WO2014034503A1 - Substrate processing device and device for producing liquid crystal display panel - Google Patents

Substrate processing device and device for producing liquid crystal display panel Download PDF

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Publication number
WO2014034503A1
WO2014034503A1 PCT/JP2013/072342 JP2013072342W WO2014034503A1 WO 2014034503 A1 WO2014034503 A1 WO 2014034503A1 JP 2013072342 W JP2013072342 W JP 2013072342W WO 2014034503 A1 WO2014034503 A1 WO 2014034503A1
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Prior art keywords
substrate
support member
processing apparatus
static electricity
substrate processing
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PCT/JP2013/072342
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French (fr)
Japanese (ja)
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原田　吉典
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シャープ株式会社
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Priority to JP2014532956A priority Critical patent/JP6001667B2/en
Priority to CN201380045564.0A priority patent/CN104603926B/en
Publication of WO2014034503A1 publication Critical patent/WO2014034503A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate

Definitions

  • the present invention relates to a substrate processing apparatus that suppresses generation of static electricity that occurs when a substrate is removed from the apparatus after the processing is completed.
  • a transparent substrate (hereinafter simply referred to as a substrate) on which an electronic component such as a thin film transistor, a transparent conductive film or the like is formed is disposed with a predetermined gap on the surface, and the gap is filled with a liquid crystal material. It has a structure.
  • an annealing process is performed as a process for forming a transistor on the substrate in the substrate processing apparatus.
  • the annealing process is a process of placing the substrate in a high temperature environment for a predetermined time. Since the annealing process is performed in the substrate processing apparatus, a quartz material having high heat resistance is used as a support member that supports the substrate.
  • the humidity around the substrate is lowered because the temperature around the substrate becomes high. Since the humidity around the substrate is low, when the substrate is unloaded from the substrate processing apparatus, peeling electrification is likely to occur when the substrate is peeled off (peeled) from the support member. Static electricity tends to accumulate on the substrate.
  • the ceramic pin (pointed member) formed on the support member (stage) A method for suppressing static electricity by supporting a substrate and reducing the contact area between the substrate and the support member has been proposed. Further, the publication also proposes a method of suppressing the generation of static electricity between the substrate and the support member (stage) by increasing the humidity of the substrate itself or the periphery of the substrate.
  • the liquid crystal display panel is getting larger and the substrate is getting bigger. As the substrate becomes larger, its weight increases. If the substrate is supported by ceramic pins as shown in Japanese Patent Laid-Open No. 2002-43396 to suppress static electricity, the contact area of the contact portion between the ceramic pins and the substrate is reduced. In the large substrate, the pressure acting on the contact portion of the substrate is increased, and the substrate is deformed and damaged. Therefore, a method of reducing the contact area with a sharp member such as a ceramic pin is adopted. Is difficult.
  • the substrate processing apparatus since water is sprayed when the humidity is increased, the substrate processing apparatus must have a function for processing water, and the substrate processing apparatus becomes large and complicated. Furthermore, if moisture remains on the surface of the substrate, it may cause display unevenness and transistor characteristic abnormality.
  • the present invention provides a substrate processing apparatus and a liquid crystal display panel manufacturing apparatus using the substrate processing apparatus that can suppress electrostatic breakdown of the substrate and suppress the generation of defective products with a simple configuration. Objective.
  • the present invention is a substrate processing apparatus that includes a rod-like substrate support member that supports a substrate, and performs a predetermined process on the substrate, wherein the substrate support member is at least a portion that contacts the substrate. It is characterized by comprising a static electricity suppressing part in which irregularities are formed.
  • the substrate processing apparatus when the substrate is moved or the substrate is processed, it is possible to suppress frictional charging or peeling charging at a portion of the substrate that contacts the substrate support member. is there.
  • the substrate support member is rod-shaped, the substrate is supported by a line or a surface instead of a point. Therefore, since the portion for supporting the substrate is wider than the substrate supporting member that supports the substrate with pins or the like, even if the weight of the substrate is increased, the force (stress) is less likely to concentrate on the substrate. Is less likely to deform or break.
  • the static electricity suppressing portion may be formed on the entire outer peripheral surface of the substrate support member. According to this structure, manufacture is simple compared with the case where the static electricity suppression part is partially formed.
  • At least the static electricity suppressing portion may be formed of a porous material.
  • At least the static electricity suppressing portion may be formed of a heat resistant material.
  • At least the static electricity suppressing portion of the substrate support member may be formed of a conductive material and grounded. According to this configuration
  • the static electricity suppressing portion may be formed with a concave portion aligned in the longitudinal direction of the substrate support member. According to this configuration, by providing the concave portion, it is possible to reduce the contact area between the substrate and the substrate support portion, and accordingly, it is possible to suppress the occurrence of frictional charge or peeling charge on the substrate. .
  • the concave portion may be a concave groove formed continuously in the circumferential direction of the substrate support member.
  • the concave groove may be spiral with respect to the substrate support member.
  • an example of a treatment to be performed on the substrate is an annealing treatment.
  • the present invention it is possible to provide a substrate processing apparatus and a liquid crystal display panel manufacturing apparatus using the substrate processing apparatus that can suppress electrostatic breakdown of the substrate and suppress generation of defective products with a simple configuration. it can.
  • FIG. 1 It is a schematic perspective view which shows an example of the substrate processing apparatus concerning this invention. It is sectional drawing of the board
  • FIG. 1 is a schematic perspective view showing an example of a substrate processing apparatus according to the present invention.
  • the substrate processing apparatus A is a processing apparatus that performs a predetermined process (here, an annealing process) on a liquid crystal glass substrate 1 (hereinafter referred to as a substrate 1) constituting a liquid crystal display panel.
  • a predetermined process here, an annealing process
  • the substrate processing apparatus A is not limited to the annealing process, and may perform other processes, and can perform the annealing process and other processes simultaneously or sequentially. May be.
  • the substrate processing apparatus A includes a substrate support member 2 that supports the substrate 1.
  • substrate support member 2 is a rod-shaped member which has a column shape, and supports the board
  • the substrate support member 2 has an axis extending in the horizontal direction and is arranged in parallel in the horizontal direction.
  • the substrate support member 2 does not necessarily have to be parallel.
  • the substrate support member 2 is firmly held by the frame 3 so as not to rotate and slide.
  • the substrate support member 2 supports the substrate 1 by contacting the bottom surface of the substrate 1. That is, in the substrate processing apparatus A, the substrate support member 2 supports the substrate 1 by placing the substrate 1 above the substrate support members 2 arranged side by side. As described above, the substrate support member 2 is a cylindrical member, and the substrate 1 is supported by a line by being arranged so that the axis is horizontal. Thereby, compared with the case where it supports by a point, it suppresses that a force concentrates on a support point, and the deformation
  • the substrate support member 2 and the frame 3 are configured to support a single substrate 1, but in practice, a plurality of substrates 1 are vertically moved up and down. And can be held.
  • the substrate 1 can be annealed.
  • the annealing process is a process necessary for forming a transistor, and is a process for placing the substrate 1 in a predetermined high temperature environment for a predetermined time.
  • the substrate support member 2 is required to stably support the substrate 1 in a high temperature environment during the annealing process. That is, the substrate support member 2 needs to have heat resistance (it is difficult to be deformed or damaged even in a high temperature environment), and here, a cylindrical member made of quartz is used.
  • the substrate 1 when the substrate 1 is supported by two substrate support members 2, the substrate 1 is stably supported.
  • the substrate 1 when the substrate 1 is moved after the processing is completed, when the substrate 1 is peeled off (peeled) from the substrate support member 2, static electricity tends to be accumulated on the substrate 1 due to peeling charging. Further, depending on the processing on the substrate 1, friction may occur between the substrate 1 and the substrate support member 2, and static electricity may accumulate on the substrate 1 due to frictional charging.
  • the substrate processing apparatus A when the annealing process is performed, the temperature of the portion where the substrate 1 is disposed is increased, so that the relative humidity decreases. This also makes it easier for static electricity to occur.
  • the liquid crystal display panel has been increased in size and definition, and static electricity has accumulated on the substrate 1 and electrostatic discharge (ESD) has occurred and the problem of electrostatic breakdown has become more serious than before. For this reason, it is preferable to prevent static electricity from being generated in the substrate 1 as much as possible in the treatment (annealing treatment) of the substrate 1 constituting the large-sized or high-definition liquid crystal display panel.
  • FIG. 2 is a sectional view of a substrate support member used in the substrate processing apparatus shown in FIG.
  • substrate support member 2 is equipped with the static electricity suppression part 21 by which the fine unevenness
  • the static electricity suppressing portion 21 is formed with fine irregularities, and the substrate 1 and the substrate support member 2 are in contact with each other over a wide range. Therefore, when the substrate support member 2 supports the substrate 1, it is possible to suppress the force from being concentrated on a part of the substrate 1, and the substrate 1 from being deformed or damaged.
  • the substrate support member 2 provided with the static electricity suppressing portion 21 can be formed by blasting the surface of a round bar made of quartz. Further, the method is not limited to blasting, and a method of forming the substrate support member 2 having fine irregularities on the surface, such as a method of immersing a round bar made of quartz in a chemical, can be widely used. . Moreover, in the substrate processing apparatus A, the static electricity suppression part 21 which has fine unevenness
  • the static electricity suppression part 21 by forming the static electricity suppression part 21 and forming the contact area between the substrate 1 and the substrate support member 2 small, when the substrate 1 is removed from the substrate support member 2, the substrate 1 is triboelectrically charged and / or Accumulation of static electricity due to peeling electrification is suppressed. Thereby, the electrostatic breakdown by the electrostatic discharge of the board
  • the surface roughness Ra is preferably 0.6 ⁇ m or more.
  • the surface roughness Ra is preferably 0.8 ⁇ m to 1.2 ⁇ m in order to achieve both reduction of the charge amount of the substrate 1 and retention of the substrate 1.
  • the substrate support member 2 is a rod-shaped member made of quartz.
  • the substrate support member 2 may be formed of a ceramic having heat resistance. Since ceramics are porous, fine irregularities, that is, static electricity suppressing portions are provided on the surface in advance, and the step of forming the static electricity suppressing portions can be omitted.
  • the substrate support member 2 may not be an integrally molded body.
  • the static electricity suppression part may be formed of a material having irregularities on the surface and attached to a rod-shaped member.
  • the substrate support member 2 has a cylindrical shape (circular cross section), but is not limited to this, and an elliptical column shape (cross-sectional elliptical shape), a polygonal cross-sectional columnar shape, or the like. It is possible to widely adopt a shape that has a small contact area with 1 and can stably hold the substrate 1.
  • FIG. 3 is a schematic view of a substrate support member used in another example of the substrate processing apparatus according to the present invention.
  • the substrate support member 4 shown in FIG. 3 includes a static electricity suppressing portion 41 having a spiral groove 411 on the outer peripheral surface.
  • the contact area between the substrate support member 4 and the substrate 1 can also be reduced by using the substrate support member 4 provided with such a spiral concave groove 411.
  • the concave groove 411 has a V-shaped cross section, but is not limited thereto, and a shape capable of forming a discontinuous portion on the surface (for example, a rectangular cross section, a cross section) Semi-circular shape) can be widely adopted.
  • FIG. 4 is a view showing another example of the substrate support member shown in FIG. Note that fine irregularities may be formed on the surface of the static electricity suppressing portion 42. Even with this configuration, it is possible to effectively suppress static electricity generated on the substrate 1 as with the substrate support member 4 shown in FIG.
  • FIG. 5 is a view showing still another example of the substrate processing apparatus according to the present invention.
  • the substrate processing apparatus B shown in FIG. 5 includes a substrate support member 5 and a frame 6 that holds the substrate support member 5.
  • the substrate support member 5 shown in FIG. 5 is formed of a material having heat resistance and conductivity (for example, SiC or the like).
  • the frame 6 is also formed of a metal having high heat resistance, and the substrate support member 5 and the frame 6 are in direct contact with each other to be in a conductive state. As shown in FIG. 5, in the substrate processing apparatus B, the frame 6 is grounded. Thereby, the substrate support member 5 is also grounded.
  • Example 1 The effect of the substrate support member used in the substrate processing apparatus according to the present invention was confirmed by actually measuring the charge amount of the substrate.
  • a substrate support member in which the surface of a quartz cylinder was blasted was used as an example, and a quartz column was used as a substrate support member as a comparative example.
  • FIG. 6 is a schematic diagram showing an experimental method.
  • the substrate used in the experiment is a glass substrate assuming a liquid crystal display panel.
  • the substrate supporting members are arranged in parallel so that a rectangular plate-shaped glass substrate of 730 mm ⁇ 920 mm can be supported.
  • the substrate support member is held by a plastic frame.
  • contact separation was repeated a predetermined number of times, and the surface charge amount at a plurality of points on the substrate at that time was measured.
  • the measurement points are both end portions and the central portion of the portion in contact with each substrate support member. As shown in FIG. 6, the numbers (1) to (6) are given. Then, the surface charge amount at each point was detected every time the contact separation was repeated 10 times.
  • FIG. 7 is a diagram illustrating a change in the average value of the surface charge amount according to the number of times of contact and separation between the substrate support member and the substrate in Examples and Comparative Examples.
  • the vertical axis represents the surface charge amount (kV)
  • the horizontal axis represents the number of times of approach and separation between the substrate 1 and the substrate support member 2.
  • the contact area between the substrate and the substrate supporting member is small, and therefore, it can be said that peeling electrification is less likely to occur when the substrate and the substrate supporting member are separated from each other.
  • the contact area between the substrate and the substrate support member is large, every time contact and separation between the substrate and the substrate support member are performed, peeling charge is generated, and the charge generated at that time is accumulated. I can see that.
  • the substrate processing apparatus according to the present invention can suppress the charging of the substrate and suppress the generation of defective substrates due to electrostatic breakdown.
  • the said embodiment and Example have demonstrated the substrate processing apparatus which makes the object of processing the glass substrate used for a liquid crystal display panel, it is used for manufacture of solar cell panels etc. other than a liquid crystal display panel, for example. It can also be applied to a substrate.
  • the present invention can be used in a substrate manufacturing apparatus.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

The present invention is provided with a rod-shaped substrate support member (2) that supports a substrate (1), and the substrate support member (2) is provided with an anti-static section (21) at which corrugations are formed at least at the portion contacting the substrate (1).

Description

基板処理装置及び液晶表示パネル製造装置Substrate processing apparatus and liquid crystal display panel manufacturing apparatus
　本発明は、処理終了後、基板を装置から取り外すときに生じる静電気の発生を抑制する基板処理装置に関する。 The present invention relates to a substrate processing apparatus that suppresses generation of static electricity that occurs when a substrate is removed from the apparatus after the processing is completed.
　液晶表示パネルは、表面に薄膜トランジスタ等の電子部品、透明導電膜等を製膜した透明基板（以下、単に基板と称する）を所定の隙間をあけて配置し、その隙間に液晶材料が充填された構造を有している。 In a liquid crystal display panel, a transparent substrate (hereinafter simply referred to as a substrate) on which an electronic component such as a thin film transistor, a transparent conductive film or the like is formed is disposed with a predetermined gap on the surface, and the gap is filled with a liquid crystal material. It has a structure.
　このような液晶表示パネルを製造する場合、基板処理装置において、前記基板のトランジスタの形成プロセスとしてアニール処理が行われる。前記アニール処理は、前記基板を高温環境中に一定時間配置する処理である。前記基板処理装置では、前記アニール処理が行われるため、前記基板を支持する支持部材として、耐熱性が高い石英材料が用いられる。前記基板処理装置においてアニール処理を行う場合、前記基板の周囲が高温となることから、前記基板の周囲の湿度が下がる。前記基板の周囲の湿度が低いことから、前記基板の前記基板処理装置からの搬出時において、前記基板が前記支持部材から引きはがされる（剥離される）ときに剥離帯電が発生しやすくなり、前記基板に静電気が溜まりやすい。 When manufacturing such a liquid crystal display panel, an annealing process is performed as a process for forming a transistor on the substrate in the substrate processing apparatus. The annealing process is a process of placing the substrate in a high temperature environment for a predetermined time. Since the annealing process is performed in the substrate processing apparatus, a quartz material having high heat resistance is used as a support member that supports the substrate. When the annealing process is performed in the substrate processing apparatus, the humidity around the substrate is lowered because the temperature around the substrate becomes high. Since the humidity around the substrate is low, when the substrate is unloaded from the substrate processing apparatus, peeling electrification is likely to occur when the substrate is peeled off (peeled) from the support member. Static electricity tends to accumulate on the substrate.
　近年、液晶表示パネルは大型化、高精細化しており、従来よりも基板に静電気が溜まり、静電気放電（ＥＳＤ）が発生し静電破壊する問題が深刻になってきている。この原因として、前記基板に形成される配線が長くなって、アンテナ効果により電荷の影響を受けやすくなったことが挙げられる。また、静電破壊の発生箇所はトランジスタ部であることが多く、前記液晶表示パネルの高精細化によりトランジスタの数が増え、静電破壊する確率が増えたことも原因の一つと考えられる。そのため、大型及び（又は）高精細な液晶表示パネルを構成する基板では、基板になるべく静電気が発生しないようにすることが好ましい。 In recent years, liquid crystal display panels are becoming larger and higher definition, and static electricity is accumulated on the substrate, and electrostatic discharge (ESD) is generated and electrostatic breakdown is becoming more serious than before. The reason for this is that the wiring formed on the substrate is long and is easily affected by electric charges due to the antenna effect. In addition, the occurrence of electrostatic breakdown is often in the transistor portion, and it is considered that one of the causes is that the number of transistors has increased due to the high definition of the liquid crystal display panel, and the probability of electrostatic breakdown has increased. For this reason, it is preferable that static electricity is not generated as much as possible in a substrate constituting a large-sized and / or high-definition liquid crystal display panel.
　このような、剥離による基板に静電気が帯電するのを抑制する方法として、例えば、特開２００２－４３３９６号公報には、前記支持部材（ステージ）に形成されたセラミックピン（尖った部材）で前記基板を支持し、前記基板と前記支持部材との接触面積を減らすことで静電気を抑制する方法が提案されている。また、同公報には、基板自体或いは基板の周囲の湿度を高めることで、前記基板と前記支持部材（ステージ）との間の静電気の発生を抑制する方法も提案されている。 As a method for suppressing the static electricity from being charged on the substrate due to such peeling, for example, in Japanese Patent Application Laid-Open No. 2002-43396, the ceramic pin (pointed member) formed on the support member (stage) A method for suppressing static electricity by supporting a substrate and reducing the contact area between the substrate and the support member has been proposed. Further, the publication also proposes a method of suppressing the generation of static electricity between the substrate and the support member (stage) by increasing the humidity of the substrate itself or the periphery of the substrate.
特開２００５－１２８１２９号公報JP 2005-128129 A
　液晶表示パネルが大型化しており、前記基板も大型化してきている。前記基板は大型化するとその重量も大きくなる。そして、静電気を抑制するため特開２００２－４３３９６号公報に示すようなセラミックピンで基板を支持すると、セラミックピンと基板との接触部分の接触面積が小さくなる。前記大型の基板では、前記基板の接触部に作用する圧力が大きくなり、前記基板が変形、破損の原因となるためセラミックピンのような尖った部材により、接触面積を小さくする方法を採用することが難しい。 The liquid crystal display panel is getting larger and the substrate is getting bigger. As the substrate becomes larger, its weight increases. If the substrate is supported by ceramic pins as shown in Japanese Patent Laid-Open No. 2002-43396 to suppress static electricity, the contact area of the contact portion between the ceramic pins and the substrate is reduced. In the large substrate, the pressure acting on the contact portion of the substrate is increased, and the substrate is deformed and damaged. Therefore, a method of reducing the contact area with a sharp member such as a ceramic pin is adopted. Is difficult.
　また、前記基板自体或いは前記基板の周囲の湿度を上げる方法の場合、前記基板の表面に不純物が付着しやすくなり、前記基板の表面の清浄性が保てなくなる可能性がある。また、湿度を上げるとき水を噴霧するので、前記基板処理装置に水を処理するための機能を持たせなくてはならず、前記基板処理装置が大型化、複雑化してしまう。さらには、前記基板の表面に水分の付着跡が残ると、表示むらやトランジスタ特性異常の原因となる場合がある。 Further, in the case of the method of increasing the humidity of the substrate itself or the surroundings of the substrate, impurities are likely to adhere to the surface of the substrate, and the surface of the substrate may not be kept clean. Further, since water is sprayed when the humidity is increased, the substrate processing apparatus must have a function for processing water, and the substrate processing apparatus becomes large and complicated. Furthermore, if moisture remains on the surface of the substrate, it may cause display unevenness and transistor characteristic abnormality.
　そこで本発明は、簡単な構成で、前記基板の静電破壊を抑制し、不良品の発生を抑制することができる基板処理装置及び基板処理装置を用いた液晶表示パネル製造装置を提供することを目的とする。 Therefore, the present invention provides a substrate processing apparatus and a liquid crystal display panel manufacturing apparatus using the substrate processing apparatus that can suppress electrostatic breakdown of the substrate and suppress the generation of defective products with a simple configuration. Objective.
　上記目的を達成するため本発明は、基板を支持する棒状の基板支持部材を備え、前記基板に所定の処理を施す基板処理装置であって、前記基板支持部材は、少なくとも前記基板と接触する部分に凹凸が形成された静電気抑制部を備えていることを特徴とする。 In order to achieve the above object, the present invention is a substrate processing apparatus that includes a rod-like substrate support member that supports a substrate, and performs a predetermined process on the substrate, wherein the substrate support member is at least a portion that contacts the substrate. It is characterized by comprising a static electricity suppressing part in which irregularities are formed.
　この構成によると、前記基板と接触する部分に凹凸を有する前記静電気抑制部を備えることで、円滑な外周面を有する基板支持部材を用いる場合に比べて、前記基板と前記基板支持部材との接触面積が小さくなる。 According to this configuration, by providing the static electricity suppressing portion having irregularities in the portion that comes into contact with the substrate, contact between the substrate and the substrate support member can be achieved as compared with the case where a substrate support member having a smooth outer peripheral surface is used. The area becomes smaller.
　このことより、前記基板処理装置では、前記基板の移動を行う或いは前記基板の処理を行うとき、前記基板の前記基板支持部材と接触する部分での摩擦帯電や剥離帯電を抑制することが可能である。 Thus, in the substrate processing apparatus, when the substrate is moved or the substrate is processed, it is possible to suppress frictional charging or peeling charging at a portion of the substrate that contacts the substrate support member. is there.
　また、前記基板支持部材が棒状であることから、前記基板を点ではなく線或いは面で支持する。そのため、ピン等で基板を支持する基板支持部材に比べて、基板を支持する部分が広いので、前記基板の重量が大きくなったとしても、前記基板に力（応力）が集中しにくく、前記基板の変形や破損が発生しにくい。 Also, since the substrate support member is rod-shaped, the substrate is supported by a line or a surface instead of a point. Therefore, since the portion for supporting the substrate is wider than the substrate supporting member that supports the substrate with pins or the like, even if the weight of the substrate is increased, the force (stress) is less likely to concentrate on the substrate. Is less likely to deform or break.
　以上のことより、前記基板処理装置で前記基板の処理を行うことで、前記基板に帯電する静電気による静電破壊や、前記基板の重量による応力集中によって不良品の発生を抑えることが可能である。 As described above, by processing the substrate with the substrate processing apparatus, it is possible to suppress the occurrence of defective products due to electrostatic breakdown due to static electricity charged on the substrate or stress concentration due to the weight of the substrate. .
　上記構成において、前記静電気抑制部が前記基板支持部材の外周面全面に形成されていてもよい。この構成によると、前記静電気抑制部を部分的に形成する場合に比べて製造が簡単である。 In the above configuration, the static electricity suppressing portion may be formed on the entire outer peripheral surface of the substrate support member. According to this structure, manufacture is simple compared with the case where the static electricity suppression part is partially formed.
　上記構成において、少なくとも前記静電気抑制部が多孔質材料で形成されていてもよい。 In the above configuration, at least the static electricity suppressing portion may be formed of a porous material.
　上記構成において、少なくとも前記静電気抑制部が耐熱性を有する材料で形成されていてもよい。 In the above configuration, at least the static electricity suppressing portion may be formed of a heat resistant material.
　上記構成において、少なくとも前記基板支持部材の前記静電気抑制部が、導電性を有する材料で形成されているとともに、接地されていてもよい。この構成によると、 In the above configuration, at least the static electricity suppressing portion of the substrate support member may be formed of a conductive material and grounded. According to this configuration
　上記構成において、前記静電気抑制部に、前記基板支持部材の長手方向に並ぶ凹部が形成されていてもよい。この構成によると、前記凹部を備えることで、前記基板と前記基板支持部との接触面積を小さくすることができ、それだけ、前記基板で摩擦帯電や剥離帯電が発生するのを抑制することができる。 In the above configuration, the static electricity suppressing portion may be formed with a concave portion aligned in the longitudinal direction of the substrate support member. According to this configuration, by providing the concave portion, it is possible to reduce the contact area between the substrate and the substrate support portion, and accordingly, it is possible to suppress the occurrence of frictional charge or peeling charge on the substrate. .
　上記構成において、前記凹部は前記基板支持部材の周方向に連続して形成されている凹溝であってもよい。前記凹溝は前記基板支持部材に対し螺旋状であってもよい。 In the above configuration, the concave portion may be a concave groove formed continuously in the circumferential direction of the substrate support member. The concave groove may be spiral with respect to the substrate support member.
　上記構成において、前記基板に対して施す処理としてアニール処理を行うものを挙げることができる。 In the above configuration, an example of a treatment to be performed on the substrate is an annealing treatment.
　本発明によると、簡単な構成で、前記基板の静電破壊を抑制し、不良品の発生を抑制することができる基板処理装置及び基板処理装置を用いた液晶表示パネル製造装置を提供することができる。 According to the present invention, it is possible to provide a substrate processing apparatus and a liquid crystal display panel manufacturing apparatus using the substrate processing apparatus that can suppress electrostatic breakdown of the substrate and suppress generation of defective products with a simple configuration. it can.
本発明にかかる基板処理装置の一例を示す概略斜視図である。It is a schematic perspective view which shows an example of the substrate processing apparatus concerning this invention. 図１に示す基板処理装置に用いられる基板支持部材の断面図である。It is sectional drawing of the board | substrate support member used for the substrate processing apparatus shown in FIG. 本発明にかかる基板処理装置の他の例に用いられる基板支持部材の概略図である。It is the schematic of the substrate supporting member used for the other example of the substrate processing apparatus concerning this invention. 図３に示す基板支持部材の他の例を示す図である。It is a figure which shows the other example of the board | substrate support member shown in FIG. 本発明にかかる基板処理装置のさらに他の例を示す図である。It is a figure which shows the further another example of the substrate processing apparatus concerning this invention. 実験方法を示す概略図である。It is the schematic which shows an experimental method. 実施例と比較例における基板支持部材と基板との接触離間回数による表面帯電量の平均値の変化を示す図である。It is a figure which shows the change of the average value of surface charge amount by the frequency | count of contact separation of the board | substrate support member and board | substrate in an Example and a comparative example.
　以下に本発明の実施形態について図面を参照して説明する。 Embodiments of the present invention will be described below with reference to the drawings.
（第１実施形態）
　図１は本発明にかかる基板処理装置の一例を示す概略斜視図である。図１に示すように、基板処理装置Ａは、液晶表示パネルを構成する液晶ガラス基板１（以下基板１とする）に所定の処理（ここでは、アニール処理）を施す処理装置である。また、基板処理装置Ａはアニール処理に限定されるものではなく、これ以外の処理を施すものであってもよいし、また、アニール処理と他の処理を同時又は順次行うことができるものであってもよい。 (First embodiment)
FIG. 1 is a schematic perspective view showing an example of a substrate processing apparatus according to the present invention. As shown in FIG. 1, the substrate processing apparatus A is a processing apparatus that performs a predetermined process (here, an annealing process) on a liquid crystal glass substrate 1 (hereinafter referred to as a substrate 1) constituting a liquid crystal display panel. Further, the substrate processing apparatus A is not limited to the annealing process, and may perform other processes, and can perform the annealing process and other processes simultaneously or sequentially. May be.
　基板処理装置Ａは、基板１を支持する基板支持部材２を備えている。図１に示すように、基板支持部材２は、円柱形状を有する棒状の部材であり、２本一組で基板１を支持する。基板支持部材２は、軸が水平方向に延びており、水平方向に平行に並んで配置されている。なお、基板支持部材２は必ずしも平行である必要はない。そして、基板支持部材２は、フレーム３によって回転、摺動しないようにしっかり保持されている。 The substrate processing apparatus A includes a substrate support member 2 that supports the substrate 1. As shown in FIG. 1, the board | substrate support member 2 is a rod-shaped member which has a column shape, and supports the board | substrate 1 by 1 set. The substrate support member 2 has an axis extending in the horizontal direction and is arranged in parallel in the horizontal direction. The substrate support member 2 does not necessarily have to be parallel. The substrate support member 2 is firmly held by the frame 3 so as not to rotate and slide.
　基板支持部材２は、基板１の底面と接触することで、基板１を支持している。すなわち、基板処理装置Ａでは、並んで配置された基板支持部材２の上方に基板１を載置することで、基板支持部材２が基板１を支持している。上述したように、基板支持部材２が円柱状の部材であるとともに、軸が水平になるように配置されていることで、基板１を線で支持する。これにより、点で支持する場合に比べて、支持点に力が集中するのを抑制し、基板１の変形、破損を抑制している。また、基板支持部材２が平行に配置されていることで、基板１は端部を基板支持部材２に水平状態を保って支持される。 The substrate support member 2 supports the substrate 1 by contacting the bottom surface of the substrate 1. That is, in the substrate processing apparatus A, the substrate support member 2 supports the substrate 1 by placing the substrate 1 above the substrate support members 2 arranged side by side. As described above, the substrate support member 2 is a cylindrical member, and the substrate 1 is supported by a line by being arranged so that the axis is horizontal. Thereby, compared with the case where it supports by a point, it suppresses that a force concentrates on a support point, and the deformation | transformation of the board | substrate 1 and the failure | damage are suppressed. Further, since the substrate support member 2 is arranged in parallel, the substrate 1 is supported by the substrate support member 2 while maintaining the end portion in a horizontal state.
　なお、図１の基板処理装置Ａにおいて、基板支持部材２及びフレーム３は、１枚の基板１を支持する構成となっているが、実際には、複数枚の基板１を上下に隙間を上げて保持することができる構成を有している。 In the substrate processing apparatus A shown in FIG. 1, the substrate support member 2 and the frame 3 are configured to support a single substrate 1, but in practice, a plurality of substrates 1 are vertically moved up and down. And can be held.
　基板処理装置Ａでは、基板１に対してアニール処理を施すことができる。ここで、アニール処理とは、トランジスタを形成するのに必要なプロセスであり、基板１を所定の高温環境下に一定時間配置する処理である。そして、基板支持部材２はアニール処理を行う間、高温環境下で基板１を安定して支持することが要求される。すなわち、基板支持部材２は耐熱性を有している（高温環境下でも変形、破損しにくい）必要があり、ここでは、石英で形成された円柱部材が用いられる。 In the substrate processing apparatus A, the substrate 1 can be annealed. Here, the annealing process is a process necessary for forming a transistor, and is a process for placing the substrate 1 in a predetermined high temperature environment for a predetermined time. The substrate support member 2 is required to stably support the substrate 1 in a high temperature environment during the annealing process. That is, the substrate support member 2 needs to have heat resistance (it is difficult to be deformed or damaged even in a high temperature environment), and here, a cylindrical member made of quartz is used.
　図１に示すように、２本の基板支持部材２で基板１を支持している場合、基板１は安定して支持される。一方で、処理終了後、基板１を移動させるとき、基板１が基板支持部材２から引きはがす（剥離する）とき、剥離帯電により基板１に静電気が溜まりやすい。また、基板１に対する処理によっては、基板１と基板支持部材２との間に摩擦が発生する場合があり、摩擦帯電により基板１に静電気が溜まる場合がある。また、基板処理装置Ａでは、アニール処理を行うとき、基板１を配置する部分の温度を高温にするため、相対湿度が低下する。このことからも、静電気が発生しやすくなっている。 As shown in FIG. 1, when the substrate 1 is supported by two substrate support members 2, the substrate 1 is stably supported. On the other hand, when the substrate 1 is moved after the processing is completed, when the substrate 1 is peeled off (peeled) from the substrate support member 2, static electricity tends to be accumulated on the substrate 1 due to peeling charging. Further, depending on the processing on the substrate 1, friction may occur between the substrate 1 and the substrate support member 2, and static electricity may accumulate on the substrate 1 due to frictional charging. Further, in the substrate processing apparatus A, when the annealing process is performed, the temperature of the portion where the substrate 1 is disposed is increased, so that the relative humidity decreases. This also makes it easier for static electricity to occur.
　前述したとおり、液晶表示パネルは大型化、高精細化しており、従来よりも基板１に静電気が溜まり、静電気放電（ＥＳＤ）が発生し静電破壊する問題が深刻化になってきている。このことから、大型あるいは高精細な液晶表示パネルを構成する基板１の処理（アニール処理）では、基板１になるべく静電気が発生しないようにすることが好ましい。 As described above, the liquid crystal display panel has been increased in size and definition, and static electricity has accumulated on the substrate 1 and electrostatic discharge (ESD) has occurred and the problem of electrostatic breakdown has become more serious than before. For this reason, it is preferable to prevent static electricity from being generated in the substrate 1 as much as possible in the treatment (annealing treatment) of the substrate 1 constituting the large-sized or high-definition liquid crystal display panel.
　そこで、基板処理装置Ａでは、基板１に静電気が発生するのを抑制する基板支持部材２を用いている。図２は図１に示す基板処理装置に用いられる基板支持部材の断面図である。図２に示すように、基板支持部材２の外周面は、表面に細かい凹凸が形成された静電気抑制部２１を備えている。このような静電気抑制部２１を備えることで、基板１と基板支持部材２との接触面積を小さくすることができる。 Therefore, the substrate processing apparatus A uses the substrate support member 2 that suppresses generation of static electricity on the substrate 1. FIG. 2 is a sectional view of a substrate support member used in the substrate processing apparatus shown in FIG. As shown in FIG. 2, the outer peripheral surface of the board | substrate support member 2 is equipped with the static electricity suppression part 21 by which the fine unevenness | corrugation was formed in the surface. By providing such a static electricity suppressing portion 21, the contact area between the substrate 1 and the substrate support member 2 can be reduced.
　また、静電気抑制部２１は細かい凹凸が形成されているものであり、基板１と基板支持部材２とは、広い範囲で接触している。そのため、基板支持部材２が基板１を支持したとき、基板１の一部に力が集中し、基板１が変形したり、破損したりするのを抑制することができる。 Further, the static electricity suppressing portion 21 is formed with fine irregularities, and the substrate 1 and the substrate support member 2 are in contact with each other over a wide range. Therefore, when the substrate support member 2 supports the substrate 1, it is possible to suppress the force from being concentrated on a part of the substrate 1, and the substrate 1 from being deformed or damaged.
　静電気抑制部２１を備えた基板支持部材２は、石英で形成された丸棒の表面にブラスト処理を施すことで形成することができる。また、ブラスト処理に限定されるものではなく、例えば、化学薬品に石英で形成された丸棒を浸漬させる方法等、表面に細かい凹凸を有する基板支持部材２を形成する方法を広く用いることができる。また、基板処理装置Ａでは、基板支持部材２の外周面全体に細かい凹凸を有する静電気抑制部２１を形成しているが、基板１と接触する部分のみに静電気抑制部２１を形成してもよい。 The substrate support member 2 provided with the static electricity suppressing portion 21 can be formed by blasting the surface of a round bar made of quartz. Further, the method is not limited to blasting, and a method of forming the substrate support member 2 having fine irregularities on the surface, such as a method of immersing a round bar made of quartz in a chemical, can be widely used. . Moreover, in the substrate processing apparatus A, the static electricity suppression part 21 which has fine unevenness | corrugation is formed in the whole outer peripheral surface of the substrate support member 2, However, You may form the static electricity suppression part 21 only in the part which contacts the board | substrate 1. FIG. .
　このように、静電気抑制部２１を形成し基板１と基板支持部材２との接触面積を小さく形成することで、基板支持部材２から基板１を取り外すときに、基板１に摩擦帯電及び（又は）剥離帯電による静電気の蓄積を抑制している。これにより、基板１の静電気放電による静電破壊を抑制することができる。 Thus, by forming the static electricity suppression part 21 and forming the contact area between the substrate 1 and the substrate support member 2 small, when the substrate 1 is removed from the substrate support member 2, the substrate 1 is triboelectrically charged and / or Accumulation of static electricity due to peeling electrification is suppressed. Thereby, the electrostatic breakdown by the electrostatic discharge of the board | substrate 1 can be suppressed.
　なお、この凹凸は、基板１の帯電量の減少するため、表面粗さＲａが０．６μｍ以上であることが好ましい、しかしながら、凹凸の表面粗さＲａが大きくなりすぎると、基板支持部材２自体の耐久性が低下しやすくなるとともに、基板１の基板支持部材２との接触部分に傷がつきやすくなる。このことから、基板１の帯電量の減少と基板１の保持を両立するため、表面粗さＲａを０．８μｍ～１．２μｍが好ましい。 In addition, since the unevenness reduces the charge amount of the substrate 1, the surface roughness Ra is preferably 0.6 μm or more. However, if the unevenness surface roughness Ra becomes too large, the substrate support member 2 itself In addition, the durability of the substrate 1 is likely to be lowered, and the contact portion of the substrate 1 with the substrate support member 2 is easily damaged. For this reason, the surface roughness Ra is preferably 0.8 μm to 1.2 μm in order to achieve both reduction of the charge amount of the substrate 1 and retention of the substrate 1.
　また、上述の実施形態では、基板支持部材２として石英製の棒状部材としているがこれに限定されるものではなく、高温環境下で変形、破損しにくい材質のものを広く採用することができる。また、例えば、基板支持部材２を耐熱性を有するセラミックスで形成してもよい。セラミックスは多孔質であるので、予め表面に細かい凹凸、すなわち、静電気抑制部を備えており、静電気抑制部を形成する工程を省くことが可能である。また、基板支持部材２は一体成型体でなくてもよい。例えば、表面に凹凸を有する材料で静電気抑制部を形成しておき、棒状の部材に取り付けてもよい。 In the above-described embodiment, the substrate support member 2 is a rod-shaped member made of quartz. However, the present invention is not limited to this. Further, for example, the substrate support member 2 may be formed of a ceramic having heat resistance. Since ceramics are porous, fine irregularities, that is, static electricity suppressing portions are provided on the surface in advance, and the step of forming the static electricity suppressing portions can be omitted. Further, the substrate support member 2 may not be an integrally molded body. For example, the static electricity suppression part may be formed of a material having irregularities on the surface and attached to a rod-shaped member.
　さらに、上述の実施形態では、基板支持部材２は円柱形状（断面円形状）としているが、これに限定されるものではなく、楕円柱形状（断面楕円形状）、断面多角形の柱状等、基板１との接触面積が小さく、安定して基板１を保持することができる形状を広く採用することが可能である。 Further, in the above-described embodiment, the substrate support member 2 has a cylindrical shape (circular cross section), but is not limited to this, and an elliptical column shape (cross-sectional elliptical shape), a polygonal cross-sectional columnar shape, or the like. It is possible to widely adopt a shape that has a small contact area with 1 and can stably hold the substrate 1.
（第２実施形態）
　本発明にかかる基板処理装置の他の例について図面を参照して説明する。図３は本発明にかかる基板処理装置の他の例に用いられる基板支持部材の概略図である。図３に示す基板支持部材４は、外周面にらせん状の凹溝４１１を備えた静電気抑制部４１を備えている。このような、らせん状の凹溝４１１を備えた基板支持部材４を用いることでも、基板支持部材４と基板１との接触面積を小さくすることができる。 (Second Embodiment)
Another example of the substrate processing apparatus according to the present invention will be described with reference to the drawings. FIG. 3 is a schematic view of a substrate support member used in another example of the substrate processing apparatus according to the present invention. The substrate support member 4 shown in FIG. 3 includes a static electricity suppressing portion 41 having a spiral groove 411 on the outer peripheral surface. The contact area between the substrate support member 4 and the substrate 1 can also be reduced by using the substrate support member 4 provided with such a spiral concave groove 411.
　このことから、基板１を基板支持部材４で支持した状態で、処理しているとき或いは基板１を基板支持部材４から取り外すときに発生する摩擦帯電や剥離帯電を抑制することが可能となっている。なお、基板支持部材４の外周面に螺旋状の凹溝４１１を形成しておき、さらに表面に細かい凹凸を形成して静電気抑制部４１としてもよい。このように構成することで、静電気の発生をより防ぐことが可能である。また、図３に示すように、凹溝４１１は断面Ｖ字状であるが、これに限定されるものではなく、表面に不連続部分を形成することができる形状（例えば、断面矩形状、断面半円状等）を広く採用することができる。 Accordingly, it is possible to suppress frictional charging or peeling charging that occurs when the substrate 1 is processed by the substrate support member 4 or when the substrate 1 is removed from the substrate support member 4. Yes. In addition, it is good also as the static electricity suppression part 41 by forming the helical concave groove 411 in the outer peripheral surface of the board | substrate support member 4, and forming a fine unevenness | corrugation in the surface further. With this configuration, generation of static electricity can be further prevented. In addition, as shown in FIG. 3, the concave groove 411 has a V-shaped cross section, but is not limited thereto, and a shape capable of forming a discontinuous portion on the surface (for example, a rectangular cross section, a cross section) Semi-circular shape) can be widely adopted.
　また、図４に示すように、基板支持部材４ｂの外周面に軸方向に並んで形成された環状の凹部４２１を備えた静電気抑制部４２を備えていてもよい。図４は図３に示す基板支持部材の他の例を示す図である。なお、静電気抑制部４２の表面に細かい凹凸が形成されていてもよい。この構成でも、図３に示す、基板支持部材４と同様、基板１に発生する静電気を効果的に抑制することが可能である。 Moreover, as shown in FIG. 4, the static electricity suppression part 42 provided with the cyclic | annular recessed part 421 formed along with the axial direction on the outer peripheral surface of the board | substrate support member 4b may be provided. FIG. 4 is a view showing another example of the substrate support member shown in FIG. Note that fine irregularities may be formed on the surface of the static electricity suppressing portion 42. Even with this configuration, it is possible to effectively suppress static electricity generated on the substrate 1 as with the substrate support member 4 shown in FIG.
　なお、その他の効果については、第１実施形態と同じである。 The other effects are the same as in the first embodiment.
（第３実施形態）
　本発明にかかる基板処理装置の他の例について図面を参照して説明する。図５は本発明にかかる基板処理装置のさらに他の例を示す図である。図５に示す基板処理装置Ｂは、基板支持部材５と、基板支持部材５を保持するフレーム６とを備えている。 (Third embodiment)
Another example of the substrate processing apparatus according to the present invention will be described with reference to the drawings. FIG. 5 is a view showing still another example of the substrate processing apparatus according to the present invention. The substrate processing apparatus B shown in FIG. 5 includes a substrate support member 5 and a frame 6 that holds the substrate support member 5.
　図５に示す基板支持部材５は、耐熱性及び導電性を有する材料（例えば、ＳｉＣ等）で形成されている。そして、フレーム６も耐熱性の高い金属で形成されており、基板支持部材５とフレーム６とは直接接触することで、導通状態となっている。そして、図５に示すように基板処理装置Ｂでは、フレーム６が接地されている。これにより、基板支持部材５も接地されている。 The substrate support member 5 shown in FIG. 5 is formed of a material having heat resistance and conductivity (for example, SiC or the like). The frame 6 is also formed of a metal having high heat resistance, and the substrate support member 5 and the frame 6 are in direct contact with each other to be in a conductive state. As shown in FIG. 5, in the substrate processing apparatus B, the frame 6 is grounded. Thereby, the substrate support member 5 is also grounded.
　このように、接地された基板支持部材５を用いることで、基板１を処理するとき或いは基板１を基板支持部材５から取り外すときの静電気が基板１に帯電するのを抑制することが可能である。 In this way, by using the grounded substrate support member 5, it is possible to prevent the substrate 1 from being charged with static electricity when processing the substrate 1 or removing the substrate 1 from the substrate support member 5. .
　なお、その他の効果については、第１実施形態と同じである。 The other effects are the same as in the first embodiment.
（実施例１）
　本発明にかかる基板処理装置に用いられる基板支持部材の効果について実際に基板の帯電量を測定して確認した。実験では、実施例として石英の円柱の表面にブラスト処理を施した基板支持部材を用いたものを用い、比較例として石英の円柱を基板支持部材として用いたものとを用いた。 (Example 1)
The effect of the substrate support member used in the substrate processing apparatus according to the present invention was confirmed by actually measuring the charge amount of the substrate. In the experiment, a substrate support member in which the surface of a quartz cylinder was blasted was used as an example, and a quartz column was used as a substrate support member as a comparative example.
　まず実験方法について説明する。図６は実験方法を示す概略図である。実験に用いた基板は、液晶表示パネルを想定し、ガラス基板である。図６に示すように、７３０ｍｍ×９２０ｍｍの長方形板状のガラス基板を支持できるように、基板支持部材を平行に配置している。このとき、基板支持部材はプラスチック製のフレームに保持されている。 First, the experimental method will be explained. FIG. 6 is a schematic diagram showing an experimental method. The substrate used in the experiment is a glass substrate assuming a liquid crystal display panel. As shown in FIG. 6, the substrate supporting members are arranged in parallel so that a rectangular plate-shaped glass substrate of 730 mm × 920 mm can be supported. At this time, the substrate support member is held by a plastic frame.
　このように配置された基板支持部材に基板を載せたのち、接触離間を所定回数繰り返し、その時の基板上の複数のポイントでの表面帯電量を計測した。測定ポイントは、各基板支持部材と接触している部分の両端部と中央部分である。図６に示しているように、（１）～（６）の番号を付している。そして、接触離間を１０回繰り返すごとに各ポイントでの表面帯電量を検出した。 After placing the substrate on the substrate support member arranged in this way, contact separation was repeated a predetermined number of times, and the surface charge amount at a plurality of points on the substrate at that time was measured. The measurement points are both end portions and the central portion of the portion in contact with each substrate support member. As shown in FIG. 6, the numbers (1) to (6) are given. Then, the surface charge amount at each point was detected every time the contact separation was repeated 10 times.
　実施例の結果を表１に比較例の結果を表２に示している。また、実施例及び比較例において接近離間回数ごとに、測定した表面帯電量の平均値を算出しその結果を図７に示している。図７は実施例と比較例における基板支持部材と基板との接触離間回数による表面帯電量の平均値の変化を示す図である。図７では縦軸が表面帯電量（ｋＶ）、横軸が基板１と基板支持部材２との接近離間回数である。
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000002
 The results of the examples are shown in Table 1, and the results of the comparative examples are shown in Table 2. Moreover, the average value of the measured surface charge amount was calculated for each approach and separation number in the examples and comparative examples, and the results are shown in FIG. FIG. 7 is a diagram illustrating a change in the average value of the surface charge amount according to the number of times of contact and separation between the substrate support member and the substrate in Examples and Comparative Examples. In FIG. 7, the vertical axis represents the surface charge amount (kV), and the horizontal axis represents the number of times of approach and separation between the substrate 1 and the substrate support member 2.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000002
　表１、表２及び図７を見ると、実施例では１００回程度の接触離間を繰り返しても、表面帯電量はほとんど変化していないことがわかる。一方で、比較例では、接触離間を繰り返すごとに、表面帯電量が増加していることがわかる。 Referring to Tables 1 and 2 and FIG. 7, it can be seen that the surface charge amount hardly changes even when contact and separation are repeated about 100 times in the example. On the other hand, in the comparative example, it can be seen that the surface charge amount increases as the contact separation is repeated.
　このことは、実施例では基板と基板支持部材の接触面積が小さくなっており、そのため、基板と基板支持部材との接触離間を行うときの剥離帯電が起きにくくなっているといえる。一方で、比較例では、基板と基板支持部材の接触面積が大きいので、基板と基板支持部材との接触離間が行われる毎に、剥離帯電が発生し、そのときに発生した電荷が蓄積されていっていることがわかる。 This means that in the embodiment, the contact area between the substrate and the substrate supporting member is small, and therefore, it can be said that peeling electrification is less likely to occur when the substrate and the substrate supporting member are separated from each other. On the other hand, in the comparative example, since the contact area between the substrate and the substrate support member is large, every time contact and separation between the substrate and the substrate support member are performed, peeling charge is generated, and the charge generated at that time is accumulated. I can see that.
　このことから、本発明にかかる基板処理装置では、基板の帯電を抑制し、静電破壊による不良基板が発生を抑制できることがわかった。 From this, it was found that the substrate processing apparatus according to the present invention can suppress the charging of the substrate and suppress the generation of defective substrates due to electrostatic breakdown.
　なお、上記実施形態及び実施例では、液晶表示パネルに用いられるガラス基板を処理の対象とする基板処理装置について説明しているが、液晶表示パネル以外、例えば、太陽電池パネル等の製造に用いられる基板にも適用可能である。 In addition, although the said embodiment and Example have demonstrated the substrate processing apparatus which makes the object of processing the glass substrate used for a liquid crystal display panel, it is used for manufacture of solar cell panels etc. other than a liquid crystal display panel, for example. It can also be applied to a substrate.
　以上、本発明の実施形態について説明したが、本発明はこの内容に限定されるものではない。また本発明の実施形態は、発明の趣旨を逸脱しない限り、種々の改変を加えることが可能である。 As mentioned above, although embodiment of this invention was described, this invention is not limited to this content. The embodiments of the present invention can be variously modified without departing from the spirit of the invention.
　本発明は基板の製造装置に利用することが可能である。 The present invention can be used in a substrate manufacturing apparatus.
　　　１　　基板
　　　２　基板支持部材
　　　２１　静電気抑制部
　　　３　フレーム
　　　１　　　携帯端末 DESCRIPTION OF SYMBOLS 1 Board | substrate 2 Board | substrate support member 21 Static electricity suppression part 3 Frame 1 Portable terminal

Claims (10)

  1. 　外周面で基板を支持する棒状の基板支持部材を備え、前記基板に所定の処理を施す基板処理装置であって、
    　前記基板支持部材が、少なくとも前記基板と接触する部分に凹凸が形成された静電気抑制部を備えていることを特徴とする基板処理装置。     A substrate processing apparatus comprising a rod-shaped substrate support member that supports a substrate on an outer peripheral surface, and performing a predetermined process on the substrate,
    The substrate processing apparatus, wherein the substrate support member includes a static electricity suppressing portion in which irregularities are formed at least in a portion in contact with the substrate.
  2. 　前記静電気抑制部が前記基板支持部材の外周面全面に形成されている請求項１に記載の基板処理装置。 The substrate processing apparatus according to claim 1, wherein the static electricity suppressing portion is formed on the entire outer peripheral surface of the substrate support member.
  3. 　少なくとも前記静電気抑制部が多孔質材料で形成されている請求項２に記載の基板処理装置。 3. The substrate processing apparatus according to claim 2, wherein at least the static electricity suppressing portion is made of a porous material.
  4. 　少なくとも前記静電気抑制部が耐熱性を有する材料で形成されている請求項１から請求項３のいずれかに記載の基板処理装置。 4. The substrate processing apparatus according to claim 1, wherein at least the static electricity suppressing portion is made of a heat-resistant material.
  5. 　少なくとも前記静電気抑制部が導電性を有する材料で形成されており、前記静電気抑制部が接地されている請求項１から請求項３のいずれかに記載の基板処理装置。 4. The substrate processing apparatus according to claim 1, wherein at least the static electricity suppressing portion is formed of a conductive material, and the static electricity suppressing portion is grounded.
  6. 　前記静電気抑制部に、前記基板支持部材の長手方向に並ぶ凹部が形成されている請求項１から請求項３のいずれかに記載の基板処理装置。 4. The substrate processing apparatus according to claim 1, wherein the static electricity suppressing portion is formed with recesses arranged in a longitudinal direction of the substrate support member.
  7. 　前記凹部が前記基板支持部材の周方向に連続して形成されている凹溝である請求項６に記載の基板処理装置。 The substrate processing apparatus according to claim 6, wherein the concave portion is a concave groove formed continuously in a circumferential direction of the substrate support member.
  8. 　前記凹溝が前記基板支持部材に対し螺旋状に形成されている請求項７に記載の基板処理装置。 The substrate processing apparatus according to claim 7, wherein the concave groove is formed in a spiral shape with respect to the substrate support member.
  9. 　前記基板に対しアニール処理を行う請求項１から請求項３のいずれかに記載の基板処理装置。 4. The substrate processing apparatus according to claim 1, wherein the substrate is annealed.
  10. 　前記基板がガラス基板であり、
    　請求項１から請求項３のいずれかに記載の基板処理装置を備えている液晶表示パネル製造装置。     The substrate is a glass substrate;
    The liquid crystal display panel manufacturing apparatus provided with the substrate processing apparatus in any one of Claims 1-3.
PCT/JP2013/072342 2012-08-29 2013-08-22 Substrate processing device and device for producing liquid crystal display panel WO2014034503A1 (en)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002130959A (en) * 2000-10-24 2002-05-09 Tabai Espec Corp Work support for loading device
JP2004108670A (en) * 2002-09-19 2004-04-08 Koyo Thermo System Kk Workpiece loading device for heat treatment apparatus
JP2004165582A (en) * 2002-09-17 2004-06-10 Nikon Corp Method for manufacturing substrate holder, substrate tray, stage equipment and substrate holder
JP2004299850A (en) * 2003-03-31 2004-10-28 Dainippon Printing Co Ltd Processing method and processing device
JP2005268270A (en) * 2004-03-16 2005-09-29 Sharp Corp Placement table for liquid crystal glass substrate, and cleaning apparatus for liquid crystal glass substrate using the same
JP2006049111A (en) * 2004-08-05 2006-02-16 Toppoly Optoelectronics Corp Electrostatic eliminator
JP2010010719A (en) * 2009-10-13 2010-01-14 Tokyo Electron Ltd Substrate treatment device
JP2012160491A (en) * 2011-01-28 2012-08-23 Sharp Corp Substrate transfer apparatus and substrate processing apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940005459Y1 (en) * 1991-05-15 1994-08-13 주식회사 에스. 케이. 씨 Roll for resin film producing
CN100381883C (en) * 2004-05-24 2008-04-16 统宝光电股份有限公司 Static neutralization apparatus and machine thereof
CN101071785A (en) * 2006-05-11 2007-11-14 中华映管股份有限公司 Substrate carrier capable of removing electrostatics
KR100938874B1 (en) * 2007-07-24 2010-01-27 주식회사 에스에프에이 Susceptor for Supporting Flat Display and Method for Manufacturing Thereof, and Chemical Vapor Deposition Apparatus Having the Same
JP4842294B2 (en) * 2008-04-30 2011-12-21 日東電工株式会社 Porous sheet, method for producing the same, and heat insulating sheet
JP5554617B2 (en) * 2010-04-12 2014-07-23 株式会社ディスコ Holding table
CN201947522U (en) * 2011-03-22 2011-08-24 京东方科技集团股份有限公司 Device for eliminating undesirable static electricity

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002130959A (en) * 2000-10-24 2002-05-09 Tabai Espec Corp Work support for loading device
JP2004165582A (en) * 2002-09-17 2004-06-10 Nikon Corp Method for manufacturing substrate holder, substrate tray, stage equipment and substrate holder
JP2004108670A (en) * 2002-09-19 2004-04-08 Koyo Thermo System Kk Workpiece loading device for heat treatment apparatus
JP2004299850A (en) * 2003-03-31 2004-10-28 Dainippon Printing Co Ltd Processing method and processing device
JP2005268270A (en) * 2004-03-16 2005-09-29 Sharp Corp Placement table for liquid crystal glass substrate, and cleaning apparatus for liquid crystal glass substrate using the same
JP2006049111A (en) * 2004-08-05 2006-02-16 Toppoly Optoelectronics Corp Electrostatic eliminator
JP2010010719A (en) * 2009-10-13 2010-01-14 Tokyo Electron Ltd Substrate treatment device
JP2012160491A (en) * 2011-01-28 2012-08-23 Sharp Corp Substrate transfer apparatus and substrate processing apparatus

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