TW201420740A - 一種化學機械拋光液 - Google Patents
一種化學機械拋光液 Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims description 61
- 239000000126 substance Substances 0.000 title claims description 21
- 239000002002 slurry Substances 0.000 title abstract description 7
- 239000003945 anionic surfactant Substances 0.000 claims abstract description 16
- 239000002245 particle Substances 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000007788 liquid Substances 0.000 claims description 49
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 26
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 26
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 12
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 12
- 239000004094 surface-active agent Substances 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 8
- PSZYNBSKGUBXEH-UHFFFAOYSA-M naphthalene-1-sulfonate Chemical compound C1=CC=C2C(S(=O)(=O)[O-])=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-M 0.000 claims description 5
- 150000003013 phosphoric acid derivatives Chemical class 0.000 claims description 5
- 125000005233 alkylalcohol group Chemical group 0.000 claims description 4
- ZRIUUUJAJJNDSS-UHFFFAOYSA-N ammonium phosphates Chemical compound [NH4+].[NH4+].[NH4+].[O-]P([O-])([O-])=O ZRIUUUJAJJNDSS-UHFFFAOYSA-N 0.000 claims description 4
- 229910019142 PO4 Inorganic materials 0.000 claims description 3
- 239000013543 active substance Substances 0.000 claims description 3
- 239000010452 phosphate Substances 0.000 claims description 3
- -1 phosphate ester ethanolamine salt Chemical class 0.000 claims description 3
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 claims description 3
- WWBXZKQQXUFSED-UHFFFAOYSA-N [Na].O=C.C1=CC=C2C(S(=O)(=O)OC)=CC=CC2=C1 Chemical compound [Na].O=C.C1=CC=C2C(S(=O)(=O)OC)=CC=CC2=C1 WWBXZKQQXUFSED-UHFFFAOYSA-N 0.000 claims description 2
- 230000000844 anti-bacterial effect Effects 0.000 claims description 2
- YXJUEYDETJCBKA-UHFFFAOYSA-N bis(2-hydroxyethyl)azanium;dihydrogen phosphate Chemical compound OP(O)(O)=O.OCCNCCO YXJUEYDETJCBKA-UHFFFAOYSA-N 0.000 claims description 2
- NHFDKKSSQWCEES-UHFFFAOYSA-N dihydrogen phosphate;tris(2-hydroxyethyl)azanium Chemical class OP(O)(O)=O.OCCN(CCO)CCO NHFDKKSSQWCEES-UHFFFAOYSA-N 0.000 claims description 2
- LCRMGUFGEDUSOG-UHFFFAOYSA-N naphthalen-1-ylsulfonyloxymethyl naphthalene-1-sulfonate;sodium Chemical compound [Na].C1=CC=C2C(S(=O)(OCOS(=O)(=O)C=3C4=CC=CC=C4C=CC=3)=O)=CC=CC2=C1 LCRMGUFGEDUSOG-UHFFFAOYSA-N 0.000 claims description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims 3
- KTHUKEZOIFYPEH-UHFFFAOYSA-N 1-benzylnaphthalene Chemical compound C=1C=CC2=CC=CC=C2C=1CC1=CC=CC=C1 KTHUKEZOIFYPEH-UHFFFAOYSA-N 0.000 claims 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 150000002148 esters Chemical class 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 239000003112 inhibitor Substances 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 claims 1
- 238000012937 correction Methods 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000001133 acceleration Effects 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 238000002955 isolation Methods 0.000 description 9
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 238000013517 stratification Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- NMDKWAQVRNUKQH-UHFFFAOYSA-N 2-benzylnaphthalene-1-sulfonic acid formaldehyde Chemical compound C=O.C(C1=CC=CC=C1)C1=C(C2=CC=CC=C2C=C1)S(=O)(=O)O NMDKWAQVRNUKQH-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 229940121375 antifungal agent Drugs 0.000 description 1
- 239000003429 antifungal agent Substances 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001767 cationic compounds Chemical class 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229940119177 germanium dioxide Drugs 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
本發明公開了一種用於淺溝槽隔離工藝的化學機械拋光液,它含有一種二氧化矽磨料,一種或多種陰離子表面活性劑和水,該拋光液具有較高的高密度二氧化矽(HDP-Oxide)的去除速率以及較高的高密度二氧化矽(HDP-Oxide)對氮化矽的拋光選擇比,對圖形晶圓的臺階結構具有較高的校正能力,表面均一性較好。
Description
本發明涉及一種化學機械拋光液,更具體地說,是涉及一種用於淺溝槽隔離工藝的拋光液。
CMOS晶片的製造通常是在矽襯底材料上集成數以億計的有源裝置(包括NMOS和PMOS),進而設計各種電路實現複雜的邏輯功能和類比功能。要確保不同裝置之間的電學隔離,就要採用絕緣材料將其隔離,淺溝槽隔離(STI)就是在有源裝置之間形成隔離區的工業化方法。這種隔離方法,是在襯底上生長一層二氧化矽層,然後再澱積一層氮化矽薄膜,二者的典型厚度分別為10-20nm和50-100nm,然後進行塗膠、曝光和顯影(如附圖1所示)。
從圖1中可知,步驟5-6需要用CMP平坦化工藝,要求快速去除二氧化矽並停止在氮化矽上面,這就要求其拋光液要具有較高的HDP/SIN的選擇比,通常要大於10,並且在不同密度區域的碟形凹陷不能相差200埃,表面光滑潔淨,顆粒污染物和缺陷等均小於工藝要求的指標。
CN100339420C公開了一種拋光液,含有氧化鈰、兩性離子化合物、羧酸聚合物和陽離子化合物,該拋光液採用兩性離子化合物來調節二氧化矽與氮化矽的去除速率選擇比,但以氧化鈰作為磨料的拋光液,容易產生沉澱分層,對線上的設備要求較高,增加了成本。
目前晶片廠廣泛應用的是二氧化鈰拋光液,該類拋光液拋光速度快,對氮化矽的選擇比較高,是較為成熟的工業化產品,但該類拋光液容易產生沉澱分層,對線上的設備要求較高,另外價格昂貴,在全球晶片行業降耗增效的背景下,降低成本也是拋光液的要求之一。
針對現有技術中存在的缺陷,本發明提供了一種成本較低,效果優良的化學機械拋光液。
在該拋光液中,採用二氧化矽溶膠為磨料,採用陰離子表面活性劑降低氮化矽的去除速率,達到工藝要求的選擇比,另外矽基磨料也進一步降低了漿料的成本。是一種較為理想的STI拋光液。
本發明所提供的拋光液,包括一種化學機械拋光液,其特徵在於,所述拋光液包含二氧化矽磨料,水以及一種或多種陰離子表面活性劑。
其中,二氧化矽磨料的粒徑為20-200nm,優選為40-120nm。
其中,二氧化矽磨料的濃度為5-40wt%,優選為10%-
25wt%。
其中,陰離子表面活性劑為至少兩種陰離子表面活性劑的混合物,優選為兩種陰離子表面活性劑的混合物。
其中,陰離子表面活性劑為萘磺酸鹽類表面活性劑和磷酸酯鹽類表面活性劑的混和物。其中,萘磺酸鹽類表面活性劑選自亞甲基二萘磺酸鈉,甲基萘磺酸鈉甲醛縮聚物和/或苄基萘磺酸甲醛縮聚物中的一種或多種;磷酸酯鹽類表面活性劑選自烷基醇聚氧乙烯醚(n)磷酸酯鉀鹽、烷基醇聚氧乙烯醚(n)磷酸酯銨鹽、烷基酚聚氧乙烯醚(n)磷酸酯鉀鹽、烷基酚聚氧乙烯醚(n)磷酸酯銨鹽、烷基酚聚氧乙烯醚(n)磷酸酯乙醇胺鹽、烷基酚聚氧乙烯醚(n)磷酸酯二乙醇胺鹽和/或烷基酚聚氧乙烯醚(n)磷酸酯三乙醇胺鹽中的一種或多種,其中n=2~12。且磷酸酯鹽的烷基碳原子數優選自8~18。
其中,陰離子表面活性劑的濃度為0.005%-0.5wt%,優選為0.01%-0.2wt%。
其中,拋光液還含有殺菌防黴變劑,優選為季銨鹽活性劑。
其中,拋光液的PH值為1-5,優選為PH2-PH3。
本發明的拋光液是採用二氧化矽溶膠為磨料,與氧化鈰為磨料的拋光液相比,穩定性好,且成本進一步降低,是一種較為理想的淺溝槽隔離層拋光液。
1‧‧‧光阻
2‧‧‧氮化矽
3‧‧‧二氧化矽
4‧‧‧二氧化矽
圖1為形成隔離區的典型方法之示意圖。
其中,1為光阻,2為氮化矽,3為二氧化矽,4為二氧化矽
下面通過具體實施例進一步闡述本發明的優點,但本發明的保護範圍不僅僅局限於下述實施例。
按照表1中各實施例及對比例的成分及其比例配製拋光液,混合均勻。
為了進一步考察該類拋光液的拋光情況,本發明採用對比拋光液1~3和本發明的拋光液1~9對高密度二氧化矽(HDP-Oxide)、氮化矽(Si3N4)和圖形晶圓進行拋光。
拋光條件為:拋光墊為IC pad,下壓力為3.0psi,轉速為拋光盤/拋光頭=70/90rpm,拋光液流速為100ml/min,拋光時間為1min。
結果如表2所示:
如表2所示,本發明的拋光液和對比拋光液相比,添加一定量的萘磺酸鹽類表面活性劑和磷酸酯類表面活性劑的混合物後,氮化矽的去除速率得到有效的抑制而不影響氧化矽的去除,與單一添加表面活性劑相比,添加表面活性劑的混合物能獲得更高的高密度二氧化矽對氮化矽的去除速率的選擇比,而且可以通過添加表面活性劑的用量來調節氮化矽的去除速率,進而控制高密度二氧化矽對氮化矽的去除速率的選擇比,滿足了淺溝槽隔離層拋光過程中的工藝要求。而且與對比拋光液2相比,本發明的拋光液對圖形晶圓的臺階結構具有較高的校正能力。
本發明的拋光液是採用二氧化矽溶膠為磨料,與氧化鈰為磨料的拋光液相比,穩定性好,且成本進一步降低,是一種較為理想的淺溝槽隔離層拋光液。
應當理解的是,本發明所述wt%均指的是質量百分比含量。
應當注意的是,本發明的實施例有較佳的實施性,且並非對本發明作任何形式的限制,任何熟悉該領域的技術人員可能利用上述揭示的技術內容變更或修飾為等同的有效實施例,但凡未脫離本發明技術方案的內容,依據本發明的技術
實質對以上實施例所作的任何修改或等同變化及修飾,均仍屬於本發明技術方案的範圍內。
1‧‧‧光阻
2‧‧‧氮化矽
3‧‧‧二氧化矽
4‧‧‧二氧化矽
Claims (17)
- 一種化學機械拋光液,包含二氧化矽磨料,水以及一種或多種陰離子表面活性劑。
- 如請求項1所述的化學機械拋光液,其中所述的二氧化矽磨料的粒徑為20-200nm。
- 如請求項2所述的化學機械拋光液,其中所述的二氧化矽磨料的粒徑為40-120nm。
- 如請求項1所述的化學機械拋光液,其中所述的二氧化矽磨料的濃度為5-40wt%。
- 如請求項4所述的化學機械拋光液,其中所述的二氧化矽磨料的濃度為10%-25wt%。
- 如請求項1所述的化學機械拋光液,其中所述的陰離子表面活性劑為至少兩種陰離子表面活性劑的混合物。
- 如請求項1所述的化學機械拋光液,其中所述的陰離子表面活性劑為兩種陰離子表面活性劑的混合物。
- 如請求項6或7所述的化學機械拋光液,其中所述的陰離子表面活性劑為萘磺酸鹽類表面活性劑和磷酸酯鹽類表面活性劑的混和物。
- 如請求項8所述的化學機械拋光液,其中所述的萘磺酸鹽類表面活性劑選自亞甲基二萘磺酸鈉,甲基萘磺酸鈉甲醛縮聚物和/或苄基萘磺酸甲醛縮聚物中的一種或多種。
- 如請求項8所述的化學機械拋光液,其中所述的磷酸酯鹽類表面活性劑選自烷基醇聚氧乙烯醚(n)磷酸酯鉀鹽、烷基醇聚氧乙烯醚(n)磷酸酯銨鹽、烷基酚聚氧乙烯醚(n)磷 酸酯鉀鹽、烷基酚聚氧乙烯醚(n)磷酸酯銨鹽、烷基酚聚氧乙烯醚(n)磷酸酯乙醇胺鹽、烷基酚聚氧乙烯醚(n)磷酸酯二乙醇胺鹽和/或烷基酚聚氧乙烯醚(n)磷酸酯三乙醇胺鹽中的一種或多種,其中n=2~12。
- 如請求項10所述的化學機械拋光液,其中所述磷酸酯鹽的烷基碳原子數選自8~18。
- 如請求項1所述的化學機械拋光液,其中所述陰離子表面活性劑的濃度為0.005%-0.5wt%。
- 如請求項1所述的化學機械拋光液,其中所述混合陰離子表面活性劑的濃度為0.01%-0.2wt%。
- 如請求項1所述的化學機械拋光液,其中所述拋光液還含有殺菌防黴變劑。
- 如請求項14所述的化學機械拋光液,其中所述拋光液還含有季銨鹽活性劑。
- 如請求項1所述的化學機械拋光液,其中所述拋光液的PH值為1-5。
- 如請求項1所述的化學機械拋光液,其中所述拋光液的PH值為2-3。
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US10037889B1 (en) | 2017-03-29 | 2018-07-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films |
US10759970B2 (en) * | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
US10763119B2 (en) * | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
US11680186B2 (en) | 2020-11-06 | 2023-06-20 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
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US20050090104A1 (en) * | 2003-10-27 | 2005-04-28 | Kai Yang | Slurry compositions for chemical mechanical polishing of copper and barrier films |
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