JP4981795B2 - ガス分散性が改良された破屑軽減システム - Google Patents
ガス分散性が改良された破屑軽減システム Download PDFInfo
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- JP4981795B2 JP4981795B2 JP2008516460A JP2008516460A JP4981795B2 JP 4981795 B2 JP4981795 B2 JP 4981795B2 JP 2008516460 A JP2008516460 A JP 2008516460A JP 2008516460 A JP2008516460 A JP 2008516460A JP 4981795 B2 JP4981795 B2 JP 4981795B2
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- 230000000116 mitigating effect Effects 0.000 title claims abstract description 81
- 230000005855 radiation Effects 0.000 claims abstract description 44
- 239000010409 thin film Substances 0.000 claims description 58
- 230000037361 pathway Effects 0.000 claims 1
- 239000002699 waste material Substances 0.000 claims 1
- 239000011888 foil Substances 0.000 abstract 3
- 239000007789 gas Substances 0.000 description 55
- 239000002245 particle Substances 0.000 description 12
- 210000002381 plasma Anatomy 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 9
- 230000004907 flux Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
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- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Toxicology (AREA)
- Plasma & Fusion (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
Description
5 供給配管、6 出口開口、7 バッファガス、8 放射線経路、9 破屑粒子の経路、10 薄膜トラップの中心軸、11 薄膜トラップ、12 外方限界ライン、13 内方限界ライン、14 ガスフローチャンネル、16 半径方向のガス供給用の開口を有する薄膜、17 接続経路、18 円周ガスフローチャンネル、19 円周ガス供給用の開口を有する薄膜。
Claims (12)
- 破屑軽減ユニット、および該破屑軽減ユニットにバッファガスをガス供給するための一つまたは複数の供給配管とを有する破屑軽減システムであって、
前記破屑軽減ユニットは、中心軸を有する薄膜トラップであり、放射線の直線通過が可能となるいくつかの経路を有し、
前記薄膜トラップは、前記中心軸から半径方向に延伸する複数の薄膜を有し、前記経路のいくつかにまで広がる、少なくとも一つの内部の空間を有し、
前記内部の空間は、前記薄膜内の開口により形成され、
前記供給配管は、前記空間に通じている、破屑軽減システム。 - 前記空間は、ガスフローチャンネルを構成し、該チャンネルは、前記破屑軽減ユニットと一体化されていることを特徴とする請求項1に記載の破屑軽減システム。
- 前記破屑軽減ユニットは、前記中心軸に対して実質的に回転対称であり、
前記空間は、前記中心軸の周りの円周方向に延在していることを特徴とする請求項1に記載の破屑軽減システム。 - 前記供給配管の出口部は、供給された前記バッファガスが、全ての供給配管用の前記空間内に、同じ円周方向に流れるように形成されていることを特徴とする請求項3に記載の破屑軽減システム。
- 前記一つの供給配管または前記複数の供給配管の第1の供給配管は、前記破屑軽減ユニットの前記中心軸を形成する第1の部分と、前記中心軸から前記空間内に延伸する一つもしくは複数の側配管を形成する第2の部分とを有することを特徴とする請求項3に記載の破屑軽減システム。
- 前記一つの供給配管または前記複数の供給配管の第1の供給配管は、前記中心軸を形成し、前記中心軸の方に延伸する前記空間に対する一つまたは複数の出口開口を有することを特徴とする請求項3に記載の破屑軽減システム。
- 前記第1の供給配管の前記側配管または前記出口開口は、前記中心軸から前記空間に、前記バッファガスを供給するように形成され、
前記複数の供給配管の第2の供給配管は、前記中心軸に向かう方向に、前記バッファガスを前記空間内に供給するように配置されることを特徴とする請求項5または6に記載の破屑軽減システム。 - 前記空間は、円周チャンネルおよび接続チャンネルを形成し、
前記円周チャンネルは、前記中心軸の周囲に円周状に延在し、前記接続チャンネルは、半径方向に延伸し、前記一つまたは複数の出口開口を前記円周チャンネルに接続することを特徴とする請求項6に記載の破屑軽減システム。 - 前記破屑軽減ユニットは、前記中心軸に対して回転可能に設置されることを特徴とする請求項3に記載の破屑軽減システム。
- 請求項1乃至9のいずれか一つに記載の破屑軽減システム用の破屑軽減ユニットであって、
当該破屑軽減ユニットは、放射線の直線通過が可能となるいくつかの経路と、該経路のいくつかにまで広がる内部の空間とを有し、
当該破屑軽減ユニットは、中心軸から半径方向に延伸する複数の薄膜を有し、
前記複数の薄膜は、該複数の薄膜に対して垂直に伸びる前記内部の空間を形成する開口を有することを特徴とする破屑軽減ユニット。 - 前記開口は、前記中心軸の周りの円周方向に延伸するガスフローチャンネルを形成する
ことを特徴とする請求項10に記載の破屑軽減ユニット。 - 前記開口は、円周チャンネルおよび接続チャンネルを形成し、
前記円周チャンネルは、前記中心軸の周囲に円周状に延在し、前記接続チャンネルは、半径方向に延伸し、前記中心軸のバッファガス用の出口開口を、前記円周チャンネルに接続することを特徴とする請求項10に記載の破屑軽減ユニット。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05105210 | 2005-06-14 | ||
EP05105210.8 | 2005-06-14 | ||
PCT/IB2006/051795 WO2006134512A2 (en) | 2005-06-14 | 2006-06-06 | Debris mitigation system with improved gas distribution |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008547193A JP2008547193A (ja) | 2008-12-25 |
JP4981795B2 true JP4981795B2 (ja) | 2012-07-25 |
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Application Number | Title | Priority Date | Filing Date |
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JP2008516460A Active JP4981795B2 (ja) | 2005-06-14 | 2006-06-06 | ガス分散性が改良された破屑軽減システム |
Country Status (8)
Country | Link |
---|---|
US (1) | US8873021B2 (ja) |
EP (1) | EP1896903B1 (ja) |
JP (1) | JP4981795B2 (ja) |
KR (1) | KR101298214B1 (ja) |
CN (1) | CN101218543A (ja) |
AT (1) | ATE510242T1 (ja) |
TW (1) | TWI395248B (ja) |
WO (1) | WO2006134512A2 (ja) |
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2006
- 2006-06-06 KR KR1020087000763A patent/KR101298214B1/ko active IP Right Grant
- 2006-06-06 US US11/917,207 patent/US8873021B2/en active Active
- 2006-06-06 JP JP2008516460A patent/JP4981795B2/ja active Active
- 2006-06-06 WO PCT/IB2006/051795 patent/WO2006134512A2/en active Application Filing
- 2006-06-06 CN CN200680021245.6A patent/CN101218543A/zh active Pending
- 2006-06-06 EP EP06756065A patent/EP1896903B1/en active Active
- 2006-06-06 AT AT06756065T patent/ATE510242T1/de not_active IP Right Cessation
- 2006-06-09 TW TW095120663A patent/TWI395248B/zh active
Also Published As
Publication number | Publication date |
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TWI395248B (zh) | 2013-05-01 |
EP1896903A2 (en) | 2008-03-12 |
EP1896903B1 (en) | 2011-05-18 |
US8873021B2 (en) | 2014-10-28 |
ATE510242T1 (de) | 2011-06-15 |
KR101298214B1 (ko) | 2013-08-22 |
WO2006134512A3 (en) | 2007-03-29 |
JP2008547193A (ja) | 2008-12-25 |
CN101218543A (zh) | 2008-07-09 |
TW200705506A (en) | 2007-02-01 |
US20080212044A1 (en) | 2008-09-04 |
WO2006134512A2 (en) | 2006-12-21 |
KR20080020680A (ko) | 2008-03-05 |
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