WO2014042829A1 - Placage de palladium par dépôt autocatalytique direct sur du cuivre - Google Patents

Placage de palladium par dépôt autocatalytique direct sur du cuivre Download PDF

Info

Publication number
WO2014042829A1
WO2014042829A1 PCT/US2013/055653 US2013055653W WO2014042829A1 WO 2014042829 A1 WO2014042829 A1 WO 2014042829A1 US 2013055653 W US2013055653 W US 2013055653W WO 2014042829 A1 WO2014042829 A1 WO 2014042829A1
Authority
WO
WIPO (PCT)
Prior art keywords
copper
palladium
reducing agent
copper surface
electroless palladium
Prior art date
Application number
PCT/US2013/055653
Other languages
English (en)
Inventor
Ernest Long
Ying Ding
Original Assignee
Macdermid Acumen, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macdermid Acumen, Inc. filed Critical Macdermid Acumen, Inc.
Publication of WO2014042829A1 publication Critical patent/WO2014042829A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/42—Coating with noble metals
    • C23C18/44—Coating with noble metals using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1655—Process features
    • C23C18/166—Process features with two steps starting with addition of reducing agent followed by metal deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • C23C18/1827—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment only one step pretreatment
    • C23C18/1834—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • C23C18/1837—Multistep pretreatment
    • C23C18/1844—Multistep pretreatment with use of organic or inorganic compounds other than metals, first

Definitions

  • the present invention relates generally to direct electroless palladium plating on copper substrates.
  • Electroless deposition is a process for depositing a thin layer or layers of a material(s) onto a substrate. Electroless deposition is typically accomplished by immersing the substrate in a bath that contains ions of the material to be deposited along with a chemical reducing agent, whereby some of the ions precipitate onto the substrate surface. In contrast to electroplating processes, electroless deposition does not normally require an externally applied electrical field to facilitate deposition. Thus, one advantage of electroless plating processes is that it can be selective, i.e., the material can be deposited only onto areas that demonstrate appropriate electrochemical properties, and thus, local deposition can be performed on areas that have been pretreated or catalyzed.
  • a molded interconnect device is an injection-molded thermoplastic element with integrated electronic circuit traces.
  • MTDs provide new opportunities for miniaturization of complex devices and integration of functionalities into one component reduces assembly costs and product volume.
  • MIDs combine a high temperature plastic substrate (or housing) with circuitry into a single element through selective metallization.
  • PCB printed circuit board
  • MID manufacturing processes electronic components are bonded to selected bonding areas of a copper structure produced on one or both sides of a substrate. Such interconnection must be reliable in terms of bond strength.
  • Wire bonding is one of the preferred processes for connecting the chip in interconnect packages.
  • One of the main wire bonding processes used for IC-substrates is gold wire bonding, in which a gold wire is bonded on a layer of electrolytically deposited nickel and gold. Alternatively, gold wire may be bonded onto a surface of nickel, palladium and gold.
  • wire bonds in microelectronic packages depends on the formation and development of intermetallic compounds at the interface between the bond wedge and the bond pad on the substrate, which is needed for successful bonding. Bonding either gold or copper-wires onto a copper bond pad surface is difficult mainly because of the tendency of the copper metallization to oxidize. Wire bonding portions are typically made of copper. If they remain bare or are externally exposed to the atmosphere and humidity, soldering and wire bonding properties of the copper layers can deteriorate due to oxidation or corrosion of the surface. In order to maintain soldering and/or wire bonding properties, bare or exposed copper layers are typically electroplated or electrolessly plated with nickel.
  • the plated nickel layer protects the copper from a corrosive environment for an extended period of time.
  • the nickel layer protects the copper from being dissolved by solder during the soldering assembly step by functioning as a diffusion barrier layer.
  • the plated nickel layer also acts as an interfacial film for prevention the copper layer and a subsequently plated gold layer, from diffusing into each other.
  • ENIG electroless nickel/immersion gold
  • MID molded interconnect devices
  • the present invention relates generally to a method of providing an electroless palladium deposit on a copper surface, the method comprising the steps of:
  • the electroless palladium, deposit can then be soldered to or wire bonded to.
  • the inventors of the present invention have discovered an improved process for catalyzing the copper surface through the use of a pre-dip solution, which as makes direct electroless palladium plating on copper possible.
  • the present invention relates generally to a method of providing an electroless palladium deposit on a copper surface, the method comprising the steps of:
  • the copper surface may comprise copper or copper alloy and may be a copper or copper alloy surface used in a printed circuit board or molded interconnect device.
  • the use of the electroless palladium produces a product that does not contain nickel or nickel alloy and in which the electroless palladium is deposited directly on the underlying copper substrate.
  • the use of the electroless palladium as described herein replaces the more commonly used nickel/gold finishes of the prior art.
  • the present invention utilizes a pre-dip composition comprising a reducing agent that catalyzes the copper surface for the subsequent deposition of electroless palladium thereon.
  • the reducing agent comprises a boron reducing agent selected from the group consisting of alkyl boranes, amine boranes, borane complexes, boron hydride compounds and combinations of one or more of the foregoing.
  • phosphorus-based reducing agents including hypophosphorous-acid-based reducing agents and their salts would be usable in the pre- dip composition.
  • suitable alkyl boranes include, but are not limited to, trimethylborane, methoxydiethylborane, and dibutylboron inflate.
  • suitable amine boranes include but are not limited to dimethylamine borane, t-butylamine borane, pyridine borane, triethylamine borane, tri-ethylamineborane-l,3-diaminopropane complex, ethylenediamine borane, 5-ethyl-2-methylpyridine borane. Of these amine boranes, dimethyamine borane is preferred.
  • borane complexes include, but are not limited to, borane-tetrahydrofuran complex, dimethyl sulfide borane, and ⁇ , ⁇ -diethylaniline borane, morpholine borane, and piperazine borane, among others.
  • the reducing agent comprises dimethyamine borane.
  • the reducing agent is preferably present in the pre-dip composition at a concentration of between about 2 and about 20 g/L, more preferably between about 5 and 15 g/L and most preferably at a concentration of between about 8 and about 10 g/L.
  • the bath of the pre-dip composition is preferably maintained at a temperature of between about 20 and about 30°C, more preferably at about room temperature.
  • the copper surface is contacted with the pre-dip composition in the bath for a period of time to catalyze the copper surface which is typically between about 30 seconds and about 2 minutes.
  • the copper surface may be contacted with the pre-dip composition by spray coating, curtain coating or immersion. In a preferred embodiment, the copper surface is contacted with the pre-dip composition by immersing the copper surface in the pre-dip composition for the desired period of time.
  • the now catalyzed copper surface is contacted with an electroless palladium plating solution.
  • the electroless palladium plating solution preferably comprises
  • the source of palladium ions is preferably a palladium salt which typically comprises a salt such as palladium chloride, palladium sulfate, palladium nitrate, palladium nitrite, and palladium acetate, by way of example and not limitation.
  • the concentration of the palladium salt in the pre-dip is preferably in the range of about 2 to about 6 g/L, more preferably about 3 to about 5 g/L.
  • the one or more complexing agents may typically include one or more nitrogenated complexing agents and suitable nitrogenated complexing agents include primary, secondary and tertiary amines as well as polyamines.
  • nitrogenated complexing agents may include, but are not limited to, ethylenediamine, 1,3- diaminopropane, l,2-bis(3-amino-propyl-amino)-ethane, 2-diethyl-amino-ethyl-amine, and diethylene triamine.
  • nitrogenated complexing agents include diethylene- triamine-penta-acetic acid, nitro-acetic acid, N-(2-hydroxyethyl)-ethylenediamine, ethylenediamine-N,N-diacetic acid, 2-(dimethylamino)-ethylamine, 1 ,2-diamino- propylamine, 1,3-diamino-propylamine, 3-(methylamino)-propylamine, 3- (dimethylamino)-propyl amine, 3 -(diethyamino)-propylamine, bis-(3 -aminopropyl)- amine, l,2-bis-(3-aminopropyl)-alkylamine, diethylenetriamine, triethylenetetramine, tetraethylene-pentamine, penta-ethylene-hexamine, and combinations of one or more of the foregoing.
  • the nitrogenated complexing agent comprises ethylenediamine.
  • concentration of the one or more nitrogenated complexing agents in the electroless palladium solution is preferably in the range of between about 2 to about 8 g/L, more preferably between about 3 to about 6 g/L.
  • the one or more complexing agents may also comprise a compound containing a carboxylic acid group.
  • the compound containing a carboxylic acid group is preferred because it forms a complex with the palladium ions.
  • the compound containing a carboxylic acid group include, but are not limited to, citric acid, acetic acid, propionic acid, lactic acid, ortho-hydroxybenzoic acid, oxalic acid, malonic acid, succinic acid, maleic acid, tartaric acid, ortho-phthalic acid, diglycolic acid, thioglycolic acid, thiodiglycolic acid, glycine, methylglycine, dimethylglycine, anthranilic acid, picolinic acid, quinolinic acid and combinations of one or more of the foregoing.
  • the concentration of the one or more complexing agents comprising a carboxylic acid group is preferably in the range of between about 8 and about 25 g/L, more preferably in the range of between about 10 and about 20 g
  • the electroless palladium plating solution also preferably comprises a reducing agent and the reducing agent may preferably be a hypophosphite reducing agent.
  • the reducing agent may preferably be a hypophosphite reducing agent.
  • Other reducing agents such as formaldehyde, hydrazine and boron reducing agents may also be usable in the compositions described herein, depending on the chemistry of the plating bath.
  • the electroless palladium plating solution also preferably comprises a pH buffering agent, which may comprise a suitable acid such as formic acid, acetic acid, malonic acid, succinic acid or citric acid.
  • a pH buffering agent which may comprise a suitable acid such as formic acid, acetic acid, malonic acid, succinic acid or citric acid.
  • various solvents including aliphatic alcohols as well as diols and polyols such as ethylene glycol and glycerine may also optionally, but preferably, be included in the electroless palladium plating solution. Mixtures of such solvents as well as blends with other solvents can also be used.
  • the concentration of the solvent may be in the range of about 30 to about 50 g/Lm more preferably, about 35 to about 45 g/L.
  • the electroless palladium plating solution may also comprise other additives that are usable in electroless plating solutions, including, but not limited to brighteners, stabilizers, surfactants, by way of example and not limitation.
  • the pH of the electroless palladium solution is preferably above 4, more preferably in the range of about 4 to about 10.
  • the electroless palladium bath is typically maintained a temperature of between about 45 and about 60°C, more preferably at a temperature of between about 50 and about 55°C.
  • the copper surface is contacted with the electroless palladium composition for a period of time to deposit the desired thickness of palladium.
  • the copper surface is contacted with the electroless palladium composition for about 2 to about 20 minutes, more preferably for about 5 to about 15 minutes.
  • immersion of a copper substrate in the electroless palladium composition for 4 minutes yielded an electroless palladium layer on the copper substrate having a thickness of about 8 microinches.
  • the copper substrate is preferably contacted with the electroless plating composition by immersing the copper substrate in the electroless plating composition for the desired period of time at the desired temperature.
  • a copper or copper alloy surface is first prepared for plating.
  • the copper or copper alloy surface may be prepared by treatment with an acid cleaner and then the surface copper oxides may be removed in a microetch bath.
  • the copper or copper alloy surface is contacted with a pre-dip composition comprising about 8 g/L of DMAB and then with an electroless palladium bath as described above in Table 1.
  • the copper or copper alloy surface is subjected to the following steps set forth in Table 2 to deposit an electroless palladium layer. Table 2. Steps in direct electroless palladium plating in accordance with the present invention.
  • Comparative Example 1 As in Example 1, the copper or copper alloy surface is prepared first prepared for plating. For example, the copper or copper alloy surface may be prepared by treatment with an acid cleaner and then the surface copper oxides may be removed in a microetch bath. Thereafter, the copper or copper alloy surface is subjected to the following process steps as set forth in Table 3 to apply an ENIG layer on the copper surface.
  • the electroless palladium process described in Example 1 has fewer process steps, resulting in shorter production times.
  • lower bath temperatures also translate into lower energy costs.
  • ENIG final finish The palladium finish gives desirable results for solderability, salt spray, sulfur tarnish, contact resistance, steam aging, paint and RF testing.
  • palladium baths are cyanide free, unlike many of the widely used gold baths.
  • electroless palladium process described herein the process is simple and costs are significantly reduced due to the removal of expensive gold metal and the running cost of electroless nickel. Finally, production times are reduced by nearly 70% with palladium as compared with ENIG.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemically Coating (AREA)

Abstract

L'invention concerne un procédé qui permet de fournir un dépôt de palladium autocatalytique direct sur une surface de cuivre. Le procédé consiste (a) à catalyser la surface de cuivre par application d'une composition d'immersion préalable à la surface de cuivre, la composition d'immersion préalable comportant un agent réducteur ; ensuite (b) à mettre en contact la surface de cuivre catalysée avec une composition de palladium autocatalytique pour déposer une couche de palladium sur la surface de cuivre.
PCT/US2013/055653 2012-09-11 2013-08-20 Placage de palladium par dépôt autocatalytique direct sur du cuivre WO2014042829A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/609,705 2012-09-11
US13/609,705 US20140072706A1 (en) 2012-09-11 2012-09-11 Direct Electroless Palladium Plating on Copper

Publications (1)

Publication Number Publication Date
WO2014042829A1 true WO2014042829A1 (fr) 2014-03-20

Family

ID=50233532

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2013/055653 WO2014042829A1 (fr) 2012-09-11 2013-08-20 Placage de palladium par dépôt autocatalytique direct sur du cuivre

Country Status (2)

Country Link
US (1) US20140072706A1 (fr)
WO (1) WO2014042829A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101617654B1 (ko) * 2013-08-23 2016-05-03 숭실대학교 산학협력단 무전해 도금법을 이용한 팔라듐 박막 제조방법
KR101469214B1 (ko) * 2014-05-19 2014-12-09 (주)오알켐 이온 팔라듐을 사용한 이물질 발생이 없는 다층 인쇄 회로 기판의 동도금 방법
US9551074B2 (en) * 2014-06-05 2017-01-24 Lam Research Corporation Electroless plating solution with at least two borane containing reducing agents
KR101733119B1 (ko) * 2014-08-25 2017-05-08 고지마 가가쿠 야쿠힌 가부시키가이샤 환원형 무전해 금도금액 및 그 도금액을 이용한 무전해 금도금 방법
KR102459744B1 (ko) * 2014-12-17 2022-10-26 아토테크 도이칠란트 게엠베하 운트 콤파니 카게 팔라듐의 무전해 도금을 위한 도금 배쓰 조성물 및 방법
JP7149061B2 (ja) * 2017-10-06 2022-10-06 上村工業株式会社 無電解パラジウムめっき液
CN113151813B (zh) * 2020-01-07 2023-08-29 苏州维业达科技有限公司 一种导电膜的修补方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6120639A (en) * 1997-11-17 2000-09-19 Macdermid, Incorporated Method for the manufacture of printed circuit boards
US6676919B1 (en) * 1999-04-07 2004-01-13 Basf Aktiengesellschaft Method for producing platinum metal catalysts
US7695981B2 (en) * 2005-05-13 2010-04-13 Siluria Technologies, Inc. Seed layers, cap layers, and thin films and methods of making thereof
US20110147072A1 (en) * 2008-10-27 2011-06-23 Tomoaki Yamashita Method for surface treatment of copper and copper
US20120118196A1 (en) * 2009-05-08 2012-05-17 Kojima Chemicals Co., Ltd. Electroless palladium plating solution

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6905622B2 (en) * 2002-04-03 2005-06-14 Applied Materials, Inc. Electroless deposition method
US20040043159A1 (en) * 2002-08-30 2004-03-04 Shipley Company, L.L.C. Plating method
US6794288B1 (en) * 2003-05-05 2004-09-21 Blue29 Corporation Method for electroless deposition of phosphorus-containing metal films onto copper with palladium-free activation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6120639A (en) * 1997-11-17 2000-09-19 Macdermid, Incorporated Method for the manufacture of printed circuit boards
US6676919B1 (en) * 1999-04-07 2004-01-13 Basf Aktiengesellschaft Method for producing platinum metal catalysts
US7695981B2 (en) * 2005-05-13 2010-04-13 Siluria Technologies, Inc. Seed layers, cap layers, and thin films and methods of making thereof
US20110147072A1 (en) * 2008-10-27 2011-06-23 Tomoaki Yamashita Method for surface treatment of copper and copper
US20120118196A1 (en) * 2009-05-08 2012-05-17 Kojima Chemicals Co., Ltd. Electroless palladium plating solution

Also Published As

Publication number Publication date
US20140072706A1 (en) 2014-03-13

Similar Documents

Publication Publication Date Title
WO2014042829A1 (fr) Placage de palladium par dépôt autocatalytique direct sur du cuivre
EP1322798B1 (fr) Bain et procede de depot autocatalytique d'argent sur des surfaces metalliques
WO2011149019A1 (fr) Procédé de fabrication d'une matière de base comportant un motif fin métallique plaqué or, matière de base comportant un motif fin métallique plaqué or, carte de circuit imprimé, interposeur et dispositif semi-conducteur
WO2010004856A1 (fr) Liquide fournissant un catalyseur pour placage au palladium
KR102096117B1 (ko) 플렉시블 기판 상의 무전해 니켈 인 합금 성막 방법
JP6216717B2 (ja) レーザー・ダイレクト・ストラクチャリング基板上に銅を無電解堆積するための活性剤水溶液およびその方法
CN103774127A (zh) 无电镀钯浴和无电镀钯方法
CN103314651A (zh) 用于获得对印刷电路板和ic基板上的铜线键合的钯表面修饰的方法
US9551073B2 (en) Method for depositing a first metallic layer onto non-conductive polymers
TW200920876A (en) Electroless palladium plating solution
JP4792045B2 (ja) パラジウム層を堆積する方法およびこのためのパラジウム浴
CN102482781B (zh) 锡和锡合金的无电镀覆方法
KR20160145533A (ko) 환원형 무전해 금도금액 및 그 도금액을 이용한 무전해 금도금 방법
TWI582266B (zh) 用於鈷合金無電沈積之鹼性鍍浴
JP5978587B2 (ja) 半導体パッケージ及びその製造方法
JP4831710B1 (ja) 無電解金めっき液及び無電解金めっき方法
KR102474143B1 (ko) 폴리이미드 수지 상의 금속 피막 형성 방법
TWI626332B (zh) 供無電電鍍之銅表面活化之方法
TWI395832B (zh) 增強表面可焊性的方法
CN1659312A (zh) 用于银沉积的酸性溶液及在金属表面上沉积银层的方法
EP3339472A2 (fr) Procédé de placage autocatalytique
TWI780677B (zh) 鍍金浴、鍍金最終飾面及提供其之方法
KR20200111203A (ko) 무전해 금 도금 욕
JP2003293147A (ja) 金めっき皮膜の後処理方法
JP2007119905A (ja) 無電解ニッケルめっき方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13837565

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13837565

Country of ref document: EP

Kind code of ref document: A1