WO2014086923A2 - Organisches optoelektronisches bauelement mit infrarot-detektor - Google Patents
Organisches optoelektronisches bauelement mit infrarot-detektor Download PDFInfo
- Publication number
- WO2014086923A2 WO2014086923A2 PCT/EP2013/075655 EP2013075655W WO2014086923A2 WO 2014086923 A2 WO2014086923 A2 WO 2014086923A2 EP 2013075655 W EP2013075655 W EP 2013075655W WO 2014086923 A2 WO2014086923 A2 WO 2014086923A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- organic
- detecting element
- light
- emitting element
- radiation detecting
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 65
- 230000005855 radiation Effects 0.000 claims abstract description 109
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 239000007787 solid Substances 0.000 claims description 5
- 238000000862 absorption spectrum Methods 0.000 claims description 2
- 238000000295 emission spectrum Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000149 argon plasma sintering Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/60—Circuit arrangements for operating LEDs comprising organic material, e.g. for operating organic light-emitting diodes [OLED] or polymer light-emitting diodes [PLED]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K65/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- An organic optoelectronic component is specified.
- An object to be solved is to provide an organic optoelectronic component, which is constructed particularly compact.
- the device comprises a substrate.
- the substrate is the supporting element of the component, on which further components of the component are arranged.
- the substrate is designed as a rigid body or as a film, which can also be flexible.
- the substrate comprises two opposite ones
- the substrate may be formed, for example cuboid.
- the substrate is for example with a
- the substrate for visible light and
- Infrared radiation is clear and transparent or milky and translucent.
- the substrate is permeable at least for infrared radiation in the near infrared. Overall, the substrate is then at least in Spectral range of near infrared and visible light permeable to radiation. "Radiation permeable" or
- Translucent means here and below that the radiation-transmissive component at least 50% of the electromagnetic radiation from the near infrared range and the range of visible light transmitted through it
- the substrate can, for example, with a
- radiopaque for example reflective
- the substrate may then be formed of a metal or a ceramic material.
- Spectral range of near infrared and / or visible light are reflected by the reflective element.
- the device comprises an organic light-emitting element.
- the organic light-emitting element forms, for example, a
- OLED organic light emitting diode
- the light-emitting element comprises at least one organic light-emitting layer which is arranged between two electrodes, for example an anode and a cathode.
- the electrodes of the organic light-emitting element can be radiation-transmissive or
- both electrodes are radiation-transmissive are formed or that an electrode
- optoelectronic component comprises the organic
- the organic radiation detecting element may be, for example, an organic photodiode or an organic phototransistor.
- the organic radiation detecting element comprises at least one organic radiation detecting layer which may be arranged between two electrodes. It is particularly possible that the organic
- the organic radiation detecting element is not configured to detect visible light, but has a
- Sensitivity in the spectral range at least the
- the organic radiation detecting element is arranged for detecting infrared radiation from the near infrared. According to at least one embodiment of the organic
- Optoelectronic device are the organic
- Main surface of the substrate are arranged side by side.
- the two elements stacked on the substrate are stacked.
- the two elements on each other opposite major surfaces of the substrate are arranged.
- the two elements can in particular be manufactured using the same production techniques, for example by vapor deposition on the substrate.
- the device comprises a substrate which is radiation-transmissive, an organic light-emitting element having an organic light-emitting layer between two electrodes, and an organic radiation detecting element having an organic radiation detecting layer.
- both the organic light-emitting element and the organic radiation detecting element are arranged on the substrate.
- the emission spectrum of the organic light-emitting element differs from the absorption spectrum of the organic radiation
- the organic light-emitting element is configured to emit visible light during operation and to detect the organic radiation
- Element is designed to detect infrared radiation during operation.
- Component are, inter alia, the following
- opto-electronic devices where it is desired that the opto-electronic devices generate light only when a person is in their vicinity.
- motion detectors or presence detectors necessary to control the optoelectronic devices.
- the optoelectronic components and the motion or presence detectors are formed by separate components. For reasons of space, only a few motion detectors or presence detectors are often arranged in a room, so that often areas of a room need to be illuminated in which there is no one at all.
- Component is now based on the idea to integrate the sensor for a motion detector or a presence detector in the device and thus a particularly compact
- Specify optoelectronic component by means of which, for example, areas of a room can be specifically illuminated, in which people are.
- Optoelectronic device is particularly compact in this way and helps to save power since only
- the optoelectronic component is particularly easy to produce, since for the production of radiation
- Manufacturing methods such as vapor deposition techniques for arranging the elements on the substrate can be used.
- vapor deposition techniques for arranging the elements on the substrate
- Light emitting diode that is, the radiation-emitting element
- the radiation detecting element forms a photodiode or a phototransistor which is sensitive in the infrared range is. Control of the light-emitting element may be detected in response to signals of the radiation
- the optoelectronic organic component described here enables a higher degree of integration for luminaires and lighting systems with motion or presence detectors.
- Optoelectronic organic component provides the
- Optoelectronic device are the organic
- the two elements are arranged, for example, adjacent to each other on the same main surface of the substrate while being spaced from each other in a lateral direction.
- the lateral directions are those directions which are parallel to the main directions of extension and the
- light emitting elements and the organic radiation detecting element may be arranged side by side on the same main surface of the substrate.
- the organic radiation detecting element may be arranged side by side on the same main surface of the substrate.
- Optoelectronic component is in the region of the organic radiation detecting element facing away from the major surface of the organic radiation detecting element
- Substrate formed a structured region which acts as a converging lens for the infrared radiation to be detected by the organic radiation element, wherein due to the structured region of infrared radiation from a larger solid angle range on the organic radiation detecting element encounters, than without
- Area can be formed in the material of the substrate. That is, the material with which the substrate is formed, for example, may be structured to a converging lens on the main surface facing away from the detecting element.
- an element which forms the structured region is arranged on the main surface of the substrate facing away from the detecting element.
- a condenser lens may be glued to this main surface of the substrate. In any case, increases due to the structured area of the solid angle range, from the
- Infrared radiation is detected, which is detected by the detecting element.
- the detecting element Infrared radiation is detected, which is detected by the detecting element.
- Infrared radiation to be monitored.
- Optoelectronic device are the organic
- the two elements are not directly on the same major surface of the substrate
- the light-emitting element can be arranged above the radiation-detecting element, so that the radiation-detecting element between the light-emitting element and the
- Substrate is arranged. In this case, it is possible that in operation by the organic light-emitting element
- Radiation detecting element is in this case
- An electrode disposed between the light emitting element and the radiation detecting element is also
- Optoelectronic component is on the main surface of the organic light emitting element facing away from the
- the light-scattering area formed.
- Area can be formed, for example, by structuring, for example roughening, of the substrate on at least one of the main surface. Furthermore, it is possible that the Light scattering region is formed by an additional element, such as a scattering layer or a scattering film, which is attached to at least one of the main surface of the substrate.
- Optoelectronic device are the organic
- the organic radiation detecting element upon receipt of infrared radiation by the organic radiation detecting element takes place. If the radiation-detecting element is, for example, a photodiode, then it is in the
- This structure has the advantage that it is particularly easy to implement.
- a disadvantage may be that weak infrared signals may not be sufficient to result in an energization of the light-emitting element.
- Optoelectronic device are the organic
- the contact layer is, for example, each with one electrode of the organic light-emitting
- the contact layer may be formed by a metal layer, for example, on the the same main surface of the substrate is deposited, on which the two elements are arranged.
- the device comprises a drive device, which with the organic
- the drive device is adapted to the organic light-emitting element depending on the organic radiation detecting element derived
- the driving device can be used to filter and / or amplify signals originating from the radiation-detecting element in order to set the sensitivity with which the light-emitting element is controlled in dependence on the signals of the radiation-detecting element.
- Optoelectronic component forms the drive device together with the organic radiation detecting element from a motion or a presence detector. That is, with the help of the drive device is the
- the electrical switch for the light-emitting element of the device operates. With the help of the drive device, it is then possible that, for example, by the movement of a person in the room, the light-emitting element can be energized to generate light.
- the organic optoelectronic component are the organic
- the driving device is directly connected to the organic radiation detecting element
- the drive device is adapted to the organic radiation
- the drive device is configured to control a current source, and the current source is directly electrically conductive with the organic light-emitting element
- the drive device can be on the substrate
- the drive device is part of a driver for the organic optoelectronic
- Component is, which also includes the power source for operating the light-emitting element in addition to the drive device.
- the signals of the radiation detecting element can be amplified by the drive device, without directly the operation of the
- a luminaire which comprises at least one organic optoelectronic component according to one of the previous claims. That is, all the features disclosed for the organic optoelectronic device are also disclosed for the luminaire.
- the at least one optoelectronic component forms a light source of the luminaire.
- two or more of the optoelectronic components described here can be arranged in a common luminaire housing of the luminaire.
- the light can, for example, for
- General lighting for lighting corridors or outdoor lighting use, wherein the radiation detecting element of the components together with a drive device can form a motion or a presence detector.
- FIGS 1A, 1B, 2A, 2B show schematically
- FIG. 1A shows a first exemplary embodiment of one described here
- Embodiment of Figure 1A are an organic
- the substrate 1 is formed with a material which is permeable to light and infrared radiation.
- the substrate 1 is made of glass.
- the light emitting element 2 and the radiation detecting element 3 are coplanarly deposited on the first main surface 1A of the substrate, for example, by a vapor deposition process.
- the light-emitting element 2 comprises a first electrode 21, which is, for example, a transparent anode, at least one light-generating organic layer 22 and a second electrode 23, which is, for example, a cathode which may be radiation-reflecting or radiation-transparent ,
- the radiation detecting element 3 likewise comprises a first electrode 31, at least one organic radiation-receiving layer 32 and a second electrode 33.
- Both elements 2, 3 are with a thin-film encapsulation, for example by means of a PE-CVD method (Plasma Enhanced Chemical Vapor Deposition) and / or an atomic layer deposition (ALD) method such as flash ALD, photoinduced ALD and / or physical vapor deposition may be encapsulated. It is possible that the PE-CVD method (Plasma Enhanced Chemical Vapor Deposition) and / or an atomic layer deposition (ALD) method such as flash ALD, photoinduced ALD and / or physical vapor deposition may be encapsulated. It is possible that the PE-CVD method (Plasma Enhanced Chemical Vapor Deposition) and / or an atomic layer deposition (ALD) method such as flash ALD, photoinduced ALD and / or physical vapor deposition may be encapsulated. It is possible that the PE-CVD method (Plasma Enhanced Chemical Vapor Deposition) and / or an atomic layer deposition (ALD
- Encapsulation layer sequence 4 includes both elements 2, 3 and both elements are encapsulated with the encapsulation layer sequence 4 in a single manufacturing process.
- a cover 6 may be arranged, which by means of a connecting means 5 on the
- Encapsulation layer sequence 4 is attached.
- the connecting means 5 is a
- cover body 6 extends as a single cover body of the device over both elements.
- the light-emitting element 2 During operation of the optoelectronic component, the light-emitting element 2 generates light 12 that is in
- Main emission R is emitted.
- the light emission takes place through the substrate 1.
- the main surface 1a facing away from the second main surface 1b can optionally have a light-scattering region 11, for example in the form of a scattering film, a scattering layer, a roughening of the substrate on the surface and / or in the form of
- Infrared radiation 13 from outside the device penetrates through the substrate 1 to the radiation detecting element 3 and is converted there into signals.
- Contact layer 7 which may be formed as a contact metallization on the first major surface la forwarded.
- an insulating layer 24 may be arranged between the contact layer 7 and one of the electrodes.
- the second main surface lb facing away from the first main surface la may comprise a structured region 14 in which the substrate is used as a converging lens for
- Infrared radiation 13 is formed or where an optical element which acts as a converging lens for infrared radiation, is attached to the substrate 1.
- the structured region 14 ensures that infrared radiation from a larger
- FIG. 1B shows a schematic plan view of the first main surface 1a.
- the two elements 2 a, 2 b may be formed, for example, by the
- Contact layer 7 are electrically connected in series with each other.
- FIGS. 3A and 3B Possible circuit diagrams for this purpose are shown in FIGS. 3A and 3B.
- FIG. 3A relates to FIG.
- Light-emitting element 2 is connected in series with the radiation-detecting element 3, wherein the radiation-detecting element 3 is connected in the reverse direction. Upon receipt of infrared radiation 13, the detecting
- Element 3 is turned on and the light-emitting element 2 can be energized for generating radiation.
- the radiation-detecting element 3 is not formed by a photodiode but by an infrared phototransistor.
- the two elements 2, 3 share the electrode 21, 33, which is permeable to the light 12 generated in the light-emitting element 2. Also, the radiation detecting element 3 is formed permeable to this light 12.
- the embodiment of FIG. 2A has the advantage that the infrared radiation 13 can be detected over the entire emission area of the optoelectronic component. In this way, infrared radiation can be absorbed from a particularly large solid angle range.
- FIG. 2B a schematic plan view of the first main surface 1a of the substrate 1 of the component of FIG. 2A is shown.
- FIG. 3C a further schematic circuit diagram for interconnecting elements 2, 3 of FIG. 3C
- the radiation detecting element 2 is directly electrically conductive with a
- the radiation detecting element 3 may be an infrared phototransistor or an infrared photodiode
- the component 100 may comprise the driver 91, that is to say the components of the
- Driver 91 may be arranged on the substrate 1 and, for example, also be formed with organic components. In this case, it is possible that all
- Components ie the elements 2, 3, the power source 9 and the drive device 8, are encapsulated together.
- the driver 91 is arranged separately from the component 100 and is not part of the component 100.
- FIGS. 4A to 4C the use of a luminaire described here, which comprises at least one component 100 described here as a light source, is described in more detail.
- Component 100 forms in this luminaire together with a drive device from a motion detector, the
- Component activated accordingly.
- a person who moves in a room or a corridor a light tracked. It is possible that the brightness of the light of an already active lamp for a certain time is increased or the lamp is turned on for certain times. Thus, an energy-efficient illumination is achieved because is illuminated only in places where lighting is needed. Due to the integration of the radiation detecting element 3 in the same device as the
- Light-emitting element 2 is a particularly compact
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112013005854.5T DE112013005854A5 (de) | 2012-12-06 | 2013-12-05 | Organisches optoelektronisches Bauelement mit Infrarot-Detektor |
CN201380064016.2A CN104956497B (zh) | 2012-12-06 | 2013-12-05 | 具有红外检测器的有机光电子器件 |
JP2015546011A JP2016514341A (ja) | 2012-12-06 | 2013-12-05 | 赤外線検出器を備えた有機オプトエレクトロニクスデバイス |
US14/650,248 US20150318430A1 (en) | 2012-12-06 | 2013-12-05 | Organic Optoelectronic Component with Infrared Detector |
KR1020157017662A KR20150093738A (ko) | 2012-12-06 | 2013-12-05 | 적외선 검출기를 구비하는 유기 광전자 컴포넌트 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012222463.7 | 2012-12-06 | ||
DE102012222463.7A DE102012222463A1 (de) | 2012-12-06 | 2012-12-06 | Organisches optoelektronisches Bauelement mit Infrarot-Detektor |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2014086923A2 true WO2014086923A2 (de) | 2014-06-12 |
WO2014086923A3 WO2014086923A3 (de) | 2014-08-28 |
Family
ID=49753143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2013/075655 WO2014086923A2 (de) | 2012-12-06 | 2013-12-05 | Organisches optoelektronisches bauelement mit infrarot-detektor |
Country Status (6)
Country | Link |
---|---|
US (1) | US20150318430A1 (de) |
JP (1) | JP2016514341A (de) |
KR (1) | KR20150093738A (de) |
CN (1) | CN104956497B (de) |
DE (2) | DE102012222463A1 (de) |
WO (1) | WO2014086923A2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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EP3316305A1 (de) * | 2016-10-27 | 2018-05-02 | Sensors Unlimited, Inc. | Analoge strahlungswellenlängenwandler |
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DE102014100680B4 (de) * | 2014-01-22 | 2019-10-31 | Osram Oled Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelementes |
CN105870150B (zh) | 2015-02-09 | 2020-09-25 | 三星显示有限公司 | 顶部发光装置和有机发光二极管显示装置 |
GB2549801B (en) | 2016-04-29 | 2018-08-29 | Design Led Products Ltd | Modular light panel |
US20190067402A1 (en) * | 2017-08-28 | 2019-02-28 | HKC Corporation Limited | Display panel and manufacturing method thereof and display device |
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- 2013-12-05 CN CN201380064016.2A patent/CN104956497B/zh active Active
- 2013-12-05 KR KR1020157017662A patent/KR20150093738A/ko not_active Application Discontinuation
- 2013-12-05 JP JP2015546011A patent/JP2016514341A/ja active Pending
- 2013-12-05 US US14/650,248 patent/US20150318430A1/en not_active Abandoned
- 2013-12-05 DE DE112013005854.5T patent/DE112013005854A5/de active Pending
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Also Published As
Publication number | Publication date |
---|---|
DE112013005854A5 (de) | 2015-08-20 |
US20150318430A1 (en) | 2015-11-05 |
CN104956497B (zh) | 2018-02-13 |
DE102012222463A1 (de) | 2014-06-12 |
CN104956497A (zh) | 2015-09-30 |
KR20150093738A (ko) | 2015-08-18 |
JP2016514341A (ja) | 2016-05-19 |
WO2014086923A3 (de) | 2014-08-28 |
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