WO2014101337A1 - 母排型功率模块支架 - Google Patents

母排型功率模块支架 Download PDF

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Publication number
WO2014101337A1
WO2014101337A1 PCT/CN2013/071336 CN2013071336W WO2014101337A1 WO 2014101337 A1 WO2014101337 A1 WO 2014101337A1 CN 2013071336 W CN2013071336 W CN 2013071336W WO 2014101337 A1 WO2014101337 A1 WO 2014101337A1
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WO
WIPO (PCT)
Prior art keywords
metal plate
power module
leg
busbar
support arm
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Application number
PCT/CN2013/071336
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English (en)
French (fr)
Inventor
程士东
盛况
汪涛
郭清
谢刚
Original Assignee
浙江大学
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Application filed by 浙江大学 filed Critical 浙江大学
Publication of WO2014101337A1 publication Critical patent/WO2014101337A1/zh

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/14—Mounting supporting structure in casing or on frame or rack
    • H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
    • H05K7/1427—Housings
    • H05K7/1432—Housings specially adapted for power drive units or power converters
    • H05K7/14329—Housings specially adapted for power drive units or power converters specially adapted for the configuration of power bus bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a semiconductor power module, and more particularly to a power module bracket having a busbar.
  • the power module refers to a module in which a plurality of semiconductor chips are packaged together, and mainly includes a metal substrate, a double-sided copper clad laminate, and an extraction bracket of the original semiconductor chip.
  • the chip is placed on the double-sided copper-clad board, and the double-sided copper-clad board is placed on the metal substrate by soldering, and the response electrode of the chip is led to the upper copper layer of the double-sided copper-clad board, and then led out through the metal bracket, thereby realizing the external device. Point connection.
  • the power semiconductor module's brackets have been electrically connected to the module with two simple discrete brackets.
  • This conventional bracket has the advantage of being simple to manufacture and inexpensive.
  • the parasitic parameters brought by this conventional bracket especially refer to the parasitic inductance has a large negative impact on the electrical characteristics of the module, such as overvoltage in the power chip during the shutdown process, resulting in module damage.
  • the presence of these parasitic parameters causes the module to participate in high frequency oscillations in the application, which also puts the power module at risk of damage.
  • the technical problem to be solved by the present invention is that the traditional power module structure is applied in the application. Insufficient, a new type of self-contained busbar type power module bracket is provided.
  • the invention is made of all metal materials, and the respective insulating materials are used to achieve electrical isolation from each other.
  • the busbar type power module bracket includes a first arm as an upper row of the busbar and a second arm as a lower row of the busbar.
  • the first arm includes a first metal plate and a first leg vertically downward from the first metal plate, the second arm including a second metal plate and a second leg vertically downward from the second metal plate.
  • the first leg and the second leg are correspondingly offset from each other at a position of the first arm and the second arm, and the first metal plate has a hole extending from the power module on the second arm, the second metal
  • the plate has a hole extending from the first leg, and the first metal plate and the second metal plate are filled with an insulating material, so that the first metal plate and the second metal plate can be close to each other and exhibit capacitance;
  • the first leg and the second leg are both plate-shaped legs and are L-shaped at the end. Based on the above technical solutions, the present invention can also adopt the following further solutions:
  • the bracket is made of a conductive metal, and the conductive metal may be copper, iron, aluminum, and an alloy of any two or three of copper, iron, and aluminum.
  • the power module may be any one of an IGBT module, a MOSFET module, a JFET module, an IPM module, or a novel material semiconductor module.
  • the bracket includes two arm arms that are connected to each other by a busbar type, and thus have a busbar characteristic.
  • the present invention comprises two first metal arms and a second arm that cooperate with each other, and the electrical connection to the power module is realized by a structure similar to the busbar. Pick up.
  • the technical solution utilizes the capacitive characteristics of the busbar to minimize the parasitic inductance of the power module, increases the service life of the module, improves the performance of the module, and requires only metal material manufacturing, and the process is relatively simple.
  • FIG. 1 is a top plan view of a first arm of the present invention.
  • Figure 2 is a schematic view of the first arm of the present invention.
  • FIG 3 is a top plan view of a second arm of the present invention.
  • Figure 4 is a schematic view of the second arm of the present invention.
  • Figure 5 is a top plan view of the present invention.
  • Figure 6 is a schematic illustration of the invention.
  • the busbar type power module bracket 1 of the present invention comprises a first arm 2 as an upper row of a DC busbar and a second arm 3 as a lower row of a DC busbar, the first arm 2 comprising a first metal plate 21 and a first leg 22 vertically downward from the first metal plate 21, the second carrier arm 3 including a second metal plate 31 and a second leg 32 vertically downward from the second metal plate 31
  • the first leg 22 and the second leg 32 are offset from each other at positions of the first arm 2 and the second arm 3, and the first metal plate 21 has a power module protruding from the second arm 3.
  • the second metal plate 31 has a hole extending from the first leg 22, and the first metal plate 21 and the second metal plate 31 are filled with an insulating material such that the first metal plate 21 and the second metal plate 32 can be close to each other and present in a capacitive manner;
  • the first leg 22 and the second leg 32 are both plate-shaped legs and are L-shaped at the end to increase the standing stability of the module.
  • the bracket is made of a conductive metal, and the conductive metal may be copper, iron, aluminum, and an alloy of any two or three of copper, iron, and aluminum, and the process is relatively simple.
  • the power module may be any one of an IGBT module, a MOSFET module, a JFET module, an IPM module, or a novel material semiconductor module.
  • the bracket includes two arms that are connected to each other by a busbar type, and thus have a busbar characteristic.
  • the first arm shown in Figures 1 and 2 can be used to act as the upper row of the DC bus.
  • the second arm shown in Figures 3 and 4 can be used as the lower row of the DC card.
  • the busbar type power module bracket structure is formed by combining the figures shown in Figs. 5 and 6.
  • the basic principle of the present invention is that two metal plates that are close together exhibit capacitive characteristics. Moreover, the larger the surface area of the metal plate, the stronger the capacitive property, and the closer the distance between the metal plates is, the stronger the capacitive property is. The capacitive characteristics are presented, and the parasitic inductance is reduced, and even the entire power module is capacitive.
  • the gap between the two arms requires insulation to achieve electrical insulation between each other.
  • the mechanical stress of the module can be improved, and it is absolutely avoided that the suspension arms of the two bracket arms may be short-circuited due to deformation when subjected to external stress. Therefore, the two arms must be filled with insulating material.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

提供一种自带母排型功率模块支架。母排型功率模块支架包括第一架臂（2）及第二架臂（3），第一架臂（2）包括第一金属板（21）及第一支脚（22），第二架臂（3）包括第二金属板（31）及第二支脚（32），第一支脚（22）与第二支脚（32）对应在第一架臂（2）与第二架臂（3）的位置相互错开，第一金属板（21）上具有第二架臂（3）上功率模块伸出的孔，第二金属板（31）具有第一支脚（22）伸出的孔，第一金属板（21）与第二金属板（31）间填充有绝缘材料；第一支脚（22）与第二支脚（32）都为板状支脚，并在末端呈L型。两个相互配合的金属第一架臂（2）和第二架臂（3），采用类似母排的结构实现对功率模块的电气连接。利用母排的容性特性最大限度的减小功率模块的寄生电感，增加了模块使用寿命，提升了模块的使用性能，仅需金属材料制造，工艺相对简单。

Description

母排型功率模块支架 技术领域
本发明涉及半导体功率模块，尤其涉及一种自身带有母排的功率 模块支架。
背景技术
功率模块是指将多个半导体芯片封装在一起的模组，其主要包括 金属基板、 双面覆铜板、 半导体芯片原件的引出支架。 芯片置于双面 覆铜板之上， 双面覆铜板通过焊锡置于金属基板之上， 芯片的响应电 极引到双面覆铜板的上铜层上， 再通过金属支架引出， 从而和外部装 置实现点连接。
长期以来，功率半导体模块的支架都是以简单的两个分立支架来 实现模块的电气连接。这种传统的支架具有制作简单和价格低廉的优 点。然而这种传统支架所带来的寄生参数尤其是指寄生电感对模块的 电气特性具有较大的负面影响，比如在关断过程中会给功率芯片带来 过压从而导致模块损坏。同时这些寄生参数的存在会使得模块在应用 中参与高频振荡， 也使得功率模块具有损坏的风险。
鉴于此， 迫切需要发明一种新的功率模块支架， 可以极大的降低 功率模块的寄生电感， 甚至呈现容性特性。
发明内容
本发明所要解决的技术问题是针对传统功率模块结构在应用中 的不足， 提供一种新型自带母排型功率模块支架。本发明全部金属材 料制成， 利用相应的绝缘材料来实现彼此的电气隔离。
为了解决上述技术问题， 本发明通过下述技术方案得以解决： 所述母排型功率模块支架包括作为母排的上排的第一架臂以及 作为及母排的下排的第二架臂，所述第一架臂包括第一金属板以及与 第一金属板垂直向下的第一支脚，所述第二架臂包括第二金属板以及 与第二金属板垂直向下的第二支脚，所述第一支脚与第二支脚对应在 第一架臂与第二架臂的位置相互错开，所述第一金属板上具有第二架 臂上功率模块伸出的孔， 所述第二金属板具有第一支脚伸出的孔， 所 述第一金属板与第二金属板间填充有绝缘材料，使得第一金属板与第 二金属板可相互靠近并呈现容性；
所述第一支脚与第二支脚都为板状支脚， 并在末端呈 L型。 在采用以上技术方案的基础上，本发明还可以采用以下进一步方 案：
所述支架采用导电金属，所述导电金属可以为铜、铁、铝以及铜、 铁、 铝中的任意两种或三种都具有的合金。
所述功率模块可以为 IGBT模块、 MOSFET模块、 JFET模块、 IPM模块或者新型材料半导体模块中的任意一种。
所述支架包括两个架臂彼此之间采用母排型连接，故而具有母排 特性。
由于采用了本发明的技术方案，本发明包括两个相互配合的金属 第一架臂和第二架臂，采用类似母排的结构实现对功率模块的电气连 接。本技术方案利用母排的容性特性最大限度的减小功率模块的寄生 电感， 增加了模块使用寿命， 提升了模块的使用性能， 且仅需金属材 料制造， 工艺相对简单。 附图说明
图 1为本发明第一架臂俯视示意图。
图 2为本发明第一架臂示意图。
图 3为本发明第二架臂俯视示意图。
图 4为本发明第二架臂示意图。
图 5为本发明的俯视示意图。
图 6为本发明的示意图。
具体实施方式
参考附图。
本发明所述的母排型功率模块支架 1 包括作为直流母排的上排 的第一架臂 2以及作为及直流母排的下排的第二架臂 3， 所述第一架 臂 2包括第一金属板 21 以及与第一金属板 21垂直向下的第一支脚 22，所述第二母架臂 3包括第二金属板 31以及与第二金属板 31垂直 向下的第二支脚 32， 所述第一支脚 22与第二支脚 32对应在第一架 臂 2与第二架臂 3的位置相互错开， 所述第一金属板 21上具有第二 架臂 3上功率模块伸出的孔 23，所述第二金属板 31具有第一支脚 22 伸出的孔， 所述第一金属板 21与第二金属板 31间填充有绝缘材料， 使得第一金属板 21与第二金属板 32可相互靠近并呈现容性； 所述第一支脚 22与第二支脚 32都为板状支脚， 并在末端呈 L 型， 用以增加模块的站立稳定性。
所述支架采用导电金属，所述导电金属可以为铜、铁、铝以及铜、 铁、 铝中的任意两种或三种都具有的合金， 工艺相对简单。
所述功率模块可以为 IGBT模块、 MOSFET模块、 JFET模块、 IPM模块或者新型材料半导体模块中的任意一种。
支架包括两个架臂彼此之间采用母排型连接， 故而具有母排特 性。 图 1和图 2所示第一架臂， 该架臂可用于充当直流母排的上排。 图 3和图 4所示第二架臂， 可用于充当直流母牌的下排。通过图 5和 图 6所示图进行组合从而形成母排型功率模块支架结构。本发明的基 本原理是， 两块相互靠近的金属板呈现电容特性。且金属板的表面积 越大容性越强， 金属板之间的距离越近容性特性越强。呈现容性特性 则寄生电感下降， 甚至整个功率模块呈现容性。两个架臂之间的空隙 需要采用绝缘材料来实现彼此之间的电气绝缘。同时填充了绝缘材料 之后， 可以提高模块的机械应力， 防治由于两支架臂悬空会在受外部 应力时可能会由于形变而彼此短接， 这是要绝对避免的。所以两架臂 之间必须填充上绝缘材料。
本发明的所提及的实施例通过支架连接脚的位置和形状的改变 也应属于本发明所包含的范围。 同时， 通过其它方式实现两架臂之间 的镂空连接也属于本发明的包含范围。
总之， 以上所述仅为本发明的较佳实施例， 凡依本发明申请专利 范围所作的均等变化与修饰， 皆应属本发明专利的涵盖范围。

Claims

权 利 要 求 书
1. 母排型功率模块支架， 其特征在于： 所述母排型功率模块支 架包括作为母排的上排的第一架臂以及作为及母排的下排的第二架 臂，所述第一架臂包括第一金属板以及与第一金属板垂直向下的第一 支脚，所述第二架臂包括第二金属板以及与第二金属板垂直向下的第 二支脚，所述第一支脚与第二支脚对应在第一架臂与第二架臂的位置 相互错开， 所述第一金属板上具有第二架臂上功率模块伸出的孔， 所 述第二金属板具有第一支脚伸出的孔，所述第一金属板与第二金属板 间填充有绝缘材料，使得第一金属板与第二金属板可相互靠近并呈现 所述第一支脚与第二支脚都为板状支脚， 并在末端呈 L型。
2、 根据权利要求 1所述的母排型功率模块支架， 其特征在于所 述支架采用导电金属， 所述导电金属可以为铜、 铁、 铝以及铜、 铁、 铝中的任意两种或三种都具有的合金。
3、 根据权利要求 1所述的母排型功率模块支架， 其特征在于所 述功率模块可以为 IGBT模块、 MOSFET模块、 JFET模块、 IPM模 块或者新型材料半导体模块中的任意一种。
4. 根据权利要求 1 所述的母排型功率模块支架， 其特征在于所 述支架包括两个架臂彼此之间采用母排型连接， 故而具有母排特性。
PCT/CN2013/071336 2012-12-25 2013-02-04 母排型功率模块支架 WO2014101337A1 (zh)

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CN104617071B (zh) * 2015-01-19 2017-08-08 株洲南车时代电气股份有限公司 功率端子组及功率电子模块

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CN102244066A (zh) * 2011-08-05 2011-11-16 株洲南车时代电气股份有限公司 一种功率半导体模块

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Publication number Priority date Publication date Assignee Title
US5528073A (en) * 1994-07-05 1996-06-18 Allen-Bradley Company, Inc. Bus bar having reduced parasitic inductances and equal current path lengths
CN201674382U (zh) * 2010-05-07 2010-12-15 鞍山众鑫电器制造有限公司 板式容性母排
CN102244066A (zh) * 2011-08-05 2011-11-16 株洲南车时代电气股份有限公司 一种功率半导体模块

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