WO2014059660A1 - 光罩、tft玻璃基板及其制造方法 - Google Patents

光罩、tft玻璃基板及其制造方法 Download PDF

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Publication number
WO2014059660A1
WO2014059660A1 PCT/CN2012/083202 CN2012083202W WO2014059660A1 WO 2014059660 A1 WO2014059660 A1 WO 2014059660A1 CN 2012083202 W CN2012083202 W CN 2012083202W WO 2014059660 A1 WO2014059660 A1 WO 2014059660A1
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Prior art keywords
panel
microstructure
glass substrate
additional
pattern
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English (en)
French (fr)
Inventor
林沛
郑华
吴良东
陈上潘
潘龙
高攀
林明文
陈世烽
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US13/643,530 priority Critical patent/US20140103480A1/en
Publication of WO2014059660A1 publication Critical patent/WO2014059660A1/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134336—Matrix
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Definitions

  • the present invention relates to a liquid crystal display manufacturing technology, and in particular to a photomask, a TFT glass substrate, and a method of fabricating the same.
  • the line spacing required for the pixel electrode design (the line distance refers to the distance between adjacent strip branches 3 in FIG. 3, the strip branch 3 itself)
  • the width of the line is also gradually reduced, and the line pitch of the pixel electrode is gradually reduced from the previous 5um-8um to 3um or less.
  • the industry can basically reach the 3um level (8.5 generation line).
  • how to increase the production capacity to 2.5um or even 2um on a substrate with such a large size of 2500mm*2200mm, which has been stable and comprehensively uniform has become a key issue for product upgrade and yield improvement in high-generation production lines.
  • FIG. 1 is a schematic structural view of a TFT glass substrate in the prior art. As shown in FIG. 1, a plurality of panel patterns 11 are arranged on the TFT glass substrate 10. The plurality of panel patterns 11 are arranged in an array, and the area other than the plurality of panel patterns 11 is a blank area 12.
  • the photoresist of the blank region 12 is exposed to light and dissolved by reaction with the developer.
  • the developing solution of the blank region 12 is required to react with more photoresist than the developer in the edge region of the panel pattern 11.
  • the developer on the entire TFT glass substrate 10 does not substantially flow, and the developer of the blank region 12 has a large decrease in the concentration of the developer due to the reaction, and the panel pattern is significantly reduced. 11
  • the concentration of the developer in the edge region forms a concentration difference.
  • the development effect of the edge region of the panel pattern 11 close to the blank region 12 is insufficient, thereby making the line pitch of the pixel electrode small, and for the positive photoresist, when the development is insufficient, The line width of the pixel electrode will be too large and the line pitch will be small.
  • FIG. 2 is a schematic diagram showing the line spacing distribution of the TFT glass substrate shown in FIG. 1.
  • the horizontal axis shown in Fig. 2 is the measurement point, and the vertical axis is the line distance measurement.
  • the position in the circle is the line distance measurement value of the pixel electrode in the edge region of the panel pattern 11. It is easy to see from the figure that the line distance of the pixel electrode in the edge region of the panel pattern 11 is small and relatively fluctuating.
  • the technical problem to be solved by the present invention is to provide a photomask, a TFT glass substrate, and a manufacturing method thereof, which solve the problem that the line pitch of the pixel electrode in the edge region of the panel pattern is small and the relative fluctuation is large.
  • a technical solution adopted by the present invention is to provide a photomask for partially blocking ultraviolet rays in an exposure step of TFT substrate manufacturing, including:
  • An additional pattern forming area is provided at the edge of the panel pattern forming area for forming an additional pattern on the edge of the panel pattern.
  • the panel graphic has a panel microstructure
  • the additional graphics have an additional microstructure
  • the additional microstructure and the panel microstructure are the same microstructure.
  • the additional microstructure is an extension of the panel microstructure.
  • the additional graphic is a rectangular frame, a sawtooth frame or a corrugated frame.
  • another technical solution adopted by the present invention is to provide a method for manufacturing a TFT glass substrate, comprising the following steps:
  • the glass substrate is cut to complete the fabrication of the TFT glass substrate.
  • a TFT glass substrate which is obtained after exposure, and includes:
  • the additional pattern is not fully exposed, so that the photoresist at the edge of the panel pattern that can participate in the development reaction is reduced.
  • the invention has the beneficial effects that, different from the prior art, the invention adds an additional pattern to the edge of the panel pattern in the exposure step, so that the photoresist at the edge of the panel pattern can participate in the development reaction, thereby reducing the edge of the panel graphic.
  • the uniformity of the microstructure features at the middle of the panel pattern and the micro-structure features at the middle of the panel pattern improve the problem that the line pitch of the pixel electrodes in the edge region of the panel pattern is small and relatively fluctuating.
  • FIG. 1 is a schematic structural view of a TFT glass substrate in the prior art
  • FIG. 2 is a schematic view showing a line pitch distribution of the TFT glass substrate shown in FIG. 1;
  • Fig. 3 is a schematic view showing the structure of a pixel electrode of a VA mode.
  • FIG. 4 is a schematic structural view of a photomask according to a preferred embodiment of the present invention.
  • Figure 5 is a flow chart showing a method of manufacturing a TFT glass substrate according to an embodiment of the present invention.
  • FIG. 6 is a schematic structural view of a TFT glass substrate according to an embodiment of the present invention.
  • Fig. 7 is a view showing the line pitch distribution of the TFT glass substrate shown in Fig. 6.
  • FIG. 3 is a VA (Vertical Schematic diagram of the pixel electrode of the Alignment mode.
  • the pixel electrode is designed in a "meter" shape, including a strip-shaped vertical trunk (main Trunk) 1.
  • a strip-shaped horizontal main rod 2 and strips 3 respectively presenting a certain angle with the horizontal trunk 2.
  • the width of the strip branch 3 itself is the line width, and the distance between the adjacent strip branches 3 is the line pitch of the pixel electrode.
  • FIG. 4 is a schematic structural view of a photomask according to a preferred embodiment of the present invention.
  • the photomask 200 provided by the present invention partially blocks ultraviolet rays in an exposure step for TFT substrate manufacturing, and the mask 200 includes a panel pattern forming region 210 and an additional pattern forming region 220.
  • the panel pattern forming area 210 is the same as the existing mask to form a panel pattern.
  • the additional pattern forming area 220 is a new structure with respect to the existing reticle, and is disposed at the edge of the panel pattern forming area 210 for forming an additional pattern at the edge of the panel pattern.
  • the panel graphic has a panel microstructure with an additional microstructure.
  • the microstructure can be referred to the pixel electrode shown in FIG. 3, and the pixel pitch shown in FIG. 3 is as low as 2.5 um or even 2 um.
  • the additional microstructures and the panel microstructures may be the same microstructure.
  • the panel microstructure includes a plurality of strip branches
  • the additional microstructure may also include a plurality of strip branches, and the line spacing of the plurality of strip branches of the panel microstructure and the line spacing of the plurality of strip branches of the additional microstructure the same.
  • the additional microstructure may be an extension of the panel microstructure. That is, with respect to the standard pattern to be formed, the reticle 200 provided by the present invention can form an enlarged pattern, and since the fluctuation of the line pitch is mainly concentrated on the edge adjacent to the blank area, the edge cutting is performed on the enlarged pattern. The part with large fluctuations in line spacing can be removed to obtain standard graphics.
  • the additional pattern may also have no microstructure, and is only used to block the blank area in the exposure step, so that the blank area is not entirely irradiated with ultraviolet rays, so that the photoresist in the blank area that can participate in the development reaction is reduced. It has been proved by experiments that as long as additional graphics are set in the blank area, the fluctuation range of the line spacing is reduced, and the line spacing uniformity is improved.
  • the additional graphic can be a rectangular frame, a sawtooth frame, or a corrugated frame.
  • FIG. 5 is a flow chart showing a method of manufacturing a TFT glass substrate according to an embodiment of the present invention.
  • FIG. 6 is a schematic structural view of a TFT glass substrate according to an embodiment of the present invention.
  • the present invention provides a method for manufacturing a TFT glass substrate, comprising the following steps:
  • steps S110 to S130 and S150 to S180 are substantially the same as the prior art, and may be referred to the prior art, and are not described in detail herein.
  • the method for manufacturing a TFT glass substrate provided by the present invention is different from the prior art in step S140.
  • the above-described photomask 200 is used for exposure, and not only a panel pattern but also an additional pattern is formed on the edge of the panel image when exposed, as shown in FIG.
  • the photomask 200 provided by the present invention can block the blank region 23 in the exposure step, so that the blank region 23 is not entirely irradiated with ultraviolet rays, so that the photoresist in the blank region 23 which can participate in the development reaction is reduced. It has been proved by experiments that as long as additional graphics are set in the blank area 23, the fluctuation range of the line spacing is reduced, and the uniformity is improved. As shown in FIG. 7, after the additional graphics are set, the fluctuation of the line spacing is from the prior art 0.6um. Reduced to 0.2 um of the present invention.
  • the additional graphic can be a rectangular frame, a sawtooth frame, or a corrugated frame.
  • the TFT glass substrate 20 shown in FIG. 6 is obtained after the step S140, and the TFT glass substrate 20 includes the panel pattern 21 and the additional pattern 22.
  • the additional pattern 22 is located at the edge of the panel pattern 21, and the additional pattern 22 is not fully exposed, so that the photoresist at the edge of the panel pattern 21 that can participate in the development reaction is reduced.
  • the panel pattern 21 has a panel microstructure with an additional microstructure.
  • the microstructure can be referred to the pixel electrode shown in FIG.
  • the additional microstructures and the panel microstructures may be the same microstructure.
  • the panel microstructure includes a plurality of strip branches
  • the additional microstructure may also include a plurality of strip branches, and the line spacing of the plurality of strip branches of the panel microstructure and the line spacing of the plurality of strip branches of the additional microstructure the same.
  • the additional microstructure may be an extension of the panel microstructure. That is, with respect to the standard pattern to be formed, the reticle 200 provided by the present invention can form an enlarged pattern, and since the fluctuation of the line pitch is mainly concentrated on the edge adjacent to the blank area 23, edge cutting is performed on the enlarged pattern. It can remove the part with large fluctuation of line distance and obtain standard graphics.
  • the additional pattern 22 may also have no microstructure, and is only used to block the blank region 23 in the exposure step, so that the blank region 23 is not entirely irradiated with ultraviolet rays, so that the photoresist in the blank region 23 that can participate in the development reaction is reduced.
  • the present invention adds an additional pattern to the edge of the panel pattern in the exposure step, so that the photoresist at the edge of the panel pattern can participate in the development reaction, thereby reducing the micro-edge at the edge of the panel pattern.
  • the uniformity of the microstructure features at the middle of the panel features and the improvement of the line spacing of the pixel electrodes in the edge region of the panel pattern are relatively large.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Geometry (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
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Abstract

一种光罩（200），用于TFT基板（20）制造的曝光步骤（S140）中部分地阻挡紫外线。该光罩包括面板图形形成区（210）和附加图形形成区（220），面板图形形成区用于形成面板图形（21），附加图形形成区设于面板图形形成区边缘，用于在面板图形边缘形成附加图形（22）。在TFT基板制造过程中，利用该光罩通过曝光步骤（S140）在面板图形边缘增设附加图形，可保证面板图形边缘处的微结构特征与面板图形中间处的微结构特征具有良好的均一性。

Description

光罩、TFT玻璃基板及其制造方法
【技术领域】
本发明涉及液晶显示器制造技术，特别是涉及一种光罩、TFT玻璃基板及其制造方法。
【背景技术】
随着液晶面板尺寸越来越大，为了达到更好的显示效果，像素电极设计所要求的线距（线距指附图3中相邻条状分支3之间的距离，条状分支3本身的宽度为线宽）也逐渐缩小，像素电极的线距也逐步从之前的5um-8um缩小至3um以下。受光刻及涂布显影设备能力的限制，目前业内基本可以达到3um水平（8.5代线）。但如何能够在2500mm*2200mm如此大的基板上，继续稳定且全面均一性很好的将生产能力提升至2.5um甚至2um，已成为高世代生产线中产品升级及良率提升的关键课题。
在目前的工艺技术下，当基板全面线距均值降至2.5um以下时，面板图形边缘区域的线距与面板中间区域的线距出现较明显的偏差，而由于光刻及涂布显影设备能力的限制，无法在相应位置进行调整处理，导致生产中该问题日益突出，且无法改善，并已成为产品升级及良率提升的瓶颈所在。
请参阅图1，图1是现有技术中一种TFT玻璃基板的结构示意图。如图1所示，TFT玻璃基板10上包括多个面板图形11，该多个面板图形11间隔阵列排列，除该多个面板图形11之外的区域是空白区12。
在现有技术中，该空白区12的光阻均接受曝光，并通过与显影液反应而溶解。在显影液均匀的铺满TFT玻璃基板10表面与经曝光的光阻反应时，该空白区12的显影液需反应的光阻会比面板图形11边缘区域的显影液需反应的光阻多。在显影液铺满TFT玻璃基板10之后，整个TFT玻璃基板10上面的显影液基本不再流动，而空白区12的显影液由于需反应的光阻较多，其浓度降低明显，并与面板图形11边缘区域的显影液浓度形成浓度差，由于扩散效应，使得贴近空白区12的面板图形11边缘区域显影效果不足，进而使得像素电极的线距偏小，对于正光阻而言，显影不足时，像素电极的线宽会偏大，线距会偏小。
请一并参阅图2，图2是图1所示的TFT玻璃基板的线距分布示意图。图2中所示的横轴是测量点位，纵轴是线距测量值。其中，圆圈内的位置是面板图形11边缘区域的像素电极的线距测量值，从图上容易看出，面板图形11边缘区域的像素电极的线距偏小，相对波动较大。
【发明内容】
本发明主要解决的技术问题是提供一种光罩、TFT玻璃基板及其制造方法，以解决面板图形边缘区域的像素电极的线距偏小，相对波动较大的问题。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种光罩，用于TFT基板制造的曝光步骤中部分地阻挡紫外线，包括：
面板图形形成区，用于形成面板图形；及
附加图形形成区，设于面板图形形成区边缘，用于在面板图形边缘形成附加图形。
其中，面板图形具有面板微结构，附加图形具有附加微结构。
其中，附加微结构与面板微结构为相同的微结构。
其中，附加微结构为面板微结构的延伸。
其中，附加图形为矩形框、锯齿框或波纹框。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种制造TFT玻璃基板的方法，包括以下步骤：
对玻璃基板进行洗净；
对玻璃基板进行沉积薄膜；
对玻璃基板进行光阻涂布；
对玻璃基板进行曝光，形成面板图形并在面板图边缘形成附加图形；
对玻璃基板进行显影；
对玻璃基板进行蚀刻；
对玻璃基板进行剥膜；及
对玻璃基板进行切割完成TFT玻璃基板制造。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种TFT玻璃基板，经曝光后制得，包括：
面板图形；及
附加图形，位于面板图形边缘；
附加图形非完全曝光，使得面板图形边缘处可参与显影反应的光阻减少。
本发明的有益效果是：区别于现有技术的情况，本发明通过曝光步骤中在面板图形边缘增设附加图形，使得面板图形边缘处可参与显影反应的光阻减少，由此可提升面板图形边缘处的微结构特征与面板图形中间处的微结构特征具的均一性，改善面板图形边缘区域的像素电极的线距偏小，相对波动较大的问题。
【附图说明】
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图，其中：
图1是 现有技术中一种TFT玻璃基板的结构示意图；
图2是 图1所示的TFT玻璃基板的线距分布示意图；
图3是 一种VA模式的像素电极的结构示意图。
图4是 本发明一优选实施例的光罩的结构示意图；
图5是 本发明一实施例的TFT玻璃基板的制造方法的流程图；
图6是 本发明一实施例的TFT玻璃基板的结构示意图；以及
图7是 图6所示的TFT玻璃基板的线距分布示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图3，图3是一种VA（Vertical Alignment）模式的像素电极的结构示意图。该像素电极的设计为“米”字型设计，包括条状的竖直主干（main trunk）1、条状的水平主杆2以及分别与水平主干2呈现一定夹角的条状分支（slit）3。条状分支3本身的宽度为线宽，相邻条状分支3之间的距离为像素电极的线距。
现有技术中，空白区12的大量光阻由于被曝光而会与大量显影液反应，造成面板图形边缘区域的显影液偏少，使得面板图形边缘区域的像素电极显影不足，像素电极的线距出现较窄的情况。整体而言，面板图形边缘区域的像素电极的线距相对于面板图形中间区域的像素电极的线距波动较大，影响产品良率。
有鉴于此，本发明提供一种光罩。请参阅图4，图4是本发明一优选实施例的光罩的结构示意图。
如图4所示，本发明提供的光罩200用于TFT基板制造的曝光步骤中部分地阻挡紫外线，该光罩200包括面板图形形成区210和附加图形形成区220。
其中，该面板图形形成区210和现有的光罩相同，用于形成面板图形。该附加图形形成区220相对于现有光罩是新增结构，其设于面板图形形成区210边缘，用于在面板图形边缘形成附加图形。
具体而言，该面板图形具有面板微结构，该附加图形具有附加微结构。该微结构可参考图3中所示的像素电极，图3中所示的像素电的线距低至2.5um甚至2um。
在本发明的实施例中，附加微结构与面板微结构可为相同的微结构。例如，面板微结构包括多个条状分支，附加微结构亦可包括多个条状分支，且面板微结构的多个条状分支的线距与附加微结构的多个条状分支的线距相同。
在本发明的实施例中，该附加微结构可为该面板微结构的延伸。即相对于要形成的标准图形，采用本发明提供的光罩200可形成一增大图形，由于线距的波动主要集中在与空白区相邻的边缘，因此，对增大图形进行边缘切割，可去掉线距波动较大的部分，获得标准图形。
当然，附加图形也可以没有微结构，仅用于在曝光步骤中阻挡空白区，让空白区不全部被紫外线照射，使得空白区中可参与显影反应的光阻减少。经实验证明，只要在空白区设置附加图形，就会降低线距的波动范围，提升线距均一性。该附加图形可为矩形框、锯齿框或波纹框。
接下来，请一并参阅图5和图6，其中，图5是本发明一实施例的TFT玻璃基板的制造方法的流程图；图6是本发明一实施例的TFT玻璃基板的结构示意图。
如图5所示，本发明提供一种TFT玻璃基板的制造方法，包括以下步骤：
S110，对玻璃基板进行洗净；
S120，对该玻璃基板进行沉积薄膜；
S130，对该玻璃基板进行光阻涂布；
S140，对该玻璃基板进行曝光，形成面板图形并在该面板图边缘形成附加图形；
S150，对该玻璃基板进行显影；
S160，对该玻璃基板进行蚀刻；
S170，对该玻璃基板进行剥膜；及
S180，对该玻璃基板进行切割完成TFT玻璃基板制造。
其中，步骤S110~ S130及S150~ S180与现有技术大致相同，可参考现有技术，此处不详述。
本发明提供的TFT玻璃基板的制造方法与现有技术的不同之处在于步骤S140。
具体而言，本发明提供的TFT玻璃基板的制造方法中，采用上述的光罩200进行曝光，曝光时不仅要形成面板图形，还要在面板图边缘形成附加图形，如图6所示。
通过本发明提供的光罩200可以在曝光步骤中阻挡空白区23，让空白区23不全部被紫外线照射，使得空白区23中可参与显影反应的光阻减少。经实验证明，只要在空白区23设置附加图形，就会降低线距的波动范围，提升均一性，如图7中所示，设置附加图形后，线距的波动范围从现有技术的0.6um降至本发明的0.2um。该附加图形可为矩形框、锯齿框或波纹框。
相应的， 采用本发明提供的TFT玻璃基板的制造方法，在步骤S140后会得到图6所示的TFT玻璃基板20，该TFT玻璃基板20包括面板图形21和附加图形22。
其中，该附加图形22位于该面板图形21边缘，该附加图形22非完全曝光，使得该面板图形21边缘处可参与显影反应的光阻减少。该面板图形21具有面板微结构，该附加图形22具有附加微结构。该微结构可参考图3中所示的像素电极。
在本发明的实施例中，附加微结构与面板微结构可为相同的微结构。例如，面板微结构包括多个条状分支，附加微结构亦可包括多个条状分支，且面板微结构的多个条状分支的线距与附加微结构的多个条状分支的线距相同。
在本发明的实施例中，该附加微结构可为该面板微结构的延伸。即相对于要形成的标准图形，采用本发明提供的光罩200可形成一增大图形，由于线距的波动主要集中在与空白区23相邻的边缘，因此，对增大图形进行边缘切割，可去掉线距波动较大的部分，获得标准图形。
当然，附加图形22也可以没有微结构，仅用于在曝光步骤中阻挡空白区23，让空白区23不全部被紫外线照射，使得空白区23中可参与显影反应的光阻减少。
综上所述，本领域技术人员容易理解，本发明通过曝光步骤中在面板图形边缘增设附加图形，使得面板图形边缘处可参与显影反应的光阻减少，由此可提升面板图形边缘处的微结构特征与面板图形中间处的微结构特征具的均一性，改善面板图形边缘区域的像素电极的线距偏小，相对波动较大的问题。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (15)

  1. 一种光罩，用于TFT基板制造的曝光步骤中部分地阻挡紫外线，其中，包括：
    面板图形形成区，用于形成面板图形；及
    附加图形形成区，设于所述面板图形形成区边缘，用于在所述面板图形边缘形成附加图形。
  2. 根据权利要求1所述的光罩，其中，所述面板图形具有面板微结构，所述附加图形具有附加微结构。
  3. 根据权利要求2所述的光罩，其中，所述附加微结构与所述面板微结构为相同的微结构。
  4. 根据权利要求2所述的光罩，其中，所述附加微结构为所述面板微结构的延伸。
  5. 根据权利要求1所述的光罩，其中，所述附加图形为矩形框、锯齿框或波纹框。
  6. 一种TFT玻璃基板的制造方法，其中，包括以下步骤：
    对玻璃基板进行洗净；
    对所述玻璃基板进行沉积薄膜；
    对所述玻璃基板进行光阻涂布；
    对所述玻璃基板进行曝光，形成面板图形并在所述面板图边缘形成附加图形；
    对所述玻璃基板进行显影；
    对所述玻璃基板进行蚀刻；
    对所述玻璃基板进行剥膜；及
    对所述玻璃基板进行切割完成TFT玻璃基板制造。
  7. 根据权利要求6所述的制造方法，其中，所述面板图形具有面板微结构，所述附加图形具有附加微结构。
  8. 根据权利要求7所述的制造方法，其中，所述附加微结构与所述面板微结构为相同的微结构。
  9. 根据权利要求7所述的制造方法，其中，所述附加微结构为所述面板微结构的延伸。
  10. 根据权利要求6所述的制造方法，其中，所述附加图形为矩形框、锯齿框或波纹框。
  11. 一种TFT玻璃基板，经曝光后制得，其中，包括：
    面板图形；及
    附加图形，位于所述面板图形边缘；
    所述附加图形非完全曝光，使得所述面板图形边缘处可参与显影反应的光阻减少。
  12. 根据权利要求11所述的TFT玻璃基板，其中，所述面板图形具有面板微结构，所述附加图形具有附加微结构。
  13. 根据权利要求12所述的TFT玻璃基板，其中，所述附加微结构与所述面板微结构为相同的微结构。
  14. 根据权利要求12所述的TFT玻璃基板，其中，所述附加微结构为所述面板微结构的延伸。
  15. 根据权利要求11所述的TFT玻璃基板，其中，所述附加图形为矩形框、锯齿框或波纹框。
PCT/CN2012/083202 2012-10-17 2012-10-19 光罩、tft玻璃基板及其制造方法 Ceased WO2014059660A1 (zh)

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