WO2014044392A1 - Dispositif de génération d'un rayonnement euv et procédé permettant de faire fonctionner ledit dispositif - Google Patents

Dispositif de génération d'un rayonnement euv et procédé permettant de faire fonctionner ledit dispositif Download PDF

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Publication number
WO2014044392A1
WO2014044392A1 PCT/EP2013/002817 EP2013002817W WO2014044392A1 WO 2014044392 A1 WO2014044392 A1 WO 2014044392A1 EP 2013002817 W EP2013002817 W EP 2013002817W WO 2014044392 A1 WO2014044392 A1 WO 2014044392A1
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
euv radiation
generating device
intermediate chamber
pressure
Prior art date
Application number
PCT/EP2013/002817
Other languages
German (de)
English (en)
Inventor
Martin Lambert
Andreas Enzmann
Original Assignee
Trumpf Laser- Und Systemtechnik Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trumpf Laser- Und Systemtechnik Gmbh filed Critical Trumpf Laser- Und Systemtechnik Gmbh
Priority to CN201380055789.4A priority Critical patent/CN104756607B/zh
Priority to KR1020157009566A priority patent/KR101679525B1/ko
Priority to JP2015532331A priority patent/JP6042550B2/ja
Priority to EP13765953.8A priority patent/EP2898756B1/fr
Publication of WO2014044392A1 publication Critical patent/WO2014044392A1/fr

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma

Definitions

  • the present invention relates to an EUV radiation generating device comprising: a vacuum chamber in which a target material can be arranged at a target position for generating EUV radiation, and a beam guiding chamber for guiding a laser beam from a driver laser device
  • the invention also relates to a method of operating such an EUV radiation generating device, comprising: generating EUV radiation by guiding the laser beam to that at the target position
  • An EUV radiation generating device with a beam guiding device for guiding a laser beam to a target position has become known from US 2011/0140008 A1.
  • the beam guiding device described therein serves to guide laser radiation, which was generated and amplified in a driver laser system.
  • a driver laser a C02 laser is usually used, as this allows for certain target materials, such as tin, a high conversion efficiency between the input power of the driver laser and the output power of the generated EUV radiation.
  • the beam guiding device guides the laser beam to a focusing element or to a focusing device, which serves to focus the laser beam at the target position.
  • a target material is provided, which passes during the irradiation with the laser beam in a plasma state and thereby emits EUV radiation.
  • a portion of the target material eg, tin
  • the laser beam is also reflected by optical elements which have a comparatively rough optical surface, as is caused by tin deposits.
  • optical elements which serve to reflect the EUV radiation generated at the target position, this is generally not the case, ie deposits of contaminants on these optical elements typically lead to a significant reduction in reflectivity for the EUV radiation used so that in the vacuum chamber or in this downstream modules, such as a lighting system and a projection system arranged optical elements should be protected from contaminants, especially against deposits of the target material.
  • an EUV radiation generating device of the aforementioned type and a method to develop the operation of the radiation generating device to the effect that the reliability of the EUV radiation generating device is increased.
  • an EUV radiation generating device in which an intermediate chamber between the vacuum chamber and the beam guiding chamber is mounted, wherein a gas-tight the intermediate chamber first window for the entry of the
  • Vacuum chamber are provided.
  • the vacuum chamber is sealed off from the environment by the second window. If the second window is destroyed or the seal of the second window is faulty, gas from the environment can enter the vacuum chamber
  • the window or its seal thus represent potential sources of leakage.
  • a slight leakage affects the environment in the vacuum chamber only as a simple error.
  • a sudden failure of the window with a large leakage leads to the influx of larger amounts of gas into the vacuum environment, which generates a gas flow there, which may possibly pass through the entire vacuum environment.
  • Due to a leaking window not only gas, but possibly also liquid substances, for example cooling water, which is used to cool the window, can reach the vacuum or the jet guidance chamber.
  • the window is located near the target position with the target material having a portion of the target material in the gas phase that is entrained in a sudden failure of the window of the gas stream.
  • This is particularly problematic because the target material or possibly other entrained contaminants can be transported by the EUV radiation generating device in a subsequent beam path in the EUV radiation illumination system or projection system, which typically has a very have clean environment. In the worst case, contamination of this environment with the target material can lead to a total failure of the EUV lithography system, since the target material attaches to the optical elements arranged there and these can possibly no longer be completely cleaned.
  • the beam-guiding chamber has a higher pressure than the environment of the EUV radiation generating device, typically in the vicinity of the EUV beam generating device
  • Atmospheric pressure (1013 mbar) prevails. Even with a comparatively low overpressure of e.g. 5 mbar or 10 mbar, components arranged in the beam guiding chamber, for example optics, can be effectively protected against soiling, which would otherwise enter the beam guiding chamber from the surroundings of the EUV radiation generating device.
  • the EUV radiation generating device has a supply device for supplying a test gas to the intermediate chamber and a leakage monitoring device for monitoring a leakage of the intermediate chamber on the basis of the supplied test gas.
  • a test gas in particular with an inert gas, for example with nitrogen or argon, is favorable in order to detect a leakage of the intermediate chamber and thus an insufficient seal between the Strahl Operations- chamber and the vacuum chamber.
  • an inert gas for example with nitrogen or argon
  • the detection or monitoring of the leakage can be done, for example, by monitoring the test gas pressure in the intermediate chamber and / or by the detection of the test gas, which is supplied to the intermediate chamber per unit time.
  • the supply device has a
  • Pressure generating device for acting on the test gas with a
  • the pressure generating device serves to provide the test gas with a constant (regulated) feed pressure.
  • the test gas passes through the throttle in the intermediate chamber, wherein the
  • Test gas pressure in the intermediate chamber in the leak-free operation corresponds to the feed pressure of the pressure generating device, so that in leak-free operation no test gas passes through the throttle in the intermediate chamber. If there is a leak, only a small amount of gas flows into the intermediate chamber via the throttle, so that a test gas pressure is established there which is less than the feed pressure.
  • the pressure difference or the gas flow generated by the pressure difference through the throttle are a measure of the leakage of the intermediate chamber.
  • the diameter of the orifice defines the sensitivity of the leakage monitoring, with the
  • a typical diameter of the throttle bore is in the present application in the order of about 0.1 mm.
  • the supply device has a gas flow sensor for determining a test gas flow fed to the intermediate chamber. As described above, based on the magnitude of the amount of gas flowing through the throttle per unit time (that is, the test gas flow), the size of the test gas flow.
  • the supply device typically has a supply line for the test gas.
  • the supply line can be selectively provided one or possibly more (small) openings. This opening (s) allow through
  • the EUV radiation generating device comprises at least one pressure sensor for determining a test gas pressure in the
  • the EUV radiation generating device has a
  • Vacuum generating device for generating an operating pressure in the vacuum chamber.
  • a vacuum generator typically serves a
  • Vacuum pump The operating pressure in the vacuum chamber in which the target material is disposed is typically on the order of less than 1.0 mbar.
  • a target material providing means which guides the target material along a predetermined path crossing the target position.
  • the EUV radiation generating device a focusing device for focusing the laser beam at the target position.
  • the focusing device may comprise a lens element which the
  • Transmitted laser radiation which is formed for example of zinc selenide.
  • reflecting optical elements can also be used for focusing the laser beam at the target position.
  • the focusing device is arranged in the vacuum chamber.
  • the beam-guiding chamber can supply a collimated laser beam to the vacuum chamber, which is first focused in the vacuum chamber. It is understood that the focusing can possibly also take place wholly or partly in the beam guiding chamber.
  • At least one of the windows is as
  • plane-parallel plate is formed, wherein preferably both windows are formed as plane-parallel plates. Due to the design as plane-parallel plates, the windows have virtually no optical effect on the typical perpendicular to the plate plane incident laser beam. Also, the material requirements of the
  • the thickness of the plates can be chosen comparatively low.
  • at least one of the windows is formed from diamond, preferably both windows are formed from diamond.
  • the use of (artificially manufactured) diamond windows has proven to be favorable, since the high laser power (> 1 kW) of the laser beam introduced heat due to the high thermal conductivity of the diamond material can be effectively dissipated.
  • the manufacturing costs for the diamond material are comparatively high, so that the thickness of the window should not be too large.
  • the beam-guiding chamber has a device for widening the laser beam.
  • the CO2 laser radiation used for the production of EUV radiation has a high radiation power (eg greater than 1 kW), so that it is favorable to use comparatively large beam diameters in order to control the intensity of the laser radiation as it passes through
  • Another aspect of the invention relates to a method of operating the EUV radiation generating device of the type mentioned above, comprising:
  • a pressure drop in the intermediate chamber may be detected, indicating destruction of one of the two windows.
  • Countermeasure also carried out a filling or loading of the vacuum environment with an inert gas.
  • An increased leakage of the intermediate chamber may be due to poor contact between the window and a holder for the window, In particular, serving as a seal bearing surface or contact surface of the socket are generated. Such inadequate mechanical contact may be an indication of a change in the abutment surface and thus an impediment to heat transfer from the window to the material of the fixture which serves as a heat sink for the window.
  • An insufficiently cooled window eg made of diamond, heats up relatively quickly due to absorption and can be destroyed by overheating.
  • a warning can be output to an operator before the error threshold value is reached. In this way, for example, during maintenance work on the EUV radiation generating device, the seal or the socket of the window checked and possibly replaced or repaired.
  • Radiation generating device comprising a beam guiding chamber and a vacuum chamber and an intermediate chamber with a
  • the figure shows an EUV radiation generating device 1, which is a
  • Driver laser device 2 a beam guiding chamber 3 and a vacuum chamber 4 has.
  • a focusing device in the form of a focusing lens 6 is arranged to focus a CO 2 laser beam 5 at a target position Z.
  • the EUV radiation generating device 1 shown in FIG is substantially the same as that described in US 2011/0140008 A1, which is incorporated herein by reference. On the representation of measuring devices for monitoring the beam path of the laser beam 5 has been omitted for reasons of clarity.
  • the driver laser device 2 comprises a C02 beam source as well as a plurality
  • Amplifier for generating a laser beam 5 with high radiation power (> 1 kW).
  • Driver laser device 2 reference is made to US 2011/0140008 A1. Of the driver laser device 2, the laser beam 5 over a plurality of
  • the target material 13 is struck by the focused laser beam 5 and thereby converted into a plasma state, which serves to generate EUV radiation 14.
  • the target material 13 is supplied to the target position Z by means of a delivery device (not shown) which guides the target material along a predetermined path crossing the target position 6.
  • a device 15 for increasing a beam diameter of the laser beam 5 which has a first off-axis parabolic mirror 16 with a first, convexly curved reflecting surface and a second off-axis parabolic mirror 17 with a second, concavely curved reflecting beam Surface has.
  • the reflective surfaces of an off-axis parabolic mirror 16, 17 each form the off-axis segments of an (elliptical) paraboloid.
  • the term "off-axis" means that the reflective surfaces do not include the axis of rotation of the paraboloid (and therefore not the apex of the paraboloid).
  • an intermediate chamber 18 is arranged between the beam guiding chamber 3, more precisely its housing, and the vacuum chamber 4.
  • gas-tight final window 19 is mounted, which serves for the entrance of the laser beam 5 of the beam guiding chamber 3.
  • a second window 20 is attached to the vacuum chamber 4 facing housing wall of the intermediate chamber 18 and serves to exit the laser beam 5 from the intermediate chamber 18 in the vacuum chamber. 4
  • a vacuum pump 21 serves to generate an operating pressure p 2 in the
  • Vacuum chamber 4 which is in the fine vacuum range (usually at significantly less than 1, 0 mbar).
  • the operation of the vacuum chamber 4 under vacuum conditions is required because it would come in a residual gas environment with too high pressure to excessive absorption of the generated EUV radiation 14.
  • the beam-guiding chamber 3 or the interior formed in this is operated at a significantly higher pressure pi, which may be, for example, in the order of about 5 mbar above atmospheric pressure (1013 mbar).
  • the beam guiding chamber 3 is thus selectively pressurized with respect to the surroundings of the EUV jet generating device 1 to form the optical elements arranged in the beam guiding chamber 3
  • Transport modules of the EUV lithography system are essentially an illumination system for illuminating a structure-bearing mask and an imaging system for imaging the structure on the mask onto a photosensitive substrate (wafer).
  • the further assemblies or the optical elements arranged there can be contaminated by the target material, which may lead to a total failure of the EUV lithography system can lead.
  • the gas from the beam guiding chamber 3 can also be used to purify the gas from the beam guiding chamber 3 .
  • Cooling water enter the interior of the vacuum chamber 4 and there carry along residues or deposits of the target material 13 and transport these residues to other (not shown) assemblies of the EUV lithography system.
  • Amount of liquid can cause comparatively low. Nevertheless, it is beneficial to have a leak in the intermediate chamber 18, the
  • Test gas 24 which has a sketchgas- reservoir 25 as a test gas supply device containing the test gas 24, for example nitrogen or argon, and this provides po with a constant (possibly regulated) feed pressure.
  • the test gas 24 is connected via a
  • Supply line 27 of the intermediate chamber 18 is supplied.
  • a fixed throttle 26 is provided with a throttle bore, which limits the test gas flow into the intermediate chamber 18.
  • the pressure p in the intermediate chamber 18 coincides with the feed pressure p 0 and no test gas 24 flows through the feed line 27 into the intermediate chamber 18.
  • the pressure sensor 28 measures it theticiangas horrs p in the intermediate chamber 18 measured
  • the feed pressure po (and thus the test gas pressure p in the leak-free case) is greater than the pressure p in the jet guide chamber 3 and greater than the operating pressure P2 of the vacuum chamber 4 and may for example be about 1023 mbar.
  • test gas pressure p decreases in relation to the feed pressure p0. This can be evaluated by a leakage monitoring device 29, which for this purpose is connected to the pressure sensor 28 in signal communication stands. A signaling connection with the supply device 23 is not required if the leak detection device 29 access to a
  • Storage device has, in which the numerical value for the fixed predetermined or fixed to a fixed value feed pressure p 0 is stored.
  • the leakage monitoring device 29 in the figure is attached to the intermediate chamber 18 only by way of example and can also be arranged elsewhere in the EUV radiation generating device 1.
  • the leakage monitoring device 29 can conclude from the destruction of one of the windows 19, 20 by a sudden, strong pressure drop in the intermediate chamber 18, by comparing the measured für versa p in the intermediate chamber 18 with an error threshold value for scholar vers p becomes. Does that fall
  • Test gas pressure p below the error threshold countermeasures are immediately introduced to protect against the contamination in the vacuum chamber 4 and in arranged in this further vacuum chambers arranged optical elements (see above).
  • the leakage monitoring device 29 reacts with a suitably selected diameter of the throttle bore (eg, about 0.1 mm) very sensitive to small
  • the detection of small amounts of leakage can provide an indication that undefined states on the components of the beam-guiding chamber 3
  • test gas flow dv / dt of the test gas 24 flowing through the feed line 27 can also take place with the aid of a gas flow sensor 30.
  • the test gas flow dv / dt disappears without leakage, since in this case the feed pressure p 0 and the pressure p in the intermediate chamber 18 coincide.
  • the test gas flow increases with decreasing test gas pressure p in the intermediate chamber 18 (corresponding to an increasing pressure difference between the feed pressure po and the test gas pressure p in the intermediate chamber 18).
  • the test gas flow dv / dt can also be compared by the leakage monitoring device 29 with an error threshold value or with a warning threshold value in order to detect an error case or to issue a warning.
  • Changes in the pressure p in the intermediate chamber 18 can also be caused by temperature changes of the test gas 24. This could possibly lead to an error message, without actually occurring a leakage in the intermediate chamber 18. To such temperature-induced pressure changes
  • a leak or a (small) opening can be selectively introduced into the supply line 27, via which the test gas 24 communicates with the environment for pressure equalization.
  • the reliability and reliability of the EUV radiation generating device can be significantly increased. It is understood that for leakage monitoring, if necessary, the supply of a test gas can be dispensed with by monitoring the gas pressure in the intermediate chamber directly by means of a pressure sensor.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)

Abstract

L'invention concerne un dispositif de génération d'un rayonnement EUV (1) comprenant : une chambre à vide (4) dans laquelle un matériau cible (13) peut être disposé dans une position cible (Z) pour générer un rayonnement EUV (14), ainsi qu'une chambre de guidage du faisceau (3) qui guide un faisceau laser (5) provenant d'un dispositif laser d'attaque (2) en direction de la position cible (Z). Le dispositif de génération d'un rayonnement EUV (1) comprend une chambre intermédiaire (18) qui est installée entre la chambre à vide (4) et la chambre de guidage du faisceau (3), une première fenêtre (19) fermant la chambre intermédiaire (18) de manière étanche au gaz pour l'entrée du faisceau laser (5), ainsi qu'une deuxième fenêtre (20) fermant la chambre intermédiaire (18) de manière étanche au gaz pour la sortie du faisceau laser (5) vers la chambre à vide (4). L'invention concerne également un procédé permettant de faire fonctionner le dispositif de génération d'un rayonnement EUV (1).
PCT/EP2013/002817 2012-09-24 2013-09-19 Dispositif de génération d'un rayonnement euv et procédé permettant de faire fonctionner ledit dispositif WO2014044392A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201380055789.4A CN104756607B (zh) 2012-09-24 2013-09-19 Euv辐射产生设备及其运行方法
KR1020157009566A KR101679525B1 (ko) 2012-09-24 2013-09-19 Euv 복사선 발생 장치 및 그 작동 방법
JP2015532331A JP6042550B2 (ja) 2012-09-24 2013-09-19 Ｅｕｖ放射線発生装置および該ｅｕｖ放射線発生装置のための運転法
EP13765953.8A EP2898756B1 (fr) 2012-09-24 2013-09-19 Dispositif de génération d'un rayonnement euv et procédé permettant de faire fonctionner ledit dispositif

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012217120.7A DE102012217120A1 (de) 2012-09-24 2012-09-24 EUV-Strahlungserzeugungsvorrichtung und Betriebsverfahren dafür
DE102012217120.7 2012-09-24

Publications (1)

Publication Number Publication Date
WO2014044392A1 true WO2014044392A1 (fr) 2014-03-27

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PCT/EP2013/002817 WO2014044392A1 (fr) 2012-09-24 2013-09-19 Dispositif de génération d'un rayonnement euv et procédé permettant de faire fonctionner ledit dispositif

Country Status (7)

Country Link
US (1) US8847182B2 (fr)
EP (1) EP2898756B1 (fr)
JP (1) JP6042550B2 (fr)
KR (1) KR101679525B1 (fr)
CN (1) CN104756607B (fr)
DE (1) DE102012217120A1 (fr)
WO (1) WO2014044392A1 (fr)

Cited By (1)

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WO2024028461A1 (fr) 2022-08-04 2024-02-08 Trumpf Laser Gmbh Système laser et procédé de fourniture d'un faisceau laser pulsé destiné à interagir avec un matériau cible

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WO2015120889A1 (fr) 2014-02-13 2015-08-20 Trumpf Laser- Und Systemtechnik Gmbh Dispositif et procédé pour protéger un environnement de vide contre les fuites, et dispositif de production d'un rayonnement euv
EP3652570B1 (fr) 2017-07-12 2023-04-12 TRUMPF Lasersystems for Semiconductor Manufacturing GmbH Dispositif de polarisation et dispositif de génération de faisceau euv comprenant un dispositif de polarisation
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Cited By (2)

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Publication number Priority date Publication date Assignee Title
WO2024028461A1 (fr) 2022-08-04 2024-02-08 Trumpf Laser Gmbh Système laser et procédé de fourniture d'un faisceau laser pulsé destiné à interagir avec un matériau cible
DE102022119609A1 (de) 2022-08-04 2024-02-15 Trumpf Laser Gmbh Lasersystem und Verfahren zur Bereitstellung eines zur Wechselwirkung mit einem Targetmaterial vorgesehenen gepulsten Laserstrahls

Also Published As

Publication number Publication date
KR101679525B1 (ko) 2016-11-24
CN104756607B (zh) 2017-02-22
KR20150060768A (ko) 2015-06-03
CN104756607A (zh) 2015-07-01
JP2015530617A (ja) 2015-10-15
EP2898756A1 (fr) 2015-07-29
US8847182B2 (en) 2014-09-30
EP2898756B1 (fr) 2017-01-04
US20140084186A1 (en) 2014-03-27
DE102012217120A1 (de) 2014-03-27
JP6042550B2 (ja) 2016-12-14

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