CN104981357B - 用于在衬底之间转移膜的方法和装置 - Google Patents
用于在衬底之间转移膜的方法和装置 Download PDFInfo
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- CN104981357B CN104981357B CN201380072552.7A CN201380072552A CN104981357B CN 104981357 B CN104981357 B CN 104981357B CN 201380072552 A CN201380072552 A CN 201380072552A CN 104981357 B CN104981357 B CN 104981357B
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/08—Impregnating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/10—Removing layers, or parts of layers, mechanically or chemically
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/194—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
- B32B2037/243—Coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
- B32B2037/246—Vapour deposition
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261797471P | 2012-12-07 | 2012-12-07 | |
| US61/797,471 | 2012-12-07 | ||
| PCT/US2013/073585 WO2014089437A1 (en) | 2012-12-07 | 2013-12-06 | Method and apparatus for transfer of films among substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104981357A CN104981357A (zh) | 2015-10-14 |
| CN104981357B true CN104981357B (zh) | 2017-04-12 |
Family
ID=50881366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380072552.7A Active CN104981357B (zh) | 2012-12-07 | 2013-12-06 | 用于在衬底之间转移膜的方法和装置 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US8822308B2 (enExample) |
| EP (1) | EP2928700B1 (enExample) |
| JP (1) | JP2016508891A (enExample) |
| KR (1) | KR102203157B1 (enExample) |
| CN (1) | CN104981357B (enExample) |
| ES (1) | ES2691120T3 (enExample) |
| PL (1) | PL2928700T3 (enExample) |
| WO (1) | WO2014089437A1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102719877B (zh) * | 2011-06-09 | 2014-09-03 | 中国科学院金属研究所 | 一种低成本无损转移石墨烯的方法 |
| KR101878739B1 (ko) * | 2011-10-24 | 2018-07-17 | 삼성전자주식회사 | 그래핀 전사부재, 그래핀 전사방법 및 이를 이용한 그래핀 소자 제조방법 |
| CN103208425B (zh) * | 2013-03-22 | 2015-08-26 | 中国科学院上海微系统与信息技术研究所 | 一种石墨烯调制的高K金属栅Ge基MOS器件的制作方法 |
| US9064698B1 (en) * | 2014-03-30 | 2015-06-23 | International Business Machines Corporation | Thin-film gallium nitride structures grown on graphene |
| KR102391844B1 (ko) * | 2014-06-20 | 2022-04-29 | 더 리전트 오브 더 유니버시티 오브 캘리포니아 | 그래핀의 제조 및 전사 방법 |
| CN104129783B (zh) * | 2014-08-04 | 2017-02-15 | 中国科学院金属研究所 | 一种低成本、洁净无损转移大面积石墨烯的方法 |
| CN104495824B (zh) * | 2014-12-16 | 2016-08-24 | 中国科学院重庆绿色智能技术研究院 | 一种单层连续石墨烯薄膜生产的方法和装置 |
| CN104495823B (zh) * | 2014-12-16 | 2016-08-17 | 中国科学院重庆绿色智能技术研究院 | 一种单层连续石墨烯薄膜卷材的制备方法及装置 |
| US10272647B2 (en) * | 2014-12-19 | 2019-04-30 | Corning Incorporated | Graphene and polymer-free method for transferring CVD grown graphene onto hydrophobic substrates |
| CN104538562B (zh) * | 2015-01-15 | 2017-04-26 | 京东方科技集团股份有限公司 | 一种oled器件及其封装方法和封装装置 |
| KR101870643B1 (ko) * | 2016-01-28 | 2018-06-25 | 주식회사 참트론 | 그래핀의 전사방법 |
| CN105862147B (zh) * | 2016-06-14 | 2018-03-23 | 扬州纳佰成纳米科技有限公司 | 一种静电纺丝分立辊式纳米纤维膜连续接收方法及其装置 |
| US10759157B2 (en) * | 2016-06-15 | 2020-09-01 | Nanomedical Diagnostics, Inc. | Systems and methods for transferring graphene |
| US11056343B2 (en) | 2016-06-15 | 2021-07-06 | Cardea Bio, Inc. | Providing a temporary protective layer on a graphene sheet |
| US10903319B2 (en) | 2016-06-15 | 2021-01-26 | Nanomedical Diagnostics, Inc. | Patterning graphene with a hard mask coating |
| US10369775B2 (en) * | 2016-12-09 | 2019-08-06 | Imec Vzw | Method of releasing graphene from substrate |
| CN110065939B (zh) * | 2018-01-23 | 2022-09-23 | 中国科学院上海微系统与信息技术研究所 | 具有石墨烯气泡的石墨烯结构及其制备方法 |
| TWI740521B (zh) * | 2019-05-29 | 2021-09-21 | 普渡研究基金會 | 脫層方法及藉以製造薄膜裝置之方法 |
| CN113078054B (zh) * | 2021-03-25 | 2024-06-18 | 中国科学院上海微系统与信息技术研究所 | 一种电极层的制备方法及半导体结构 |
| JP2023181669A (ja) | 2022-06-13 | 2023-12-25 | 国立大学法人 東京大学 | フレーク状物質の操作方法、及びフレーク状物質を用いた物品の生産方法 |
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| US5373339A (en) * | 1993-12-22 | 1994-12-13 | Eastman Kodak Company | Apparatus and method for separating spliced strips of photographic film |
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| US20060188721A1 (en) * | 2005-02-22 | 2006-08-24 | Eastman Kodak Company | Adhesive transfer method of carbon nanotube layer |
| FR2888400B1 (fr) * | 2005-07-08 | 2007-10-19 | Soitec Silicon On Insulator | Procede de prelevement de couche |
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| US20100092809A1 (en) * | 2008-10-10 | 2010-04-15 | Board Of Trustees Of Michigan State University | Electrically conductive, optically transparent films of exfoliated graphite nanoparticles and methods of making the same |
| WO2010065346A1 (en) * | 2008-11-25 | 2010-06-10 | The University Of Alabama | Exfoliation of graphite using ionic liquids |
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| US8753468B2 (en) * | 2009-08-27 | 2014-06-17 | The United States Of America, As Represented By The Secretary Of The Navy | Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates |
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| KR101603766B1 (ko) * | 2009-11-13 | 2016-03-15 | 삼성전자주식회사 | 그라펜 적층체 및 그의 제조방법 |
| WO2011062213A1 (ja) * | 2009-11-19 | 2011-05-26 | 株式会社ニコン | リーダ部材、基板、基板カートリッジ、基板処理装置、リーダ接続方法、表示素子の製造方法及び表示素子の製造装置 |
| WO2011081440A2 (ko) * | 2009-12-30 | 2011-07-07 | 성균관대학교산학협력단 | 그래핀 필름의 롤투롤 도핑 방법 및 도핑된 그래핀 필름 |
| WO2011087301A2 (ko) * | 2010-01-15 | 2011-07-21 | 성균관대학교산학협력단 | 기체 및 수분 차단용 그래핀 보호막, 이의 형성 방법 및 그의 용도 |
| WO2011159922A2 (en) * | 2010-06-16 | 2011-12-22 | The Research Foundation Of State University Of New York | Graphene films and methods of making thereof |
| KR101648563B1 (ko) * | 2010-06-29 | 2016-08-16 | 한화테크윈 주식회사 | 그래핀 전사필름 제조방법 및 그래핀 전사필름 제조장치 |
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| KR101842018B1 (ko) * | 2011-04-01 | 2018-03-26 | 한화테크윈 주식회사 | 그래핀을 포함하는 필름 제조 방법 |
| JP2012224485A (ja) * | 2011-04-15 | 2012-11-15 | National Institute Of Advanced Industrial Science & Technology | 透明導電性炭素膜の転写方法 |
| CN102719877B (zh) * | 2011-06-09 | 2014-09-03 | 中国科学院金属研究所 | 一种低成本无损转移石墨烯的方法 |
| US8940104B2 (en) * | 2011-08-02 | 2015-01-27 | Brewer Science Inc. | Cleaning composition for temporary wafer bonding materials |
| WO2013043120A1 (en) * | 2011-09-21 | 2013-03-28 | National University Of Singapore | Methods of nondestructively delaminating graphene from a metal substrate |
| CN103374751B (zh) * | 2012-04-25 | 2016-06-15 | 清华大学 | 具有微构造的外延结构体的制备方法 |
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2013
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- 2013-12-06 EP EP13860728.8A patent/EP2928700B1/en active Active
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- 2013-12-06 PL PL13860728T patent/PL2928700T3/pl unknown
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| EP2928700A1 (en) | 2015-10-14 |
| KR20150094668A (ko) | 2015-08-19 |
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| US9427946B2 (en) | 2016-08-30 |
| US20140162433A1 (en) | 2014-06-12 |
| CN104981357A (zh) | 2015-10-14 |
| US8822308B2 (en) | 2014-09-02 |
| EP2928700B1 (en) | 2018-09-12 |
| WO2014089437A1 (en) | 2014-06-12 |
| JP2016508891A (ja) | 2016-03-24 |
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| US20140332141A1 (en) | 2014-11-13 |
| PL2928700T3 (pl) | 2019-02-28 |
| US20170080696A1 (en) | 2017-03-23 |
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