CN103050448B - 母排型功率模块支架 - Google Patents

母排型功率模块支架 Download PDF

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Publication number
CN103050448B
CN103050448B CN201210574053.5A CN201210574053A CN103050448B CN 103050448 B CN103050448 B CN 103050448B CN 201210574053 A CN201210574053 A CN 201210574053A CN 103050448 B CN103050448 B CN 103050448B
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boom
leg
metallic plate
busbar
module
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CN103050448A (zh
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程士东
盛况
汪涛
郭清
谢刚
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Zhejiang University ZJU
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Zhejiang University ZJU
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00Constructional details common to different types of electric apparatus
    • H05K7/14Mounting supporting structure in casing or on frame or rack
    • H05K7/1422Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
    • H05K7/1427Housings
    • H05K7/1432Housings specially adapted for power drive units or power converters
    • H05K7/14329Housings specially adapted for power drive units or power converters specially adapted for the configuration of power bus bars
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

本发明提供一种新型自带母排型功率模块支架。母排型功率模块支架包括第一架臂及第二架臂,第一架臂包括第一金属板及第一支脚,第二架臂包括第二金属板及第二支脚,第一支脚与第二支脚对应在第一架臂与第二架臂的位置相互错开,第一金属板上具有第二架臂上功率模块伸出的孔,第二金属板具有第一支脚伸出的孔,第一金属板与第二金属板间填充有绝缘材料;第一支脚与第二支脚都为板状支脚,并在末端呈L型。本发明包括两个相互配合的金属第一架臂和第二架臂,采用类似母排的结构实现对功率模块的电气连接。本技术方案利用母排的容性特性最大限度的减小功率模块的寄生电感,增加了模块使用寿命,提升了模块的使用性能,仅需金属材料制造,工艺相对简单。

Description

母排型功率模块支架
技术领域
本发明涉及半导体功率模块,尤其涉及一种自身带有母排的功率模块支架。
背景技术
功率模块是指将多个半导体芯片封装在一起的模组,其主要包括金属基板、双面覆铜板、半导体芯片原件的引出支架。芯片置于双面覆铜板之上,双面覆铜板通过焊锡置于金属基板之上,芯片的响应电极引到双面覆铜板的上铜层上,再通过金属支架引出,从而和外部装置实现点连接。
长期以来,功率半导体模块的支架都是以简单的两个分立支架来实现模块的电气连接。这种传统的支架具有制作简单和价格低廉的优点。然而这种传统支架所带来的寄生参数尤其是指寄生电感对模块的电气特性具有较大的负面影响,比如在关断过程中会给功率芯片带来过压从而导致模块损坏。同时这些寄生参数的存在会使得模块在应用中参与高频振荡,也使得功率模块具有损坏的风险。
鉴于此,迫切需要发明一种新的功率模块支架,可以极大的降低功率模块的寄生电感,甚至呈现容性特性。
发明内容
本发明所要解决的技术问题是针对传统功率模块结构在应用中的不足,提供一种新型自带母排型功率模块支架。本发明全部金属材料制成,利用相应的绝缘材料来实现彼此的电气隔离。
为了解决上述技术问题,本发明通过下述技术方案得以解决:
所述母排型功率模块支架包括作为母排的上排的第一架臂以及作为及母排的下排的第二架臂,所述第一架臂包括第一金属板以及与第一金属板垂直向下的第一支脚,所述第二架臂包括第二金属板以及与第二金属板垂直向下的第二支脚,所述第一支脚与第二支脚对应在第一架臂与第二架臂的位置相互错开,所述第一金属板上具有第二架臂上功率模块伸出的孔,所述第二金属板具有第一支脚伸出的孔,所述第一金属板与第二金属板间填充有绝缘材料,使得第一金属板与第二金属板可相互靠近并呈现容性;
所述第一支脚与第二支脚都为板状支脚,并在末端呈L型。
在采用以上技术方案的基础上,本发明还可以采用以下进一步方案:
所述支架采用导电金属,所述导电金属可以为铜、铁、铝以及铜、铁、铝中的任意两种或三种都具有的合金。
所述功率模块可以为IGBT模块、MOSFET模块、JFET模块、IPM模块或者新型材料半导体模块中的任意一种。
所述支架包括两个架臂彼此之间采用母排型连接,故而具有母排特性。
由于采用了本发明的技术方案,本发明包括两个相互配合的金属第一架臂和第二架臂,采用类似母排的结构实现对功率模块的电气连接。本技术方案利用母排的容性特性最大限度的减小功率模块的寄生电感,增加了模块使用寿命,提升了模块的使用性能,且仅需金属材料制造,工艺相对简单。
附图说明
图1为本发明第一架臂俯视示意图。
图2为本发明第一架臂示意图。
图3为本发明第二架臂俯视示意图。
图4为本发明第二架臂示意图。
图5为本发明的俯视示意图。
图6为本发明的示意图。
具体实施方式
参考附图。
本发明所述的母排型功率模块支架1包括作为直流母排的上排的第一架臂2以及作为及直流母排的下排的第二架臂3,所述第一架臂2包括第一金属板21以及与第一金属板21垂直向下的第一支脚22,所述第二母架臂3包括第二金属板31以及与第二金属板31垂直向下的第二支脚32,所述第一支脚22与第二支脚32对应在第一架臂2与第二架臂3的位置相互错开,所述第一金属板21上具有第二架臂3上功率模块伸出的孔23,所述第二金属板31具有第一支脚22伸出的孔,所述第一金属板21与第二金属板31间填充有绝缘材料,使得第一金属板21与第二金属板32可相互靠近并呈现容性;
所述第一支脚22与第二支脚32都为板状支脚,并在末端呈L型,用以增加模块的站立稳定性。
所述支架采用导电金属,所述导电金属可以为铜、铁、铝以及铜、铁、铝中的任意两种或三种都具有的合金,工艺相对简单。
所述功率模块可以为IGBT模块、MOSFET模块、JFET模块、IPM模块或者新型材料半导体模块中的任意一种。
支架包括两个架臂彼此之间采用母排型连接,故而具有母排特性。图1和图2所示第一架臂,该架臂可用于充当直流母排的上排。图3和图4所示第二架臂,可用于充当直流母牌的下排。通过图5和图6所示图进行组合从而形成母排型功率模块支架结构。本发明的基本原理是,两块相互靠近的金属板呈现电容特性。且金属板的表面积越大容性越强,金属板之间的距离越近容性特性越强。呈现容性特性则寄生电感下降,甚至整个功率模块呈现容性。两个架臂之间的空隙需要采用绝缘材料来实现彼此之间的电气绝缘。同时填充了绝缘材料之后,可以提高模块的机械应力,防治由于两支架臂悬空会在受外部应力时可能会由于形变而彼此短接,这是要绝对避免的。所以两架臂之间必须填充上绝缘材料。
本发明的所提及的实施例通过支架连接脚的位置和形状的改变也应属于本发明所包含的范围。同时,通过其它方式实现两架臂之间的镂空连接也属于本发明的包含范围。
总之,以上所述仅为本发明的较佳实施例,凡依本发明申请专利范围所作的均等变化与修饰,皆应属本发明专利的涵盖范围。

Claims (1)

1.母排型功率模块支架,其特征在于:所述母排型功率模块支架包括作为母排的上排的第一架臂以及作为及母排的下排的第二架臂,所述第一架臂包括第一金属板以及与第一金属板垂直向下的第一支脚,所述第二架臂包括第二金属板以及与第二金属板垂直向下的第二支脚,所述第一支脚与第二支脚对应在第一架臂与第二架臂的位置相互错开,所述第一金属板上具有第二架臂上功率模块伸出的孔,所述第二金属板具有第一支脚伸出的孔,所述第一金属板与第二金属板间填充有绝缘材料,使得第一金属板与第二金属板可相互靠近并呈现容性;
所述第一支脚与第二支脚都为板状支脚,并在末端呈L型;
所述支架采用导电金属,所述导电金属可以为铜、铁、铝以及铜、铁、铝中的任意两种或三种都具有的合金;
所述功率模块可以为IGBT模块、MOSFET模块、JFET模块、IPM模块或者新型材料半导体模块中的任意一种;
所述支架包括两个架臂彼此之间采用母排型连接,故而具有母排特性。
CN201210574053.5A 2012-12-25 2012-12-25 母排型功率模块支架 Expired - Fee Related CN103050448B (zh)

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PCT/CN2013/071336 WO2014101337A1 (zh) 2012-12-25 2013-02-04 母排型功率模块支架

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CN107248508B (zh) * 2015-01-19 2019-12-27 株洲中车时代电气股份有限公司 功率端子组及功率电子模块

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391919A (en) * 1993-10-22 1995-02-21 International Rectifier Corporation Semiconductor power module with identical mounting frames
CN102244066A (zh) * 2011-08-05 2011-11-16 株洲南车时代电气股份有限公司 一种功率半导体模块

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US5528073A (en) * 1994-07-05 1996-06-18 Allen-Bradley Company, Inc. Bus bar having reduced parasitic inductances and equal current path lengths
CN201674382U (zh) * 2010-05-07 2010-12-15 鞍山众鑫电器制造有限公司 板式容性母排

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391919A (en) * 1993-10-22 1995-02-21 International Rectifier Corporation Semiconductor power module with identical mounting frames
CN102244066A (zh) * 2011-08-05 2011-11-16 株洲南车时代电气股份有限公司 一种功率半导体模块

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