WO2014079144A1 - 一种化学机械抛光液 - Google Patents
一种化学机械抛光液 Download PDFInfo
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- WO2014079144A1 WO2014079144A1 PCT/CN2013/001374 CN2013001374W WO2014079144A1 WO 2014079144 A1 WO2014079144 A1 WO 2014079144A1 CN 2013001374 W CN2013001374 W CN 2013001374W WO 2014079144 A1 WO2014079144 A1 WO 2014079144A1
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- Prior art keywords
- polishing liquid
- chemical mechanical
- mechanical polishing
- liquid according
- phosphate
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 70
- 239000000126 substance Substances 0.000 title claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 19
- 239000003945 anionic surfactant Substances 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000007788 liquid Substances 0.000 claims description 53
- 239000004094 surface-active agent Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 10
- -1 phosphate ester ethanolamine salt Chemical class 0.000 claims description 7
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 7
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 7
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 claims description 5
- PSZYNBSKGUBXEH-UHFFFAOYSA-M naphthalene-1-sulfonate Chemical compound C1=CC=C2C(S(=O)(=O)[O-])=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-M 0.000 claims description 5
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 150000003013 phosphoric acid derivatives Chemical class 0.000 claims description 5
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 claims description 5
- IEORSVTYLWZQJQ-UHFFFAOYSA-N 2-(2-nonylphenoxy)ethanol Chemical compound CCCCCCCCCC1=CC=CC=C1OCCO IEORSVTYLWZQJQ-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910019142 PO4 Inorganic materials 0.000 claims description 4
- 229920000847 nonoxynol Polymers 0.000 claims description 4
- 239000010452 phosphate Substances 0.000 claims description 4
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims description 3
- ZRIUUUJAJJNDSS-UHFFFAOYSA-N ammonium phosphates Chemical compound [NH4+].[NH4+].[NH4+].[O-]P([O-])([O-])=O ZRIUUUJAJJNDSS-UHFFFAOYSA-N 0.000 claims description 3
- NMDKWAQVRNUKQH-UHFFFAOYSA-N 2-benzylnaphthalene-1-sulfonic acid formaldehyde Chemical compound C=O.C(C1=CC=CC=C1)C1=C(C2=CC=CC=C2C=C1)S(=O)(=O)O NMDKWAQVRNUKQH-UHFFFAOYSA-N 0.000 claims description 2
- WWBXZKQQXUFSED-UHFFFAOYSA-N [Na].O=C.C1=CC=C2C(S(=O)(=O)OC)=CC=CC2=C1 Chemical compound [Na].O=C.C1=CC=C2C(S(=O)(=O)OC)=CC=CC2=C1 WWBXZKQQXUFSED-UHFFFAOYSA-N 0.000 claims description 2
- 239000013543 active substance Substances 0.000 claims description 2
- 230000000844 anti-bacterial effect Effects 0.000 claims description 2
- YXJUEYDETJCBKA-UHFFFAOYSA-N bis(2-hydroxyethyl)azanium;dihydrogen phosphate Chemical compound OP(O)(O)=O.OCCNCCO YXJUEYDETJCBKA-UHFFFAOYSA-N 0.000 claims description 2
- NHFDKKSSQWCEES-UHFFFAOYSA-N dihydrogen phosphate;tris(2-hydroxyethyl)azanium Chemical class OP(O)(O)=O.OCCN(CCO)CCO NHFDKKSSQWCEES-UHFFFAOYSA-N 0.000 claims description 2
- LCRMGUFGEDUSOG-UHFFFAOYSA-N naphthalen-1-ylsulfonyloxymethyl naphthalene-1-sulfonate;sodium Chemical compound [Na].C1=CC=C2C(S(=O)(OCOS(=O)(=O)C=3C4=CC=CC=C4C=CC=3)=O)=CC=CC2=C1 LCRMGUFGEDUSOG-UHFFFAOYSA-N 0.000 claims description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims description 2
- 125000003396 thiol group Chemical class [H]S* 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 125000005233 alkylalcohol group Chemical group 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000003112 inhibitor Substances 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 13
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 11
- 238000002955 isolation Methods 0.000 abstract description 10
- 238000012937 correction Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract 1
- 238000000034 method Methods 0.000 description 7
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- 229910000420 cerium oxide Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 3
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 3
- JASHTKAXQWIZGF-UHFFFAOYSA-N 2-benzylnaphthalene Chemical compound C=1C=C2C=CC=CC2=CC=1CC1=CC=CC=C1 JASHTKAXQWIZGF-UHFFFAOYSA-N 0.000 description 2
- QIMMUPPBPVKWKM-UHFFFAOYSA-N 2-methylnaphthalene Chemical compound C1=CC=CC2=CC(C)=CC=C21 QIMMUPPBPVKWKM-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- WQDUMFSSJAZKTM-UHFFFAOYSA-N Sodium methoxide Chemical compound [Na+].[O-]C WQDUMFSSJAZKTM-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000013517 stratification Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229940121375 antifungal agent Drugs 0.000 description 1
- 239000003429 antifungal agent Substances 0.000 description 1
- WNFHIHSFTZXSPT-UHFFFAOYSA-M azanium potassium dihydrogen phosphate chloride Chemical compound [NH4+].[Cl-].[K+].OP(O)([O-])=O WNFHIHSFTZXSPT-UHFFFAOYSA-M 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001767 cationic compounds Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 150000002085 enols Chemical class 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- ISXSFOPKZQZDAO-UHFFFAOYSA-N formaldehyde;sodium Chemical compound [Na].O=C ISXSFOPKZQZDAO-UHFFFAOYSA-N 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Definitions
- the present invention relates to a chemical mechanical polishing liquid, and more particularly to a polishing liquid for a shallow trench isolation process. Background technique
- COMS chips are typically fabricated by integrating hundreds of millions of active devices (including NMOS and PMOS) on silicon substrate materials, and then designing various circuits to implement complex logic functions and analog functions. To ensure electrical isolation between different devices, insulation is used to isolate them. Shallow trench isolation (STI) is an industrial method of forming isolation regions between active devices. The isolation method is to deposit a silicon dioxide layer on the substrate, and then deposit a silicon nitride film, the typical thickness of which is 10-20 nm and 50-1 00 nm, respectively, and then apply the glue. , exposure and development (as shown in Figure 1).
- STI Shallow trench isolation
- steps 5-6 require a CMP planarization process that requires rapid removal of silicon dioxide and stops on the silicon nitride, which requires a higher HDP/SIN selectivity than the polishing solution, usually It should be greater than 10, and the dish-shaped depressions in different density areas can not differ by 200 angstroms, the surface is smooth and clean, and the particle pollutants and defects are less than the requirements of the process.
- CN100339420C discloses a polishing liquid comprising cerium oxide, a zwitterionic compound, a carboxylic acid polymer and a cationic compound, wherein the polishing solution uses a zwitterionic compound to adjust the removal rate of silicon dioxide and silicon nitride by using cerium oxide as an abrasive.
- the polishing liquid is prone to sedimentation stratification, which requires higher requirements for online equipment and increases costs.
- the widely used chip factory is a cerium oxide polishing liquid.
- This type of polishing liquid has a high polishing speed and a relatively high selection of silicon nitride. It is a relatively mature industrial product, but this type of polishing liquid is prone to sedimentation and stratification. The equipment requirements are high, and the price is expensive. In the context of reducing the efficiency of the global chip industry, reducing the cost is also one of the requirements of the polishing liquid. Summary of the invention
- the present invention provides a chemical mechanical polishing liquid which is low in cost and excellent in effect.
- a silica sol is used as an abrasive, an anionic surfactant is used to reduce the removal rate of silicon nitride, and a selection ratio of the process is required, and the silicon-based abrasive further reduces the cost of the slurry. It is an ideal STI polishing solution.
- the polishing liquid provided by the present invention comprises a chemical mechanical polishing liquid characterized in that the polishing liquid comprises a silica abrasive, water and one or more anionic surfactants.
- the silica abrasive has a particle diameter of 20 to 200 nm, preferably 40 to 120 nm.
- the concentration of the silica abrasive is 5 to 40% by weight, preferably 10% to 25% by weight.
- anionic surfactant is a mixture of at least two anionic surfactants, preferably a mixture of two anionic surfactants.
- the anionic surfactant is a mixture of a naphthalenesulfonate surfactant and a phosphate salt surfactant.
- the naphthalene sulfonate surfactant is selected from one or more of sodium methylene dinaphthalene sulfonate, sodium methyl naphthalene sulfonate formaldehyde polycondensate and/or benzyl naphthalene sulfonic acid formaldehyde polycondensate;
- the ester salt surfactant is selected from the group consisting of mercapto alcohol polyoxyethylene ether ( n ) phosphate potassium salt, mercapto alcohol polyoxyethylene ether ( n ) phosphate hinge salt, nonylphenol polyoxyethylene ether ( n ) phosphate Potassium salt, nonylphenol ethoxylate ( n) phosphate ammonium salt, nonylphenol ethoxylate ( ⁇ ) phosphate
- the concentration of the anionic surfactant is from 0.005% to 0.5% by weight, preferably from 0.01% to 0.2% by weight.
- the polishing liquid further contains a bactericidal anti-fungal agent, preferably a quaternary ammonium salt active agent.
- the polishing solution has a pH of 1 to 5, preferably 2 to 3.
- the polishing liquid of the present invention is a polishing liquid using silica sol as an abrasive and cerium oxide as an abrasive. Compared with the stability, the cost is further reduced, and it is an ideal shallow trench isolation layer polishing liquid.
- Figure 1 shows a typical method of forming an isolation region.
- 1 is a photoresist
- 2 is silicon nitride
- 3 is silicon dioxide
- 4 is silicon dioxide.
- the polishing liquid was prepared according to the components of each of the examples and the comparative examples in Table 1 and the ratio thereof, and the mixture was uniformly mixed.
- the present invention uses a comparative polishing liquid 1 to 3 and the polishing liquid of the present invention 1 to 9 pairs of high density silicon dioxide (HDP-Oxide), silicon nitride (Si3N4) and pattern crystal.
- the circle is polished.
- the polishing liquid of the present invention is compared with the comparative polishing liquid, and a certain amount of a mixture of a naphthalene sulfonate surfactant and a phosphate surfactant is added, and the silicon nitride is removed.
- the rate is effectively suppressed without affecting the removal of silicon oxide, and the surfactant-added mixture can achieve a higher selectivity ratio of silicon nitride removal rate of high-density silicon dioxide than a single surfactant.
- the removal rate of silicon nitride can be adjusted by adding the amount of the surfactant, thereby controlling the selection ratio of the removal rate of the high-density silicon dioxide to the silicon nitride, which satisfies the process requirements in the polishing process of the shallow trench isolation layer.
- the polishing liquid of the present invention has a higher correction ability for the step structure of the pattern wafer than the comparative polishing liquid 2.
- the polishing liquid of the present invention is an ideal abrasive shallow trench isolation layer polishing liquid which uses silica sol as an abrasive and has better stability and lower cost than a polishing liquid containing cerium oxide as an abrasive.
- wt% of the present invention refers to the mass percentage.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
本发明公开了一种用于浅沟槽隔离工艺的化学机械抛光液，它含有一种二氧化硅磨料，一种或多种阴离子表面活性剂和水，该抛光液具有较高的高密度二氧化硅（HDP-Oxide）的去除速率以及较高的高密度二氧化硅（HDP-Oxide）对氮化硅的抛光选择比，对图形晶圆的台阶结构具有较高的校正能力，表面均一性较好。
Description
一种化学机械抛光液 技术领域
本发明涉及一种化学机械抛光液， 更具体地说， 是涉及一种用于浅沟槽 隔离工艺的抛光液。 背景技术
COMS芯片的制造通常是在硅衬底材料上集成数以亿计的有源器件 (包 括 NMOS和 PMOS)， 进而设计各种电路实现复杂的逻辑功能和模拟功能。 要确保不同器件之间的电学隔离， 就要采用绝缘材料将其隔离， 浅沟槽隔离 (STI ) 就是在有源器件之间形成隔离区的工业化方法。 这种隔离方法， 是 在衬底上生长一层二氧化硅层， 然后再淀积一层氮化硅薄膜， 二者的典型厚 度分别为 10-20nm和 50-1 OOnm, 然后进行涂胶，、 曝光和显影 （如附图 1 所示)。
从图 1中可知，步骤 5-6需要用 CMP平坦化工艺，要求快速去除二氧 化硅并停止在氮化硅上面， 这就要求其抛光液要具有较高的 HDP/SIN的选 择比， 通常要大于 10， 并且在不同密度区域的碟形凹陷不能相差 200埃， 表面光滑洁净， 颗粒污染物和缺陷等均小于工艺要求的指标。
CN100339420C 公开了一种抛光液， 含有氧化铈、 两性离子化合物、 羧酸聚合物和阳离子化合物， 该抛光液采用两性离子化合物来调节二氧化硅 与氮化硅的去除速率选择比 以氧化铈作为磨料的抛光液， 容易产生沉淀 分层， 对在线的设备要求较高， 增加了成本。
目前芯片厂广泛应用的是二氧化铈抛光液， 该类抛光液抛光速度快， 对 氮化硅的选择比较高， 是较为成熟的工业化产品， 但该类抛光液容易产生沉 淀分层， 对在线的设备要求较高， 另外价格昂贵， 在全球芯片行业降耗增效 的背景下， 降低成本也是抛光液的要求之一。
发明内容
针对现有技术中存在的缺陷， 本发明提供了一种成本较低， 效果优良的 化学机械抛光液。
在该抛光液中， 采用二氧化硅溶胶为磨料， 采用阴离子表面活性剂降低 氮化硅的去除速率， 达到工艺要求的选择比， 另外硅基磨料也进一步降低了 浆料的成本。 是一种较为理想的 STI抛光液。
本发明所提供的抛光液， 包括一种化学机械抛光液， 其特征在于， 所述 抛光液包含二氧化硅磨料， 水以及一种或多种阴离子表面活性剂。
其中， 二氧化硅磨料的粒径为 20-200nm， 优选为 40-120nm。
其中， 二氧化硅磨料的浓度为 5-40wt%， 优选为 10%-25wt%。
其中， 阴离子表面活性剂为至少两种阴离子表面活性剂的混合物， 优选 为两种阴离子表面活性剂的混合物。
其中，阴离子表面活性剂为萘磺酸盐类表面活性剂和磷酸酯盐类表面活 性剂的混和物。 其中， 萘磺酸盐类表面活性剂选自亚甲基二萘磺酸钠， 甲基 萘磺酸钠甲醛缩聚物和 /或苄基萘磺酸甲醛縮聚物中的一种或多种； 磷酸酯 盐类表面活性剂选自垸基醇聚氧乙烯醚 (n)磷酸酯钾盐、垸基醇聚氧乙烯醚 (n) 磷酸酯铰盐、 垸基酚聚氧乙烯醚 (n)磷酸酯钾盐、 垸基酚聚氧乙烯醚 (n)磷酸 酯铵盐、 垸基酚聚氧乙烯醚 (π)磷酸酯乙醇胺盐、 烷基酚聚氧乙烯醚 (η)磷酸 酯二乙醇胺盐和 /或垸基酚聚氧乙烯醚 (η)磷酸酯三乙醇胺盐中的一种或多种， 其中 η=2~12。 且磷酸酯盐的垸基碳原子数优选自 8~18。
其中， 阴离子表面活性剂的浓度为 0.005%-0.5wt%，优选为 0.01 %-0.2 wt %。
其中， 抛光液还含有杀菌防霉变剂， 优选为季铵盐活性剂。
其中， 抛光液的 PH值为 1一 5， 优选为 2— 3。
本发明的抛光液是采用二氧化硅溶胶为磨料， 与氧化铈为磨料的抛光液相
比，稳定性好，且成本进一歩降低，是一种较为理想的浅沟槽隔离层抛光液。 附图说明
图 1为形成隔离区的典型方法。
其中， 1为光刻胶， 2为氮化硅， 3为二氧化硅， 4为二氧化硅 具体实施方式
以下结合附图及具体实施例进一步阐述本发明的优点。
按照表 1中各实施例及对比例的成分及其比例配制抛光液， 混合均匀。
表 1 本发明实施例及对比实施例的配方
壬基酚聚
Si02 苄基萘磺
6 a乙烯醚
20 酸甲醛缩 0.005 0.005 2
( 10 ) 磷
(100nm) 聚物
酸酯铵盐
壬基醇聚
Si02 甲基萘磺
氧乙烯醚
7 25 酸钠甲醛 0.15 0.05 3
( 2 )磷酸
(80nm) 缩合物
酯铰盐
十八烷基
Si02 甲基萘磺 醇聚氧乙
8 40 酸钠甲酵 0.4 烯醚（12 ) 0.1 4
(20nm) 缩合物 磷酸酯钾 十二烷基
Si02 苄基萘磺 醇聚氧乙 十二垸基
9 5 酸甲醛缩 0.003 烯醚 （7 ) 0.002 一 基节 0.005 1
(200nm) 聚物 磷酸酯钾 基氯化铵
±卜 效果实施例 1
为了进一步考察该类抛光液的抛光情况，本发明采用对比抛光液 1 ~3和 本发明的抛光液 1 ~9对高密度二氧化硅 （HDP-Oxide)、 氮化硅 （Si3N4) 和图形晶圆进行抛光。
抛光条件为： 抛光垫为 IC pad，下压力为 3.0psi， 转速为抛光盘 /抛光头 =70/90rpm， 抛光液流速为 100ml/min， 抛光时间为 1 min。
结果如表 2所示： ' 表 2对比抛光液和本发明抛光液 1-9的抛光结果
去除速率 (A/min) 图
图形晶
形晶圆
圆抛光
表面污
前的沟 抛光后
选择 染物颗
抛光液 槽台阶
HDP-Oxide Si3N4 比 的沟槽 粒 （颗 /
高度
片）
(埃） 台阶度
(埃）
对比 1 1964 1740 1
对比 2 1972 250 8 2300 1657
对比 3 1937 1403 1
无划
1 1936 125 15 2300 143
痕， 无
残留物
无划
2 1892 67 28 2300 161 痕， 无
残留物
3 2037 62 33
4 1683 73 23
5 1765 51 35
6 2215 128 17
7 2017 1 12 18
8 1546 142 1 1
9 1165 89 13 如表 2所示， 本发明的抛光液和对比抛光液相比， 添加一定量的萘磺酸 盐类表面活性剂和磷酸酯类表面活性剂的混合物后，氮化硅的去除速率得到 有效的抑制而不影响氧化硅的去除， 与单一添加表面活性剂相比， 添加表面 活性剂的混合物能获得更高的高密度二氧化硅对氮化硅的去除速率的选择 比， 而且可以通过添加表面活性剂的用量来调节氮化硅的去除速率， 进而控 制高密度二氧化硅对氮化硅的去除速率的选择比，满足了浅沟槽隔离层抛光 过程中的工艺要求。而且与对比抛光液 2相比， 本发明的抛光液对图形晶圆 的台阶结构具有较高的校正能力。
本发明的抛光液是采用二氧化硅溶胶为磨料， 与氧化铈为磨料的抛光液 相比， 稳定性好， 且成本进一步降低， 是一种较为理想的浅沟槽隔离层抛光 液。
应当理解的是， 本发明所述 wt%均指的是质量百分含量。
应当注意的是， 本发明的实施例有较佳的实施性， 且并非对本发明作任 何形式的限制，任何熟悉该领域的技术人员可能利用上述揭示的技术内容变 更或修饰为等同的有效实施例， 但凡未脱离本发明技术方案的内容， 依据本 发明的技术实质对以上实施例所作的任何修改或等同变化及修饰，均仍属于 本发明技术方案的范围内。
Claims
1. 一种化学机械抛光液， 其特征在于， 所述抛光液包含二氧化硅磨料， 水以及一种或多种阴离子表面活性剂。
2. 如权利要求 1所述的化学机械抛光液， 其特征在于， 所述的二氧化硅 磨料的粒径为 20-200nm。
3. 如权利要求 2所述的化学机械抛光液， 其特征在于， 所述的二氧化硅 磨料的粒径为 40-120nm。
4. 如权利要求 1所述的化学机械抛光液， 其特征在于， 所述的二氧化硅 磨料的浓度为 5-40wt%。
5. 如权利要求 4所述的化学机械抛光液， 其特征在于， 所述的二氧化硅 磨料的浓度为 10%-25wt%。
6. 如权利要求 1所述的化学机械抛光液， 其特征在于， 所述的阴离子表 面活性剂为至少两种阴离子表面活性剂的混合物。
7. 如权利要求 1所述的化学机械抛光液， 其特征在于， 所述的阴离子表 面活性剂为两种阴离子表面活性剂的混合物。
8. 如权利要求 6或 7所述的化学机械抛光液， 其特征在于， 所述的阴离 子表面活性剂为萘磺酸盐类表面活性剂和磷酸酯盐类表面活性剂的 混和物。
9. 如权利要求 8所述的化学机械抛光液， 其特征在于， 所述的萘磺酸盐 类表面活性剂选自亚甲基二萘磺酸钠， 甲基萘磺酸钠甲醛缩聚物和 / 或苄基萘磺酸甲醛缩聚物中的一种或多种。
10. 如权利要求 8所述的化学机械抛光液， 其特征在于， 所述的磷酸酯盐 类表面活性剂选自垸基醇聚氧乙烯醚 (π)磷酸酯钾盐、 烷基醇聚氧乙 烯醚 (η)磷酸酯铵盐、 垸基酚聚氧乙烯醚 (η)磷酸酯钾盐、 垸基酚聚氧
乙烯醚 (n,磷酸酯铵盐、 垸基酚聚氧乙烯醚 (n )磷酸酯乙醇胺盐、 烷基 酚聚氧乙烯醚 ( n)磷酸酯二乙醇胺盐和 /或垸基酚聚氧乙烯醚 (n)磷酸酯 三乙醇胺盐中的一种或多种，其中 n=2~12。
11. 如权利要求 10所述的化学机械抛光液， 其特征在于， 所述磷酸酯盐 的垸基碳原子数选自 8~18。
12. 如权利要求 1所述的化学机械抛光液， 其特征在于， 所述阴离子表面 活性剂的浓度为 0.005%-0.5wt%。
13. 如权利要求 1所述的化学机械抛光液， 其特征在于， 所述混合阴离子 表面活性剂的浓度为 0.01 %-0.2 wt %。
14. 如权利要求 1所述的化学机械抛光液， 其特征在于， 所述抛光液还含 有杀菌防霉变剂。
15. 如权利要求 14所述的化学机械抛光液， 其特征在于， 所述抛光液还 含有季铵盐活性剂。
16. 如权利要求 1 所述的化学机械抛光液， 其特征在于， 所述抛光液的 PH值为 1一5。
17. 如权利要求 1 所述的化学机械抛光液， 其特征在于， 所述抛光液的 PH值为 2—3。
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US10037889B1 (en) | 2017-03-29 | 2018-07-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films |
| WO2020131153A1 (en) * | 2018-12-19 | 2020-06-25 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
| US10763119B2 (en) | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
| US11680186B2 (en) | 2020-11-06 | 2023-06-20 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
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| CN1902292A (zh) * | 2003-11-14 | 2007-01-24 | 昭和电工株式会社 | 抛光组合物和抛光方法 |
| CN102051128A (zh) * | 2009-11-06 | 2011-05-11 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| WO2012020672A1 (ja) * | 2010-08-09 | 2012-02-16 | 株式会社 フジミインコーポレーテッド | 研磨用組成物および研磨方法 |
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| US20050090104A1 (en) * | 2003-10-27 | 2005-04-28 | Kai Yang | Slurry compositions for chemical mechanical polishing of copper and barrier films |
| US6964600B2 (en) * | 2003-11-21 | 2005-11-15 | Praxair Technology, Inc. | High selectivity colloidal silica slurry |
| US20100130013A1 (en) * | 2008-11-24 | 2010-05-27 | Applied Materials, Inc. | Slurry composition for gst phase change memory materials polishing |
| CN103509468B (zh) * | 2012-06-21 | 2017-08-11 | 安集微电子（上海）有限公司 | 一种用于硅通孔平坦化的化学机械抛光液 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1246505A (zh) * | 1998-09-01 | 2000-03-08 | 不二见株式会社 | 抛光组合物 |
| CN1902292A (zh) * | 2003-11-14 | 2007-01-24 | 昭和电工株式会社 | 抛光组合物和抛光方法 |
| CN102051128A (zh) * | 2009-11-06 | 2011-05-11 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| WO2012020672A1 (ja) * | 2010-08-09 | 2012-02-16 | 株式会社 フジミインコーポレーテッド | 研磨用組成物および研磨方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10037889B1 (en) | 2017-03-29 | 2018-07-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films |
| WO2020131153A1 (en) * | 2018-12-19 | 2020-06-25 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
| US10759970B2 (en) | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
| US10763119B2 (en) | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
| US11424131B2 (en) | 2018-12-19 | 2022-08-23 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
| US11680186B2 (en) | 2020-11-06 | 2023-06-20 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
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| CN103834305A (zh) | 2014-06-04 |
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