EP2898756B1 - Dispositif de génération d'un rayonnement euv et procédé permettant de faire fonctionner ledit dispositif - Google Patents

Dispositif de génération d'un rayonnement euv et procédé permettant de faire fonctionner ledit dispositif Download PDF

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Publication number
EP2898756B1
EP2898756B1 EP13765953.8A EP13765953A EP2898756B1 EP 2898756 B1 EP2898756 B1 EP 2898756B1 EP 13765953 A EP13765953 A EP 13765953A EP 2898756 B1 EP2898756 B1 EP 2898756B1
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chamber
euv radiation
pressure
intermediate chamber
radiation generating
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EP2898756A1 (fr
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Martin Lambert
Andreas Enzmann
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Trumpf Lasersystems for Semiconductor Manufacturing GmbH
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Trumpf Lasersystems for Semiconductor Manufacturing GmbH
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma

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  • the present invention relates to an EUV radiation generating apparatus comprising: a vacuum chamber in which a target material can be arranged at a target position for generating EUV radiation, and a beam guiding chamber for guiding a laser beam from a driver laser means in the direction of Target position, an intermediate chamber which is mounted between the vacuum chamber and the beam guiding chamber, a gas-tight the intermediate chamber final window for the laser beam from the beam guiding chamber, as well as the intermediate chamber gas-tight final second window for the exit of the laser beam into the vacuum chamber.
  • the invention also relates to a method of operating such an EUV radiation generating device, comprising: generating EUV radiation by guiding the laser beam to the target material located at the target position.
  • An EUV radiation generating device with a beam guiding device for guiding a laser beam to a target position is also known from US Pat US 2011/0140008 A1 known.
  • the beam guiding device described therein serves to guide laser radiation, which was generated and amplified in a driver laser system.
  • a driver laser a CO 2 laser is usually used, as this allows for certain target materials, for example, in tin, a high conversion efficiency between the input power of the driver laser and the output power of the generated EUV radiation.
  • the beam guiding device guides the laser beam to a focusing element or to a focusing device, which serves to focus the laser beam at the target position.
  • a target material is provided, which passes into a plasma state during the irradiation with the laser beam and thereby emits EUV radiation.
  • a portion of the target material eg, tin
  • the target material eg, tin
  • the laser beam is also reflected by optical elements which have a comparatively rough optical surface, as is caused by tin deposits.
  • an EUV radiation generating device of the type mentioned which has a supply device for supplying a test gas to the intermediate chamber and a leakage monitoring device for monitoring a leakage of the intermediate chamber based on the supplied test gas.
  • the vacuum chamber is sealed off from the environment by the second window. If the second window is destroyed or the seal of the second window is faulty, gas from the environment can flow into the vacuum chamber, since in the vacuum chamber, a lower pressure than in the environment, for example in the beam guide prevails.
  • the window or its seal thus represent potential sources of leakage.
  • a slight leakage affects the environment in the vacuum chamber only as a simple error.
  • a sudden failure of the window with a large leakage leads to the influx of larger amounts of gas into the vacuum environment, which generates a gas flow there, which may possibly pass through the entire vacuum environment. Due to a leaking window, not only gas, but possibly also liquid substances, for example cooling water, which is used to cool the window, can reach the vacuum or the jet guidance chamber.
  • the window is located near the target position with the target material having a portion of the target material in the gas phase that is entrained in a sudden failure of the window of the gas stream. This is particularly problematic because the target material or possibly further entrained contaminants from the EUV radiation generating device in a subsequent in the beam path of the EUV radiation illumination system or
  • Projection system can be transported, which typically have a very clean environment. In the worst case, contamination of this environment with the target material can lead to a total failure of the EUV lithography system, since the target material attaches to the optical elements arranged there and these can possibly no longer be completely cleaned.
  • the loading of the intermediate chamber with a test gas is favorable in order to detect a leakage of the intermediate chamber and thus an insufficient seal between the jet guiding chamber and the vacuum chamber.
  • a suitable inert test gas can reduce the influence of low leakage on the optical elements in the vacuum environment.
  • the detection or monitoring of the leakage can be done, for example, by monitoring the test gas pressure in the intermediate chamber and / or by the detection of the test gas, which is supplied to the intermediate chamber per unit time.
  • the beam-guiding chamber has a higher pressure than the environment of the EUV radiation generating device, with atmospheric pressure (1013 mbar) typically occurring in the vicinity of the EUV jet generating device. Even by a comparatively low overpressure of, for example, 5 mbar or 10 mbar can in the beam-guiding chamber arranged components, eg. Optics, effectively protected from contamination that would otherwise pass from the environment of the EUV radiation generating device in the beam guiding chamber.
  • the supply device has a pressure generating device for acting on the test gas with a feed pressure and a throttle arranged between the pressure generating device and the intermediate chamber.
  • the pressure generating device serves to provide the test gas with a constant (regulated) feed pressure.
  • the test gas passes through the throttle in the intermediate chamber, wherein the test gas pressure in the intermediate chamber in the leak-free operation corresponds to the feed pressure of the pressure generating device, so that no leak gas in the leak-free operation passes through the throttle in the intermediate chamber. If there is a leak, only a small amount of gas flows into the intermediate chamber via the throttle, so that a test gas pressure is established there which is less than the feed pressure.
  • the pressure difference or the gas flow generated by the pressure difference through the throttle are a measure of the leakage of the intermediate chamber.
  • a fixed throttle As a throttle, a fixed throttle is typically used, which has a throttle bore with a constant diameter.
  • the diameter of the orifice defines the sensitivity of the leakage monitoring, with the sensitivity of the decreasing diameter monitoring of the Throttle bore increases.
  • a typical diameter of the throttle bore is in the present application in the order of about 0.1 mm.
  • the supply device has a gas flow sensor for determining a test gas flow fed to the intermediate chamber. As described above, based on the amount of gas flowing through the throttle per unit time (i.e., the check gas flow), the magnitude of the leakage in the intermediate chamber can be deduced.
  • the supply device typically has a supply line for the test gas.
  • the supply line can be selectively provided one or possibly more (small) openings. These orifices make it possible to compensate for changes in pressure caused by changes in the temperature of the test gas that might otherwise cause a leakage of the intermediate chamber to be indicated without actually causing leakage.
  • the EUV radiation generating device comprises at least one pressure sensor for determining a test gas pressure in the intermediate chamber. Based on the sketchgasdrucks in the intermediate chamber, more precisely on the basis of a drop in fürgas horrins, can also be concluded that a leakage of the intermediate chamber. The leakage can be caused by a failure of the first window, the second window and / or the corresponding seals.
  • the EUV radiation generating device has a vacuum generating device for generating an operating pressure in the vacuum chamber.
  • a vacuum generating device typically serves a vacuum pump.
  • the operating pressure in the vacuum chamber in which the target material is disposed is typically on the order of less than 1.0 mbar.
  • a target material delivery device that guides the target material along a predetermined path that crosses the target position.
  • the EUV radiation generating device a focusing device for focusing the laser beam at the target position.
  • the focusing device may have a lens element which transmits the laser radiation and which is formed, for example, from zinc selenide.
  • reflecting optical elements can also be used for focusing the laser beam at the target position.
  • the focusing device is arranged in the vacuum chamber.
  • the beam-guiding chamber can supply a collimated laser beam to the vacuum chamber, which is first focused in the vacuum chamber. It is understood that the focusing can possibly also take place wholly or partly in the beam guiding chamber.
  • At least one of the windows is designed as a plane-parallel plate, wherein preferably both windows are formed as plane-parallel plates. Due to the design as plane-parallel plates, the windows have virtually no optical effect on the typical perpendicular to the plate plane incident laser beam.
  • the material requirement of the material transmitting the laser beam when using plane-parallel plates is low, since the diameter of the plate or disc used must be chosen only slightly larger than the beam diameter of the laser beam, wherein the thickness of the plates can be chosen comparatively small.
  • At least one of the windows is formed from diamond, preferably both windows are formed from diamond.
  • the use of (artificially manufactured) diamond windows has proven to be favorable, since the high laser power (> 1 kW) of the laser beam introduced heat due to the high thermal conductivity of the diamond material can be effectively dissipated.
  • the manufacturing costs for the diamond material are comparatively high, so that the thickness of the window should not be too large.
  • inadequate cooling can result in the thermal destruction of the diamond material (burnup).
  • the beam-guiding chamber has a device for widening the laser beam.
  • the CO 2 laser beam used for generating EUV radiation has a high radiation power (eg greater than 1 kW), so that it is favorable to use comparatively large beam diameters in order not to increase the intensity of the laser radiation as it passes through transmitting optical elements to be let.
  • the use of off-axis parabolic (oid) has proven to be beneficial, as for example in the US 2011/0140008 A1 is described.
  • a further aspect of the invention relates to a method for operating the EUV radiation generating device of the aforementioned type, comprising: monitoring a leakage of the intermediate chamber based on a beaugas horrs in the intermediate chamber and / or by means of a test gas flow of the intermediate chamber supplied test gas.
  • a pressure drop in the intermediate chamber may be detected, indicating destruction of one of the two windows.
  • an immediate shutdown of the EUV lithography system can take place, in which the valves or openings between different assemblies of the EUV lithography system, in which, for example, the illumination system or the projection system are arranged, are closed.
  • a filling or loading of the vacuum environment with an inert gas can take place as a countermeasure.
  • the monitoring of the intermediate chamber for a leak by means of the test gas also makes it possible to perceive a gradual change in the windows, so that countermeasures can be initiated or a warning can already be issued before the windows break or be destroyed.
  • An increased leakage of the intermediate chamber may be due to poor contact between the window and a holder for the window, In particular, serving as a seal bearing surface or contact surface of the socket are generated.
  • Such inadequate mechanical contact may be an indication of a change in the abutment surface and thus an impediment to heat transfer from the window to the material of the fixture which serves as a heat sink for the window.
  • An insufficiently cooled window eg made of diamond, heats up relatively quickly due to absorption and can be destroyed by overheating.
  • a warning can be output to an operator before the error threshold value is reached. In this way, for example, during maintenance work on the EUV radiation generating device, the seal or the socket of the window checked and possibly replaced or repaired.
  • the figure shows an EUV radiation generating device 1, which has a driver laser device 2, a beam guiding chamber 3 and a vacuum chamber 4.
  • a focusing device in the form of a focusing lens 6 is arranged to focus a CO 2 laser beam 5 at a target position Z.
  • the EUV radiation generating device 1 shown in FIG corresponds essentially to the structure, as in the US 2011/0140008 A1 which is incorporated by reference into the contents of this application.
  • On the representation of measuring devices for monitoring the beam path of the laser beam 5 has been omitted for reasons of clarity.
  • the driver laser device 2 comprises a CO 2 beam source and a plurality of amplifiers for generating a laser beam 5 with high radiation power (> 1 kW).
  • high radiation power > 1 kW
  • FIGS US 2011/0140008 A1 directed. From the driver laser device 2, the laser beam 5 is deflected over a plurality of deflecting mirrors 7 to 11 of the beam guiding chamber 3 and a further deflecting mirror 12 in the vacuum chamber 4 to the focusing lens 6, which focuses the laser beam 5 at the target position Z, at the Tin is arranged as a target material 13.
  • the target material 13 is struck by the focused laser beam 5 and thereby converted into a plasma state, which serves to generate EUV radiation 14.
  • the target material 13 is supplied to the target position Z by means of a delivery device (not shown) which guides the target material along a predetermined path crossing the target position 6.
  • a delivery device not shown
  • the target material is also on the US 2011/0140008 A1 directed.
  • a device 15 for increasing a beam diameter of the laser beam 5 which has a first off-axis parabolic mirror 16 with a first, convexly curved reflecting surface and a second off-axis parabolic mirror 17 with a second, concavely curved reflecting beam Surface has.
  • the reflective surfaces of an off-axis parabolic mirror 16, 17 each form the off-axis segments of an (elliptical) paraboloid.
  • the term "off-axis" means that the reflective surfaces do not include the axis of rotation of the paraboloid (and therefore not the apex of the paraboloid).
  • an intermediate chamber 18 is arranged between the beam guiding chamber 3, more precisely its housing, and the vacuum chamber 4.
  • gas-tight final window 19 is mounted, which serves for the entrance of the laser beam 5 of the beam guiding chamber 3.
  • a second window 20 is attached to the vacuum chamber 4 facing housing wall of the intermediate chamber 18 and serves to exit the laser beam 5 from the intermediate chamber 18 in the vacuum chamber. 4
  • a vacuum pump 21 is used to generate an operating pressure p 2 in the vacuum chamber 4, which is in the fine vacuum range (usually at significantly less than 1.0 mbar).
  • the operation of the vacuum chamber 4 under vacuum conditions is required because it would come in a residual gas environment with too high pressure to excessive absorption of the generated EUV radiation 14.
  • the beam-guiding chamber 3 or the interior formed in this is operated at a significantly higher pressure p 1 , which may be, for example, in the order of about 5 mbar above atmospheric pressure (1013 mbar).
  • the beam guiding chamber 3 is thus selectively pressurized with respect to the surroundings of the EUV jet generating device 1 in order to protect the optical elements arranged in the beam guiding chamber 3 from soiling.
  • the pressure difference between the beam guiding chamber 3 and the vacuum chamber 4 the gas from the beam guiding chamber 3 in the interior of the vacuum chamber 4 arrive and there Entrain residues or deposits of the target material 13 and transport them to other (not shown) assemblies of the EUV lithography system.
  • These assemblies are essentially an illumination system for illuminating a structure-bearing mask and an imaging system for imaging the structure on the mask onto a photosensitive substrate (wafer).
  • the further assemblies or the optical elements arranged there can be contaminated by the target material, which may lead to a total failure of the EUV lithography system can lead.
  • cooling water can also enter the interior of the vacuum chamber 4 and carry along therewith residues or deposits of the target material 13 and transport these residues to further assemblies (not illustrated) of the EUV lithography system.
  • a supply means 23 for a test gas 24 is provided, which has a test gas reservoir 25 as a test gas supply device containing the test gas 24, for example nitrogen or argon, and this with a constant (possibly. regulated) feed pressure p 0 provides.
  • the test gas 24 is supplied via a supply line 27 of the intermediate chamber 18.
  • a fixed throttle 26 is provided in the supply line with a throttle bore which limits the test gas flow into the intermediate chamber 18.
  • the pressure p in the intermediate chamber 18 coincides with the feed pressure p 0 and no test gas 24 flows through the feed line 27 into the intermediate chamber 18.
  • the pressure sensor 28 measures the pressure the fürgastiks p in the intermediate chamber 18 measured test gas pressure p is thus consistent with the feed pressure p 0 match.
  • the feed pressure p 0 (and thus the excgastik p in leak-free case) is greater than the pressure in the beam-guiding chamber 3 and greater than the operating pressure p 2 of the vacuum chamber 4 and may for example be about 1023 mbar.
  • the test gas pressure p decreases compared to the feed pressure p 0 .
  • This can be evaluated by a leakage monitoring device 29 which is in signal communication with the pressure sensor 28 for this purpose.
  • a signaling connection to the supply device 23 is not required if the leakage detection device 29 has access to a memory device in which the numerical value for the fixed or fixed to a fixed value feed pressure p 0 is stored. It goes without saying that the leakage monitoring device 29 in the figure is only attached to the intermediate chamber 18 by way of example and can also be arranged elsewhere in the EUV radiation generating device 1.
  • the leakage monitoring device 29 can conclude from the destruction of one of the windows 19, 20 by a sudden, strong pressure drop in the intermediate chamber 18, by comparing the measured fürgastik p in the intermediate chamber 18 with an error threshold value for für für p becomes. If the test gas pressure p falls below the error threshold, countermeasures are promptly initiated in order to protect the optical elements arranged in the vacuum chamber 4 or in further vacuum chambers connected therewith from contamination (see above).
  • the leakage monitoring device 29 reacts with a suitably selected diameter of the throttle bore (for example, about 0.1 mm) very sensitive to small leaks of the intermediate chamber 18, as for example in an incomplete sealing of the windows 19, 20 against the housing of the intermediate Chamber 18, more precisely against a holder provided there or a version may occur.
  • the detection of small amounts of leakage can provide an indication that undefined states are present on the components of the beam-guiding chamber 3.
  • Such an early warning of a possible destruction of the windows 19, 20 is particularly advantageous when using diamond as the window material, since a replacement required by the erosion or destruction of a diamond window 19, 20 is associated with considerable costs ,
  • the use of diamond as a window material is advantageous because of its high thermal conductivity.
  • test gas flow dv / dt of the test gas 24 flowing through the feed line 27 can also take place with the aid of a gas flow sensor 30.
  • the test gas flow dv / dt disappears without leakage, since in this case the feed pressure p 0 and the pressure p in the intermediate chamber 18 coincide.
  • the test gas flow increases with decreasing test gas pressure p in the intermediate chamber 18 (corresponding to an increasing pressure difference between the feed pressure p 0 and the educagas horr p in the intermediate chamber 18).
  • the test gas flow dv / dt can also be compared by the leakage monitoring device 29 with an error threshold value or with a warning threshold value in order to detect an error case or to issue a warning.
  • Changes in the pressure p in the intermediate chamber 18 can also be caused by temperature changes of the test gas 24. This could possibly lead to an error message, without actually occurring a leakage in the intermediate chamber 18.
  • a leak or a (small) opening can be introduced into the supply line 27 in a targeted manner, via which the test gas 24 communicates with the environment for pressure equalization.
  • the reliability and reliability of the EUV radiation generating device can be significantly increased. It is understood that for leakage monitoring, if necessary, the supply of a test gas can be dispensed with by monitoring the gas pressure in the intermediate chamber directly by means of a pressure sensor.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)

Claims (13)

  1. Dispositif de génération de rayonnement EUV (1) comprenant :
    une chambre à vide (4) dans laquelle un matériau cible (13) peut être disposé à une position cible (Z) pour générer un rayonnement EUV (14), ainsi qu'une chambre de guidage de faisceau (3) pour guider un faisceau laser (5) provenant d'un dispositif laser d'attaque (2) en direction de la position cible (Z),
    une chambre intermédiaire (18) qui est disposée entre la chambre à vide (4) et la chambre de guidage de faisceau (3),
    une première fenêtre (19) fermant la chambre intermédiaire (18) de manière étanche au gaz pour l'entrée du faisceau laser (5) depuis la chambre de guidage de faisceau (3) ainsi
    qu'une deuxième fenêtre (20) fermant la chambre intermédiaire (18) de manière étanche au gaz pour la sortie du faisceau laser (5) vers la chambre à vide (4),
    caractérisé par
    un dispositif d'amenée (23) pour amener un gaz de test (24) vers la chambre intermédiaire (18) ainsi que par un dispositif de surveillance de fuite (29) pour surveiller une fuite de la chambre intermédiaire (18) à l'aide du gaz de test (23) amené.
  2. Dispositif de génération de rayonnement EUV selon la revendication 1, caractérisé en ce que la chambre de guidage de faisceau (3) présente une pression (p1) plus élevée par rapport à l'environnement, en particulier par rapport à l'environnement à l'extérieur du dispositif de génération de rayonnement EUV (1).
  3. Dispositif de génération de rayonnement EUV selon la revendication 1 ou la revendication 2, dans lequel le dispositif d'amenée (23) est conçu pour générer dans la chambre intermédiaire (4) une pression de gaz de test (p) qui est supérieure à une pression (p1) dans la chambre de guidage de faisceau (3) et une pression de service (p2) dans la chambre à vide (4).
  4. Dispositif de génération de rayonnement EUV selon l'une des revendications précédentes, dans lequel le dispositif d'amenée (23) présente un dispositif de fourniture (25) pour fournir le gaz de test (24) à une pression d'alimentation (p0) ainsi qu'un étranglement (26) disposé entre le dispositif de génération de pression (25) et la chambre intermédiaire (18).
  5. Dispositif de génération de rayonnement EUV selon la revendication 4, dans lequel le dispositif d'amenée (23) présente un capteur de flux de gaz (30) pour déterminer un flux de gaz de test (dv/dt) amené à la chambre intermédiaire (18).
  6. Dispositif de génération de rayonnement EUV selon l'une des revendications précédentes, comprenant en outre : au moins un capteur de pression (28) pour déterminer une pression de gaz de test (p) dans la chambre intermédiaire (18).
  7. Dispositif de génération de rayonnement EUV selon l'une des revendications précédentes, comprenant en outre : un dispositif de génération de vide (21) pour générer une pression de service (p2) dans la chambre à vide (4).
  8. Dispositif de génération de rayonnement EUV selon l'une des revendications précédentes, comprenant en outre : un dispositif de focalisation (6) pour focaliser le faisceau laser (5) sur la position cible (Z).
  9. Dispositif de génération de rayonnement EUV selon la revendication 8, dans lequel le dispositif de focalisation (6) est disposé dans la chambre à vide (4).
  10. Dispositif de génération de rayonnement EUV selon l'une des revendications précédentes, dans lequel au moins une des fenêtres (19, 20) est réalisée sous la forme d'une plaque à faces planes et parallèles.
  11. Dispositif de génération de rayonnement EUV selon l'une des revendications précédentes, dans lequel au moins une des fenêtres (19, 20) est formée de diamant.
  12. Dispositif de génération de rayonnement EUV selon l'une des revendications précédentes, dans lequel la chambre de guidage de faisceau (3) présente un dispositif (15) pour élargir le faisceau laser (5).
  13. Procédé de fonctionnement d'un dispositif de génération de rayonnement EUV (1) selon l'une des revendications précédentes, consistant à :
    générer un rayonnement EUV (14) par guidage du faisceau laser (5) vers le matériau cible (13) disposé à la position cible (Z),
    caractérisé par l'étape consistant à
    surveiller une fuite de la chambre intermédiaire (18) à l'aide d'une pression de gaz de test (p) dans la chambre intermédiaire (18) et/ou à l'aide d'un flux de gaz de test (dv/dt) du gaz de test (24) amené à la chambre intermédiaire (18).
EP13765953.8A 2012-09-24 2013-09-19 Dispositif de génération d'un rayonnement euv et procédé permettant de faire fonctionner ledit dispositif Active EP2898756B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012217120.7A DE102012217120A1 (de) 2012-09-24 2012-09-24 EUV-Strahlungserzeugungsvorrichtung und Betriebsverfahren dafür
PCT/EP2013/002817 WO2014044392A1 (fr) 2012-09-24 2013-09-19 Dispositif de génération d'un rayonnement euv et procédé permettant de faire fonctionner ledit dispositif

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Publication Number Publication Date
EP2898756A1 EP2898756A1 (fr) 2015-07-29
EP2898756B1 true EP2898756B1 (fr) 2017-01-04

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US (1) US8847182B2 (fr)
EP (1) EP2898756B1 (fr)
JP (1) JP6042550B2 (fr)
KR (1) KR101679525B1 (fr)
CN (1) CN104756607B (fr)
DE (1) DE102012217120A1 (fr)
WO (1) WO2014044392A1 (fr)

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WO2019011419A1 (fr) 2017-07-12 2019-01-17 Trumpf Lasersystems For Semiconductor Manufacturing Gmbh Dispositif de polarisation et dispositif de génération de faisceau euv comprenant un dispositif de polarisation
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CN104756607B (zh) 2017-02-22
EP2898756A1 (fr) 2015-07-29
US20140084186A1 (en) 2014-03-27
KR20150060768A (ko) 2015-06-03
DE102012217120A1 (de) 2014-03-27
JP6042550B2 (ja) 2016-12-14
KR101679525B1 (ko) 2016-11-24
CN104756607A (zh) 2015-07-01
US8847182B2 (en) 2014-09-30
WO2014044392A1 (fr) 2014-03-27
JP2015530617A (ja) 2015-10-15

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