WO2014084321A1

WO2014084321A1 - Copper foil with carrier, process for producing copper foil with carrier, printed wiring board, and printed circuit board

Info

Publication number: WO2014084321A1
Application number: PCT/JP2013/082081
Authority: WO
Inventors: 美里本多; 友太永浦
Original assignee: Jx日鉱日石金属株式会社
Priority date: 2012-11-28
Filing date: 2013-11-28
Publication date: 2014-06-05
Also published as: JP2014129554A; JP5247929B1; TW201435154A; TWI512151B

Abstract

A copper foil with a carrier is provided. Before a lamination step wherein the copper foil with a carrier is laminated onto a base material, the adhesion between the carrier and the ultra-thin copper layer in the copper foil with a carrier is high, while after the lamination step, the adhesiveness between the carrier and the ultra-thin copper layer therein lowers, so that the carrier and the ultra-thin copper layer can be easily separated at an interface therebetween. Further, the occurrence of pinholes on the copper-layer-side surface is well suppressed. In the copper foil with a carrier, an intermediate layer is formed by laminating both nickel and molybdenum or cobalt or a molybdenum-cobalt alloy in this order from the copper foil carrier side. In the intermediate layer, the deposit of nickel is 1000 to 40000μg/dm². In a case where the intermediate layer contains molybdenum, the deposit of molybdenum is 50 to 1000μg/dm², while in a case where the intermediate layer contains cobalt, the deposit of cobalt is 50 to 1000μg/dm². When STEM line analysis with a length of 50 to 1000 nm is conducted in a cross section composed of the copper foil carrier, the intermediate layer and the ultra-thin copper layer in an area which includes all of these three constituents in this order, the maximum nickel concentration is 50 to 95mass%, while molybdenum or cobalt is present on the ultra-thin-copper-layer side of the nickel layer, the maximum amount of molybdenum or cobalt being 1 to 50mass%.

Description

Copper foil with carrier, method for producing copper foil with carrier, printed wiring board and printed circuit board

The present invention relates to a copper foil with a carrier, a method for producing a copper foil with a carrier, a printed wiring board, and a printed circuit board. More specifically, the present invention relates to a copper foil with a carrier used as a material for a printed wiring board for fine patterns, a method for producing the copper foil with a carrier, a printed wiring board, and a printed circuit board.

Printed wiring boards have made great progress over the last half century, and today they are used in almost all electronic devices. In recent years, with the increasing demand for miniaturization and high performance of electronic devices, higher density mounting of components and higher frequency of signals have progressed, and conductor patterns have become finer (fine pitch) and printed circuit boards. There is a demand for high frequency response, and in particular, when an IC chip is mounted on a printed wiring board, a fine pitch of L / S = 20/20 or less is required.

First, a printed wiring board is manufactured as a copper clad laminate in which an insulating substrate mainly composed of a copper foil and a glass epoxy substrate, a BT resin, a polyimide film or the like is bonded. Bonding is performed by laminating an insulating substrate and a copper foil and applying heat and pressure (lamination method), or by applying a varnish that is a precursor of an insulating substrate material to a surface having a coating layer of copper foil, A heating / curing method (casting method) is used.

As the fine pitch is increased, the thickness of the copper foil used for the copper clad laminate is also 9 μm, further 5 μm or less. However, when the foil thickness is 9 μm or less, the handleability when forming a copper clad laminate by the above-described lamination method or casting method is extremely deteriorated. Therefore, a copper foil with a carrier has appeared, in which a thick metal foil is used as a carrier, and an ultrathin copper layer is formed on the metal foil via a release layer. A general method of using a copper foil with a carrier is to peel the carrier through a release layer after the surface of the ultrathin copper layer is bonded to an insulating substrate and thermocompression bonded.

As a technique related to a copper foil with a carrier, for example, in Patent Document 1, a diffusion prevention layer, a release layer, and an electrolytic copper plating are formed in this order on the surface of a carrier, and a Cr or Cr hydrated oxide layer is formed as a release layer. A method for maintaining good peelability after hot pressing by using a simple substance or an alloy of Ni, Co, Fe, Cr, Mo, Ta, Cu, Al, P as a diffusion preventing layer is disclosed.

Further, it is known that the release layer is formed of Cr, Ni, Co, Fe, Mo, Ti, W, P, alloys thereof, or hydrates thereof. Furthermore, Patent Documents 2 and 3 describe that it is effective to provide Ni, Fe, or an alloy layer thereof as a base for the release layer in order to stabilize the peelability in a high temperature use environment such as a hot press. ing.

JP 2006-022406 A JP 2010-006071 A JP 2007-007937 A

In copper foil with a carrier, it is necessary to avoid the peeling of the ultrathin copper layer from the carrier before the lamination process on the insulating substrate, while the ultrathin copper layer from the carrier is removed after the lamination process to the insulating substrate. Must be peelable. In addition, in the copper foil with a carrier, the presence of pinholes on the surface of the ultrathin copper layer is not preferable because it leads to poor performance of the printed wiring board.

These points have not been fully studied in the prior art, and there is still room for improvement. Therefore, an object of the present invention is to provide a copper foil with a carrier that can be peeled off after a lamination process on an insulating substrate, while the ultrathin copper layer does not peel off from the carrier before the lamination process on the insulating substrate. . Another object of the present invention is to provide a copper foil with a carrier in which the generation of pinholes on the surface of the ultrathin copper layer is suppressed.

In order to achieve the above object, the present inventor conducted extensive research and used copper foil as a carrier, formed an intermediate layer between the ultrathin copper layer and the carrier, and formed this intermediate layer on the copper foil carrier. It is extremely effective to be composed of nickel and molybdenum or cobalt or molybdenum-cobalt alloy in order, control the amount of nickel, molybdenum and cobalt deposited, and control the concentration of nickel, molybdenum and cobalt near the intermediate layer. I found out that

The present invention has been completed on the basis of the above knowledge, and in one aspect, a copper foil with a carrier having a copper foil carrier, an intermediate layer, and an ultrathin copper layer in this order, wherein the intermediate layer is the copper foil carrier. When nickel and molybdenum or cobalt or molybdenum-cobalt alloy are laminated in this order from the side, the intermediate layer has an adhesion amount of nickel of 1000 to 40000 μg / dm ² , and molybdenum is included when molybdenum is included. the adhesion amount 50 ~ 1000μg / dm ^2, when comprising cobalt is deposited amount 50 ~ 1000 [mu] g / dm ² of cobalt, from the cross-section of the copper foil carrier / intermediate layer / ultra-thin copper layer, these in this order When a 50 to 1000 nm long STEM line analysis is performed in a range including all of the above, the maximum nickel concentration is 50 to 95% by mass, and Ultrathin copper layer side of Kell, a copper foil with carrier in which molybdenum or cobalt is present from 1 to 50% by weight at the maximum value.

In one embodiment of the copper foil with a carrier according to the present invention, when the insulating substrate is thermocompression bonded to the ultrathin copper layer under the conditions of pressure: 20 kgf / cm ² and 220 ° C. × 2 hours in the atmosphere, When a 50 to 1000 nm long STEM line analysis is performed in a range including all of the copper foil carrier / intermediate layer / ultra thin copper layer in this order, the maximum nickel concentration is 50 to 95% by mass. In addition, molybdenum or cobalt is present at a maximum value of 1 to 50% by mass on the ultrathin copper layer side from nickel.

In another embodiment of the copper foil with a carrier according to the present invention, the insulating substrate is thermocompression bonded to the ultrathin copper layer in the atmosphere under the conditions of pressure: 20 kgf / cm ² and 220 ° C. × 2 hours. In addition, from the cross section of the copper foil carrier / intermediate layer / ultra-thin copper layer, nickel, molybdenum and / or cobalt, and copper coexist when a 50 to 1000 nm long STEM line analysis is performed in a range including all of them. The minimum value of the copper concentration at the location to be applied is 10 to 65% by mass.

In yet another embodiment of the copper foil with a carrier according to the present invention, the concentration of cobalt in the molybdenum-cobalt alloy in the intermediate layer is 20 to 80% by mass.

In yet another embodiment of the copper foil with a carrier according to the present invention, the copper foil carrier is formed of an electrolytic copper foil or a rolled copper foil.

In yet another embodiment of the copper foil with a carrier according to the present invention, the surface of the ultrathin copper layer has a roughening treatment layer.

In yet another embodiment of the copper foil with a carrier according to the present invention, the roughening layer is any selected from the group consisting of copper, nickel, cobalt, phosphorus, tungsten, arsenic, molybdenum, chromium and zinc. It is the layer which consists of an alloy containing these 1 type or any 1 type or more.

In yet another embodiment of the copper foil with a carrier according to the present invention, the surface of the roughening treatment layer was selected from the group consisting of a heat-resistant layer, a rust prevention layer, a chromate treatment layer, and a silane coupling treatment layer. It has one or more layers.

In still another embodiment of the copper foil with a carrier according to the present invention, the surface of the ultrathin copper layer is selected from the group consisting of a heat-resistant layer, a rust-proof layer, a chromate treatment layer, and a silane coupling treatment layer. It has one or more layers.

In yet another embodiment of the copper foil with a carrier according to the present invention, a resin layer is provided on the ultrathin copper layer.

In yet another embodiment of the copper foil with a carrier according to the present invention, a resin layer is provided on the roughening treatment layer.

In still another embodiment of the carrier-attached copper foil according to the present invention, on one or more layers selected from the group consisting of the heat-resistant layer, the rust-preventing layer, the chromate treatment layer, and the silane coupling treatment layer. A resin layer is provided.

In yet another embodiment of the copper foil with a carrier according to the present invention, the resin layer includes a dielectric.

In yet another aspect, the present invention is a printed wiring board manufactured using the copper foil with a carrier of the present invention.

In still another aspect, the present invention is a printed circuit board manufactured using the copper foil with a carrier of the present invention.

In yet another aspect, the present invention is a copper-clad laminate manufactured using the carrier-attached copper foil of the present invention.

In yet another aspect of the present invention, a nickel layer is formed on a copper foil carrier by dry plating or wet plating, and a molybdenum layer, a cobalt layer, or a molybdenum-cobalt alloy layer is formed on the nickel layer. The method for producing a copper foil with a carrier according to the present invention comprising a step of forming an intermediate layer and a step of forming an ultrathin copper layer on the intermediate layer by electroplating.

In an embodiment of the method for producing a copper foil with a carrier according to the present invention, the method further includes a step of forming a roughened layer on the ultrathin copper layer.

In another aspect of the present invention, a step of preparing the carrier-attached copper foil of the present invention and an insulating substrate,
Laminating the copper foil with carrier and an insulating substrate;
After laminating the carrier-attached copper foil and the insulating substrate, a copper-clad laminate is formed through a step of peeling the carrier of the carrier-attached copper foil,
Thereafter, the printed wiring board manufacturing method includes a step of forming a circuit by any one of a semi-additive method, a subtractive method, a partly additive method, or a modified semi-additive method.

In yet another aspect of the present invention, a step of forming a circuit on the ultrathin copper layer side surface of the copper foil with a carrier of the present invention,
Forming a resin layer on the ultrathin copper layer side surface of the carrier-attached copper foil so that the circuit is buried;
Forming a circuit on the resin layer;
Forming the circuit on the resin layer, and then peeling the carrier; and
After the carrier is peeled off, the printed wiring board includes a step of exposing the circuit embedded in the resin layer formed on the surface of the ultrathin copper layer by removing the ultrathin copper layer Is the method.

In one embodiment of the method for producing a printed wiring board according to the present invention, the step of forming a circuit on the resin layer is performed by laminating another copper foil with a carrier on the resin layer from the ultrathin copper layer side. In this step, the circuit is formed using a copper foil with a carrier bonded to a layer.

In another embodiment of the method for producing a printed wiring board of the present invention, another copper foil with a carrier to be bonded onto the resin layer is the copper foil with a carrier of the present invention.

In still another embodiment of the method for producing a printed wiring board of the present invention, the step of forming a circuit on the resin layer is any one of a semi-additive method, a subtractive method, a partly additive method, or a modified semi-additive method. Done by the method.

In yet another embodiment of the method for producing a printed wiring board of the present invention, the copper foil with carrier for forming a circuit on the surface has a substrate or a resin layer on the surface of the carrier of the copper foil with carrier.

The copper foil with a carrier according to the present invention has high adhesion between the carrier and the ultrathin copper layer before the lamination process to the insulating substrate, while the carrier and the ultrathin copper layer after the lamination process to the insulation substrate. Adhesiveness is lowered, it can be easily peeled off at the carrier / ultra-thin copper layer interface, and the occurrence of pinholes on the surface of the ultra-thin copper layer can be well suppressed.

FIGS. 8A to 8C are schematic views of a cross section of a wiring board in a process up to circuit plating and resist removal according to a specific example of a method of manufacturing a printed wiring board using the carrier-attached copper foil of the present invention. D to F are schematic views of the cross section of the wiring board in the process from the lamination of the resin and the second-layer copper foil with a carrier to the laser drilling according to a specific example of the method for manufacturing a printed wiring board using the copper foil with a carrier of the present invention. It is. GI are schematic views of the cross section of the wiring board in the steps from via fill formation to first layer carrier peeling, according to a specific example of the method for producing a printed wiring board using the copper foil with carrier of the present invention. J to K are schematic views of a cross section of a wiring board in steps from flash etching to bump / copper pillar formation according to a specific example of a method of manufacturing a printed wiring board using the carrier-attached copper foil of the present invention. 6 is a cross-sectional concentration profile after pressure bonding of a substrate according to Example 5. It is a density | concentration profile of the cross section after the board | substrate crimping | compression-bonding which concerns on the comparative example 3. FIG. It is a schematic diagram which shows the measurement location of the sample sheet which concerns on an Example.

<1. Career>
A copper foil is used as a carrier that can be used in the present invention. The carrier is typically provided in the form of rolled copper foil or electrolytic copper foil. In general, the electrolytic copper foil is produced by electrolytic deposition of copper from a copper sulfate plating bath onto a drum of titanium or stainless steel, and the rolled copper foil is produced by repeating plastic working and heat treatment with a rolling roll. In addition to high-purity copper such as tough pitch copper and oxygen-free copper, the copper foil material is, for example, Sn-containing copper, Ag-containing copper, copper alloy added with Cr, Zr, Mg, etc., and Corson-based added with Ni, Si, etc. Copper alloys such as copper alloys can also be used. In addition, when the term “copper foil” is used alone in this specification, a copper alloy foil is also included.

The thickness of the carrier that can be used in the present invention is not particularly limited, but may be appropriately adjusted to a thickness suitable for serving as a carrier, for example, 12 μm or more. However, if it is too thick, the production cost becomes high, so generally it is preferably 35 μm or less. Accordingly, the thickness of the carrier is typically 12-300 μm, more typically 12-150 μm, more typically 12-100 μm, more typically 12-70 μm, and more Typically 18 to 35 μm.

<2. Intermediate layer>
An intermediate layer is provided on the copper foil carrier. Another layer may be provided between the copper foil carrier and the intermediate layer. The intermediate layer is formed by laminating nickel and molybdenum or cobalt or a molybdenum-cobalt alloy in this order from the copper foil carrier side. Since the adhesive force between nickel and copper is higher than the adhesive force between molybdenum or cobalt and copper, when the ultrathin copper layer is peeled off, it peels at the interface between the ultrathin copper layer and molybdenum or cobalt. Further, the nickel of the intermediate layer is expected to have a barrier effect that prevents the copper component from diffusing from the carrier into the ultrathin copper layer. Moreover, you may provide an intermediate | middle layer in both surfaces of a copper foil carrier.
When using electrolytic copper foil as a carrier, it is preferable to provide an intermediate layer on the shiny surface from the viewpoint of reducing pinholes.

Molybdenum or cobalt or molybdenum-cobalt alloy in the intermediate layer is thinly present at the interface of the ultrathin copper layer. It is preferable for obtaining the property that the ultrathin copper layer can be peeled off from the carrier after the laminating step. When molybdenum or cobalt or molybdenum-cobalt alloy is present at the boundary between the carrier and the ultrathin copper layer without providing a nickel layer, the peelability is hardly improved, and there is no molybdenum or cobalt or molybdenum-cobalt alloy and the nickel layer. When the ultrathin copper layer is directly laminated, the peel strength is too strong or too weak depending on the amount of nickel in the nickel layer, and an appropriate peel strength cannot be obtained.

In addition, if molybdenum or cobalt or molybdenum-cobalt alloy is present at the boundary between the carrier and the nickel layer, the intermediate layer is also peeled along with the peeling of the ultrathin copper layer, that is, peeling occurs between the carrier and the intermediate layer. This is not preferable. This situation occurs not only when molybdenum, cobalt, or molybdenum-cobalt alloy is provided at the interface with the carrier, but also when molybdenum, cobalt, or molybdenum-cobalt alloy is provided at the interface with the ultrathin copper layer. Or it may occur when the amount of cobalt is too large. This is because copper and nickel are likely to be in solid solution, so if they are in contact with each other, the adhesive force increases due to mutual diffusion and it is difficult to peel off, while molybdenum or cobalt and copper are less likely to dissolve and mutual diffusion. This is considered to be because the adhesive strength is weak at the interface between molybdenum or cobalt or molybdenum-cobalt alloy and copper, and peeling easily occurs. Further, when the amount of nickel in the intermediate layer is insufficient, there is only a small amount of molybdenum or cobalt between the carrier and the ultrathin copper layer, so that they are in close contact and difficult to peel off.

The nickel and cobalt or molybdenum-cobalt alloy of the intermediate layer can be formed by wet plating such as electroplating, electroless plating and immersion plating, or dry plating such as sputtering, CVD and PDV. Molybdenum can be formed only by dry plating such as CVD and PDV. Electroplating is preferable from the viewpoint of cost.

In the intermediate layer, the adhesion amount of nickel 1000 ~ 40000μg / dm ^2, coating weight 50 ~ 1000μg / dm ² of molybdenum case containing molybdenum, at a coverage of cobalt 50 ~ 1000μg / dm ² when containing cobalt is there. Although the amount of pinholes tends to increase as the amount of nickel increases, the number of pinholes is also suppressed within this range. From the viewpoint of evenly peeling the ultrathin copper layer uniformly and from the viewpoint of suppressing pinholes, the nickel adhesion amount is preferably 5000 to 20000 μg / dm ^2, and 7500 to 15000 μg / dm ^2. More preferred. When molybdenum is included, the molybdenum adhesion amount is preferably 80 to 600 μg / dm ^2, and more preferably 100 to 400 μg / dm ² . When cobalt is included, the amount of cobalt adhesion is preferably 80 to 600 μg / dm ^2, and more preferably 100 to 400 μg / dm ² . In the case where a layer containing molybdenum and cobalt is provided in the intermediate layer, the total adhesion amount of molybdenum and cobalt is preferably 50 to 1200 μg / dm ² . The total adhesion amount of molybdenum and cobalt is preferably 100 to 1000 μg / dm ^2, and more preferably 150 to 700 μg / dm ² .

<3. Strike plating>
An ultrathin copper layer is provided on the intermediate layer. Before that, strike plating with a copper-phosphorus alloy may be performed on the chromium layer of the intermediate layer in order to reduce pinholes in the ultrathin copper layer. A copper pyrophosphate plating solution or the like can be used as the strike plating treatment solution. Thus, the carrier-added copper foil subjected to strike plating with a copper-phosphorus alloy has phosphorus on both the intermediate layer surface and the ultrathin copper layer surface. For this reason, when it peels between an intermediate | middle layer / ultra thin copper layer, phosphorus is detected from the surface of an intermediate | middle layer and an ultra-thin copper layer. In addition, since the plating layer formed by strike plating becomes thin, cross-sectional observation is performed with FIB, TEM, etc., and when the thickness of the copper phosphorous plating layer on the intermediate layer is 0.1 μm or less, it is strike plating. Can be determined.

<4. Ultra-thin copper layer>
An ultrathin copper layer is provided on the intermediate layer. Another layer may be provided between the intermediate layer and the ultrathin copper layer. Preferably, the ultra-thin copper layer can be formed by electroplating using an electrolytic bath such as copper sulfate, copper pyrophosphate, copper sulfamate, and copper cyanide, and is used in a general electrolytic copper foil. A copper sulfate bath is preferred because copper foil can be formed at a current density. The thickness of the ultrathin copper layer is not particularly limited, but is generally thinner than the carrier, for example, 12 μm or less. Typically 0.5 to 12 μm, more typically 2 to 5 μm. In addition, you may provide an ultra-thin copper layer on both surfaces of a copper foil carrier.

<5. Roughening and other surface treatments>
A roughening treatment layer may be provided on the surface of the ultrathin copper layer by performing a roughening treatment, for example, in order to improve the adhesion to the insulating substrate. The roughening treatment can be performed, for example, by forming roughened particles with copper or a copper alloy. The roughening process may be fine. The roughening treatment layer is a layer made of any single element selected from the group consisting of copper, nickel, cobalt, phosphorus, tungsten, arsenic, molybdenum, chromium and zinc, or an alloy containing one or more of them. Also good. Moreover, after forming the roughened particles with copper or a copper alloy, a roughening treatment can be performed in which secondary particles or tertiary particles are further formed of nickel, cobalt, copper, zinc alone or an alloy. Thereafter, a heat-resistant layer or a rust-preventing layer may be formed of copper, nickel, cobalt, zinc alone or an alloy, and the surface may be further subjected to a treatment such as a chromate treatment or a silane coupling treatment. Alternatively, a heat-resistant layer or a rust-preventing layer may be formed of copper, nickel, cobalt, zinc alone or an alloy without roughening, and the surface may be subjected to a treatment such as chromate treatment or silane coupling treatment. Good. That is, one or more layers selected from the group consisting of a heat-resistant layer, a rust-preventing layer, a chromate treatment layer, and a silane coupling treatment layer may be formed on the surface of the roughening treatment layer. One or more layers selected from the group consisting of a heat-resistant layer, a rust prevention layer, a chromate treatment layer, and a silane coupling treatment layer may be formed on the surface. In addition, the above-mentioned heat-resistant layer, rust prevention layer, chromate treatment layer, and silane coupling treatment layer may each be formed of a plurality of layers such as 2 layers or more and 3 layers or more.

As the heat-resistant layer and the rust-proof layer, known heat-resistant layers and rust-proof layers can be used. For example, the heat-resistant layer and / or the anticorrosive layer is a group of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, platinum group elements, iron, tantalum A layer containing one or more elements selected from nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, platinum group elements Further, it may be a metal layer or an alloy layer made of one or more elements selected from the group consisting of iron, tantalum and the like. The heat-resistant layer and / or rust preventive layer is a group of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, platinum group elements, iron, and tantalum. An oxide, nitride, or silicide containing one or more elements selected from the above may be included. Further, the heat-resistant layer and / or the rust preventive layer may be a layer containing a nickel-zinc alloy. Further, the heat-resistant layer and / or the rust preventive layer may be a nickel-zinc alloy layer. The nickel-zinc alloy layer may contain 50 wt% to 99 wt% nickel and 50 wt% to 1 wt% zinc, excluding inevitable impurities. The total adhesion amount of zinc and nickel in the nickel-zinc alloy layer may be 5 to 1000 mg / m ² , preferably 10 to 500 mg / m ² , preferably 20 to 100 mg / m ² . The ratio of the nickel adhesion amount and the zinc adhesion amount of the layer containing the nickel-zinc alloy or the nickel-zinc alloy layer (= nickel adhesion amount / zinc adhesion amount) is 1.5 to 10. It is preferable. Further, the amount of nickel deposited on the layer containing the nickel-zinc alloy or the nickel-zinc alloy layer is preferably 0.5 mg / m ² to 500 mg / m ² , and 1 mg / m ² to 50 mg / m ² . More preferably. When the heat-resistant layer and / or rust prevention layer is a layer containing a nickel-zinc alloy, the interface between the copper foil and the resin substrate is eroded by the desmear liquid when the inner wall of a through hole or via hole comes into contact with the desmear liquid. It is difficult to improve the adhesion between the copper foil and the resin substrate.

For example, the heat-resistant layer and / or the rust preventive layer has a nickel or nickel alloy layer with an adhesion amount of 1 mg / m ² to 100 mg / m ² , preferably 5 mg / m ² to 50 mg / m ² , and an adhesion amount of 1 mg / m ^2. A tin layer of ˜80 mg / m ² , preferably 5 mg / m ² ˜40 mg / m ² may be sequentially laminated. The nickel alloy layer may be nickel-molybdenum, nickel-zinc, nickel-molybdenum-cobalt. You may be comprised by any one of these. The heat-resistant layer and / or rust-preventing layer preferably has a total adhesion amount of nickel or nickel alloy and tin of 2 mg / m ² to 150 mg / m ² and 10 mg / m ² to 70 mg / m ² . It is more preferable. In addition, the heat-resistant layer and / or the rust-preventing layer preferably has [amount of nickel deposited in nickel or nickel alloy] / [amount of tin deposited] = 0.25 to 10, preferably 0.33 to 3. More preferred. When the heat-resistant layer and / or rust-preventing layer is used, the carrier-clad copper foil is processed into a printed wiring board, and the subsequent circuit peeling strength, the chemical resistance deterioration rate of the peeling strength, and the like are improved.

In addition, you may use a well-known silane coupling agent for the silane coupling agent used for a silane coupling process, for example, using an amino-type silane coupling agent or an epoxy-type silane coupling agent, a mercapto-type silane coupling agent. Good. Silane coupling agents include vinyltrimethoxysilane, vinylphenyltrimethoxylane, γ-methacryloxypropyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, 4-glycidylbutyltrimethoxysilane, and γ-aminopropyl. Triethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-3- (4- (3-aminopropoxy) ptoxy) propyl-3-aminopropyltrimethoxysilane, imidazolesilane, triazinesilane, γ-mercaptopropyltrimethoxysilane or the like may be used.

The silane coupling treatment layer may be formed using a silane coupling agent such as epoxy silane, amino silane, methacryloxy silane, mercapto silane, or the like. In addition, you may use 2 or more types of such silane coupling agents in mixture. Especially, it is preferable to form using an amino-type silane coupling agent or an epoxy-type silane coupling agent.

The amino silane coupling agent referred to here is N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, 3- (N-styrylmethyl-2-aminoethylamino) propyltrimethoxysilane, 3- Aminopropyltriethoxysilane, bis (2-hydroxyethyl) -3-aminopropyltriethoxysilane, aminopropyltrimethoxysilane, N-methylaminopropyltrimethoxysilane, N-phenylaminopropyltrimethoxysilane, N- (3 -Acryloxy-2-hydroxypropyl) -3-aminopropyltriethoxysilane, 4-aminobutyltriethoxysilane, (aminoethylaminomethyl) phenethyltrimethoxysilane, N- (2-aminoethyl-3-aminopropyl) Trimethoxysilane, -(2-aminoethyl-3-aminopropyl) tris (2-ethylhexoxy) silane, 6- (aminohexylaminopropyl) trimethoxysilane, aminophenyltrimethoxysilane, 3- (1-aminopropoxy) -3,3 -Dimethyl-1-propenyltrimethoxysilane, 3-aminopropyltris (methoxyethoxyethoxy) silane, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, ω-aminoundecyltrimethoxysilane, 3- ( 2-N-benzylaminoethylaminopropyl) trimethoxysilane, bis (2-hydroxyethyl) -3-aminopropyltriethoxysilane, (N, N-diethyl-3-aminopropyl) trimethoxysilane, (N, N -Dimethyl-3-aminopropyl) Trimethoxysilane, N-methylaminopropyltrimethoxysilane, N-phenylaminopropyltrimethoxysilane, 3- (N-styrylmethyl-2-aminoethylamino) propyltrimethoxysilane, γ-aminopropyltriethoxysilane, N -Β (aminoethyl) γ-aminopropyltrimethoxysilane, N-3- (4- (3-aminopropoxy) ptoxy) propyl-3-aminopropyltrimethoxysilane may be selected from the group consisting of Good.

The silane coupling treatment layer is 0.05 mg / m ² to 200 mg / m ² , preferably 0.15 mg / m ² to 20 mg / m ² , preferably 0.3 mg / m ² to 2.0 mg in terms of silicon atoms. / M ² is desirable. In the case of the above-mentioned range, the adhesiveness between the base resin and the surface-treated copper foil can be further improved.

Further, on the surface of an ultrathin copper layer, a roughening treatment layer, a heat-resistant layer, a rust prevention layer, a silane coupling treatment layer or a chromate treatment layer, International Publication No. WO2008 / 053878, JP2008-1111169, Patent No. 5024930 Surface treatment described in International Publication No. WO2006 / 028207, Patent No. 4828427, International Publication No. WO2006 / 134868, Patent No. 5046927, International Publication No. WO2007 / 105635, Patent No. 5180815, JP2013-19056A be able to.

<5. Resin layer>
Resin layer on ultrathin copper layer of copper foil with carrier of the present invention (surface treatment layer formed on ultrathin copper layer by surface treatment when ultrathin copper layer is surface-treated) May be provided. The resin layer may be an insulating resin layer.

The resin layer may be an adhesive resin, that is, an adhesive, or may be a semi-cured (B-stage) insulating resin layer for adhesion. The semi-cured state (B stage state) is a state in which there is no sticky feeling even if the surface is touched with a finger, the insulating resin layer can be stacked and stored, and a curing reaction occurs when subjected to heat treatment. Including that.

The resin layer may contain a thermosetting resin or a thermoplastic resin. The resin layer may include a thermoplastic resin. The resin layer may contain a known resin, resin curing agent, compound, curing accelerator, dielectric, reaction catalyst, crosslinking agent, polymer, prepreg, skeleton material, and the like. The resin layer may be, for example, International Publication No. WO2008 / 004399, International Publication No. WO2008 / 053878, International Publication No. WO2009 / 084533, JP-A-11-5828, JP-A-11-140281, Patent 3184485, International Publication No. WO 97/02728, Japanese Patent No. 3676375, Japanese Patent Laid-Open No. 2000-43188, Japanese Patent No. 3612594, Japanese Patent Laid-Open No. 2002-179772, Japanese Patent Laid-Open No. 2002-359444, Japanese Patent Laid-Open No. 2003-302068, Japanese Patent No. 3992225, Japanese Patent Laid-Open No. 2003 -249739, Japanese Patent No. 4136509, Japanese Patent Application Laid-Open No. 2004-82687, Japanese Patent No. 4025177, Japanese Patent Application Laid-Open No. 2004-349654, Japanese Patent No. 4286060, Japanese Patent Application Laid-Open No. 2005-262506, Japanese Patent No. 4570070, and Japanese Patent Application Laid-Open No. 4570070. No. 5-53218, Japanese Patent No. 3949676, Japanese Patent No. 4178415, International Publication No. WO2004 / 005588, Japanese Patent Application Laid-Open No. 2006-257153, Japanese Patent Application Laid-Open No. 2007-326923, Japanese Patent Application Laid-Open No. 2008-11169, and Japanese Patent No. 5024930. No. WO2006 / 028207, Japanese Patent No. 4828427, JP 2009-67029, International Publication No. WO 2006/134868, Japanese Patent No. 5046927, JP 2009-173017, International Publication No. WO 2007/105635, Patent No. 5180815, International Publication No. WO 2008/114858, International Publication Number WO 2009/008471, JP 2011-14727, International Publication Number WO 2009/001850, International Publication Number WO 2009/145179, International Publication Number Nos. WO2011 / 068157 and JP2013-19056 (resins, resin curing agents, compounds, curing accelerators, dielectrics, reaction catalysts, crosslinking agents, polymers, prepregs, skeletal materials, etc.) and / or You may form using the formation method and formation apparatus of a resin layer.

The type of the resin layer is not particularly limited. For example, epoxy resin, polyimide resin, polyfunctional cyanate ester compound, maleimide compound, polymaleimide compound, maleimide resin, aromatic maleimide resin , Polyvinyl acetal resin, urethane resin, polyethersulfone (also referred to as polyethersulfone or polyethersulfone), polyethersulfone (also referred to as polyethersulfone or polyethersulfone) resin, aromatic polyamide resin, aromatic Polyamide resin polymer, rubber resin, polyamine, aromatic polyamine, polyamideimide resin, rubber modified epoxy resin, phenoxy resin, carboxyl group-modified acrylonitrile-butadiene resin, polyphenylene oxide, bismaleimide triazine Resins, thermosetting polyphenylene oxide resins, cyanate ester resins, carboxylic acid anhydrides, polyvalent carboxylic acid anhydrides, linear polymers having crosslinkable functional groups, polyphenylene ether resins, 2,2-bis (4 -Cyanatophenyl) propane, phosphorus-containing phenolic compound, manganese naphthenate, 2,2-bis (4-glycidylphenyl) propane, polyphenylene ether-cyanate resin, siloxane-modified polyamideimide resin, cyanoester resin, phosphazene resin, Rubber-modified polyamide-imide resin, isoprene, hydrogenated polybutadiene, polyvinyl butyral, phenoxy, polymer epoxy, aromatic polyamide, fluororesin, bisphenol, block copolymerized polyimide resin, and cyanoester resin It can be mentioned resins containing one or more kinds that is as suitable.

The epoxy resin has two or more epoxy groups in the molecule and can be used without any problem as long as it can be used for electric / electronic materials. The epoxy resin is preferably an epoxy resin epoxidized using a compound having two or more glycidyl groups in the molecule. Also, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AD type epoxy resin, novolac type epoxy resin, cresol novolac type epoxy resin, alicyclic epoxy resin, brominated (brominated) epoxy Resin, phenol novolac type epoxy resin, naphthalene type epoxy resin, brominated bisphenol A type epoxy resin, orthocresol novolac type epoxy resin, rubber modified bisphenol A type epoxy resin, glycidylamine type epoxy resin, triglycidyl isocyanurate, N, N -Glycidylamine compounds such as diglycidyl aniline, glycidyl ester compounds such as diglycidyl tetrahydrophthalate, phosphorus-containing epoxy resins, biphenyl type epoxy resin , Biphenyl novolac type epoxy resin, trishydroxyphenylmethane type epoxy resin, tetraphenylethane type epoxy resin, or a mixture of two or more types, or a hydrogenated product of the epoxy resin Or a halogenated compound can be used.
As the phosphorus-containing epoxy resin, a known epoxy resin containing phosphorus can be used. The phosphorus-containing epoxy resin is, for example, an epoxy resin obtained as a derivative from 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide having two or more epoxy groups in the molecule. Is preferred.

The epoxy resin obtained as a derivative from 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide is converted to 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide. After reacting naphthoquinone or hydroquinone to obtain a compound represented by the following chemical formula 1 (HCA-NQ) or chemical formula 2 (HCA-HQ), an epoxy resin is reacted with the OH group portion to obtain a phosphorus-containing epoxy resin. Is.

The phosphorus-containing epoxy resin, which is the component E obtained using the above-mentioned compound as a raw material, is a mixture of one or two compounds having the structural formula shown in any one of the following chemical formulas 3 to 5. Is preferred. This is because the resin quality in a semi-cured state is excellent in stability, and at the same time, the flame retardant effect is high.

Further, as the brominated (brominated) epoxy resin, a known brominated (brominated) epoxy resin can be used. For example, the brominated (brominated) epoxy resin is a brominated epoxy resin having the structural formula shown in Chemical formula 6 obtained as a derivative from tetrabromobisphenol A having two or more epoxy groups in the molecule. It is preferable to use one or two brominated epoxy resins having the structural formula shown in FIG.

As the maleimide resin, aromatic maleimide resin, maleimide compound or polymaleimide compound, known maleimide resins, aromatic maleimide resins, maleimide compounds or polymaleimide compounds can be used. For example, as maleimide resin or aromatic maleimide resin or maleimide compound or polymaleimide compound, 4,4′-diphenylmethane bismaleimide, polyphenylmethane maleimide, m-phenylene bismaleimide, bisphenol A diphenyl ether bismaleimide, 3,3′-dimethyl -5,5'-diethyl-4,4'-diphenylmethane bismaleimide, 4-methyl-1,3-phenylene bismaleimide, 4,4'-diphenyl ether bismaleimide, 4,4'-diphenylsulfone bismaleimide, 1, It is possible to use 3-bis (3-maleimidophenoxy) benzene, 1,3-bis (4-maleimidophenoxy) benzene and a polymer obtained by polymerizing the above compound with the above compound or other compounds. The maleimide resin may be an aromatic maleimide resin having two or more maleimide groups in the molecule, and an aromatic maleimide resin having two or more maleimide groups in the molecule and a polyamine or aromatic polyamine. Polymerization adducts obtained by polymerizing and may be used.
As the polyamine or aromatic polyamine, known polyamines or aromatic polyamines can be used. For example, as polyamine or aromatic polyamine, m-phenylenediamine, p-phenylenediamine, 4,4′-diaminodicyclohexylmethane, 1,4-diaminocyclohexane, 2,6-diaminopyridine, 4,4′-diaminodiphenylmethane, 2,2-bis (4-aminophenyl) propane, 4,4′-diaminodiphenyl ether, 4,4′-diamino-3-methyldiphenyl ether, 4,4′-diaminodiphenyl sulfide, 4,4′-diaminobenzophenone, 4,4'-diaminodiphenylsulfone, bis (4-aminophenyl) phenylamine, m-xylenediamine, p-xylenediamine, 1,3-bis [4-aminophenoxy] benzene, 3-methyl-4,4 ' -Diaminodiphenylmethane, 3,3'-diethyl-4 4′-diaminodiphenylmethane, 3,3′-dichloro-4,4′-diaminodiphenylmethane, 2,2 ′, 5,5′-tetrachloro-4,4′-diaminodiphenylmethane, 2,2-bis (3- Methyl-4-aminophenyl) propane, 2,2-bis (3-ethyl-4-aminophenyl) propane, 2,2-bis (2,3-dichloro-4-aminophenyl) propane, bis (2,3 -Dimethyl-4-aminophenyl) phenylethane, ethylenediamine and hexamethylenediamine, 2,2-bis (4- (4-aminophenoxy) phenyl) propane and the above compound were polymerized with the above compound or other compounds A polymer or the like can be used. Moreover, 1 type, or 2 or more types of well-known polyamine and / or aromatic polyamine or the above-mentioned polyamine or aromatic polyamine can be used.
A known phenoxy resin can be used as the phenoxy resin. Moreover, what is synthesize | combined by reaction of bisphenol and a bivalent epoxy resin can be used as said phenoxy resin. As an epoxy resin, a well-known epoxy resin and / or the above-mentioned epoxy resin can be used.
As the bisphenol, known bisphenols can be used, and bisphenol A, bisphenol F, bisphenol S, tetrabromobisphenol A, 4,4′-dihydroxybiphenyl, HCA (9,10-Dihydro-9-Oxa- Bisphenol obtained as an adduct of 10-phosphophenanthrene-10-oxide) and quinones such as hydroquinone and naphthoquinone can be used.
As the linear polymer having a crosslinkable functional group, a known linear polymer having a crosslinkable functional group can be used. For example, the linear polymer having a crosslinkable functional group preferably has a functional group that contributes to the curing reaction of an epoxy resin such as a hydroxyl group or a carboxyl group. The linear polymer having a crosslinkable functional group is preferably soluble in an organic solvent having a boiling point of 50 ° C. to 200 ° C. Specific examples of the linear polymer having a functional group mentioned here include polyvinyl acetal resin, phenoxy resin, polyethersulfone resin, polyamideimide resin and the like.
The resin layer may contain a crosslinking agent. A known crosslinking agent can be used as the crosslinking agent. For example, a urethane-based resin can be used as the crosslinking agent.
A known rubber resin can be used as the rubber resin. For example, the rubbery resin is described as a concept including natural rubber and synthetic rubber. The latter synthetic rubber includes styrene-butadiene rubber, butadiene rubber, butyl rubber, ethylene-propylene rubber, acrylonitrile butadiene rubber, acrylic rubber ( Acrylic ester copolymer), polybutadiene rubber, isoprene rubber and the like. Furthermore, when ensuring the heat resistance of the resin layer to be formed, it is also useful to select and use a synthetic rubber having heat resistance such as nitrile rubber, chloroprene rubber, silicon rubber, urethane rubber or the like. Regarding these rubber resins, it is desirable to have various functional groups at both ends in order to produce a copolymer by reacting with an aromatic polyamide resin or a polyamideimide resin. In particular, it is useful to use CTBN (carboxy group-terminated butadiene nitrile). Moreover, among acrylonitrile butadiene rubbers, a carboxyl-modified product can take a crosslinked structure with an epoxy resin and improve the flexibility of the cured resin layer. As the carboxyl-modified product, carboxy group-terminated nitrile butadiene rubber (CTBN), carboxy group-terminated butadiene rubber (CTB), and carboxy-modified nitrile butadiene rubber (C-NBR) can be used.
A known polyimide amide resin can be used as the polyamide imide resin. In addition, as the polyimide amide resin, for example, trimellitic anhydride, benzophenonetetracarboxylic anhydride and vitorylene diisocyanate are heated in a solvent such as N-methyl-2-pyrrolidone and / or N, N-dimethylacetamide. By heating the resin obtained in this way, trimellitic anhydride, diphenylmethane diisocyanate and carboxyl group-terminated acrylonitrile-butadiene rubber in a solvent such as N-methyl-2-pyrrolidone and / or N, N-dimethylacetamide. What is obtained can be used.
A known rubber-modified polyamideimide resin can be used as the rubber-modified polyamideimide resin. The rubber-modified polyamideimide resin is obtained by reacting a polyamideimide resin and a rubber resin. The reaction of the polyamide-imide resin and the rubber resin is performed for the purpose of improving the flexibility of the polyamide-imide resin itself. That is, the polyamideimide resin and the rubber resin are reacted to replace a part of the acid component (cyclohexanedicarboxylic acid or the like) of the polyamideimide resin with the rubber component. A known polyamideimide resin can be used as the polyamideimide resin. As the rubber resin, a known rubber resin or the aforementioned rubber resin can be used. Solvents used for dissolving the polyamideimide resin and the rubbery resin when polymerizing the rubber-modified polyamideimide resin include dimethylformamide, dimethylacetamide, N-methyl-2-pyrrolidone, dimethylsulfoxide, nitromethane, nitroethane, tetrahydrofuran , Cyclohexanone, methyl ethyl ketone, acetonitrile, γ-butyrolactone and the like are preferably used alone or in combination.
A known phosphazene resin can be used as the phosphazene resin. The phosphazene resin is a resin containing phosphazene having a double bond having phosphorus and nitrogen as constituent elements. The phosphazene resin can dramatically improve the flame retardancy due to the synergistic effect of nitrogen and phosphorus in the molecule. In addition, unlike 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide derivatives, they exist stably in the resin, and an effect of preventing the occurrence of migration can be obtained.
A known fluororesin can be used as the fluororesin. Examples of the fluororesin include PTFE (polytetrafluoroethylene (tetrafluoroethylene)), PFA (tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer), FEP (tetrafluoroethylene / hexafluoropropylene copolymer (4.6). Fluoride)), ETFE (tetrafluoroethylene / ethylene copolymer), PVDF (polyvinylidene fluoride (difluoride)), PCTFE (polychlorotrifluoroethylene (trifluoride)), polyallylsulfone, aromatic A fluororesin composed of at least one thermoplastic resin selected from polysulfide and aromatic polyether and a fluororesin may be used.
The resin layer may contain a resin curing agent. A known resin curing agent can be used as the resin curing agent. For example, resin curing agents include amines such as dicyandiamide, imidazoles and aromatic amines, phenols such as bisphenol A and brominated bisphenol A, novolaks such as phenol novolac resins and cresol novolac resins, and acid anhydrides such as phthalic anhydride. Products, biphenyl type phenol resins, phenol aralkyl type phenol resins and the like can be used. The resin layer may contain one or more of the aforementioned resin curing agents. These curing agents are particularly effective for epoxy resins.
A specific example of the biphenyl type phenol resin is shown in Chemical Formula 8.

A specific example of the phenol aralkyl type phenol resin is shown in Chemical Formula 9.

Known imidazoles can be used, such as 2-undecylimidazole, 2-heptadecylimidazole, 2-ethyl-4-methylimidazole, 2-phenyl-4-methylimidazole, 1-cyanoethyl- 2-undecylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5- Hydroxymethylimidazole etc. are mentioned, These can be used individually or in mixture.
Of these, imidazoles having the structural formula shown in Chemical Formula 10 below are preferably used. By using the imidazole having the structural formula shown in Chemical Formula 10, the moisture absorption resistance of the semi-cured resin layer can be remarkably improved, and the long-term storage stability is excellent. This is because imidazoles function as a catalyst during curing of the epoxy resin and contribute as a reaction initiator that causes a self-polymerization reaction of the epoxy resin in the initial stage of the curing reaction.

As the amine resin curing agent, known amines can be used. As the amine resin curing agent, for example, the above-mentioned polyamines and aromatic polyamines can be used, and aromatic polyamines, polyamides, and these are obtained by polymerizing or condensing with epoxy resins or polyvalent carboxylic acids. One or more selected from the group of amine adducts to be used may be used. Examples of the resin curing agent for the amines include 4,4′-diaminodiphenylene sulfone, 3,3′-diaminodiphenylene sulfone, 4,4-diaminodiphenylel, 2,2-bis [4 It is preferable to use at least one of-(4-aminophenoxy) phenyl] propane and bis [4- (4-aminophenoxy) phenyl] sulfone.
The resin layer may contain a curing accelerator. A known curing accelerator can be used as the curing accelerator. For example, as the curing accelerator, tertiary amine, imidazole, urea curing accelerator and the like can be used.
The resin layer may include a reaction catalyst. A known reaction catalyst can be used as the reaction catalyst. For example, finely pulverized silica or antimony trioxide can be used as a reaction catalyst.

The anhydride of the polyvalent carboxylic acid is preferably a component that contributes as a curing agent for the epoxy resin. The anhydride of the polyvalent carboxylic acid is phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, tetrahydroxyphthalic anhydride, hexahydroxyphthalic anhydride, methylhexahydroxyphthalic anhydride, nadine. Acid and methyl nadic acid are preferred.

The thermoplastic resin may be a thermoplastic resin having a functional group other than an alcoholic hydroxyl group polymerizable with an epoxy resin.
The polyvinyl acetal resin may have a functional group polymerizable with an epoxy resin or a maleimide compound other than an acid group and a hydroxyl group. The polyvinyl acetal resin may have a carboxyl group, an amino group or an unsaturated double bond introduced into the molecule.
Examples of the aromatic polyamide resin polymer include those obtained by reacting an aromatic polyamide resin and a rubber resin. Here, the aromatic polyamide resin is synthesized by condensation polymerization of an aromatic diamine and a dicarboxylic acid. As the aromatic diamine at this time, 4,4′-diaminodiphenylmethane, 3,3′-diaminodiphenylsulfone, m-xylenediamine, 3,3′-oxydianiline and the like are used. As the dicarboxylic acid, phthalic acid, isophthalic acid, terephthalic acid, fumaric acid or the like is used.
As the rubber resin to be reacted with the aromatic polyamide resin, a known rubber resin or the aforementioned rubber resin can be used.
This aromatic polyamide resin polymer is used for the purpose of not being damaged by under-etching by an etchant when etching a copper foil after being processed into a copper-clad laminate.

The resin layer is a cured resin layer (the “cured resin layer” means a cured resin layer) and a half in order from the copper foil side (that is, the ultrathin copper layer side of the copper foil with carrier). The resin layer which formed the cured resin layer sequentially may be sufficient. The cured resin layer may be composed of a resin component of any one of a polyimide resin, a polyamideimide resin, and a composite resin having a thermal expansion coefficient of 0 ppm / ° C. to 25 ppm / ° C.

Further, a semi-cured resin layer having a coefficient of thermal expansion after curing of 0 ppm / ° C. to 50 ppm / ° C. may be provided on the cured resin layer. In addition, the thermal expansion coefficient of the entire resin layer after the cured resin layer and the semi-cured resin layer are cured may be 40 ppm / ° C. or less. The cured resin layer may have a glass transition temperature of 300 ° C. or higher. The semi-cured resin layer may be formed using a maleimide resin or an aromatic maleimide resin. The resin composition for forming the semi-cured resin layer preferably contains a maleimide resin, an epoxy resin, and a linear polymer having a crosslinkable functional group. As the epoxy resin, a known epoxy resin or an epoxy resin described in this specification can be used. In addition, as maleimide resins, aromatic maleimide resins, linear polymers having crosslinkable functional groups, known maleimide resins, aromatic maleimide resins, linear polymers having crosslinkable functional groups, or the aforementioned maleimide resins. An aromatic maleimide resin or a linear polymer having a crosslinkable functional group can be used.

Moreover, when providing the copper foil with a carrier which has a resin layer suitable for a three-dimensional molded printed wiring board manufacture use, it is preferable that the said cured resin layer is a polymeric polymer layer which has hardened | cured flexibility. The polymer layer is preferably made of a resin having a glass transition temperature of 150 ° C. or higher so that it can withstand the solder mounting process. The polymer polymer layer is preferably made of one or a mixture of two or more of a polyamide resin, a polyether sulfone resin, an aramid resin, a phenoxy resin, a polyimide resin, a polyvinyl acetal resin, and a polyamideimide resin. The thickness of the polymer layer is preferably 3 μm to 10 μm.
Moreover, it is preferable that the said high molecular polymer layer contains any 1 type, or 2 or more types of an epoxy resin, a maleimide-type resin, a phenol resin, and a urethane resin. The semi-cured resin layer is preferably composed of an epoxy resin composition having a thickness of 10 μm to 50 μm.

The epoxy resin composition preferably contains the following components A to E.
Component A: An epoxy resin having one or more selected from the group consisting of a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, and a bisphenol AD type epoxy resin that have an epoxy equivalent of 200 or less and are liquid at room temperature.
B component: High heat-resistant epoxy resin.
Component C: Phosphorus-containing flame-retardant resin, which is any one of phosphorus-containing epoxy resin and phosphazene-based resin, or a mixture of these.
Component D: A rubber-modified polyamideimide resin modified with a liquid rubber component having a property of being soluble in a solvent having a boiling point in the range of 50 ° C. to 200 ° C.
E component: Resin curing agent.

The B component is a “high heat resistant epoxy resin” having a high so-called glass transition point Tg. The “high heat-resistant epoxy resin” referred to here is preferably a polyfunctional epoxy resin such as a novolac-type epoxy resin, a cresol novolac-type epoxy resin, a phenol novolac-type epoxy resin, or a naphthalene-type epoxy resin.
As the phosphorus-containing epoxy resin of component C, the aforementioned phosphorus-containing epoxy resin can be used. The phosphazene resin described above can be used as the C component phosphazene resin.
The rubber-modified polyamide-imide resin described above can be used as the rubber-modified polyamide-imide resin of component D. The resin curing agent described above can be used as the E component resin curing agent.

A solvent is added to the resin composition shown above and used as a resin varnish to form a thermosetting resin layer as an adhesive layer of a printed wiring board. The resin varnish is prepared by adding a solvent to the resin composition described above so that the resin solid content is in the range of 30 wt% to 70 wt%, and the resin flow when measured in accordance with MIL-P-13949G in the MIL standard. A semi-cured resin film in the range of 5% to 35% can be formed. As the solvent, a known solvent or the aforementioned solvent can be used.

The resin layer is a resin layer having a first thermosetting resin layer and a second thermosetting resin layer located on the surface of the first thermosetting resin layer in order from the copper foil side, The curable resin layer is formed of a resin component that does not dissolve in chemicals during desmear processing in the wiring board manufacturing process, and the second thermosetting resin layer dissolves in chemicals during desmear processing in the wiring board manufacturing process. Then, it may be formed using a resin that can be washed and removed. The first thermosetting resin layer may be formed using a resin component obtained by mixing one or more of polyimide resin, polyethersulfone, and polyphenylene oxide. The second thermosetting resin layer may be formed using an epoxy resin component. The thickness t1 (μm) of the first thermosetting resin layer is Rz (μm) of the roughened surface roughness of the copper foil with carrier, and the thickness of the second thermosetting resin layer is t2 (μm). Then, t1 is preferably a thickness that satisfies the condition of Rz <t1 <t2.

The resin layer may be a prepreg in which a skeleton material is impregnated with a resin. The resin impregnated in the skeleton material is preferably a thermosetting resin. The prepreg may be a known prepreg or a prepreg used for manufacturing a printed wiring board.

The skeleton material may include aramid fibers, glass fibers, or wholly aromatic polyester fibers. The skeleton material is preferably an aramid fiber, a glass fiber, or a nonwoven fabric or woven fabric of wholly aromatic polyester fibers. The wholly aromatic polyester fiber is preferably a wholly aromatic polyester fiber having a melting point of 300 ° C. or higher. The wholly aromatic polyester fiber having a melting point of 300 ° C. or higher is a fiber produced using a resin called a so-called liquid crystal polymer, and the liquid crystal polymer includes 2-hydroxyl-6-naphthoic acid and p-hydroxybenzoic acid. The main component is an acid polymer. Since this wholly aromatic polyester fiber has a low dielectric constant and low dielectric loss tangent, it has excellent performance as a constituent material of an electrically insulating layer and can be used in the same manner as glass fiber and aramid fiber. is there.
In addition, in order to improve the wettability with the resin of the surface, it is preferable to perform the silane coupling agent process for the fiber which comprises the said nonwoven fabric and woven fabric. As the silane coupling agent at this time, a known amino-based or epoxy-based silane coupling agent or the aforementioned silane coupling agent can be used depending on the purpose of use.

The prepreg is a prepreg obtained by impregnating a thermosetting resin into a nonwoven fabric using an aramid fiber or glass fiber having a nominal thickness of 70 μm or less, or a skeleton material made of glass cloth having a nominal thickness of 30 μm or less. Also good.

(When the resin layer contains a dielectric (dielectric filler))
The resin layer may include a dielectric (dielectric filler).
In the case where a dielectric (dielectric filler) is included in any of the above resin layers or resin compositions, it can be used for the purpose of forming the capacitor layer and increase the capacitance of the capacitor circuit. The dielectric (dielectric filler) includes a composite oxide having a perovskite structure such as BaTiO3, SrTiO3, Pb (Zr-Ti) O3 (commonly called PZT), PbLaTiO3 / PbLaZrO (commonly known as PLZT), SrBi2Ta2O9 (commonly known as SBT), and the like. Dielectric powder is used.

The dielectric (dielectric filler) may be powdery. When the dielectric (dielectric filler) is powdery, the powder characteristics of the dielectric (dielectric filler) are as follows. First, the particle size is 0.01 μm to 3.0 μm, preferably 0.02 μm to 2.0 μm. Must be in range. The particle size referred to here is indirect in which the average particle size is estimated from the measured values of the laser diffraction scattering type particle size distribution measurement method and the BET method because the particles form a certain secondary aggregation state. It cannot be used because the accuracy is inferior in measurement, and it refers to the average particle diameter obtained by directly observing a dielectric (dielectric filler) with a scanning electron microscope (SEM) and image analysis of the SEM image. It is. In this specification, the particle size at this time is indicated as DIA. In addition, the image analysis of the dielectric (dielectric filler) powder observed using a scanning electron microscope (SEM) in this specification is performed using an IP-1000PC manufactured by Asahi Engineering Co., Ltd. Circular particle analysis was performed with a threshold value of 10 and an overlapping degree of 20, and the average particle diameter DIA was obtained.
According to the above-described embodiment, the resin layer containing the dielectric for forming the capacitor circuit layer having a low dielectric loss tangent is improved by improving the adhesion between the inner layer circuit surface of the inner layer core material and the resin layer containing the dielectric. The copper foil with a carrier which has can be provided.

Examples of the resin and / or resin composition and / or compound contained in the resin layer include methyl ethyl ketone (MEK), cyclopentanone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene, methanol, ethanol, propylene glycol monomethyl ether , Dimethylformamide, dimethylacetamide, cyclohexanone, ethyl cellosolve, N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide and the like to obtain a resin liquid (resin varnish). On the ultrathin copper layer, or on the heat-resistant layer, rust-preventing layer, chromate-treated layer, or silane coupling agent layer, for example, it is applied by a roll coater method or the like, and then heat-dried as necessary. Removing the solvent Te and to B-stage. For example, a hot air drying furnace may be used for drying, and the drying temperature may be 100 to 250 ° C., preferably 130 to 200 ° C. The resin layer composition is dissolved using a solvent, and the resin solid content is 3 wt% to 70 wt%, preferably 3 wt% to 60 wt%, preferably 10 wt% to 40 wt%, more preferably 25 wt% to 40 wt%. It is good also as a resin liquid. In addition, it is most preferable at this stage from an environmental standpoint to dissolve using a mixed solvent of methyl ethyl ketone and cyclopentanone. It is preferable to use a solvent having a boiling point in the range of 50 ° C. to 200 ° C.
The resin layer is preferably a semi-cured resin film having a resin flow in the range of 5% to 35% when measured according to MIL-P-13949G in the MIL standard.
In this specification, the resin flow is based on MIL-P-13949G in the MIL standard. Four 10 cm square samples were sampled from a resin-coated copper foil with a resin thickness of 55 μm. It is a value calculated based on Equation 1 from the result of measuring the resin outflow weight at the time of laminating under the conditions of a press temperature of 171 ° C., a press pressure of 14 kgf / cm 2, and a press time of 10 minutes in a stacked state (laminate).

The copper foil with a carrier provided with the resin layer (copper foil with a carrier with resin) is superposed on the base material, and the whole is thermocompression bonded to thermally cure the resin layer, and then the carrier is peeled off. Thus, the ultrathin copper layer is exposed (which is naturally the surface on the intermediate layer side of the ultrathin copper layer), and a predetermined wiring pattern is formed thereon.

Using this resin-attached copper foil with a carrier can reduce the number of prepreg materials used when manufacturing a multilayer printed wiring board. In addition, the copper-clad laminate can be manufactured even if the resin layer is made thick enough to ensure interlayer insulation or no prepreg material is used. At this time, the surface smoothness can be further improved by undercoating the surface of the substrate with an insulating resin.

In addition, when the prepreg material is not used, the material cost of the prepreg material is saved and the laminating process is simplified, which is economically advantageous. Moreover, the multilayer printed wiring board manufactured by the thickness of the prepreg material is used. The thickness is reduced, and there is an advantage that an extremely thin multilayer printed wiring board in which the thickness of one layer is 100 μm or less can be manufactured.
The thickness of this resin layer is preferably 0.1 to 120 μm.

When the thickness of the resin layer is less than 0.1 μm, the adhesive strength is reduced, and when the copper foil with a carrier with the resin is laminated on the base material provided with the inner layer material without interposing the prepreg material, the circuit of the inner layer material It may be difficult to ensure interlayer insulation between the two. On the other hand, if the thickness of the resin layer is greater than 120 μm, it is difficult to form a resin layer having a target thickness in a single coating process, which may be economically disadvantageous because of extra material costs and man-hours.
When the copper foil with a carrier having a resin layer is used for producing an extremely thin multilayer printed wiring board, the thickness of the resin layer is 0.1 μm to 5 μm, more preferably 0.5 μm to 5 μm, More preferably, the thickness is 1 μm to 5 μm in order to reduce the thickness of the multilayer printed wiring board.
When the resin layer contains a dielectric, the thickness of the resin layer is preferably 0.1 to 50 μm, more preferably 0.5 μm to 25 μm, and more preferably 1.0 μm to 15 μm. preferable.
The total resin layer thickness of the cured resin layer and the semi-cured resin layer is preferably 0.1 μm to 120 μm, preferably 5 μm to 120 μm, preferably 10 μm to 120 μm, and 10 μm to 60 μm. Are more preferred. The thickness of the cured resin layer is preferably 2 μm to 30 μm, preferably 3 μm to 30 μm, and more preferably 5 to 20 μm. The thickness of the semi-cured resin layer is preferably 3 μm to 55 μm, more preferably 7 μm to 55 μm, and even more preferably 15 to 115 μm. If the total resin layer thickness exceeds 120 μm, it may be difficult to produce a thin multilayer printed wiring board. If the total resin layer thickness is less than 5 μm, it is easy to form a thin multilayer printed wiring board, but an insulating layer between inner layer circuits This is because the resin layer may become too thin and the insulation between the circuits of the inner layer tends to become unstable. Moreover, when the cured resin layer thickness is less than 2 μm, it may be necessary to consider the surface roughness of the roughened copper foil surface. Conversely, if the cured resin layer thickness exceeds 20 μm, the effect of the cured resin layer may not be particularly improved, and the total insulating layer thickness becomes thick.

When the thickness of the resin layer is 0.1 μm to 5 μm, in order to improve the adhesion between the resin layer and the copper foil with carrier, a heat-resistant layer and / or a rust-proof layer is formed on the ultrathin copper layer. After providing the chromate treatment layer and / or the silane coupling treatment layer, it is preferable to form a resin layer on the heat-resistant layer, rust prevention layer, chromate treatment layer or silane coupling treatment layer.
In addition, the thickness of the above-mentioned resin layer says the average value of the thickness measured by cross-sectional observation in arbitrary 10 points | pieces.

Furthermore, as another product form of this copper foil with a carrier with a resin, on the ultra-thin copper layer, or on the heat-resistant layer, rust-preventing layer, chromate-treated layer, or silane coupling-treated layer After coating with a resin layer and making it into a semi-cured state, the carrier can then be peeled off and manufactured in the form of a copper foil with resin without the carrier.

<6. Copper foil with carrier, printed circuit board, printed wiring board>
The copper foil with a carrier which has a copper foil carrier, an intermediate | middle layer, and an ultra-thin copper layer in this order through the process mentioned above is manufactured. The method of using the copper foil with carrier itself is well known to those skilled in the art. For example, the surface of the ultra-thin copper layer is made of paper base phenol resin, paper base epoxy resin, synthetic fiber cloth base epoxy resin, glass cloth / paper composite. A carrier is peeled off after being bonded to an insulating substrate such as a base epoxy resin, a glass cloth / glass nonwoven fabric composite base epoxy resin and a glass cloth base epoxy resin, a polyester film, a polyimide film, etc. In the case of the carrier-attached copper foil according to the present invention, the peeled portion is mainly the interface between the intermediate layer and the ultrathin copper layer. Subsequently, the ultrathin copper layer adhered to the insulating substrate is etched into the intended conductor pattern, and finally a printed wiring board or printed circuit board can be manufactured. As a printed wiring board manufactured using the copper foil with a carrier of the present invention, those in known forms can be widely used. For example, a conductor pattern is printed on an insulating substrate in order to electrically connect each component. A substrate in which the wiring formed by the above is provided on an insulating substrate or the like based on circuit design. Moreover, as a printed circuit board manufactured using the copper foil with a carrier of this invention, the thing of a well-known form can be used widely, for example, it is comprised with the said printed wiring, the various components mounted in a board | substrate, etc. A substrate in which a circuit is provided on an insulating substrate or the like can be given.

Below, some examples of the manufacturing process of the printed wiring board using the copper foil with a carrier according to the present invention are shown.

In one embodiment of a method for producing a printed wiring board according to the present invention, a step of preparing a copper foil with a carrier and an insulating substrate according to the present invention, a step of laminating the copper foil with a carrier and an insulating substrate, and with the carrier After laminating the copper foil and the insulating substrate so that the ultrathin copper layer side faces the insulating substrate, a copper-clad laminate is formed through a step of peeling the carrier of the copper foil with carrier, and then a semi-additive method, a modified semi-conductor A step of forming a circuit by any one of an additive method, a partial additive method, and a subtractive method. It is also possible for the insulating substrate to contain an inner layer circuit.

In the present invention, the semi-additive method refers to a method in which a thin electroless plating is performed on an insulating substrate or a copper foil seed layer, a pattern is formed, and then a conductive pattern is formed using electroplating and etching.

Therefore, in one embodiment of a method for producing a printed wiring board according to the present invention using a semi-additive method, a step of preparing a copper foil with a carrier and an insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
A step of peeling the carrier of the copper foil with carrier after laminating the copper foil with carrier and the insulating substrate;
Removing all of the ultrathin copper layer exposed by peeling the carrier by a method such as etching or plasma using a corrosive solution such as acid,
Providing a through hole or / and a blind via in the resin exposed by removing the ultrathin copper layer by etching;
Performing a desmear process on the region including the through hole or / and the blind via,
Providing an electroless plating layer for the region including the resin and the through hole or / and the blind via;
Providing a plating resist on the electroless plating layer;
Exposing the plating resist, and then removing the plating resist in a region where a circuit is formed;
Providing an electrolytic plating layer in a region where the circuit from which the plating resist has been removed is formed;
Removing the plating resist;
Removing the electroless plating layer in a region other than the region where the circuit is formed by flash etching or the like;
including.

In another embodiment of the method for producing a printed wiring board according to the present invention using a semi-additive method, a step of preparing a copper foil with a carrier and an insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
A step of peeling the carrier of the copper foil with carrier after laminating the copper foil with carrier and the insulating substrate;
Removing all of the ultrathin copper layer exposed by peeling the carrier by a method such as etching or plasma using a corrosive solution such as acid,
Providing an electroless plating layer on the surface of the resin exposed by removing the ultrathin copper layer by etching;
Providing a plating resist on the electroless plating layer;
Exposing the plating resist, and then removing the plating resist in a region where a circuit is formed;
Providing an electrolytic plating layer in a region where the circuit from which the plating resist has been removed is formed;
Removing the plating resist;
Removing the electroless plating layer and the ultrathin copper layer in a region other than the region where the circuit is formed by flash etching or the like;
including.

In the present invention, the modified semi-additive method is a method in which a metal foil is laminated on an insulating layer, a non-circuit forming portion is protected by a plating resist, and the copper is thickened in the circuit forming portion by electrolytic plating, and then the resist is removed. Then, a method of forming a circuit on the insulating layer by removing the metal foil other than the circuit forming portion by (flash) etching is indicated.

Therefore, in one embodiment of the method for producing a printed wiring board according to the present invention using the modified semi-additive method, the step of preparing the copper foil with carrier and the insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
A step of peeling the carrier of the copper foil with carrier after laminating the copper foil with carrier and the insulating substrate;
Providing a through hole or / and a blind via on the insulating substrate and the ultrathin copper layer exposed by peeling the carrier;
Performing a desmear process on the region including the through hole or / and the blind via,
Providing an electroless plating layer for the region including the through hole or / and the blind via;
Providing a plating resist on the surface of the ultrathin copper layer exposed by peeling the carrier,
Forming a circuit by electrolytic plating after providing the plating resist;
Removing the plating resist;
Removing the ultra-thin copper layer exposed by removing the plating resist by flash etching;
including.

In another embodiment of the method for producing a printed wiring board according to the present invention using the modified semi-additive method, the step of preparing the carrier-attached copper foil and the insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
A step of peeling the carrier of the copper foil with carrier after laminating the copper foil with carrier and the insulating substrate;
Providing a plating resist on the exposed ultrathin copper layer by peeling off the carrier;
Exposing the plating resist, and then removing the plating resist in a region where a circuit is formed;
Providing an electrolytic plating layer in a region where the circuit from which the plating resist has been removed is formed;
Removing the plating resist;
Removing the electroless plating layer and the ultrathin copper layer in a region other than the region where the circuit is formed by flash etching or the like;
including.

In the present invention, the partial additive method means that a catalyst circuit is formed on a substrate provided with a conductor layer, and if necessary, a substrate provided with holes for through holes or via holes, and etched to form a conductor circuit. Then, after providing a solder resist or a plating resist as necessary, it refers to a method of manufacturing a printed wiring board by thickening through holes, via holes, etc. on the conductor circuit by electroless plating.

Therefore, in one embodiment of the method for producing a printed wiring board according to the present invention using a partly additive method, a step of preparing the copper foil with carrier and the insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
A step of peeling the carrier of the copper foil with carrier after laminating the copper foil with carrier and the insulating substrate;
Providing a through hole or / and a blind via on the insulating substrate and the ultrathin copper layer exposed by peeling the carrier;
Performing a desmear process on the region including the through hole or / and the blind via,
Applying catalyst nuclei to the region containing the through-holes and / or blind vias;
Providing an etching resist on the surface of the ultrathin copper layer exposed by peeling the carrier,
Exposing the etching resist to form a circuit pattern;
Removing the ultrathin copper layer and the catalyst nucleus by a method such as etching or plasma using a corrosive solution such as an acid to form a circuit;
Removing the etching resist;
A step of providing a solder resist or a plating resist on the surface of the insulating substrate exposed by removing the ultrathin copper layer and the catalyst core by a method such as etching or plasma using a corrosive solution such as an acid;
Providing an electroless plating layer in a region where the solder resist or plating resist is not provided,
including.

In the present invention, the subtractive method refers to a method of selectively removing unnecessary portions of the copper foil on the copper clad laminate by etching or the like to form a conductor pattern.

Therefore, in one embodiment of the method for producing a printed wiring board according to the present invention using a subtractive method, a step of preparing the carrier-attached copper foil and the insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
A step of peeling the carrier of the copper foil with carrier after laminating the copper foil with carrier and the insulating substrate;
Providing a through hole or / and a blind via on the insulating substrate and the ultrathin copper layer exposed by peeling the carrier;
Performing a desmear process on the region including the through hole or / and the blind via,
Providing an electroless plating layer for the region including the through hole or / and the blind via;
Providing an electroplating layer on the surface of the electroless plating layer;
A step of providing an etching resist on the surface of the electrolytic plating layer or / and the ultrathin copper layer;
Exposing the etching resist to form a circuit pattern;
Removing the ultrathin copper layer and the electroless plating layer and the electrolytic plating layer by a method such as etching or plasma using a corrosive solution such as an acid to form a circuit;
Removing the etching resist;
including.

In another embodiment of the method for producing a printed wiring board according to the present invention using a subtractive method, a step of preparing the carrier-attached copper foil and the insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
A step of peeling the carrier of the copper foil with carrier after laminating the copper foil with carrier and the insulating substrate;
Providing a through hole or / and a blind via on the insulating substrate and the ultrathin copper layer exposed by peeling the carrier;
Performing a desmear process on the region including the through hole or / and the blind via,
Providing an electroless plating layer for the region including the through hole or / and the blind via;
Forming a mask on the surface of the electroless plating layer;
Providing an electroplating layer on the surface of the electroless plating layer on which no mask is formed;
A step of providing an etching resist on the surface of the electrolytic plating layer or / and the ultrathin copper layer;
Exposing the etching resist to form a circuit pattern;
Removing the ultra-thin copper layer and the electroless plating layer by a method such as etching or plasma using a corrosive solution such as an acid to form a circuit;
Removing the etching resist;
including.

¡Through holes and / or blind vias and subsequent desmear steps may not be performed.

Here, the specific example of the manufacturing method of the printed wiring board using the copper foil with a carrier of this invention is demonstrated in detail using drawing. Here, the carrier-attached copper foil having an ultrathin copper layer on which a roughened layer is formed will be described as an example. However, the present invention is not limited thereto, and the carrier has an ultrathin copper layer on which a roughened layer is not formed. The following method for producing a printed wiring board can be similarly performed using an attached copper foil.
First, as shown in FIG. 1-A, a copper foil with a carrier (first layer) having an ultrathin copper layer having a roughened layer formed on the surface is prepared.
Next, as shown in FIG. 1-B, a resist is applied on the roughened layer of the ultrathin copper layer, exposed and developed, and etched into a predetermined shape.
Next, as shown in FIG. 1-C, after circuit plating is formed, the resist is removed to form circuit plating having a predetermined shape.
Next, as shown in FIG. 2-D, an embedded resin is provided on the ultrathin copper layer so as to cover the circuit plating (so that the circuit plating is buried), and then the resin layer is laminated, and then another carrier is attached. A copper foil (second layer) is bonded from the ultrathin copper layer side.
Next, as shown in FIG. 2-E, the carrier is peeled off from the second-layer copper foil with carrier.
Next, as shown in FIG. 2-F, laser drilling is performed at a predetermined position of the resin layer to expose the circuit plating and form a blind via.
Next, as shown in FIG. 3G, copper is embedded in the blind via to form a via fill.
Next, as shown in FIG. 3H, circuit plating is formed on the via fill as shown in FIGS. 1B and 1C.
Next, as shown in FIG. 3I, the carrier is peeled off from the first layer of copper foil with carrier.
Next, as shown in FIG. 4J, the ultrathin copper layers on both surfaces are removed by flash etching, and the surface of the circuit plating in the resin layer is exposed.
Next, as shown in FIG. 4K, bumps are formed on the circuit plating in the resin layer, and copper pillars are formed on the solder. Thus, the printed wiring board using the copper foil with a carrier of this invention is produced.

The other carrier-attached copper foil (second layer) may be the carrier-attached copper foil of the present invention, a conventional carrier-attached copper foil, or a normal copper foil. Further, one or more circuits may be formed on the second-layer circuit shown in FIG. 3H, and these circuits may be formed using a semi-additive method, a subtractive method, a partial additive method, or a modified semi-conductor method. You may carry out by any method of an additive method.

The copper foil with a carrier according to the present invention is preferably controlled so that the color difference on the surface of the ultrathin copper layer satisfies the following (1). In the present invention, the “color difference on the surface of the ultrathin copper layer” means the color difference on the surface of the ultrathin copper layer, or the color difference on the surface of the surface treatment layer when various surface treatments such as roughening treatment are applied. . That is, in the copper foil with a carrier according to the present invention, the color difference of the surface of the ultrathin copper layer, the roughening treatment layer, the heat resistance layer, the rust prevention layer, the chromate treatment layer or the silane coupling layer satisfies the following (1). It is preferably controlled.
(1) The color difference ΔE * ab based on JIS Z8730 on the surface of the ultrathin copper layer, the roughened layer, the heat-resistant layer, the rust-proof layer, the chromate-treated layer or the silane coupling-treated layer is 45 or more.

Here, the color differences ΔL, Δa, and Δb are respectively measured with a color difference meter, and are shown using the L * a * b color system based on JIS Z8730, taking into account black / white / red / green / yellow / blue. It is a comprehensive index and is expressed as ΔL: black and white, Δa: reddish green, Δb: yellow blue. ΔE * ab is expressed by the following formula using these color differences.

The above-described color difference can be adjusted by increasing the current density when forming the ultrathin copper layer, decreasing the copper concentration in the plating solution, and increasing the linear flow rate of the plating solution.
Moreover, the above-mentioned color difference can also be adjusted by performing a roughening process on the surface of an ultra-thin copper layer and providing a roughening process layer. In the case of providing the roughened layer, the current density is higher than that of the prior art (for example, 40 to 60 A) using an electrolytic solution containing copper and one or more elements selected from the group consisting of nickel, cobalt, tungsten, and molybdenum. / Dm2), and can be adjusted by shortening the processing time (for example, 0.1 to 1.3 seconds). When a roughening layer is not provided on the surface of the ultrathin copper layer, use a plating bath in which the concentration of Ni is twice or more that of other elements, and use an ultrathin copper layer, heat resistant layer, rust preventive layer or chromate. Ni alloy plating (for example, Ni—W alloy plating, Ni—Co—P alloy plating, Ni—Zn alloy plating) is applied to the surface of the treatment layer or the silane coupling treatment layer at a lower current density (0.1 to 1.. 3A / dm ² ), and the processing time can be set long (20 to 40 seconds).

When the color difference ΔE * ab based on JIS Z8730 on the ultrathin copper layer surface is 45 or more, for example, when forming a circuit on the ultrathin copper layer surface of the copper foil with carrier, the contrast between the ultrathin copper layer and the circuit As a result, visibility is improved and circuit alignment can be performed with high accuracy. The color difference ΔE * ab based on JIS Z8730 on the surface of the ultrathin copper layer is preferably 50 or more, more preferably 55 or more, and even more preferably 60 or more.

When the color difference on the surface of the ultra-thin copper layer, roughened layer, heat-resistant layer, rust-proof layer, chromate-treated layer or silane coupling layer is controlled as described above, the contrast with the circuit plating becomes clear. , Visibility becomes good. Accordingly, in the manufacturing process of the printed wiring board as described above, for example, as shown in FIG. 1-C, the circuit plating can be accurately formed at a predetermined position. Further, according to the printed wiring board manufacturing method as described above, since the circuit plating is embedded in the resin layer, for example, removal of the ultrathin copper layer by flash etching as shown in FIG. At this time, the circuit plating is protected by the resin layer and the shape thereof is maintained, thereby facilitating the formation of a fine circuit. Further, since the circuit plating is protected by the resin layer, the migration resistance is improved, and the continuity of the circuit wiring is satisfactorily suppressed. For this reason, formation of a fine circuit becomes easy. Also, as shown in FIGS. 4-J and 4-K, when the ultrathin copper layer is removed by flash etching, the exposed surface of the circuit plating has a shape recessed from the resin layer, so that bumps are formed on the circuit plating. In addition, copper pillars can be easily formed thereon, and the production efficiency is improved.

A known resin or prepreg can be used as the embedding resin (resin). For example, a prepreg that is a glass cloth impregnated with BT (bismaleimide triazine) resin or BT resin, an ABF film or ABF manufactured by Ajinomoto Fine Techno Co., Ltd. can be used. Moreover, the resin layer and / or resin and / or prepreg as described in this specification can be used for the embedding resin (resin).

Further, the carrier-attached copper foil used in the first layer may have a substrate or a resin layer on the surface of the carrier-attached copper foil. By having the said board | substrate or resin layer, since the copper foil with a carrier used for the first layer is supported and it becomes difficult to wrinkle, there exists an advantage that productivity improves. The substrate or the resin layer is not particularly limited as long as it has an effect of supporting the carrier-attached copper foil used in the first layer, and any substrate or resin layer can be used. For example, the carrier, prepreg, resin layer or known carrier, prepreg, resin layer, metal plate, metal foil, inorganic compound plate, inorganic compound foil, organic compound plate described herein as the substrate or resin layer, Organic compound foils can be used.

The copper foil with a carrier of the present invention has a maximum nickel concentration when a 50 to 1000 nm long STEM line analysis is performed in a range including all of them in this order from the cross section of the copper foil carrier / intermediate layer / ultra thin copper layer. Is 50 to 95% by mass, and molybdenum or cobalt is present at a maximum of 1 to 50% by mass on the ultrathin copper layer side from nickel.
As described above, the copper foil with a carrier of the present invention is obtained by performing elemental analysis on the cross section of the copper foil carrier / intermediate layer / ultra thin copper layer, carrier copper / nickel layer / molybdenum or cobalt or molybdenum-cobalt alloy layer / ultra thin copper layer. It has a structure. At this time, since nickel and copper are easy to dissolve, when they are in contact with each other, the adhesive force is increased due to mutual diffusion and it is difficult to peel off. On the other hand, molybdenum or cobalt and copper are difficult to dissolve and mutual diffusion is difficult. Since it does not easily occur, the adhesive force is weak at the interface between the molybdenum or cobalt or molybdenum-cobalt alloy layer and copper. By changing the concentration of nickel and molybdenum or cobalt, the peel strength can be controlled by controlling the copper concentration in the intermediate layer. In addition, if the molybdenum or cobalt or molybdenum-cobalt alloy layer is present at the boundary between the carrier and the nickel layer, the intermediate layer is also peeled off at the time of peeling of the ultrathin copper layer, that is, peeling is performed between the carrier and the intermediate layer. Since it will occur, it is not preferable. This situation occurs not only when a molybdenum or cobalt or molybdenum-cobalt alloy layer is provided at the interface with the carrier, but also when a molybdenum or cobalt or molybdenum-cobalt alloy layer is provided at the interface with the ultrathin copper layer. This can occur if the amount of molybdenum or cobalt is too high. This is thought to be because molybdenum or cobalt and copper are difficult to dissolve and interdiffusion is unlikely to occur, so the adhesive force at the interface between molybdenum or cobalt or molybdenum-cobalt alloy layer and copper is weak and easy to peel. It is done. Further, when the amount of nickel in the intermediate layer is insufficient, there is only a small amount of molybdenum or cobalt between the carrier and the ultrathin copper layer, so that they are in close contact and difficult to peel off.

The copper foil with a carrier of the present invention has a copper foil carrier / intermediate layer / layer when an insulating substrate is thermocompression bonded to the ultrathin copper layer under the conditions of pressure: 20 kgf / cm ² and 220 ° C. × 2 hours. When a 50 to 1000 nm long STEM line analysis is performed from the cross section of the ultrathin copper layer in the range including all of them in this order, the maximum value of the nickel concentration is 50 to 95% by mass and the ultrathin copper layer than nickel On the side, a maximum of 1 to 50% by weight of molybdenum or cobalt may be present.
Thus, even in the copper foil with carrier after thermocompression bonding, the element analysis of the cross section of the copper foil carrier / intermediate layer / ultra thin copper layer shows that the copper foil carrier / nickel layer / molybdenum or cobalt or molybdenum-cobalt alloy layer / electrode It has a thin copper layer structure. At this time, the presence of molybdenum or cobalt or a molybdenum-cobalt alloy layer at the interface between the nickel layer and the ultrathin copper layer suppresses element diffusion between the nickel layer and the ultrathin copper layer during thermocompression bonding of the insulated substrate, and A rapid increase in peel strength due to pressure bonding can be prevented, and a stable peel strength can be maintained.

The copper foil with a carrier of the present invention has a copper foil carrier / intermediate layer / layer when an insulating substrate is thermocompression bonded to the ultrathin copper layer under the conditions of pressure: 20 kgf / cm ² and 220 ° C. × 2 hours. When a 50 to 1000 nm long STEM line analysis is performed from the cross section of the ultrathin copper layer, the minimum copper concentration at the location where nickel, molybdenum and / or cobalt, and copper coexist is 10 to 10 nm. It may be 65% by mass.
According to such a configuration, when the copper foil with a carrier of the present invention is subjected to elemental analysis of the cross section of the copper foil carrier / intermediate layer / ultra thin copper layer after thermocompression bonding, copper exists in the intermediate layer in a certain amount or more. is doing. For this reason, there exists an effect that the fall of the extreme peeling strength after thermocompression-bonding can be prevented.

In the copper foil with a carrier of the present invention, the concentration of cobalt in the molybdenum-cobalt alloy in the intermediate layer may be 20 to 80% by mass.
According to such a configuration, the presence of the cobalt of the intermediate layer in a certain amount or more has the effect of preventing excessive copper diffusion into the intermediate layer and preventing an extreme increase in peel strength. is there.

Hereinafter, the present invention will be described in more detail with reference to examples of the present invention, but the present invention is not limited to these examples.

1. Production of Copper Foil with Carrier As a copper foil carrier, a long electrolytic copper foil having a thickness of 35 μm (JTC made by JX Nippon Mining & Metals) and a rolled copper foil having a thickness of 33 μm (C1100 made by JX Nippon Mining & Metals) Prepared. With respect to the shiny surface of this copper foil, the intermediate layer formation treatment described in Table 1 was performed in the following conditions in order on the carrier surface and the ultrathin copper layer side in a roll-to-roll type continuous line under the following conditions. . Washing and pickling were performed between the processing steps on the carrier surface side and the ultrathin copper layer side.

(Plating conditions)
・ Ni plating Nickel sulfate: 250-500 g / L
Nickel chloride: 35 to 45 g / L
Nickel acetate: 10-20g / L
Trisodium citrate: 15-30 g / L
Brightener: Saccharin, butynediol, etc. Sodium dodecyl sulfate: 30 to 100 ppm
pH: 4-6
Bath temperature: 50-70 ° C
Current density: 3 to 15 A / dm ²

・ Cobalt plating Cobalt sulfate: 200 to 300 g / L
Boric acid: 20-50 g / L
pH: 2-5
Liquid temperature: 10-70 ° C
Current density: 0.5 to 20 A / dm ²
・ Molybdenum-cobalt alloy plating Cobalt sulfate: 10 to 200 g / L
Sodium molybdate: 5 to 200 g / L
Sodium citrate: 2 to 240 g / L
pH: 2-5
Liquid temperature: 10-70 ° C
Current density: 0.5 to 10 A / dm ²

(Sputtering conditions)
Since the molybdenum layer cannot be formed by electroplating, it was produced with a roll-to-roll type sputtering apparatus. In that case, the thin oxide film on the copper foil surface may be removed by an ion gun (LIS), and then the coating layer may be formed. The thicknesses of the Ni layer and the Mo layer were changed by adjusting the sputtering power.
・ Equipment: Roll-to-roll sputtering equipment (Shinko Seiki Co., Ltd.)
・ Achieving vacuum: 1.0 × 10 ⁻⁵ Pa
・ Sputtering pressure: 0.25 Pa
・ Conveying speed: 15m / min
・ Ion gun power: 225W
・ Sputtering power: 200-3000W
·target:
For Ni layer = Ni (purity 3N)
For Mo layer = Mo (purity 3N)
Film formation rate: About 0.2 μm of film was formed for each target for a fixed time, the thickness was measured with a three-dimensional measuring device, and the sputtering rate per unit time was calculated.

Subsequently, on a continuous roll-to-roll type plating line, an ultrathin copper layer having a thickness of 2 to 5 μm was formed on the intermediate layer by electroplating under the following conditions to produce a copper foil with a carrier. .
・ Ultra-thin copper layer Copper concentration: 30-120 g / L
H ₂ SO ₄ concentration: 20 to 120 g / L
Electrolyte temperature: 20-80 ° C
Current density: 10 to 100 A / dm ²

In Examples 1, 5, and 7, the surface of the ultrathin copper layer was subjected to the following roughening treatment, rust prevention treatment, chromate treatment, and silane coupling treatment in this order.
・ Roughening Cu: 10 to 20 g / L
Co: 1-10g / L
Ni: 1-10g / L
pH: 1 to 4
Temperature: 40-50 ° C
Current density Dk: 20 to 30 A / dm ²
Time: 1 to 5 seconds Cu adhesion amount: 15 to 40 mg / dm ²
Co adhesion amount: 100 to 3000 μg / dm ²
Ni adhesion amount: 100 to 1000 μg / dm ²
・ Rust prevention treatment Zn: 0-20g / L
Ni: 0-5g / L
pH: 3.5
Temperature: 40 ° C
Current density Dk: 0 to 1.7 A / dm ²
Time: 1 second Zn deposition amount: 5 to 250 μg / dm ²
Ni adhesion amount: 5 to 300 μg / dm ²
・ Chromate treatment K ₂ Cr ₂ O ₇
(Na ₂ Cr ₂ O ₇ or CrO ₃ ): 2 to 10 g / L
NaOH or KOH: 10-50g / L
ZnO or ZnSO ₄ 7H ₂ O: 0.05 to 10 g / L
pH: 7-13
Bath temperature: 20-80 ° C
Current density 0.05-5A / dm ²
Time: 5 to 30 seconds Cr adhesion amount: 10 to 150 μg / dm ²
・ Silane coupling treatment Vinyltriethoxysilane aqueous solution (vinyltriethoxysilane concentration: 0.1 to 1.4 wt%)
pH: 4-5
Time: 5-30 seconds

2. Various evaluations of copper foil with carrier Various evaluations were carried out by the following methods for the copper foil with carrier obtained as described above. The results are shown in Table 1.

<Measurement of adhesion amount>
The amount of nickel deposited was measured by ICP emission analysis using an ICP emission spectrophotometer (model: SPS3100) manufactured by SII after dissolving the sample with nitric acid having a concentration of 20% by mass. Dissolve in a mixed solution of hydrochloric acid (nitric acid concentration: 20% by mass, hydrochloric acid concentration: 12% by mass) and perform quantitative analysis by atomic absorption spectrometry using an atomic absorption spectrophotometer (model: AA240FS) manufactured by VARIAN. Was measured.

<Evaluation by STEM>
The measurement conditions when the element distribution in the cross section of the copper foil with a carrier is observed by STEM are shown below.
・ Device: STEM (Hitachi, Ltd., model HD-2000 STEM)
・ Acceleration voltage: 200kV
・ Magnification: 100,000 to 1,000,000 times ・ Viewing field: 1500 nm × 1500 nm to 160 nm × 160 nm
Elemental concentration line analysis was performed for a length of 50 to 1000 nm through the carrier / intermediate layer / ultra thin copper layer. Carbon was excluded from the detected elements, and the concentration (% by mass) of each element was analyzed.
STEM evaluation is also applied to the case after bonding the ultrathin copper layer side of the copper foil with a carrier on the insulating substrate and performing pressure bonding in the atmosphere at 20 kgf / cm ² and 220 ° C. × 2 hours. went.
In addition, the evaluation by the above-mentioned STEM was performed in a long side direction of each sample sheet at a total of three locations, one in each region within 50 mm from both ends and one in a 50 mm × 50 mm region at the center. The three measurement locations are shown in FIG. In addition, the values obtained by arithmetically averaging the maximum value of nickel concentration, the maximum value of molybdenum concentration, and the maximum value of cobalt concentration at the three locations were set as the maximum value of Kel concentration, the maximum value of molybdenum concentration, and the maximum value of cobalt concentration, respectively. .
When the sample size is small, the above-mentioned region within 50 mm from both ends and the 50 mm × 50 mm region at the center may overlap.

<Pinhole>
The number of pinholes was visually measured using a consumer photographic backlight as a light source. The number of pinholes is determined by bonding the ultrathin copper layer side of the copper foil with carrier on the insulating substrate and performing pressure bonding under the conditions of 20 kgf / cm ² and 220 ° C. × 2 hours in the atmosphere. It peeled and measured by making a backlight permeate | transmit from the insulating substrate side.

<Peel strength>
After bonding the ultra-thin copper layer side of the copper foil with carrier on the insulating substrate and performing pressure bonding under the conditions of 20 kgf / cm ² and 220 ° C. × 2 hours in the atmosphere, the peel strength is measured with a load cell. The foil carrier side was pulled and measured according to the 90 ° peeling method (JIS C 6471 8.1). Further, the peel strength of the carrier-attached copper foil before being bonded onto the insulating substrate was also measured.

(Evaluation results)
In Examples 1 to 7, in the intermediate layer, the adhesion amount of nickel is 1000 to 40000 μg / dm ^{2. When} molybdenum is included, the adhesion amount of molybdenum is 50 to 1000 μg / dm ² . 50 to 1000 μg / dm ² , and the maximum nickel concentration when a 50 to 1000 nm long STEM line analysis was performed in the range including all of them in this order from the cross section of the copper foil carrier / intermediate layer / ultra thin copper layer Is 50 to 95% by mass, and molybdenum or cobalt is present at the maximum value of 1 to 50% by mass on the ultrathin copper layer side from nickel. Showed good peel strength.
In Comparative Examples 1 and 2, since nickel, cobalt, and molybdenum were not present, peeling was not possible before and after pressing.
In Comparative Example 3, since molybdenum and cobalt were not present, peeling was not possible after pressing.
In Comparative Example 4, molybdenum and cobalt were not present, and the amount of nickel deposited was small, so that peeling was not possible before and after pressing.
In Comparative Examples 5 and 7, since the amount of cobalt deposited was too large, pinholes occurred frequently and the peel strength was too low.
In Comparative Example 6, since the amount of molybdenum deposited was too large, pinholes occurred frequently and the peel strength was too low.
In Comparative Example 8, the concentration of molybdenum and cobalt measured by the STEM line analysis of the cross section was low, so that peeling became impossible after pressing.
In FIG. 5, the density | concentration profile of the cross section after the board | substrate pressure bonding which concerns on Example 5 is shown. FIG. 6 shows a concentration profile of a cross section after the substrate is crimped according to Comparative Example 3. 5 and 6, the left side of the graph is the copper foil carrier side, and the right side is the ultrathin copper layer side.

Claims

A copper foil with a carrier having a copper foil carrier, an intermediate layer, and an ultrathin copper layer in this order,
The intermediate layer is configured by laminating nickel and molybdenum or cobalt or a molybdenum-cobalt alloy in this order from the copper foil carrier side.
In the intermediate layer, the adhesion amount of nickel is 1000 to 40000 μg / dm 2 , when molybdenum is included, the adhesion amount of molybdenum is 50 to 1000 μg / dm 2 , and when it includes cobalt, the adhesion amount of cobalt is 50 to 1000 μg / dm 2. And
When a 50 to 1000 nm long STEM line analysis is performed in a range including all of the copper foil carrier / intermediate layer / ultra thin copper layer in this order, the maximum nickel concentration is 50 to 95% by mass. And a copper foil with a carrier in which molybdenum or cobalt is present at a maximum value of 1 to 50% by mass on the ultrathin copper layer side from nickel.
When the insulating substrate is thermocompression bonded to the ultrathin copper layer in the atmosphere under the conditions of pressure: 20 kgf / cm 2 and 220 ° C. × 2 hours,
When a 50 to 1000 nm long STEM line analysis is performed in a range including all of the copper foil carrier / intermediate layer / ultra thin copper layer in this order, the maximum nickel concentration is 50 to 95% by mass. The copper foil with a carrier according to claim 1, wherein a maximum of 1 to 50 mass% of molybdenum or cobalt is present on the ultrathin copper layer side of nickel.
When the insulating substrate is thermocompression bonded to the ultrathin copper layer in the atmosphere under the conditions of pressure: 20 kgf / cm 2 and 220 ° C. × 2 hours,
Locations where nickel, molybdenum and / or cobalt, and copper coexist when a 50 to 1000 nm long STEM line analysis is performed in a range including all of these from the cross section of the copper foil carrier / intermediate layer / ultra thin copper layer The copper foil with a carrier according to claim 1 or 2, wherein the minimum copper concentration is 10 to 65 mass%.
The copper foil with a carrier according to any one of claims 1 to 3, wherein a concentration of cobalt in the molybdenum-cobalt alloy in the intermediate layer is 20 to 80% by mass.
The carrier-attached copper foil according to any one of claims 1 to 4, wherein the copper foil carrier is formed of an electrolytic copper foil or a rolled copper foil.
The copper foil with a carrier according to any one of claims 1 to 5, which has a roughened layer on the surface of the ultrathin copper layer.
The roughening treatment layer is a layer made of any single element selected from the group consisting of copper, nickel, cobalt, phosphorus, tungsten, arsenic, molybdenum, chromium, and zinc, or an alloy containing at least one kind. Item 7. A copper foil with a carrier according to Item 6.
The copper with a carrier according to claim 6 or 7 which has one or more sorts of layers chosen from the group which consists of a heat-resistant layer, a rust prevention layer, a chromate treatment layer, and a silane coupling treatment layer on the surface of said roughening treatment layer. Foil.
The surface of the ultrathin copper layer has at least one layer selected from the group consisting of a heat-resistant layer, a rust-proof layer, a chromate treatment layer, and a silane coupling treatment layer. The copper foil with a carrier of description.
The carrier-attached copper foil according to any one of claims 1 to 5, further comprising a resin layer on the ultrathin copper layer.
The copper foil with a carrier according to any one of claims 6 to 8, further comprising a resin layer on the roughening treatment layer.
The copper foil with a carrier according to claim 8 or 9, wherein a resin layer is provided on one or more layers selected from the group consisting of the heat-resistant layer, the rust prevention layer, the chromate treatment layer and the silane coupling treatment layer.
The copper foil with a carrier according to any one of claims 10 to 12, wherein the resin layer contains a dielectric.
A printed wiring board manufactured using the carrier-attached copper foil according to any one of claims 1 to 13.
A printed circuit board manufactured using the carrier-attached copper foil according to any one of claims 1 to 13.
A copper-clad laminate produced using the carrier-attached copper foil according to any one of claims 1 to 13.
Forming a nickel layer on the copper foil carrier by dry plating or wet plating, and forming an intermediate layer by forming a molybdenum layer, a cobalt layer, or a molybdenum-cobalt alloy layer on the nickel layer; and The method for producing a copper foil with a carrier according to any one of claims 1 to 13, comprising a step of forming an ultrathin copper layer on the intermediate layer by electroplating.
The manufacturing method of the copper foil with a carrier of Claim 17 including the process of forming a roughening process layer on the said ultra-thin copper layer.
Preparing a carrier-attached copper foil according to any one of claims 1 to 13 and an insulating substrate;
Laminating the copper foil with carrier and an insulating substrate;
After laminating the carrier-attached copper foil and the insulating substrate, a copper-clad laminate is formed through a step of peeling the carrier of the carrier-attached copper foil,
Then, the manufacturing method of a printed wiring board including the process of forming a circuit by any method of a semi-additive method, a subtractive method, a partly additive method, or a modified semi-additive method.
Forming a circuit on the ultrathin copper layer side surface of the carrier-attached copper foil according to any one of claims 1 to 13,
Forming a resin layer on the ultrathin copper layer side surface of the carrier-attached copper foil so that the circuit is buried;
Forming a circuit on the resin layer;
Forming the circuit on the resin layer, and then peeling the carrier; and
After the carrier is peeled off, the printed wiring board includes a step of exposing the circuit embedded in the resin layer formed on the surface of the ultrathin copper layer by removing the ultrathin copper layer Method.
The step of forming a circuit on the resin layer includes attaching another carrier-attached copper foil on the resin layer from the ultrathin copper layer side, and using the carrier-attached copper foil attached to the resin layer to form the circuit. The method for manufacturing a printed wiring board according to claim 20, wherein the method is a forming step.
The method for producing a printed wiring board according to claim 21, wherein the carrier-attached copper foil to be bonded onto the resin layer is the carrier-attached copper foil according to any one of claims 1 to 13.
The print according to any one of claims 20 to 22, wherein the step of forming a circuit on the resin layer is performed by any one of a semi-additive method, a subtractive method, a partly additive method, and a modified semi-additive method. A method for manufacturing a wiring board.
The method for producing a printed wiring board according to any one of claims 20 to 23, wherein the copper foil with a carrier forming a circuit on the surface has a substrate or a resin layer on the surface of the carrier of the copper foil with the carrier.