WO2014089437A1 - Method and apparatus for transfer of films among substrates - Google Patents

Method and apparatus for transfer of films among substrates Download PDF

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Publication number
WO2014089437A1
WO2014089437A1 PCT/US2013/073585 US2013073585W WO2014089437A1 WO 2014089437 A1 WO2014089437 A1 WO 2014089437A1 US 2013073585 W US2013073585 W US 2013073585W WO 2014089437 A1 WO2014089437 A1 WO 2014089437A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
layer
arrangement
solution
graphene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2013/073585
Other languages
English (en)
French (fr)
Inventor
Bruce Ira WILLNER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Graphene Frontiers LLC
Original Assignee
Graphene Frontiers LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Graphene Frontiers LLC filed Critical Graphene Frontiers LLC
Priority to PL13860728T priority Critical patent/PL2928700T3/pl
Priority to ES13860728.8T priority patent/ES2691120T3/es
Priority to JP2015545871A priority patent/JP2016508891A/ja
Priority to KR1020157017901A priority patent/KR102203157B1/ko
Priority to CN201380072552.7A priority patent/CN104981357B/zh
Priority to EP13860728.8A priority patent/EP2928700B1/en
Publication of WO2014089437A1 publication Critical patent/WO2014089437A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/08—Impregnating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/10—Removing layers, or parts of layers, mechanically or chemically
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • B32B2037/243—Coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • B32B2037/246—Vapour deposition

Definitions

  • Figure 2 is a schematic illustration of methods performed according to further aspects of the present invention.
  • At least one layer of material 12 can be formed on at least part of a surface of a first substrate 10 thereby forming an interface 16 between a first surface 14 of the at least one layer of material 12 and the substrate 10.
  • the at least one layer material can be formed on part of a surface of the first substrate, for example, as a periodic pattern. Alternatively, the at least one layer of material 12 can cover the entire surface of the first substrate 10.
  • the layer of material 12 can be formed as a single layer of material, or as multiple layers of material.
  • the layer of material 12 can have any suitable thickness. The methods and arrangements of the present invention are advantageous with respect to thin layers, such as layers having a total thickness less than 10 nm.
  • the electrical bias on the graphene which is part of one of the electrodes in the electrolysis cell, can be used to draw dopants to the graphene surface, where it bonds or is adsorbed.
  • first substrate 10 can be provided, optionally, in the form of a supply roll 8.
  • At least one layer of material 12 is formed on at least part of a surface of the first substrate 10.
  • the at least one layer of material 12 can be formed by any suitable technique, as previously described herein.
  • the at least one layer of material 12 can comprise graphene can be deposited by a chemical vapor deposition technique. The specifics of this technique have been previously described above in connection with other embodiments and are incorporated herein by reference.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Laminated Bodies (AREA)
PCT/US2013/073585 2012-12-07 2013-12-06 Method and apparatus for transfer of films among substrates Ceased WO2014089437A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
PL13860728T PL2928700T3 (pl) 2012-12-07 2013-12-06 Sposób i aparatura do przenoszenia powłok z jednego substratu na inny
ES13860728.8T ES2691120T3 (es) 2012-12-07 2013-12-06 Método y aparatos para la transferencia de películas entre sustratos
JP2015545871A JP2016508891A (ja) 2012-12-07 2013-12-06 基板間のフィルムの転写のための方法および装置
KR1020157017901A KR102203157B1 (ko) 2012-12-07 2013-12-06 기판들 간의 필름들의 전사를 위한 방법 및 장치
CN201380072552.7A CN104981357B (zh) 2012-12-07 2013-12-06 用于在衬底之间转移膜的方法和装置
EP13860728.8A EP2928700B1 (en) 2012-12-07 2013-12-06 Method and apparatus for transfer of films among substrates

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261797471P 2012-12-07 2012-12-07
US61/797,471 2012-12-07

Publications (1)

Publication Number Publication Date
WO2014089437A1 true WO2014089437A1 (en) 2014-06-12

Family

ID=50881366

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2013/073585 Ceased WO2014089437A1 (en) 2012-12-07 2013-12-06 Method and apparatus for transfer of films among substrates

Country Status (8)

Country Link
US (3) US8822308B2 (enExample)
EP (1) EP2928700B1 (enExample)
JP (1) JP2016508891A (enExample)
KR (1) KR102203157B1 (enExample)
CN (1) CN104981357B (enExample)
ES (1) ES2691120T3 (enExample)
PL (1) PL2928700T3 (enExample)
WO (1) WO2014089437A1 (enExample)

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CN104495823A (zh) * 2014-12-16 2015-04-08 中国科学院重庆绿色智能技术研究院 一种单层连续石墨烯薄膜卷材的制备方法及装置
US12459818B2 (en) 2022-06-13 2025-11-04 The University Of Tokyo Method for manipulating flake-like material and method for producing article containing flake-like material

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CN102719877B (zh) * 2011-06-09 2014-09-03 中国科学院金属研究所 一种低成本无损转移石墨烯的方法
KR101878739B1 (ko) * 2011-10-24 2018-07-17 삼성전자주식회사 그래핀 전사부재, 그래핀 전사방법 및 이를 이용한 그래핀 소자 제조방법
CN103208425B (zh) * 2013-03-22 2015-08-26 中国科学院上海微系统与信息技术研究所 一种石墨烯调制的高K金属栅Ge基MOS器件的制作方法
US9064698B1 (en) * 2014-03-30 2015-06-23 International Business Machines Corporation Thin-film gallium nitride structures grown on graphene
KR102391844B1 (ko) * 2014-06-20 2022-04-29 더 리전트 오브 더 유니버시티 오브 캘리포니아 그래핀의 제조 및 전사 방법
CN104129783B (zh) * 2014-08-04 2017-02-15 中国科学院金属研究所 一种低成本、洁净无损转移大面积石墨烯的方法
CN104495824B (zh) * 2014-12-16 2016-08-24 中国科学院重庆绿色智能技术研究院 一种单层连续石墨烯薄膜生产的方法和装置
US10272647B2 (en) * 2014-12-19 2019-04-30 Corning Incorporated Graphene and polymer-free method for transferring CVD grown graphene onto hydrophobic substrates
CN104538562B (zh) * 2015-01-15 2017-04-26 京东方科技集团股份有限公司 一种oled器件及其封装方法和封装装置
KR101870643B1 (ko) * 2016-01-28 2018-06-25 주식회사 참트론 그래핀의 전사방법
CN105862147B (zh) * 2016-06-14 2018-03-23 扬州纳佰成纳米科技有限公司 一种静电纺丝分立辊式纳米纤维膜连续接收方法及其装置
US10759157B2 (en) * 2016-06-15 2020-09-01 Nanomedical Diagnostics, Inc. Systems and methods for transferring graphene
US11056343B2 (en) 2016-06-15 2021-07-06 Cardea Bio, Inc. Providing a temporary protective layer on a graphene sheet
US10903319B2 (en) 2016-06-15 2021-01-26 Nanomedical Diagnostics, Inc. Patterning graphene with a hard mask coating
US10369775B2 (en) * 2016-12-09 2019-08-06 Imec Vzw Method of releasing graphene from substrate
CN110065939B (zh) * 2018-01-23 2022-09-23 中国科学院上海微系统与信息技术研究所 具有石墨烯气泡的石墨烯结构及其制备方法
TWI740521B (zh) * 2019-05-29 2021-09-21 普渡研究基金會 脫層方法及藉以製造薄膜裝置之方法
CN113078054B (zh) * 2021-03-25 2024-06-18 中国科学院上海微系统与信息技术研究所 一种电极层的制备方法及半导体结构
NL2033775B1 (en) 2022-12-21 2024-06-27 Applied Nanolayers B V Method and apparatus for transferring one or more layers of a material from an initial substrate to a target substrate

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US5373339A (en) * 1993-12-22 1994-12-13 Eastman Kodak Company Apparatus and method for separating spliced strips of photographic film
WO2011159922A2 (en) * 2010-06-16 2011-12-22 The Research Foundation Of State University Of New York Graphene films and methods of making thereof
US20120031551A1 (en) * 2010-08-05 2012-02-09 Hon Hai Precision Industry Co., Ltd. Method for transfer printing nanowires
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CN102719877A (zh) * 2011-06-09 2012-10-10 中国科学院金属研究所 一种低成本无损转移石墨烯的方法

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US12459818B2 (en) 2022-06-13 2025-11-04 The University Of Tokyo Method for manipulating flake-like material and method for producing article containing flake-like material

Also Published As

Publication number Publication date
ES2691120T3 (es) 2018-11-23
EP2928700A1 (en) 2015-10-14
KR20150094668A (ko) 2015-08-19
EP2928700A4 (en) 2016-06-22
US9427946B2 (en) 2016-08-30
US20140162433A1 (en) 2014-06-12
CN104981357A (zh) 2015-10-14
US8822308B2 (en) 2014-09-02
EP2928700B1 (en) 2018-09-12
JP2016508891A (ja) 2016-03-24
KR102203157B1 (ko) 2021-01-13
US20140332141A1 (en) 2014-11-13
CN104981357B (zh) 2017-04-12
PL2928700T3 (pl) 2019-02-28
US20170080696A1 (en) 2017-03-23

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