WO2014061114A1 - Dispositif de conversion de puissance - Google Patents

Dispositif de conversion de puissance Download PDF

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Publication number
WO2014061114A1
WO2014061114A1 PCT/JP2012/076769 JP2012076769W WO2014061114A1 WO 2014061114 A1 WO2014061114 A1 WO 2014061114A1 JP 2012076769 W JP2012076769 W JP 2012076769W WO 2014061114 A1 WO2014061114 A1 WO 2014061114A1
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WO
WIPO (PCT)
Prior art keywords
capacitor
electric field
voltage
semiconductor switching
power conversion
Prior art date
Application number
PCT/JP2012/076769
Other languages
English (en)
Japanese (ja)
Inventor
勉 小南
加藤　修治
勇一郎 吉武
研吾 後藤
大輔 松元
安藤　正彦
恩田　謙一
Original Assignee
株式会社日立製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日立製作所 filed Critical 株式会社日立製作所
Priority to JP2014541862A priority Critical patent/JP5852745B2/ja
Priority to PCT/JP2012/076769 priority patent/WO2014061114A1/fr
Publication of WO2014061114A1 publication Critical patent/WO2014061114A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/487—Neutral point clamped inverters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

Definitions

  • the present invention relates to a power conversion device using a semiconductor switching device.
  • Power converters using semiconductor switching elements are provided with semiconductor switching devices in the upper arm and lower arm, respectively, and the upper and lower semiconductor switching devices switch alternately to convert the power supplied by the main power supply to the desired form. And supply to the load.
  • semiconductor switching device an IGBT (Insulated Gate Bipolar Transistor) can be used.
  • the free-wheeling diode that has been widely used in the past is a Si-PiN diode in which a current flows as charges and holes move. In this case, when the switching device is switched from the conducting state to the non-conducting state, a current called a recovery current flows through the freewheeling diode, causing a loss.
  • an SBD Schottky Barrier Diode
  • SiC silicon
  • GaN wide gap semiconductor
  • Inductance is energy in which magnetic flux generated by current flow is stored in space, and inductance can be reduced by suppressing magnetic flux. For this reason, the main circuit of the power conversion device generally reduces the inductance by making the current paths face each other at a short distance to cancel the magnetic flux.
  • the voltage used is several kV to several tens kV, and the effect of canceling the magnetic flux is limited in order to secure insulation and creepage distance, and therefore the effect of reducing the main circuit inductance. There are also limitations.
  • Patent Document 1 describes a technique for controlling a current change (di / dt).
  • a circuit in which a capacitor and a Zener diode are connected in series is connected in parallel between the collector terminal and the gate terminal of the IGBT.
  • the collector-emitter voltage increases and at the same time the collector-gate voltage increases.
  • the voltage applied between the collector terminal and the gate terminal exceeds the breakdown voltage of the Zener diode, since the voltage change is steep, an increase in switching loss can be suppressed.
  • a capacitor is connected in parallel with the feedback capacitance of the IGBT, and the feedback capacitance of the IGBT is equivalently increased. Since this equivalently increased feedback capacitance is charged, the change in collector current (di / dt) is reduced, so that the surge voltage ( ⁇ V) can be suppressed.
  • the present invention has been made in view of the above problems, and an object thereof is to provide a power conversion device that can reduce both the switching loss and surge voltage of a semiconductor switching element with a simple circuit configuration. .
  • a non-linear capacitor whose capacitance increases significantly when an electric field higher than the coercive electric field is applied is connected between the ON / OFF control electrode and the high potential side electrode of the switching device.
  • the switching loss can be suppressed.
  • the voltage applied to the switching device is equal to or greater than the value corresponding to the coercive electric field, the capacitance of the capacitor is increased and the current change is suppressed, so that the surge voltage can be suppressed.
  • FIG. 1 is a circuit diagram of a power conversion device according to a first embodiment.
  • FIG. 5 is a diagram showing a charge density-electric field strength characteristic of a capacitor included in the surge suppression circuit 3. It is a figure which shows the electric current change and voltage change when changing the semiconductor switching device 1 from a conduction
  • FIG. 3 is a circuit diagram of a power conversion device according to a second embodiment. It is a circuit diagram of the power converter device concerning Embodiment 3. It is a circuit diagram of the power converter device concerning Embodiment 4.
  • FIG. 1 is a circuit diagram of a power conversion apparatus according to Embodiment 1 of the present invention.
  • the circuit shown in FIG. 1 includes a semiconductor switching device 1, a drive circuit 2 for driving the semiconductor switching device 1, a surge suppression circuit 3, a DC smoothing capacitor 10, a DC power supply 13, a load 14, and a free wheel diode 15.
  • a current 16 flows through the semiconductor switching device 1 and a voltage 17 is applied between the collector and the emitter.
  • a voltage 18 is applied across the surge suppression circuit 3 (between the collector and gate of the semiconductor switching device 1).
  • a current 19 flows through the load 14.
  • the circuit shown in FIG. 1 has a parasitic inductance 12.
  • the semiconductor switching device 1 has a feedback capacitor 20 and an input capacitor 21 as parasitic capacitors.
  • the DC power supply 13 may be an AC power supply rectified by a rectifier circuit.
  • the semiconductor switching device 1 is an IGBT, but even when other semiconductor switching devices (MOSFET, GTO, etc.) are used, the same effect as the present invention can be exhibited.
  • the surge suppression circuit 3 has a nonlinear capacitor described later.
  • the capacitor includes a high-potential side (collector side in the case of IGBT) terminal of the semiconductor switching device 1 or a wiring connected thereto, and an ON / OFF control electrode (gate electrode in the case of IGBT) of the semiconductor switching device 1 or the same. Connected to the wiring connected to the.
  • FIG. 2 is a diagram showing the charge density-electric field strength characteristics of the capacitors included in the surge suppression circuit 3.
  • the capacitor included in the surge suppression circuit 3 is a non-linear capacitor having characteristics as shown by characteristic 4 in FIG.
  • the linear capacitor characteristic 5 is also shown.
  • the coercive electric field 6 is an electric field value at which the charge density-electric field strength characteristic changes in the nonlinear capacitor.
  • the region 23 is a region where the charge density increment with respect to the electric field strength is low in the characteristic 4
  • the region 24 is a region where the charge density increment relative to the electric field strength is high
  • the coercive electric field 6 is a boundary between these regions.
  • the rate of change of the charge density with respect to the electric field strength is equivalent to the capacitance.
  • the capacitor included in the surge suppression circuit 3 according to the present invention has a characteristic in which the increase in capacitance greatly changes with the coercive electric field 6 as a boundary. The effect exhibited by this characteristic will be described again with reference to FIGS. Note that the characteristic 4 is configured such that the value of the coercive electric field 6 becomes the electric field strength applied when the voltage of the DC power supply 13 is applied to the nonlinear capacitor.
  • an antiferroelectric material can be considered as a material having nonlinear characteristics as shown in FIG. As shown in FIG. 2, the antiferroelectric material has hysteresis in charge density-electric field strength characteristics. Other materials may be adopted as long as they have the same characteristics as described above.
  • FIG. 3 is a diagram showing a change in current and a change in voltage when the semiconductor switching device 1 is transitioned from a conducting state to a non-conducting state.
  • changes in the current 16 and the voltage 17 when the surge suppression circuit 3 is not provided are shown in a current 16a and a voltage 17a, respectively, and the current 16 and the voltage 17 when the surge suppression circuit 3 is configured using a linear capacitor.
  • Changes are shown in current 16b and voltage 17b, respectively, and changes in current 16 and voltage 17 in Embodiment 1 are shown in current 16c and voltage 17c, respectively.
  • changes in the current 16 and the voltage 17 shown in FIG. 3 will be described.
  • the current 16 is the same in any case.
  • the voltage 17 is a value close to 0 except for a slight voltage due to element resistance.
  • the feedback capacitor 20 is charged, whereby the collector-gate voltage 18 rises and at the same time the collector-emitter voltage 17 rises.
  • the capacitance of the nonlinear capacitor is small. This is almost equivalent to the state where only 20 exists. Therefore, the voltage 17 c rises to the voltage of the DC power supply 13 corresponding to the time for charging the feedback capacitor 20.
  • the voltage 17a rises when the surge suppression circuit 3 is not provided.
  • the increase in the capacitance of the nonlinear capacitor greatly increases. It can be considered that a combined capacitance of the feedback capacitor 20 and the nonlinear capacitor exists between the collector and the gate. That is, the feedback capacitance 20 is equivalently increased. As a result, a current for charging the feedback capacitor 20 that has increased in an equivalent manner is required, so that the rate of change (di / dt) of the current 16c flowing through the semiconductor switching device 1 is reduced.
  • the current 16b when a linear capacitor is used also changes in the same manner.
  • the rise of the voltage 17c is delayed due to the effect of the feedback capacitor 20 that is equivalently increased.
  • the energy stored in the parasitic inductance 12 becomes a surge voltage due to the product of the parasitic inductance 12 and the rate of change (di / dt) of the current 16, and is applied to the semiconductor switching device 1.
  • the rate of change of the current 16c becomes as small as that of the current 16b, the surge voltage when the semiconductor switching device 1 is turned off can be suppressed.
  • the voltage 17c rises steeply until the collector-emitter voltage 17 reaches a value corresponding to the coercive electric field 6, so that switching loss when turning off the semiconductor switching device 1 is suppressed. be able to.
  • FIG. 4 is a diagram showing a current change and a voltage change when the semiconductor switching device 1 is transitioned from the non-conduction state to the conduction state. Each symbol is the same as that in FIG. Hereinafter, changes in the current 16 and the voltage 17 shown in FIG. 4 will be described.
  • the nonlinear capacitor is connected between the high potential side of the semiconductor switching device 1 and the gate electrode, and the current change is maintained while maintaining the voltage change at the time of turn-off at high speed. Keep it small. Thereby, both a switching loss and a surge voltage can be suppressed effectively.
  • the power conversion device according to the first embodiment can exhibit the above-described operation with a non-linear capacitor, it is not necessary to provide a Zener diode in the surge suppression circuit 3 as in Patent Document 1. As a result, loss due to the Zener diode does not occur, so that circuit efficiency can be improved. Moreover, since it is not necessary to consider the concern about the reliability of the Zener diode, it is also preferable from the viewpoint of the reliability of the device.
  • the coercive electric field 6 is set to be the electric field strength when the voltage of the DC power supply 13 is applied to the nonlinear capacitor. It is also possible to adopt such a characteristic that the coercive electric field 6 is reached when a higher electric field strength is reached. However, it should be noted that in this case, the timing at which the slope of the voltage 17c in FIG. 3 begins to become gentle is delayed, so that the effect of suppressing the surge voltage and switching loss is reduced.
  • FIG. 5 is a circuit diagram of a power conversion apparatus according to Embodiment 2 of the present invention.
  • Embodiment 2 it replaced with the surge suppression circuit 3 of Embodiment 1, and provided the surge suppression circuit 3 'which connected resistance in series with respect to the nonlinear capacitor.
  • Other configurations are the same as those of the first embodiment.
  • FIG. 6 is a circuit diagram of a power conversion device according to Embodiment 3 of the present invention.
  • a two-level three-phase power converter is configured using the same circuit configuration as that described in the first and second embodiments. Other points are the same as in the first and second embodiments. According to the third embodiment, the effect of suppressing the switching loss and the surge voltage as in the first and second embodiments can be exhibited also in the two-level three-phase power converter.
  • FIG. 7 is a circuit diagram of a power conversion apparatus according to Embodiment 4 of the present invention.
  • a three-level three-phase power converter is configured using the same circuit configuration as that described in the first and second embodiments. Other points are the same as in the first and second embodiments.
  • FIG. 7 shows only one of the three phases. According to the fourth embodiment, the effect of suppressing the switching loss and the surge voltage as in the first and second embodiments can be exhibited also in the three-level three-phase power converter.
  • the coercive electric field 6 needs to be set to the electric field strength applied when half the voltage of the DC power supply 13 is applied to the nonlinear capacitor. However, for the same reason as described in the first embodiment, it is not always necessary to exactly match the half value of the voltage of the DC power supply 13.
  • 1 semiconductor switching device
  • 2 drive circuit
  • 3 surge suppression circuit
  • 10 DC smoothing capacitor
  • 12 parasitic inductance
  • 13 DC power supply
  • 14 load
  • 15 freewheeling diode
  • 20 feedback capacitance
  • 21 input capacity

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  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)
  • Electronic Switches (AREA)

Abstract

La présente invention concerne un dispositif de conversion de puissance qui permet, grâce à une configuration de circuit simple, de réduire les pertes de commutation d'un élément de commutation semi-conducteur conjointement avec une surtension. Un dispositif de conversion de puissance selon la présente invention est relié à un condensateur non linéaire, la capacité statique augmentant considérablement lorsqu'un champ électrique supérieur ou égal à un champ électrique coercitif lui est transmis, entre une électrode de commande de marche/arrêt et une électrode côté haut potentiel d'un dispositif de commutation (voir figure 1).
PCT/JP2012/076769 2012-10-17 2012-10-17 Dispositif de conversion de puissance WO2014061114A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014541862A JP5852745B2 (ja) 2012-10-17 2012-10-17 電力変換装置
PCT/JP2012/076769 WO2014061114A1 (fr) 2012-10-17 2012-10-17 Dispositif de conversion de puissance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2012/076769 WO2014061114A1 (fr) 2012-10-17 2012-10-17 Dispositif de conversion de puissance

Publications (1)

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WO2014061114A1 true WO2014061114A1 (fr) 2014-04-24

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9990457B2 (en) 2016-01-12 2018-06-05 Toyota Motor Engineering & Manufacturing North America, Inc. Switching circuit including wire traces to reduce the magnitude of voltage and current oscillations
EP3334044A1 (fr) * 2016-12-07 2018-06-13 Fujitsu Limited Circuit de protection, amplificateur et appareil d'alimentation à commutation

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6862722B2 (ja) 2016-09-01 2021-04-21 富士電機株式会社 電力変換装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246770A (ja) * 1988-12-05 1990-10-02 American Teleph & Telegr Co <Att> 高周波共振コンバータ
JPH08195664A (ja) * 1995-01-18 1996-07-30 Fuji Electric Co Ltd 半導体装置のスナバ回路
JPH10248237A (ja) * 1997-03-04 1998-09-14 Toshiba Corp 電力変換装置
JP2000243090A (ja) * 1999-02-19 2000-09-08 Toshiba Corp ダイナミック型半導体記憶装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645906A (ja) * 1992-07-27 1994-02-18 Olympus Optical Co Ltd 入力保護回路

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246770A (ja) * 1988-12-05 1990-10-02 American Teleph & Telegr Co <Att> 高周波共振コンバータ
JPH08195664A (ja) * 1995-01-18 1996-07-30 Fuji Electric Co Ltd 半導体装置のスナバ回路
JPH10248237A (ja) * 1997-03-04 1998-09-14 Toshiba Corp 電力変換装置
JP2000243090A (ja) * 1999-02-19 2000-09-08 Toshiba Corp ダイナミック型半導体記憶装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9990457B2 (en) 2016-01-12 2018-06-05 Toyota Motor Engineering & Manufacturing North America, Inc. Switching circuit including wire traces to reduce the magnitude of voltage and current oscillations
EP3334044A1 (fr) * 2016-12-07 2018-06-13 Fujitsu Limited Circuit de protection, amplificateur et appareil d'alimentation à commutation
US10615788B2 (en) 2016-12-07 2020-04-07 Fujitsu Limited Variable capacitance protection circuit of a circuit element, amplifier, and switching power supply apparatus

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JPWO2014061114A1 (ja) 2016-09-05
JP5852745B2 (ja) 2016-02-03

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