WO2014069367A1 - Corps fritté en oxyde électroconducteur et film à faible indice de réfraction produit au moyen dudit oxyde électroconducteur - Google Patents

Corps fritté en oxyde électroconducteur et film à faible indice de réfraction produit au moyen dudit oxyde électroconducteur Download PDF

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Publication number
WO2014069367A1
WO2014069367A1 PCT/JP2013/078982 JP2013078982W WO2014069367A1 WO 2014069367 A1 WO2014069367 A1 WO 2014069367A1 JP 2013078982 W JP2013078982 W JP 2013078982W WO 2014069367 A1 WO2014069367 A1 WO 2014069367A1
Authority
WO
WIPO (PCT)
Prior art keywords
conductive oxide
sintered body
oxide
metal
sputtering
Prior art date
Application number
PCT/JP2013/078982
Other languages
English (en)
Japanese (ja)
Inventor
淳史 奈良
Original Assignee
Jx日鉱日石金属株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx日鉱日石金属株式会社 filed Critical Jx日鉱日石金属株式会社
Publication of WO2014069367A1 publication Critical patent/WO2014069367A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica

Definitions

  • Example 12 As shown in Table 1, raw material powder excluding the glass-forming oxide was prepared, and this raw material powder was prepared at a blending ratio shown in Table 1. Next, after mixing this, the powder material was pressure sintered at a temperature of 1050 ° C. and a pressure of 250 kgf / cm 2 under an argon atmosphere or a vacuum atmosphere, and the sintered body was finished into a target shape by machining. . Next, sputtering was performed using the above-mentioned finished 6-inch ⁇ size target. The sputtering conditions were the same as in Example 1, and a film thickness of 5000 mm was formed. Table 1 shows the measurement results of the refractive index (wavelength 550 nm) of the film formation sample.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

L'invention concerne un corps fritté en oxyde électroconducteur, caractérisé en ce qu'il comprend du zinc (Zn) et un métal trivalent ou tétravalent et en ce qu'il comprend en plus un métal alcalin, un métal alcalino-terreux et/ou un métal capable de former un oxyde de formation de verre et de l'oxygène, le rapport de teneur atomique de M et Zn satisfaisant la formule : 0,1 % ≤ M/(Zn+M) ≤ 10 %, M (en pourcentage atomique) représentant la teneur en métal trivalent ou tétravalent, et le métal alcalin, le métal alcalino-terreux et/ou le métal capable de former un oxyde de formation de verre étant contenus dans une quantité totale de 0,1 à 70 % mol en termes de teneur en oxyde. Le corps fritté en oxyde électroconducteur selon la présente invention présente une faible résistance volumique, peut être soumis à une pulvérisation cathodique à courant continu et permet la formation d'un film mince présentant un faible indice de réfraction. Le film mince peut être utilisé comme film d'ajustement optique destiné à divers dispositifs optiques.
PCT/JP2013/078982 2012-10-30 2013-10-25 Corps fritté en oxyde électroconducteur et film à faible indice de réfraction produit au moyen dudit oxyde électroconducteur WO2014069367A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012238450 2012-10-30
JP2012-238450 2012-10-30

Publications (1)

Publication Number Publication Date
WO2014069367A1 true WO2014069367A1 (fr) 2014-05-08

Family

ID=50627275

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/078982 WO2014069367A1 (fr) 2012-10-30 2013-10-25 Corps fritté en oxyde électroconducteur et film à faible indice de réfraction produit au moyen dudit oxyde électroconducteur

Country Status (2)

Country Link
TW (1) TW201431823A (fr)
WO (1) WO2014069367A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015068535A1 (fr) * 2013-11-06 2015-05-14 三井金属鉱業株式会社 Cible de pulvérisation et son procédé de production
CN112912355A (zh) * 2018-10-31 2021-06-04 出光兴产株式会社 烧结体

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000119062A (ja) * 1998-02-16 2000-04-25 Japan Energy Corp 光透過膜及び光透過膜形成用スパッタリングタ―ゲット
WO2006129410A1 (fr) * 2005-05-30 2006-12-07 Nippon Mining & Metals Co., Ltd. Cible de pulvérisation cathodique et procédé de fabrication idoine
JP2009228034A (ja) * 2008-03-19 2009-10-08 Iwate Univ ＺｎＯ系ターゲット及びその製造方法並び導電性薄膜の製造方法及び導電性薄膜
WO2009145152A1 (fr) * 2008-05-27 2009-12-03 株式会社カネカ Film conducteur transparent et son procédé de fabrication
WO2011074694A1 (fr) * 2009-12-16 2011-06-23 三菱マテリアル株式会社 Film conducteur transparent, cellule solaire l'utilisant, cible de pulvérisation cathodique pour former ledit film conducteur transparent et son procédé de fabrication
WO2012108157A1 (fr) * 2011-02-10 2012-08-16 三菱マテリアル株式会社 Cible de pulvérisation pour former un film transparent pour cellules solaires, et procédé de production de celle-ci
WO2012114713A1 (fr) * 2011-02-25 2012-08-30 三菱マテリアル株式会社 Film d'oxyde transparent et son procédé de production

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000119062A (ja) * 1998-02-16 2000-04-25 Japan Energy Corp 光透過膜及び光透過膜形成用スパッタリングタ―ゲット
WO2006129410A1 (fr) * 2005-05-30 2006-12-07 Nippon Mining & Metals Co., Ltd. Cible de pulvérisation cathodique et procédé de fabrication idoine
JP2009228034A (ja) * 2008-03-19 2009-10-08 Iwate Univ ＺｎＯ系ターゲット及びその製造方法並び導電性薄膜の製造方法及び導電性薄膜
WO2009145152A1 (fr) * 2008-05-27 2009-12-03 株式会社カネカ Film conducteur transparent et son procédé de fabrication
WO2011074694A1 (fr) * 2009-12-16 2011-06-23 三菱マテリアル株式会社 Film conducteur transparent, cellule solaire l'utilisant, cible de pulvérisation cathodique pour former ledit film conducteur transparent et son procédé de fabrication
WO2012108157A1 (fr) * 2011-02-10 2012-08-16 三菱マテリアル株式会社 Cible de pulvérisation pour former un film transparent pour cellules solaires, et procédé de production de celle-ci
WO2012114713A1 (fr) * 2011-02-25 2012-08-30 三菱マテリアル株式会社 Film d'oxyde transparent et son procédé de production

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015068535A1 (fr) * 2013-11-06 2015-05-14 三井金属鉱業株式会社 Cible de pulvérisation et son procédé de production
CN112912355A (zh) * 2018-10-31 2021-06-04 出光兴产株式会社 烧结体
US11434172B2 (en) 2018-10-31 2022-09-06 Idemitsu Kosan Co., Ltd. Sintered body

Also Published As

Publication number Publication date
TW201431823A (zh) 2014-08-16

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