PL2928700T3 - Sposób i aparatura do przenoszenia powłok z jednego substratu na inny - Google Patents

Sposób i aparatura do przenoszenia powłok z jednego substratu na inny

Info

Publication number
PL2928700T3
PL2928700T3 PL13860728T PL13860728T PL2928700T3 PL 2928700 T3 PL2928700 T3 PL 2928700T3 PL 13860728 T PL13860728 T PL 13860728T PL 13860728 T PL13860728 T PL 13860728T PL 2928700 T3 PL2928700 T3 PL 2928700T3
Authority
PL
Poland
Prior art keywords
films
substrates
transfer
Prior art date
Application number
PL13860728T
Other languages
English (en)
Inventor
Bruce Ira Willner
Original Assignee
Aixtron Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron Se filed Critical Aixtron Se
Publication of PL2928700T3 publication Critical patent/PL2928700T3/pl

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/08—Impregnating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/10—Removing layers, or parts of layers, mechanically or chemically
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • B32B2037/243—Coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • B32B2037/246—Vapour deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Laminated Bodies (AREA)
PL13860728T 2012-12-07 2013-12-06 Sposób i aparatura do przenoszenia powłok z jednego substratu na inny PL2928700T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261797471P 2012-12-07 2012-12-07
PCT/US2013/073585 WO2014089437A1 (en) 2012-12-07 2013-12-06 Method and apparatus for transfer of films among substrates
EP13860728.8A EP2928700B1 (en) 2012-12-07 2013-12-06 Method and apparatus for transfer of films among substrates

Publications (1)

Publication Number Publication Date
PL2928700T3 true PL2928700T3 (pl) 2019-02-28

Family

ID=50881366

Family Applications (1)

Application Number Title Priority Date Filing Date
PL13860728T PL2928700T3 (pl) 2012-12-07 2013-12-06 Sposób i aparatura do przenoszenia powłok z jednego substratu na inny

Country Status (8)

Country Link
US (3) US8822308B2 (pl)
EP (1) EP2928700B1 (pl)
JP (1) JP2016508891A (pl)
KR (1) KR102203157B1 (pl)
CN (1) CN104981357B (pl)
ES (1) ES2691120T3 (pl)
PL (1) PL2928700T3 (pl)
WO (1) WO2014089437A1 (pl)

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CN102719877B (zh) * 2011-06-09 2014-09-03 中国科学院金属研究所 一种低成本无损转移石墨烯的方法
KR101878739B1 (ko) * 2011-10-24 2018-07-17 삼성전자주식회사 그래핀 전사부재, 그래핀 전사방법 및 이를 이용한 그래핀 소자 제조방법
CN103208425B (zh) * 2013-03-22 2015-08-26 中国科学院上海微系统与信息技术研究所 一种石墨烯调制的高K金属栅Ge基MOS器件的制作方法
US9064698B1 (en) * 2014-03-30 2015-06-23 International Business Machines Corporation Thin-film gallium nitride structures grown on graphene
EP3157867B1 (en) * 2014-06-20 2022-02-16 The Regents of the University of California Method for the fabrication and transfer of graphene
CN104129783B (zh) * 2014-08-04 2017-02-15 中国科学院金属研究所 一种低成本、洁净无损转移大面积石墨烯的方法
CN104495824B (zh) * 2014-12-16 2016-08-24 中国科学院重庆绿色智能技术研究院 一种单层连续石墨烯薄膜生产的方法和装置
CN104495823B (zh) * 2014-12-16 2016-08-17 中国科学院重庆绿色智能技术研究院 一种单层连续石墨烯薄膜卷材的制备方法及装置
US10272647B2 (en) * 2014-12-19 2019-04-30 Corning Incorporated Graphene and polymer-free method for transferring CVD grown graphene onto hydrophobic substrates
CN104538562B (zh) * 2015-01-15 2017-04-26 京东方科技集团股份有限公司 一种oled器件及其封装方法和封装装置
KR101870643B1 (ko) * 2016-01-28 2018-06-25 주식회사 참트론 그래핀의 전사방법
CN105862147B (zh) * 2016-06-14 2018-03-23 扬州纳佰成纳米科技有限公司 一种静电纺丝分立辊式纳米纤维膜连续接收方法及其装置
US10759157B2 (en) * 2016-06-15 2020-09-01 Nanomedical Diagnostics, Inc. Systems and methods for transferring graphene
US11056343B2 (en) 2016-06-15 2021-07-06 Cardea Bio, Inc. Providing a temporary protective layer on a graphene sheet
US10903319B2 (en) 2016-06-15 2021-01-26 Nanomedical Diagnostics, Inc. Patterning graphene with a hard mask coating
US10369775B2 (en) * 2016-12-09 2019-08-06 Imec Vzw Method of releasing graphene from substrate
CN110065939B (zh) * 2018-01-23 2022-09-23 中国科学院上海微系统与信息技术研究所 具有石墨烯气泡的石墨烯结构及其制备方法
US20220223457A1 (en) * 2019-05-29 2022-07-14 Purdue Research Foundation Delamination processes and fabrication of thin film devices thereby
CN113078054B (zh) * 2021-03-25 2024-06-18 中国科学院上海微系统与信息技术研究所 一种电极层的制备方法及半导体结构

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US5373339A (en) 1993-12-22 1994-12-13 Eastman Kodak Company Apparatus and method for separating spliced strips of photographic film
JP4509488B2 (ja) * 2003-04-02 2010-07-21 株式会社Ｓｕｍｃｏ 貼り合わせ基板の製造方法
US20060188721A1 (en) * 2005-02-22 2006-08-24 Eastman Kodak Company Adhesive transfer method of carbon nanotube layer
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KR101842018B1 (ko) * 2011-04-01 2018-03-26 한화테크윈 주식회사 그래핀을 포함하는 필름 제조 방법
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CN102719877B (zh) * 2011-06-09 2014-09-03 中国科学院金属研究所 一种低成本无损转移石墨烯的方法
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Also Published As

Publication number Publication date
US20170080696A1 (en) 2017-03-23
EP2928700A4 (en) 2016-06-22
EP2928700B1 (en) 2018-09-12
US9427946B2 (en) 2016-08-30
JP2016508891A (ja) 2016-03-24
US8822308B2 (en) 2014-09-02
EP2928700A1 (en) 2015-10-14
CN104981357A (zh) 2015-10-14
US20140162433A1 (en) 2014-06-12
CN104981357B (zh) 2017-04-12
US20140332141A1 (en) 2014-11-13
ES2691120T3 (es) 2018-11-23
KR102203157B1 (ko) 2021-01-13
KR20150094668A (ko) 2015-08-19
WO2014089437A1 (en) 2014-06-12

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