. The first cleaning gas may also be flowed through the opening 138 and around the substrate support 108, exiting through the exhaust opening 136, to remove carbon residue from the lower surfaces of the chamber 100. The UV source 150 may be activated during the cleaning process to promote formation of oxygen radicals from oxygen in the oxygen-containing gas, thus improving carbon removal.
[0025] A second cleaning gas may be provided to the chamber 100 to remove silicon and carbon residues concurrently. The second cleaning gas is selected to remove silicon residues while not reacting with silicon oxide components of the chamber 100, such as a quartz window 1 14. The second cleaning gas may be a fluorine-containing gas, which may be activated outside the processing chamber. In one example, the second cleaning gas is a remote plasma of NF3 and O2 containing oxygen radicals and fluorine radicals. The UV source may be activated during use of the second cleaning gas to promote formation of oxygen radicals and the break diatomic fluorine into fluorine radicals. The second cleaning gas may also be provided through the openings 132, 134, and 138, exhausting through the opening 136.
[0026] A purge gas, such as argon or helium, may be provided through the opening 132, instead of a cleaning gas. During a material operation, a purge gas may be provided through opening 132 while a precursor gas is provided through opening 134. The purge gas prevents deposition of process gases on the UV window 1 14 by confining the process gases to the distribution volume 122. During a cleaning operation, a purge gas may likewise be used in the gas volume 130 if cleaning is not required for the UV window 1 14. In another embodiment, purge gas may be provided through the openings 132 and 134, while a cleaning gas is provided through the opening 138 to perform a cleaning operation on lower surfaces of the chamber 100. In such an embodiment, the substrate support 108 may be moved to a position proximate the second recess 128 of the chamber lid 104 to promote energetic flow of purge gas around the edge of the substrate support 108 into the exhaust opening 136, effectively preventing cleaning gases from emerging into the space between the second showerhead 124 and the substrate support 108.
[0027] When a remote plasma of NF3 and O2 is used as the cleaning gas, the purge gas may be argon remote plasma. When used as a purge gas during cleaning, the argon plasma may be subjected to a high pressure drop when entering through the openings 132 and/or 134 to promote recombination of radicals, while the cleaning gas is subjected to a low pressure drop to promote radical longevity.
[0028] Table 1 contains a summary of a typical cleaning matrix, according to the methods described herein.
Table 1
Figure imgf000011_0001
[0029] While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

Claims:
1 . An apparatus for processing a substrate, comprising:
a chamber enclosing a substrate support;
a UV source positioned to illuminate the substrate support; and
a chamber lid, comprising:
a window substantially transparent to UV radiation between the UV source and the substrate support;
a first showerhead between the window and the substrate support, the first showerhead comprising a plurality of through holes wherein a size of the through holes is larger at a periphery of the showerhead than at a central portion of the showerhead; and
a second showerhead between the first showerhead and the substrate support.
2. The apparatus of claim 1 , wherein the chamber lid further comprises a first gas flow channel between the window and the first showerhead and a second gas flow channel between the first showerhead and the second showerhead.
3. The apparatus of claim 2, wherein the chamber lid further comprises a first annular recess that receives the first showerhead and a second annular recess that receives the second showerhead.
4. The apparatus of claim 3, wherein each of the first and second showerheads is substantially transparent to UV radiation.
5. The apparatus of claim 1 , wherein the plurality of through holes comprises a first plurality of through holes at a peripheral region of the first showerhead and a second plurality of through holes at a central region of the first showerhead, wherein each through hole of the first plurality has a first size and each through hole of the second plurality has a second size, and wherein the first size is larger than the second size.
6. The apparatus of claim 5, wherein the through holes of the first plurality and the second plurality are arranged in concentric circular ranks, the concentric circular ranks of the first plurality have a first spacing, the concentric circular ranks of the second plurality have a second spacing, and the second spacing is larger than the first spacing.
7. The apparatus of claim 6, wherein the second showerhead comprises a third plurality of through holes having uniform size and spacing.
8. The apparatus of claim 7, wherein each of the through holes of the first and second showerheads has a side wall, and at least one of the first showerhead and the second showerhead has a conformal coating over at least the side wall of each through hole.
9. An apparatus for processing a substrate, comprising:
a chamber enclosing a substrate support;
a UV source positioned to illuminate the substrate support;
a window separating the UV source from the substrate support;
a first showerhead between the window and the substrate support, the first showerhead having a first plurality of through holes at a peripheral portion thereof and a second plurality of through holes at a central portion thereof, wherein each through hole of the first plurality of through holes has a first diameter, each through hole of the second plurality of through holes has a second diameter, the first diameter is larger than the second diameter, the first plurality of through holes has a first spacing, the second plurality of through holes has a second spacing, and the first spacing is smaller than the second spacing; and
a second showerhead between the first showerhead and the substrate support, wherein the second showerhead has a third plurality of through holes with uniform size and spacing, wherein the first and second showerheads are each substantially UV transparent.
10. The apparatus of claim 9, wherein at least one of the first showerhead and the second showerhead has a coating.
1 1 . A method of cleaning a process chamber having an interior space, comprising:
providing a purge gas to a first portion of the interior space;
providing a first cleaning gas to a second portion of the interior space;
activating the first cleaning gas using UV radiation from UV lamps positioned outside the process chamber;
providing a second cleaning gas to the second portion of the interior space; activating the second cleaning gas using the UV radiation; and
exhausting the purge gas, the first cleaning gas, and the second cleaning gas through a side wall of the chamber.
12. The method of claim 1 1 , wherein the first cleaning gas is an oxygen- containing gas and the second cleaning gas is a remote plasma of a fluorine- containing gas.
13. The method of claim 12, wherein the second cleaning gas comprises NF3 and O2.
14. The method of claim 13, wherein the first cleaning gas comprises O3.
15. The method of claim 14, wherein the purge gas flows from the first portion to the second portion to mix with the first cleaning gas and the second cleaning gas.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11749507B2 (en) 2021-04-21 2023-09-05 Toto Ltd. Semiconductor manufacturing apparatus member and semiconductor manufacturing apparatus
WO2025147366A1 (en) * 2024-01-05 2025-07-10 Applied Materials, Inc. Apparatus and method for modulating ions and radical species in plasmas

Families Citing this family (398)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8083853B2 (en) * 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US8911553B2 (en) * 2010-10-19 2014-12-16 Applied Materials, Inc. Quartz showerhead for nanocure UV chamber
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US20120258259A1 (en) 2011-04-08 2012-10-11 Amit Bansal Apparatus and method for uv treatment, chemical treatment, and deposition
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US8872138B2 (en) * 2013-02-20 2014-10-28 Taiwan Semiconductor Manufacturing Co., Ltd. Gas delivery for uniform film properties at UV curing chamber
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9252024B2 (en) * 2013-05-17 2016-02-02 Applied Materials, Inc. Deposition chambers with UV treatment and methods of use
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
JP6360770B2 (en) * 2014-06-02 2018-07-18 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus
JP6001015B2 (en) * 2014-07-04 2016-10-05 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, program, and recording medium
JP6714978B2 (en) * 2014-07-10 2020-07-01 東京エレクトロン株式会社 Parts for plasma processing apparatus, plasma processing apparatus, and method for manufacturing parts for plasma processing apparatus
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US20160032451A1 (en) * 2014-07-29 2016-02-04 Applied Materials, Inc. Remote plasma clean source feed between backing plate and diffuser
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US20160177442A1 (en) * 2014-12-18 2016-06-23 Ervin Beloni Gas shield for vapor deposition
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US10240236B2 (en) * 2015-03-06 2019-03-26 Lam Research Corporation Clean resistant windows for ultraviolet thermal processing
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
JP6661283B2 (en) * 2015-05-14 2020-03-11 東京エレクトロン株式会社 Cleaning method and plasma processing method
US12281385B2 (en) * 2015-06-15 2025-04-22 Taiwan Semiconductor Manufacturing Co., Ltd. Gas dispenser and deposition apparatus using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US10325790B2 (en) * 2016-04-29 2019-06-18 Applied Materials, Inc. Methods and apparatus for correcting substrate deformity
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10504754B2 (en) * 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
KR102532607B1 (en) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and method of operating the same
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
KR102546317B1 (en) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Gas supply unit and substrate processing apparatus including the same
KR102762543B1 (en) 2016-12-14 2025-02-05 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR102700194B1 (en) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11694911B2 (en) 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
JP7176860B6 (en) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド Semiconductor processing chamber to improve precursor flow
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10790119B2 (en) * 2017-06-09 2020-09-29 Mattson Technology, Inc Plasma processing apparatus with post plasma gas injection
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
KR20190009245A (en) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. Methods for forming a semiconductor device structure and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
TWI815813B (en) 2017-08-04 2023-09-21 荷蘭商Ａｓｍ智慧財產控股公司 Showerhead assembly for distributing a gas within a reaction chamber
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
WO2019033052A1 (en) * 2017-08-11 2019-02-14 Applied Materials, Inc. Apparatus and methods for improving thermal chemical vapor deposition (cvd) uniformity
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
KR102491945B1 (en) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
CN107377533B (en) * 2017-09-12 2020-03-17 深圳市华星光电半导体显示技术有限公司 Ultraviolet irradiation device
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10424487B2 (en) 2017-10-24 2019-09-24 Applied Materials, Inc. Atomic layer etching processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
TWI791689B (en) 2017-11-27 2023-02-11 荷蘭商Ａｓｍ智慧財產控股私人有限公司 Apparatus including a clean mini environment
JP7214724B2 (en) 2017-11-27 2023-01-30 エーエスエム アイピー ホールディング ビー．ブイ． Storage device for storing wafer cassettes used in batch furnaces
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
KR102695659B1 (en) 2018-01-19 2024-08-14 에이에스엠 아이피 홀딩 비.브이. Method for depositing a gap filling layer by plasma assisted deposition
TWI799494B (en) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 Deposition method
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
KR102636427B1 (en) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. Substrate processing method and apparatus
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
TWI766433B (en) 2018-02-28 2022-06-01 美商應用材料股份有限公司 Systems and methods to form airgaps
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (en) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
KR102600229B1 (en) 2018-04-09 2023-11-10 에이에스엠 아이피 홀딩 비.브이. Substrate supporting device, substrate processing apparatus including the same and substrate processing method
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
TWI843623B (en) 2018-05-08 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
US12272527B2 (en) * 2018-05-09 2025-04-08 Asm Ip Holding B.V. Apparatus for use with hydrogen radicals and method of using same
KR102596988B1 (en) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate and a device manufactured by the same
TWI840362B (en) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (en) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing system
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
TWI871083B (en) 2018-06-27 2025-01-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Cyclic deposition processes for forming metal-containing material
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
CN108866505B (en) * 2018-08-02 2020-12-04 武汉华星光电半导体显示技术有限公司 Chemical vapor deposition equipment
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102707956B1 (en) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. Method for deposition of a thin film
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
CN110970344B (en) 2018-10-01 2024-10-25 Asmip控股有限公司 Substrate holding device, system including the same and method of using the same
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (en) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
KR102546322B1 (en) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
KR102605121B1 (en) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US12378665B2 (en) 2018-10-26 2025-08-05 Asm Ip Holding B.V. High temperature coatings for a preclean and etch apparatus and related methods
US11355620B2 (en) * 2018-10-31 2022-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and method of forming same
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR102748291B1 (en) 2018-11-02 2024-12-31 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and substrate processing apparatus including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
CN112424389A (en) * 2018-12-03 2021-02-26 株式会社爱发科 Film forming apparatus and film forming method
KR102636428B1 (en) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. A method for cleaning a substrate processing apparatus
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (en) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー Method and system for forming device structures using selective deposition of gallium nitride - Patents.com
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
TWI866480B (en) 2019-01-17 2024-12-11 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
KR102727227B1 (en) 2019-01-22 2024-11-07 에이에스엠 아이피 홀딩 비.브이. Semiconductor processing device
CN111524788B (en) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 Method for forming topologically selective films of silicon oxide
JP6677356B1 (en) * 2019-02-19 2020-04-08 株式会社明電舎 Atomic layer deposition method and atomic layer deposition apparatus
KR20200102357A (en) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for plug fill deposition in 3-d nand applications
TWI873122B (en) 2019-02-20 2025-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of filling a recess formed within a surface of a substrate, semiconductor structure formed according to the method, and semiconductor processing apparatus
KR102626263B1 (en) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. Cyclical deposition method including treatment step and apparatus for same
TWI845607B (en) 2019-02-20 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
TWI842826B (en) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing apparatus and method for processing substrate
KR102858005B1 (en) 2019-03-08 2025-09-09 에이에스엠 아이피 홀딩 비.브이. Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer
KR102782593B1 (en) 2019-03-08 2025-03-14 에이에스엠 아이피 홀딩 비.브이. Structure Including SiOC Layer and Method of Forming Same
KR102762833B1 (en) 2019-03-08 2025-02-04 에이에스엠 아이피 홀딩 비.브이. STRUCTURE INCLUDING SiOCN LAYER AND METHOD OF FORMING SAME
JP2020167398A (en) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー Door openers and substrate processing equipment provided with door openers
KR102809999B1 (en) 2019-04-01 2025-05-19 에이에스엠 아이피 홀딩 비.브이. Method of manufacturing semiconductor device
KR102897355B1 (en) 2019-04-19 2025-12-08 에이에스엠 아이피 홀딩 비.브이. Layer forming method and apparatus
KR20200125453A (en) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. Gas-phase reactor system and method of using same
KR102869364B1 (en) 2019-05-07 2025-10-10 에이에스엠 아이피 홀딩 비.브이. Method for Reforming Amorphous Carbon Polymer Film
KR102929471B1 (en) 2019-05-07 2026-02-20 에이에스엠 아이피 홀딩 비.브이. Chemical source vessel with dip tube
KR102929472B1 (en) 2019-05-10 2026-02-20 에이에스엠 아이피 홀딩 비.브이. Method of depositing material onto a surface and structure formed according to the method
JP7598201B2 (en) 2019-05-16 2024-12-11 エーエスエム・アイピー・ホールディング・ベー・フェー Wafer boat handling apparatus, vertical batch furnace and method
JP7612342B2 (en) 2019-05-16 2025-01-14 エーエスエム・アイピー・ホールディング・ベー・フェー Wafer boat handling apparatus, vertical batch furnace and method
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141002A (en) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. Method of using a gas-phase reactor system including analyzing exhausted gas
KR102918757B1 (en) 2019-06-10 2026-01-28 에이에스엠 아이피 홀딩 비.브이. Method for cleaning quartz epitaxial chambers
KR20200143254A (en) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR102911421B1 (en) 2019-07-03 2026-01-12 에이에스엠 아이피 홀딩 비.브이. Temperature control assembly for substrate processing apparatus and method of using same
JP7499079B2 (en) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー Plasma device using coaxial waveguide and substrate processing method
CN112216646B (en) 2019-07-10 2026-02-10 Asmip私人控股有限公司 Substrate support assembly and substrate processing apparatus including the thereof
KR102895115B1 (en) 2019-07-16 2025-12-03 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
TWI826704B (en) 2019-07-17 2023-12-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Radical assist ignition plasma system and method
KR102860110B1 (en) 2019-07-17 2025-09-16 에이에스엠 아이피 홀딩 비.브이. Methods of forming silicon germanium structures
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
TWI839544B (en) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming topology-controlled amorphous carbon polymer film
KR102903090B1 (en) 2019-07-19 2025-12-19 에이에스엠 아이피 홀딩 비.브이. Method of Forming Topology-Controlled Amorphous Carbon Polymer Film
CN112309843B (en) 2019-07-29 2026-01-23 Asmip私人控股有限公司 Selective deposition method for achieving high dopant incorporation
CN112309899B (en) 2019-07-30 2025-11-14 Asmip私人控股有限公司 Substrate processing equipment
CN112309900B (en) 2019-07-30 2025-11-04 Asmip私人控股有限公司 Substrate processing equipment
KR20210015655A (en) 2019-07-30 2021-02-10 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and method
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210018759A (en) 2019-08-05 2021-02-18 에이에스엠 아이피 홀딩 비.브이. Liquid level sensor for a chemical source vessel
KR102217160B1 (en) * 2019-08-07 2021-02-19 세메스 주식회사 Apparatus and method for treating substrate
KR20210018761A (en) 2019-08-09 2021-02-18 에이에스엠 아이피 홀딩 비.브이. heater assembly including cooling apparatus and method of using same
US11348784B2 (en) 2019-08-12 2022-05-31 Beijing E-Town Semiconductor Technology Co., Ltd Enhanced ignition in inductively coupled plasmas for workpiece processing
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP7810514B2 (en) 2019-08-21 2026-02-03 エーエスエム・アイピー・ホールディング・ベー・フェー Film-forming raw material mixed gas generating device and film-forming device
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
KR20210024423A (en) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Method for forming a structure with a hole
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
KR20260046529A (en) 2019-08-23 2026-04-07 램 리써치 코포레이션 Thermally controlled chandelier showerhead
KR102928101B1 (en) 2019-08-23 2026-02-13 에이에스엠 아이피 홀딩 비.브이. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
CN119980191A (en) 2019-08-28 2025-05-13 朗姆研究公司 Metal Deposition
KR102868968B1 (en) 2019-09-03 2025-10-10 에이에스엠 아이피 홀딩 비.브이. Methods and apparatus for depositing a chalcogenide film and structures including the film
KR102806450B1 (en) 2019-09-04 2025-05-12 에이에스엠 아이피 홀딩 비.브이. Methods for selective deposition using a sacrificial capping layer
KR102733104B1 (en) 2019-09-05 2024-11-22 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US12469693B2 (en) 2019-09-17 2025-11-11 Asm Ip Holding B.V. Method of forming a carbon-containing layer and structure including the layer
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (en) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 Method for forming topologically selective silicon oxide film through cyclic plasma enhanced deposition process
KR102948143B1 (en) 2019-10-08 2026-04-07 에이에스엠 아이피 홀딩 비.브이. Reactor system including a gas distribution assembly for use with activated species and method of using same
TW202128273A (en) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Gas injection system, reactor system, and method of depositing material on surface of substratewithin reaction chamber
TWI846953B (en) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing device
TWI846966B (en) 2019-10-10 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming a photoresist underlayer and structure including same
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (en) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of topology-selective film formation of silicon oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR102845724B1 (en) 2019-10-21 2025-08-13 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for selectively etching films
US11996292B2 (en) 2019-10-25 2024-05-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR102890638B1 (en) 2019-11-05 2025-11-25 에이에스엠 아이피 홀딩 비.브이. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR102861314B1 (en) 2019-11-20 2025-09-17 에이에스엠 아이피 홀딩 비.브이. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
KR20210065848A (en) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112951697B (en) 2019-11-26 2025-07-29 Asmip私人控股有限公司 Substrate processing apparatus
CN120432376A (en) 2019-11-29 2025-08-05 Asm Ip私人控股有限公司 Substrate processing equipment
CN112885692B (en) 2019-11-29 2025-08-15 Asmip私人控股有限公司 Substrate processing apparatus
JP7527928B2 (en) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー Substrate processing apparatus and substrate processing method
KR20210070898A (en) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
KR102943768B1 (en) 2019-12-19 2026-03-26 에이에스엠 아이피 홀딩 비.브이. Methods for filling a gap feature on a substrate and related semiconductor structures
JP7730637B2 (en) 2020-01-06 2025-08-28 エーエスエム・アイピー・ホールディング・ベー・フェー Gas delivery assembly, components thereof, and reactor system including same
TWI887322B (en) 2020-01-06 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Reactor system, lift pin, and processing method
CN114929935A (en) * 2020-01-06 2022-08-19 朗姆研究公司 Spray head with internally contoured face plate
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102882467B1 (en) 2020-01-16 2025-11-05 에이에스엠 아이피 홀딩 비.브이. Method of forming high aspect ratio features
KR102675856B1 (en) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. Method of forming thin film and method of modifying surface of thin film
TWI889744B (en) 2020-01-29 2025-07-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Contaminant trap system, and baffle plate stack
TW202513845A (en) 2020-02-03 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Semiconductor structures and methods for forming the same
KR20210100010A (en) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. Method and apparatus for transmittance measurements of large articles
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
KR102916725B1 (en) 2020-02-13 2026-01-23 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus including light receiving device and calibration method of light receiving device
KR20210103953A (en) 2020-02-13 2021-08-24 에이에스엠 아이피 홀딩 비.브이. Gas distribution assembly and method of using same
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TWI895326B (en) 2020-02-28 2025-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 System dedicated for parts cleaning
KR102943116B1 (en) 2020-03-04 2026-03-23 에이에스엠 아이피 홀딩 비.브이. Alignment fixture for a reactor system
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR20210116240A (en) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. Substrate handling device with adjustable joints
KR102775390B1 (en) 2020-03-12 2025-02-28 에이에스엠 아이피 홀딩 비.브이. Method for Fabricating Layer Structure Having Target Topological Profile
US12173404B2 (en) 2020-03-17 2024-12-24 Asm Ip Holding B.V. Method of depositing epitaxial material, structure formed using the method, and system for performing the method
CN113467198B (en) * 2020-03-31 2023-04-18 长鑫存储技术有限公司 Semiconductor device and method for manufacturing semiconductor structure
KR102755229B1 (en) 2020-04-02 2025-01-14 에이에스엠 아이피 홀딩 비.브이. Thin film forming method
TWI887376B (en) 2020-04-03 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for manufacturing semiconductor device
TWI888525B (en) 2020-04-08 2025-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Apparatus and methods for selectively etching silcon oxide films
KR20210128343A (en) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. Method of forming chromium nitride layer and structure including the chromium nitride layer
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR102901748B1 (en) 2020-04-21 2025-12-17 에이에스엠 아이피 홀딩 비.브이. Method for processing a substrate
KR102866804B1 (en) 2020-04-24 2025-09-30 에이에스엠 아이피 홀딩 비.브이. Vertical batch furnace assembly comprising a cooling gas supply
TW202539998A (en) 2020-04-24 2025-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Compositions and vessels including vanadium compounds, and methods and systems for stabilizing vanadium compounds
KR102934380B1 (en) 2020-04-24 2026-03-05 에이에스엠 아이피 홀딩 비.브이. Methods of forming structures including vanadium boride and vanadium phosphide layers
CN113555279A (en) 2020-04-24 2021-10-26 Asm Ip私人控股有限公司 Methods of forming vanadium nitride-containing layers and structures comprising the same
KR20210132600A (en) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
KR102783898B1 (en) 2020-04-29 2025-03-18 에이에스엠 아이피 홀딩 비.브이. Solid source precursor vessel
KR20210134869A (en) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Fast FOUP swapping with a FOUP handler
JP7726664B2 (en) 2020-05-04 2025-08-20 エーエスエム・アイピー・ホールディング・ベー・フェー Substrate processing system for processing a substrate
JP7736446B2 (en) 2020-05-07 2025-09-09 エーエスエム・アイピー・ホールディング・ベー・フェー Reactor system with tuned circuit
KR102788543B1 (en) 2020-05-13 2025-03-27 에이에스엠 아이피 홀딩 비.브이. Laser alignment fixture for a reactor system
KR102936676B1 (en) 2020-05-15 2026-03-10 에이에스엠 아이피 홀딩 비.브이. Methods for silicon germanium uniformity control using multiple precursors
KR102905441B1 (en) 2020-05-19 2025-12-30 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR102795476B1 (en) 2020-05-21 2025-04-11 에이에스엠 아이피 홀딩 비.브이. Structures including multiple carbon layers and methods of forming and using same
KR20210145079A (en) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. Flange and apparatus for processing substrates
TWI873343B (en) 2020-05-22 2025-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Reaction system for forming thin film on substrate
KR20210146802A (en) 2020-05-26 2021-12-06 에이에스엠 아이피 홀딩 비.브이. Method for depositing boron and gallium containing silicon germanium layers
TWI876048B (en) 2020-05-29 2025-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing device
TW202212620A (en) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Apparatus for processing substrate, method of forming film, and method of controlling apparatus for processing substrate
KR20210156219A (en) 2020-06-16 2021-12-24 에이에스엠 아이피 홀딩 비.브이. Method for depositing boron containing silicon germanium layers
TWI908816B (en) 2020-06-24 2025-12-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming a layer provided with silicon
TWI873359B (en) 2020-06-30 2025-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing method
US12431354B2 (en) 2020-07-01 2025-09-30 Asm Ip Holding B.V. Silicon nitride and silicon oxide deposition methods using fluorine inhibitor
KR102707957B1 (en) 2020-07-08 2024-09-19 에이에스엠 아이피 홀딩 비.브이. Method for processing a substrate
KR20220010438A (en) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. Structures and methods for use in photolithography
TWI878570B (en) 2020-07-20 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method and system for depositing molybdenum layers
KR20220011092A (en) 2020-07-20 2022-01-27 에이에스엠 아이피 홀딩 비.브이. Method and system for forming structures including transition metal layers
TW202219303A (en) 2020-07-27 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Thin film deposition process
KR20220020210A (en) 2020-08-11 2022-02-18 에이에스엠 아이피 홀딩 비.브이. Methods for Depositing a Titinum Aluminun Carbide Film Structuru on a Substrate and Releated Semiconductor Structures
KR102915124B1 (en) 2020-08-14 2026-01-19 에이에스엠 아이피 홀딩 비.브이. Method for processing a substrate
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
TWI911263B (en) 2020-08-25 2026-01-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for cleaning a substrate, method for selectively depositing, and reaction system
TW202534193A (en) 2020-08-26 2025-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming metal silicon oxide layer and metal silicon oxynitride layer
TWI911265B (en) 2020-08-27 2026-01-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming patterned structures, method of manipulating mechanical property, and device structure
TWI904232B (en) 2020-09-10 2025-11-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods for depositing gap filing fluids and related systems and devices
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
KR20220036866A (en) 2020-09-16 2022-03-23 에이에스엠 아이피 홀딩 비.브이. Silicon oxide deposition method
KR102620048B1 (en) 2020-09-16 2024-01-02 삼성디스플레이 주식회사 Etching device and method of manufacturing display device using same
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TWI889903B (en) 2020-09-25 2025-07-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Semiconductor processing method
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
TW202229612A (en) 2020-10-06 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method and system for forming silicon nitride on a sidewall of a feature
KR20220045900A (en) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. Deposition method and an apparatus for depositing a silicon-containing material
CN114293174A (en) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 Gas supply unit and substrate processing apparatus including the same
KR102855834B1 (en) 2020-10-14 2025-09-04 에이에스엠 아이피 홀딩 비.브이. Method of Depositing Material on Stepped Structure
KR102873665B1 (en) 2020-10-15 2025-10-17 에이에스엠 아이피 홀딩 비.브이. Method of manufacturing semiconductor device, and substrate treatment apparatus using ether-cat
TW202217037A (en) 2020-10-22 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of depositing vanadium metal, structure, device and a deposition assembly
TW202223136A (en) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming layer on substrate, and semiconductor processing system
TW202229620A (en) 2020-11-12 2022-08-01 特文特大學 Deposition system, method for controlling reaction condition, method for depositing
TW202229795A (en) 2020-11-23 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 A substrate processing apparatus with an injector
TW202235649A (en) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods for filling a gap and related systems and devices
TW202235675A (en) 2020-11-30 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Injector, and substrate processing apparatus
KR20220077875A (en) 2020-12-02 2022-06-09 에이에스엠 아이피 홀딩 비.브이. Cleaning fixture for showerhead assemblies
US12255053B2 (en) 2020-12-10 2025-03-18 Asm Ip Holding B.V. Methods and systems for depositing a layer
US12159788B2 (en) 2020-12-14 2024-12-03 Asm Ip Holding B.V. Method of forming structures for threshold voltage control
CN114639631A (en) 2020-12-16 2022-06-17 Asm Ip私人控股有限公司 Fixing device for measuring jumping and swinging
TW202232639A (en) 2020-12-18 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Wafer processing apparatus with a rotatable table
KR20220090438A (en) 2020-12-22 2022-06-29 에이에스엠 아이피 홀딩 비.브이. Transition metal deposition method
TW202226899A (en) 2020-12-22 2022-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Plasma treatment device having matching box
KR20220090435A (en) 2020-12-22 2022-06-29 에이에스엠 아이피 홀딩 비.브이. Precursor capsule, vessel and method
JP7108983B1 (en) 2021-04-21 2022-07-29 Toto株式会社 Components for semiconductor manufacturing equipment and semiconductor manufacturing equipment
JP7197036B2 (en) * 2021-04-21 2022-12-27 Toto株式会社 Components for semiconductor manufacturing equipment and semiconductor manufacturing equipment
US11837448B2 (en) 2021-04-27 2023-12-05 Applied Materials, Inc. High-temperature chamber and chamber component cleaning and maintenance method and apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
CN116145105A (en) * 2021-11-22 2023-05-23 中芯国际集成电路制造(上海)有限公司 Semiconductor manufacturing equipment
USD1099184S1 (en) 2021-11-29 2025-10-21 Asm Ip Holding B.V. Weighted lift pin
USD1060598S1 (en) 2021-12-03 2025-02-04 Asm Ip Holding B.V. Split showerhead cover
CN114990528B (en) * 2022-05-16 2023-11-03 武汉理工大学 Device and method for improving temperature field in cavity of CVD equipment
JP2026500047A (en) * 2022-12-30 2026-01-05 ジュスン エンジニアリング カンパニー リミテッド Substrate processing apparatus and substrate processing method
US20250132175A1 (en) * 2023-10-18 2025-04-24 Applied Materials, Inc. Actively controlled window for epitaxial deposition process temperature control
US20250329527A1 (en) * 2024-04-17 2025-10-23 Applied Materials, Inc. Microwave apparatus for dual mode operation and methods of use
KR20260040779A (en) * 2024-09-19 2026-03-26 피에스케이홀딩스 (주) Substrate processing appratus including cooling module

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046029A (en) * 1983-08-24 1985-03-12 Hitachi Ltd semiconductor manufacturing equipment
JPH0697075A (en) * 1992-09-14 1994-04-08 Toshiba Corp Plasma cleaning method for thin film deposition chamber
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US5580421A (en) * 1994-06-14 1996-12-03 Fsi International Apparatus for surface conditioning
KR100243446B1 (en) * 1997-07-19 2000-02-01 김상호 Showerhead apparatus having plasma generating portions
US5997649A (en) * 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
US6182603B1 (en) * 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
JP5079949B2 (en) * 2001-04-06 2012-11-21 東京エレクトロン株式会社 Processing apparatus and processing method
TWI283899B (en) 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
JP4231417B2 (en) * 2004-01-07 2009-02-25 パナソニック株式会社 Substrate processing apparatus and cleaning method thereof
US20050161060A1 (en) * 2004-01-23 2005-07-28 Johnson Andrew D. Cleaning CVD chambers following deposition of porogen-containing materials
US8034183B2 (en) * 2005-02-02 2011-10-11 Tokyo Electron Limited Cleaning method and plasma processing method
US20060196525A1 (en) * 2005-03-03 2006-09-07 Vrtis Raymond N Method for removing a residue from a chamber
US20070256635A1 (en) * 2006-05-02 2007-11-08 Applied Materials, Inc. A Delaware Corporation UV activation of NH3 for III-N deposition
JP5258241B2 (en) * 2006-09-19 2013-08-07 日本エー・エス・エム株式会社 Method for cleaning a UV irradiation chamber
US7789965B2 (en) * 2006-09-19 2010-09-07 Asm Japan K.K. Method of cleaning UV irradiation chamber
US7476291B2 (en) * 2006-09-28 2009-01-13 Lam Research Corporation High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation
US20100065758A1 (en) * 2008-09-16 2010-03-18 Tokyo Electron Limited Dielectric material treatment system and method of operating
US20110198034A1 (en) * 2010-02-11 2011-08-18 Jennifer Sun Gas distribution showerhead with coating material for semiconductor processing
KR101123829B1 (en) * 2010-02-12 2012-03-20 국제엘렉트릭코리아 주식회사 Substrate treating apparatus
US8911553B2 (en) * 2010-10-19 2014-12-16 Applied Materials, Inc. Quartz showerhead for nanocure UV chamber
WO2012074816A2 (en) 2010-11-30 2012-06-07 Applied Materials, Inc. Method and apparatus for modulating wafer treatment profile in uv chamber

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11749507B2 (en) 2021-04-21 2023-09-05 Toto Ltd. Semiconductor manufacturing apparatus member and semiconductor manufacturing apparatus
WO2025147366A1 (en) * 2024-01-05 2025-07-10 Applied Materials, Inc. Apparatus and method for modulating ions and radical species in plasmas

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